CN116600589A - Silicon-based OLED and low-temperature bonding production process thereof - Google Patents
Silicon-based OLED and low-temperature bonding production process thereof Download PDFInfo
- Publication number
- CN116600589A CN116600589A CN202310614165.7A CN202310614165A CN116600589A CN 116600589 A CN116600589 A CN 116600589A CN 202310614165 A CN202310614165 A CN 202310614165A CN 116600589 A CN116600589 A CN 116600589A
- Authority
- CN
- China
- Prior art keywords
- oled
- silicon
- wafer
- bonding
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 239000010703 silicon Substances 0.000 title claims abstract description 86
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 86
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000000034 method Methods 0.000 claims abstract description 64
- 239000000463 material Substances 0.000 claims abstract description 36
- 235000012431 wafers Nutrition 0.000 claims description 65
- 239000002184 metal Substances 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 238000004806 packaging method and process Methods 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 15
- 239000005304 optical glass Substances 0.000 claims description 15
- 238000007689 inspection Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000005520 cutting process Methods 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 238000002161 passivation Methods 0.000 claims description 7
- 238000011049 filling Methods 0.000 claims description 6
- 239000003292 glue Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 239000011159 matrix material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 239000006059 cover glass Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
- H10K59/1275—Electrical connections of the two substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/851—Division of substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a silicon-based OLED and a low-temperature bonding production process, wherein a supporting frame (11) is attached to the outer ring of a cathode ring. By adopting the technical scheme, the damage of high temperature to the OLED material is avoided; the supporting frames distributed on the wafer are utilized to improve the parallelism between the glass and the OLED wafer after the glass is attached, the difficulty of thinning the OLED wafer is reduced, and meanwhile, the damage of pressure on the OLED material during bonding is reduced by the supporting frames; the low-cost silicon substrate is used, the OLED luminous layer and other structures are manufactured on the silicon substrate independently, and then the qualified OLED luminous layer wafer is thinned and polished and then bonded to the CMOS integrated circuit substrate, so that a complete silicon-based OLED circuit and luminous structure are realized, and the problem of the loss of the CMOS integrated circuit substrate caused by the failure of the OLED luminous layer process in the traditional silicon-based OLED process flow is effectively avoided.
Description
Technical Field
The invention belongs to the technical field of structures and production process flows of OLED display devices, and particularly relates to a silicon-based OLED. The invention also relates to a production process of the silicon-based OLED low-temperature bonding method.
Background
The cross-sectional structure of a prior art silicon-based OLED product is shown in fig. 1. The organic light emitting diode comprises optical glass 1, transparent filling glue 2, a color filter 3, a film packaging layer 4, an OLED material layer 5, anode pixels 6, metal wires 7, an insulating medium 8, a silicon substrate 9 and a cathode ring 10.
In the bonding process of the silicon-based OLED in the prior art, two layers of metals can be bonded together only by an annealing process at the temperature of more than 120 ℃, but the OLED organic material cannot bear high temperature;
the traditional silicon-based OLED process flow is to continue processing the OLED luminescent layer on the CMOS integrated circuit substrate: OLED anode, organic evaporation, film encapsulation, color filter, cover glass and other structures; the problem of losing expensive CMOS integrated circuit substrates upon subsequent anomalies in these processes has led to the reality that the production costs of conventional silicon-based OLEDs are always difficult to reduce.
As shown in fig. 2, the conventional silicon-based OLED product production process flow is as follows:
and manufacturing an OLED anode structure on the CMOS circuit substrate, evaporating OLED materials, manufacturing a thin film package, manufacturing a color filter, attaching transparent filling glue (2) and optical glass (1), cutting and grading a wafer after the completion, and finally checking after the module package.
The following keywords were used: "silicon-based OLED; wafer-to-wafer low temperature bonding; wafer-to-wafer low temperature bonding "; searching the prior related art documents, and searching the following patent technical documents:
1. chinese patent literature: a manufacturing method for separating a silicon-based OLED display matrix and a driving circuit is disclosed, wherein the patent (application) number is as follows: 202110986583.X; the technical scheme is that:
the manufacturing method for separating the silicon-based OLED display matrix from the driving circuit comprises the following steps:
(1) Directly manufacturing a display matrix and a peripheral simple circuit by using a wafer and a low-order process for producing the matrix, and manufacturing a pad on the edge of the display area;
(2) Manufacturing a driving circuit chip in a wafer factory;
(3) Bonding the driving circuit chip and the display matrix together;
the recorded technical effects are as follows:
the cost of the original wafer is far lower than that of the finished wafer in the advanced process, the area with high cost is greatly reduced, only a few tenth of the whole finished product is not limited by a wafer factory, the cost of the structure is far lower than that of the existing structure, the efficiency is greatly improved, and the screen occupation ratio is improved. The display wafer and the driving chip are manufactured separately and independently; can be manufactured by a low-order process, greatly reduces the cost and greatly shortens the time. Because of the simple structure, the yield is also high. The serial flow is changed into the parallel flow, the display wafer and the driving chip can be manufactured respectively, the yield is improved, and the cost is reduced.
2. Chinese patent literature: an OLED micro-display and an anode bonding method thereof, wherein the patent (application) number is as follows: 201710365150.6; the technical scheme is that:
an OLED micro-display and an anodic bonding method thereof, wherein the anodic bonding method of the OLED micro-display comprises the following steps:
s1, preparing a groove on an insulating substrate;
s2, after the groove is filled with copper, preparing a copper connecting column;
s3, preparing an OLED device on the insulating substrate to obtain a prefabricated OLED light-emitting unit;
s4, bonding the copper connecting posts on the prefabricated OLED light-emitting units with the front surface of the IC sheet to finish anode bonding of the OLED micro-display;
the recorded technical effects are as follows:
the prefabricated OLED light-emitting units are bonded with the IC sheet, so that the problem that the expensive IC sheet is scrapped due to defects formed in the preparation process of anode pixels and the OLED light-emitting units is avoided, the utilization rate of the IC sheet is improved, and the production cost is reduced.
The technical proposal of the prior patent document still does not completely solve the problems and defects in the prior art, because the OLED material is not resistant to high temperature, the traditional bonding process needs high-temperature annealing treatment, because oxidation and passivation phenomena are easy to exist after the metal material contacts air, the passivated metal can be bonded at a higher bonding temperature, and the silicon-based OLED needs a proper low-temperature bonding process;
disclosure of Invention
The invention provides a silicon-based OLED, which is suitable for a low-temperature bonding process of the silicon-based OLED and can avoid damage of high temperature to OLED materials.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows:
the silicon-based OLED comprises optical glass, transparent filling glue, a color filter, a film packaging layer, an OLED material layer, anode pixels, metal wires, an insulating medium layer, a silicon substrate and a cathode ring; and a supporting frame is attached to the outer ring of the cathode ring.
The supporting frame is made of one of precise metal, silicon, ceramic and plastic materials.
The thickness of the supporting frame is not more than 1mm.
In order to achieve the same aim as the technical scheme, the invention also provides a low-temperature bonding production process of the silicon-based OLED.
The production process flow comprises a front section and a rear section; the front section comprises two parts of process contents, namely a production process of a CMOS circuit substrate, a silicon substrate and related production processes; the rear section is bonded until the processing is completed.
The method comprises the following specific two technical schemes:
the first technical scheme is as follows:
the production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 12;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate;
step 3, processing the insulating medium layer and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer;
step 6, manufacturing a film packaging layer;
step 7, manufacturing a color filter;
step 8, mounting a supporting frame;
step 9, sticking optical glass;
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning a silicon substrate, and entering a step 12;
the bonding process until the processing is completed comprises the following steps:
step 12, bonding surface plasma bombardment;
step 13, bonding crystal faces in a low-temperature state;
step 14, cutting the wafer;
step 15, packaging the module; and (5) final inspection.
In the step 12, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED wafer in a near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in a near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces.
In the step 13, the metal through holes on the front surface of the CMOS wafer and the thinned and polished surface of the OLED wafer are aligned and pressed together, and the pressed two layers of metal are bonded together by standing and annealing under the low-temperature environment which can be tolerated by the OLED material at the temperature of 0-120 ℃.
The second technical scheme is as follows:
the production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 14;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate;
step 3, processing the insulating medium layer and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer;
step 6, manufacturing a film packaging layer;
step 7, manufacturing a color filter;
step 8, mounting a supporting frame;
step 9, sticking optical glass;
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning a silicon substrate;
step 12, cutting the wafer;
step 13, selecting qualified wafers; step 14 is entered;
the bonding process until the processing is completed comprises the following steps:
step 14, bonding surface plasma bombardment;
step 15, bonding a crystal face in a low-temperature state to the wafer;
step 16, cutting the wafer;
step 17, packaging the module; and (5) final inspection.
In the step 11 and the step 12, the thinned OLED wafer is cut and classified in advance, and unqualified grains are removed after inspection; and cleaning the qualified crystal grains.
In the step 14, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED die in a near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in a near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces.
In the step 14 and the step 15, the metal through holes on the front surface of the CMOS wafer and the thinned and polished surfaces of the OLED crystal grains are aligned and pressed together, and the pressed two layers of metals are bonded together by standing and annealing under the low-temperature environment which can be tolerated by the OLED material at the temperature of 0-120 ℃; after the steps are finished, dicing and grading the bonded wafer, and finishing module packaging and final inspection.
By adopting the technical scheme, the method adopts a low-temperature bonding process suitable for the silicon-based OLED, and avoids damage of high temperature to OLED materials; and the supporting frames distributed on the wafer are utilized, so that the parallelism between the glass and the OLED wafer after the glass is attached is improved, the difficulty of thinning the OLED wafer is reduced, and meanwhile, the damage of pressure to an OLED material during bonding is reduced by the supporting frames. The low-cost silicon substrate is used, the OLED luminous layer and other structures are manufactured on the silicon substrate independently, and then the qualified OLED luminous layer wafer is thinned and polished and then bonded to the CMOS integrated circuit substrate, so that a complete silicon-based OLED circuit and luminous structure are realized, and the problem of the loss of the CMOS integrated circuit substrate caused by the failure of the OLED luminous layer process in the traditional silicon-based OLED process flow is effectively avoided.
Drawings
The contents of the drawings and the marks in the drawings are briefly described as follows:
FIG. 1 is a flow chart of a conventional silicon-based OLED product production process;
FIG. 2 is a schematic diagram of a conventional silicon-based OLED structure;
FIG. 3 is a flowchart of a process for fabricating a silicon-based OLED according to a first embodiment of the present invention;
FIG. 4 is a flowchart of a second embodiment of a process for producing a silicon-based OLED;
FIG. 5 is a block diagram of a silicon-based OLED of the present invention;
FIG. 6 is a schematic diagram of an OLED wafer structure according to the present invention;
FIG. 7 is a schematic diagram of the structure of the OLED wafer after thinning according to the present invention;
FIG. 8 is a schematic diagram of a CMOS wafer structure;
FIG. 9 is a schematic view of a single support frame mounting location;
fig. 10 is a schematic diagram illustrating mounting positions of a plurality of support frames on a wafer.
Marked in the figure as:
1. optical glass, 2, transparent filling glue, 3, a color filter, 4, a film packaging layer, 5, an OLED material layer, 6, an anode pixel, 7, a metal wire, 8, an insulating medium layer, 9, a silicon substrate, 10, a cathode ring, 11, a supporting frame, 12 and a bonding interface.
Detailed Description
The following detailed description of the embodiments of the invention, given by way of example only, is presented in the accompanying drawings to aid in a more complete, accurate, and thorough understanding of the inventive concepts and aspects of the invention by those skilled in the art.
The structure of the invention shown in fig. 5 is a silicon-based OLED, which comprises an optical glass 1, a transparent filling glue 2, a color filter 3, a thin film packaging layer 4, an OLED material layer 5, an anode pixel 6, a metal wire 7, an insulating medium layer 8, a silicon substrate 9 and a cathode ring 10.
In order to solve the problems existing in the prior art and overcome the defects of the prior art and realize the aim of avoiding damage to OLED materials caused by high temperature, the invention adopts the following technical scheme:
as shown in fig. 5, in the silicon-based OLED of the present invention, a support frame 11 is attached to the outer ring of the cathode ring 10.
According to the invention, the supporting frames 11 distributed on the wafer are utilized, so that the parallelism of the optical glass 1 and the OLED wafer is improved after the optical glass 1 is attached, the difficulty of thinning the OLED wafer is reduced, and meanwhile, the damage of pressure to the OLED material during bonding is reduced due to the existence of the supporting frames.
The supporting frame 11 is made of one of precise metal, silicon, ceramic and plastic materials. The thickness of the supporting frame 11 is not more than 1mm.
In order to reduce the pressure applied to the OLED material during bonding, the supporting frame 11 attached to the outer ring of the chip cathode ring is made of one of precise metal, silicon, ceramic and plastic materials, the material is not limited, the precision is required to be met, the thickness is not more than 1mm, and the attaching position of the supporting frame is shown in fig. 9 and 10.
In order to achieve the same aim as the technical scheme, the invention also provides a low-temperature bonding production process of the silicon-based OLED.
As shown in fig. 3 and 4:
the production process flow comprises a front section and a rear section; the front section comprises two parts of process contents, namely a production process of a CMOS circuit substrate, a silicon substrate and related production processes; the rear section is bonded until the processing is completed.
The invention prepares the silicon-based OLED through a low-temperature bonding process, uses a low-cost silicon substrate, and firstly singly prepares an OLED luminescent layer on the silicon substrate: the structure of metal through holes, anodes, organic evaporation, film packaging, color filters, cover glass and the like is formed, and then wafers of the OLED luminous layers which are qualified in production are thinned and polished and then bonded to the CMOS integrated circuit substrate, so that a complete silicon-based OLED circuit and luminous structure are realized, and the problem of the loss of the CMOS integrated circuit substrate caused by the process failure of the OLED luminous layers in the traditional silicon-based OLED process flow is effectively avoided.
Specifically, the following two embodiments are adopted:
in the first embodiment, as shown in fig. 3:
the production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 12;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate 9;
step 3, processing the insulating medium layer 8 and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer 5;
step 6, manufacturing a film packaging layer 4;
step 7, manufacturing a color filter 3;
step 8, mounting a supporting frame 11;
step 9, sticking optical glass 1;
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning the silicon substrate 9, and entering step 12;
the bonding process until the processing is completed comprises the following steps:
step 12, bonding surface plasma bombardment;
step 13, bonding crystal faces in a low-temperature state;
step 14, cutting the wafer;
step 15, packaging the module; and (5) final inspection.
Manufacturing patterned insulating medium and metal through holes on a silicon substrate, and completing the production of an OLED anode structure, evaporation of OLED materials, film encapsulation, a color filter, mounting of a supporting frame and bonding of optical glass similar to the traditional silicon-based OLED production process; the structure diagram is shown in fig. 6;
after the above steps are completed, whether the OLED is qualified or not is checked, qualified OLED wafers are selected, and the substrate is thinned, polished and cleaned, and the structure of the OLED is shown in FIG. 7.
In the step 12, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED wafer in a near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in a near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces.
In the step 13, the metal through holes on the front surface of the CMOS wafer and the thinned and polished surface of the OLED wafer are aligned and pressed together, and the pressed two layers of metal are bonded together by standing and annealing under the low-temperature environment which can be tolerated by the OLED material at the temperature of 0-120 ℃.
The bonding interface 12 is shown in fig. 5.
After the steps are finished, dicing and grading the bonded wafer, and finishing module packaging and final inspection.
In the second embodiment, as shown in fig. 4:
on the basis of the first embodiment, the thinned OLED wafer is cut and classified in advance, and unqualified grains are removed after inspection; and cleaning the qualified crystal grains.
The production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 14;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate 9;
step 3, processing the insulating medium layer 8 and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer 5;
step 6, manufacturing a film packaging layer 4;
step 7, manufacturing a color filter 3;
step 8, mounting a supporting frame 11;
step 9, sticking optical glass 1;
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning the silicon substrate 9;
step 12, cutting the wafer;
step 13, selecting qualified wafers; step 14 is entered;
the bonding process until the processing is completed comprises the following steps:
step 14, bonding surface plasma bombardment;
step 15, bonding a crystal face in a low-temperature state to the wafer;
step 16, cutting the wafer;
step 17, packaging the module; and (5) final inspection.
In the step 11 and the step 12, the thinned OLED wafer is cut and classified in advance, and unqualified grains are removed after inspection; and cleaning the qualified crystal grains.
In the step 14, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED crystal grain in the near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in the near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces,
in the step 14, aligning and pressing the metal through holes on the front surface of the CMOS wafer and the thinned and polished surface of the OLED crystal grains together, and standing and annealing the metal through holes and the thinned and polished surface of the OLED crystal grains in a low-temperature environment which can be tolerated by the OLED material at 0-120 ℃ to bond the two layers of metal;
after the steps are finished, dicing and grading the bonded wafer, and finishing module packaging and final inspection.
The CMOS substrate structure is shown in fig. 8.
The innovation points of the invention are as follows:
the main working procedures of the silicon-based OLED are processed on the monocrystalline silicon substrate by using a method of bonding the CMOS substrate and the OLED, so that the processing on the CMOS substrate is avoided; the screened qualified OLED wafer or chip is bonded to the CMOS substrate, so that the need of directly using an expensive CMOS substrate to process the OLED can be avoided, the rejection rate of the CMOS substrate is reduced, the process flow is simple, the yield is high, and the cost is low.
The silicon-based OLED micro-display device is manufactured by using a method of bonding wafers with low Wen Jingyuan or bonding wafers with low temperature, and the problem of decomposition failure of OLED materials can be avoided through a low-temperature bonding process. The scheme and the process flow of the low-temperature bonding are emphasized to protect the separate preparation of the CMOS substrate and the OLED layer; and reducing the pressure applied to the OLED material during bonding by utilizing the supporting frame structure, so as to avoid damage to the OLED material and the film packaging material. Compared with the traditional silicon-based OLED manufacturing method, the manufacturing cost is reduced, and the economic benefit is improved.
While the invention has been described above with reference to the accompanying drawings, it will be apparent that the invention is not limited to the above embodiments, but is capable of being modified or applied directly to other applications without modification, as long as various insubstantial modifications of the method concept and technical solution of the invention are adopted, all within the scope of the invention.
Claims (10)
1. A silicon-based OLED comprises optical glass (1), transparent filling glue (2), a color filter (3), a thin film packaging layer (4), an OLED material layer (5), anode pixels (6), metal wires (7), an insulating medium layer (8), a silicon substrate (9) and a cathode ring (10); the method is characterized in that: a supporting frame (11) is attached to the outer ring of the cathode ring (10).
2. A silicon-based OLED as claimed in claim 1 wherein: the supporting frame (11) is made of one of precise metal, silicon, ceramic and plastic materials.
3. A silicon-based OLED as claimed in claim 1 wherein: the thickness of the supporting frame (11) is not more than 1mm.
4. A low temperature bonding process for producing a silicon-based OLED as claimed in claim 1 or 2 or 3, wherein: the production process flow comprises a front section and a rear section; the front section comprises two parts of process contents, namely a production process of a CMOS circuit substrate, a silicon substrate and related production processes; the rear section is bonded until the processing is completed;
the production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 12;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate (9);
step 3, processing the insulating medium layer (8) and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer (5);
step 6, manufacturing a film packaging layer (4);
step 7, manufacturing a color filter (3);
step 8, mounting a supporting frame (11);
step 9, sticking optical glass (1);
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning the silicon substrate (9), and entering a step 12;
the bonding process until the processing is completed comprises the following steps:
step 12, bonding surface plasma bombardment;
step 13, bonding crystal faces in a low-temperature state;
step 14, cutting the wafer;
step 15, packaging the module; and (5) final inspection.
5. The low temperature bonding process for producing a silicon-based OLED as claimed in claim 4, wherein: in the step 12, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED wafer in a near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in a near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces.
6. The low temperature bonding process for producing a silicon-based OLED as claimed in claim 4, wherein: in the step 13, the metal through holes on the front surface of the CMOS wafer and the thinned and polished surface of the OLED wafer are aligned and pressed together, and the pressed two layers of metal are bonded together by standing and annealing under the low-temperature environment which can be tolerated by the OLED material at the temperature of 0-120 ℃.
7. A low temperature bonding process for producing a silicon-based OLED as claimed in claim 1 or 2 or 3, wherein: the front section and the rear section of the production process flow; the front section comprises two parts of process contents, namely a production process of a CMOS circuit substrate, a silicon substrate and related production processes; the rear section is bonded until the processing is completed;
the production process of the CMOS circuit substrate comprises the following steps:
step 1, manufacturing a CMOS circuit substrate, and then entering step 14;
the silicon substrate and the related production process comprise the following steps:
step 2, manufacturing a silicon substrate (9);
step 3, processing the insulating medium layer (8) and the metal through hole;
step 4, processing an OLED anode;
step 5, evaporating an OLED material layer (5);
step 6, manufacturing a film packaging layer (4);
step 7, manufacturing a color filter (3);
step 8, mounting a supporting frame (11);
step 9, sticking optical glass (1);
step 10, checking whether the test is qualified or not; if the result is qualified, carrying out the next step; if the test result is not qualified, scrapping;
step 11, thinning and cleaning the silicon substrate (9);
step 12, cutting the wafer;
step 13, selecting qualified wafers; step 14 is entered;
the bonding process until the processing is completed comprises the following steps:
step 14, bonding surface plasma bombardment;
step 15, bonding a crystal face in a low-temperature state to the wafer;
step 16, cutting the wafer;
step 17, packaging the module; and (5) final inspection.
8. The low temperature bonding process for producing a silicon-based OLED as claimed in claim 7, wherein: in the step 11 and the step 12, the thinned OLED wafer is cut and classified in advance, and unqualified grains are removed after inspection; and cleaning the qualified crystal grains.
9. The low temperature bonding process for producing a silicon-based OLED as claimed in claim 7, wherein: in the step 14, the surface activated vacuum bonding method or the plasma activated bonding method is used, the plasma is used to bombard the polished surface of the OLED die in a near vacuum environment, and the plasma is used to bombard the exposed metal through holes on the surface of the CMOS wafer in a near vacuum environment at the same time, so as to remove the oxide layer or the passivation layer on the metal surfaces of the two bonding surfaces.
10. The low temperature bonding process for producing a silicon-based OLED as claimed in claim 7, wherein: in the step 14 and the step 15, the metal through holes on the front surface of the CMOS wafer and the thinned and polished surfaces of the OLED crystal grains are aligned and pressed together, and the pressed two layers of metals are bonded together by standing and annealing under the low-temperature environment which can be tolerated by the OLED material at the temperature of 0-120 ℃; after the steps are finished, dicing and grading the bonded wafer, and finishing module packaging and final inspection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310614165.7A CN116600589A (en) | 2023-05-29 | 2023-05-29 | Silicon-based OLED and low-temperature bonding production process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310614165.7A CN116600589A (en) | 2023-05-29 | 2023-05-29 | Silicon-based OLED and low-temperature bonding production process thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116600589A true CN116600589A (en) | 2023-08-15 |
Family
ID=87593545
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310614165.7A Pending CN116600589A (en) | 2023-05-29 | 2023-05-29 | Silicon-based OLED and low-temperature bonding production process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116600589A (en) |
-
2023
- 2023-05-29 CN CN202310614165.7A patent/CN116600589A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI404196B (en) | Manufacturing method of solid-state image sensor module | |
| KR101043836B1 (en) | Fabrication method of semiconductor integrated circuit device | |
| CN103832970B (en) | Low-temperature wafer bonding method | |
| TWI267927B (en) | Method for wafer level package | |
| JPH0964321A (en) | Manufacture of soi substrate | |
| CN101246814A (en) | Stripping method and method for producing semiconductor device | |
| JP5533695B2 (en) | Semiconductor chip manufacturing method and semiconductor chip mounting method | |
| CN115207186B (en) | Mini-LED chip and preparation method thereof | |
| WO2021088125A1 (en) | Ultra-high-resolution micro-display screen and manufacturing process therefor | |
| CN105234563B (en) | A kind of back laser cutting method of glass passivated silicon wafer | |
| CN107565064A (en) | The preparation method of flexible display and the substrate for making flexible display | |
| CN116600589A (en) | Silicon-based OLED and low-temperature bonding production process thereof | |
| CN111446159B (en) | Production method for cutting front surface and thinning back surface | |
| US20040188792A1 (en) | Colour image sensor on transparent substrate and method for making same | |
| WO2013150427A1 (en) | Led thin-film device partial singulation prior to substrate thinning or removal | |
| CN115332285A (en) | Manufacturing method of multicolor Micro-LED display device | |
| CN116130473A (en) | Transfer method of Micro-LED element | |
| TWI685987B (en) | Micro-die module transfer method | |
| CN113782553A (en) | Mass transfer Micro LED module, display screen and manufacturing method | |
| CN111446161B (en) | Wafer cutting method | |
| KR102527289B1 (en) | Substrate bonding method | |
| CN113763877A (en) | Manufacturing method for separating silicon-based OLED display matrix from driving circuit | |
| JPH07509105A (en) | VLSI-quality crystal semiconductor substrate supply method | |
| JP4615936B2 (en) | Method for manufacturing laminated optical element | |
| TWI234215B (en) | Packaging method of image sensor and its structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |