CN116596079A - Quantum computing device for weakening electromagnetic resonance - Google Patents
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- CN116596079A CN116596079A CN202310882953.4A CN202310882953A CN116596079A CN 116596079 A CN116596079 A CN 116596079A CN 202310882953 A CN202310882953 A CN 202310882953A CN 116596079 A CN116596079 A CN 116596079A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
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- 238000002360 preparation method Methods 0.000 claims abstract description 8
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- 238000002955 isolation Methods 0.000 claims description 23
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- 230000005540 biological transmission Effects 0.000 description 3
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- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
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- 230000029052 metamorphosis Effects 0.000 description 1
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- G—PHYSICS
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- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The application relates to the technical field of quantum computing, in particular to a quantum computing device for weakening electromagnetic resonance. An embodiment of the present application provides a quantum computing device for attenuating electromagnetic resonance, including: the quantum chip and the interference layer are positioned on one side of the quantum chip; the interference layer includes frequency conversion layer and reflection stratum in proper order along thickness direction, the frequency conversion layer is close to the quantum chip, the preparation material of frequency conversion layer includes shape memory metal, the reflection stratum is used for reflecting the electromagnetic wave of incident to its surface, the frequency conversion layer is provided with electromagnetic inductor, and when electromagnetic inductor detects electromagnetic wave intensity and surpasses the default, the frequency of the induced electromagnetic wave that changes its formation is warp in the frequency of frequency conversion layer. The embodiment of the application provides a quantum computing device for weakening electromagnetic resonance, which can provide a quantum chip for weakening or eliminating the electromagnetic resonance.
Description
Technical Field
The application relates to the technical field of quantum computing, in particular to a quantum computing device for weakening electromagnetic resonance.
Background
Quantum chips are necessary elements to implement quantum computing.
When quantum computation is performed, microwave pulse is required to be applied to the quantum chip to operate the bit quantum state, and then the state information of the quantum bit is obtained by receiving the returned pulse signal, so that the quantum computation is completed. However, the quantum circuit in the chip and the packaging shell form electromagnetic resonance, so that the electromagnetic resonance has high oscillation intensity, and then the quantum bit in the quantum circuit is interfered, and finally the quantum computation is influenced.
Currently, there is a lack of a quantum computing device capable of reducing or eliminating electromagnetic resonance.
Disclosure of Invention
The embodiment of the application provides a quantum computing device for weakening electromagnetic resonance, which can provide a quantum chip for weakening or eliminating the electromagnetic resonance.
An embodiment of the present application provides a quantum computing device for attenuating electromagnetic resonance, including: the quantum chip and the interference layer are positioned on one side of the quantum chip;
the interference layer includes frequency conversion layer and reflection stratum in proper order along thickness direction, the frequency conversion layer is close to the quantum chip, the preparation material of frequency conversion layer includes shape memory metal, the reflection stratum is used for reflecting the electromagnetic wave of incident to its surface, the frequency conversion layer is provided with electromagnetic inductor, and when electromagnetic inductor detects electromagnetic wave intensity and surpasses the default, the frequency of the induced electromagnetic wave that changes its formation is warp in the frequency of frequency conversion layer.
In one possible design, the frequency conversion layer includes a base layer and a plurality of closed conductors disposed on the base layer, the closed conductors are made of shape memory metal, and the temperature of the closed conductors is controlled to deform the closed conductors, so that the effect of changing the frequency of induced electromagnetic waves is achieved.
In one possible design, the frequency conversion layer comprises a plurality of base units, each of which comprises at least one annular conductor.
In one possible design, the basic unit includes three annular conductors, the geometric centers of the three annular conductors are the same, the three annular conductors are a first ring body, a second ring body and a third ring body from inside to outside in sequence, the ring widths of the first ring body, the second ring body and the third ring body are 2-6 mm, and the intervals among the first ring body, the second ring body and the third ring body are 2-6 mm.
In one possible design, the first ring body, the second ring body, and the third ring body are circular rings at a first temperature and rectangular rings at a second temperature, the first temperature and the second temperature being different.
In one possible design, the first ring body, the second ring body and the third ring body are provided with resistance wires inside, and the resistance wires are connected with a variable voltage power supply to control the temperature of the resistance wires.
In one possible design, the quantum chip is arranged in a refrigerating bin of the dilution refrigerator, an isolation bin is arranged in the refrigerating bin, a preparation material of the isolation bin is a wave-transparent heat insulation material, and the interference layer is arranged in the isolation bin.
In one possible design, the isolation cartridge is a vacuum environment.
In one possible design, the inner and outer surfaces of the isolation cartridge are provided with transmissive films.
In one possible design, the base layer is made of a material comprising polyimide.
Compared with the prior art, the application has at least the following beneficial effects:
in the embodiment of the application, when electromagnetic resonance is generated by the quantum chip, oscillating electromagnetic waves generated by the electromagnetic resonance are transmitted to the interference layer, the oscillating electromagnetic waves firstly enter the frequency conversion layer, after the frequency of the electromagnetic waves is changed by the frequency conversion layer, part of the frequency conversion electromagnetic waves are reflected to the quantum chip, and the other part of the frequency conversion electromagnetic waves are reflected by the reflection layer after passing through the frequency conversion layer, pass through the frequency conversion layer, and when the frequency conversion layer passes through, the frequency of the electromagnetic waves is changed again, the electromagnetic waves with the frequency changed again finally enter the quantum chip, and finally, two electromagnetic waves with different frequencies from the oscillating electromagnetic waves generated by the electromagnetic resonance enter the shell surface of the quantum chip, so that the resonance state generated inside the quantum chip is interfered and destroyed, and the intensity of the electromagnetic waves which cannot form the resonance state is lower, so that the quantum bit state inside the quantum chip cannot be interfered.
Because the frequency of electromagnetic resonance generated by the quantum chip is not consistent, the frequency conversion effect of the frequency conversion layer is not stable, and the final interference effect cannot be ensured. Therefore, the interference layer is prepared by utilizing the shape memory metal, and when the frequency conversion layer cannot obtain a good frequency conversion effect aiming at the current electromagnetic resonance, the electromagnetic wave intensity received by the electromagnetic inductor is high. When the intensity of electromagnetic waves of electromagnetic resonance exceeds the preset value for more than 1s, the shape memory metal in the deformation layer is controlled to deform, so that the structure of the frequency conversion layer is changed, and the frequency conversion layer has an excellent frequency conversion effect on the current frequency of the resonant electromagnetic waves.
It should be noted that the fixed structure can only have a better frequency conversion effect for a certain wave band. Therefore, the variable frequency layer is prepared by using the shape memory metal, so that the variable frequency layer has the effect of variable structure. Because the electromagnetic wave frequency of the resonance state generated by the quantum chip is not fixed, the variable frequency conversion layer with variable frequency is arranged by utilizing the shape memory metal, and the deformation degree of the shape memory alloy is controlled to adjust the effective variable frequency band of the variable frequency layer.
The quantum computing device of this embodiment further includes a wire, one end of which is connected to the quantum chip, and the other end of which is connected to an external microwave pulse device, a signal receiving device, and other devices.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a quantum computing device for attenuating electromagnetic resonance according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a basic unit according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of another basic unit according to an embodiment of the present application.
In the figure:
100-refrigerating bin;
200-isolating bins;
1-a quantum chip;
2-an interference layer;
21-a frequency conversion layer;
211-basic unit;
211 a-a first ring body;
211 b-a second ring body;
211 c-a third ring body;
22-reflective layer.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present application more apparent, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments, and all other embodiments obtained by those skilled in the art without making any inventive effort based on the embodiments of the present application are within the scope of protection of the present application.
In the description of embodiments of the present application, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance unless explicitly specified or limited otherwise; the term "plurality" means two or more, unless specified or indicated otherwise; the terms "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the description of the present specification, it should be understood that the terms "upper", "lower", and the like used in the embodiments of the present application are described in terms of the angles shown in the drawings, and should not be construed as limiting the embodiments of the present application. In the context of this document, it will also be understood that when an element is referred to as being "on" or "under" another element, it can be directly on the other element or be indirectly on the other element through intervening elements.
As shown in fig. 1 to 3, an embodiment of the present application provides a quantum computing device for attenuating electromagnetic resonance, including: the quantum chip 1 and the interference layer 2, the interference layer 2 locates at one side of the quantum chip 1;
the interference layer 2 comprises a frequency conversion layer 21 and a reflection layer 22 in sequence along the thickness direction, the frequency conversion layer 21 is close to the quantum chip 1, the preparation material of the frequency conversion layer 21 comprises shape memory metal, the reflection layer 22 is used for reflecting electromagnetic waves incident on the surface of the reflection layer, the frequency conversion layer 21 is provided with an electromagnetic inductor, and when the intensity of the electromagnetic waves detected by the electromagnetic inductor exceeds a preset value, the frequency conversion layer 21 deforms to change the frequency of induced electromagnetic waves formed by the electromagnetic inductor.
In the embodiment of the application, when electromagnetic resonance is generated by the quantum chip 1, when an oscillating electromagnetic wave generated by the electromagnetic resonance propagates to the interference layer 2, the oscillating electromagnetic wave firstly enters the frequency conversion layer 21, after the frequency of the electromagnetic wave is changed by the frequency conversion layer 21, a part of the frequency conversion electromagnetic wave is reflected to the quantum chip 1, and the other part of the frequency conversion electromagnetic wave passes through the frequency conversion layer 21 and then is reflected by the reflection layer 22, passes through the frequency conversion layer 21, and when the frequency passes through the frequency conversion layer 21, the electromagnetic wave with the frequency changed again changes again and finally enters the quantum chip 1, and finally, two electromagnetic waves with different frequencies from the oscillating electromagnetic wave generated by the electromagnetic resonance enter the shell surface of the quantum chip 1, so that the resonance state generated inside the quantum chip 1 is interfered and destroyed, and the intensity of the electromagnetic wave incapable of forming the resonance state is lower, so that the quantum bit state inside the quantum chip 1 cannot be interfered.
Since the frequency of electromagnetic resonance generated by the quantum chip 1 is not uniform, the frequency conversion effect of the frequency conversion layer 21 is not stable, and the final interference effect cannot be ensured. Therefore, the interference layer 2 is made of shape memory metal, and when the frequency conversion layer 21 cannot obtain a good frequency conversion effect for the current electromagnetic resonance, the electromagnetic wave intensity received by the electromagnetic sensor is high. The preset value is set in the electromagnetic inductor, when the intensity of electromagnetic waves formed by electromagnetic resonance exceeds the preset value for more than 1s, the shape memory metal in the deformation layer is controlled to deform, and the structure of the frequency conversion layer 21 is further changed, so that the frequency conversion layer 21 has excellent frequency conversion effect on the current frequency of the resonant electromagnetic waves.
It should be noted that the fixed structure can only have a better frequency conversion effect for a certain wave band. Therefore, the present application uses the shape memory metal to prepare the variable frequency layer 21 so as to have the effect of being structurally variable. Since the frequency of electromagnetic wave generated by the quantum chip 1 in the resonance state is not fixed, the variable frequency layer 21 with variable frequency is provided by the shape memory metal, and the effective variable frequency band of the variable frequency layer 21 is adjusted by controlling the deformation degree of the shape memory alloy.
The quantum computing device of this embodiment further includes a wire, one end of which is connected to the quantum chip 1, and the other end of which is connected to an external microwave pulse device, signal receiving device, and other devices.
In some embodiments of the present application, the variable frequency layer 21 includes a base layer and a plurality of closed conductors disposed on the base layer, the closed conductors being made of a shape memory metal, and the effect of changing the frequency of induced electromagnetic waves is achieved by controlling the temperature of the closed conductors to deform them.
In this embodiment, the closed conductor can generate an induced current under the influence of the oscillating electromagnetic wave, and the induced current forms a new variable-frequency electromagnetic wave, so as to finally achieve the effect of frequency conversion. When the temperature of the closed conductor is changed, the shape of the closed conductor is changed, and the intensity of the induced current is also changed. The change of the shape and the current intensity changes the effective action wave band of the variable frequency layer 21, and finally the variable frequency layer 21 can adapt to oscillating electromagnetic waves with different frequencies.
The temperature of the shape memory metal can be controlled to be different to control the deformation degree.
In order to prevent the deformation of the shape memory metal by the base layer, the shape before deformation and the shape after deformation are made to have unchanged positions when the shape memory alloy is processed in a deformed state, for example, four points on the ring are taken as unchanged points, and the four points after deformation are the midpoints of four sides of a rectangle. When the shape memory metal is arranged on the substrate layer, only the invariant points are fixed on the substrate, so that the substrate layer can be prevented from interfering with deformation.
In some embodiments of the present application, the variable frequency layer 21 includes a plurality of base units 211, each base unit 211 including at least one conductor in the shape of a loop.
In this embodiment, a plurality of ring conductors can produce the induction electromagnetic field array, and the frequency conversion effect is better.
In some embodiments of the present application, the basic unit 211 includes three annular conductors, the geometric centers of the three annular conductors are the same, the first ring body 211a, the second ring body 211b and the third ring body 211c are sequentially arranged from inside to outside, the ring widths of the first ring body 211a, the second ring body 211b and the third ring body 211c are all 2-6 mm, and the intervals among the first ring body 211a, the second ring body 211b and the third ring body 211c are all 2-6 mm.
It has been proved through a large number of experiments that the parameters of the basic unit 211 are within the above-described ranges, and can have excellent interference effects with respect to all electromagnetic resonance frequencies that may be generated by the quantum chip 1.
In some embodiments of the present application, the first ring body 211a, the second ring body 211b, and the third ring body 211c are all circular rings at a first temperature and are all rectangular rings at a second temperature, the first temperature and the second temperature being different.
In this embodiment, the first temperature may be a normal temperature, and the second temperature is an metamorphosis temperature of the shape memory metal. During the process of heating the first ring body 211a, the second ring body 211b and the third ring body 211c from the first temperature to the second temperature, the first ring body 211a, the second ring body 211b and the third ring body 211c are gradually changed from round to rectangular.
In some embodiments of the present application, resistance wires are disposed inside the first ring body 211a, the second ring body 211b and the third ring body 211c, and the resistance wires are connected to a variable voltage power supply to control the temperature of the resistance wires.
In this embodiment, resistance wires are disposed inside the first ring body 211a, the second ring body 211b and the third ring body 211c, the resistance wires are connected with a variable voltage power supply, and the variable voltage is capable of controlling the temperature of the resistance wires, thereby controlling the deformation degree of the first ring body 211a, the second ring body 211b and the third ring body 211c, and finally controlling the effective variable frequency band of the variable frequency layer 21.
In some embodiments of the present application, the quantum chip 1 is disposed in a refrigeration bin 100 of the dilution refrigerator, an isolation bin 200 is disposed in the refrigeration bin 100, a preparation material of the isolation bin 200 is a wave-transparent heat insulation material, and the interference layer 2 is disposed in the isolation bin 200.
In this embodiment, the quantum chip 1 needs to operate in a low temperature environment provided by a dilution refrigerator. The quantum chip 1 is arranged in the refrigerating bin 100 of the dilution refrigerator, so that the low-temperature operation environment of the quantum chip 1 is satisfied. However, the deformation of the first ring body 211a, the second ring body 211b, and the third ring body 211c in the variable frequency layer 21 requires temperature driving, and thus, the isolation bin 200 is prepared using a wave-transparent heat insulating material in the refrigeration bin 100. The isolation bin 200 can insulate heat while not impeding the ingress and egress of electromagnetic waves.
In some embodiments of the present application, the isolation cartridge 200 is a vacuum environment.
In this embodiment, in order to further perform temperature isolation on the interference layer 2 in the isolation bin 200, vacuum is drawn in the isolation bin 200, and a power source connected to a resistance wire may also be disposed in the isolation bin 200, and the interference layer 2 is suspended in the isolation bin 200 by a support structure, so that occurrence of heat transfer can be prevented.
It should be noted that the support structure is a tubular body with a hollow interior and is provided by a heat insulating material.
In this embodiment, the isolation bin 200 may be made of insulating glass or transparent wood.
In some embodiments of the present application, the inner and outer surfaces of the isolation cartridge 200 are provided with transmissive films.
In this embodiment, the transmission film can increase the transmittance of electromagnetic waves, and the effect of the interference layer 2 is improved.
The transmission frequency of the transmission film is selected according to the frequency bands of the resonance electromagnetic wave and the variable frequency electromagnetic wave.
In some embodiments of the application, the base layer is made of a material comprising polyimide.
In this embodiment, the polyimide film has high insulation performance, and the use temperature interval is large, so that the current of the annular conductor is not affected.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting; although the application has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A quantum computing device for attenuating electromagnetic resonance, comprising: a quantum chip (1) and an interference layer (2), wherein the interference layer (2) is positioned on one side of the quantum chip (1);
the interference layer (2) sequentially comprises a frequency conversion layer (21) and a reflecting layer (22) along the thickness direction, the frequency conversion layer (21) is close to the quantum chip (1), the preparation material of the frequency conversion layer (21) comprises shape memory metal, the reflecting layer (22) is used for reflecting electromagnetic waves incident to the surface of the frequency conversion layer (21), the frequency conversion layer (21) is provided with an electromagnetic inductor, and when the intensity of the electromagnetic waves detected by the electromagnetic inductor exceeds a preset value, the frequency conversion layer (21) deforms to change the frequency of induction electromagnetic waves formed by the frequency conversion layer.
2. Quantum computing device according to claim 1, characterized in that the frequency conversion layer (21) comprises a substrate layer and a plurality of closed conductors arranged on the substrate layer, the closed conductors being made of shape memory metal, the effect of changing the frequency of the induced electromagnetic wave being achieved by controlling the temperature of the closed conductors to deform them.
3. The quantum computing device according to claim 2, characterized in that the frequency conversion layer (21) comprises a plurality of elementary units (211), each elementary unit (211) comprising at least one conductor in the shape of a loop.
4. A quantum computing device according to claim 3, wherein the basic unit (211) comprises three annular conductors, the geometric centers of the three annular conductors are the same, a first ring body (211 a), a second ring body (211 b) and a third ring body (211 c) are arranged in sequence from inside to outside, the ring widths of the first ring body (211 a), the second ring body (211 b) and the third ring body (211 c) are all 2-6 mm, and the intervals between the first ring body (211 a), the second ring body (211 b) and the third ring body (211 c) are all 2-6 mm.
5. The quantum computing device of claim 4, wherein the first ring body (211 a), the second ring body (211 b), and the third ring body (211 c) are each circular rings at a first temperature and are each rectangular rings at a second temperature, the first temperature and the second temperature being different.
6. The quantum computing device according to claim 5, wherein the first ring body (211 a), the second ring body (211 b) and the third ring body (211 c) are each internally provided with a resistance wire, and the resistance wire is connected to a variable voltage power supply to control the temperature of the resistance wire.
7. The quantum computing device according to claim 6, further comprising a dilution refrigerator, wherein the quantum chip (1) is arranged in a refrigerating bin (100) of the dilution refrigerator, an isolation bin (200) is arranged in the refrigerating bin (100), a preparation material of the isolation bin (200) is a wave-transparent heat insulation material, and the interference layer (2) is arranged in the isolation bin (200).
8. The quantum computing device of claim 7, wherein the isolation cartridge (200) is a vacuum environment.
9. The quantum computing device according to claim 7, wherein the inner and outer surfaces of the isolation cartridge (200) are provided with transmissive films.
10. The quantum computing device of claim 2, wherein the preparation material of the base layer comprises polyimide.
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