CN116595931A - Flicker noise model based on transverse active area effect and extraction method thereof - Google Patents
Flicker noise model based on transverse active area effect and extraction method thereof Download PDFInfo
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Abstract
The invention provides a flicker noise model based on a transverse active area effect, which comprises a first flicker noise model, wherein parameters of the first flicker noise model comprise at least one of width, length frequency and temperature of a device structure; a function of the lateral active region environment established based on the distance between the device structure channel and the left and right lateral active region edges; and a second flicker noise model established according to the function of the lateral active region environment and the first flicker noise model. The invention improves the fitting precision of the flicker noise model; more reasonable layout can be designed; the function related to the changing size of the transverse active area is introduced, so that the modeling can be more accurate, and the characteristics in an actual circuit of the device can be better reflected; the method is suitable for noise models of various device types, such as MOS, various resistors and the like.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a flicker noise model based on a transverse active region effect and an extraction method thereof.
Background
With the current great use of analog and radio frequency circuits in very large scale integrated circuits, the noise characteristics of various semiconductor devices and modeling simulation thereof, which affect the analog and radio frequency performance of the circuits, are becoming more and more important, and the noise characteristics of the minimum unit devices of the integrated circuits can be accurately and comprehensively characterized, which have become targets for the efforts of professionals in the industry. In very large scale integrated circuits, which currently use analog and radio frequency circuits in large numbers, various noises are generated from semiconductor devices, whether active devices like MOSFETs, BJTs, or passive devices like resistors R, etc. By the most basic definition, noise is understood as a disturbance that interferes with the normal signal design, which is the sum of a series of random signals, covering different randomly generated frequency factors that combine amplitude and phase, although the continuous mean can be quantitatively analyzed by measurement, the actual value of any transient cannot be predicted. For passive devices, the main categories of noise are Thermal noise (Thermal noise) and Flicker noise (1/f Flicker noise). Flicker noise, also known as 1/f noise, has a power spectral density that is substantially inversely proportional to frequency. Flicker noise is low frequency noise that primarily affects the low frequency performance of the device.
In advanced integrated circuits, the noise characteristics of the device, particularly flicker noise (1/f) and its modeling, are receiving increasing attention, especially in high performance analog circuits. In the prior art, a great amount of stress enhancement technology is introduced for improving the mobility of the carrier of the device, and the environment around the device has an increasing influence on the electrical characteristics of the device, and further has a great influence on the noise of the device. The different lateral active region environments have different effects on the compressive stress generation of the device channel, which is not considered in the current device noise model.
In order to solve the above problems, a novel flicker noise model based on the lateral active region effect and an extraction method thereof are needed.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a flicker noise model based on a lateral active region effect and an extraction method thereof, which are used for solving the problem that in the prior art, a great amount of stress enhancement techniques are introduced for improving the mobility of the carriers of the device, and these techniques all cause that the environment around the device has an increasing influence on the electrical characteristics of the device itself, and thus have a great influence on the noise of the device. The different lateral active region environments have different effects on the compressive stress generation of the device channel, which is also an unaccounted for problem in current device noise models.
To achieve the above and other related objects, the present invention provides a flicker noise model based on lateral active region effect, comprising:
a first flicker noise model, parameters of the first flicker noise model including at least one of width, length frequency, temperature of the device structure;
a function of the lateral active region environment established as a function of the distance between the device structure channel and the left and right lateral active region edges;
and a second flicker noise model established according to the function of the lateral active region environment and the first flicker noise model.
Preferably, the device structure includes an active device and a passive device.
Preferably, the first flicker noise model is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature of the device structure, respectively.
Preferably, the function of the lateral active region environment is
，
And sa and sb are distances between the left active region and the right active region and the device structure channel, and gamma, alpha, beta, A, a, B, B, C, C, D and D are coefficients respectively.
Preferably, the second flicker noise model sid=f (w, l, f, T) ×f (sa, sb).
The invention also provides a method for extracting the flicker noise model based on the transverse active area effect, which comprises the following steps:
step one, designing device structures of different lateral active area environments, and then acquiring measurement data of the device structures;
establishing a first flicker noise model according to the measurement data, wherein parameters of the first flicker noise model comprise at least one of width, length frequency and temperature of the device structure;
step three, establishing a function related to the environment of the lateral active region according to the distance between the device structure channel and the edges of the left and right lateral active regions;
and step four, establishing a second flicker noise model according to the function of the transverse active area environment and the first flicker noise model.
Preferably, the device structure in the first step includes an active device and a passive device.
Preferably, the method for designing device structures with different lateral active region environments in the first step, and then acquiring measurement data of the device structures includes: designing device layouts of different lateral active area environments, manufacturing the device structure on a substrate according to the device layouts, and measuring the measurement data of the device structure.
Preferably, the first flicker noise model in the second step is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature of the device structure, respectively.
Preferably, the method for establishing the first flicker noise model according to the measurement data in the second step includes: establishing the first flicker noise model, then performing curve fitting according to the measurement data, and judging whether the precision of the curve fitting accords with a set value or not: if not, adjusting the parameters until the curve fitting accords with a set value; if yes, proceeding to the following steps.
Preferably, the function of the lateral active region environment in step three is
，
And sa and sb are distances between the left active region and the right active region and the device structure channel, and gamma, alpha, beta, A, a, B, B, C, C, D and D are coefficients respectively.
Preferably, the method for establishing a second flicker noise model according to the function of the lateral active region environment and the first flicker noise model in the third step includes: establishing the second flicker noise model, performing curve fitting on the environment of the transverse active area, and judging whether the precision of the curve fitting accords with a preset value or not: if yes, verifying the second flicker noise model; if not, modifying the function of the transverse active area environment until the precision of curve fitting accords with a preset value.
Preferably, the second flicker noise model sid=f (w, l, f, T) x f (sa, sb) in step four.
As described above, the flicker noise model based on the lateral active region effect and the extraction method thereof of the present invention have the following beneficial effects:
the invention improves the fitting precision of the flicker noise model; more reasonable layout can be designed; the function related to the changing size of the transverse active area is introduced, so that the modeling can be more accurate, and the characteristics in an actual circuit of the device can be better reflected; the method is suitable for noise models of various device types, such as MOS, various resistors and the like.
Drawings
FIG. 1 is a schematic diagram showing a flicker noise model extraction method based on the lateral active region effect according to the present invention;
FIG. 2 is a schematic diagram of a prior art model noise fit;
fig. 3 shows a model noise fit for the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
The invention provides a flicker noise model based on a transverse active area effect, which comprises the following steps:
a first flicker noise model, parameters of the first flicker noise model including at least one of width, length frequency, temperature of the device structure; it should be noted that the parameters of the first flicker noise model may also include more types according to actual requirements.
In an alternative embodiment, the device structure includes an active device and a passive device. Active component: the circuit device can execute data operation and processing. Including a wide variety of wafers, such as active crystals in semiconductor devices, integrated circuits, imaging transistors, and displays, are among the active devices. Active devices are also known as active devices. Basic definition of an active device an electronic component is called an active device if, when the component is in operation, a power source is present within the component. An active device is an electronic component that has a gain or depends on the direction of current flow. In practice, electronic components other than resistors, capacitors, and inductors (these components are referred to as "passive devices"). Examples of active devices are transistors, silicon controlled rectifiers, vacuum tubes, etc. Passive device (Passive Components): the active device is a circuit device that does not affect the basic characteristics of the signal, but only allows the signal to pass through without modification. The most common are resistors, capacitors, inductors, ceramic shakes, crystal shakes, transformers, etc.
In an alternative embodiment, the first flicker noise model is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature, respectively, of the device structure. It should be noted that the parameters of the first flicker noise model may also include more types according to actual requirements.
A function of the lateral active region environment established based on the distance between the device structure channel and the left and right lateral active region edges;
in an alternative embodiment, the function of the lateral active region environment is
，
Where sa and sb are the distances between the left and right active regions and the device structure channel, and γ, α, β, a, B, C, D are coefficients, respectively.
And a second flicker noise model established according to the function of the environment of the transverse active region and the first flicker noise model, namely on the basis of the original device flicker noise (1/f) model, taking the influence of the change of the transverse active region on the device noise model into consideration. Therefore, the function related to the size of the transverse active region is introduced into the original 1/f model, the characteristics of the device structure in different transverse active region environments can be more accurately represented, and a device noise model which is more accurate and wider in practicability is established. .
In an alternative embodiment, the second flicker noise model sid=f (w, l, f, T) ×f (sa, sb), is multiplied by.
In an alternative embodiment, please refer to fig. 2, which shows the fitting effect of the original device flicker noise (1/f) model, i.e. the first flicker noise model, and refer to fig. 3, which shows the fitting effect of the second flicker noise model sid=f (w, l, f, T) ×f (sa, sb), where the fitting effect of the second flicker noise model is better, so that a noise model related to the different lateral active area environments can be obtained, and a designer can learn the characteristics of the device in the different lateral active area environments by simulating the model, so that the factor can be taken into consideration when starting the design, so that the new model can reflect the actual device characteristics more.
Referring to fig. 1, the present invention further provides a method for extracting a flicker noise model based on a lateral active region effect, including:
step one, designing device structures of different lateral active area environments, and then acquiring measurement data of the device structures;
in an alternative embodiment, the device structure in step one includes an active device and a passive device. Active component: the circuit device can execute data operation and processing. Including a wide variety of wafers, such as active crystals in semiconductor devices, integrated circuits, imaging transistors, and displays, are among the active devices. Active devices are also known as active devices. Basic definition of an active device an electronic component is called an active device if, when the component is in operation, a power source is present within the component. An active device is an electronic component that has a gain or depends on the direction of current flow. In practice, electronic components other than resistors, capacitors, and inductors (these components are referred to as "passive devices"). Examples of active devices are transistors, silicon controlled rectifiers, vacuum tubes, etc. Passive device (Passive Components): the active device is a circuit device that does not affect the basic characteristics of the signal, but only allows the signal to pass through without modification. The most common are resistors, capacitors, inductors, ceramic shakes, crystal shakes, transformers, etc.
In an alternative embodiment, the method for designing device structures of different lateral active area environments in the first step, and then acquiring measurement data of the device structures includes: designing device layouts of different transverse active area environments, manufacturing a device structure on a substrate according to the device layouts, and measuring measurement data of the device structure.
Step two, a first flicker noise model is established according to the measured data, and parameters of the first flicker noise model comprise at least one of width, length frequency and temperature of a device structure; it should be noted that the parameters of the first flicker noise model may also include more types according to actual requirements.
In an alternative embodiment, the first flicker noise model in the second step is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature, respectively, of the device structure. It should be noted that the parameters of the first flicker noise model may also include more types according to actual requirements.
In an alternative embodiment, the method for establishing the first flicker noise model according to the measurement data in the second step includes: establishing a first flicker noise model, performing curve fitting according to the measured data, and judging whether the precision of the curve fitting accords with a set value or not: if not, adjusting the parameters until the curve fitting accords with the set value; if yes, proceeding to the following steps.
Step three, establishing a function related to the environment of the lateral active region according to the distance between the device structure channel and the edges of the left and right lateral active regions;
in an alternative embodiment, the function of the lateral active region context in step three is
，
And sa and sb are distances between the left active region and the right active region and the channel of the device structure, and gamma, alpha, beta, A, a, B, B, C, C, D and D are coefficients respectively.
In an alternative embodiment, the method for establishing the second flicker noise model according to the function of the lateral active region environment and the first flicker noise model in the third step includes: establishing a second flicker noise model, performing curve fitting on the environment of the transverse active area, and judging whether the precision of the curve fitting accords with a preset value or not: if yes, performing a second flicker noise model verification; if not, modifying the function of the lateral active region environment until the precision of curve fitting accords with a preset value.
And step four, establishing a second flicker noise model according to the function of the transverse active area environment and the first flicker noise model.
In an alternative embodiment, the second flicker noise model sid=f (w, l, f, T) x f (sa, sb) in step four.
In an alternative embodiment, please refer to fig. 2, which shows the fitting effect of the original device flicker noise (1/f) model, i.e. the first flicker noise model, and refer to fig. 3, which shows the fitting effect of the second flicker noise model sid=f (w, l, f, T) ×f (sa, sb), where the fitting effect of the second flicker noise model is better, so that a noise model related to the different lateral active area environments can be obtained, and a designer can learn the characteristics of the device in the different lateral active area environments by simulating the model, so that the factor can be taken into consideration when starting the design, so that the new model can reflect the actual device characteristics more.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
In conclusion, the invention improves the fitting precision of the flicker noise model; more reasonable layout can be designed; the function related to the changing size of the transverse active area is introduced, so that the modeling can be more accurate, and the characteristics in an actual circuit of the device can be better reflected; the method is suitable for noise models of various device types, such as MOS, various resistors and the like. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (13)
1. A flicker noise model based on lateral active area effects, comprising:
a first flicker noise model, parameters of the first flicker noise model including at least one of width, length frequency, temperature of the device structure;
a function of the lateral active region environment established as a function of the distance between the device structure channel and the left and right lateral active region edges;
and a second flicker noise model established according to the function of the lateral active region environment and the first flicker noise model.
2. The flicker noise model based on lateral active area effect of claim 1, wherein: the device structure includes an active device and a passive device.
3. The flicker noise model based on lateral active area effect of claim 1, wherein: the first flicker noise model is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature of the device structure, respectively.
4. A flicker noise model based on the lateral active area effect according to claim 1 or 3, characterized in that: the function of the lateral active region environment is that
，
Where sa, sb are the distances between the left and right active regions and the device structure channel, respectively, γ, α,
beta, A, a, B, B, C, C, D, D are coefficients.
5. The flicker noise model based on lateral active area effect of claim 4, wherein: the second flicker noise model sid=f (w, l, f, T) ×f (sa, sb).
6. The method for extracting a flicker noise model based on the lateral active region effect according to one of claims 1 to 5, comprising:
step one, designing device structures of different lateral active area environments, and then acquiring measurement data of the device structures;
establishing a first flicker noise model according to the measurement data, wherein parameters of the first flicker noise model comprise at least one of width, length frequency and temperature of the device structure;
step three, establishing a function related to the environment of the lateral active region according to the distance between the device structure channel and the edges of the left and right lateral active regions;
and step four, establishing a second flicker noise model according to the function of the transverse active area environment and the first flicker noise model.
7. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: the device structure in the first step comprises an active device and a passive device.
8. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: in the first step, the method for designing the device structures in different lateral active area environments and then obtaining the measurement data of the device structures comprises the following steps: designing device layouts of different lateral active area environments, manufacturing the device structure on a substrate according to the device layouts, and measuring the measurement data of the device structure.
9. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: the first flicker noise model in the second step is sid=f (w, l, f, T), w, l, f, T being the width, length, frequency, temperature of the device structure, respectively.
10. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: the method for establishing the first flicker noise model according to the measurement data in the second step comprises the following steps: establishing the first flicker noise model, then performing curve fitting according to the measurement data, and judging whether the precision of the curve fitting accords with a set value or not: if not, adjusting the parameters until the curve fitting accords with a set value; if yes, proceeding to the following steps.
11. The method for extracting a flicker noise model based on the lateral active region effect according to claim 1 or 9, characterized in that: the function of the lateral active region environment in the third step is that
，
Where sa, sb are the distances between the left and right active regions and the device structure channel, respectively, γ, α,
beta, A, a, B, B, C, C, D, D are coefficients.
12. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: the method for establishing a second flicker noise model according to the function of the lateral active region environment and the first flicker noise model in the third step comprises the following steps: establishing the second flicker noise model, performing curve fitting on the environment of the transverse active area, and judging whether the precision of the curve fitting accords with a preset value or not: if yes, verifying the second flicker noise model; if not, modifying the function of the transverse active area environment until the precision of curve fitting accords with a preset value.
13. The method for extracting flicker noise model based on the lateral active region effect according to claim 6, wherein: the second flicker noise model sid=f (w, l, f, T) x f (sa, sb) in step four.
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