CN116590787B - Continuous charging silicon single crystal furnace - Google Patents
Continuous charging silicon single crystal furnace Download PDFInfo
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- CN116590787B CN116590787B CN202310883519.8A CN202310883519A CN116590787B CN 116590787 B CN116590787 B CN 116590787B CN 202310883519 A CN202310883519 A CN 202310883519A CN 116590787 B CN116590787 B CN 116590787B
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- 239000013078 crystal Substances 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 21
- 239000010703 silicon Substances 0.000 title claims abstract description 21
- 239000002210 silicon-based material Substances 0.000 claims abstract description 78
- 238000002425 crystallisation Methods 0.000 claims abstract description 11
- 230000008025 crystallization Effects 0.000 claims abstract description 11
- 239000000843 powder Substances 0.000 claims description 22
- 238000007873 sieving Methods 0.000 claims description 18
- 238000002844 melting Methods 0.000 claims description 14
- 230000008018 melting Effects 0.000 claims description 14
- 239000006052 feed supplement Substances 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000014759 maintenance of location Effects 0.000 claims description 7
- 230000006978 adaptation Effects 0.000 claims 1
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000002994 raw material Substances 0.000 abstract description 49
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 31
- 230000005540 biological transmission Effects 0.000 abstract description 18
- 238000000034 method Methods 0.000 abstract description 11
- 238000004939 coking Methods 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 238000007599 discharging Methods 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000001125 extrusion Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000013016 damping Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004781 supercooling Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
- B07B1/28—Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting or wobbling screens
- B07B1/282—Moving screens not otherwise provided for, e.g. swinging, reciprocating, rocking, tilting or wobbling screens their jigging movement being a closed or open curvilinear path in a plane perpendicular to the plane of the screen and parrallel or transverse to the direction of conveyance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B07—SEPARATING SOLIDS FROM SOLIDS; SORTING
- B07B—SEPARATING SOLIDS FROM SOLIDS BY SIEVING, SCREENING, SIFTING OR BY USING GAS CURRENTS; SEPARATING BY OTHER DRY METHODS APPLICABLE TO BULK MATERIAL, e.g. LOOSE ARTICLES FIT TO BE HANDLED LIKE BULK MATERIAL
- B07B1/00—Sieving, screening, sifting, or sorting solid materials using networks, gratings, grids, or the like
- B07B1/42—Drive mechanisms, regulating or controlling devices, or balancing devices, specially adapted for screens
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a continuous charging silicon single crystal furnace, which comprises a shaking type silicon material conveying belt component, a silicon material quantitative transferring and conveying component, a silicon material transferring structure supporting component and a crystallization furnace structure component. The invention belongs to the technical field of silicon single crystal furnaces, and particularly relates to a continuous feeding silicon single crystal furnace; the invention shakes monocrystalline silicon raw materials through the shaking type silicon material conveying belt component, screens tiny raw materials in the monocrystalline silicon raw materials, avoids scattering and coking of the tiny monocrystalline silicon in the crucible due to high temperature, influences the service life of the crucible, and reduces damage to the crucible. In order to screen out tiny raw materials in monocrystalline silicon raw materials, an eccentric shaking conveying member and a conveying belt pushing member are provided in the device, the eccentric gear shakes monocrystalline silicon raw materials in the transportation process and drops from between the transmission rods, so that the tiny raw materials can be conveniently recovered, and the device is convenient for secondary use.
Description
Technical Field
The invention belongs to the technical field of silicon single crystal furnaces, and particularly relates to a continuous feeding silicon single crystal furnace.
Background
The single crystal silicon growing furnace is a manufacturing device for producing single crystal silicon by a Czochralski method, a high-purity polycrystalline silicon raw material is put into a high-purity quartz crucible, after the high temperature generated by a graphite heater melts the raw material, the molten silicon liquid is slightly cooled to generate a certain supercooling degree, then a silicon single crystal fixed on a seed crystal shaft, namely a seed crystal, is inserted into the surface of a melt, after the seed crystal and the melt are melted, the seed crystal is slowly pulled upwards, and the crystal grows at the lower end of the seed crystal.
In the melting process of the monocrystalline silicon raw material, the melting temperature is too high, so that the temperature of 1420 ℃ can be reached, tiny monocrystalline silicon raw materials in the melted raw material are easy to scatter and coke at high temperature, a crucible is damaged, the service life of the crucible is influenced, the monocrystalline silicon raw material is put in a manual mode at present, the tiny raw materials need to be mixed among large raw materials, the scattered and then burnt tiny raw materials are avoided as much as possible, and the investment of labor cost is increased intangibly.
Disclosure of Invention
Aiming at the situation, in order to overcome the defects in the prior art, the invention provides the continuous charging silicon single crystal furnace, which shakes the single crystal silicon raw material through the shaking type silicon material conveying belt component, sieves the tiny raw material in the silicon single crystal raw material, avoids scattering and coking of the tiny single crystal silicon in the crucible due to high temperature, influences the service life of the crucible and reduces the damage to the crucible.
In order to screen out tiny raw materials in the monocrystalline silicon raw materials, an eccentric shaking conveying member and a conveying belt pushing member are provided in the device, and the eccentric gear shakes the monocrystalline silicon raw materials in the transportation process and drops from between the transmission rods, so that the tiny raw materials are conveniently recovered and are conveniently reused; in order to reduce the investment of labor cost, the shaking type silicon material conveying belt component and the silicon material quantitative conveying component provided by the invention realize that under the condition of no manual operation, the phenomenon that the single crystal silicon raw material is extruded and jammed due to the characteristics and the polygonal shape is avoided, and the transmission efficiency is influenced.
The technical scheme adopted by the invention is as follows: the invention provides a continuous charging silicon single crystal furnace, which comprises a shaking type silicon material conveying belt component, a silicon material quantitative transfer conveying component, a silicon material transfer structure supporting component and a crystallization furnace structure component, wherein the shaking type silicon material conveying belt component is arranged below the silicon material quantitative transfer conveying component, the silicon material transfer structure supporting component is connected with the shaking type silicon material conveying belt component and the silicon material quantitative transfer conveying component, the silicon material transfer structure supporting component provides structural support for the shaking type silicon material conveying belt component and the silicon material quantitative transfer conveying component, the crystallization furnace structure component is a part of the single crystal furnace connected with the silicon material transfer structure supporting component, the shaking type silicon material conveying belt component comprises an eccentric shaking conveying component and a conveying belt pushing component, the conveying belt pushing component is arranged at two sides of the eccentric shaking conveying component, and the shaking type silicon material conveying belt component and the silicon material quantitative transfer conveying component in the device are pushed back and forth to each other through mutual matching, so that the phenomenon that the single crystal silicon raw materials are jammed and extruded in the process of conveying and sieving is avoided;
the eccentric shaking conveying member comprises a conveying belt assembly and a conveying belt driving assembly, the conveying belt driving assembly is connected with the driving conveying belt assembly, the conveying belt assembly comprises conveying rods, end holes and connecting lock catches, the conveying rods are distributed in an array mode, the end portions Kong Dongkai are arranged at the end portions of the two ends of the conveying rods, and the connecting lock catches are used for connecting adjacent conveying rods;
the conveyor belt driving assembly comprises a driving support rod and an end eccentric special-shaped gear, wherein gear teeth of the end eccentric special-shaped gear are meshed with the conveying rod piece to drive the conveyor belt assembly;
the conveyor belt driving assembly comprises a pushing powder sieving groove and a pushing assembly, the pushing assembly pushes the pushing powder sieving groove, the pushing powder sieving groove comprises a supporting plate, a connecting wall, a connecting bottom plate, a limiting groove and a fixing limiting block, the supporting plate is fixedly connected to the upper end part of the connecting wall, the connecting bottom plate is arranged at the lower end part of the connecting wall, the limiting groove is C-shaped and is arranged on the connecting bottom plate, the fixing limiting block is T-shaped, the fixing limiting block is inserted in the limiting groove, and the limiting groove and the fixing limiting block in the device limit the movement track of the pushing powder sieving groove through clamping, so that the damping effect of the conveyor belt driving assembly is achieved;
the device comprises a conveying belt driving assembly, a single crystal silicon raw material conveying belt, a driving assembly and a driving assembly, wherein the driving assembly comprises a driving center shaft, an eccentric wrapping column, a center shaft fixing block, a driving belt, a driving gear and a driving motor, the upper end and the lower end of the driving center shaft are connected with the center shaft fixing block, the driving center shaft is inserted into the center shaft fixing block and rotates freely, the inner wall of the eccentric wrapping column is fixedly connected with the driving center shaft, the driving belt wraps the upper part of the driving center shaft and the outside of the driving gear, the driving gear is connected with the driving motor through signals, and the eccentric wrapping column in the device pushes a powder sieving groove back and forth to push and pull the conveying belt driving assembly in the left-right direction, so that shaking sieving of the single crystal silicon raw material is increased, and synchronous shaking of the conveying belt driving assembly in the up-down and left-right directions is realized through the end eccentric special-shaped gear and the eccentric wrapping column.
Preferably, the silicon material quantitative transfer conveying member comprises a silicon material throwing cavity, a base plate and a quantitative rotary gear, wherein the bottom of the silicon material throwing cavity is fixedly connected with the base plate, the base plate is inclined at a certain angle, and the quantitative rotary gear is arranged below the base plate.
As a further preferred mode of the invention, the quantitative rotary gear comprises a quantitative notch, a rotary special-shaped gear, a rotary middle shaft, a coating outer cavity, a blanking port and a discharging port, wherein the quantitative notch is arranged on the rotary special-shaped gear in an array mode, the rotary middle shaft is fixedly connected with the rotary special-shaped gear, the coating outer cavity is coated outside the rotary special-shaped gear, the blanking port is arranged at the upper end part of the coating outer cavity, the discharging port is arranged at the lower part of the coating outer cavity, the size of the blanking port is matched with that of the discharging port, and the quantitative notch in the device quantitatively transfers single crystal silicon raw materials with the same volume through a fixed space, so that extrusion congestion of single crystal silicon raw materials can be avoided.
Further, the silicon material transfer structure supporting member comprises a shielding side plate, a shielding rear plate, a silicon material residual powder outlet and an external motor box, wherein the shielding side plate is fixedly connected with the shielding rear plate, the silicon material residual powder outlet is arranged at the lower part of the shielding rear plate, and the external motor box provides power support for the device.
Preferably, the crystallization furnace structural member comprises a feed supplement port, an outer crucible, an inner crucible, a melting port, a heating device and a crystal pulling pipeline, wherein the feed supplement port is arranged at the lower part of one end of the conveyor belt assembly, the outer crucible is arranged at the outer part of the inner crucible, the melting port is arranged below the inner crucible, the heating device is arranged at the outer part of the melting port, and the crystal pulling pipeline is arranged above the melting port.
As a further preferable aspect of the present invention, the driving support bar is connected to an external motor housing, the driving motor is electrically connected to the external motor housing, and the rotation center shaft is electrically connected to the external motor housing.
The beneficial effects obtained by the invention by adopting the structure are as follows:
1, the shaking type silicon material conveying belt component and the silicon material quantitative transferring and conveying component in the device meet the requirements of congestion and extrusion of monocrystalline silicon raw materials in the process of conveying and sieving, and influence the use effect of the device;
2 the eccentric special-shaped gear at the end part in the device utilizes the physical characteristics of the eccentric special-shaped gear, and realizes the shaking, running and transmission of the single crystal silicon raw material by the transmission rod piece through the up-down accelerated movement of the eccentric shaking transmission member;
3, the limiting groove and the retention limiting block in the device limit the movement track of the pushing powder sieving groove through clamping, so that the damping effect of the conveying belt driving assembly is achieved;
4, the eccentric wrapping column in the device of the invention realizes the push-pull of the conveyor belt driving assembly in the left-right direction by pushing the pushing powder sieving groove back and forth, increases the shaking sieving of the monocrystalline silicon raw material, and realizes the synchronous shaking of the conveyor belt driving assembly in the up-down and left-right directions by the eccentric special-shaped gear and the eccentric wrapping column at the end part;
5 the quantitative notch in the device quantitatively transfers the monocrystalline silicon raw material with the same volume through the fixed space, so that extrusion congestion of the monocrystalline silicon raw material can be avoided.
Drawings
FIG. 1 is a front view of a continuous feed silicon single crystal furnace according to the present invention;
FIG. 2 is a side view of a continuous feed silicon single crystal furnace according to the present invention;
FIG. 3 is a cross-sectional view taken along section line A-A of FIG. 2;
FIG. 4 is a cross-sectional view taken along section line B-B in FIG. 3;
FIG. 5 is a cross-sectional view taken along section line C-C in FIG. 4;
FIG. 6 is a cross-sectional view taken along section line D-D in FIG. 5;
FIG. 7 is an enlarged view of a portion of the portion I of FIG. 6;
FIG. 8 is an enlarged view of a portion of the portion II of FIG. 4;
FIG. 9 is an enlarged view of a portion of III in FIG. 5;
fig. 10 is a schematic view of a conveyor belt assembly according to the present invention.
Wherein, 1, shaking type silicon material conveyer belt components, 2, silicon material quantitative transfer conveying components, 3, silicon material transfer structure supporting components, 4, crystallization furnace structure components, 5, eccentric shaking conveying components, 6, conveyer belt pushing components, 7, silicon material throwing cavities, 8, a bottom plate, 9, quantitative rotating gears, 10, a shielding side plate, 11, a shielding rear plate, 12, a silicon material residual powder outlet, 13, an external motor case, 14, a feed supplement port, 15, an external crucible, 16, an internal crucible, 17, a melting port, 18, a heating device, 19, a crystal pulling pipeline, 20, a conveyer belt component, 21, a conveyor belt driving assembly, 22, a pushing powder sieving groove, 23, a pushing assembly, 24, a conveying rod piece, 25, a hole at the end, 26, a connecting lock catch, 27, a driving supporting rod, 28, an eccentric special-shaped gear at the end, 29, a supporting plate, 30, a connecting wall, 31, a connecting bottom plate, 32, a limiting groove, 33, a fixing limiting block, 34, a driving center shaft, 35, an eccentric wrapping column, 36, a center shaft fixing block, 37, a driving belt, 38, a driving gear, 39, a driving motor, 40, a quantitative notch, 41, a rotating special-shaped gear, 42, a rotating center shaft, 43, a wrapping outer cavity, 44, a blanking port, 45 and a discharging port.
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "upper," "lower," "front," "rear," "left," "right," "top," "bottom," "inner," "outer," and the like indicate orientation or positional relationships based on those shown in the drawings, merely to facilitate description of the invention and simplify the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the invention.
As shown in fig. 1-10, the present invention proposes a continuous charging silicon single crystal furnace, comprising a shaking type silicon material conveying belt member 1, a silicon material quantitative transfer conveying member 2, a silicon material transfer structure supporting member 3, and a crystallization furnace structure member 4, wherein the shaking type silicon material conveying belt member 1 is arranged below the silicon material quantitative transfer conveying member 2, the silicon material transfer structure supporting member 3 is connected with the shaking type silicon material conveying belt member 1 and the silicon material quantitative transfer conveying member 2, the silicon material transfer structure supporting member 3 provides structural support for the shaking type silicon material conveying belt member 1 and the silicon material quantitative transfer conveying member 2, the crystallization furnace structure member 4 is a part of the single crystal furnace connected with the silicon material transfer structure supporting member 3, the shaking type silicon material conveying belt member 1 comprises an eccentric shaking conveying member 5 and a conveying belt pushing member 6, the conveying belt pushing member 6 is arranged at two sides of the eccentric shaking conveying member 5, and the conveying belt pushing member 6 pushes the shaking type shaking conveying member 5 back and forth;
the eccentric shaking transmission member 5 comprises a transmission belt assembly 20 and a transmission belt driving assembly 21, the transmission belt driving assembly 21 is connected with the driving transmission belt assembly 20, the transmission belt assembly 20 comprises transmission rod pieces 24, end holes 25 and connecting lock catches 26, the transmission rod pieces 24 are distributed in an array, the end holes 25 are formed at the two end parts of the transmission rod pieces 24, and the connecting lock catches 26 are used for connecting adjacent transmission rod pieces 24;
the conveyor belt drive assembly 21 includes a drive support bar 27 and an end eccentric profile gear 28, the teeth of the end eccentric profile gear 28 engaging the conveyor bar 24 to drive the conveyor belt assembly 20;
the conveyor belt driving assembly 21 comprises a pushing powder sieving groove 22 and a pushing assembly 23, the pushing assembly 23 pushes the pushing powder sieving groove 22, the pushing powder sieving groove 22 comprises a supporting plate 29, a connecting wall 30, a connecting bottom plate 31, a limiting groove 32 and a retention limiting block 33, the supporting plate 29 is fixedly arranged at the upper end part of the connecting wall 30, the connecting bottom plate 31 is arranged at the lower end part of the connecting wall 30, the limiting groove 32 is C-shaped and is arranged on the connecting bottom plate 31, the retention limiting block 33 is T-shaped, and the retention limiting block 33 is inserted in the limiting groove 32;
the pushing assembly 23 comprises a driving center shaft 34, an eccentric wrapping column 35, a center shaft fixing block 36, a driving belt 37, a driving gear 38 and a driving motor 39, wherein the upper end and the lower end of the driving center shaft 34 are connected with the center shaft fixing block 36, the driving center shaft 34 is inserted into the center shaft fixing block 36 and rotates freely, the inner wall of the eccentric wrapping column 35 is fixedly connected with the driving center shaft 34, the driving belt 37 wraps the upper part of the driving center shaft 34 and the outside of the driving gear 38, and the driving gear 38 is in signal connection with the driving motor 39.
The silicon material quantitative transfer conveying member 2 comprises a silicon material throwing cavity 7, a bottom plate 8 and a quantitative rotary gear 9, wherein the bottom of the silicon material throwing cavity 7 is fixedly connected with the bottom plate 8, the bottom plate 8 is inclined at a certain angle, and the quantitative rotary gear 9 is arranged below the bottom plate 8.
The quantitative rotary gear 9 comprises a quantitative notch 40, a rotary special-shaped gear 41, a rotary middle shaft 42, a wrapping outer cavity 43, a blanking port 44 and a discharge port 45, wherein the quantitative notch 40 is arranged on the rotary special-shaped gear 41 in an array mode, the rotary middle shaft 42 is fixedly connected with the rotary special-shaped gear 41, the wrapping outer cavity 43 wraps the rotary special-shaped gear 41, the blanking port 44 is arranged at the upper end portion of the wrapping outer cavity 43, the discharge port 45 is arranged at the lower portion of the wrapping outer cavity 43, and the size of the blanking port 44 and the size of the discharge port 45 are matched with the quantitative notch 40.
The silicon material transfer structure supporting member 3 comprises a shielding side plate 10, a shielding rear plate 11, a silicon material residual powder outlet 12 and an external motor box 13, wherein the shielding side plate 10 is fixedly connected with the shielding rear plate 11, the silicon material residual powder outlet 12 is arranged at the lower part of the shielding rear plate 11, and the external motor box 13 provides power support for the device.
The crystallization furnace structural member 4 comprises a feed supplement port 14, an outer crucible 15, an inner crucible 16, a melting port 17, a heating device 18 and a crystal pulling pipeline 19, wherein the feed supplement port 14 is arranged at the lower part of one end of the conveyor belt assembly 20, the outer crucible 15 is arranged at the outer part of the inner crucible 16, the melting port 17 is arranged below the inner crucible 16, the heating device 18 is arranged at the outer part of the melting port 17, and the crystal pulling pipeline 19 is arranged above the melting port 17.
The driving support rod 27 is connected with the external motor case 13, the driving motor 39 is electrically connected with the external motor case 13, and the rotation center shaft 42 is electrically connected with the external motor case 13.
When the device is specifically used, the external motor box 13 is connected with a power supply, the driving support rod 27, the driving motor 39 and the rotating center shaft 42 are operated, the polycrystalline silicon raw material is placed in the silicon material throwing cavity 7, slides to the quantitative rotating gear 9 along the inclined placing bottom plate 8, the polycrystalline silicon raw material falls into the quantitative notch 40 and rotates the special-shaped gear 41 to operate under the driving of the rotating center shaft 42, the polycrystalline silicon raw material in the quantitative notch 40 falls into the eccentric shaking conveying member 5 from the discharging hole 45, the micro-shaped polycrystalline silicon raw material falls from the position between the conveying rods 24, the driving support rod 27 drives the end eccentric special-shaped gear 28 to accelerate shaking of the conveying belt assembly 20, meanwhile, the driving motor 39 drives the driving belt 37 to pump the driving center shaft 34 through the driving gear 38, the eccentric wrapping column 35 is driven to push the connecting wall 30 of the eccentric shaking conveying member 5, after multidirectional shaking of the polycrystalline silicon raw material is realized, the polycrystalline silicon raw material enters the inner crucible 16 from the feeding hole 14, and the micro-shaped polycrystalline silicon raw material is taken out from the silicon material residual powder outlet 12, and is convenient to be used later.
The whole working flow of the invention is just the above, and the step is repeated when the invention is used next time.
The actual operation process is very simple and easy, the single crystal silicon raw material is dithered through the dithered silicon material conveying belt component, tiny raw materials in the single crystal silicon raw material are screened, the phenomenon that tiny single crystal silicon flies and is burnt in a crucible due to high temperature is avoided, the service life of the crucible is influenced, and the damage to the crucible is reduced.
In order to screen out tiny raw materials in monocrystalline silicon raw materials, an eccentric shaking conveying member and a conveying belt pushing member are provided in the device, and the monocrystalline silicon raw materials are shaken in the transportation process through eccentric gears in the eccentric shaking conveying member and fall from between transmission rods, so that the tiny raw materials are conveniently recovered and are conveniently reused; in order to reduce the investment of labor cost, the shaking type silicon material conveying belt component and the silicon material quantitative conveying component provided by the invention realize that under the condition of no manual operation, the phenomenon that the single crystal silicon raw material is extruded and jammed due to the characteristics and the polygonal shape is avoided, and the transmission efficiency is influenced.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Although embodiments of the present invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made therein without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
The invention and its embodiments have been described above with no limitation, and the actual construction is not limited to the embodiments of the invention as shown in the drawings. In summary, if one of ordinary skill in the art is informed by this disclosure, a structural manner and an embodiment similar to the technical solution should not be creatively devised without departing from the gist of the present invention.
Claims (6)
1. A continuous charging silicon single crystal furnace is characterized in that: the device comprises a shaking type silicon material conveying belt component (1), a silicon material quantitative conveying component (2), a silicon material conveying structure supporting component (3) and a crystallization furnace structure component (4), wherein the shaking type silicon material conveying belt component (1) is arranged below the silicon material quantitative conveying component (2), the silicon material conveying structure supporting component (3) is connected with the shaking type silicon material conveying belt component (1) and the silicon material quantitative conveying component (2), the silicon material conveying structure supporting component (3) provides structural support for the shaking type silicon material conveying belt component (1) and the silicon material quantitative conveying component (2), the crystallization furnace structure component (4) is a part of a single crystal furnace connected with the silicon material conveying structure supporting component (3), the shaking type silicon material conveying belt component (1) comprises an eccentric conveying component (5) and a conveying belt pushing component (6), the conveying belt pushing component (6) is arranged on two sides of the eccentric conveying component (5), and the shaking conveying belt pushing component (6) pushes the eccentric conveying component (5) back and forth;
the eccentric shaking conveying component (5) comprises a conveying belt component (20) and a conveying belt driving component (21), the conveying belt driving component (21) is connected with the driving conveying belt component (20), the conveying belt component (20) comprises conveying rods (24), end holes (25) and connecting locks (26), the conveying rods (24) are distributed in an array mode, the end holes (25) are formed in two end portions of the conveying rods (24), and the connecting locks (26) are used for connecting adjacent conveying rods (24);
the conveyor belt driving assembly (21) comprises a driving support rod (27) and an end eccentric special-shaped gear (28), and gear teeth of the end eccentric special-shaped gear (28) are meshed with the conveying rod piece (24) to drive the conveyor belt assembly (20); the conveyor belt driving assembly (21) comprises a pushing powder sieving groove (22) and a pushing assembly (23), the pushing assembly (23) pushes the pushing powder sieving groove (22), the pushing powder sieving groove (22) comprises a supporting plate (29), a connecting wall (30), a connecting bottom plate (31), a limiting groove (32) and a retention limiting block (33), the supporting plate (29) is fixedly connected to the upper end part of the connecting wall (30), the connecting bottom plate (31) is arranged at the lower end part of the connecting wall (30), the limiting groove (32) is C-shaped and is arranged on the connecting bottom plate (31), the retention limiting block (33) is T-shaped, and the retention limiting block (33) is inserted in the limiting groove (32);
the pushing assembly (23) comprises a driving center shaft (34), an eccentric wrapping column (35), a center shaft fixing block (36), a driving belt (37), a driving gear (38) and a driving motor (39), wherein the upper end and the lower end of the driving center shaft (34) are connected with the center shaft fixing block (36), the driving center shaft (34) is inserted into the center shaft fixing block (36) and rotates freely, the inner wall of the eccentric wrapping column (35) is fixedly connected with the driving center shaft (34), and the driving belt (37) wraps the upper portion of the driving center shaft (34) and the outside of the driving gear (38), and the driving gear (38) is in signal connection with the driving motor (39).
2. The continuous feed silicon single crystal furnace according to claim 1, wherein: the quantitative transfer conveying component (2) for the silicon material comprises a silicon material throwing cavity (7), a base plate (8) and a quantitative rotary gear (9), wherein the base plate (8) is fixedly connected to the bottom of the silicon material throwing cavity (7), the base plate (8) is inclined at a certain angle, and the quantitative rotary gear (9) is arranged below the base plate (8).
3. The continuous feed silicon single crystal furnace according to claim 2, wherein: quantitative rotation gear (9) are including ration breach (40), rotatory special-shaped gear (41), rotatory axis (42), parcel outer chamber (43), blanking mouth (44) and discharge gate (45), on rotatory special-shaped gear (41) are arranged in array form to quantitative breach (40), rotatory axis (42) and rotatory special-shaped gear (41) rigid coupling, parcel outer chamber (43) parcel is in the outside of rotatory special-shaped gear (41), the upper end in parcel outer chamber (43) is located in blanking mouth (44), the lower part in parcel outer chamber (43) is located in discharge gate (45), the size and the quantitative breach (40) adaptation of blanking mouth (44) and discharge gate (45).
4. A continuous feed silicon single crystal furnace according to claim 3, wherein: the silicon material transfer structure supporting member (3) comprises a shielding side plate (10), a shielding rear plate (11), a silicon material residual powder outlet (12) and an external motor box (13), wherein the shielding side plate (10) is fixedly connected with the shielding rear plate (11), the silicon material residual powder outlet (12) is arranged at the lower part of the shielding rear plate (11), and the external motor box (13) provides power support for the device.
5. The continuous feed silicon single crystal furnace according to claim 4, wherein: the crystallization furnace structural member (4) comprises a feed supplement port (14), an outer crucible (15), an inner crucible (16), a melting port (17), a heating device (18) and a crystal pulling pipeline (19), wherein the feed supplement port (14) is arranged at the lower part of one end of the conveyor belt assembly (20), the outer crucible (15) is arranged at the outer part of the inner crucible (16), the melting port (17) is arranged below the inner crucible (16), the heating device (18) is arranged at the outer part of the melting port (17), and the crystal pulling pipeline (19) is arranged above the melting port (17).
6. The continuous feed silicon single crystal furnace according to claim 5, wherein: the driving support rod (27) is connected with the external motor box (13), the driving motor (39) is electrically connected with the external motor box (13), and the rotating center shaft (42) is electrically connected with the external motor box (13).
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