CN116590711A - Polishing solution for palladium and copper chemical mechanical polishing and preparation method and application method thereof - Google Patents
Polishing solution for palladium and copper chemical mechanical polishing and preparation method and application method thereof Download PDFInfo
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- CN116590711A CN116590711A CN202310555181.3A CN202310555181A CN116590711A CN 116590711 A CN116590711 A CN 116590711A CN 202310555181 A CN202310555181 A CN 202310555181A CN 116590711 A CN116590711 A CN 116590711A
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- polishing
- mechanical polishing
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 238000005498 polishing Methods 0.000 title claims abstract description 110
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 63
- 239000010949 copper Substances 0.000 title claims abstract description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052763 palladium Inorganic materials 0.000 title claims abstract description 58
- 239000000126 substance Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 239000002113 nanodiamond Substances 0.000 claims abstract description 34
- 239000008139 complexing agent Substances 0.000 claims abstract description 23
- 230000007797 corrosion Effects 0.000 claims abstract description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 14
- 239000003112 inhibitor Substances 0.000 claims abstract description 12
- 239000008367 deionised water Substances 0.000 claims abstract description 11
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000243 solution Substances 0.000 claims description 47
- 239000011259 mixed solution Substances 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 17
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 12
- 238000009826 distribution Methods 0.000 claims description 7
- 239000011780 sodium chloride Substances 0.000 claims description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 4
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 claims description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 claims description 2
- 239000005695 Ammonium acetate Substances 0.000 claims description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 2
- 235000019257 ammonium acetate Nutrition 0.000 claims description 2
- 229940043376 ammonium acetate Drugs 0.000 claims description 2
- 230000003750 conditioning effect Effects 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 239000004323 potassium nitrate Substances 0.000 claims description 2
- 235000010333 potassium nitrate Nutrition 0.000 claims description 2
- BHSSJHCINKZVQB-UHFFFAOYSA-N 2-(2H-tetrazol-5-yl)benzenethiol Chemical compound SC1=CC=CC=C1C1=NNN=N1 BHSSJHCINKZVQB-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 230000000694 effects Effects 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- 238000004132 cross linking Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- 239000012964 benzotriazole Substances 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000227 grinding Methods 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 benzene propane triazole Chemical compound 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F3/00—Brightening metals by chemical means
- C23F3/04—Heavy metals
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The application provides a polishing solution for palladium and copper chemical mechanical polishing, a preparation method and a use method thereof. The polishing solution for the chemical mechanical polishing of palladium and copper comprises the following components in percentage by weight: 0.5 to 10 percent of nano diamond, 5 to 10 percent of complexing agent, 0.03 to 0.05 percent of corrosion inhibitor, 0.02 to 1 percent of pH regulator and 83 to 95 percent of deionized water. The polishing solution can be used for removing redundant materials on the surface of a workpiece and flattening the workpiece in a global nanoscale manner aiming at palladium-copper coplanar materials with the same thickness, so that the phenomenon that metal crosslinking loses the flatness of the workpiece due to multilayer superposition effect is avoided, and the subsequent photoetching process is facilitated.
Description
Technical Field
The application belongs to the technical field of polishing solutions, and particularly relates to a polishing solution for chemical mechanical polishing of palladium and copper, a preparation method and a use method thereof.
Background
Chemical mechanical polishing (Chemical Mechanical Polishing, CMP) is a means of achieving global planarization in integrated circuit fabrication, while the polishing slurry is a mixture used during the workpiece surface planarization process that includes abrasive materials and chemical additives. Currently, the chemical mechanical polishing slurry used for electroplating palladium materials has a composition similar to metallic copper, i.e., a silica slurry. The silicon dioxide polishing solution mainly comprises grinding particles, a metal corrosion inhibitor, a complexing agent, an oxidant and the like. In recent years, the surface of a substrate is often plated with a palladium material as a functional material, and also plated with a copper material as an auxiliary material. After the substrate is ground, a flat surface with palladium and copper coexisting is formed on the front surface of the workpiece, wherein the Roughness (Roughness) is measured to be 0.08-0.1 mu m by a 3D microscope, and the surface Roughness is 0.041 mu m after the substrate is ground.
However, the above processing results cannot meet the process requirements. It has the following problems: first, the object of the chemical mechanical polishing is palladium copper coplanar material with the same thickness, and the effect of the chemical mechanical polishing treatment on palladium and copper is greatly different. The chemical property of palladium is inactive, the palladium can be kept stable in air and a humid environment at normal temperature, weak acid corrosion resistance is realized, and even the removal of oxides of palladium is required to be performed at high temperature, so that an oxidant with oxidation corrosion effect on copper in a polishing solution cannot corrode palladium, and the problem that the removal rate of the two is large is caused, for example, when copper has a removal amount of 6 mu m, copper and palladium form a height difference of 1.45 mu m, and the surface of a substrate is uneven. Secondly, as the removal increases, the difference in height between palladium and copper increases. In addition, palladium is higher than copper in height and has no supporting function of copper, radian can be formed due to mechanical action in the chemical mechanical polishing process, and the requirements of product morphology and usability cannot be met. In summary, the above factors ultimately lead to failure of the workpiece to achieve global nanoscale planarization, and subsequent photolithography processes are also not performed.
Therefore, there is a need in the art to develop a chemical mechanical polishing solution for palladium copper coplanar materials, so as to solve the above-mentioned problems and meet the use requirements.
Disclosure of Invention
Aiming at the defects of the prior art, the application aims to provide a polishing solution for palladium and copper chemical mechanical polishing, and a preparation method and a use method thereof. The polishing solution can be used for removing redundant materials on the surface of a workpiece and flattening the workpiece in a global nanoscale manner aiming at palladium-copper coplanar materials with the same thickness, so that the phenomenon that metal crosslinking loses the flatness of the workpiece due to multilayer superposition effect is avoided, and the subsequent photoetching process is facilitated.
In order to achieve the aim of the application, the application adopts the following technical scheme:
in a first aspect, the present application provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
according to the application, through improving the composition of the polishing solution, no oxidizing agent is added, the added nano-grade diamond grinding particles have the advantages of high hardness and low friction coefficient, the surface roughness of palladium and copper polished by adopting the chemical mechanical polishing solution with the specific composition is low, the two materials of palladium and copper can be taken into account, the removal amount of the two materials is ensured to be consistent, and the effect of global nano-grade planarization can be achieved.
In addition, the application ensures that the removal amount of palladium and copper is basically balanced by regulating and controlling the content of various components, and the removal amount is not generated when the content is too low, otherwise, the surface of the wafer is embossed to generate steps.
In the present application, the weight percentage of the nanodiamond is 0.5 to 10%, for example, may be 0.5%, 1%, 2%, 5%, 8%, 10%, etc.
In the present application, the complexing agent may be 5-10% by weight, for example, 5%, 6%, 7%, 8%, 9%, 10% by weight, etc.
In the present application, the weight percentage of the corrosion inhibitor is 0.03 to 0.05%, for example, may be 0.03%, 0.035%, 0.04%, 0.045%, 0.05%, etc.
In the present application, the weight percentage of the pH adjuster is 0.02 to 1%, for example, may be 0.02%, 0.05%, 0.08%, 0.1%, 0.5%, 0.8%, 1%, etc.
In the present application, the deionized water may be 83-95% by weight, for example, 83%, 85%, 88%, 90%, 92%, 95% by weight, etc.
Preferably, the polishing solution for palladium and copper chemical mechanical polishing consists of the following components in percentage by weight:
the particle size distribution of the nanodiamond is preferably 10 to 100nm, preferably 20 to 80nm, and may be, for example, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.
Preferably, the average particle size of the nanodiamond is 60nm, preferably 50nm.
Preferably, the complexing agent comprises any one or a combination of at least two of ethylenediamine tetraacetic acid, ethylenediamine, malonic acid or oxalic acid.
Preferably, the corrosion inhibitor comprises any one or a combination of at least two of benzene propane triazole, 5-phenyl tetrazole or hydrophobic phenyl tetrazole.
Preferably, the pH adjuster comprises any one or a combination of at least two of sodium chloride solution, ammonium acetate or potassium nitrate.
Preferably, the mass ratio of the nano diamond to the complexing agent is (0.5-1): 1, for example, 0.5:1, 0.6:1, 0.7:1, 0.8:1, 0.9:1, 1:1, etc.
In the application, the removal amount of palladium and copper is balanced by adjusting the mass ratio of the nano diamond to the complexing agent, if the mass ratio is too low, the removal amount is not available, otherwise, the height difference between the palladium and the copper is caused to generate a step.
In a second aspect, the present application provides a method for preparing the polishing liquid for palladium and copper chemical mechanical polishing according to the first aspect, the method comprising the steps of:
and (3) mixing the complexing agent, the corrosion inhibitor and deionized water for the first time to obtain a first mixed solution, then mixing the first mixed solution and the nano diamond for the second time to obtain a second mixed solution, adding a pH regulator, and then adjusting the pH value of the system to obtain the polishing solution for the chemical mechanical polishing of palladium and copper.
Preferably, the pH of the conditioning system is 6.95.
In a third aspect, the present application provides a method for using the polishing liquid for palladium and copper chemical mechanical polishing according to the first aspect, the method comprising: the polishing solution for the chemical mechanical polishing of palladium and copper is subjected to chemical mechanical polishing.
Preferably, the chemical mechanical polishing is performed at a pressure of 2psi for 30 minutes at a rotational speed of 70rpm.
Preferably, the polishing solution for palladium and copper chemical mechanical polishing is used in an amount of 3mL/min.
Compared with the prior art, the application has the following beneficial effects:
the application provides a polishing solution for chemical mechanical polishing of palladium and copper, which has the advantages of large hardness and low friction coefficient by improving the composition of the polishing solution and not adding an oxidant, and the added nano-scale diamond grinding particles have the advantages of low surface roughness of palladium and copper after being polished by adopting the chemical mechanical polishing solution with the specific composition, can give consideration to both materials of palladium and copper, ensure the consistent removal quantity of the two materials and achieve the effect of global nano-scale planarization.
In addition, the application ensures that the removal amount of palladium and copper is basically balanced by regulating and controlling the content of various components, and the removal amount is not generated when the content is too low, otherwise, the surface of the wafer is embossed.
Drawings
FIG. 1 is a graph showing the effect of a substrate polished by the polishing liquid provided in application example 1;
fig. 2 is an effect diagram of a substrate polished by the polishing liquid provided in comparative application example 1.
Detailed Description
The technical scheme of the application is further described below by combining the attached drawings and the specific embodiments. It will be apparent to those skilled in the art that the examples are merely to aid in understanding the application and are not to be construed as a specific limitation thereof.
Example 1
The embodiment provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
the particle size distribution of the nano diamond is 10-100 nm, the average particle diameter is 60nm, and the mass ratio of the nano diamond to the ethylenediamine tetraacetic acid complexing agent is 0.5:1.
The embodiment also provides a preparation method of the polishing solution, which comprises the following steps:
preparing a primary mixed solution with the volume of 500mL by using an ethylenediamine tetraacetic acid complexing agent, a benzotriazole corrosion inhibitor and deionized water with the resistivity of 6MΩ & cm, then secondarily mixing the primary mixed solution with nano diamond to obtain a secondary mixed solution, adding a sodium chloride solution, and then adjusting the pH value of the system to 6.95 to obtain the polishing solution for palladium and copper chemical mechanical polishing.
Example 2
The embodiment provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
the particle size distribution of the nano diamond is 10-100 nm, the average particle diameter is 60nm, and the mass ratio of the nano diamond to the ethylenediamine tetraacetic acid complexing agent is 0.5:1.
The embodiment also provides a preparation method of the polishing solution, which comprises the following steps:
preparing a primary mixed solution with the volume of 500mL by using an ethylenediamine tetraacetic acid complexing agent, a benzotriazole corrosion inhibitor and deionized water with the resistivity of 6MΩ & cm, then secondarily mixing the primary mixed solution with nano diamond to obtain a secondary mixed solution, adding a sodium chloride solution, and then adjusting the pH value of the system to 6.95 to obtain the polishing solution for palladium and copper chemical mechanical polishing.
Example 3
The embodiment provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
the particle size distribution of the nano diamond is 10-100 nm, the average particle diameter is 60nm, and the mass ratio of the nano diamond to the ethylenediamine tetraacetic acid complexing agent is 0.5:1.
The embodiment also provides a preparation method of the polishing solution, which comprises the following steps:
preparing a primary mixed solution with the volume of 500mL by using an ethylenediamine tetraacetic acid complexing agent, a benzotriazole corrosion inhibitor and deionized water with the resistivity of 6MΩ & cm, then secondarily mixing the primary mixed solution with nano diamond to obtain a secondary mixed solution, adding a sodium chloride solution, and then adjusting the pH value of the system to 6.95 to obtain the polishing solution for palladium and copper chemical mechanical polishing.
Example 4
The embodiment provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
the particle size distribution of the nano diamond is 10-100 nm, the average particle diameter is 60nm, and the mass ratio of the nano diamond to the ethylenediamine tetraacetic acid complexing agent is 0.5:1.
The embodiment also provides a preparation method of the polishing solution, which comprises the following steps:
preparing a primary mixed solution with the volume of 500mL by using an ethylenediamine tetraacetic acid complexing agent, a benzotriazole corrosion inhibitor and deionized water with the resistivity of 6MΩ & cm, then secondarily mixing the primary mixed solution with nano diamond to obtain a secondary mixed solution, adding a sodium chloride solution, and then adjusting the pH value of the system to 6.95 to obtain the polishing solution for palladium and copper chemical mechanical polishing.
Example 5
The embodiment provides a polishing solution for palladium and copper chemical mechanical polishing, which comprises the following components in percentage by weight:
the particle size distribution of the nano diamond is 10-100 nm, the average particle diameter is 60nm, and the mass ratio of the nano diamond to the ethylenediamine tetraacetic acid complexing agent is 1:1.
The embodiment also provides a preparation method of the polishing solution, which comprises the following steps:
preparing a primary mixed solution with the volume of 500mL by using an ethylenediamine tetraacetic acid complexing agent, a benzotriazole corrosion inhibitor and deionized water with the resistivity of 6MΩ & cm, then secondarily mixing the primary mixed solution with nano diamond to obtain a secondary mixed solution, adding a sodium chloride solution, and then adjusting the pH value of the system to 6.95 to obtain the polishing solution for palladium and copper chemical mechanical polishing.
Example 6
This example differs from example 1 in that the mass ratio of nanodiamond to complexing agent is 0.05:1, all other things being equal to example 1.
Example 7
This example differs from example 1 in that the mass ratio of nanodiamond to complexing agent is 1:0.5, all other things being equal to example 1.
Comparative example 1
This comparative example differs from example 1 in that nanodiamond was replaced with an equal amount of alumina, all other things being equal to example 1.
Comparative example 2
The comparative example differs from example 1 in that the weight percent of nanodiamond in the slurry was 0.1%, and the deionized water content was adjusted adaptively so that the total weight percent was 100%, all other things being equal to example 1.
Comparative example 3
The comparative example differs from example 1 in that the weight percentage of nanodiamond in the polishing liquid was 15%, and the content of deionized water was adjusted adaptively so that the total weight percentage of the total system was 100%, and the other was the same as example 1.
Comparative example 4
This comparative example provides a silica polishing solution comprising the following components:
application examples 1 to 7 and comparative application examples 1 to 4
The polishing solutions provided in examples 1 to 7 and comparative examples 1 to 4 were used for polishing palladium-copper wafers as follows:
the palladium-copper wafer with the size of 4 inches was polished with the above-mentioned slurry at a polishing pressure of 2psi, a polishing disk rotation speed of 70rpm, a slurry flow rate of 3mL/min, and a polishing time of 30min.
Test conditions
The palladium-copper wafers provided in application examples 1 to 7 and comparative application examples 1 to 4 were tested as follows:
(1) Surface roughness: measurement using a 3D microscope;
(2) Thickness: measuring by using a step instrument;
(3) Polishing rate: i.e., the difference in thickness between before and after polishing divided by the polishing time.
The test results are shown in table 1:
TABLE 1
As can be seen from Table 1, FIG. 1 and FIG. 2, the surface roughness of palladium and copper polished by the chemical mechanical polishing solution with specific composition is low, and the two materials of palladium and copper can be taken into account, so that the removal amounts of the two materials are consistent, and the effect of global nanoscale planarization can be achieved.
Compared with application example 1, application examples 6-7 are the conditions that the mass ratio of the nano diamond to the complexing agent is out of a limit range, if the mass ratio is too low, the removal amount is not available, otherwise, the height difference between palladium and copper is caused to generate steps, and the surface roughness is higher.
Compared with the case of replacing nano diamond in application example 1, the polishing rate is slower and the roughness is higher; comparative application examples 2 to 3 are cases where the weight percentage of nanodiamond is out of a defined range; comparative application example 4 provides a silica polishing solution containing an oxidizing agent, which does not achieve the technical effect of the present application.
The applicant states that the process of the application is illustrated by the above examples, but the application is not limited to, i.e. does not mean that the application must be carried out in dependence on the above process steps. It should be apparent to those skilled in the art that any modification of the present application, equivalent substitution of selected raw materials, addition of auxiliary components, selection of specific modes, etc. fall within the scope of the present application and the scope of disclosure.
Claims (10)
1. The polishing solution for the chemical mechanical polishing of palladium and copper is characterized by comprising the following components in percentage by weight:
2. the polishing liquid for palladium and copper chemical mechanical polishing according to claim 1, wherein the polishing liquid for palladium and copper chemical mechanical polishing is composed of the following components in percentage by weight:
3. polishing liquid for palladium and copper chemical mechanical polishing according to claim 1 or 2, characterized in that the particle size distribution of the nanodiamond is 10 to 100nm, preferably 20 to 80nm;
preferably, the average particle size of the nanodiamond is 60nm, preferably 50nm;
preferably, the complexing agent comprises any one or a combination of at least two of ethylenediamine tetraacetic acid, ethylenediamine, malonic acid or oxalic acid.
4. The polishing liquid for chemical mechanical polishing of palladium and copper according to any one of claims 1 to 3, wherein the corrosion inhibitor comprises any one of or a combination of at least two of benzotriazol, 5-phenyltetrazol, or mercaptophenyltetrazol;
preferably, the pH adjuster comprises any one or a combination of at least two of sodium chloride solution, ammonium acetate or potassium nitrate.
5. The polishing liquid for chemical mechanical polishing of palladium and copper according to any one of claims 1 to 4, wherein the mass ratio of the nanodiamond to the complexing agent is (0.5 to 1): 1.
6. A method of preparing the polishing liquid for palladium and copper chemical mechanical polishing according to any one of claims 1 to 5, characterized by comprising the steps of:
and (3) mixing the complexing agent, the corrosion inhibitor and deionized water for the first time to obtain a first mixed solution, then mixing the first mixed solution and the nano diamond for the second time to obtain a second mixed solution, adding a pH regulator, and then adjusting the pH value of the system to obtain the polishing solution for the chemical mechanical polishing of palladium and copper.
7. The method of claim 6, wherein the pH of the conditioning system is 6.95.
8. A method of using the polishing liquid for palladium and copper chemical mechanical polishing according to any one of claims 1 to 5, comprising: the polishing solution for the chemical mechanical polishing of palladium and copper is subjected to chemical mechanical polishing.
9. The method of claim 8, wherein the chemical mechanical polishing is performed at a pressure of 2psi, a time of 30 minutes, and a rotational speed of 70rpm.
10. The method of use according to claim 8 or 9, wherein the polishing liquid for use in the chemical mechanical polishing of palladium and copper is used in an amount of 3mL/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310555181.3A CN116590711A (en) | 2023-05-17 | 2023-05-17 | Polishing solution for palladium and copper chemical mechanical polishing and preparation method and application method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310555181.3A CN116590711A (en) | 2023-05-17 | 2023-05-17 | Polishing solution for palladium and copper chemical mechanical polishing and preparation method and application method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN116590711A true CN116590711A (en) | 2023-08-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310555181.3A Pending CN116590711A (en) | 2023-05-17 | 2023-05-17 | Polishing solution for palladium and copper chemical mechanical polishing and preparation method and application method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116590711A (en) |
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- 2023-05-17 CN CN202310555181.3A patent/CN116590711A/en active Pending
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