CN116582107A - Radio frequency and millimeter wave active vector modulation type phase shifter - Google Patents
Radio frequency and millimeter wave active vector modulation type phase shifter Download PDFInfo
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- CN116582107A CN116582107A CN202310576626.6A CN202310576626A CN116582107A CN 116582107 A CN116582107 A CN 116582107A CN 202310576626 A CN202310576626 A CN 202310576626A CN 116582107 A CN116582107 A CN 116582107A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H11/00—Networks using active elements
- H03H11/02—Multiple-port networks
- H03H11/16—Networks for phase shifting
- H03H11/20—Two-port phase shifters providing an adjustable phase shift
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The application discloses a radio frequency and millimeter wave active vector modulation type phase shifter. Two paths of differential signals V output by a common source amplifying circuit in the application IP2 、V IN2 And V QP2 、V QN2 Respectively generating two paths of orthogonal differential signals V by phase shifting through an I path passive network and a Q path passive network IP3 、V IN3 And V QP3 、V QN3 The method comprises the steps of carrying out a first treatment on the surface of the Quadrature differential signal V IP3 、V IN3 And V QP3 、V QN3 And after the amplitude is adjusted through the I-path common-gate transistor array and the Q-path common-gate transistor array, the amplitude is synthesized into a group of differential signals VP and VN through a common-gate amplifying circuit, and the group of differential signals are input into the output matching network. The quadrature signal generating circuit is arranged at the intermediate node between the common source amplifying circuit and the common gate amplifying circuit, and compared with the traditional vector modulator architecture, the quadrature signal generating circuit has smaller insertion loss, thereby reducing the power consumption.
Description
Technical Field
The application relates to the technical field of integrated circuits, in particular to a radio frequency and millimeter wave active vector modulation type phase shifter.
Background
With the continuous development of integrated circuit production processes, a phased array system adopting a complementary metal oxide semiconductor process realizes high integration level and low cost, and is widely applied to the fields of automobile radar, satellite communication, millimeter wave imaging, short-distance high-speed wireless communication and the like. The phase shifter is a key component module of the front end of the phased array, and mainly comprises two types of implementation modes of a passive structure and an active structure; active phase shifters are generally referred to as vector modulation phase shifters, which can naturally achieve a 360 ° phase shift range by interpolation methods, with high phase shift accuracy and small phase shift added amplitude errors. The active vector modulation phase shifter has the advantages of high integration level and compact area, but also faces the problems of high noise coefficient and low energy efficiency.
Conventional active vector modulation phase shifters employ quadrature all-pass filters or RC polyphase filters to generate quadrature reference signals. The filters that generate the reference signal typically drive quadrature two-way radio frequency amplification and amplitude modulation circuits whose loading effects introduced by parasitic parameters of the common source input transistors can degrade the insertion loss and amplitude phase accuracy of the filters. To mitigate the loading effect, the common-source input transistor has a smaller size and a lower transconductance, which constrains the noise performance of the phase shifter; also, the noise performance of the phase shifter is further deteriorated by the large energy reflection due to the general lack of an impedance matching network between the filter and the common source input transistor.
Disclosure of Invention
The application aims to provide an active vector modulation phase shifter which works in radio frequency and millimeter wave frequency bands and has low noise coefficient and high energy efficiency.
In order to solve the technical problems, the application adopts a technical scheme that:
the application comprises an input matching network, an I-path common source amplifying circuit, a Q-path common source amplifying circuit, an I-path passive network, a Q-path passive network, an I-path common gate transistor array, a Q-path common gate transistor array, a common gate amplifying circuit and an output matching network; wherein:
the input matching network is respectively connected with the I-path common source amplifying circuit and the Q-path common source amplifying circuit through signals;
two paths of differential signals V output by the I path common source amplifying circuit IP2 、V IN2 Phase shifting via I-path passive network to generate two-path orthogonal differential signal V IP3 、V IN3 ；
Two paths of differential signals V output by the Q paths of common source amplifying circuits QP2 、V QN2 Phase-shifting by Q-path passive network to generate two-path orthogonal differential signal V QP3 、V QN3 ；
The orthogonal differential signal V IP3 、V IN3 And V QP3 、V QN3 And after the amplitude is adjusted through the I-path common-gate transistor array and the Q-path common-gate transistor array, the amplitude is synthesized into a group of differential signals VP and VN through a common-gate amplifying circuit, and the group of differential signals are input into the output matching network.
The beneficial effects of the application are as follows:
first, the quadrature signal generation circuit is arranged at the intermediate node between the common source amplifying circuit and the common gate amplifying circuit, so that the insertion loss is smaller compared with the traditional vector modulator architecture, and the power consumption is reduced.
Second, the application uses the first-stage amplifier to realize the complete phase shift function, so that the power consumption is effectively reduced.
Third, the application adopts the common source amplifying circuit, and the power gain of the common source amplifying circuit is used for inhibiting the noise coefficient of the passive network, so that the phase shifter has good noise performance.
Drawings
FIG. 1 is a schematic circuit diagram of a radio frequency and millimeter wave active vector modulation phase shifter according to the present application;
FIG. 2 is a simulation result of the phase shifting performance of the radio frequency and millimeter wave active vector modulation phase shifter in the frequency band of 27-32 GHz;
FIG. 3 is a simulation result of the root mean square phase shift error of the radio frequency and millimeter wave active vector modulation phase shifter in the frequency band of 27-32 GHz;
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the following detailed description of the embodiments of the present application will be given with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the application shown in the drawings and described in accordance with the drawings are merely exemplary and the application is not limited to these embodiments.
It should be noted here that, in order to avoid obscuring the present application due to unnecessary details, only structures and/or processing steps closely related to the solution according to the present application are shown in the drawings, while other details not greatly related to the present application are omitted.
And, in the description of the present application, the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Conventional quadrature signal generation circuits based on quadrature all-pass filters are essentially transmitting voltage signals, which impairs signal power. The passive network generating the orthogonal differential signals is arranged at the middle low-impedance node of the common-source common-gate amplifier, and the output impedance of the passive network is adjusted to realize conjugate matching with the input impedance of the common-gate amplifier, so that the phase shifter can effectively transmit the signals output by the passive network to the common-gate amplifying circuit, and the insertion loss is reduced; by placing the common source amplification circuit before the passive network that generates the quadrature differential signal, the noise figure of the passive network is suppressed by the power gain of the common source amplification circuit.
As shown in fig. 1, the radio frequency and millimeter wave active vector modulation type phase shifter provided by the application comprises an input matching network, an I-path common source amplifying circuit, a Q-path common source amplifying circuit, an I-path passive network, a Q-path passive network, an I-path common gate transistor array, a Q-path common gate transistor array, a common gate amplifying circuit and an output matching network.
Two paths of differential signals V output by a common source amplifying circuit IP2 、V IN2 And V QP2 、V QN2 Respectively generating two paths of orthogonal differential signals V by phase shifting through an I path passive network and a Q path passive network IP3 、V IN3 And V QP3 、V QN3 The method comprises the steps of carrying out a first treatment on the surface of the Quadrature differential signal V IP3 、V IN3 And V QP3 、V QN3 The amplitude is adjusted by the I-path common-gate transistor array and the Q-path common-gate transistor array respectively, and then the amplitude is synthesized into a group of differential signals V through a common-gate amplifying circuit P 、V N The method comprises the steps of carrying out a first treatment on the surface of the After passing through the common gate amplifying circuit, the direct current provided by the power interface VDD of the output matching network flows through two paths to the chip ground respectively, wherein one path is an I path common gate transistor array, an I path passive network and an I path common source amplifying circuit, and the other path is a Q path common gate transistor array, a Q path passive network and a Q path common source amplifying circuit.
In an embodiment of the application, the input matching network comprises an on-chip transformer xfmr 1 And xfmr 2 The on-chip transformer xfmr 1 、xfmr 2 One end of the primary coil of the (B) is connected with the positive end IP of the radio frequency input port of the phase shifter, the other end is connected with the negative end IN of the radio frequency input port of the phase shifter, and the on-chip transformer xfmr is connected with the power supply 1 And xfmr 2 The center taps of the secondary coils of (2) are respectively connected with V G1 And V G2 On-chip transformer xfmr 1 One end of the secondary coil of the transformer is connected with the positive end V of the first group of differential signals of the I path IP1 The other end is connected with the negative terminal V of the first group of differential signals of the I path IN1 On-chip transformer xfmr 2 Secondary of (2)One end of the stage coil is connected with Q paths of positive ends V of first group of differential signals QP1 The other end is connected with the negative terminal V of the Q-path first group differential signal QN1 。
In an embodiment of the present application, the common source amplifying circuit includes a transistor M a1 、M a2 、M a3 、M a4 On-chip capacitor C a1 、C a2 、C a3 、C a4 Transistor M a1 Grid and on-chip capacitor C a2 Is connected to one end of the I-path first group differential signal positive terminal V IP1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a1 Is connected to the positive terminal V of the I-path second group differential signal IP2 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M a2 Grid and on-chip capacitor C a1 Is connected to the negative terminal V of the first differential signal of the I-path IN1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a2 Is connected to the negative terminal V of the I-path second group differential signal IN2 . Transistor M a3 Grid and on-chip capacitor C a4 Is connected to the positive terminal V of the Q-way first group differential signal QP1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a3 Is connected to the positive terminal V of the Q-way second group differential signal QP2 The method comprises the steps of carrying out a first treatment on the surface of the Transistor M a4 Grid and on-chip capacitor C a3 Is connected to the negative terminal V of the Q-way first group differential signal QN1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a4 Is connected to the negative terminal V of the Q-way second set of differential signals QN2 . The common source amplifying circuit structure with the neutralization capacitor has lower noise coefficient, and the existence of the neutralization capacitor increases reverse isolation and improves the stability of the circuit.
In an embodiment of the present application, the I-path passive network includes an on-chip inductor L b1 、L b2 On-chip capacitor C b1 、C b2 On-chip capacitor C b1 One end of (2) and on-chip inductance L b1 Is connected to the positive terminal V of the I-path second group differential signal IP2 The other end is connected with an on-chip inductor L b2 Is connected to the positive terminal V of the third set of differential signals of the I-path IP3 The method comprises the steps of carrying out a first treatment on the surface of the SheetUpper capacitor C b2 One end of (2) and on-chip inductance L b1 Is connected to the negative terminal V of the I-way second set of differential signals IN2 The other end is connected with an on-chip inductor L b2 Is connected to the negative terminal V of the third set of differential signals of the I-path IN3 The method comprises the steps of carrying out a first treatment on the surface of the On-chip inductance L b1 Center tap and on-chip inductance L of (1) b2 Is connected with the center tap of the transformer. The Q-way passive network comprises an on-chip inductor L b3 、L b4 On-chip capacitor C b3 、C b4 On-chip capacitor C b3 One end of (2) and on-chip inductance L b3 Positive terminal V connected to Q-way second group differential signal QP2 The other end is connected with an on-chip inductor L b4 Is connected to the negative terminal V of the second set of Q differential signals QN2 The method comprises the steps of carrying out a first treatment on the surface of the On-chip capacitor C b4 One end of (2) and on-chip inductance L b3 The other end of the third group of Q differential signals is connected with the positive end V of the third group of Q differential signals QP3 The other end is connected with an on-chip inductor L b4 Is connected to the negative terminal V of the third set of Q differential signals QN3 . The two adopted passive networks are respectively a high-pass passive network and a low-pass passive network, and signals with the same phase can generate a phase difference of 90 degrees after passing through the passive networks, namely a pair of quadrature signals.
In the embodiment of the application, the I-path common-gate transistor array and the Q-path common-gate transistor array have the same structure, are respectively formed by connecting 5 common-gate transistor array units in parallel, and are modules for realizing phase interpolation. The number of transistor array units is 5, so that the phase shift accuracy of 5.625 ° can be satisfied, and more transistor array units can be connected in parallel if higher accuracy is required.
In an embodiment of the present application, the I-way cascode transistor array unit includes a transistor M c1 、M c2 、M c3 、M c4 Inverter I 1 、I 2 Transistor M c1 、M c2 、M c3 、M c4 Is the same size. Said transistor M c1 And transistor M c2 Is connected to the positive terminal V of the I-path third group differential signal IP3 Said transistor M c3 And transistor M c4 Is connected to the source of the third group I differentialNegative terminal V of the divided signal IN3 Said transistor M c1 And transistor M c4 Gate connected inverter I 1 The output terminal of the transistor M c2 And transistor M c3 Gate connected inverter I 2 Output of (d) and inverter I 1 Is the input terminal of the transistor M c1 And transistor M c3 The drains of the fourth group of differential signals are connected as positive terminal V of I path IP4 Signal, the transistor M c2 And transistor M c4 The drain electrode of the fourth group of differential signals is connected as the negative terminal V of the I-path IN4 A signal.
In an embodiment of the present application, the common gate amplifying circuit includes a transistor M d1 、M d2 Said transistor M d1 And transistor M d2 Is connected to V G3 The transistor M d1 And source electrode of AND and I-path fourth group differential signal positive terminal V IP4 Q paths of differential signal positive terminal V QP4 Connected with the drain electrode to the positive terminal V of the differential signal P The method comprises the steps of carrying out a first treatment on the surface of the The transistor M d2 And source electrode of AND and I-path fourth group differential signal negative terminal V IN4 Q-way differential signal negative terminal V QN4 Connected with drain electrode connected to negative terminal V of differential signal N . I. The Q two paths of signals are synthesized through the common gate amplifying circuit, so that the subsequent output is facilitated.
In an embodiment of the application, the output matching network comprises an on-chip transformer xfmr 3 The on-chip transformer xfmr 3 One end of the primary coil of (2) is connected to the positive end V of the differential signal P The other end is connected to the negative terminal V of the differential signal N The center tap is connected to the power supply VDD, the on-chip transformer xfmr 3 One end of the secondary coil of the (b) is connected to the positive end OP of the radio frequency output port, and the other end is connected to the negative end ON of the radio frequency output port. On-chip transformer xfmr 3 The power supply can be provided to the whole circuit through the center tap of the primary coil while the output matching function is realized.
Fig. 2 shows the phase shift simulation result of the phase shifter, which can realize phase shift with 360-degree range and 6-bit precision in the frequency band of 27-32 GHz, and the phase states are not overlapped.
FIG. 3 shows the results of simulation of phase shift errors of the phase shifter of the present application, in the frequency band of 27-32 GHz, the Root Mean Square (RMS) error of the phase shift is less than 3.5 DEG, and in the frequency band of 27.5-31 GHz, the error value is less than 2 deg.
Furthermore, it should be noted that, in this specification, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
It should be understood that although the present disclosure describes embodiments, not every embodiment is provided with a separate embodiment, and that this description is provided for clarity only, and that the disclosure is not limited to specific embodiments, and that the embodiments may be combined appropriately to form other embodiments that will be understood by those skilled in the art.
Claims (10)
1. A radio frequency and millimeter wave active vector modulation phase shifter, characterized by:
the circuit comprises an input matching network, an I-path common source amplifying circuit, a Q-path common source amplifying circuit, an I-path passive network, a Q-path passive network, an I-path common gate transistor array, a Q-path common gate transistor array, a common gate amplifying circuit and an output matching network; wherein:
the input matching network is respectively connected with the I-path common source amplifying circuit and the Q-path common source amplifying circuit through signals;
two paths of differential signals V output by the I path common source amplifying circuit IP2 、V IN2 Phase shifting via I-path passive network to generate two-path orthogonal differential signal V IP3 、V IN3 ；
Two paths of differential signals V output by the Q paths of common source amplifying circuits QP2 、V QN2 Phase-shifting by Q-path passive network to generate two-path orthogonal differential signal V QP3 、V QN3 ；
The orthogonal differential signal V IP3 、V IN3 And V QP3 、V QN3 And after the amplitude is adjusted through the I-path common-gate transistor array and the Q-path common-gate transistor array, the amplitude is synthesized into a group of differential signals VP and VN through a common-gate amplifying circuit, and the group of differential signals are input into the output matching network.
2. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the input matching circuit comprises an on-chip transformer xfmr 1 And xfmr 2 ；
The on-chip transformer xfmr 1 、xfmr 2 One end of the primary coil of the phase shifter is connected with the positive end IP of the radio frequency input port of the phase shifter, and the other end of the primary coil of the phase shifter is connected with the negative end IN of the radio frequency input port of the phase shifter; on-chip transformer xfmr 1 And xfmr 2 The center taps of the secondary coils of (2) are respectively connected with V G1 And V G2 ；
On-chip transformer xfmr 1 One end of the secondary coil of the transformer is connected with the positive end V of the first group of differential signals of the I path IP1 The other end is connected with the negative terminal V of the first group of differential signals of the I path IN1 On-chip transformer xfmr 2 One end of the secondary coil of the (B) is connected with Q paths of positive ends V of a first group of differential signals QP1 The other end is connected with the negative terminal V of the Q-path first group differential signal QN1 。
3. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 2, wherein:
the I-path common source amplifying circuit is composed of a transistor M a1 、M a2 Sum of on-chip capacitance C a1 、C a2 Composition; the Q-path common source amplifying circuit is composed of a transistor M a3 、M a4 Sum of on-chip capacitance C a3 、C a4 Composition;
the transistor M a1 Grid and on-chip capacitor C a2 Is connected to one end of the I-path first group differential signal positive terminal V IP1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a1 Is connected to the positive terminal V of the I-path second group differential signal IP2 ；
The transistor M a2 Grid and on-chip capacitor C a1 Is connected to the negative terminal V of the first differential signal of the I-path IN1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a2 Is connected to the negative terminal V of the I-path second group differential signal IN2 ；
The transistor M a3 Grid and on-chip capacitor C a4 Is connected to the positive terminal V of the Q-way first group differential signal QP1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a3 Is connected to the positive terminal V of the Q-way second group differential signal QP2 ；
The transistor M a4 Grid and on-chip capacitor C a3 Is connected to the negative terminal V of the Q-way first group differential signal QN1 The source electrode is grounded, and the drain electrode and the on-chip capacitor C a4 Is connected to the negative terminal V of the Q-way second set of differential signals QN2 。
4. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the I-path passive network comprises an on-chip inductor L b1 、L b2 On-chip capacitor C b1 、C b2 ；
The on-chip capacitor C b1 One end of (2) and on-chip inductance L b1 Is connected to the positive terminal V of the I-path second group differential signal IP2 The other end is connected with an on-chip inductor L b2 Is connected to the positive terminal V of the third set of differential signals of the I-path IP3 ；
The on-chip capacitor C b2 One end of (2) and on-chip inductance L b1 Is connected to the negative terminal V of the I-way second set of differential signals IN2 The other end and the on-chip inductorL b2 Is connected to the negative terminal V of the third set of differential signals of the I-path IN3 ；
The on-chip inductance L b1 Center tap and on-chip inductance L of (1) b2 Is connected with the center tap of the transformer.
5. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the Q-path passive network comprises an on-chip inductor L b3 、L b4 On-chip capacitor C b3 、C b4 ；
The on-chip capacitor C b3 One end of (2) and on-chip inductance L b3 Is connected to the positive terminal V of the second group of Q differential signals QP2 The other end is connected with an on-chip inductor L b4 Is connected to the negative terminal V of the second set of Q differential signals QN2 ；
The on-chip capacitor C b4 One end of (2) and on-chip inductance L b3 The other end of the third group of Q differential signals is connected with the positive end V of the third group of Q differential signals QP3 The other end is connected with an on-chip inductor L b4 Is connected to the negative terminal V of the third set of Q differential signals QN3 。
6. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the I-path common-gate transistor array is formed by connecting a plurality of common-gate transistor array units in parallel.
7. The radio frequency and millimeter wave active vector modulation phase shifter of claim 6, wherein:
the I-path common gate transistor array unit consists of a transistor M c1 、M c2 、M c3 、M c4 And inverter I 1 、I 2 Composition; the Q-way common gate transistor array is composed of a transistor M c5 、M c6 、M c7 、M c8 And inverter I 3 、I 4 Composition;
said transistor M c1 And transistor M c2 Is connected to the positive terminal V of the I-path third group differential signal IP3 Said transistor M c3 And transistor M c4 Is connected to the negative terminal V of the I-way third set of differential signals IN3 Said transistor M c1 And transistor M c4 Gate connected inverter I 1 The output terminal of the transistor M c2 And transistor M c3 Gate connected inverter I 2 Output of (d) and inverter I 1 Is the input terminal of the transistor M c1 And transistor M c3 The drains of the fourth group of differential signals are connected as positive terminal V of I path IP4 Signal, the transistor M c2 And transistor M c4 The drain electrode of the fourth group of differential signals is connected as the negative terminal V of the I-path IN4 A signal.
8. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 6 or 7, characterized by: the transistor M of the I-path common gate transistor array unit c1 、M c2 、M c3 And M c4 Is the same in size; the Q-path common gate transistor array structure is the same as the I-path common gate transistor array structure.
9. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the common gate amplifying circuit comprises a transistor M d1 、M d2 Said transistor M d1 And transistor M d2 Is connected to V G3 ；
The transistor M d1 And source electrode of AND and I-path fourth group differential signal positive terminal V IP4 Q paths of differential signal positive terminal V QP4 Connected with the drain electrode to the positive terminal V of the differential signal P ；
The transistor M d2 And source electrode of AND and I-path fourth group differential signal negative terminal V IN4 Q-way differential signal negative terminal V QN4 Connected with drain electrode connected with negative terminal of differential signalV N 。
10. A radio frequency and millimeter wave active vector modulation phase shifter according to claim 1, wherein:
the output matching network comprises an on-chip transformer xfmr 3 The on-chip transformer xfmr 3 One end of the primary coil of (2) is connected to the positive end V of the differential signal P The other end is connected to the negative terminal V of the differential signal N The center tap is connected to the power supply VDD; the on-chip transformer xfmr 3 One end of the secondary coil of the (b) is connected to the positive end OP of the radio frequency output port, and the other end is connected to the negative end ON of the radio frequency output port;
the direct current provided by a power interface VDD of the output matching network flows through two paths to the chip ground after passing through the common gate amplifying circuit, wherein one path is an I path common gate transistor array, an I path passive network and an I path common source amplifying circuit; the other path is a Q path common grid transistor array, a Q path passive network and a Q path common source amplifying circuit.
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