CN116577968A - Overlay accuracy correction method based on bearing table - Google Patents

Overlay accuracy correction method based on bearing table Download PDF

Info

Publication number
CN116577968A
CN116577968A CN202310580502.5A CN202310580502A CN116577968A CN 116577968 A CN116577968 A CN 116577968A CN 202310580502 A CN202310580502 A CN 202310580502A CN 116577968 A CN116577968 A CN 116577968A
Authority
CN
China
Prior art keywords
overlay accuracy
substrate
historical
bearing table
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310580502.5A
Other languages
Chinese (zh)
Inventor
袁海文
尹鹏腾
秦利鹏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shanghai Huali Microelectronics Corp
Original Assignee
Shanghai Huali Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Huali Microelectronics Corp filed Critical Shanghai Huali Microelectronics Corp
Priority to CN202310580502.5A priority Critical patent/CN116577968A/en
Publication of CN116577968A publication Critical patent/CN116577968A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70783—Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The application provides an overlay accuracy correction method based on a bearing table, which comprises the following steps: acquiring historical warp data of the surface of the bearing table and historical alignment precision data of a corresponding substrate after photoetching on the bearing table; constructing a mapping relation between the historical warp data and the historical overlay accuracy data, wherein the mapping relation comprises the steps of obtaining different overlay accuracy in different areas of the substrate by the warp of the bearing table; detecting the warping degree of the bearing table, obtaining the prediction overlay accuracy of different areas of the substrate arranged on the bearing table according to the mapping relation, and selecting corresponding overlay accuracy compensation on different areas of the substrate based on the preset overlay accuracy. According to the application, the overlay accuracy compensation is carried out on different areas of the substrate during the photoetching process by detecting the warpage of the bearing table and utilizing the mapping relation, so that the overlay accuracy during the photoetching process is improved, the service life of the objective table is prolonged relatively, the cost is reduced, and the utilization rate of the machine table is improved.

Description

Overlay accuracy correction method based on bearing table
Technical Field
The application relates to the technical field of semiconductors, in particular to an overlay accuracy correction method based on a bearing table.
Background
Overlay accuracy refers to overlay accuracy of a layer pattern and a front layer pattern in a photoetching manufacturing process, is one of key parameters for measuring the photoetching process, and along with the improvement of a product manufacturing process, the requirements of devices on overlay accuracy between different layers are higher.
Wherein the carrier stage is used for carrying the substrate in a lithographic process (exposure process). In the exposure process, certain warpage gradually appears at the edge of the bearing table, so that similar warpage correspondingly appears on the substrate adsorbed on the bearing table, the warpage can cause difference in alignment precision after the substrate is exposed, a light person generates poor focusing, and a certain yield loss is caused by heavy person, namely, the bearing table is used as a 'consumable', and the service life of the bearing table is limited.
At present, a bearing table with a short service life is generally replaced directly so as to ensure the photoetching yield, but frequent replacement of the bearing table is not only when the machine is consumed, but also is unfavorable for reducing the cost.
Disclosure of Invention
The application aims to provide an overlay accuracy correction method based on a bearing table, which prolongs the service life of the bearing table.
In order to solve the technical problems, the alignment precision correction method based on the bearing table provided by the application comprises the following steps:
acquiring historical warp data of the surface of a bearing table and historical alignment precision data of a substrate subjected to photoetching on the bearing table, wherein the historical alignment precision data corresponds to the historical warp data;
constructing a mapping relation between the historical warp data and the historical overlay accuracy data, wherein the mapping relation comprises different overlay accuracy obtained from different areas of the substrate by the warp of the bearing table;
detecting the warping degree of the bearing table, obtaining the predicted overlay accuracy of different areas of the substrate arranged on the bearing table according to the mapping relation, and selecting corresponding overlay accuracy compensation on different areas of the substrate based on the preset overlay accuracy.
Optionally, the historical overlay accuracy data of the substrate corresponding to the historical warp data after being subjected to photoetching on the bearing table includes overlay accuracy data of each at least two substrates passing through the bearing table before and after the measurement of the historical warp data.
Optionally, the historical overlay accuracy data is an overlay accuracy obtained by first-order linear compensation.
Optionally, a least square method is adopted to fit the historical warp data and the historical overlay accuracy data so as to obtain the mapping relation.
Optionally, the widths of the different annular regions on the substrate and the overlay accuracy of the different annular regions are obtained by using the warpage of the bearing table according to the mapping relation.
Optionally, after the mapping relationship is obtained, an overlay accuracy compensation relationship is also established, and a compensation mode matched with the overlay accuracy is obtained by using the overlay accuracy compensation relationship according to the overlay accuracy.
Optionally, the compensation mode includes a first order linear compensation mode and a higher order nonlinear compensation mode.
Optionally, the substrate is circular, the warp degree of plummer surface is greater than first default and is less than the second default, the surface of substrate is divided into a central region and encircle the N annular region that the central region set up, first through N annular region follow the center of substrate is towards the edge concentric setting in proper order, the substrate is in first through N annular region have different alignment precision, N is greater than or equal to 1's integer.
Optionally, a first order linear compensation mode is adopted for the central region, and a high order nonlinear compensation mode is adopted for the first to N annular regions.
Optionally, the warp of the surface of the bearing table is smaller than or equal to a first preset value, and a first-order linear compensation mode is adopted for the substrate.
In summary, the application constructs the mapping relation by obtaining the historical warp data of the surface of the bearing table and the corresponding historical overlay accuracy data, obtains the overlay accuracy of different areas of the substrate from the warp of the bearing table by using the mapping relation, then detects the warp of the bearing table, obtains the predicted overlay accuracy of the substrate on the bearing table in different areas according to the mapping relation, selects the corresponding overlay accuracy compensation for different areas of the substrate when the photoetching process is executed based on the preset overlay accuracy, not only improves the overlay accuracy in the photoetching process, but also ensures the overlay accuracy through the corresponding overlay accuracy compensation when the warp of the object table slightly exceeds the standard, thereby prolonging the service life of the object table relatively, reducing the cost and improving the utilization rate of the machine.
Drawings
It will be appreciated by those skilled in the art that the drawings are provided for a better understanding of the application and do not constitute any limitation on the scope of the application.
Fig. 1 is a flowchart of an overlay accuracy correction method based on a bearing table according to an embodiment of the present application.
Detailed Description
The application will be described in further detail with reference to the drawings and the specific embodiments thereof in order to make the objects, advantages and features of the application more apparent. It should be noted that the drawings are in a very simplified form and are not drawn to scale, merely for convenience and clarity in aiding in the description of embodiments of the application. Furthermore, the structures shown in the drawings are often part of actual structures. In particular, the drawings are shown with different emphasis instead being placed upon illustrating the various embodiments.
As used in this disclosure, the singular forms "a," "an," and "the" include plural referents, the term "or" are generally used in the sense of comprising "and/or" and the term "several" are generally used in the sense of comprising "at least one," the term "at least two" are generally used in the sense of comprising "two or more," and the term "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying any relative importance or number of features indicated. Thus, a feature defining "a first", "a second", and "a third" may include one or at least two of the feature, either explicitly or implicitly, unless the context clearly dictates otherwise.
Fig. 1 is a flowchart of an overlay accuracy correction method based on a bearing table according to an embodiment of the present application.
As shown in fig. 1, the alignment accuracy correction method based on the bearing table provided in this embodiment includes:
s01: acquiring historical warp data of the surface of a bearing table and historical alignment precision data of a substrate subjected to photoetching on the bearing table, wherein the historical alignment precision data corresponds to the historical warp data;
s02: constructing a mapping relation between the historical warp data and the historical overlay accuracy data, wherein the mapping relation comprises different overlay accuracy obtained from different areas of the substrate by the warp of the bearing table;
s03: detecting the warping degree of the bearing table, obtaining the predicted overlay accuracy of different areas of the substrate arranged on the bearing table according to the mapping relation, and selecting corresponding overlay accuracy compensation on different areas of the substrate based on the preset overlay accuracy.
The photolithography machine for performing the photolithography process in this embodiment may be any suitable photolithography machine, such as a stepper or a scanning photolithography machine, and the substrate may be any suitable material, such as silicon, quartz, glass, or ceramic. The overlay accuracy correction method based on the bearing table will be described in detail with reference to fig. 1.
Firstly, step S01 is executed to obtain historical warp data of the surface of the carrier and historical overlay accuracy data of the substrate corresponding to the historical warp data after being subjected to photoetching on the carrier.
Different warping data of the surface of the bearing table are obtained from historical point detection data of the photoetching machine object table, and overlay accuracy data of at least two substrates before and after corresponding measurement time points are obtained from overlay accuracy measurement data of the substrates according to time points (measurement time points) for measuring the warping degree of the object table; and calculating an average value of the overlay accuracy of at least two substrates obtained at the measurement time point to obtain overlay accuracy data of the measurement time point. Of course, before the average value is obtained, the abnormal value in the overlay accuracy data can be removed, so that the reliability of the data is improved.
In addition, in some examples, as much overlay accuracy data as possible may be collected for all exposed areas of the substrate before and after the stage's warp measure time point to specifically accumulate historical overlay accuracy data for subsequent construction of the map.
Next, step S02 is executed to construct a mapping relationship between the historical warp data and the historical overlay accuracy data, where the mapping relationship includes obtaining different overlay accuracy in different areas of the substrate by the warp of the bearing platform.
The historical overlay accuracy data may include overlay accuracy distributed over each exposed area of the substrate, i.e., overlay accuracy data including the entire (near) surface of the substrate. If the substrate is regarded as having a uniform thickness, the substrate is adsorbed on the stage, and the surface warpage of the substrate may be approximated to the warpage of the stage surface. At the center of the substrate, the warpage height is smaller (may be approximately 0), and the warpage height gradually increases from the center of the substrate to the edge of the substrate, so it can be understood that if the photolithography process is performed with the overlay accuracy requirement of the middle region of the substrate, the overlay accuracy gradually decreases from the center of the substrate to the edge of the substrate, in other words, the overlay accuracy requirement corresponding to the overlay accuracy requirement gradually increases from the center of the substrate to the edge of the substrate. Therefore, in this embodiment, according to the warp heights of different regions of the stage, that is, the overlay accuracy requirements of different regions, corresponding overlay accuracy compensation is performed by establishing a mapping relationship, so as to improve the overlay accuracy during photolithography.
Taking the substrate and the objective table as round examples, the surface of the substrate can be divided into a central region and N annular regions surrounding the central region similar to the warpage heights of different regions of the objective table, the first to N annular regions are sequentially and concentrically arranged from the center of the substrate to the edge of the substrate, the substrate has different alignment precision (namely, alignment precision requirement) in the first to N annular regions, and N is an integer greater than or equal to 1. The overlay accuracy data of the substrate may include the overlay accuracy and the corresponding width (ring width) of the first to nth annular regions, and in practice, the overlay accuracy and the width representation of the nth annular region (the edge-most annular region) may be preferable for easy calculation.
Specifically, a least square method can be adopted to fit each historical warp data and the corresponding historical overlay accuracy data so as to construct and obtain a mapping relation between the historical warp data and the corresponding historical overlay accuracy data, and the corresponding overlay accuracy data at least comprises the overlay accuracy and the width of the Nth annular region by utilizing the mapping relation.
In addition, an overlay accuracy compensation relation is also established, and a compensation mode matched with the overlay accuracy is obtained by utilizing the overlay accuracy compensation relation according to the overlay accuracy, namely, the compensation mode corresponding to the overlay accuracy is provided according to the overlay accuracy of different areas of the substrate so as to meet the overlay accuracy requirement. The provided compensation modes include a first order linear compensation mode and a higher order nonlinear compensation mode, which may include, for example, a third order nonlinear compensation, a fifth order nonlinear compensation, and the like. In one example, a first order linear compensation mode may be employed for the central region of the substrate and corresponding higher order nonlinear compensation modes may be employed for the first through nth annular regions.
It should be noted that, as the photolithography process continues, the warpage of the bearing table also gradually increases, and if the warpage of the surface of the bearing table is smaller than or equal to the first preset value, a first-order linear compensation mode may be adopted for the substrate to simplify the arrangement and improve the execution efficiency; if the warping degree of the surface of the bearing platform is larger than a first preset value and smaller than a second preset value (the second preset value is larger than the first preset value), the method of adopting a first-order linear compensation mode or a high-order nonlinear compensation mode to compensate different areas can be adopted respectively; if the warping degree of the surface of the bearing table is larger than or equal to a second preset value, the fact that the warping degree of the bearing table exceeds the compensation range of the overlay accuracy is indicated, and the bearing table needs to be replaced. The first preset value may be a warp degree when the service life of the design of the bearing platform expires, and the second preset value may be a maximum warp degree that can be compensated by adopting a high-order nonlinear compensation mode. In a specific example, taking a substrate with a diameter of 300mm as an example, the first preset value of the bearing table may be 100 micrometers, and the second preset value may be 110 micrometers, so it is easy to see that by adopting the alignment precision correction method provided by the embodiment, the service life of the bearing table can be prolonged from 100 micrometers to 110 micrometers, and the service life of the bearing table can be prolonged by about 10% -20%.
In addition, by adopting the overlay accuracy correction method provided by the embodiment, the overlay accuracy can be improved, the focusing failure can be reduced, and the yield loss can be reduced.
Then, step S03 is executed to detect the warpage of the carrier, obtain the predicted overlay accuracy of different areas of the substrate placed on the carrier according to the mapping relationship, and select corresponding overlay accuracy compensation on different areas of the substrate based on the preset overlay accuracy.
The warpage of the bearing table of the photoetching machine can be measured directly or indirectly, for example, an optical surface measuring instrument is used for directly measuring the warpage of the bearing table, or a standard substrate is placed on the objective table, and then a plurality of heights of the standard substrate in the vertical direction are detected to indirectly measure the warpage of the bearing table. It can be understood that the method for obtaining the warpage of the bearing platform can be the same as the method for obtaining the historical warpage data of the bearing platform, so as to improve the matching degree of the two.
After the warp of the objective table is obtained, the overlay accuracy corresponding to the warp, that is, the predicted overlay accuracy, including the overlay accuracy and the width of a plurality of annular regions (first to N-th annular regions) can be obtained by using the mapping relation between the constructed historical warp data and the historical overlay accuracy data.
After the overlay accuracy distribution of the first to N-th annular regions is obtained, respectively adopting corresponding overlay accuracy compensation modes for the first to N-th annular regions according to the established overlay accuracy compensation relation so as to meet the overlay accuracy requirements, and executing a photoetching process according to the overlay accuracy compensation modes, thereby achieving the effects of prolonging the service life of the bearing table and improving the overlay accuracy.
Of course, the photolithography process is performed with the corresponding overlay accuracy compensation selected from the predicted overlay accuracy, and overlay accuracy detection is performed on the substrate.
In summary, the application constructs the mapping relation by obtaining the historical warp data of the surface of the bearing table and the corresponding historical overlay accuracy data, obtains the overlay accuracy of different areas of the substrate from the warp of the bearing table by using the mapping relation, then detects the warp of the bearing table, obtains the predicted overlay accuracy of the substrate on the bearing table in different areas according to the mapping relation, selects the corresponding overlay accuracy compensation for different areas of the substrate when the photoetching process is executed based on the preset overlay accuracy, not only improves the overlay accuracy in the photoetching process, but also ensures the overlay accuracy through the corresponding overlay accuracy compensation when the warp of the object table slightly exceeds the standard, thereby prolonging the service life of the object table relatively, reducing the cost and improving the utilization rate of the machine.
The above description is only illustrative of the preferred embodiments of the present application and is not intended to limit the scope of the present application, and any alterations and modifications made by those skilled in the art based on the above disclosure shall fall within the scope of the appended claims.

Claims (10)

1. The method for correcting the overlay accuracy based on the bearing table is characterized by comprising the following steps of:
acquiring historical warp data of the surface of a bearing table and historical alignment precision data of a substrate subjected to photoetching on the bearing table, wherein the historical alignment precision data corresponds to the historical warp data;
constructing a mapping relation between the historical warp data and the historical overlay accuracy data, wherein the mapping relation comprises different overlay accuracy obtained from different areas of the substrate by the warp of the bearing table;
detecting the warping degree of the bearing table, obtaining the predicted overlay accuracy of different areas of the substrate arranged on the bearing table according to the mapping relation, and selecting corresponding overlay accuracy compensation on different areas of the substrate based on the preset overlay accuracy.
2. The method according to claim 1, wherein the historical overlay accuracy data of the substrate corresponding to the historical warp data after the substrate is lithographically processed on the stage includes overlay accuracy data of each at least two substrates passing through the stage before and after the measurement of the historical warp data.
3. The stage-based overlay accuracy correction method according to claim 2, wherein the historical overlay accuracy data is an overlay accuracy obtained by using first-order linear compensation.
4. The abutment precision correction method based on the carrier as set forth in claim 2 or 3, wherein the mapping relation is obtained by fitting the historical warp data and the historical alignment precision data by a least square method.
5. The alignment accuracy correction method based on the carrier according to claim 2, wherein the widths of the different annular regions on the substrate and the alignment accuracy of the different annular regions are obtained by using the warpage of the carrier according to the mapping relation.
6. The overlay accuracy correction method based on the bearing table according to claim 1, further comprising establishing an overlay accuracy compensation relationship after the mapping relationship is obtained, and obtaining a compensation mode matched with the overlay accuracy according to the overlay accuracy by using the overlay accuracy compensation relationship.
7. The stage-based overlay accuracy correction method according to claim 6, wherein the compensation modes include a first-order linear compensation mode and a higher-order nonlinear compensation mode.
8. The alignment accuracy correction method based on a carrier table according to claim 1, wherein the substrate is circular, the warpage of the surface of the carrier table is greater than a first preset value and less than a second preset value, the surface of the substrate is divided into a central region and N annular regions surrounding the central region, the first to nth annular regions are concentrically arranged in sequence from the center to the edge of the substrate, the substrate has different alignment accuracy in the first to nth annular regions, and N is an integer greater than or equal to 1.
9. The method according to claim 8, wherein a first order linear compensation mode is used for the center region and a higher order nonlinear compensation mode is used for the first to nth annular regions.
10. The alignment accuracy correction method based on a carrier according to claim 8, wherein the warpage of the surface of the carrier is less than or equal to the first preset value, and a first-order linear compensation mode is adopted for the substrate.
CN202310580502.5A 2023-05-22 2023-05-22 Overlay accuracy correction method based on bearing table Pending CN116577968A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310580502.5A CN116577968A (en) 2023-05-22 2023-05-22 Overlay accuracy correction method based on bearing table

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310580502.5A CN116577968A (en) 2023-05-22 2023-05-22 Overlay accuracy correction method based on bearing table

Publications (1)

Publication Number Publication Date
CN116577968A true CN116577968A (en) 2023-08-11

Family

ID=87537441

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310580502.5A Pending CN116577968A (en) 2023-05-22 2023-05-22 Overlay accuracy correction method based on bearing table

Country Status (1)

Country Link
CN (1) CN116577968A (en)

Similar Documents

Publication Publication Date Title
KR100758965B1 (en) Semiconductor wafer heat treating jig
US7760931B2 (en) Apparatus and method for measuring at least one of arrangement and shape of shots on substrate, exposure apparatus, and device manufacturing method
JP6285957B2 (en) Chuck used especially in mask aligner
US20060160037A1 (en) Automated sub-field blading for leveling optimization in lithography exposure tool
EP3005411B1 (en) Using wafer geometry to improve scanner correction effectiveness for overlay control
US20160163033A1 (en) Predicting and Controlling Critical Dimension Issues and Pattern Defectivity in Wafers Using Interferometry
CN110750038B (en) Mask plate, standard plate and alignment pattern error compensation method
JP3348918B2 (en) Alignment method, exposure method using the method, and device manufacturing method
CN114355732B (en) Measurement method for overlay error compensation precision
CN116577968A (en) Overlay accuracy correction method based on bearing table
JP5166916B2 (en) Apparatus for superimposing patterns and device manufacturing method
US7212286B2 (en) Aligning method, exposure method, exposure apparatus, and device manufacturing method
JP6253269B2 (en) Lithographic apparatus, lithographic method, and article manufacturing method using the same
US10409170B2 (en) Method for quickly establishing lithography process condition by a pre-compensation value
JP2003173966A (en) Method for measuring alignment of photolithographic step
CN111862076B (en) Method for improving bright field defect detection precision and noise caused by chromatic aberration in process of bright field defect detection precision
CN106597811B (en) Method for monitoring litho machine imaging plane exception
Tortonese et al. 100-nm-pitch standard characterization for metrology applications
CN117410199B (en) Overlay error measurement method
Yamaguchi et al. A study of high-accuracy stand-alone wafer metrology tool for high-productivity of exposure apparatus
KR100642483B1 (en) Method for detecting flatness of wafer chuck in exposure equipment
JP7212528B2 (en) Lithographic apparatus, metrology methods, and methods of manufacturing articles
JP2000260840A (en) Method and device for measuring semiconductor substrate
US20120070786A1 (en) Method for monitoring photolithography process and monitor mark
JP7330921B2 (en) Pattern inspection method and photomask making method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination