CN116577341B - Qualification detection method for diamond surface etching pits and related equipment - Google Patents

Qualification detection method for diamond surface etching pits and related equipment Download PDF

Info

Publication number
CN116577341B
CN116577341B CN202310829850.1A CN202310829850A CN116577341B CN 116577341 B CN116577341 B CN 116577341B CN 202310829850 A CN202310829850 A CN 202310829850A CN 116577341 B CN116577341 B CN 116577341B
Authority
CN
China
Prior art keywords
etching
diamond
image
detected
pit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202310829850.1A
Other languages
Chinese (zh)
Other versions
CN116577341A (en
Inventor
顾亚骏
蒋礼
全峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shenzhen Upl Plasma Technology Co ltd
Original Assignee
Shenzhen Upl Plasma Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Upl Plasma Technology Co ltd filed Critical Shenzhen Upl Plasma Technology Co ltd
Priority to CN202310829850.1A priority Critical patent/CN116577341B/en
Publication of CN116577341A publication Critical patent/CN116577341A/en
Application granted granted Critical
Publication of CN116577341B publication Critical patent/CN116577341B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/0002Inspection of images, e.g. flaw detection
    • G06T7/0004Industrial image inspection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/10Segmentation; Edge detection
    • G06T7/13Edge detection
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/60Analysis of geometric attributes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00Image analysis
    • G06T7/90Determination of colour characteristics
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/8851Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
    • G01N2021/8887Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06TIMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00Indexing scheme for image analysis or image enhancement
    • G06T2207/30Subject of image; Context of image processing
    • G06T2207/30108Industrial image inspection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30Computing systems specially adapted for manufacturing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Biochemistry (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Quality & Reliability (AREA)
  • Signal Processing (AREA)
  • Geometry (AREA)
  • Drying Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The application discloses a qualification detection method of a diamond surface etching pit and related equipment, wherein the method comprises the following steps: acquiring a surface image of diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image; calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image; and if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified. The application can effectively judge whether the diamond to be detected grows qualified or not by detecting the density and the depth of the etching pits on the surface of the diamond to be detected so as to judge whether the diamond to be detected is suitable for continuing the growth of the next stage or not.

Description

Qualification detection method for diamond surface etching pits and related equipment
Technical Field
The application relates to the technical field of image processing, in particular to a qualification detection method for diamond surface etching pits and related equipment.
Background
In MPCVD (Microwave plasma chemical vapordeposition ) single crystal diamond epitaxial growth, in order to further ensure the cleanliness of the diamond growth surface and reduce defects in the growth surface, a corresponding plasma etching treatment must be performed before the growth starts, wherein hydrogen plasma, or a small amount of oxygen, is added to etch the seed crystal surface.
The main purpose of etching is to expose defects in the diamond, and if the defects are exposed, the defects can be filled and even possibly repaired when the diamond grows, but in the etching process, etching pits with different numbers and different depths can be generated, when the number of the etching pits is too large or the etching pits are too deep, the etching pits are not in line with the growth of the diamond, however, the number of the etching pits on the etched surface of the diamond and the depths of the etching pits cannot be obtained in the prior art, and further judgment on whether the diamond to be detected is suitable for further growth cannot be further performed.
Accordingly, the prior art is still in need of improvement and development.
Disclosure of Invention
The application mainly aims to provide a qualification detection method, a qualification detection system, a qualification detection terminal and a qualification detection computer readable storage medium for diamond surface etching pits, and aims to solve the problem that whether diamond to be detected is qualified or not cannot be judged due to the fact that the number and the depth of the surface etching pits after diamond etching cannot be detected in the prior art.
In order to achieve the above object, the present application provides a method for detecting the eligibility of etching pits on a diamond surface, the method for detecting the eligibility of the etching pits on the diamond surface comprising the steps of:
acquiring a surface image of diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image;
calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image;
and if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified.
Optionally, in the method for detecting the qualification of the etching pits on the surface of the diamond, the acquiring a surface image of the diamond to be detected, and identifying the etching pits in a preset range of the surface image, so as to obtain an identified etching pit image, which specifically includes:
acquiring a surface image of the diamond to be detected, wherein the surface image is obtained by photographing the diamond to be detected by an electron microscope;
carrying out delineation in a preset range in the surface image to obtain a delineating surface image;
and acquiring the outline appearing in the circumscribing surface image, marking the outline appearing adjacently as an etching pit, and obtaining an etching pit image marked by the circumscribing surface image.
Optionally, in the method for detecting the qualification of the etching pits on the surface of the diamond, the acquiring a surface image of the diamond to be detected, and identifying the etching pits in a preset range of the surface image, so as to obtain an identified etching pit image, and then further including:
and equally dividing the etched pit images to obtain the equal divided etched pit images with preset numbers.
Optionally, the method for detecting the eligibility of the etching pits on the diamond surface, wherein the calculating the density ratio of the etching pits on the diamond surface to be detected and the color difference value of the etching pits according to the etching pit image specifically includes:
acquiring a first pixel area corresponding to an etching pit in the uniform etching pit image and a second pixel area corresponding to the delineating surface image;
obtaining a density ratio of the etching pits according to the first pixel area and the second pixel area, wherein the density ratio of the etching pits = the first pixel area/the second pixel area;
rendering the etching pits according to the density ratio of the etching pits to obtain a distribution thermodynamic diagram of the etching pits, and obtaining the distribution state of the etching pits in the uniform etching pit image through the distribution thermodynamic diagram;
acquiring a first chromaticity value corresponding to an etching pit in the uniform etching pit image and a second chromaticity value corresponding to the delineating surface image;
and obtaining a chromaticity difference value of the etching pit according to the first chromaticity value and the second chromaticity value, wherein the chromaticity difference value of the etching pit = the first chromaticity value-the second chromaticity value.
Optionally, in the method for detecting the qualification of the etching pits on the diamond surface, if the density ratio and the color difference value meet preset requirements, the diamond to be detected is detected to be qualified, which specifically includes:
comparing the density ratio with a preset density ratio, and judging that the density ratio of the etching pit of the diamond to be detected is qualified when the density ratio is smaller than the preset density ratio;
comparing the chromaticity difference value with a preset chromaticity difference value, and judging that the chromaticity difference value of the diamond to be detected is qualified when the chromaticity difference value is smaller than the preset chromaticity difference value.
Optionally, in the method for detecting the qualification of the etching pits on the diamond surface, if the density ratio and the color difference value meet preset requirements, the diamond to be detected is detected to be qualified, and then the method further includes:
and when the density ratio and the chromaticity difference value are detected to be qualified, controlling the continuous growth of the diamond to be detected.
Optionally, in the method for detecting eligibility of the etching pits on the diamond surface, the size of the preset range is as follows: 10mm.
In addition, in order to achieve the above object, the present application also provides a qualification testing system for diamond surface etching pits, wherein the qualification testing system for diamond surface etching pits comprises:
the etching pit identification module is used for acquiring a surface image of the diamond to be detected, and identifying the etching pit within a preset range of the surface image to obtain an identified etching pit image;
the etching pit image judging module is used for calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image;
and the diamond qualification judging module is used for judging whether the diamond to be detected is qualified if the density ratio and the color difference value meet preset requirements.
In addition, to achieve the above object, the present application also provides a terminal, wherein the terminal includes: the method comprises a memory, a processor and a qualification testing program of the diamond surface etching pits, wherein the qualification testing program of the diamond surface etching pits is stored in the memory and can run on the processor, and the qualification testing program of the diamond surface etching pits realizes the steps of the qualification testing method of the diamond surface etching pits when being executed by the processor.
In addition, in order to achieve the above object, the present application also provides a computer-readable storage medium storing a qualification test program for diamond surface pits, which when executed by a processor, implements the steps of the qualification test method for diamond surface pits as described above.
In the application, a surface image of diamond to be detected is obtained, and etching pits are identified within a preset range of the surface image, so that an identified etching pit image is obtained; calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image; and if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified. According to the method, the etching pit density value and the color difference value of the surface of the diamond to be detected are calculated by acquiring the etching pit image of the surface of the diamond to be detected, whether the diamond to be detected grows qualified or not is judged through the etching pit density value and the color difference value, and accordingly a related technician can know the growth condition of the diamond to be detected in time, and whether the next-stage growth is continued or not is judged according to the growth condition.
Drawings
FIG. 1 is a flow chart of a preferred embodiment of a method for qualifying an etch pit for a diamond surface in accordance with the present application;
FIG. 2 is a schematic diagram of a preferred embodiment of a method for qualifying a diamond surface etch pit in accordance with the present application prior to diamond etching;
FIG. 3 is a schematic view of the surface morphology of a seed crystal after 0.5h of oxyhydrogen plasma etching in accordance with a preferred embodiment of the qualification method of diamond surface pits of the present application;
FIG. 4 is a schematic view showing the surface morphology of a seed crystal after 1h of oxyhydrogen plasma etching according to a preferred embodiment of the qualification method of diamond surface pits of the present application;
FIG. 5 is a block diagram of a preferred embodiment of a qualification testing system for diamond surface pits of the present application;
fig. 6 is a block diagram of a preferred embodiment of the terminal of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more clear and clear, the present application will be further described in detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Defects such as threading dislocation or stacking dislocation are commonly present in natural and synthetic diamond single crystals, and for type IIa natural diamond, the defect density reaches 10/cm 2 . HTHP (High pressure High temperature, high temperature high pressure process) single crystal diamond has a much smaller defect density than natural diamond single crystals, but the catalyst added during synthesis tends to cause the crystals to contain a large amount of nitrogen and metal species, which greatly affects the application of the diamond single crystal.
H 2 /O 2 The plasma etching treatment can effectively improve and reduce defects caused by mechanical polishing on the surface of the single crystal, improve the appearance of MPCVD (Microwave plasma chemical vapordeposition ) epitaxial single crystal diamond, limit the generation of internal stress of the crystal, prevent the breakage of the crystal in the growth process and obviously improve the growth quality of the MPCVD single crystal diamond. The plasma etches surface defects and simultaneously makes defects in the crystal appear, and etching pits of different types appear. Therefore, the defects in the crystal and the surface defects can be distinguished, and meanwhile, the quality of the single crystal can be judged by comparing the number of etching pits.
The method for detecting the qualification of the etching pits on the diamond surface according to the preferred embodiment of the application, as shown in fig. 1, comprises the following steps:
and S10, acquiring a surface image of the diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image.
Impurities (defects) can be generated in the production process of the diamond, the diamond can be etched in an etching mode for removing the impurities, etching pits can be generated on the surface of the diamond after the diamond is etched, wherein the number of the etching pits represents the quality of the diamond, and when the number or depth of the etching pits on the surface of the diamond exceeds a certain threshold value, the quality of the diamond does not meet the production requirement and can not be selected to continue growing.
Meanwhile, the more etching pits on the diamond, the worse the surface flatness of the diamond detected currently, so that the cleaning of the diamond growth surface and the reduction of defects of the growth surface are further ensured, and the corresponding plasma etching treatment, hydrogen plasma or a small amount of oxygen added to the surface of the seed crystal can be used for etching treatment before the growth starts.
As shown in fig. 2, fig. 2 is a photograph of a topography before etching, and it can be seen from fig. 2 that the surface of the seed crystal which is not etched is relatively flat, and local areas have scratch damage generated by mechanical polishing, inherent defects of the surface of the seed crystal, and the like. During homoepitaxial single crystal diamond growth, these damage and defects often lead to the growth of non-epitaxial crystals, severely affecting the quality of single crystal diamond growth.
As shown in FIG. 3, FIG. 3 shows that the hydrogen-oxygen ratio charged under etching conditions is H 2 :O 2 As can be seen from fig. 3, scratches generated by polishing are still clearly visible, and after the oxyhydrogen plasma etching, defect dislocation areas on the surface of the seed crystal are exposed and corresponding etching pits are generated at these positions.
As shown in FIG. 4, FIG. 4 shows that the hydrogen-oxygen ratio charged under etching conditions is H 2 :O 2 The seed surface topography after 1h pretreatment at 750 ℃ and power of 4500W-5000W, as seen by the denser distribution of pits in fig. 4 compared to fig. 2 and 3.
After the surface image of the diamond to be detected is acquired, the surface image of the diamond to be detected is led into an etching pit analysis tool to analyze the density and depth of etching pits on the surface of the diamond to be detected, and the analysis is carried out in the following approximate process: 1: loading a surface image of the diamond (or seed crystal) to be detected; 2: searching etching pits in a designated area or the whole seed crystal area of the surface image; 3: for analysis of the whole seed crystal area, synchronously giving the density ratio and the color difference value of the etching pits; 4: and (5) giving a judging result after the diamond etching to be detected.
Specifically, a surface image of the diamond to be detected is obtained, and the surface image is obtained by photographing the diamond to be detected by an electron microscope.
When the diamond to be detected needs quality inspection, an optical electron microscope is adopted to shoot the diamond to be detected, the shot number is determined according to practical conditions, and the photo can reach the characterization condition, wherein before shooting, deionized water is firstly used for ultrasonic vibration to clean the diamond or seed crystal, so that impurities on the surface of the diamond or seed crystal are removed, and the observation result is prevented from being influenced.
The optical electron microscope mainly uses the principle of light reflection to carry out amplification imaging of a certain multiple on the surface of a sample so as to realize the initial observation of the surface morphology of the diamond film. Because the optical microscope is convenient and quick to use and low in cost, the optical microscope is one of the main means for researching the surface morphology of the sample. The magnification of a common optical microscope is generally about 100-800 times, and the surface state of homoepitaxial growth of single crystal diamond can be characterized. The optical microscope preferably used in the application is a binocular metallographic microscope of model MR2000, and the magnification thereof is 100 to 1250 times.
Carrying out delineation in a preset range in the surface image to obtain a delineating surface image;
the size of the preset range is as follows: 10mm x 10mm; and acquiring the outline appearing in the circumscribing surface image, marking the outline appearing adjacently as an etching pit, and obtaining an etching pit image marked by the circumscribing surface image.
The etching pit is mainly found by finding the outline in the surface image of the diamond to be detected, a plurality of outlines exist in the surface image, the area enclosed by the adjacent outlines is the etching pit, the image area can be found in the surface image by manual delineating, all the outlines are found in the established area, and the area enclosed by the adjacent outlines is the etching pit.
And step S20, calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image.
Specifically, the etched pit images are equally divided, and a preset number of equally divided etched pit images are obtained; the method comprises the steps of dividing a seed crystal image of 10mm x 10mm into 100 parts, calculating the density value of etching pits in each part, and rendering a thermodynamic diagram based on the etching pit density value according to the 100 density values.
The main purpose of etching is to expose defects in the diamond, then properly fill the defects during growth, and even repair the defects, but if the etching is excessive, the defects are exposed too much, or some defects are exposed clearly, but are exposed, the etching pits are deeper, and the possibility of repairing the etching pits during growth is lower. The etching pits on the surface of the diamond are in an inverted cone shape, and the depth and the size of the etching pits are greatly increased along with the increase of the etching strength.
When the photo is taken on the diamond, polishing is needed, the reflectivity of the light in the shallow etching pit is different from that of the light in the deeper etching pit, the color difference exists in the imaging result of the image, and the color difference value of the etching pit can be obtained through polishing.
Acquiring a first pixel area corresponding to an etching pit in the uniform etching pit image and a second pixel area corresponding to the delineating surface image; and obtaining the density ratio of the etching pits according to the first pixel area and the second pixel area, wherein the density ratio of the etching pits=the first pixel area/the second pixel area.
And rendering the etching pits according to the density ratio of the etching pits to obtain a distribution thermodynamic diagram of the etching pits, and obtaining the distribution state of the etching pits in the uniform etching pit image through the distribution thermodynamic diagram.
And acquiring the pixel area of each etching pit corresponding to the surface image in the defined surface image, and acquiring the pixel area of the defined area corresponding to the surface image, so as to obtain the diamond density data and the like required in the service scene.
Acquiring a first chromaticity value corresponding to an etching pit in the uniform etching pit image and a second chromaticity value corresponding to the delineating surface image; and obtaining a chromaticity difference value of the etching pit according to the first chromaticity value and the second chromaticity value, wherein the chromaticity difference value of the etching pit = the first chromaticity value-the second chromaticity value.
The general principle of distinguishing depth etching pits is as follows: and calculating the chromaticity values of the etching pit surrounding area and the ROI (delineation) area, wherein the chromaticity values can be the maximum value, the minimum value and the average value, and judging the depth and classification of the etching pit according to the difference value between the attributes of each dimension of the chromaticity between the maximum value, the minimum value and the average value.
And step S30, if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified.
Specifically, comparing the density ratio with a preset density ratio, and when the density ratio is smaller than the preset density ratio, judging that the density ratio of the etching pit of the diamond to be detected is qualified.
Comparing the chromaticity difference value with a preset chromaticity difference value, and judging that the chromaticity difference value of the diamond to be detected is qualified when the chromaticity difference value is smaller than the preset chromaticity difference value;
and when the density ratio and the chromaticity difference value are detected to be qualified, controlling the continuous growth of the diamond to be detected.
And when the density ratio and the chromaticity difference value of the etching pits on the diamond to be detected are detected to be qualified, filling the etching pits on the surface of the diamond to be detected.
The filling process of the etching pit is the diamond growth process, namely, the reaction gas (such as methane, hydrogen and the like) is excited by microwaves to form plasma on the diamond. Wherein, the plasma is an ionized gaseous substance composed of positive and negative ions generated after the atoms and the atomic groups of which partial electrons are deprived are ionized, and the whole plasma is electrically neutral. The plasma is spherically formed on the diamond substrate, the substrate can be heated to a certain temperature by utilizing the high temperature of the plasma, and ionized gas can continuously perform a series of physicochemical reactions on the seed crystal and gradually generate adsorption, desorption, migration, diffusion and deposition on the surface of the seed crystal, so that the filling of an etching pit is finally realized.
Further, as shown in fig. 5, based on the method for detecting the qualification of the etching pits on the diamond surface, the application further correspondingly provides a system for detecting the qualification of the etching pits on the diamond surface, wherein the system for detecting the qualification of the etching pits on the diamond surface comprises:
the etching pit identification module 51 is used for acquiring a surface image of the diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image;
the etching pit image judging module 52 is used for calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image;
and the diamond qualification judging module 53 is configured to qualify the diamond to be detected if the density ratio and the color difference value both meet preset requirements.
Further, as shown in fig. 6, based on the method and the system for detecting the qualification of the etching pits on the diamond surface, the application also correspondingly provides a terminal, which comprises a processor 10, a memory 20 and a display 30. Fig. 6 shows only some of the components of the terminal, but it should be understood that not all of the illustrated components are required to be implemented and that more or fewer components may alternatively be implemented.
The memory 20 may in some embodiments be an internal storage unit of the terminal, such as a hard disk or a memory of the terminal. The memory 20 may in other embodiments also be an external storage device of the terminal, such as a plug-in hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card) or the like, which are provided on the terminal. Further, the memory 20 may also include both an internal storage unit and an external storage device of the terminal. The memory 20 is used for storing application software installed in the terminal and various data, such as program codes of the installation terminal. The memory 20 may also be used to temporarily store data that has been output or is to be output. In one embodiment, the memory 20 stores a qualification program 40 for diamond surface pits, and the qualification program 40 for diamond surface pits can be executed by the processor 10, thereby implementing the qualification method for diamond surface pits in the present application.
The processor 10 may in some embodiments be a central processing unit (Central Processing Unit, CPU), microprocessor or other data processing chip for executing program code or processing data stored in the memory 20, such as performing a qualification method for the diamond surface pits, etc.
The display 30 may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, an OLED (Organic Light-Emitting Diode) touch, or the like in some embodiments. The display 30 is used for displaying information at the terminal and for displaying a visual user interface. The components 10-30 of the terminal communicate with each other via a system bus.
In one embodiment, the following steps are implemented when the processor 10 executes the qualification test program 40 for diamond surface pits in the memory 20:
acquiring a surface image of diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image;
calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image;
and if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified.
The method comprises the steps of obtaining a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, and obtaining an identified etching pit image, wherein the method specifically comprises the following steps of:
acquiring a surface image of the diamond to be detected, wherein the surface image is obtained by photographing the diamond to be detected by an electron microscope;
carrying out delineation in a preset range in the surface image to obtain a delineating surface image;
and acquiring the outline appearing in the circumscribing surface image, marking the outline appearing adjacently as an etching pit, and obtaining an etching pit image marked by the circumscribing surface image.
The method comprises the steps of acquiring a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, obtaining an identified etching pit image, and then further comprising:
and equally dividing the etched pit images to obtain the equal divided etched pit images with preset numbers.
The method specifically comprises the steps of calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image, wherein the method specifically comprises the following steps:
acquiring a first pixel area corresponding to an etching pit in the uniform etching pit image and a second pixel area corresponding to the delineating surface image;
obtaining a density ratio of the etching pits according to the first pixel area and the second pixel area, wherein the density ratio of the etching pits = the first pixel area/the second pixel area;
rendering the etching pits according to the density ratio of the etching pits to obtain a distribution thermodynamic diagram of the etching pits, and obtaining the distribution state of the etching pits in the uniform etching pit image through the distribution thermodynamic diagram;
acquiring a first chromaticity value corresponding to an etching pit in the uniform etching pit image and a second chromaticity value corresponding to the delineating surface image;
and obtaining a chromaticity difference value of the etching pit according to the first chromaticity value and the second chromaticity value, wherein the chromaticity difference value of the etching pit = the first chromaticity value-the second chromaticity value.
If the density ratio and the color difference value meet preset requirements, the diamond to be detected is detected to be qualified, which specifically comprises:
comparing the density ratio with a preset density ratio, and judging that the density ratio of the etching pit of the diamond to be detected is qualified when the density ratio is smaller than the preset density ratio;
comparing the chromaticity difference value with a preset chromaticity difference value, and judging that the chromaticity difference value of the diamond to be detected is qualified when the chromaticity difference value is smaller than the preset chromaticity difference value.
And if the density ratio and the color difference value meet preset requirements, the diamond to be detected is detected to be qualified, and then the method further comprises the following steps:
and when the density ratio and the chromaticity difference value are detected to be qualified, controlling the continuous growth of the diamond to be detected.
Wherein, the size of the preset range is: 10mm.
The present application also provides a computer-readable storage medium storing a qualification detection program for diamond surface pits, which when executed by a processor, implements the steps of the qualification detection method for diamond surface pits as described above.
In summary, the present application provides a method for detecting the qualification of etching pits on the surface of diamond and related equipment, the method includes: acquiring a surface image of diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image; calculating the density ratio of etching pits on the surface of the diamond to be detected and the color difference value of the etching pits according to the etching pit image; and if the density ratio and the color difference value meet preset requirements, the diamond to be detected is qualified. According to the method, the etching pit density value and the color difference value of the surface of the diamond to be detected are calculated by acquiring the etching pit image of the surface of the diamond to be detected, whether the diamond to be detected grows qualified or not is judged through the etching pit density value and the color difference value, and accordingly a related technician can know the growth condition of the diamond to be detected in time, and whether the next-stage growth is continued or not is judged according to the growth condition.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal comprising the element.
Of course, those skilled in the art will appreciate that implementing all or part of the above-described methods in the embodiments may be implemented by a computer program for instructing related hardware (such as a processor, a controller, etc.), where the program may be stored in a computer-readable storage medium, and where the program may include the steps of the above-described method embodiments when executed. The computer readable storage medium may be a memory, a magnetic disk, an optical disk, etc.
It is to be understood that the application is not limited in its application to the examples described above, but is capable of modification and variation in light of the above teachings by those skilled in the art, and that all such modifications and variations are intended to be included within the scope of the appended claims.

Claims (7)

1. The qualification detection method for the etching pits on the diamond surface is characterized by comprising the following steps of:
acquiring a surface image of diamond to be detected, and identifying etching pits within a preset range of the surface image to obtain an identified etching pit image;
the method comprises the steps of obtaining a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, and obtaining an identified etching pit image, wherein the method specifically comprises the following steps:
acquiring a surface image of the diamond to be detected, wherein the surface image is obtained by photographing the diamond to be detected by an electron microscope;
carrying out delineation in a preset range in the surface image to obtain a delineating surface image;
acquiring contours appearing in the circumscribing surface image, marking the contours appearing adjacently as etching pits, and obtaining an etching pit image marked by the circumscribing surface image;
the method comprises the steps of obtaining a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, obtaining an identified etching pit image, and then further comprising:
equally dividing the etched pit images to obtain equal divided etched pit images with preset numbers;
calculating the density ratio of etching pits on the surface of the diamond to be detected and the chromaticity difference value of the etching pits according to the etching pit image;
calculating the density ratio of etching pits on the surface of the diamond to be detected and the chromaticity difference value of the etching pits according to the etching pit image, wherein the method specifically comprises the following steps of:
acquiring a first pixel area corresponding to an etching pit in the uniform etching pit image and a second pixel area corresponding to the delineating surface image;
obtaining a density ratio of the etching pits according to the first pixel area and the second pixel area, wherein the density ratio of the etching pits = the first pixel area/the second pixel area;
rendering the etching pits according to the density ratio of the etching pits to obtain a distribution thermodynamic diagram of the etching pits, and obtaining the distribution state of the etching pits in the uniform etching pit image through the distribution thermodynamic diagram;
acquiring a first chromaticity value corresponding to an etching pit in the uniform etching pit image and a second chromaticity value corresponding to the delineating surface image;
obtaining a chromaticity difference value of the etching pit according to the first chromaticity value and the second chromaticity value, wherein the chromaticity difference value of the etching pit = the first chromaticity value-the second chromaticity value;
polishing when the diamond photographs are taken, wherein the reflectivity of the light is different between the shallower etching pit and the deeper etching pit, the color difference exists on the imaging result of the image, and the color difference value of the etching pit is obtained through polishing treatment;
calculating the chromaticity values of the etching pit surrounding area and the delineating area, wherein the chromaticity values comprise a maximum value, a minimum value and an average value, and judging the depth and classification of the etching pit through the difference value between the attributes of each dimension of chromaticity between the maximum value, the minimum value and the average value;
and if the density ratio and the chromaticity difference value meet preset requirements, the diamond to be detected is qualified.
2. The method for detecting the qualification of diamond surface etching pits according to claim 1, wherein if the density ratio and the chromaticity difference value both meet preset requirements, the diamond to be detected is detected to be qualified, specifically comprising:
comparing the density ratio with a preset density ratio, and judging that the density ratio of the etching pit of the diamond to be detected is qualified when the density ratio is smaller than the preset density ratio;
comparing the chromaticity difference value with a preset chromaticity difference value, and judging that the chromaticity difference value of the diamond to be detected is qualified when the chromaticity difference value is smaller than the preset chromaticity difference value.
3. The method for detecting the qualification of diamond surface etching pits according to claim 1, wherein if the density ratio and the chromaticity difference value both meet preset requirements, the diamond to be detected is detected to be qualified, and further comprising:
and when the density ratio and the chromaticity difference value are detected to be qualified, controlling the continuous growth of the diamond to be detected.
4. The method for qualifying a diamond surface etch pit as set forth in claim 1, wherein the predetermined range of dimensions is: 10mm.
5. The qualification detection system for the etching pits on the diamond surface is characterized by comprising the following components:
the etching pit identification module is used for acquiring a surface image of the diamond to be detected, and identifying the etching pit within a preset range of the surface image to obtain an identified etching pit image;
the method comprises the steps of obtaining a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, and obtaining an identified etching pit image, wherein the method specifically comprises the following steps:
acquiring a surface image of the diamond to be detected, wherein the surface image is obtained by photographing the diamond to be detected by an electron microscope;
carrying out delineation in a preset range in the surface image to obtain a delineating surface image;
acquiring contours appearing in the circumscribing surface image, marking the contours appearing adjacently as etching pits, and obtaining an etching pit image marked by the circumscribing surface image;
the method comprises the steps of obtaining a surface image of diamond to be detected, identifying etching pits in a preset range of the surface image, obtaining an identified etching pit image, and then further comprising:
equally dividing the etched pit images to obtain equal divided etched pit images with preset numbers;
the etching pit image judging module is used for calculating the density ratio of etching pits on the surface of the diamond to be detected and the chromaticity difference value of the etching pits according to the etching pit image;
calculating the density ratio of etching pits on the surface of the diamond to be detected and the chromaticity difference value of the etching pits according to the etching pit image, wherein the method specifically comprises the following steps of:
acquiring a first pixel area corresponding to an etching pit in the uniform etching pit image and a second pixel area corresponding to the delineating surface image;
obtaining a density ratio of the etching pits according to the first pixel area and the second pixel area, wherein the density ratio of the etching pits = the first pixel area/the second pixel area;
rendering the etching pits according to the density ratio of the etching pits to obtain a distribution thermodynamic diagram of the etching pits, and obtaining the distribution state of the etching pits in the uniform etching pit image through the distribution thermodynamic diagram;
acquiring a first chromaticity value corresponding to an etching pit in the uniform etching pit image and a second chromaticity value corresponding to the delineating surface image;
obtaining a chromaticity difference value of the etching pit according to the first chromaticity value and the second chromaticity value, wherein the chromaticity difference value of the etching pit = the first chromaticity value-the second chromaticity value;
polishing when the diamond photographs are taken, wherein the reflectivity of the light is different between the shallower etching pit and the deeper etching pit, the color difference exists on the imaging result of the image, and the color difference value of the etching pit is obtained through polishing treatment;
calculating the chromaticity values of the etching pit surrounding area and the delineating area, wherein the chromaticity values comprise a maximum value, a minimum value and an average value, and judging the depth and classification of the etching pit through the difference value between the attributes of each dimension of chromaticity between the maximum value, the minimum value and the average value;
and the diamond qualification judging module is used for judging whether the diamond to be detected is qualified if the density ratio and the chromaticity difference value meet preset requirements.
6. A terminal, the terminal comprising: a memory, a processor and a qualification test program for diamond surface pits stored on the memory and operable on the processor, the qualification test program for diamond surface pits when executed by the processor implementing the steps of the qualification test method for diamond surface pits according to any one of claims 1 to 4.
7. A computer-readable storage medium storing a qualification test program for diamond surface pits, which when executed by a processor, implements the steps of the qualification test method for diamond surface pits according to any one of claims 1 to 4.
CN202310829850.1A 2023-07-07 2023-07-07 Qualification detection method for diamond surface etching pits and related equipment Active CN116577341B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310829850.1A CN116577341B (en) 2023-07-07 2023-07-07 Qualification detection method for diamond surface etching pits and related equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310829850.1A CN116577341B (en) 2023-07-07 2023-07-07 Qualification detection method for diamond surface etching pits and related equipment

Publications (2)

Publication Number Publication Date
CN116577341A CN116577341A (en) 2023-08-11
CN116577341B true CN116577341B (en) 2023-09-19

Family

ID=87536146

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310829850.1A Active CN116577341B (en) 2023-07-07 2023-07-07 Qualification detection method for diamond surface etching pits and related equipment

Country Status (1)

Country Link
CN (1) CN116577341B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000696A1 (en) * 1983-07-25 1985-02-14 Sumitomo Electric Industries, Ltd. Method for automatically counting etched pits
CA1217573A (en) * 1984-10-05 1987-02-03 Tetuya Taguchi Automatic etch-pit counting system
US5943549A (en) * 1996-12-27 1999-08-24 Komatsu Electronics Metals Co., Ltd. Method of evaluating silicon wafers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985000696A1 (en) * 1983-07-25 1985-02-14 Sumitomo Electric Industries, Ltd. Method for automatically counting etched pits
CA1217573A (en) * 1984-10-05 1987-02-03 Tetuya Taguchi Automatic etch-pit counting system
US5943549A (en) * 1996-12-27 1999-08-24 Komatsu Electronics Metals Co., Ltd. Method of evaluating silicon wafers

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"标准超声振动气蚀孕育期内材料响应与表面形貌";宫雪 等;《摩擦学学报》;第33卷(第6期);第550-555页 *
"氢氧等离子体预处理对单晶金刚石刻蚀坑的研究";熊刚 等;《真空科学与技术学报》;第37卷(第9期);第909-915页 *

Also Published As

Publication number Publication date
CN116577341A (en) 2023-08-11

Similar Documents

Publication Publication Date Title
CN115020267B (en) Semiconductor surface defect detection method
US7955956B2 (en) Method for recycling/reclaiming a monitor wafer
US7257267B2 (en) Method and system for image segmentation
JP5024865B2 (en) Semiconductor substrate evaluation method
TWI767826B (en) Methods and systems for defect inspection and review
US20040092042A1 (en) Detection and classification of micro-defects in semi-conductors
JP2009521097A (en) Regeneration of substrates with defects and contaminants
CN116183623B (en) Intelligent wafer surface defect detection method and device
CN100481360C (en) Method for inspection, process for making analytic piece, method for analysis, and analyzer
CN109449093A (en) Wafer detection method
CN116577341B (en) Qualification detection method for diamond surface etching pits and related equipment
TWI283744B (en) Apparatus and method of inspecting pattern on semiconductor substrate, and computer-readable medium carrying a program for inspecting a semiconductor substrate
CN115565902A (en) Solar cell semi-finished product state evaluation method
CN113888477A (en) Network model training method, metal surface defect detection method and electronic equipment
CN110400762B (en) Foreign matter repairing method, device and storage medium
US20070141732A1 (en) Structural analysis method of deep trenches
Hahn et al. Characterisation of mirror-polished Si wafers and advanced Si substrate structures using the magic mirror method
JPH07249666A (en) Iron concentration measurement method of silicon wafer
CN110672631B (en) Panel defect photographing method and panel defect photographing device
Bakowskie et al. Fast Method to Determine the Structural Defect Density of 156 x 156 mm2 Mc-Si Wafers
US5849603A (en) Method of processing a surface of a semiconductor substrate
Sartorius et al. Luminescence microscopy for quality control of material and processing
CN112582291A (en) Method and system for identifying leakage conductive contact hole
CN115424099B (en) Model training method, recognition method and device for recognizing silicon carbide dislocation
JP2003188224A (en) Method for measuring dislocation pit density in compound semiconductor wafer

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant