CN116575119A - Crystalline oxide film, laminated structure, semiconductor device, and semiconductor system - Google Patents
Crystalline oxide film, laminated structure, semiconductor device, and semiconductor system Download PDFInfo
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- CN116575119A CN116575119A CN202310090773.2A CN202310090773A CN116575119A CN 116575119 A CN116575119 A CN 116575119A CN 202310090773 A CN202310090773 A CN 202310090773A CN 116575119 A CN116575119 A CN 116575119A
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- oxide film
- crystalline oxide
- metal
- film
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 162
- 229910052751 metal Inorganic materials 0.000 claims abstract description 104
- 239000002184 metal Substances 0.000 claims abstract description 94
- 230000000737 periodic effect Effects 0.000 claims abstract description 40
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 28
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052741 iridium Inorganic materials 0.000 claims description 14
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 239000010431 corundum Substances 0.000 claims description 12
- 150000002739 metals Chemical class 0.000 claims description 10
- 230000003746 surface roughness Effects 0.000 claims description 9
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 109
- 238000000034 method Methods 0.000 description 41
- 239000000758 substrate Substances 0.000 description 35
- 239000000463 material Substances 0.000 description 20
- 239000002994 raw material Substances 0.000 description 18
- 239000000243 solution Substances 0.000 description 18
- 239000012159 carrier gas Substances 0.000 description 14
- 239000013078 crystal Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 8
- 229910001195 gallium oxide Inorganic materials 0.000 description 8
- 125000006850 spacer group Chemical group 0.000 description 8
- 238000001816 cooling Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 229910044991 metal oxide Inorganic materials 0.000 description 7
- 150000004706 metal oxides Chemical class 0.000 description 7
- 239000003595 mist Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000005669 field effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 239000003085 diluting agent Substances 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000000443 aerosol Substances 0.000 description 3
- 238000000889 atomisation Methods 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910021482 group 13 metal Inorganic materials 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- -1 laminated structure Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000386 microscopy Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910015900 BF3 Inorganic materials 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000007607 die coating method Methods 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229910001867 inorganic solvent Inorganic materials 0.000 description 2
- 239000003049 inorganic solvent Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 2
- 238000004645 scanning capacitance microscopy Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000013505 freshwater Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001509 metal bromide Inorganic materials 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910001511 metal iodide Inorganic materials 0.000 description 1
- 229910001463 metal phosphate Inorganic materials 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002349 well water Substances 0.000 description 1
- 235000020681 well water Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
- H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
The invention provides a crystalline oxide film, a laminated structure, a semiconductor device and a semiconductor system which are industrially useful and have excellent semiconductor characteristics. A crystalline oxide film having a surface inclined with respect to the c-plane as a main surface, comprising gallium and a metal of group 9 of the periodic table, wherein the atomic ratio of the group 9 metal of the periodic table to all metal elements in the film is 23% or less.
Description
Technical Field
The present invention relates to a crystalline oxide film, a stacked structure, and a semiconductor device, which are particularly useful for a power semiconductor.
Background
As a next-generation switching element capable of realizing high withstand voltage, low loss, and high heat resistance, gallium oxide (Ga 2 O 3 ) The semiconductor device of (a) is attracting attention, and is expected to be applied to a power semiconductor device such as an inverter. Further, the wide band gap is expected to be applied to an optical transceiver such as an LED or a sensor. With respect to this gallium oxide, according to patent document 1, mixed crystal is performed with indium and aluminum, respectively or in combination, so that band gap control is possible, and the gallium oxide is extremely excellent as an InAlGaO semiconductor structureAttractive material system. The InAlGaO-based semiconductor herein represents In X Al Y Ga Z O 3 (0.ltoreq.X.ltoreq.2, 0.ltoreq.Y.ltoreq.2, 0.ltoreq.Z.ltoreq.2, X+Y+Z=1.5 to 2.5), and can be regarded as the same material system including gallium oxide (patent document 1).
In recent years, a gallium oxide p-type semiconductor has been studied, and patent document 2, for example, describes: if MgO (p-type dopant source) is used to form beta-Ga in a floating zone method (FZ) Z O 3 The crystal is crystalline, and a substrate having p-type conductivity can be obtained. Patent document 3 describes that: by forming alpha- (Al) by Molecular Beam Epitaxy (MBE) X Ga 1-X ) 2 O 3 A p-type dopant is added to the single crystal film to form a p-type semiconductor. However, in the methods described in patent document 2 and patent document 3, it is difficult to realize a p-type semiconductor having semiconductor characteristics that can be applied to a semiconductor device. Therefore, a p-type semiconductor which can be applied to a semiconductor device using an n-type semiconductor layer including gallium oxide having a large band gap is expected.
Patent document 1: international publication No. 2014/050793
Patent document 2: japanese patent laid-open publication No. 2005-340308
Patent document 3: japanese patent laid-open publication No. 2013-58677
Disclosure of Invention
An object of the present invention is to provide a crystalline oxide film having excellent semiconductor characteristics.
As a result of intensive studies to achieve the above object, the present inventors have found that a specific buffer layer (e.g., m-plane alpha-Ga 2 O 3 Layer) is formed of a crystalline oxide film containing gallium and a metal of group 9 of the periodic table, and it has been found that such a crystalline oxide film can be obtained with good semiconductor characteristics (a mixed crystal film of gallium oxide and a metal of group 9 of the periodic table) when the atomic ratio of the metal of group 9 of the periodic table to all metal elements in the film is within a specific range (23% or less).
Further, the present inventors have further studied after obtaining the above findings, and have completed the present invention. That is, the present invention relates to the following embodiments.
[1] A crystalline oxide film comprising gallium and a group 9 metal of the periodic table, wherein the atomic ratio of the group 9 metal of the periodic table to all metal elements in the film is 23% or less, with a surface inclined with respect to the c-plane as a main surface.
[2] The crystalline oxide film according to the above [1], wherein the crystalline oxide film has a corundum structure.
[3] The crystalline oxide film according to the above [1] or [2], wherein the main surface is a surface orthogonal to the c-plane.
[4] The crystalline oxide film according to any one of the preceding [1] to [3], wherein the main surface is an m-plane.
[5] The crystalline oxide film according to any one of the preceding [1] to [4], wherein the group 9 metal of the periodic table contains iridium.
[6] The crystalline oxide film according to any one of the preceding [1] to [5], wherein the resistivity of the crystalline oxide film decreases with an increase in temperature.
[7] The crystalline oxide film according to any one of the preceding [1] to [6], wherein an atomic ratio of the group 9 metal of the periodic table in the crystalline oxide film is 10% or less.
[8] The crystalline oxide film according to any one of the above [1] to [7], wherein the film thickness of the crystalline oxide film is 100nm or more.
[9] The crystalline oxide film according to any one of the preceding [1] to [8], wherein the surface roughness of the crystalline oxide film is 10nm or less.
[10] The crystalline oxide film according to any one of the preceding [1] to [9], wherein the crystalline oxide film has a p-type conductivity.
[11] The crystalline oxide film according to any one of the preceding [1] to [10], wherein the band gap of the crystalline oxide film is 5.0eV or more.
[12] A laminated structure is characterized by comprising at least: a first crystalline oxide film containing an oxide of one or more metals selected from aluminum, indium and gallium as a main component; and a second crystalline oxide film formed on the first crystalline oxide film, wherein a main surface of the first crystalline oxide film is a surface inclined with respect to a c-plane, the second crystalline oxide film contains gallium and a group 9 metal of the periodic table, and an atomic ratio of the group 9 metal of the periodic table to all metal elements in the second crystalline oxide film is 23% or less.
[13] The laminated structure according to the above [12], wherein the first crystalline oxide film has a corundum structure.
[14] A semiconductor device is characterized by comprising at least: the crystalline oxide film of any one of the above [1] to [11] or the laminated structure of the above [12] or [13 ]; an electrode.
[15] The semiconductor device according to the above [14], wherein the semiconductor device is a power device.
[16] A semiconductor system comprising a semiconductor device according to [14] or [15] above.
The crystalline oxide film of the present invention is excellent in semiconductor characteristics.
Drawings
Fig. 1 is a schematic configuration diagram of a film forming apparatus (an atomization CVD apparatus) used in the example.
Fig. 2 is a graph showing the measurement result of the temperature dependence of the resistivity in the example.
Fig. 3 is a graph showing the measurement result of the temperature dependence of the resistivity in the example.
Fig. 4 is a graph showing the measurement result of the temperature dependence of the resistivity in the comparative example.
Fig. 5 is a cross-sectional view schematically showing a preferred semiconductor device according to the embodiment of the present invention.
Fig. 6 is a cross-sectional view schematically showing a preferred semiconductor device according to the embodiment of the present invention.
Fig. 7 is a cross-sectional view schematically showing a preferred semiconductor device according to an embodiment of the present invention.
Fig. 8 is a diagram schematically showing a preferred example of the power card.
Fig. 9 is a diagram schematically showing a preferred example of the power supply system.
Fig. 10 is a diagram schematically showing a preferred example of the system device.
Fig. 11 is a diagram schematically showing a preferred example of a power supply circuit diagram of the power supply device.
Fig. 12 is a graph showing XRD measurement results in examples.
Fig. 13 is a graph showing a relationship between the film depth and the value (%) of Ir ratio (Ir/(ga+ir)) measured by rutherford back-scattering spectrometry (RBS) in examples.
Detailed Description
Next, preferred embodiments of the present invention will be described.
The crystalline oxide film of the present invention is characterized by containing gallium and a group 9 metal of the periodic table, wherein the main surface is a surface inclined with respect to the c-plane, and the atomic ratio of the group 9 metal of the periodic table to all metal elements in the film is 23% or less.
In the embodiment of the present invention, the c-plane means a {0001} plane. The plane inclined with respect to the c plane means, for example, {11-20} plane (a plane), {10-10} plane (m plane), { 1012} plane (R plane), {10-14} plane (R plane), {11-23} plane (n plane), {10-11} plane (S plane), or the like. In the embodiment of the present invention, the main surface of the crystalline oxide film is preferably a surface orthogonal to the c-plane, more preferably an m-plane or an a-plane, and most preferably an m-plane. By setting the main surface to such a preferable one, even when the band gap is larger (for example, the band gap is 5.0eV or more), a crystalline oxide film having a p-type mixed crystal of conductivity type can be obtained. The main surface of the crystalline oxide film further includes a surface having a deviation angle with respect to the surface. That is, for example, when the main surface is the a-plane, the main surface further includes a surface having a deviation angle with respect to the a-plane. The range of the off angle is not particularly limited as long as the object of the present invention is not hindered. The off angle is, for example, in the range of 0.2 ° to 12.0 °.
The crystalline oxide film contains gallium and a group 9 metal of the periodic table, and the atomic ratio of the group 9 metal of the periodic table (hereinafter, also simply referred to as "group 9 metal") in all metal elements in the film is 23% or less. Examples of the group 9 metal of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir). In an embodiment of the present invention, preferably, the group 9 metal is iridium. Further, "periodic table" refers to the periodic table of elements defined by the international union of pure and applied chemistry (International Union of Pure and Applied Chemistry, IUPAC).
The content (atomic ratio) of the group 9 metal in all metal elements in the crystalline oxide film is not particularly limited as long as it is 23% or less. In the embodiment of the present invention, the group 9 metal content is preferably 10% or less. The lower limit of the content (atomic ratio) of the group 9 metal in the crystalline oxide film is not particularly limited as long as the object of the present invention is not hindered. In the embodiment of the present invention, the content (atomic ratio) of the group 9 metal in the crystalline oxide film is usually 1% or more, preferably 3% or more. The content (atomic ratio) of gallium in the crystalline oxide film is preferably 77% or more, more preferably 90% or more. The upper limit of the content (atomic ratio) of gallium in the crystalline oxide film is not particularly limited as long as the object of the present invention is not hindered. In an embodiment of the present invention, the atomic ratio of gallium in the crystalline oxide film is, for example, 95% or less. By combining the above preferred main surface and the preferred range of the content ratio of gallium to the group 9 metal (for example, iridium or the like) of the periodic table, a mixed crystal film having a larger band gap (for example, 5.0eV or more) and having a p-type conductivity type gallium oxide and a group 9 metal oxide can be obtained. The band gap of the crystalline oxide film is, for example, 4.7eV or more, preferably 5.0eV or more, and more preferably 5.1eV or more.
The crystal structure of the crystalline oxide film is not particularly limited as long as the object of the present invention is not hindered. Examples of the crystal structure of the crystalline oxide film include a corundum structure, a β -gallia structure, a hexagonal structure (e.g., epsilon-type structure), a cubic structure (e.g., kappa-type structure), a cubic structure, and a tetragonal structure. In the embodiment of the present invention, it is preferable that the crystalline oxide film has a corundum structure. The film thickness of the crystalline oxide film is not particularly limited, and in the embodiment of the present invention, the film thickness is preferably 100nm or more. The surface roughness of the crystalline oxide film is not particularly limited either. In an embodiment of the present invention, the surface roughness (Ra) is preferably 10nm or less, more preferably 5nm or less. Here, the surface roughness (Ra) is a value calculated based on JIS B0601 using a surface shape measurement result concerning a region of 10 μm square obtained by Atomic Force Microscope (AFM). By setting the preferable film thickness and surface roughness as described above, the mixed crystal film can be suitably used for a semiconductor device or the like.
The crystalline oxide film of the present invention is preferably obtained by the following method. In an embodiment of the present invention, a method for producing a crystalline oxide film is characterized in that a raw material solution containing a group 9 metal (hereinafter, also simply referred to as "group 9 metal") of the periodic table and gallium is atomized and the droplets are floated to generate atomized droplets (including mist) using, for example, a cold-wall type atomized CVD apparatus as shown in fig. 1 (an atomizing step), the atomized droplets are transported to a surface of a substrate by a carrier gas (a transporting step), and then mixed crystals of a metal oxide containing iridium and gallium are formed on the surface of the substrate by thermally reacting the atomized droplets (a film forming step).
(atomizing step)
The atomizing step atomizes a raw material solution containing at least two metals of group 9 metals and gallium. In addition, the raw material solution may further contain other metals as needed. The atomizing method is not particularly limited as long as the raw material solution can be atomized, and a known method is available, and in the present invention, an atomizing method using ultrasonic waves is preferable. Since the initial velocity of the atomized liquid droplets obtained by using ultrasonic waves is zero, the atomized liquid droplets float in the air, and it is preferable that the atomized liquid droplets are not blown like a spray, but float in a space and can be transported in a gaseous form, and therefore, there is no damage due to collision energy, which is highly preferable. The droplet size of the atomized droplets is not particularly limited, and may be about several millimeters, preferably 50 μm or less, and more preferably 100nm to 10 μm.
(raw material solution)
The raw material solution is not particularly limited as long as it contains a group 9 metal and gallium, and may contain an inorganic material or an organic material. In addition, the raw material solution may further contain other metals as needed. In the case where the raw material solution contains a group 9 metal and gallium and other metals, the other metals are preferably a group 2 metal, a group 9 metal, and/or a group 13 metal other than gallium of the periodic table. The raw material solution may contain a group 9 metal and gallium, or may be divided into a raw material solution containing a group 9 metal and a raw material solution containing gallium, and the raw material solution may be subjected to an atomization step, and atomized droplets containing a group 9 metal and atomized droplets containing gallium obtained from the raw material solutions may be combined in a transport step or a film forming step. In the embodiment of the present invention, as the raw material solution, a solution in which a group 9 metal and/or gallium is dissolved or dispersed in an organic solvent or water in the form of a complex or a salt may be preferably used. Examples of the form of the complex include an acetylacetone complex, a carbonyl complex, an ammonia complex, and a hydride complex. Examples of the salt form include organic metal salts (e.g., metal acetates, metal oxalates, metal citrates, etc.), metal sulfide salts, metal nitrites, metal phosphates, metal halides (e.g., metal chlorides, metal bromides, metal iodides, etc.), and the like. Further, according to the atomized CVD method used in the embodiment of the present invention, film formation can be performed appropriately even if the raw material concentration is low.
The solvent of the raw material solution is not particularly limited, and may be an inorganic solvent such as water, an organic solvent such as alcohol, or a mixed solvent of an inorganic solvent and an organic solvent. In the present invention, the solvent preferably contains water, and more preferably a mixed solvent of water and an acid, unlike other conventional film forming methods. More specifically, the water may be pure water, ultrapure water, tap water, well water, mineral water, hot spring water, fresh water, sea water, or the like, and ultrapure water is preferable in the present invention. More specifically, examples of the acid include organic acids such as acetic acid, propionic acid, and butyric acid; boron trifluoride, boron trifluoride ether, boron trichloride, boron tribromide, trifluoroacetic acid, trifluoromethanesulfonic acid, p-toluenesulfonic acid and the like. In an embodiment of the present invention, acetic acid is preferred.
(matrix)
The substrate is not particularly limited as long as the substrate can support the crystalline oxide film. The material of the substrate is not particularly limited as long as the object of the present invention is not impaired, and may be a known substrate, an organic compound, or an inorganic compound. The shape of the base may be any shape, and any shape is effective, and examples thereof include a plate shape such as a flat plate or a circular plate, a fibrous shape, a rod shape, a cylindrical shape, a prismatic shape, a cylindrical shape, a spiral shape, a spherical shape, and an annular shape. The thickness of the substrate is not particularly limited in the present invention. As a base, another layer such as a buffer layer may be laminated on the substrate as will be described later. Semiconductor layers having different conductivities may be used as a substrate.
The substrate is not particularly limited as long as it is a plate-like substrate serving as a support for the semiconductor film. The substrate may be an insulator substrate, a semiconductor substrate, or a conductive substrate, and is preferably an insulator substrate, and a substrate having a metal film on a surface thereof is also preferably used. The substrate is preferably a substrate having a corundum structure, for example. The substrate material is not particularly limited as long as the object of the present invention is not hindered, and may be a known substrate material. Examples of the substrate having a corundum structure include a base substrate containing a substrate material having a corundum structure as a main component, and more specifically, examples thereof include a sapphire substrate (preferably an m-plane sapphire substrate), an α -gallium oxide substrate, and the like. The term "main component" as used herein means a substrate material having the above-described specific crystal structure, preferably contained in an amount of 50% or more, more preferably 70% or more, still more preferably 90% or more, and also 100% by atomic ratio, based on all components of the substrate material.
(carrying step)
In the transporting step, the mist is transported to the substrate by the carrier gas. The type of carrier gas is not particularly limited as long as the purpose of the present invention is not impaired, and examples thereof include inert gases such as oxygen, ozone, nitrogen, and argon, and reducing gases such as hydrogen and synthesis gas. Examples of the carrier gas using oxygen include air, oxygen, and ozone gas, and oxygen and/or ozone gas are particularly preferable. The carrier gas may be one kind or two or more kinds, and a diluent gas (for example, 10-fold diluent gas) having a changed carrier gas concentration may be further used as the second carrier gas. The carrier gas may be supplied at not only one location but also two or more locations. In the present invention, when the atomizing chamber, the supply pipe, and the film forming chamber are used, it is preferable that the supply portions of the carrier gas are provided in the atomizing chamber and the supply pipe, respectively, and it is more preferable that the supply portions of the carrier gas are provided in the atomizing chamber and the supply portions of the diluent gas are provided in the supply pipe. The flow rate of the carrier gas is not particularly limited, but is preferably 0.01 to 20L/min, and more preferably 1 to 10L/min. In the case of the diluent gas, the flow rate of the diluent gas is preferably 0.001 to 5L/min, more preferably 0.1 to 3L/min.
(film Forming step)
In the film forming step, the mist is reacted in the vicinity of the surface of the base material, whereby film formation is performed on a part or the whole of the surface of the base body. The reaction is not particularly limited as long as it is a thermal reaction in which the atomized droplets form a film, and is a reaction in which the mist can be reacted by heat, and the reaction conditions and the like are not particularly limited as long as the purpose of the present invention is not hindered. In this step, the thermal reaction is usually performed at a temperature higher than the evaporation temperature of the solvent, but is preferably not higher than the evaporation temperature. In the present invention, the thermal reaction is preferably performed at 1200 ℃ or less, more preferably at a temperature of 300 ℃ to 700 ℃ or 750 ℃ to 1200 ℃, and most preferably at 350 ℃ to 600 ℃ or 750 ℃ to 1100 ℃. In the present invention, the thermal reaction may be performed under any of vacuum, a non-oxygen atmosphere, a reducing gas atmosphere, and an oxidizing atmosphere, or may be performed under any of atmospheric pressure, a pressurized atmosphere, and a reduced pressure, and is preferably performed under an oxidizing atmosphere, more preferably under an atmospheric pressure, and even more preferably under an oxidizing atmosphere and under an atmospheric pressure. The "oxidizing atmosphere" is not particularly limited as long as it is an atmosphere capable of forming the crystalline oxide film by the thermal reaction. For example, an oxidizing atmosphere can be formed using a carrier gas containing oxygen or using mist composed of a raw material solution containing an oxidizing agent. In the present invention, the film thickness is preferably 1nm to 1mm, and the film thickness is preferably 1nm to 100 μm, and more preferably 1nm to 10 μm, because the film thickness can be set by adjusting the film formation time.
In the embodiment of the present invention, the film may be formed directly on the substrate, or a semiconductor layer (for example, an n-type semiconductor layer, an n+ type semiconductor layer, an n-type semiconductor layer, or the like), an insulator layer (including a semi-insulator layer), a buffer layer, or the like, which is different from the crystalline oxide film, may be stacked on the substrate, and then the film may be formed on the substrate with the other layers interposed therebetween. Examples of the semiconductor layer or the insulator layer include a semiconductor layer or an insulator layer containing the group 13 metal. As the buffer layer, a semiconductor layer, an insulator layer, a conductor layer, or the like including a corundum structure is preferable. Examples of the corundum structure-containing semiconductor layer include α -Fe 2 O 3 、α-Ga 2 O 3 Or alpha-Al 2 O 3 Etc. The method for stacking the buffer layer is not particularly limited, and may be the same as the method for forming the p-type oxide semiconductor.
In the embodiment of the present invention, the n-type semiconductor layer is preferably formed before or after the formation of the crystalline oxide film. More specifically, in the method for manufacturing a semiconductor device, it is preferable that the method at least includes a step of stacking the crystalline oxide film (p-type semiconductor layer) and the n-type semiconductor layer. The method for forming the n-type semiconductor layer is not particularly limited, and may be a known method, and in the present invention, an aerosol CVD method is preferable. The n-type semiconductor layer preferably contains an oxide semiconductor as a main component, and more preferably contains an oxide semiconductor containing a group 13 metal (for example, al, ga, in, tl or the like) of the periodic table as a main component. The n-type semiconductor layer preferably contains a crystalline oxide semiconductor as a main component, more preferably contains a crystalline oxide semiconductor containing Ga as a main component, and most preferably contains a crystalline oxide semiconductor having a corundum structure and containing Ga as a main component. The "main component" is a component containing preferably 50% or more of the oxide semiconductor, more preferably 70% or more, still more preferably 90% or more, and also 100% by atomic ratio with respect to all components of the n-type semiconductor layer.
Further, according to the above preferred manufacturing method, a laminated structure characterized by comprising at least: a first crystalline oxide film containing an oxide of one or more metals selected from aluminum, indium and gallium as a main component; and a second crystalline oxide film formed on the first crystalline oxide film, wherein a main surface of the first crystalline oxide film is a surface inclined with respect to a c-plane, the second crystalline oxide film contains gallium and a group 9 metal of the periodic table, and an atomic ratio of the group 9 metal of the periodic table to all metal elements in the second crystalline oxide film is 23% or less.
The crystalline oxide film having a specific composition obtained by the above-described preferred production method is industrially useful and is excellent in semiconductor characteristics. According to the above preferred preparationThe method of manufacturing the crystalline oxide film can obtain the crystalline oxide film with the temperature characteristic of the resistivity and the semiconductor property. More specifically, it is known that the resistivity of the crystalline oxide film decreases with an increase in temperature. In addition, according to the above preferred manufacturing method, the crystalline oxide film having p-type conductivity in addition to the above semiconductor characteristics can be obtained as the crystalline oxide film. Herein, "p-type" refers to a carrier type determined by hall effect measurement, scanning electrostatic capacitance microscopy (SCM: scanning Capacitance Microscopy), scanning nonlinear dielectric constant microscopy (SNDM: scanning Nonlinear Dielectric Microscopy), or the like. The lower limit of the carrier density of the crystalline oxide film (carrier density in the semiconductor film measured by hall effect) is not particularly limited, but is preferably about 1.0x10 15 /cm 3 More preferably about 1.0X10 18 /cm 3 The above. In the embodiment of the present invention, even when the metal of group 9 of the periodic table is contained, a carrier density of 5.0X10 can be obtained 19 /cm 3 The following crystalline oxide film having a p-type conductivity. In particular, by setting the Ir ratio of the metal element in the film to 10% or less, the crystalline oxide film having the above-described preferable carrier density can be obtained. In the embodiment of the present invention, the carrier density can be 2.0x10 by setting the Ir ratio in the metal element in the film to 9.5% or less 19 /cm 3 The following crystalline oxide films. The lower limit of the Ir ratio of the metal element in the film is not particularly limited, and is, for example, 5% or more, preferably 6.8% or more.
The above main surface and the content ratio of the group 9 metal and gallium are preferably in the range, and thus the temperature characteristic of the crystalline oxide film can be set to a semiconductor characteristic.
In this example, according to the above-described production method, m-plane α -Ga is formed on the surface using an atomizing CVD apparatus shown in fig. 1 2 O 3 Film on sapphire substrateα-(Ir，Ga) 2 O 3 Film formation of the film. Film formation was performed by changing the iridium content in the film to obtain α - (Ir, ga) having the characteristics shown in table 1 2 O 3 And (3) a film. The results of the X-ray diffraction measurement of the film of example 2 are shown in fig. 12. The Ir ratio in the film was calculated by energy dispersive X-ray Spectroscopy (EDS: energy Dispersive X-ray Spectroscopy). The carrier type was confirmed by hall effect measurement. Further, the crystalline oxide film obtained in example 2 had a carrier density of 1.0X10 17 /cm 3 The surface roughness (Ra) was 1.2nm. Further, it was found that a good film-like α - (Ir, ga) was obtained as a result of observation by a cross-sectional TEM (transmission electron microscope) 2 O 3 . The temperature characteristics were confirmed by measuring the temperature dependence of the resistivity. In example 1, the surface roughness (Ra) and the like were the same as those in example 2. The results of measuring the temperature dependence of the resistivity of example 1, example 2 and comparative example 1 in the range of normal temperature to 250 ℃ are shown in fig. 2, fig. 3 and fig. 4, respectively. From the results of fig. 2 to 4, the range of Ir ratios that exhibited semiconductor behavior in the temperature characteristic was calculated, and as a result, it was found that the temperature characteristic exhibited semiconductor behavior when the slope changed from positive to negative by 23% or less. The boundary value is α - (Ir, ga) for actually producing the m-plane 2 O 3 New findings were first identified after the membrane. By setting the range to the preferable range, an m-plane α - (Ir, ga) useful as a p-type semiconductor layer of a semiconductor device can be obtained 2 O 3 And (3) a film. Further, as a result of further experiments to confirm reproducibility, it was confirmed that the carrier type, the temperature characteristics of the resistivity, and the surface roughness (Ra) were the same as those of example 1 and example 2 even when the Ir ratio of the metal element in the film was 9.5%, 11.7%, and 14.3%. Further, in the case where the ratio of Ir in the metal element in the film is 9.5%, the carrier density is 1.98×10 19 /cm 3 。
TABLE 1
From the results of examples 1 and 2, it is understood that, for example, α - (Ir, ga) having an Ir ratio of 10% or less is performed as the first layer 2 O 3 Film formation of the film was performed as the second layer, and α - (Ir, ga) having a larger Ir ratio than that of the first layer was performed 2 O 3 The film is formed, whereby a second crystalline oxide film which has better crystallinity and is useful as a p-type semiconductor layer is obtained. In the embodiment of the present invention, the first crystalline oxide film and the second crystalline oxide film may be formed such that the Ir ratio of the second layer is larger than the Ir ratio of the first layer. The relationship between the film depth at the time of film formation and the value (%) of the Ir ratio (Ir/(ga+ir)) in the film is shown in fig. 13 in the form of example 3 and example 4.
The crystalline oxide film obtained in the above manner can be used as a p-type semiconductor layer for a semiconductor device, and is particularly useful for a power device. By using the crystalline oxide film and/or the stacked structure for a semiconductor device, rough scattering can be suppressed, and channel mobility of the semiconductor device can be made excellent. In addition, the semiconductor device can be classified into a lateral element (lateral device) in which an electrode is formed on one side of a semiconductor layer and a longitudinal element (longitudinal device) in which an electrode is formed on both front and back sides of a semiconductor layer, and in the present invention, both can be suitably used for the lateral device and the longitudinal device, and among them, it is preferable for the longitudinal device. Examples of the semiconductor device include a Schottky Barrier Diode (SBD), a junction barrier schottky diode (JBS), a metal semiconductor field effect transistor (MESFET), a High Electron Mobility Transistor (HEMT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), an electrostatic induction transistor (SIT), a Junction Field Effect Transistor (JFET), an Insulated Gate Bipolar Transistor (IGBT), and a light emitting diode.
Fig. 5 to 7 show examples in which the crystalline oxide film is used for a p-type semiconductor layer. The n-type semiconductor layer may be a layer containing an n-type dopant, the main component of which is the same as that of the crystalline oxide film, or may be an n-type semiconductor layer having a main component, etc., different from that of the crystalline oxide film. In the embodiment of the present invention, it is preferable that the n-type semiconductor layer has a main component different from that of the crystalline oxide film. The n-type semiconductor is preferably used as an n-type semiconductor layer, an n+ type semiconductor layer, or the like by adjusting the content of an n-type dopant, for example.
Fig. 5 shows an example of a preferred semiconductor device of the present invention. The semiconductor device of fig. 5 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and includes an n+ -type semiconductor layer (drain layer) 1, an n-type semiconductor layer (drift layer) 2, a p+ -type semiconductor layer (deep p layer) 6, a p-type semiconductor layer (channel layer) 7, an n+ -type semiconductor layer (n+ -type source layer) 11, a gate insulating film 13, a gate electrode 3, a p+ -type semiconductor layer 16, a source electrode 24, and a drain electrode 26. At least a part of the p+ -type semiconductor layer (deep p layer) 6 is buried in the n-type semiconductor layer 2 to a position deeper than the buried lower end portion 3a of the gate electrode 3. In the on state of the semiconductor device of fig. 5, when a voltage is applied between the source electrode 24 and the drain electrode 26 and a voltage positive to the source electrode 24 is applied to the gate electrode 3, a channel is formed at the interface between the p-type semiconductor layer 7 and the gate insulating film 13, and on is realized. In the off state, the gate electrode 3 is set to 0V, so that a channel cannot be formed, and the off state is realized. In the semiconductor device of fig. 5, the p+ -type semiconductor layer 6 is buried deeper into the n-type semiconductor layer 2 than the gate electrode 3. With such a configuration, the electric field near the lower portion of the gate electrode can be relaxed, and the electric field distribution in the gate insulating film 13 and the n-type semiconductor layer 2 can be improved. In the present invention, the crystalline oxide film is preferably used as the p+ type semiconductor layer (deep p layer) 6.
The materials of the gate electrode, the source electrode, and the drain electrode (hereinafter, also simply referred to as "electrodes") are not particularly limited as long as they can be used as electrodes, and may be conductive inorganic materials or conductive organic materials. In the present invention, the material of the electrode is preferably a metal, a metal compound, a metal oxide, or a metal nitride. The metal is preferably at least one metal selected from groups 4 to 11 of the periodic table. Examples of the metal of group 4 of the periodic table include titanium (Ti), zirconium (Zr), and hafnium (Hf). Examples of the metal of group 5 of the periodic table include vanadium (V), niobium (Nb), and tantalum (Ta). Examples of the metal of group 6 of the periodic table include one or more metals selected from chromium (Cr), molybdenum (Mo), tungsten (W), and the like. Examples of the metal of group 7 of the periodic table include manganese (Mn), technetium (Tc), and rhenium (Re). Examples of the metal of group 8 of the periodic table include iron (Fe), ruthenium (Ru), and osmium (Os). Examples of the group 9 metal of the periodic table include cobalt (Co), rhodium (Rh), and iridium (Ir). Examples of the metal of group 10 of the periodic table include nickel (Ni), palladium (Pd), and platinum (Pt). Examples of the metal of group 11 of the periodic table include copper (Cu), silver (Ag), and gold (Au).
The method for forming the electrode is not particularly limited, and examples thereof include known methods. More specifically, for example, a dry method, a wet method, or the like can be cited. Examples of the dry method include known methods such as sputtering, vacuum deposition, and CVD. Examples of the wet process include screen printing and die coating.
The constituent material of the gate insulating film (interlayer insulating film) is not particularly limited, and may be a known material. Examples of the material of the gate insulating film include SiO 2 Film, siON film, alON film, alN film, al 2 O 3 Film, hfO 2 Film, phosphorus addition SiO 2 (PSG) film, boron addition SiO 2 Film, phosphorus boron addition SiO 2 Films (BPSG films), and the like. Examples of the method for forming the gate insulating film include a CVD method, an atmospheric pressure CVD method, a plasma CVD method, an ALD method, and an aerosol CVD method. In the embodiment of the present invention, the method for forming the gate insulating film is preferably an aerosol CVD method or an atmospheric pressure CVD method. The material constituting the gate electrode is not particularly limited, and may be a known electrode material. As a constituent material of the gate electrode, for example, the constituent material of the source electrode described above, and the like are mentioned. The method for forming the gate electrode is not particularly limited. As the gate electrodeThe method of forming the electrode includes, for example, a dry method, a wet method, and the like. Examples of the dry method include sputtering, vacuum evaporation, CVD, and the like. Examples of the wet process include screen printing and die coating. The n+ type semiconductor layer 1 and the n-type semiconductor layer 2 may be made of the same material as the n type semiconductor layer.
The method of forming the layers of the semiconductor device of fig. 5 is not particularly limited as long as the object of the present invention is not hindered, and may be a known method. For example, a method of forming a film by vacuum deposition, CVD, sputtering, various coating techniques, and the like, and then patterning by photolithography, a method of directly patterning by printing techniques, and the like are mentioned, and in the present invention, an atomization CVD method is preferable.
Fig. 6 shows another example of a preferred semiconductor device of the present invention. The semiconductor device of fig. 6 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and is different from the semiconductor device of fig. 5 in that an i-type semiconductor layer 28 is provided between a p+ -type semiconductor layer (deep p layer) 6 and an n-type semiconductor layer (drift layer) 2. The i-type semiconductor layer 28 is not particularly limited as long as it is a layer having a carrier density smaller than that of the n-type semiconductor layer 2. In the embodiment of the present invention, the crystalline oxide film is preferably used as the p+ -type semiconductor layer 6. In the embodiment of the present invention, the main component of the i-type semiconductor layer 28 is preferably the same as the main component of the n-type semiconductor layer 2.
Fig. 7 shows another example of a preferred semiconductor device of the present invention. The semiconductor device of fig. 7 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and is different from the semiconductor device of fig. 6 in that a p-type semiconductor layer 27 is provided near the bottom of the gate. The p-type semiconductor layer 27 preferably contains a p-type oxide semiconductor different from the p-type oxide semiconductor as a main component of the p-type semiconductor layer (channel layer) 7 as a main component. In the present invention, the main component of the p-type semiconductor layer 27 may be the same as the main component of the p+ -type semiconductor layer 6.
The semiconductor device of the present invention is suitable for use as a power module, an inverter, or a converter, and is suitable for use in, for example, a semiconductor system using a power supply device, by using a known method in addition to the above-described matters. The power supply device can be manufactured by connecting the semiconductor device to a wiring pattern or the like by a known method. Fig. 9 shows an example of a power supply system. Fig. 9 uses a plurality of the power supply devices 171, 172 and a control circuit 173 to construct a power supply system 170. As shown in fig. 10, the power supply system 170 may be combined with electronic circuitry 181 for use with a system device 180. Fig. 11 shows an example of a power supply circuit diagram of the power supply device. Fig. 11 shows a power supply circuit of a power supply device including a power circuit and a control circuit, which converts a DC voltage to an AC voltage by switching the DC voltage at a high frequency by an inverter 192 (MOSFET: a to D), then performs insulation and transformation by a transformer 193, rectifies the DC voltage by a rectifier MOSFET 194, and then smoothes the DC voltage by a DCL 195 (smoothing coils L1 and L2) and a capacitor, thereby outputting a DC voltage. At this time, the output voltage is compared with a reference voltage by a voltage comparator 197, and the inverter 192 and the rectifying MOSFET 194 are controlled by a PWM control circuit 196 to form a desired output voltage.
In the present invention, the semiconductor device is preferably a power card (power card) including a cooler and an insulating member, more preferably the cooler is provided on both sides of the semiconductor layer at least via the insulating member, most preferably a heat dissipation layer is provided on both sides of the semiconductor layer, and the cooler is provided on the outside of the heat dissipation layer at least via the insulating member. Fig. 8 shows a power card as one of the preferred embodiments of the present invention. The power card of fig. 8 is a double-sided cooling type power card 201, and includes a cooling tube 202, a spacer 203, an insulating plate (insulating spacer) 208, a resin package 209, a semiconductor chip 301a, a metal heat transfer plate (protruding terminal portion) 302b, a heat sink and electrode 303, a metal heat transfer plate (protruding terminal portion) 303b, a solder layer 304, a control electrode terminal 305, and a bonding wire 308. The cross section of the cooling tube 202 in the thickness direction has a plurality of flow channels 222 defined by a plurality of partition walls 221, and the plurality of partition walls 221 extend in the flow channel direction at predetermined intervals. According to this preferred power card, higher heat dissipation can be achieved and higher reliability can be satisfied.
The semiconductor chip 301a is bonded to the inner main surface of the metal heat transfer plate 302b via the solder layer 304, and the metal heat transfer plate (protruding terminal portion) 302b is bonded to the remaining main surface of the semiconductor chip 301a via the solder layer 304, whereby the anode electrode surface and the cathode electrode surface of the flywheel diode 301b are connected in a so-called antiparallel manner to the collector electrode surface and the emitter electrode surface of the IGBT. As a material of the metal heat transfer plates (protruding terminal portions) 302b and 303b, mo or W, for example, may be mentioned. The metal heat transfer plates (protruding terminal portions) 302b and 303b have a thickness difference that absorbs the thickness difference between the semiconductor chip 301a and the flywheel diode 301b, whereby the outer surfaces of the metal heat transfer plates 302b and 303b are flat.
The resin package 209 is made of, for example, epoxy resin, and is molded so as to cover the side surfaces of the metal heat transfer plates 302b and 303b, and the semiconductor chip 301a and the flywheel diode 301b are molded by the resin package 209. However, the outer main surfaces of the metal heat transfer plates 302b and 303b, i.e., the contact heating surfaces, are completely exposed. The metal heat transfer plates (protruding terminal portions) 302b and 303b protrude rightward in fig. 8 from the resin package portion 209, and a control electrode terminal 305, which is a so-called lead frame terminal, connects a gate (control) electrode surface of the semiconductor chip 301a, for example, where an IGBT is formed, and the control electrode terminal 305.
The insulating plate 208 serving as an insulating spacer is made of, for example, an aluminum nitride film, but may be another insulating film. The insulating plate 208 is closely adhered to the metal heat transfer plates 302b and 303b while completely covering them, but the insulating plate 208 and the metal heat transfer plates 302b and 303b may be in contact only, or may be coated with a good heat conductive material such as silicone grease, or may be bonded by various methods. The insulating layer may be formed by ceramic plating or the like, or the insulating plate 208 may be bonded to the metal heat transfer plate, or the insulating plate 208 may be bonded to or formed on the cooling tube.
The refrigerant pipe 202 is produced by cutting a plate material formed by molding an aluminum alloy by a drawing method or an extrusion method into a desired length. The cross section of the cooling tube 202 in the thickness direction has a plurality of flow channels 222 defined by a plurality of partition walls 221, and the plurality of partition walls 221 extend in the flow channel direction at predetermined intervals. The spacer 203 may be a soft metal plate such as a solder alloy, or may be a film (film) formed on the contact surface of the metal heat transfer plates 302b and 303b by coating or the like. The surface of the soft spacer 203 is easily deformed, and is adapted to the minute irregularities or warpage of the resin package 209 and the minute irregularities or warpage of the cooling tube 202, thereby reducing the thermal resistance. The surface of the spacer 203 may be coated with a known grease or the like having good thermal conductivity, or the spacer 203 may be omitted.
Industrial applicability
The crystalline oxide film according to the embodiment of the present invention is particularly useful for semiconductor devices and the like because of its excellent p-type semiconductor characteristics, which can be used in all fields such as semiconductors (e.g., compound semiconductor electronic devices and the like), electronic and electrical equipment parts, optical and electrophotographic related devices, industrial parts and the like.
Description of the reference numerals
1n + type semiconductor layer
2 n-type semiconductor layer (drift layer)
3. Gate electrode
3a is embedded at the lower end part
6 p + type semiconductor layer (deep p layer)
7 p-type semiconductor layer (channel layer)
11 n+ type semiconductor layer
13. Gate insulating film
16 P+ type semiconductor layer
24. Source electrode
26. Drain electrode
27 P-type semiconductor layer
28 i-type semiconductor layer
29. Atomizing CVD device
30. Substrate board
32a carrier gas supply device
32b carrier gas (dilution) supply device
33a flow regulating valve
33b flow regulating valve
34. Mist generating source
34a raw material solution
34b mist
35. Container
35a water
36. Ultrasonic vibrator
37. Supply pipe
38. Heater
40. Film forming chamber
170. Power supply system
171. Power supply device
172. Power supply device
173. Control circuit
180. System device
181. Electronic circuit
182. Power supply system
192. Inverter with a power supply
193. Transformer
194. Rectifying MOSFET
195 DCL
196 PWM control circuit
197. Voltage comparator
201. Double-sided cooling type power card
202. Refrigerating pipe
203. Spacing piece
208. Insulating board (insulating spacer)
209. Resin encapsulation part
221. Partition wall
222. Flow path
301a semiconductor chip
301b flywheel diode
302b metal heat transfer plate (protruding terminal part)
303. Radiator and electrode
303b metal heat transfer plate (protruding terminal part)
304. Solder layer
305. Control electrode terminal
308. Bonding wire
Claims (16)
1. A crystalline oxide film characterized in that,
the film contains gallium and a metal of group 9 of the periodic table, wherein the atomic ratio of the metal of group 9 of the periodic table to all metal elements in the film is 23% or less, with a surface inclined with respect to the c-plane as a main surface.
2. The crystalline oxide film according to claim 1, wherein,
the crystalline oxide film has a corundum structure.
3. The crystalline oxide film according to claim 1 or 2, wherein,
the main surface is a surface orthogonal to the c-plane.
4. The crystalline oxide film according to any one of claim 1 to 3, wherein,
the main surface is an m-plane.
5. The crystalline oxide film according to any one of claims 1 to 4, wherein,
the group 9 metal of the periodic table comprises iridium.
6. The crystalline oxide film according to any one of claims 1 to 5, wherein,
the resistivity of the crystalline oxide film decreases with an increase in temperature.
7. The crystalline oxide film according to any one of claims 1 to 6, wherein,
the atomic ratio of the group 9 metal of the periodic table in the crystalline oxide film is 10% or less.
8. The crystalline oxide film according to any one of claims 1 to 7, wherein,
the film thickness of the crystalline oxide film is 100nm or more.
9. The crystalline oxide film according to any one of claims 1 to 8, wherein,
the surface roughness Ra of the crystalline oxide film is 10nm or less.
10. The crystalline oxide film according to any one of claims 1 to 9, wherein,
the crystalline oxide film has a p-type conductivity.
11. The crystalline oxide film according to any one of claims 1 to 10, wherein,
the band gap of the crystalline oxide film is 5.0eV or more.
12. A laminated structure, characterized in that,
at least provided with: a first crystalline oxide film containing an oxide of one or more metals selected from aluminum, indium and gallium as a main component; and a second crystalline oxide film formed on the first crystalline oxide film, wherein a main surface of the first crystalline oxide film is a surface inclined with respect to a c-plane, the second crystalline oxide film contains gallium and a group 9 metal of the periodic table, and an atomic ratio of the group 9 metal of the periodic table to all metal elements in the second crystalline oxide film is 23% or less.
13. The laminated structure according to claim 12, wherein,
the first crystalline oxide film has a corundum structure.
14. A semiconductor device is characterized by comprising at least: the crystalline oxide film according to any one of claims 1 to 11 or the laminated structure according to claim 12 or 13; an electrode.
15. The semiconductor device of claim 14, wherein,
the semiconductor device is a power device.
16. A semiconductor system provided with a semiconductor device which is the semiconductor device according to claim 14 or 15.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-018494 | 2022-02-09 | ||
| JP2023-011846 | 2023-01-30 | ||
| JP2023011846A JP2023116406A (en) | 2022-02-09 | 2023-01-30 | Crystalline oxide film, laminate structure and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116575119A true CN116575119A (en) | 2023-08-11 |
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ID=87532817
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310090773.2A Pending CN116575119A (en) | 2022-02-09 | 2023-02-09 | Crystalline oxide film, laminated structure, semiconductor device, and semiconductor system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116575119A (en) |
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