CN116565688A - High-performance DFB laser epitaxial wafer structure and preparation method - Google Patents

High-performance DFB laser epitaxial wafer structure and preparation method Download PDF

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Publication number
CN116565688A
CN116565688A CN202310468739.4A CN202310468739A CN116565688A CN 116565688 A CN116565688 A CN 116565688A CN 202310468739 A CN202310468739 A CN 202310468739A CN 116565688 A CN116565688 A CN 116565688A
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China
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layer
algainas
inp
quantum well
dfb laser
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Inventor
吕军
曹明德
余雪平
钟满意
程文涛
黄晓东
赵建宜
罗飚
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Hubei Optics Valley Laboratory
Accelink Technologies Co Ltd
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Hubei Optics Valley Laboratory
Accelink Technologies Co Ltd
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Priority to CN202310468739.4A priority Critical patent/CN116565688A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a high-performance DFB laser epitaxial wafer structure and a preparation method, wherein two or more types of barrier layers are arranged in an AlGaInAs mixed multi-quantum well layer of a DFB laser epitaxial wafer, the band gap heights of the barrier layers of different types are different, the band gap heights of the barrier layers of different types are gradually reduced from bottom to top in the AlGaInAs mixed multi-quantum well layer, so that holes at the upper end are easier to tunnel when hole carriers tunnel downwards from the top end of the AlGaInAs mixed multi-quantum well layer, and the holes can be ensured to tunnel to the lower end of the AlGaInAs mixed multi-quantum well layer, thereby improving differential gain and obtaining relatively higher modulation bandwidth.

Description

High-performance DFB laser epitaxial wafer structure and preparation method
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a high-performance DFB laser epitaxial wafer structure and a preparation method thereof.
Background
The semiconductor laser with no refrigeration, high speed, high reliability and low cost is a core photoelectronic device of a modern high-speed optical network. AlGaInAs/InP material systems (band edge discontinuity ratio of about 72:28) have a relatively large conduction band offset and therefore better electron confinement and hole distribution than InGaAsP/InP material systems (band edge discontinuity ratio of about 40:60). The distributed feedback multi-quantum well semiconductor laser has the advantages of low threshold current density, excellent temperature characteristic, good dynamic characteristic and the like, and is the most ideal light source of a modern high-speed optical network. For high-speed modulated semiconductor lasers, high differential gain can achieve high modulation bandwidth, while the state of carrier distribution between quantum wells directly affects the differential gain of the active region.
The AlGaInAs multiple quantum well layer in the existing structure is used for tunneling hole carriers from top to bottom, and a barrier layer of the same type and the same band gap height is usually used, but the barrier layer has a larger band gap height, so that the hole carriers can be blocked greatly, holes are difficult to reach the lowest potential well layer, the distribution uniformity of the hole carriers among quantum wells is low, the differential gain is low, and the modulation bandwidth of the laser is poor.
In view of this, overcoming the drawbacks of the prior art is a problem to be solved in the art.
Disclosure of Invention
The invention aims to solve the technical problem of improving the distribution uniformity of hole carriers among quantum wells, so that the differential gain is improved and the modulation bandwidth of a laser is improved.
The invention adopts the following technical scheme:
in a first aspect, a high performance DFB laser epitaxial wafer structure is provided, including two or more types of barrier layers 11:
the two or more types of barrier layers 11 are positioned in the AlGaInAs mixed multi-quantum well layer 1, all types of barrier layers 11 are sequentially arranged in the AlGaInAs mixed multi-quantum well layer 1 from bottom to top, and the number of each type of barrier layer 11 is one or more;
the band gap height of the different types of barrier layers 11 is gradually reduced from bottom to top in the AlGaInAs hybrid multiple quantum well layer 1.
Preferably, the band gap wavelength range of the barrier layer 11 in the lower half of the AlGaInAs hybrid multiple quantum well layer 1 is 1000nm to 1100nm, and the band gap wavelength range of the barrier layer 11 in the upper half of the AlGaInAs hybrid multiple quantum well layer 1 is 1100nm to 1200nm.
Preferably, the AlGaInAs hybrid multiple quantum well layer 1 further includes: a potential well layer 12 is arranged between every two adjacent barrier layers 11.
Preferably, the number of layers of the potential well layer 12 ranges from 3 layers to 15 layers, and the sum of the number of layers of all types of barrier layers 11 ranges from 4 layers to 16 layers.
Preferably, the thickness of each potential well layer 12 ranges from 3nm to 8nm, and the thickness of each potential barrier layer 11 ranges from 5nm to 10nm.
Preferably, the high performance DFB laser epitaxial wafer structure further includes:
an InP buffer layer 4, an InGaAsP grating layer 5, an InP cover layer 6, an InP cover layer 7, an AlGaInAs component graded layer 8, an AlInAs lower limit layer 9, an AlGaInAs lower waveguide component graded layer 10, the AlGaInAs mixed multi-quantum well layer 1, an AlGaInAs upper waveguide component graded layer 11, an AlInAs upper limit layer 12, an InP spacer layer 13, an InGaAsP corrosion resistant layer 14, an InP upper cladding layer 15, an InGaAsP upper component graded layer 16 and an InGaAs electrode contact layer 17 are sequentially arranged above the InP substrate 3 from bottom to top;
the AlGaInAs mixed multiple quantum well layer 1 is positioned between the AlGaInAs lower waveguide composition graded layer 10 and the AlGaInAs upper waveguide composition graded layer 11.
Preferably, all the barrier layers 11 are tensile strained with respect to the InP substrate 3, and the amount of strain of all the barrier layers 11 ranges from-0.2% to-1%.
Preferably, all of the potential well layers 12 are compressively strained with respect to the InP substrate 3 by an amount ranging from 0.5% to 1.7%.
In a second aspect, a method for preparing a high performance DFB laser epitaxial wafer structure, the method for preparing the high performance DFB laser epitaxial wafer structure includes:
manufacturing an AlGaInAs mixed multi-quantum well layer 1 on an InP substrate 3; the AlGaInAs mixed multi-quantum well layer 1 comprises two or more types of barrier layers 11, all types of barrier layers 11 are sequentially arranged in the AlGaInAs mixed multi-quantum well layer 1 from bottom to top, and the number of each type of barrier layer 11 is one or more;
different types of barrier layers 11 are fabricated in such a way that the band gap height gradually decreases from bottom to top.
Preferably, the method further comprises:
sequentially epitaxially growing an InP buffer layer 4, an InGaAsP grating layer 5 and an InP cover layer 6 on the surface of the InP substrate 3;
preparing grating patterns on the InP buffer layer 4, the InGaAsP grating layer 5 and the InP cover layer 6;
an InP cladding layer 7, an AlGaInAs composition graded layer 8, an AlInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multiple quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, an InP spacer layer 13, an InGaAsP corrosion resistant layer 14, an InP upper cladding layer 15, an InGaAsP upper composition graded layer 16 and an InGaAs electrode contact layer 17 are sequentially grown on the InGaAsP grating layer 5 and the InP cladding layer 6.
The embodiment of the invention provides a high-performance DFB laser epitaxial wafer structure and a preparation method, wherein two or more types of barrier layers are arranged in an AlGaInAs mixed multi-quantum well layer of a DFB laser epitaxial wafer, the band gap heights of the barrier layers of different types are different, the band gap heights of the barrier layers of different types are gradually reduced from bottom to top in the AlGaInAs mixed multi-quantum well layer, so that hole carriers at the upper end are easier to tunnel when hole carriers tunnel downwards from the top end of the AlGaInAs mixed multi-quantum well layer, and holes can flow to the lower end of the AlGaInAs mixed multi-quantum well layer, thereby improving differential gain and obtaining relatively higher modulation bandwidth.
Drawings
In order to more clearly illustrate the technical solution of the embodiments of the present invention, the drawings that are required to be used in the embodiments of the present invention will be briefly described below. It is evident that the drawings described below are only some embodiments of the present invention and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic structural diagram of an AlGaInAs hybrid multiple quantum well layer of a high performance DFB laser epitaxial wafer structure provided by an embodiment of the present invention;
FIG. 2 is a band gap height diagram of different types of barrier layers of a high performance DFB laser epitaxial wafer structure provided by an embodiment of the present invention;
fig. 3 is a schematic structural diagram of an epitaxial wafer structure of a high-performance DFB laser according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a grating pattern on an epitaxial wafer structure of a high-performance DFB laser according to an embodiment of the present invention;
fig. 5 is a flow chart of a method for preparing an epitaxial wafer of a high-performance DFB laser according to an embodiment of the present invention;
the graphic reference numerals are as follows:
an AlGaInAs hybrid multiple quantum well layer 1; a barrier layer 11; a first barrier layer 111; a second barrier layer 112; a third barrier layer 113; a potential well layer 12; an InP substrate 3; an InP buffer layer 4; an InGaAsP grating layer 5; an InP cap layer 6; an InP cladding layer 7; an AlGaInAs composition graded layer 8; an AlInAs lower confinement layer 9; an AlGaInAs lower waveguide composition graded layer 10; a waveguide composition graded layer 11 on AlGaInAs; an AlInAs upper confinement layer 12; inP spacer layer 13; an InGaAsP etch resistant layer 14; an InP upper cladding layer 15; a compositionally graded layer 16 on InGaAsP; inGaAs electrode contact layer 17.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In the description of the present invention, the terms "inner", "outer", "longitudinal", "transverse", "upper", "lower", "top", "bottom", etc. refer to an orientation or positional relationship based on that shown in the drawings, merely for convenience of describing the present invention and do not require that the present invention must be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In addition, the technical features of the embodiments of the present invention described below may be combined with each other as long as they do not collide with each other.
Example 1:
the embodiment 1 of the invention provides a high-performance DFB laser epitaxial wafer structure, as shown in fig. 1, comprising two or more types of barrier layers 11:
the two or more types of barrier layers 11 are positioned in the AlGaInAs mixed multi-quantum well layer 1, all types of barrier layers 11 are sequentially arranged in the AlGaInAs mixed multi-quantum well layer 1 from bottom to top, and the number of each type of barrier layer 11 is one or more;
the band gap height of the different types of barrier layers 11 is gradually reduced from bottom to top in the AlGaInAs hybrid multiple quantum well layer 1.
The AlGaInAs hybrid multiple quantum well layer 1 further includes: a potential well layer 12 is arranged between every two adjacent barrier layers 11.
As shown in fig. 1, three different filling shadow layers are three types of barrier layers 11, and a blank layer which is not filled is a potential well layer 12.
The AlGaInAs hybrid multiple quantum well layer 1 includes a barrier layer 11 and a potential well layer 12 stacked on each other, and the thicknesses of the barrier layers 11 and the potential well layers 12 may be the same or different.
In this embodiment, the band gap heights between the barrier layers 11 of different types are different, the number of the barrier layers 11 of different types may be the same or different, and all the barrier layers 11 of different types are arranged in the AlGaInAs hybrid multiple quantum well layer 1 from bottom to top, wherein the barrier layers 11 of the same type are arranged together; the gradual reduction from bottom to top is as follows: the barrier layers 11 of the respective types in the AlGaInAs hybrid multiple quantum well layer 1 are arranged in order of the band gap height from the top to the bottom.
In a practical application scenario, the AlGaInAs mixed multi-quantum well layer 1 is disposed on a substrate, the foregoing bottom-up direction can be understood as the direction from the substrate to the AlGaInAs mixed multi-quantum well layer, and the bottom-up gradual decrease can be understood as: the wider band gap barrier is adopted in the direction close to the substrate, and the narrower band gap barrier is adopted in the direction far away from the substrate, so that the uniformity of hole carriers distributed among quantum wells is improved, and the differential gain and the modulation bandwidth of the semiconductor laser are further improved.
As shown in fig. 2, a schematic diagram of an energy band structure of the AlGaInAs hybrid multiple quantum well layer 1, where the energy band structure is the band gap height, it should be noted that the energy band structure is not an actual structure of the barrier layer 11 or the potential well layer 12, and cannot be observed with naked eyes, and needs to be measured by an instrument; the wider energy band structure is the barrier layers 11, the potential well layers 12 are arranged between every two barrier layers 11, and the energy band structure of the potential well layers 12 is extremely narrow as can be seen from fig. 2; the two barrier layers 11 at the bottom in fig. 2 are the first barrier layer 111, the energy band structure of the first barrier layer 111 is the widest, the two barrier layers 11 at the middle in fig. 2 are the second barrier layer 112, the second barrier layer 112 is narrower than the energy band structure of the first barrier layer 111, the two barrier layers 11 at the top in fig. 2 are the third barrier layer 113, and the third barrier layer 113 is narrower than the energy band structure of the second barrier layer 112, so that the energy band structure (i.e. the band gap height) of the barrier layers 11 from bottom to top in the AlGaInAs hybrid multiple quantum well layer 1 in fig. 2 is gradually reduced.
In this embodiment, the wavelength range of the barrier layer 11 in the lower half of the AlGaInAs hybrid multiple quantum well layer 1 is 1000nm to 1100nm, and the wavelength range of the barrier layer 11 in the upper half of the AlGaInAs hybrid multiple quantum well layer 1 is 1100nm to 1200nm.
It is noted that the band gap height and wavelength can be regarded as two expressions of the same concept, band gap height=1.24/wavelength, where band gap Eg is in millielectron volts meV and wavelength is here in micrometers μm,1 μm=1000 nm.
The top end of the AlGaInAs mixed multi-quantum well layer 1 is a barrier layer 11, the bottom end of the AlGaInAs mixed multi-quantum well layer 1 is a barrier layer 11, and then the AlGaInAs mixed multi-quantum well layer 1 and the potential well layer 12 are arranged layer by layer in a mode of overlapping each other. The potential well layer 12 is only one type in this embodiment.
Since the AlGaInAs hybrid multiple quantum well layer 1 is used for tunneling hole carriers from top to bottom, in the prior art, a barrier layer 11 of the same type, i.e. the same band gap height, is generally used, but generally, the band gap height of such a barrier layer 11 is larger, which can generate a larger obstruction to the hole carriers, so that holes are difficult to reach the lowest-end potential well layer 12, and the differential gain is lower, resulting in a lower modulation bandwidth of the laser.
The present embodiment provides a high performance DFB laser epitaxial wafer structure, by disposing two or more types of barrier layers 11 in an AlGaInAs mixed multi-quantum well layer 1 of a DFB laser epitaxial wafer, the band gap heights of the different types of barrier layers 11 are different, the band gap heights of the different types of barrier layers 11 gradually decrease from bottom to top in the AlGaInAs mixed multi-quantum well layer 1, the band gap height of the barrier layers 11 in the lower half region in the AlGaInAs mixed multi-quantum well layer 1 is ensured to be larger, so that hole carriers at the upper end are easier to tunnel when the hole carriers tunnel from the top end of the AlGaInAs mixed multi-quantum well layer 1 to the lower end of the AlGaInAs mixed multi-quantum well layer 1, thereby ensuring that holes can tunnel to the lower end of the AlGaInAs mixed multi-quantum well layer 1, improving the distribution uniformity of the hole carriers among the AlGaInAs mixed multi-quantum wells, and further improving the differential gain, and obtaining relatively higher modulation bandwidth.
In this embodiment, the high performance DFB laser epitaxial wafer structure relates to other structures besides the AlGaInAs hybrid multiple quantum well layer 1, as follows:
as shown in fig. 3, an InP substrate 3 disposed at the bottom, an InP buffer layer 4, an InGaAsP grating layer 5, an InP cap layer 6, an InP cap layer 7, an AlGaInAs composition graded layer 8, an AlInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, an InP spacer layer 13, an InGaAsP corrosion-resistant layer 14, an InP upper cladding layer 15, an InGaAsP upper composition graded layer 16, and an InGaAs electrode contact layer 17 are disposed on the InP substrate 3 in this order from bottom to top;
the AlGaInAs mixed multiple quantum well layer 1 is positioned between the AlGaInAs lower waveguide composition graded layer 10 and the AlGaInAs upper waveguide composition graded layer 11.
In this embodiment, the InP substrate 3 is n-type, the InP buffer layer 4 is n-type, the InGaAsP grating layer 5 is n-type, the InP cap layer 6 is n-type, the n-type InP substrate 3 is placed in an MOCVD (Metal-organic Chemical Vapor Deposition ) or MBE (Molecular Beam Epitaxy, molecular beam epitaxy) reaction chamber, and the n-type InP buffer layer 4, the n-type InGaAsP grating layer 5 and the n-type InP cap layer 6 are sequentially grown epitaxially on the surface of the n-type InP substrate 3; preparing grating patterns on the n-type InP buffer layer 4, the n-type InGaAsP grating layer 5 and the n-type InP cover layer 6 by using a holographic method, an EBL (Electron Beam Lithography, an electron beam exposure system), a dry method or a wet method, wherein the grating patterns are respectively an InP buffer layer 4, an InGaAsP grating layer 5 and an InP cover layer 6 from bottom to top as shown in fig. 4, and the grating patterns start from the surface of the n-type InP cover layer 6 to extend deep into the n-type InP buffer layer 4; the InP cladding layer 7 is n-type, the InP spacing layer 13 is p-type, the InGaAsP corrosion-resistant layer 14 is p-type, the InP upper cladding layer 15 is p-type, the InGaAsP upper composition graded layer 16 is p-type, and the InGaAs electrode contact layer 17 is p-type; grating burial is performed in an MOCVD or MBE apparatus, and an n-type InP cladding layer 7, an n-type AlGaInAs composition graded layer 8, an n-type AlGaInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multiple quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, a p-type InP spacer layer 13, a p-type InGaAsP corrosion resistant layer 14, a p-type InP upper cladding layer 15, a p-type InGaAsP upper composition graded layer 16, and a p-type InGaAs electrode contact layer 17 are grown in this order on the InGaAsP grating layer 5 and InP cladding layer 6.
An InP buffer layer 4, an InGaAsP grating layer 5 and an InP cover layer 6 are sequentially epitaxially grown on the surface of the InP substrate 3
In this embodiment, the InP substrate 3 is n-type, the InP buffer layer 4 is n-type, the InGaAsP grating layer 5 is n-type, the InP cap layer 6 is n-type, the n-type InP substrate 3 is placed in an MOCVD or MBE reaction chamber, and the temperature is raised to 630 ℃ to 670 ℃ for heat treatment under the protection of PH3, so as to remove the oxide layer; keeping PH3 atmosphere unchanged, reducing the temperature to 580-650 ℃ of epitaxial growth temperature of InP and InGaAsP, stabilizing for several minutes, and sequentially epitaxially growing an n-type InP buffer layer 4, an n-type InGaAsP grating layer 5 and an n-type InP cover layer 6 on the surface of an InP substrate 3; wherein the thickness of the n-type InP buffer layer 4 ranges from 50nm to 300nm; the height of the n-type InGaAsP grating layer 5 ranges from 15nm to 45nm, the wavelength ranges from 1050nm to 1200nm and the duty ratio ranges from 40% to 60%; the InP cap layer 6 has a thickness of 8 to 15nm.
And preparing grating patterns on the InP buffer layer 4, the InGaAsP grating layer 5 and the InP cover layer 6.
In this embodiment, the grating pattern is prepared by holographic, EBL, dry or wet method, the prepared grating is firstly cleaned with glacial sulfuric acid, ethanol and pure water to remove the surface oxide layer, and then dried by a nitrogen gun and then immediately placed in an MOCVD or MBE reaction chamber to reduce the degree of reoxidation, because the oxide layer is unfavorable for the subsequent grating burying process.
An InP cladding layer 7, an AlGaInAs composition graded layer 8, an AlInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multiple quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, an InP spacer layer 13, an InGaAsP corrosion resistant layer 14, an InP upper cladding layer 15, an InGaAsP upper composition graded layer 16 and an InGaAs electrode contact layer 17 are sequentially grown on the InGaAsP grating layer 5 and the InP cladding layer 6.
In this embodiment, grating burying is performed in an MOCVD apparatus, and an n-type InP cladding layer 7, an n-type AlGaInAs composition graded layer 8, an n-type AlGaInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multi-quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, a p-type InP spacer layer 13, a p-type InGaAsP corrosion resistant layer 14, a p-type InP upper cladding layer 15, a p-type InGaAsP upper composition graded layer 16, and a p-type InGaAs electrode contact layer 17 are grown in this order on the InGaAsP grating layer 5 and the InP cladding layer 6. The AlGaInAs hybrid multiple quantum well layer 1 includes one type of potential well layer 12 and two or more types of barrier layers 11. The potential well layer 12 is compressively strained with respect to the InP substrate 3 by an amount ranging from 0.5% to 1.7%. The wavelength range of the barrier layer 11 in the upper half of the AlGaInAs mixed multi-quantum well layer 1 is 1100nm to 1200nm, and the wavelength range of the barrier layer 11 in the lower half of the AlGaInAs mixed multi-quantum well layer 1 is 1000nm to 1100nm. The two types of barrier layers 11 are tensile strained with respect to the InP substrate 3 by an amount ranging from-0.2% to-1%. The number of the potential well layers 12 of the multiple quantum well ranges from 3 to 15, and the sum of the numbers of all the barrier layers 11 ranges from 4 to 16. The thickness of each potential well layer 12 ranges from 3nm to 8nm, and the thickness of each potential barrier layer 11 ranges from 5nm to 10nm.
In this embodiment, there is also a PH3 atmosphere protection temperature rising process after the n-InP cladding layer 7 is grown. All AlInAs and AlGaInAs materials were grown at 670℃to 720 ℃. The growth temperatures of the p-type InP spacer layer 13, the p-type InGaAsP corrosion-resistant layer 14, the p-type InP upper cladding layer 15, and the p-type InGaAsP upper composition-graded layer 16 are 580 ℃ to 650 ℃. The p-type InGaAs electrode contact layer 17 is grown at a temperature of 530 c to 600 c.
According to the preparation method, all the barrier layers 11 are tensile strain relative to the InP substrate 3, and all the strain ranges of the barrier layers 11 are the first preset ratio ranges.
In this embodiment, the first preset ratio range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset ratio range is set to-0.2% to-1%.
All the potential well layers 12 are compressively strained with respect to the InP substrate 3, and the strain amount range is a second preset ratio range.
In this embodiment, the second preset ratio range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the second preset ratio range is set to 0.5% to 1.7%.
The number of layers of the potential well layer 12 ranges from 3 layers to 15 layers, and the number of layers of the barrier layers 11 of all types ranges from a first preset number of layers.
In this embodiment, the first preset layer number range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset layer number range is set to 4 layers to 16 layers.
The thickness of each potential well layer 12 ranges from 3nm to 8nm, and the thickness of each potential barrier layer 11 ranges from a first preset thickness range.
In this embodiment, the first preset thickness range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset thickness range is set to 5nm to 10nm.
The thickness range of the n-type InP buffer layer 4 is a second preset thickness range.
In this embodiment, the second preset thickness range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the second preset thickness range is set to be 50 to 300nm.
The height range of the n-type InGaAsP grating layer 5 is a first preset height range.
In this embodiment, the first preset height range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, in this embodiment, the first preset height range is set to 15 to 45nm
The band gap wavelength range of the n-type InGaAsP grating layer 5 is a first preset wavelength range.
In this embodiment, the first preset wavelength range is set by those skilled in the art according to the actual situation, and the relevant values need to be adjusted by referring to the corresponding DFB laser during the actual setting, in this embodiment, the first preset wavelength range is set to 1050 to 1200nm
The duty cycle range of the n-type InGaAsP grating layer 5 is a first preset duty cycle range.
In this embodiment, the first preset duty cycle range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset duty cycle range is set to 40% to 60%.
It should be noted that the above-mentioned numerical ranges are required to set corresponding numerical values in the relevant ranges when corresponding to different DFB laser designs.
Example 2:
the embodiment 2 of the invention provides a preparation method of a high-performance DFB laser epitaxial wafer structure, which is applied to the high-performance DFB laser epitaxial wafer structure in the embodiment 1.
An InP buffer layer 4, an InGaAsP grating layer 5, and an InP cap layer 6 are epitaxially grown in order on the surface of the InP substrate 3.
In this embodiment, the InP substrate 3 is n-type, the InP buffer layer 4 is n-type, the InGaAsP grating layer 5 is n-type, the InP cap layer 6 is n-type, the n-type InP substrate 3 is placed in an MOCVD or MBE reaction chamber, and the temperature is raised to 630 ℃ to 670 ℃ for heat treatment under the protection of PH3, so as to remove the oxide layer; keeping PH3 atmosphere unchanged, reducing the temperature to 580-650 ℃ of epitaxial growth temperature of InP and InGaAsP, stabilizing for several minutes, and sequentially epitaxially growing an n-type InP buffer layer 4, an n-type InGaAsP grating layer 5 and an n-type InP cover layer 6 on the surface of an InP substrate 3; wherein the thickness of the n-type InP buffer layer 4 ranges from 50nm to 300nm; the height of the n-type InGaAsP grating layer 5 ranges from 15nm to 45nm, the wavelength ranges from 1050nm to 1200nm and the duty ratio ranges from 40% to 60%; the InP cap layer 6 has a thickness of 8 to 15nm.
And preparing grating patterns on the InP buffer layer 4, the InGaAsP grating layer 5 and the InP cover layer 6.
In this embodiment, the grating pattern is prepared by holographic, EBL, dry or wet method, the prepared grating is firstly cleaned with glacial sulfuric acid, ethanol and pure water to remove the surface oxide layer, and then dried by a nitrogen gun and then immediately placed in an MOCVD or MBE reaction chamber to reduce the degree of reoxidation, because the oxide layer is unfavorable for the subsequent grating burying process.
An InP cladding layer 7, an AlGaInAs composition graded layer 8, an AlInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multiple quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, an InP spacer layer 13, an InGaAsP corrosion resistant layer 14, an InP upper cladding layer 15, an InGaAsP upper composition graded layer 16 and an InGaAs electrode contact layer 17 are sequentially grown on the InGaAsP grating layer 5 and the InP cladding layer 6.
In this embodiment, grating burying is performed in an MOCVD apparatus, and an n-type InP cladding layer 7, an n-type AlGaInAs composition graded layer 8, an n-type AlGaInAs lower confinement layer 9, an AlGaInAs lower waveguide composition graded layer 10, an AlGaInAs mixed multi-quantum well layer 1, an AlGaInAs upper waveguide composition graded layer 11, an AlInAs upper confinement layer 12, a p-type InP spacer layer 13, a p-type InGaAsP corrosion resistant layer 14, a p-type InP upper cladding layer 15, a p-type InGaAsP upper composition graded layer 16, and a p-type InGaAs electrode contact layer 17 are grown in this order on the InGaAsP grating layer 5 and the InP cladding layer 6. The AlGaInAs hybrid multiple quantum well layer 1 includes one type of potential well layer 12 and two or more types of barrier layers 11. The potential well layer 12 is compressively strained with respect to the InP substrate 3 by an amount ranging from 0.5% to 1.7%. The wavelength range of the barrier layer 11 in the upper half of the AlGaInAs mixed multi-quantum well layer 1 is 1100nm to 1200nm, and the wavelength range of the barrier layer 11 in the lower half of the AlGaInAs mixed multi-quantum well layer 1 is 1000nm to 1100nm. The two types of barrier layers 11 are tensile strained with respect to the InP substrate 3 by an amount ranging from-0.2% to-1%. The number of the potential well layers 12 of the multiple quantum well ranges from 3 to 15, and the sum of the numbers of all the barrier layers 11 ranges from 4 to 16. The thickness of each potential well layer 12 ranges from 3nm to 8nm, and the thickness of each potential barrier layer 11 ranges from 5nm to 10nm.
In this embodiment, there is also a PH3 atmosphere protection temperature rising process after the n-InP cladding layer 7 is grown. All AlInAs and AlGaInAs materials were grown at 670℃to 720 ℃. The growth temperatures of the p-type InP spacer layer 13, the p-type InGaAsP corrosion-resistant layer 14, the p-type InP upper cladding layer 15, and the p-type InGaAsP upper composition-graded layer 16 are 580 ℃ to 650 ℃. The p-type InGaAs electrode contact layer 17 is grown at a temperature of 530 c to 600 c.
According to the preparation method, all the barrier layers 11 are tensile strain relative to the InP substrate 3, and all the strain ranges of the barrier layers 11 are the first preset ratio ranges.
In this embodiment, the first preset ratio range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset ratio range is set to-0.2% to-1%.
All the potential well layers 12 are compressively strained with respect to the InP substrate 3, and the strain amount range is a second preset ratio range.
In this embodiment, the second preset ratio range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the second preset ratio range is set to 0.5% to 1.7%.
The number of layers of the potential well layer 12 ranges from 3 layers to 15 layers, and the number of layers of the barrier layers 11 of all types ranges from a first preset number of layers.
In this embodiment, the first preset layer number range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset layer number range is set to 4 layers to 16 layers.
The thickness of each potential well layer 12 ranges from 3nm to 8nm, and the thickness of each potential barrier layer 11 ranges from a first preset thickness range.
In this embodiment, the first preset thickness range is set by a person skilled in the art according to the actual situation, and the relevant numerical value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset thickness range is set to 5nm to 10nm.
The thickness range of the n-type InP buffer layer 4 is a second preset thickness range.
In this embodiment, the second preset thickness range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the second preset thickness range is set to be 50 to 300nm.
The height range of the n-type InGaAsP grating layer 5 is a first preset height range.
In this embodiment, the first preset height range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, in this embodiment, the first preset height range is set to 15 to 45nm
The band gap wavelength range of the n-type InGaAsP grating layer 5 is a first preset wavelength range.
In this embodiment, the first preset wavelength range is set by those skilled in the art according to the actual situation, and the relevant values need to be adjusted by referring to the corresponding DFB laser during the actual setting, in this embodiment, the first preset wavelength range is set to 1050 to 1200nm
The duty cycle range of the n-type InGaAsP grating layer 5 is a first preset duty cycle range.
In this embodiment, the first preset duty cycle range is set by a person skilled in the art according to the actual situation, and the relevant value needs to be adjusted by referring to the corresponding DFB laser during the actual setting, and in this embodiment, the first preset duty cycle range is set to 40% to 60%.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.

Claims (10)

1. A high performance DFB laser epitaxial wafer structure characterized by comprising two or more types of barrier layers (11):
the two or more types of barrier layers (11) are positioned in the AlGaInAs mixed multi-quantum well layer (1), all types of barrier layers (11) are sequentially arranged in the AlGaInAs mixed multi-quantum well layer (1) from bottom to top, and the number of each type of barrier layer (11) is one or more;
the band gap height of the barrier layers (11) of different types is gradually reduced from bottom to top in the AlGaInAs mixed multi-quantum well layer (1).
2. The high performance DFB laser epitaxial wafer structure of claim 1, wherein the band gap wavelength range of the barrier layer (11) in the lower half of the AlGaInAs hybrid multiple quantum well layer (1) is 1000nm to 1100nm and the band gap wavelength range of the barrier layer (11) in the upper half of the AlGaInAs hybrid multiple quantum well layer (1) is 1100nm to 1200nm.
3. The high performance DFB laser epitaxial wafer structure of claim 1, wherein the AlGaInAs hybrid multiple quantum well layer (1) further comprises: a potential well layer (12) is arranged between every two adjacent barrier layers (11).
4. A high performance DFB laser epitaxial wafer structure according to claim 3, characterized in that the number of potential well layers (12) ranges from 3 to 15 layers, the sum of the number of layers of all types of barrier layers (11) ranging from 4 to 16 layers.
5. A high performance DFB laser epitaxial wafer structure according to claim 3, characterized in that each of said potential well layers (12) has a thickness in the range of 3nm to 8nm and each of said barrier layers (11) has a thickness in the range of 5nm to 10nm.
6. The high performance DFB laser epitaxial wafer structure of claim 3, further comprising:
the InP substrate (3) is arranged at the bottom, and an InP buffer layer (4), an InGaAsP grating layer (5), an InP cover layer (6), an InP cover layer (7), an AlGaInAs component gradient layer (8), an AlInAs lower limiting layer (9), an AlGaInAs lower waveguide component gradient layer (10), an AlGaInAs mixed multi-quantum well layer (1), an AlGaInAs upper waveguide component gradient layer (11), an AlInAs upper limiting layer (12), an InP spacer layer (13), an InGaAsP corrosion resistant layer (14), an InP upper cladding layer (15), an InGaAsP upper component gradient layer (16) and an InGaAs electrode contact layer (17) are sequentially arranged above the InP substrate (3);
the AlGaInAs mixed multi-quantum well layer (1) is positioned between the AlGaInAs lower waveguide component graded layer (10) and the AlGaInAs upper waveguide component graded layer (11).
7. The high performance DFB laser epitaxial wafer structure of claim 6, wherein all of the barrier layers (11) are tensile strained with respect to the InP substrate (3), the amount of strain for all of the barrier layers (11) ranging from-0.2% to-1%.
8. The high performance DFB laser epitaxial wafer structure of claim 6, wherein all of said potential well layers (12) are compressively strained with respect to the InP substrate (3) by an amount ranging from 0.5% to 1.7%.
9. A method for preparing a high performance DFB laser epitaxial wafer structure, the method being used to prepare a high performance DFB laser epitaxial wafer structure according to any one of claims 1-8, comprising:
manufacturing an AlGaInAs mixed multi-quantum well layer (1) on an InP substrate (3); the AlGaInAs mixed multi-quantum well layer (1) comprises two or more types of barrier layers (11), all types of barrier layers (11) are sequentially arranged in the AlGaInAs mixed multi-quantum well layer (1) from bottom to top, and the number of each type of barrier layer (11) is one or more;
different types of barrier layers (11) are fabricated in such a way that the band gap height gradually decreases from bottom to top.
10. The method of fabricating a high performance DFB laser epitaxial wafer structure according to claim 9, further comprising:
an InP buffer layer (4), an InGaAsP grating layer (5) and an InP cover layer (6) are sequentially epitaxially grown on the surface of an InP substrate (3);
preparing grating patterns on the InP buffer layer (4), the InGaAsP grating layer (5) and the InP cover layer (6);
and an InP covering layer (7), an AlGaInAs component gradient layer (8), an AlInAs lower limiting layer (9), an AlGaInAs lower waveguide component gradient layer (10), an AlGaInAs mixed multi-quantum well layer (1), an AlGaInAs upper waveguide component gradient layer (11), an AlInAs upper limiting layer (12), an InP spacer layer (13), an InGaAsP corrosion resistant layer (14), an InP upper cladding layer (15), an InGaAsP upper component gradient layer (16) and an InGaAs electrode contact layer (17) are sequentially grown on the InGaAsP grating layer (5) and the InP covering layer (6).
CN202310468739.4A 2023-04-26 2023-04-26 High-performance DFB laser epitaxial wafer structure and preparation method Pending CN116565688A (en)

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