CN116560117A - Temperature control type resonant electro-optic phase modulator with low half-wave voltage - Google Patents
Temperature control type resonant electro-optic phase modulator with low half-wave voltage Download PDFInfo
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- CN116560117A CN116560117A CN202310557375.7A CN202310557375A CN116560117A CN 116560117 A CN116560117 A CN 116560117A CN 202310557375 A CN202310557375 A CN 202310557375A CN 116560117 A CN116560117 A CN 116560117A
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- 229920002492 poly(sulfone) Polymers 0.000 claims abstract description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000010949 copper Substances 0.000 claims abstract description 63
- 229910052802 copper Inorganic materials 0.000 claims abstract description 63
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 238000009413 insulation Methods 0.000 claims abstract description 17
- 239000003292 glue Substances 0.000 claims description 8
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 7
- 239000011888 foil Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000006641 stabilisation Effects 0.000 description 3
- 238000011105 stabilization Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0102—Constructional details, not otherwise provided for in this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0327—Operation of the cell; Circuit arrangements
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- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
Abstract
The invention discloses a temperature control type resonant electro-optic phase modulator with low half-wave voltage, and belongs to the technical field of laser modulation. Aiming at the problems that the residual amplitude modulation affects the modulation performance, the half-wave voltage of the existing electro-optic phase modulator is high, the modulation depth is low, the modulation frequency is not adjustable, electromagnetic interference is directly introduced to the temperature control of crystals, and the like, the temperature control type resonance electro-optic phase modulator comprises a polysulfone heat insulation shell, a modulator blank body, a polysulfone plate, a semiconductor refrigerator (TEC), a copper block, a base modulator blank cover and an LC resonance circuit board. The invention assembles the electro-optic crystal and the whole driving circuit in the shielding shell, places the TEC outside, separates the TEC from the wedge-shaped crystal, and finally controls the temperature of the whole modulator, thereby protecting each component inside the electro-optic phase modulator, realizing the isolation of external electromagnetic interference signals, reducing the introduction of additional noise signals and increasing the stability of the modulator.
Description
Technical Field
The invention belongs to the technical field of laser modulation, and particularly relates to a temperature control type resonant electro-optic phase modulator with low half-wave voltage.
Background
The ultra-narrow linewidth laser has very good short-term frequency stability, very low frequency noise and important application in the fields of optical frequency scale, high-resolution laser spectrum and the like. The PDH frequency stabilization technology locks the laser frequency on an F-P cavity with very stable resonant frequency, and is one of the main means for obtaining ultra-stable laser at present.
Laser phase modulation using Electro-optic phase modulators (Electro-Optical Phase Modulator, EOPM) is the primary process to achieve standard PDH frequency-stable locking. The electro-optic phase modulation is to apply an external electric field in a specific direction by using an electro-optic effect to change the refractive index distribution in a crystal, thereby modulating the phase of light. In experiments, it was found that during electro-optic phase modulation of the laser using the EOPM, the effect of phase modulation is impaired with a small amount of amplitude modulation, which is referred to as residual amplitude modulation (ResidualAmplitude Modulation, RAM), which is due to the fact that during electro-optic phase modulation, the amplitude of the modulation sidebands on both sides of the laser carrier are unequal, the phases are not opposite, or both. In the laser frequency stabilization technology, a noise signal with random fluctuation of power is introduced into a frequency stabilization system by the existence of the RAM, so that the further improvement of the laser stability is limited. In addition, the RAM generated by the birefringence effect varies with the temperature of the crystal, and the fluctuation of the temperature causes that the transmitted information cannot be extracted effectively, so that the RAM must be lowered by precisely controlling and stabilizing the temperature of the crystal, thereby improving the phase modulation performance. However, the existing commercial EOPM has the defects of large temperature control space occupation ratio, poor finished product effect, inconvenience in mass production and the like, and no temperature control facility is additionally arranged.
The principle of the electro-optic effect of the crystal shows that a strong external electric field must be applied to the crystal to change the optical characteristics of the whole crystal, but the amplitude of the sine wave modulation signal output by the signal source is usually only a few volts, and the half-wave voltage (the voltage value when changing the phase of the laser by 180 degrees) is usually hundreds of volts. The commercial broadband electro-optic phase modulator directly loads the modulated signals output by the signal source at two ends of the electro-optic crystal through the amplification of the power amplifier so as to realize phase modulation. But the half-wave voltage of this modulator is higher and the modulation depth is lower. The LC resonant circuit is combined with the design of the impedance matching network, so that the low modulation voltage output by the signal source can realize the increase of the voltage at two ends of the crystal through the resonance of the circuit, and meanwhile, the impedance matching is realized between the modulator and the transmission line, so that the circuit achieves the maximum power transmission. The resonant EOPM has high modulation depth, low power consumption and low half-wave voltage, and the resonant frequency can be flexibly selected according to the experiment requirement and is used for matching with the detection frequency of the detector and the frequency of the whole experiment system.
Disclosure of Invention
Aiming at the problems that the residual amplitude modulation affects the modulation performance, the half-wave voltage of the existing electro-optic phase modulator is high, the modulation depth is low, the modulation frequency is not adjustable, electromagnetic interference is directly introduced to the temperature control of crystals, and the like, the invention provides a temperature control type resonant electro-optic phase modulator with low half-wave voltage.
In order to achieve the above purpose, the present invention adopts the following technical scheme:
a temperature control type resonance electro-optic phase modulator with low half-wave voltage comprises a polysulfone thermal insulation shell, a modulator blank body, a polysulfone plate, a semiconductor refrigerator (TEC), a copper block, a base, a modulator blank cover and an LC resonance circuit board;
the polysulfone heat-insulating shell is of a hollow cuboid structure without a bottom surface; the top surface of the polysulfone heat-insulating shell is provided with a through hole of an SMA connector of the polysulfone heat-insulating shell, and two side surfaces of the polysulfone heat-insulating shell are respectively provided with a light-transmitting hole of the polysulfone heat-insulating shell;
the modulator empty shell body and the modulator empty shell cover form a hollow cuboid structure together; the modulator empty cover is arranged on the front surface of the modulator empty body, a circle of protrusions are arranged on the inner side of the modulator empty cover, and the modulator empty cover is clamped on the modulator empty body through the protrusions; the center of two sides of the modulator blank body is respectively provided with a modulator body light-passing hole, and the modulator body light-passing holes correspond to the polysulfone heat-insulating shell light-passing holes; a modulator body SMA joint through hole is arranged at the center of the top of the modulator blank body and corresponds to the polysulfone heat-insulating shell SMA joint through hole; a plurality of M2 modulator threaded holes are formed in the modulator blank body to fix the LC resonance circuit board, and a thermistor mounting hole is formed in the bottom of the modulator blank body;
the polysulfone plate is of a square ring structure; a square ring structure of the polysulfone plate is provided with a plurality of M2 polysulfone plate countersunk holes, M2 polysulfone plate threaded holes and polysulfone plate thermistor wiring holes corresponding to the thermistor mounting holes; the hollow part in the middle of the polysulfone plate is used for placing a semiconductor refrigerator (TEC) with the same size as the hollow part;
the copper block is cuboid, and copper block bulges with the same size are arranged at positions corresponding to the hollow parts in the middle of the copper block and the polysulfone plate and are used for compacting a semiconductor refrigerator (TEC); the copper block is provided with an M2 copper block counter sunk hole corresponding to the polysulfone plate; and a red copper block thermistor wiring hole corresponding to the thermistor mounting hole; the two vertex angles of the red copper block bulge are provided with red copper block semiconductor refrigerator wiring holes;
the bottom surface of the base is provided with a base square groove, and the rear surface of the base is provided with a temperature control joint through hole for placing a temperature control end joint; a plurality of M4 base countersunk holes and base thermistor wiring holes corresponding to the thermistor mounting holes are formed in the top surface of the base, and the base semiconductor refrigerator wiring holes corresponding to the copper block semiconductor refrigerator wiring holes are formed in the top surface of the base; the internal temperature control wiring design enables the temperature control modulator to be smaller and more attractive;
the LC resonance circuit board comprises a copper electrode, a wedge-shaped crystal, a PCB circuit board, an SMA connector for inputting signals and an adjustable inductor;
the copper electrode is tightly adhered to the wedge-shaped crystal through ultraviolet glue, the wedge-shaped crystal is adhered to the front surface of the PCB, the adjustable inductor is welded to the front surface of the PCB, and the wedge-shaped crystal and the adjustable inductor form an LC resonant circuit together through the PCB; the SMA connector is welded at the top of the PCB and is used for connecting a radio frequency driving input signal; the LC resonance circuit board is fixed in the modulator empty shell body through a screw; after the wedge-shaped crystal is fixed, the wedge-shaped crystal corresponds to modulator body light holes on two sides of the modulator blank body;
the base is connected with a red copper block through a screw, the upper part of the red copper block is tightly connected with a hollow polysulfone plate through a screw, the polysulfone plate is connected with a modulator empty shell through a screw, and the polysulfone heat-insulating shell is buckled on the upper part of the modulator empty shell body.
Further, a thermistor is arranged in the thermistor mounting hole, and the thermistor mounting hole is sealed by a heat insulating material so as to ensure the temperature control effect.
Further, indium foils are arranged between the upper surface of the semiconductor refrigerator (TEC) and the modulator blank body, and between the lower surface of the semiconductor refrigerator (TEC) and the red copper block, and the indium foils are tightly attached.
Further, the modulator blank cover is fixedly arranged on the front face of the modulator blank body through glue.
Furthermore, the copper electrode and the wedge-shaped crystal are tightly adhered through ultraviolet glue, and the whole capacitor is equivalent to one capacitor.
Further, the end face of one side of the wedge-shaped crystal is provided with an inclination angle of 4 degrees, and the influence of residual amplitude modulation is reduced to the greatest extent.
Further, a groove is formed in the back plate inside the modulator blank body, so that the contact area between the circuit board and the modulator shell is reduced.
Further, the bottom surface of base is equipped with the base square groove, can reduce the area of contact of modulator and platform, is convenient for accomodate the control by temperature change line again and makes the modulator whole small and exquisite pleasing to the eye.
Compared with the prior art, the invention has the following advantages:
the invention provides an integrated temperature-control resonant electro-optic phase modulator. The size of the RAM is important to the phase difference caused by the natural birefringence effect in the electro-optic crystal, when the ambient temperature changes, the phase difference caused by the electro-optic crystal changes, and finally the drift of the zero base line of the feedback control error signal is caused to generate the RAM, and for the resonant electro-optic phase modulator, the performance is particularly seriously affected by the temperature, and the active temperature control is required to ensure the optimal modulation frequency point and reduce the RAM. The temperature control measure commonly used at present is to directly control the temperature of the whole crystal, but the mode needs to design a more complex temperature control circuit, so that the whole modulation device is large in size, and additional useless signals are introduced to influence the modulation effect; the invention is different from the previous mode, the electro-optic crystal and the whole driving circuit are assembled in the shielding shell, the TEC is placed outside, the TEC is separated from the wedge-shaped crystal, and finally the temperature of the whole modulator is controlled, so that not only are the internal components of the electro-optic phase modulator protected, but also the isolation of external electromagnetic interference signals can be realized, the introduction of additional noise signals is reduced, and the stability of the modulator is improved.
According to the invention, the empty shell of the modulator is tightly connected with the polysulfone plate, the red copper block and the base through the screws, corresponding wire outlet holes are designed in the polysulfone plate, the red copper block and the base and used for wiring of the thermistor and the TEC, a square groove is designed below the base and used for storing redundant wires, a circular through hole is designed on the side surface of the base and used for placing a temperature control interface for connecting a temperature control instrument, and the temperature control circuit is designed to enable the modulator to be smaller, tidier and more attractive. In addition, in order to realize high-efficiency and precise temperature control and reduce electromagnetic interference, a thermistor is placed in a thermistor mounting hole at the bottom of the empty shell of the modulator, and the thermistor mounting hole is sealed by a heat insulating material; placing a TEC with proper size in the middle of the polysulfone plate, and covering the upper surface and the lower surface of the TEC with indium foil, so that the TEC is tightly pressed at the bottom of a modulator blank by a red copper block, but the upper surface and the lower surface are not directly contacted with the modulator blank and the red copper block; and a polysulfone thermal insulation shell is additionally arranged outside the empty modulator shell to form a closed space. And a layer of heat-conducting silicone grease is uniformly coated between the base and the red copper block, so that heat transfer is increased, and the temperature control effect is enhanced.
The invention adopts single-end wedge angle LiNbO 3 The crystal and the low-loss high-Q electronic element form an LC resonant circuit, the amplitude of the radio frequency signals loaded at the two ends of the crystal is amplified by utilizing the resonance enhancement principle, the half-wave voltage is reduced, and low power consumption and high modulation depth are realized; and the manufacturing process of the modulation circuit is improved, such as electrode plating is directly carried out on the wedge-shaped crystal, the PCB circuit board is utilized to connect all components, the lower electrode of the crystal is directly contacted with the ground of the circuit board, electrode wires are welded on the circuit board, and the Q value of the resonance circuit is further improved by using high-Q-value inductors and the like. In addition, the clear aperture of the modulator empty shell is large, the light beam passing is easy to adjust, and the resonance frequency of the modulator empty shell can be flexibly selected according to experimental requirements. When the polarization direction of the incident linearly polarized light and the optical axis of the electro-optical crystal are not coincident, the light in two polarization directions perpendicular to each other can be spatially separated by the chamfer end face due to the double refraction effect of the crystal, so that interference between a carrier wave and two sidebands perpendicular to each other is eliminated, and the influence of residual amplitude modulation is reduced.
The invention optimizes the modulation performance of the phase modulator through the combination of the LC resonance modulation circuit and the unique temperature control design, effectively reduces half-wave voltage, reduces the influence of residual amplitude modulation, increases the stability of the modulator, obtains better phase modulation signals, and provides key devices and technical approaches for the fields of preparing high-stability quantum light sources, ultra-stable lasers and the like.
Drawings
FIG. 1 is a schematic diagram of an exploded structure of a temperature-controlled resonant electro-optic phase modulator according to the present invention;
FIG. 2 is a schematic structural view of a polysulfone thermal insulation enclosure of the present invention;
FIG. 3 is a schematic diagram of the structure of a modulator blank cap of the present invention;
FIG. 4 is a schematic bottom view of a modulator blank according to the present invention;
FIG. 5 is a schematic diagram of the front view of the empty modulator housing of the present invention;
FIG. 6 is a schematic structural view of a polysulfone plate of the present invention;
FIG. 7 is a schematic view of the structure of the copper block of the present invention;
FIG. 8 is a schematic view of the structure of the base of the present invention;
FIG. 9 is a schematic bottom view of the base of the present invention;
FIG. 10 is a schematic diagram of an LC resonance circuit assembly of the present invention;
FIG. 11 is a schematic view showing the structure of wedge-shaped crystal, copper electrode and inclination angle of the present invention;
FIG. 12 is a schematic view of the overall structure of the front view of the present invention;
FIG. 13 is a schematic view showing the overall structure of the inside of the front view of the present invention
FIG. 14 is a diagram of a modulation characteristic test experimental apparatus of the present invention;
FIG. 15 is a graph showing the results of the reflection characteristic test of the present invention;
FIG. 16 is a graph showing the results of transmission characteristic testing in accordance with the present invention;
wherein, 1, polysulfone thermal insulation shell; 101. through holes of SMA connectors of polysulfone heat-insulating shells; 102. the polysulfone heat-insulating shell is provided with a light-transmitting hole; 2. a modulator blank body; 201. m2 modulator threaded holes; 202. a thermistor mounting hole; 203. a modulator body light-passing hole; 204. modulator body SMA joint through-holes; 205. a threaded hole at the bottom of M2; 3. a polysulfone plate; 301. countersunk holes of the M2 polysulfone plate; 302. m2 polysulfone plate threaded holes; 303. polysulfone plate thermistor wiring holes; 4. a semiconductor cooler (TEC); 5. copper block; 501. the M2 red copper block is countersunk; 502. the red copper block is convex; 503. wiring holes of the copper block semiconductor refrigerator; 504. a red copper block thermistor wiring hole; 6. a base; 601. a countersunk hole of the M4 base; 602. a base thermistor wiring hole; 603. a wiring hole of the base semiconductor refrigerator; 604. a temperature control joint through hole; 605. a square groove of the base; 7. modulator blank cap; 8. an LC resonance circuit board; 801. a copper electrode; 802. a wedge-shaped crystal; 803. a PCB circuit board; 804. an SMA joint; 805. the inductance is adjustable.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Example 1
A temperature control type resonance electro-optic phase modulator with low half-wave voltage, as shown in the exploded structure schematic diagram of figure 1, comprises a polysulfone thermal insulation shell 1, a modulator blank body 2, a polysulfone plate 3, a semiconductor refrigerator (TEC) 4, a red copper block 5, a base 6, a modulator blank cover 7 and an LC resonance circuit board 8;
the polysulfone thermal insulation shell 1 is of a hollow cuboid structure without a bottom surface; the top surface of the polysulfone thermal insulation shell 1 is provided with a polysulfone thermal insulation shell SMA joint through hole 101, and two side surfaces of the polysulfone thermal insulation shell 1 are respectively provided with a polysulfone thermal insulation shell light-transmitting hole 102; FIG. 2 is a schematic structural view of the polysulfone thermal insulation enclosure of the present invention;
the modulator empty shell body 2 and the modulator empty shell cover 7 form a hollow cuboid structure together; the modulator empty cover 7 is arranged on the front surface of the modulator empty body 2, a circle of protrusions are arranged on the inner side of the modulator empty cover 7, and the modulator empty cover 7 is clamped on the modulator empty body 2 through the protrusions; the centers of the two side surfaces of the modulator blank body 2 are respectively provided with a modulator body light-passing hole 203, and the modulator body light-passing holes 203 correspond to the polysulfone heat-insulation shell light-passing holes 102; a modulator body SMA joint through hole 204 is arranged at the center of the top of the modulator blank body 2 and corresponds to the polysulfone heat-insulating shell SMA joint through hole 101; a plurality of M2 modulator threaded holes 205 are formed in the modulator blank body 2 to fix the LC resonance circuit board 8, and a thermistor mounting hole 202 is formed in the bottom of the modulator blank body 2; as shown in the schematic structural diagrams of the modulator blank body of the modulator blank cover of fig. 3, 4 and 5;
the polysulfone plate 3 is of a square ring structure; a plurality of M2 polysulfone plate countersunk holes 301, M2 polysulfone plate threaded holes 302 and polysulfone plate thermistor wiring holes 303 corresponding to the thermistor mounting holes 202 are arranged on the square ring structure of the polysulfone plate 3; the hollow part in the middle of the polysulfone plate 3 is used for placing a semiconductor refrigerator (TEC) 4 with the same size as the hollow part; as shown in the schematic structural diagram of the polysulfone plate of fig. 6;
the red copper block 5 is in a cuboid shape, and red copper block bulges 502 with the same size are arranged at positions corresponding to the hollow parts in the middle of the red copper block 5 and the polysulfone plate 3 and are used for compacting a semiconductor refrigerator (TEC) 4; the red copper block 5 is provided with an M2 red copper block counter sunk hole 501 corresponding to the polysulfone plate 3; and a red copper block thermistor routing hole 504 corresponding to the thermistor mounting hole 202; copper block semiconductor refrigerator wiring holes 503 are arranged at two vertex angles of the copper block bulges 502; as shown in the structural schematic diagram of the copper block in fig. 7;
a square base groove 605 is formed in the bottom surface of the base 6, and a temperature control joint through hole 604 is formed in the rear surface of the base 6 and used for placing a temperature control end joint; a plurality of M4 base counter sunk holes 601 and base thermistor wiring holes 602 corresponding to the thermistor mounting holes 202 are formed in the top surface of the base 6, and base semiconductor refrigerator wiring holes 603 corresponding to the copper block semiconductor refrigerator wiring holes 503 are formed; the internal temperature control wiring design enables the temperature control modulator to be smaller and more attractive; as shown in the structural schematic diagrams of the base of fig. 8 and 9;
the LC resonance circuit board 8 comprises a copper electrode 801, a wedge-shaped crystal 802, a PCB circuit board 803, an SMA connector 804 for inputting signals and an adjustable inductor 805; the copper electrode 801 is tightly adhered to the wedge-shaped crystal 802, the wedge-shaped crystal 802 is adhered to the front surface of the PCB 803, the adjustable inductor 805 is welded to the front surface of the PCB 803, and the wedge-shaped crystal 802 and the adjustable inductor 805 form an LC resonant circuit together through the PCB 803; the SMA connector 804 is soldered on top of the PCB 803 and is used for connecting with a radio frequency driving input signal; the LC resonance circuit board 8 is fixed in the modulator blank body 2 through screws; the wedge-shaped crystal 802 corresponds to the modulator body light holes 203 on the two sides of the modulator blank body 2 after being fixed; as shown in the structural schematic diagrams of the LC resonant circuit assembly of fig. 10 and 11;
the base 6 is connected with a red copper block 5 through a screw, the upper part of the red copper block 5 is tightly connected with a hollow polysulfone plate 3 through a screw, the polysulfone plate 3 is connected with a modulator empty shell 2 through a screw, and the polysulfone thermal insulation shell 1 is buckled on the upper part of the modulator empty shell body 2.
Further, a thermistor is provided in the thermistor mounting hole 202, and the thermistor mounting hole 202 is sealed with a heat insulating material.
Further, indium foil is arranged between the upper surface of the semiconductor refrigerator (TEC) 4 and the modulator blank body 2, and between the lower surface of the semiconductor refrigerator (TEC) 4 and the copper block 5, and the indium foil is tightly attached.
Further, the modulator blank cover 7 is fixedly arranged on the front surface of the modulator blank body 2 by glue.
Further, the copper electrode 801 is tightly adhered to the wedge-shaped crystal 802 through ultraviolet glue.
Further, the end face of the wedge-shaped crystal 802 side is provided with an inclination angle of 4 degrees. As shown in fig. 11.
Further, a groove is formed in the back plate inside the modulator blank body. As shown in fig. 5.
Further, a square groove of the base is arranged on the bottom surface of the base. As shown in fig. 9.
After the assembly is completed, as shown in fig. 12 and 13.
Example 2
A reflection and transmission characteristic test method of a temperature control type resonance electro-optic phase modulator with low half-wave voltage comprises the following steps:
step 1, bonding a wedge-shaped crystal, an electrode and a PCB (printed circuit board), welding an SMA joint, an electrode wire and an adjustable inductor on the PCB, respectively welding wires of a semiconductor refrigerator (TEC) and a thermistor on a temperature control joint, and assembling the temperature control type resonant electro-optic phase modulator;
step 2, testing the reflection characteristic of the temperature control type resonant electro-optic phase modulator, namely measuring the optimal modulation frequency point and Q value of the modulator by using a vector network analyzer;
step 3, as shown in fig. 14, the input modulation port of the temperature-controlled resonant electro-optic phase modulator is connected to a vector network analyzer (Agilent 4395A), the start-stop frequency of the vector network analyzer is adjusted to enable a screen to display a reflection peak, the adjustable inductance is adjusted to enable the reflection peak to be the lowest, the reflectivity of the modulator to a radio frequency signal is indicated to be the lowest, the corresponding optimal resonance frequency is 10MHz, and the energy conversion efficiency is optimal at the moment. Experiments show that when the temperature control type resonant electro-optic phase modulator is at the optimal modulation frequency point of 10MHz, the bandwidth is 225kHz, and the Q value is 44.4, as shown in figure 15, so that the reflection characteristic test is completed.
Step 4, after obtaining the optimal modulation frequency point, testing the transmission characteristic of the temperature control type resonant electro-optic phase modulator, namely measuring the modulation depth and half-wave voltage of the modulator by using the MC cavity;
step 5, as in FIG. 14, a laser with a wavelength of 852nm is activated, used to stably output 852nm light and collimate the light beam.
Step 6, an Optical Isolator (OI) placed after the light after collimating the light beam is used to minimize back reflection; the use of a gram-thompson prism (GTP) placed behind it ensures that the purity of the linearly polarized light beam incident on the modulator is better than 1:100000.
Step 7, placing a temperature control type resonant electro-optic phase modulator at the back of the modulator, making light incident along the center of the parallel end face of the wedge-shaped crystal, connecting an SMA joint and a temperature control joint of the modulator with a microwave signal source and a temperature controller respectively, wherein the temperature controller is used for controlling the temperature of the crystal, and the microwave signal source adds a modulation signal to the modulator;
step 8, designing a group of matching lenses to match the emergent light beam to an MC cavity, and enabling the transmitted light beam of the MC cavity to enter a common detector (PD);
and 9, turning on the microwave signal source, setting the amplitude of the signal source and the resonant frequency corresponding to the modulator, outputting, changing the output amplitude, and measuring the change relation of the transmission peak signal along with the amplitude of the microwave signal by using PD. When the amplitude of the microwave signal is loaded so that the main carrier peak height of the MC transmission peak is consistent with the peak height of the positive and negative primary sidebands, the modulation depth is 1.435, and the relation result of the modulation depth of the measured modulator along with the amplitude of the microwave signal is shown in fig. 16. From experimental results, the temperature control type resonant electro-optic phase modulator has an optimal resonant frequency of 10MHz, a modulation depth of 1.435 under the drive of a radio frequency signal with a peak-to-peak value of 8V, and a corresponding half-wave voltage of 13.38V@852nm@10MHz; as shown in fig. 16, for the 10MHz frequency, if the laser wavelengths were 671nm, 795nm, 1064nm, respectively, the required driving voltage peaks at 1.435 modulation depth would be 6.34V, 7.5V, 10.4V, respectively. The transmission characteristic test is completed.
What is not described in detail in the present specification belongs to the prior art known to those skilled in the art. While the foregoing describes illustrative embodiments of the present invention to facilitate an understanding of the present invention by those skilled in the art, it should be understood that the present invention is not limited to the scope of the embodiments, but is to be construed as protected by the accompanying claims insofar as various changes are within the spirit and scope of the present invention as defined and defined by the appended claims.
Claims (6)
1. A temperature control type resonance electro-optic phase modulator with low half-wave voltage is characterized in that: the device comprises a polysulfone thermal insulation shell (1), a modulator empty shell body (2), a polysulfone plate (3), a semiconductor refrigerator (4), a red copper block (5), a base (6), a modulator empty shell cover (7) and an LC resonance circuit board (8);
the polysulfone thermal insulation shell (1) is of a hollow cuboid structure without a bottom surface; the top surface of the polysulfone heat-insulating shell (1) is provided with a polysulfone heat-insulating shell SMA joint through hole (101), and two side surfaces of the polysulfone heat-insulating shell (1) are respectively provided with a polysulfone heat-insulating shell light-transmitting hole (102);
the modulator empty shell body (2) and the modulator empty shell cover (7) form a hollow cuboid structure together; the modulator empty cover (7) is arranged on the front surface of the modulator empty body (2), a circle of protrusions are arranged on the inner side of the modulator empty cover (7), and the modulator empty cover (7) is clamped on the modulator empty body (2) through the protrusions; the centers of two side surfaces of the modulator blank body (2) are respectively provided with a modulator body light-passing hole (203), and the modulator body light-passing holes (203) correspond to the polysulfone heat-insulation shell light-passing holes (102); a modulator body SMA joint through hole (204) is arranged at the center of the top of the modulator blank body (2) and corresponds to the polysulfone heat-insulating shell SMA joint through hole (101); a plurality of M2 modulator threaded holes (201) are formed in the modulator blank body (2) and used for fixing an LC resonance circuit board (8), and thermistor mounting holes (202) are formed in the bottom of the modulator blank body (2);
the polysulfone plate (3) is of a square ring structure; a square ring structure of the polysulfone plate (3) is provided with a plurality of M2 polysulfone plate countersunk holes (301) and M2 polysulfone plate threaded holes (302), and polysulfone plate thermistor wiring holes (303) corresponding to the thermistor mounting holes (202); the hollow part in the middle of the polysulfone plate (3) is used for placing a semiconductor refrigerator (4) with the same size as the hollow part;
the red copper block (5) is in a cuboid shape, and red copper block bulges (502) with the same size are arranged at positions corresponding to the hollow parts in the middle of the red copper block (5) and the polysulfone plate (3) and are used for compacting the semiconductor refrigerator (4); a sunk hole (501) of the M2 red copper block corresponding to the polysulfone plate (3) is arranged on the red copper block (5); and a red copper block thermistor routing hole (504) corresponding to the thermistor mounting hole (202); copper block semiconductor refrigerator wiring holes (503) are formed in two vertex angles of the copper block bulges (502);
a square base groove (605) is formed in the bottom surface of the base (6), and a temperature control joint through hole (604) is formed in the rear surface of the base (6) and used for placing a temperature control end joint; a plurality of M4 base countersunk holes (601) and base thermistor wiring holes (602) corresponding to the thermistor mounting holes (202) are formed in the top surface of the base (6), and base semiconductor refrigerator wiring holes (603) corresponding to the copper block semiconductor refrigerator wiring holes (503);
the LC resonance circuit board (8) comprises a copper electrode (801), a wedge-shaped crystal (802), a PCB circuit board (803), an SMA connector (804) for inputting signals and an adjustable inductor (805);
the copper electrode (801) is tightly adhered to the wedge-shaped crystal (802) through ultraviolet glue, the wedge-shaped crystal (802) is adhered to the front surface of the PCB circuit board (803), the adjustable inductor (805) is welded to the front surface of the PCB circuit board (803), and the wedge-shaped crystal (802) and the adjustable inductor (805) form an LC resonant circuit together through the PCB circuit board (803); the SMA connector (804) is welded on the top of the PCB (803) and is used for connecting a radio frequency driving input signal; the LC resonance circuit board (8) is fixed in the modulator empty shell body (2) through screws; the wedge-shaped crystal (802) corresponds to the modulator body light through holes (203) on the two side surfaces of the modulator blank body (2) after being fixed;
the novel heat-insulating modulator is characterized in that a red copper block (5) is connected to the base (6) through a screw, a hollow polysulfone plate (3) is tightly connected to the upper side of the red copper block (5) through a screw, a modulator blank (2) is connected to the polysulfone plate (3) through a screw, and the polysulfone heat-insulating shell (1) is buckled on the upper portion of the modulator blank body (2).
2. A low half-wave voltage temperature controlled resonant electro-optic phase modulator according to claim 1, wherein: a thermistor is provided in the thermistor mounting hole (202), and the thermistor mounting hole (202) is sealed with a heat insulating material.
3. A low half-wave voltage temperature controlled resonant electro-optic phase modulator according to claim 1, wherein: indium foils are respectively arranged between the upper surface of the semiconductor refrigerator (4) and the modulator empty shell body (2) and between the lower surface of the semiconductor refrigerator (4) and the copper block (5), and the indium foils are tightly attached.
4. A low half-wave voltage temperature controlled resonant electro-optic phase modulator according to claim 1, wherein: the modulator empty cover (7) is fixedly arranged on the front surface of the modulator empty body (2) by using glue.
5. A low half-wave voltage temperature controlled resonant electro-optic phase modulator according to claim 1, wherein: the copper electrode (801) is tightly adhered to the wedge-shaped crystal (802) through ultraviolet glue.
6. A low half-wave voltage temperature controlled resonant electro-optic phase modulator according to claim 1, wherein: the end face of one side of the wedge-shaped crystal (802) is provided with an inclination angle of 4 degrees.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310557375.7A CN116560117A (en) | 2023-05-17 | 2023-05-17 | Temperature control type resonant electro-optic phase modulator with low half-wave voltage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310557375.7A CN116560117A (en) | 2023-05-17 | 2023-05-17 | Temperature control type resonant electro-optic phase modulator with low half-wave voltage |
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| CN116560117A true CN116560117A (en) | 2023-08-08 |
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|---|---|---|---|
| CN202310557375.7A Pending CN116560117A (en) | 2023-05-17 | 2023-05-17 | Temperature control type resonant electro-optic phase modulator with low half-wave voltage |
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| Country | Link |
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| CN (1) | CN116560117A (en) |
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- 2023-05-17 CN CN202310557375.7A patent/CN116560117A/en active Pending
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