CN116555885A - Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method - Google Patents
Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method Download PDFInfo
- Publication number
- CN116555885A CN116555885A CN202310536092.4A CN202310536092A CN116555885A CN 116555885 A CN116555885 A CN 116555885A CN 202310536092 A CN202310536092 A CN 202310536092A CN 116555885 A CN116555885 A CN 116555885A
- Authority
- CN
- China
- Prior art keywords
- growth
- crystal
- tank
- crystal growth
- gradient
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 154
- 238000002109 crystal growth method Methods 0.000 title abstract description 5
- 239000007788 liquid Substances 0.000 claims abstract description 69
- 239000011521 glass Substances 0.000 claims abstract description 43
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims abstract description 33
- 229910052805 deuterium Inorganic materials 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 33
- 230000002572 peristaltic effect Effects 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-ZSJDYOACSA-N Heavy water Chemical compound [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000001105 regulatory effect Effects 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 3
- 238000005485 electric heating Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 3
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 abstract description 2
- 235000019796 monopotassium phosphate Nutrition 0.000 description 17
- 239000000243 solution Substances 0.000 description 13
- 230000008859 change Effects 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/14—Phosphates
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a gradient deuterium-doped DKDP crystal growth device and a DKDP crystal growth method, the device comprises a constant temperature liquid supply device, a peristaltic pump and a crystal growth device, the crystal growth device comprises a shell, a constant temperature water tank is arranged in the shell, a temperature control device II is arranged at the bottom of the constant temperature water tank, a growth tank frame is arranged at the top of the shell, a motor is vertically arranged above the growth tank frame, a vertical rotating shaft is in driving connection below the motor, the bottom of the rotating shaft extends downwards into the shell, a crystal frame is arranged at the bottom end of the rotating shaft, a growth tank is arranged in the constant temperature water tank, the crystal frame is positioned in the growth tank, water or heavy water is continuously added through the peristaltic pump during crystal growth, when crystals grow in a cylindrical glass tube in an oriented mode, a certain deuterium concentration gradient is formed, the deuterium content of a certain deuterium concentration varies along the crystal growth direction, the crystal growth quantity can be accurately calculated, and the transmission rate of the peristaltic pump is controlled, and the deuterium content varies uniformly.
Description
Technical Field
The invention relates to a gradient deuterium-doped DKDP crystal growth device and a DKDP crystal growth method, and belongs to the technical field of aqueous solution crystal growth.
Background
At present, potassium dihydrogen phosphate (chemical formula KH) 2 PO 4 KDP for short) and deuterides thereof (formula K (D) X H 1-X ) 2 PO 4 Simply called DKDP) crystal is used as nonlinear and electrooptical crystal with good performance, has the advantages of high transmittance, wide transmission band, low half-wave voltage, larger electrooptical coefficient, good optical uniformity and the like, and is widely applied to the laser field. Inertial confinement nuclear fusion (Inertial Confinement Fusion, ICF for short) is considered to be one of the important ways to solve the human energy problem in the 21 st century. The strong laser frequency conversion crystal is an important optical element of a high-power laser in an ICF system, and the KDP/DKDP crystal has the characteristic of easy obtaining of large size and is the only nonlinear optical crystal which can be applied to ICF devices at present. The large-caliber KDP crystal is mainly used as an electro-optical switch and a frequency doubling device, and the large-caliber DKDP crystal is mainly used as a tripler device.
In ICF, high brightness, high coherence lasers can significantly affect the interaction of the laser with the target pellet, inducing instability in the laser-plasma interaction. Thus, a wider spectral width of the laser is required to achieve lower temporal coherence. For example, when a broadband low-time coherent light such as super-radiated light is used as an ICF driving seed source, parameter instability in the interaction of laser and plasma can be effectively restrained. The super-radiation optical frequency doubling can realize high-efficiency frequency doubling by utilizing 15% D class I DKDP crystals through foldback point matching. However, the frequency tripling process requires a DKDP crystal with a gradient change in refractive index, i.e., a gradient change in deuterium content, to achieve efficient frequency conversion. Through theoretical simulation, after class II phase matching DKDP crystals with the thickness of 80mm and the gradient of 10% doped deuterium are mixed, the frequency triple bandwidth can reach 2.2nm, the conversion efficiency is close to 80%, but no class II phase matching DKDP crystals with the gradient change of 10% of deuterium content are reported.
Disclosure of Invention
In order to solve the technical defects, the invention provides a gradient deuterium-doped DKDP crystal growth device and a DKDP crystal growth method, which can grow class II phase-matched DKDP crystals with deuterium content gradient change of 10%, and realize deuterium content gradient change along class II direction.
The invention is realized by the following scheme:
the gradient deuterium doped DKDP crystal growth device is characterized in that: the device comprises a constant temperature liquid supply device, a peristaltic pump and a crystal growth device, wherein the constant temperature liquid supply device, the peristaltic pump and the crystal growth device are communicated through pipelines, and the constant temperature liquid supply device comprises a liquid storage tank for storing liquid and a temperature control device I for adjusting the temperature of the liquid in the liquid storage tank; the crystal growth device comprises a shell, a constant-temperature water tank is arranged inside the shell, a temperature control device II is arranged at the bottom of the constant-temperature water tank, an growth tank frame is arranged at the top of the shell, a motor is vertically arranged above the growth tank frame, a vertical rotating shaft is connected below the motor in a driving mode, the bottom of the rotating shaft downwards extends into the shell, a crystal frame is arranged at the bottom end of the rotating shaft, a growth tank is arranged in the constant-temperature water tank, the top end of the growth tank is clamped on the growth tank frame, the crystal frame is positioned in the growth tank, a pipeline of a peristaltic pump is communicated with the growth tank, and a heating rod, a thermometer and a circulating water pump are arranged between the constant-temperature water tank and the growth tank.
According to the invention, preferably, the crystal frame comprises a lower bottom plate, a seed crystal groove is arranged on the lower bottom plate, a cylindrical glass tube for limiting crystal growth is arranged on the seed crystal groove, two ends of the cylindrical glass tube are hollow, the bottom end of the cylindrical glass tube is fixed with the lower bottom plate, a side rod is vertically arranged above the edge of the lower bottom plate, the top of the side rod is connected with an upper bottom plate positioned above the cylindrical glass tube, the top of the glass tube is not contacted with the upper bottom plate, the upper bottom plate and the lower bottom plate are oppositely arranged, and the bottom end of the rotating shaft is connected on the upper bottom plate.
According to the invention, a seed crystal is arranged in the seed crystal groove, the seed crystal is a cylindrical KDP crystal with the diameter of 8-15mm and the height of 4-10mm, the seed crystal direction is the II-type phase matching direction of the KDP, or is the z direction, the a/b direction, the I-type phase matching direction or [110 ] of the KDP crystal]Ba (NO) of crystal orientation 3 ) 2 And (5) a crystal.
According to the present invention, preferably, the inner diameter of the glass tube is larger than the diameter of the seed groove, the inner diameter of the glass tube is in the range of 15-50mm, the height is in the range of 80-110mm, and the distance between the top of the glass tube and the bottom of the upper bottom plate is 20-40mm.
According to the invention, the heating rod, the thermometer and the circulating water pump are fixed on the growth tank frame, and the motor is fixed above the growth tank frame through the supporting rod.
According to the invention, the constant temperature liquid supply device comprises a shell, the top of the liquid storage tank is opened and arranged in the shell, a round hole is formed in the center of the top of the shell, a silica gel plug with the lower part blocking the top opening of the liquid storage tank is embedded in the round hole, and the liquid inlet hose penetrates through the silica gel plug and stretches into the liquid storage tank.
According to the invention, the temperature control device I and the temperature control device II comprise a controller, an electric heating rod and a temperature sensor.
The temperature control device I and the temperature control device II are both in the prior art.
The method for growing DKDP crystals by using the gradient deuterium-doped DKDP crystal growing device comprises the following steps:
and (3) placing KDP seed crystals in the seed crystal groove, continuously conveying the liquid with the temperature regulated in the liquid storage groove of the constant temperature liquid supply device into the growth groove of the crystal growth device through a peristaltic pump, enabling the temperature of the liquid flowing in to be higher than the temperature of the growth solution in the growth groove, regulating the input quantity of the liquid in the crystal growth process, limiting the crystal to grow in the glass tube in a directional mode along the II-type phase matching direction, and finally enabling deuterium content in one single crystal to be distributed in a gradient mode.
According to the invention, preferably, the liquid in the growth tank is firstly overheated at 15-20 ℃ above the saturation temperature, after the temperature is reduced and the cap is pulled out, the seed crystal starts to recover until the crystal completely grows to the bottom of the glass tube, the crystal grows into a uniform-speed constant-section growth stage, a peristaltic pump is started, and the flow rate, the supersaturation degree and the cooling rate of the peristaltic pump are calculated and adjusted, so that the gradient deuterium doped DKDP crystal is grown.
According to a preferred embodiment of the invention, the liquid in the thermostatic liquid supply device is water, heavy water or ADP solution.
The beneficial effects of the invention are as follows:
according to the gradient deuterium-doped DKDP crystal growth device, water or heavy water is continuously added through the peristaltic pump during crystal growth, when crystals grow in a cylindrical glass tube in a directional mode, deuterium content of a growth solution is uniformly changed, a certain deuterium concentration gradient is formed in the crystals, the cylindrical glass tube plays a role in limiting the crystal growth direction, the deuterium content is changed along the crystal growth direction, the section of the cylindrical glass tube is consistent, the crystal growth amount can be accurately calculated, the transmission rate of the peristaltic pump is controlled, the deuterium content is uniformly changed, and finally the grown crystals are in a cylindrical shape. From this, DKDP crystals with a gradient of deuterium content along the class ii phase matching direction of 20mm x 80mm can be cut. When other solutions are in the growth tank, the gradient crystal of the liquid in the liquid storage tank can be doped by using the solution as a substrate, and the gradient change direction can be determined by the directions of the seed crystal and the glass tube.
Drawings
FIG. 1 is a schematic view of the structure of the device of the present invention;
FIG. 2 is a schematic view of a constant temperature liquid supply device according to the present invention;
FIG. 3 is a schematic diagram of the peristaltic pump of the present invention;
FIG. 4 is a schematic view showing the structure of a crystal growing apparatus of the present invention;
FIG. 5 is a schematic view of the structure of the support frame of the present invention;
in the figure: 100-constant temperature liquid supply device; 110-a temperature control device I; 120-a liquid storage tank; 200-peristaltic pump; 220-piping; 300-a crystal growth apparatus; 310-growing a trough rack; 320-a temperature control device II; 321-heating bars; 322-thermometer; 323-a circulating water pump; 330-motor; 340-a constant temperature water tank; 400-crystal rack; 410-a lower plate; 420-upper base plate; 430-side bars; 440-rotation axis; 450-glass tube.
Detailed Description
The invention will be described in further detail with reference to the accompanying drawings, but the scope of the invention is not limited thereto.
Example 1
The gradient deuterium doped DKDP crystal growth device has a structure shown in figures 1-5, and comprises a constant temperature liquid supply device 100, a peristaltic pump 200 and a crystal growth device 300, wherein the constant temperature liquid supply device 100, the peristaltic pump 200 and the crystal growth device 300 are communicated through a pipeline 220, and the constant temperature liquid supply device 100 comprises a liquid storage tank 120 for storing liquid and a temperature control device I110 for adjusting the temperature of the liquid in the liquid storage tank; the crystal growth device 300 comprises a shell, a constant temperature water tank 340 is arranged inside the shell, a temperature control device II 320 is arranged at the bottom of the constant temperature water tank 340, a growth tank frame 310 is arranged at the top of the shell, a motor 330 is vertically arranged above the growth tank frame 310, a vertical rotating shaft 440 is connected below the motor 330 in a driving manner, the bottom of the rotating shaft 440 extends downwards into the shell, a crystal frame 400 is arranged at the bottom end of the rotating shaft, a growth tank is arranged in the constant temperature water tank 340, the top end of the growth tank is clamped on the growth tank frame 310, the crystal frame 400 is positioned in the growth tank, a pipeline 220 of a peristaltic pump 200 is communicated with the growth tank, and a heating rod 321, a thermometer 322 and a circulating water pump 323 are arranged between the constant temperature water tank and the growth tank.
The crystal frame 400 comprises a lower base plate 410, a seed crystal groove is formed in the lower base plate 410, a cylindrical glass tube 450 for limiting crystal growth is arranged on the seed crystal groove, two ends of the cylindrical glass tube 450 are hollow, the bottom end of the cylindrical glass tube is fixed with the lower base plate 410, a side rod 430 is vertically arranged above the edge of the lower base plate 410, the top of the side rod 430 is connected with an upper base plate 420 positioned above the cylindrical glass tube, the top of the cylindrical glass tube 450 is not contacted with the upper base plate 420, the upper base plate 420 and the lower base plate 410 are oppositely arranged, and the bottom end of a rotating shaft 440 is connected to the upper base plate. A seed crystal is arranged in the seed crystal groove, the seed crystal is a cylindrical KDP crystal with the diameter of 8-15mm and the height of 4-10mm, the seed crystal direction is the II-type phase matching direction of the KDP, or is the z direction, the a/b direction, the I-type phase matching direction or the Ba (NO) of the KDP crystal 3 ) 2 Crystalline [110 ]]And (5) crystal orientation.
The inner diameter of the cylindrical glass tube 450 is larger than the diameter of the seed groove, the inner diameter range of the glass tube is 20mm, the height range is 100mm, and the distance between the top of the glass tube and the bottom of the upper bottom plate is 30mm.
The heating rod 321, the thermometer 322 and the circulating water pump 323 are fixed on the growth tank 310, and the motor 330 is fixed above the growth tank 310 through a supporting rod.
The constant temperature liquid supply device comprises a shell, the top of the liquid storage tank is open and is arranged in the shell, a round hole is formed in the center of the top of the shell, a silica gel plug with the lower part blocking the top opening of the liquid storage tank is embedded in the round hole, and the liquid inlet hose penetrates through the silica gel plug and stretches into the liquid storage tank.
The temperature control device I and the temperature control device II both comprise a controller, an electric heating rod and a temperature sensor.
Example 2
The method for growing DKDP crystals using the gradient deuterium doped DKDP crystal growth apparatus of example 1 is as follows:
firstly, a KDP seed crystal is placed in a seed crystal groove, then water with the temperature adjusted in a liquid storage groove of a constant temperature liquid supply device is continuously conveyed into a growth groove of a crystal growth device through a peristaltic pump, so that the inflow water temperature is higher than the temperature of DKDP growth solution in the growth groove, the input quantity of the water is adjusted in the crystal growth process, and therefore crystals are limited in a glass tube to grow in a directional mode along a II-type phase matching direction, and finally deuterium content in one single crystal is distributed in a gradient mode.
The liquid in the growth tank is firstly overheated at 15 ℃ above the saturation temperature, after the cap is pulled out after the temperature is reduced, the seed crystal starts to recover until the crystal completely grows to the bottom of the glass tube, the crystal growth enters a uniform-speed constant-section growth stage, a peristaltic pump is started, and the flow speed, the supersaturation degree and the cooling rate of the peristaltic pump are calculated and adjusted, so that the gradient deuterium doped DKDP crystal is grown.
When crystals grow, the hose enables liquid in the liquid storage tank to enter the growth solution through the peristaltic pump and the rubber plug at the top of the growth tank, and the joint of the hose and the rubber plug is sealed to prevent the liquid from evaporating or being polluted by the environment. When the crystal grows, the motor drives the supporting frame to rotate, so that the liquid entering through the hose is uniformly mixed with the growth solution. After the seed crystal in the II-type phase matching direction is recovered, the bottom of the glass tube is fully paved at the beginning of growth, and a peristaltic pump device is operated at the moment, so that the deuterium content is changed when crystals grow at a uniform speed and orientation. The glass tube limits the crystal to grow along the II-type phase matching direction, namely, along the direction of the glass tube, and when the supersaturation degree is regulated to be 4.8 ℃, the crystal growth speed is 4 mm/day.
Example 3
The gradient deuterium doped DKDP crystal growth apparatus described in example 1 is different in that:
the inner diameter of the cylindrical glass tube 450 is larger than the diameter of the seed groove, the inner diameter of the glass tube is 80mm, the height is 130mm, and the distance between the top of the glass tube and the bottom of the upper bottom plate is 40mm.
Example 4
The same growth method as described in example 2 is different in that:
firstly, a KDP seed crystal is placed in a seed crystal groove, then ADP solution with the temperature adjusted in a liquid storage groove of a constant temperature liquid supply device is continuously conveyed into a growth groove of a crystal growth device through a peristaltic pump, so that the temperature of the inflowing ADP solution is higher than that of the KDP growth solution in the growth groove, the input quantity of the ADP solution is adjusted in the crystal growth process, and therefore crystals are limited in a glass tube to grow in a directional mode along a II-type phase matching direction, and finally the ADP crystal content in one ADP/KDP mixed crystal is distributed in a gradient mode.
Example 5
The same growth method as described in example 2 is different in that:
firstly, a KDP seed crystal is placed in a seed crystal groove, then water with the temperature regulated in a liquid storage groove of a constant temperature liquid supply device is continuously conveyed into a growth groove of a crystal growth device through a peristaltic pump, so that the inflow water temperature is higher than the temperature of DKDP growth solution in the growth groove, the input quantity of the water is regulated in the crystal growth process, and therefore crystals are limited in a glass tube to grow in a directional manner along the [100] direction or the [101] direction of the KDP crystal, and finally deuterium content in one single crystal is distributed in a gradient manner and is consistent in a growth cross section.
The foregoing is merely a preferred embodiment of the present patent, and it should be noted that modifications and substitutions will now occur to those skilled in the art without departing from the technical principles of the present patent, and such modifications and substitutions should also be considered to be within the scope of the present patent.
Claims (10)
1. The gradient deuterium doped DKDP crystal growth device is characterized in that: the device comprises a constant temperature liquid supply device, a peristaltic pump and a crystal growth device, wherein the constant temperature liquid supply device, the peristaltic pump and the crystal growth device are communicated through pipelines, and the constant temperature liquid supply device comprises a liquid storage tank for storing liquid and a temperature control device I for adjusting the temperature of the liquid in the liquid storage tank; the crystal growth device comprises a shell, a constant temperature water tank is arranged inside the shell, a temperature control device II is arranged at the bottom of the constant temperature water tank, a growth tank frame is arranged at the top of the shell, a motor is vertically arranged above the growth tank frame, a vertical rotating shaft is connected below the motor in a driving mode, the bottom of the rotating shaft downwards extends into the shell and is connected with the center of the top of a supporting top plate, a crystal frame is arranged at the bottom end of the rotating shaft, a growth tank is arranged in the constant temperature water tank, the top end of the growth tank is clamped on the growth tank frame, the crystal frame is located in the growth tank, a pipeline of a peristaltic pump is communicated with the growth tank, and a heating rod, a thermometer and a circulating water pump are arranged between the constant temperature water tank and the growth tank.
2. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein the crystal frame comprises a lower plate, a seed crystal groove is provided on the lower plate, a cylindrical glass tube for limiting crystal growth is provided on the seed crystal groove, two ends of the cylindrical glass tube are hollow, the bottom end is fixed with the lower plate, a side rod is vertically provided above the edge of the lower plate, the top of the side rod is connected with an upper plate above the cylindrical glass tube, the top of the glass tube is not contacted with the upper plate, the upper plate and the lower plate are arranged opposite, and the bottom end of the rotating shaft is connected with the upper plate.
3. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein seed crystals are arranged in the seed crystal groove, the seed crystals are cylindrical KDP crystals with the diameter of 8-15mm and the height of 4-10mm, the seed crystal direction is the II-type phase matching direction of KDP, or is the z direction, the a/b direction, the I-type phase matching direction or Ba (NO 3 ) 2 Crystalline [110 ]]And (5) crystal orientation.
4. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein the inner diameter of the glass tube is larger than the diameter of the seed tank, the inner diameter of the glass tube is 15-50mm, the height is 80-110mm,
the distance between the top of the glass tube and the bottom of the upper bottom plate is 20-40mm.
5. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein the heating rod, thermometer, circulating water pump are fixed on the growth cage, and the motor is fixed above the growth cage by the support rod.
6. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein: the constant temperature liquid supply device comprises a shell, the top of the liquid storage tank is open and is arranged in the shell, a round hole is formed in the center of the top of the shell, a silica gel plug with the lower part blocking the top opening of the liquid storage tank is embedded in the round hole, and the liquid inlet hose penetrates through the silica gel plug and stretches into the liquid storage tank.
7. The gradient deuterium doped DKDP crystal growth apparatus of claim 1, wherein: the temperature control device I and the temperature control device II comprise a controller, an electric heating rod and a temperature sensor.
8. The method for growing DKDP crystals by using the gradient deuterium-doped DKDP crystal growing device comprises the following steps:
and (3) placing KDP seed crystals in the seed crystal groove, continuously conveying the liquid with the temperature regulated in the liquid storage groove of the constant temperature liquid supply device into the growth groove of the crystal growth device through a peristaltic pump, enabling the temperature of the liquid flowing in to be higher than the temperature of the growth solution in the growth groove, regulating the input quantity of the liquid in the crystal growth process, limiting the crystal to grow in the glass tube in a directional mode along the II-type phase matching direction, and finally enabling deuterium content in one single crystal to be distributed in a gradient mode.
9. The method of claim 8, wherein the liquid in the growth tank is firstly overheated at 15-20 ℃ above the saturation temperature, after the cap is pulled out after the temperature is reduced, the seed crystal starts to recover until the crystal completely grows up to the bottom of the glass tube, the crystal growth enters a uniform-speed constant-section growth stage, a peristaltic pump is started, and the flow rate, the supersaturation degree and the temperature reduction rate of the peristaltic pump are calculated and adjusted, so that the gradient deuterium doped DKDP crystal is grown.
10. The method of claim 8, wherein the liquid in the constant temperature liquid supply device is water, heavy water or ADP solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310536092.4A CN116555885A (en) | 2023-05-12 | 2023-05-12 | Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310536092.4A CN116555885A (en) | 2023-05-12 | 2023-05-12 | Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116555885A true CN116555885A (en) | 2023-08-08 |
Family
ID=87489433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310536092.4A Pending CN116555885A (en) | 2023-05-12 | 2023-05-12 | Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116555885A (en) |
-
2023
- 2023-05-12 CN CN202310536092.4A patent/CN116555885A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103361712B (en) | A kind of carrier crystal stand for the growth of Large KDP crystalloid and growth method | |
| CN100585028C (en) | Inverse-conical dropped bottom type crystal growth apparatus | |
| CN103243380B (en) | The brilliant preparation method of horizontal orientation district clinkering of large size Re:YAG series laser crystal | |
| CN110408984B (en) | High-quality rapid growth control method for crystal | |
| CN106637381A (en) | High-precision temperature control system for crystal growth process | |
| CN103147116A (en) | Continuous culture and filtration system for crystals | |
| CN111733448B (en) | Device and method for adjusting shouldering morphology in indium antimonide crystal growth process | |
| CN104532353A (en) | Chromium-doped zinc selenide monocrystal Bridgman growth device and method | |
| CN116555885A (en) | Gradient deuterium-doped DKDP crystal growth device and DKDP crystal growth method | |
| Sankaranarayanan | Growth of large size< 1 1 0> benzophenone crystal using uniaxially solution-crystallization method of Sankaranarayanan–Ramasamy (SR) | |
| CN112126971A (en) | Crystal growth process control method based on solution concentration online estimation | |
| CN108411366B (en) | Device and method for growing mercurous halide monocrystal | |
| CN203530480U (en) | Equipment for growing sapphire single crystals | |
| Wu et al. | Numerical simulation of temperature field optimization to enhance nitrogen transfer in GaN crystal growth by the Na-flux method | |
| CN104695015A (en) | Method for adjusting temperature field structure of growing CaF2 crystals, and apparatus thereof | |
| CN109695060B (en) | Dynamic growth device and method for large-size perovskite single crystal | |
| CN205443506U (en) | Small-size micro-fluctuation cooling water system for sapphire crystal growth laboratory | |
| CN104849932A (en) | Device and method for converting sideband laser and random laser | |
| CN1254569C (en) | Combined crucible rotating and molten salt pulling method for growing RE3+: KGd (WO4)2 laser crystal | |
| CN113046820A (en) | KDP crystal one-dimensional reciprocating motion growth method | |
| RU2681641C1 (en) | Method of growing lithium tribolate crystal (options) | |
| CN114197044A (en) | Method and apparatus for growing perovskite single crystal | |
| Wu et al. | Crystal growth and frequency conversion of BaMgF4 single crystal by temperature gradient technique | |
| CN108642558B (en) | Annular ladder base and system for spontaneous nucleation growth of organic crystals | |
| CN105780124A (en) | Laser-assisted III-V group crystal growth device and method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |