CN116547792A - Device for cleaning edge of wafer by using plasma - Google Patents

Device for cleaning edge of wafer by using plasma Download PDF

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Publication number
CN116547792A
CN116547792A CN202180029169.8A CN202180029169A CN116547792A CN 116547792 A CN116547792 A CN 116547792A CN 202180029169 A CN202180029169 A CN 202180029169A CN 116547792 A CN116547792 A CN 116547792A
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China
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wafer
upper insulating
active surface
ring
area
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CN202180029169.8A
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Chinese (zh)
Inventor
何敏博
林军
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Huawei Technologies Co Ltd
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Abstract

The application provides an apparatus for cleaning an edge of a wafer using a plasma, the apparatus comprising: the fixing assembly is used for bearing and fixing the passive surface of the wafer; the upper insulating assembly is located in an area on one side of an active surface of the wafer and used for protecting a core area of the active surface of the wafer, the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is located on the outer side of the insulating cover plate and connected with the insulating cover plate, the distance between the upper insulating ring and the active surface of the wafer is controllable, the upper insulating ring comprises a sealing ring, the sealing ring comprises a flexible component, and the flexible component is used for enabling the sealing ring to be in flexible contact with the active surface of the wafer. Through above-mentioned device, this application can realize effectively improving or avoid the wafer surface to form phenomenon such as metallic corrosion or metal precipitation to can strengthen the yields of wafer, and promote the wafer quality.

Description

Device for cleaning edge of wafer by using plasma Technical Field
The present application relates to the field of semiconductor manufacturing technology, and more particularly, to an apparatus for cleaning an edge of a wafer using plasma.
 Background
In the conventional semiconductor manufacturing technology, a wafer cleaning device (a conventional device for cleaning a wafer) is generally used to remove metal materials at 0-3mm near the edge (wafer extreme edge, WEE) of the wafer after depositing the metal layer, so as to avoid peeling, defects, and metal contamination during the subsequent manufacturing process.
Conventional wafer cleaning apparatus typically employ chlorine (Cl) 2 ) Or chlorine (Cl) 2 ) And boron trichloride (BCl) 3 ) As an etching gas for removing metal substances at the WEE, for example, aluminum, titanium nitride, titanium, tantalum nitride, tantalum, etc., but when the metal substances at the WEE are removed, the etching gas and corresponding reaction products are inevitably adsorbed to the inner region of the wafer, thereby causing wafer contamination and defect generation (defect), which affects the quality of the wafer in the subsequent manufacturing process and consequently detracts from the yield of the wafer.
Disclosure of Invention
The application provides a novel use plasma to wash device at wafer edge, through this belt cleaning device, this application can realize avoiding the inside region of wafer to adsorb etching gas and corresponding reaction product to can prevent that the wafer surface from forming metal corrosion or metal and separating out, avoid producing pollution and defect to the later process, can promote the wafer quality then, improve the yields of wafer.
In a first aspect, an apparatus for cleaning an edge of a wafer using a plasma is provided, comprising: the fixing assembly is used for bearing and fixing the passive surface of the wafer; the upper insulating assembly is located in an area on one side of an active surface of the wafer and used for protecting a core area of the active surface of the wafer, the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is located on the outer side of the insulating cover plate and connected with the insulating cover plate, the distance between the upper insulating ring and the active surface of the wafer is controllable, the upper insulating ring comprises a sealing ring, the sealing ring comprises a flexible component, and the flexible component is used for enabling the sealing ring to be in flexible contact with the active surface of the wafer.
It is understood that the flexible contact may be understood that the seal ring does not cause a scratch to the core region of the active side of the wafer when in contact therewith, or may cause an acceptable scratch to a certain extent.
Through above-mentioned wafer belt cleaning device, more specifically, through sealing ring and this flexible part in the device, this application can realize isolated etching gas and corresponding reaction product, and this application can also realize that the wafer is after leaving wafer belt cleaning device, when contacting the atmosphere, can not form metal corrosion or metal precipitation at its surface, can avoid producing pollution and defect to the later process to can avoid causing the influence to the subsequent manufacturing process wafer quality, and can also promote the yields of wafer.
With reference to the first aspect, in certain implementations of the first aspect, the flexible component includes: polytetrafluoroethylene, PTFE, material or a material doped with said PTFE.
Through the material, the sealing ring can be contacted with the core area of the active surface of the wafer without scraping or can cause the scraping within a certain acceptable degree.
With reference to the first aspect, in certain implementations of the first aspect, the PTFE material or PTFE-doped material has a hardness that is lower than the hardness of the wafer plating or the hardness of the wafer.
Through the material, the sealing ring can be contacted with the core area of the active surface of the wafer without scraping or can cause the scraping within a certain acceptable degree.
With reference to the first aspect, in certain implementation manners of the first aspect, the apparatus further includes: and the temperature control module is used for adjusting the temperature of the fixed component.
Through the temperature control function of the temperature control module, the application can realize that vapor and chlorine-containing substances generate gaseous hydrogen chloride under the condition of high temperature, and then the gaseous hydrogen chloride is pumped away in vacuum, so that residual chlorine components on the edge surface of the wafer are separated, corrosion or electrochemical reaction of a metal grid or other metal materials or other coatings after the level dry etching is avoided, and then the defects of the wafer are reduced and the yield of the wafer is improved.
With reference to the first aspect, in certain implementation manners of the first aspect, the apparatus further includes: a fluid conduit for delivering fluid from outside the device to inside the cavity of the device, wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
Through the device, chlorine-containing substances can be effectively prevented from remaining in the core area and the edge area of the wafer, so that corrosion or electrochemical reaction of a metal grid electrode or other metal materials or other plating layers after the bearing etching is avoided. Thereby reducing the defects of the wafer and improving the yield of the wafer.
With reference to the first aspect, in certain implementation manners of the first aspect, the apparatus further includes: and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of plasma entering the core area of the wafer from the edge of the wafer.
By means of the device, the distance that the plasma enters the core area of the passive surface of the wafer from the edge of the passive surface of the wafer can be controlled, and therefore the passive surface area of the wafer can be protected.
With reference to the first aspect, in certain implementation manners of the first aspect, the apparatus further includes: the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating plasma through electrification.
By the device, the plasma can be generated, so that the device can be used for cleaning the edge of the wafer.
In a second aspect, there is provided an apparatus for cleaning an edge of a wafer using a plasma, comprising: the fixing assembly is used for bearing and fixing the passive surface of the wafer; the upper insulating assembly is positioned in the area on one side of the active surface of the wafer and used for protecting the core area of the active surface of the wafer, and comprises an upper insulating ring and an insulating cover plate, wherein the upper insulating ring is positioned on the outer side of the insulating cover plate and connected with the insulating cover plate, and the distance between the upper insulating ring and the active surface of the wafer is controllable; and the temperature control module is used for adjusting the temperature of the fixed component.
Through the device, more specifically, through the temperature control module that the device includes, this application can realize utilizing vapor and chlorine-containing material to generate gaseous hydrogen chloride under the high temperature, is taken off by the vacuum subsequently to make the remaining chlorine composition in wafer edge surface break away from, avoid metal grid or other metal material or other cladding material to take place at corrosion or electrochemical reaction that the back arouses of level dry etch, and then reduce the defect of wafer and promote the yields of wafer.
With reference to the second aspect, in certain implementations of the second aspect, the apparatus further includes: a fluid conduit for delivering fluid from outside the device to inside the cavity of the device, wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
With reference to the second aspect, in certain implementations of the second aspect, the apparatus further includes: and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of plasma entering the core area of the wafer from the edge of the wafer.
By means of the device, the distance that the plasma enters the core area of the passive surface of the wafer from the edge of the passive surface of the wafer can be controlled, and therefore the passive surface area of the wafer can be protected.
With reference to the second aspect, in certain implementations of the second aspect, the apparatus further includes: the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating plasma through electrification.
By the device, the plasma can be generated, so that the device can be used for cleaning the edge of the wafer.
In a third aspect, an apparatus for cleaning an edge of a wafer using a plasma is provided, comprising: the fixing assembly is used for bearing and fixing the passive surface of the wafer; the upper insulating assembly is positioned in the area on one side of the active surface of the wafer and used for protecting the core area of the active surface of the wafer, and comprises an upper insulating ring and an insulating cover plate, wherein the upper insulating ring is arranged on the outer side of the insulating cover plate and connected with the insulating cover plate, and the distance between the upper insulating ring and the active surface of the wafer is controllable; a fluid conduit for delivering fluid from outside the device to inside the cavity of the device, wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
Through the device, the gaseous hydrogen chloride can be generated by utilizing the vapor and the chlorine-containing substances at high temperature, and then the gaseous hydrogen chloride is pumped away in vacuum, so that residual chlorine components on the edge surface of the wafer are separated, corrosion or electrochemical reaction of a metal grid or other metal materials or other plating layers after the bearing etching is avoided, and then the defects of the wafer are reduced, and the yield of the wafer is improved.
With reference to the third aspect, in certain implementations of the third aspect, the apparatus further includes: and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of plasma entering the core area of the wafer from the edge of the wafer.
By means of the device, the distance between the surface edge of the passive surface of the wafer and the core area of the passive surface of the wafer can be controlled, and therefore the lower surface area of the wafer can be protected.
With reference to the third aspect, in certain implementations of the third aspect, the apparatus further includes: the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating plasma through electrification.
By the device, the plasma can be generated, so that the device can be used for cleaning the edge of the wafer.
In a fourth aspect, a method for cleaning an edge of a wafer using a plasma is provided, comprising: opening an upper insulating assembly, and placing the upper insulating assembly into a wafer, wherein the upper insulating assembly is positioned in an area on one side of an active surface of the wafer, the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is positioned on the outer side of the insulating cover plate and connected with the insulating cover plate, the distance between the upper insulating ring and the active surface of the wafer is controllable, the upper insulating ring comprises a sealing ring, and the sealing ring comprises a flexible component which enables the sealing ring to be in flexible contact with the active surface of the wafer; a passive face carrying and holding the wafer; and closing the insulating cover plate, descending the upper insulating ring, and flexibly contacting the sealing ring with the active surface of the wafer.
Through above-mentioned technical scheme, this application can realize at the in-process of wasing the wafer edge, descends this upper insulating ring, makes the upper insulating ring and the active surface's of wafer core region flexible contact to realize sealedly, and isolated etching gas and other reaction product infiltration are to the active surface's of wafer core region's surface consequently, thereby avoid the pollution.
 Drawings
Fig. 1 is a schematic view of a conventional apparatus for cleaning an edge of a wafer using plasma.
Fig. 2 is a schematic diagram of a metal coating provided in the present application before and after chemical mechanical polishing.
Fig. 3 is a schematic structural view of an apparatus for cleaning an edge of a wafer using plasma according to the present application.
Fig. 4 is a schematic structural view of another apparatus for cleaning an edge of a wafer using plasma provided herein.
Fig. 5 is a schematic view of the steam generator provided in the present application after the steam generator is turned on.
 Detailed Description
An apparatus for cleaning an edge of a wafer using plasma is provided in the present application with reference to the accompanying drawings.
It should be understood that, in the embodiment of the present application, the active surface and the passive surface of the wafer refer to the front surface and the back surface of the wafer, and specifically refer to the surface with the device and the surface without the device of the wafer, which are described in detail herein.
It should also be understood that, in the embodiments of the present application, the core area of the wafer refers to the area except for the edge of the wafer that is referred to as the core area of the wafer, more specifically, may refer to the core area of the wafer including the device, or the most important area of the wafer, and the size of the core area of the wafer may be 147mm in diameter, where the specific size may be specified according to the specific needs, and this application is not limited specifically.
Fig. 1 is a schematic structural view showing a conventional apparatus for cleaning an edge of a wafer using plasma, and the specific structure is shown in fig. 1.
In the prior art wafer cleaning apparatus shown in FIG. 1, cl is typically used 2 Or Cl 2 +BCl 3 As an etching gas for removing metal substances from 0-3mm from WEE, for example, aluminum, titanium nitride, titanium, tantalum nitride, tantalum, and the like.
The wafer cleaning device mainly comprises the following main components:
an upper insulating assembly including an upper insulating ring and an insulating cover plate, wherein the insulating cover plate can be used to protect or cover a core region of an active surface of a wafer (wafer) from a plasma (plasma) entering the core region of the active surface of the wafer.
Specifically, the insulating cover plate can be used to cover the core region of the active face of wafer, thereby preventing plasma from reaching the core region of the active face of wafer from one side (upper region) of the active face of wafer, thereby causing surface damage to the core region of the active face of wafer.
It should be understood that the upper insulating member is located at an active surface side region of wafer, and in particular, it can be understood that the upper insulating member is located above the fixing member.
The width of the upper insulating ring can be adjusted according to actual needs, and the distance between the upper insulating ring and the active surface of the wafer is controllable, so that the distance from the edge of the active surface of the wafer to the core area of the active surface of the wafer can be controlled by using the plasma.
It should be understood that the upper insulating ring is located at the outer side of the insulating cover plate and is connected with the insulating cover plate, and specifically, the connection mode may be that the upper insulating ring is connected with the insulating cover plate through a sealing gasket or a sealing ring, and the connection mode is not specifically limited in this application.
The device also includes a lower insulating ring, typically of a fixed width, that can be used to control the distance of the plasma from the edge of the passive face of the wafer into the core region of the passive face of the wafer.
An electrode assembly including an upper electrode located in an active surface side region of wafer and a lower electrode located in a passive surface side region of wafer, which can be used for energization to generate plasma.
Wherein the electrode assembly is positioned outside the upper insulating assembly and the lower insulating ring, and the specific structure is shown in fig. 1.
And the fixing component can be used for bearing and fixing the passive surface of the wafer and is positioned in the area on one side of the passive surface of the wafer.
Specifically, the fixing component may be a wafer electrostatic chuck electrode (wafer chuck electrode), which uses electrostatic chuck principle to firmly chuck or fix wafer, so as to facilitate wafer edge cleaning.
It should be understood that the fixing assembly may also be other fittings that can be used to fix the wafer, which is not particularly limited in this application.
It will be appreciated that the plasma used to etch the metallic species at the WEE of wafer will be filled into the chamber of the apparatus, but the actual area of action of the plasma will be constrained or limited by the structure of the upper insulating ring, lower insulating ring and insulating cover plate, and therefore can be used to etch only the metallic species at the WEE of wafer.
It should be understood that, in the above-mentioned schematic structural diagram of the wafer cleaning device, the combined design of the upper insulating ring and the insulating cover plate can be used to cover and protect the core area of the active surface of the wafer, so as to avoid the etching gas filled in the machine from penetrating into the core area of the active surface of the wafer, which in turn causes surface damage of the core area of the wafer.
It should be noted that the upper insulating ring covers not all the wafer area, but the wafer area 0-3mm from WEE is exposed to etching gas and Plasma, and the middle area of the insulating cover plate of the device remains a fluid conduit for shielding gas, such as N 2 The shielding gas can be used to protect the core region of the active face of wafer from plasma as well as penetration and contamination by the etching gas. It will be appreciated that the fluid conduit is used to convey fluid from outside the device to inside the cavity of the device.
However, the above-mentioned wafer cleaning apparatus still has the following two disadvantages in the actual process production: 1): due to the convective and diffusive effects of the gases (including the shielding gas and the etching gas) themselves, the shielding gas does not prevent the etching gas and the corresponding reaction products from penetrating into the core region of the active face of wafer (see in particular the gas penetration schematic indicated by the four black arrows at the lower end of the upper insulating ring in fig. 1), which in turn causes the core region of the active face of wafer to adsorb part of the etching gas; 2): after etching (dry), the wafer's WEE adsorbs the residual etching gas and there is little MCl x And the reaction product (M indicates a metal).
Due to the two defects, after the wafer passes through the Bevelderyetch, when the wafer contacts the atmosphere, phenomena such as metal corrosion or metal precipitation and the like can occur on the surface of the wafer, so that the yield and the quality of the wafer are damaged.
Taking the example of the Beveldry etch of the metal gate Al, after the Al passes through the Beveldry etch, metal Al corrosion and metal Cu or metal Ta precipitation occur on the surface of the core region of the active surface of wafer (because the gate al—cu contains 0.5% Cu component), which seriously affects the subsequent manufacturing process and the electrical performance of wafer.
The chemical formula of the corrosion reaction is as follows:
after the bearing test, when wafer is exposed to air, the chemical equation includes the following:
Cl 2 +H 2 O(l)→HCl(l)↑+HClO(l)
BCl 3 +H 2 O(l)→HCl(l)↑+H 3 BO 3 (l)
AlCl 3 +H 2 O(l)→HCl(l)↑+Al 3 (OH) 3 (s)
the liquid HCl (l) formed by the foregoing reaction may corrode metals directly or through electrochemical principles, and the chemical reaction formula includes the following:
HCl+Al→AlCl 3 (l)+H 2 (Al etching)
HCl+CuO/Cu 2 O→CuCl 2 (l)+H 2 O (surface CuO/Cu) 2 O dissolves
Al+CuCl 2 (l)→AlCl 3 (l) +Cu(s) (electrochemical corrosion, cu precipitation)
Al+TaCl 2 (l)→AlCl 3 (l) +Ta(s) (electrochemical corrosion, ta precipitation)
It should be noted that the above corrosion phenomenon cannot be avoided before and after performing chemical mechanical polishing (chemical mechanical polishing, CMP) on the level, and a specific process may be described in fig. 2.
CMP is understood to be a planarization technique in the fabrication of semiconductor devices, while using chemical etching and mechanical friction to planarize silicon wafers or other substrate materials during processing. Fig. 2 (a) is a film structure diagram of a work function metal and a metal gate after deposition, and fig. 2 (b) is a CMP process performed on (a) to polish away the metal film on the silicon oxide plane, leaving only the metal at the gate.
In view of the above technical problems, the present application provides a novel device for cleaning the edge of a wafer by using plasma, which can be used for solving the technical problem of corrosion, so as to improve wafer quality and increase wafer yield.
A novel apparatus for cleaning the edge of a wafer using plasma provided herein will be described with reference to fig. 3. The specific structure of the wafer cleaning device is shown in fig. 3.
It should be understood that a wafer cleaning apparatus shown in fig. 3 has the same composition as that of a wafer cleaning apparatus shown in fig. 1 in part, and only the composition structure not possessed by a wafer cleaning apparatus shown in fig. 1 will be listed below.
In the wafer cleaning apparatus shown in fig. 3, the upper insulating ring includes a sealing ring which is located at a lower end position of the upper insulating ring and can be designed to move up and down.
Specifically, the upper insulating ring is in a raised (or open) state prior to wafer entry into the chamber of the wafer cleaning apparatus, which facilitates wafer placement. After the wafer is adsorbed by the fixing member, the upper insulating ring is in a lowered (or, closed) state and is brought into light contact with the surface of the core region of the active surface of the wafer, i.e., the core region of the active surface of the wafer to be protected, thereby forming a sealing effect, and thus, it is possible to prevent etching gas or reaction products from penetrating into the core region of the active surface of the wafer and contaminating the core region of the active surface of the wafer.
It should be appreciated that after the upper insulating ring is lowered, the cleaning device can also input a protective gas to maintain the cavity in a positive pressure state so as to prevent the etching gas from penetrating into the core region of the active surface of wafer due to the partial region being not tightly sealed.
It will be appreciated that the seal ring attached to the lower end of the upper insulating ring comprises a flexible member that is adapted to provide, when the seal ring is in contact (or in slight contact) with the surface of the core region of the active face of the wafer, no damage or scratch to the surface of the core region of the active face of the wafer, or to protect the region of the active face of the seal ring in contact with the wafer.
In other words, the flexible member enables the contact between the sealing ring and the core region of the active face of the wafer to be a flexible contact, i.e. by means of which the sealing ring is able to cause no or a certain degree of scraping to the core region of the active face of the wafer within an acceptable degree.
It is to be understood that the flexible member may be understood as a softer material, such as, for example, polytetrafluoroethylene (poly tetra fluoroethylene, PTFE) or PTFE-and-other material or other similar chemically stable material resistant to plasma etching or PTFE-doped material, as the application is not specifically limited.
It will be appreciated that when the flexible member is of a material composition, the hardness of the material needs to be lower than the hardness of the wafer plating and/or the hardness of the wafer.
It should be noted that the difference in hardness between the two may be extremely large or within a certain extent, and the application is not limited to this, but it is necessary to ensure that the above-mentioned material does not cause scratches or only causes scratches within an acceptable level when it contacts the core region of the active surface of wafer.
It should also be understood that the flexible member may be understood as a device or as a solid fitting that protects the active surface core area of the wafer from scratches or marks, etc. when the sealing ring is brought into contact with the active surface core area of the wafer, or may be a fitting or device that performs the function of the softer material as described above, which is not specifically limited in this application.
It should be understood that, in the above-mentioned wafer cleaning apparatus, the widths of the upper insulating ring and the sealing ring may be designed and changed according to the area that needs to be protected actually, which is not particularly limited in this application.
It should be understood that the width of the sealing ring is variable, that is, the sealing ring may be adjusted according to actual needs, which is not specifically limited in this application.
It should be understood that the position of the sealing ring can be adjusted, and can be located 0-3mm away from the WEE, or can be other positions, which can be set according to actual needs, and the application is not limited in particular.
It should be understood that the shape of the sealing ring may be set according to actual needs, for example, may be a regular annular shape, may be an irregular annular shape, or may be other shapes, which are not specifically limited in this application.
It should be understood that the sealing ring may be a single component or may be a combination of multiple components, which is not specifically limited in this application.
It will be appreciated that as part of the upper insulator ring, the seal ring needs to protrude beyond the lower end position of the upper insulator ring, i.e. during lowering of the upper insulator ring, the seal ring needs to come into contact with the core region of the active face of the wafer, which is not required for the upper insulator ring.
It should be understood that the connection relationship between the sealing ring and the upper insulating ring can be understood as follows: the sealing ring is located at the lowest end of the upper insulating ring, or the sealing ring can be sleeved at the lower end of the upper insulating ring, that is, the lower end of the upper insulating ring is wrapped, or the sealing ring can be fixed at the inner side or the outer side of the upper insulating ring, and all the sealing ring needs to protrude out of the lower end of the upper insulating ring.
It should be appreciated that, in any of the above connection relationships, the seal ring needs to protrude beyond the lower end of the upper insulating ring, so as to achieve the purpose or function of isolating the etching gas and the corresponding gas products.
It should be understood that in the above-mentioned wafer cleaning apparatus, the upper insulating ring may be lifted up and down under the driving of the motor as required, and the control accuracy of the motor is controlled below 10 μm.
It will be appreciated that in the wafer cleaning apparatus described above, the apparatus further comprises a fluid conduit which can be used for the input of fluid, in particular to enable the delivery of fluid from outside the apparatus to inside the chamber of the apparatus. It should be understood that in this application, fluid refers to a flowable substance, which is a generic term for liquids and gases, and is not described in detail herein.
As a possible implementation, the fluid conduit may comprise a steam generating device mounted on the fluid conduit, for example a protective fluid conduit, the specific structure of which is shown in fig. 4.
Specifically, during normal plasma etching, the water vapor generating device may be selectively not turned on, and only the protective gas may enter the chamber of the wafer cleaning device. After plasma etching is finished, the water vapor generating device can be selectively turned on, so that the water vapor taking the protective gas as a carrier enters the cavity of the device through the fluid pipeline. When the water vapor generating device is turned on, the upper insulating ring is in an ascending state, the protective gas carries high-temperature water vapor (or no protective gas only high-temperature water vapor) to diffuse to wafer edge along the center of the wafer core region, and the high-temperature water vapor and Cl 2 /BCl 3 /MCl x The reaction produces gaseous HCl (if necessary, the electrode power is turned on to form plasma while water vapor is being introduced), at which time Cl on the wafer surface is stripped and then pumped out of the interior of the chamber of the device. The specific process can be seen in the schematic diagram of fig. 5 after the water vapor generating device is turned on.
It should be appreciated that the steam generator may be connected in series with the fluid conduit and configured to separately feed air and water in the form of gas + water or in parallel, as this application is not specifically limited.
As another possible implementation, the device assembly may further comprise a temperature control module, which can be used to achieve temperature control or temperature regulation of the stationary assembly, the temperature of which may be set according to actual needs, for example, adjustable between room temperature and 300 ℃.
Through the temperature control module, the device can generate gaseous HCl by utilizing the chemical reaction of water vapor and Cl-containing substances at high temperature, and then the device is vacuumized (pump), so that the residual Cl components (such as Cl 2 /BCl 3 /MCl x ) The chemical reaction formula is shown as follows:
Cl 2 +H 2 O(g)→HCl(g)↑+HClO(g)↑
BCl 3 +H 2 O(g)→HCl(g)↑+H 3 BO 3 (g)↑
MCl 3 +H 2 O(g)→HCl(g)↑+M 3 (OH) 3 (s)↑
it should be appreciated that the temperature control module may be an integral part of the fixture assembly or may be a separate fitting or module independent of the fixture assembly, as this application is not specifically limited in this regard.
By the device, corrosion or electrochemical reaction of the metal grid electrode or other metal materials or other coatings (layers) caused by the back dry etching can be avoided. Thereby reducing the defect and improving the yield of wafer.
It should be appreciated that the present application can add a water vapor generating device to the gas-protecting line, which can be connected in series with the gas line in N 2 +H 2 O form or separate charge H in parallel 2 O, and the temperature of the water vapor can be maintained at 100 ℃ or higher.
It should be appreciated that in the wafer cleaning apparatus, the steam generator control valve may be closed or opened as desired.
It should be understood that according to practical needs, the plasma can be formed by opening the electric power while introducing steam, so as to improve the reaction efficiency.
Through the device, chlorine-containing substances can be effectively prevented from remaining in the core area and the edge area of the active surface of the wafer, so that corrosion or electrochemical reaction of a metal grid electrode or other metal materials or other plating layers after the bearing etching is avoided. Thereby reducing the defects of the wafer and improving the yield of the wafer.
It should be appreciated that a range of applications for an apparatus for cleaning the edge of a wafer using plasma provided herein include, but are not limited to, the Bevel etch of a metal Al gate, with other metal or plating using Bevel etch and Cl induced corrosion cases equally applicable to the present application.
It should be understood that the application range of an apparatus for cleaning the edge of a wafer using plasma provided in the present application includes, but is not limited to, a Bevel etch of metal, and the application of the Bevel etch to other non-metal films (films) is equally applicable to the case where the underlying metal is exposed.
It is to be understood that the etchant or reactant gases useful herein include those employing all chlorine-containing organic or inorganic components, including but not limited to Cl 2 Or Cl 2 +BCl 3 Or Cl 2 +CF 4 Or Cl 2 +NF 3 Or Cl 2 +SF 6 。
It should be noted that the temperature control module, the sealing ring, and the water vapor generating device may be separately used as components of the wafer cleaning device shown in fig. 1, or may be combined with each other to form a component of the cleaning device shown in fig. 1, for example, a combination of the temperature control module and the sealing ring device, a combination of the temperature control module and the water vapor generating device, a combination of the sealing ring and the water vapor generating device, and a combination of the three, which are not specifically limited in this application.
It should be appreciated that the present application also provides a method of cleaning an edge of a wafer using a plasma, the method comprising:
step one: the upper insulating assembly is opened and placed in the wafer, the upper insulating assembly is located in one side area of the active surface of the wafer, the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is located on the outer side of the insulating cover plate and connected with the insulating cover plate, the distance between the upper insulating ring and the active surface of the wafer is controllable, the upper insulating ring comprises a sealing ring, the sealing ring comprises a flexible component, and the flexible component enables the sealing ring to be in flexible contact with the active surface of the wafer.
Step two: the passive side of the wafer is carried and held.
Step three: and closing the insulating cover plate, descending the upper insulating ring, and flexibly contacting the sealing ring with the active surface of the wafer.
Specifically, the insulating cover plate is firstly opened, when the wafer is put into the cavity of the device, the wafer is fixed by using the fixing assembly, then the insulating cover plate is closed, the upper insulating ring is lowered, the upper insulating ring is flexibly contacted with the core area of the active surface of the wafer, more specifically, the sealing ring of the upper insulating ring is flexibly contacted with the core area of the active surface of the wafer, and then the sealing or isolating effect is realized.
As a possible implementation manner, the present application may also support the introduction of a protective gas or fluid, so that the cavity of the device is maintained in a positive pressure state, thereby ensuring the sealing effect.
By the method, the upper insulating ring can be lowered in the process of cleaning the edge of the wafer, so that the upper insulating ring is in flexible contact with the core area of the active surface of the wafer, sealing is achieved, etching gas and other reaction products are isolated from penetrating into the surface of the core area of the active surface of the wafer, and pollution is avoided.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims (14)

  1. An apparatus for cleaning an edge of a wafer using a plasma, comprising:
    the fixing assembly is used for bearing and fixing the passive surface of the wafer;
    an upper insulating component which is positioned in the area of one side of the active surface of the wafer and is used for protecting the core area of the active surface of the wafer,
    the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is positioned at the outer side of the insulating cover plate and is connected with the insulating cover plate,
    wherein the distance between the upper insulating ring and the active surface of the wafer is controllable,
    the upper insulating ring comprises a sealing ring, and the sealing ring comprises a flexible component, wherein the flexible component is used for enabling the sealing ring to flexibly contact with the active surface of the wafer.
  2. The device of claim 1, wherein the flexible member comprises:
    polytetrafluoroethylene, PTFE, material or a material doped with said PTFE.
  3. The apparatus according to claim 1 or 2, characterized in that the apparatus further comprises:
    and the temperature control module is used for adjusting the temperature of the fixed component.
  4. A device according to any one of claims 1 to 3, further comprising:
    a fluid conduit for delivering fluid from outside the device to inside the cavity of the device,
    wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
  5. The apparatus according to any one of claims 1 to 4, further comprising:
    and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of the plasma from the edge of the wafer to the core area of the wafer.
  6. The apparatus according to any one of claims 1 to 5, further comprising:
    the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating the plasma through electrifying.
  7. An apparatus for cleaning an edge of a wafer using a plasma, comprising:
    the fixing assembly is used for bearing and fixing the passive surface of the wafer;
    an upper insulating component which is positioned in the area of one side of the active surface of the wafer and is used for protecting the core area of the active surface of the wafer,
    the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is positioned at the outer side of the insulating cover plate and is connected with the insulating cover plate,
    the distance between the upper insulating ring and the active surface of the wafer is controllable;
    and the temperature control module is used for adjusting the temperature of the fixed component.
  8. The apparatus of claim 7, wherein the apparatus further comprises:
    a fluid conduit for delivering fluid from outside the device to inside the cavity of the device,
    wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
  9. The apparatus according to claim 7 or 8, characterized in that the apparatus further comprises:
    and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of the plasma from the edge of the wafer to the core area of the wafer.
  10. The apparatus according to any one of claims 7 to 9, further comprising:
    the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating the plasma through electrifying.
  11. An apparatus for cleaning an edge of a wafer using a plasma, comprising:
    the fixing assembly is used for bearing and fixing the passive surface of the wafer;
    an upper insulating component which is positioned in the area of one side of the active surface of the wafer and is used for protecting the core area of the active surface of the wafer,
    the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is arranged on the outer side of the insulating cover plate and is connected with the insulating cover plate,
    wherein the distance between the upper insulating ring and the active surface of the wafer is controllable,
    a fluid conduit for delivering fluid from outside the device to inside the cavity of the device,
    wherein the fluid conduit comprises a water vapor generating device for generating water vapor that flows through the fluid conduit.
  12. The apparatus of claim 11, wherein the apparatus further comprises:
    and the lower insulating ring is positioned in the area on one side of the passive surface of the wafer and is used for controlling the distance of the plasma entering the core area of the wafer from the edge of the wafer.
  13. The apparatus according to claim 11 or 12, characterized in that the apparatus further comprises:
    the electrode assembly comprises an upper electrode and a lower electrode, wherein the upper electrode is positioned in an active surface side area of the wafer, the lower electrode is positioned in a passive surface side area of the wafer, and the electrode assembly is used for generating the plasma through electrifying.
  14. A method of cleaning an edge of a wafer using a plasma, comprising:
    opening an upper insulating component, placing the upper insulating component into a wafer, wherein the upper insulating component is positioned in an area on one side of an active surface of the wafer,
    the upper insulating assembly comprises an upper insulating ring and an insulating cover plate, the upper insulating ring is positioned at the outer side of the insulating cover plate and connected with the insulating cover plate, the distance between the upper insulating ring and the active surface of the wafer is controllable,
    the upper insulating ring comprises a sealing ring, and the sealing ring comprises a flexible component which enables the sealing ring to flexibly contact with the active surface of the wafer;
    a passive face carrying and fixing the wafer;
    and closing the insulating cover plate, descending the upper insulating ring, and flexibly contacting the sealing ring with the active surface of the wafer.
CN202180029169.8A 2021-12-01 2021-12-01 Device for cleaning edge of wafer by using plasma Pending CN116547792A (en)

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US20030183245A1 (en) * 2002-04-01 2003-10-02 Min-Shyan Sheu Surface silanization
US8455352B1 (en) * 2012-05-24 2013-06-04 Applied Materials, Inc. Method for removing native oxide and associated residue from a substrate
CN109326508B (en) * 2018-09-26 2021-01-08 华进半导体封装先导技术研发中心有限公司 Method for wet processing wafer edge
CN109887871B (en) * 2019-03-26 2021-02-02 上海华力集成电路制造有限公司 Wafer edge washing device and use method thereof and protective cover
CN113436995A (en) * 2021-06-21 2021-09-24 江苏中科智芯集成科技有限公司 Semiconductor device and method for accurately etching and cleaning wafer edge by wet method

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