CN116545381B - Voltage-controlled oscillator for compensating frequency drift caused by temperature change and calibration method - Google Patents

Voltage-controlled oscillator for compensating frequency drift caused by temperature change and calibration method Download PDF

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Publication number
CN116545381B
CN116545381B CN202310592159.6A CN202310592159A CN116545381B CN 116545381 B CN116545381 B CN 116545381B CN 202310592159 A CN202310592159 A CN 202310592159A CN 116545381 B CN116545381 B CN 116545381B
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capacitor
inductor
voltage
mos tube
varactor
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CN116545381A (en
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吴亮
于陈
吴小平
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Chinese University of Hong Kong Shenzhen
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Chinese University of Hong Kong Shenzhen
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/02—Details
    • H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/1262—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising switched elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

Abstract

The invention discloses a voltage-controlled oscillator for compensating frequency drift caused by temperature change and a calibration method thereof, comprising a B-type voltage-controlled oscillator unit, a frequency compensation unit, a switched capacitor array and a calibration unit; the class B voltage-controlled oscillation unit comprises a voltage source, a first inductor, a first MOS tube, a second inductor, first capacitors, fifth capacitors and first varactor capacitors, fourth varactor capacitors; the frequency compensation unit comprises a PTAT current generator and a CTAT current generator; the switch capacitor array comprises a third MOS tube, a fifth MOS tube, a first array port, a second array port and sixth capacitors, and eleventh capacitors; the calibration circuit comprises a first port, a second port, a twelfth capacitor, a thirteenth capacitor, a fifth varactor, a sixth varactor, third to seventh inductors, and sixth to ninth MOS transistors. The invention has simple structure and quick response without a phase-locked loop, and can compensate frequency drift caused by temperature change.

Description

Voltage-controlled oscillator for compensating frequency drift caused by temperature change and calibration method
Technical Field
The present invention relates to voltage controlled oscillators, and more particularly, to a voltage controlled oscillator and a calibration method for compensating frequency drift caused by temperature variation.
Background
Since a Voltage Controlled Oscillator (VCO) may operate at different temperatures, its output frequency may also vary with temperature, which has a large impact on the accuracy of the frequency. The Frequency Drift Temperature Compensation (FDTC) technology can inhibit the change of temperature change on the output frequency of the voltage-controlled oscillator, and improve the output precision. Existing frequency drift temperature compensation techniques typically require the use of a phase locked loop, which has a complex structure and long response time. At the same time, most techniques require complex calibration operations and frequency drift due to temperature can adversely affect the overall voltage controlled oscillator.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a voltage-controlled oscillator and a calibration method for compensating frequency drift caused by temperature change, which do not need a phase-locked loop, have simple structure and quick response, and can compensate the frequency drift caused by the temperature change.
The aim of the invention is realized by the following technical scheme: a voltage-controlled oscillator for compensating frequency drift caused by temperature variation comprises a B-type voltage-controlled oscillator unit, a frequency compensation unit, a switched capacitor array and a calibration unit;
the class B voltage-controlled oscillation unit comprises a voltage source, a first inductor, a first MOS tube, a second inductor, a first capacitor, a second capacitor, a fifth capacitor, a first varactor capacitor, a fourth varactor capacitor, a first end of the first inductor, a second end of the second inductor, a third inductor and a fourth varactor capacitor, wherein the first end of the first inductor is connected with a drain electrode of the first MOS tube, a source electrode of the first MOS tube is connected with a source electrode of the second MOS tube, and the first end of the second inductor is connected between the source electrode of the first MOS tube and the source electrode of the second MOS tube; the second end of the first inductor is connected with the drain electrode of the second MOS tube; the grid electrode of the first MOS tube is also connected with the drain electrode of the second MOS tube, and the grid electrode of the second MOS tube is also connected with the drain electrode of the first MOS tube; the first capacitor is connected in parallel with two ends of the first inductor, and the voltage source is also connected with the first inductor;
the first end of the second capacitor is connected with the first end of the fourth capacitor, the connected common end is connected with the first end of the first inductor, and the second end of the second capacitor is connected with the first end of the third capacitor through the first varactor capacitor and the second varactor capacitor in sequence; the second end of the fourth capacitor is connected with the first end of the fifth capacitor through the third varactor capacitor and the fourth varactor capacitor in sequence; the second end of the third capacitor is connected with the second end of the fifth capacitor, and the connected common end is connected with the second end of the first inductor; the common end of the first capacitance-changing tube capacitor and the second capacitance-changing tube capacitor is connected with the common end of the third capacitance-changing tube capacitor and the fourth capacitance-changing tube capacitor to the same common point, and the common point is connected with a voltage interface V t ；
The switch capacitor array and the calibration unit are connected in parallel with two ends of the first inductor;
the frequency compensation unit comprises a PTAT current generator and a CTAT current generator, one end of the PTAT current generator is connected with the second end of the second capacitor, and the other end of the PTAT current generator is connected with the first end of the third capacitor; one end of the CTAT current generator is connected with the second end of the fourth capacitor, and the other end of the CTAT current generator is connected with the first end of the fifth capacitor.
Preferably, the first inductor is provided with a middle tap, and the coil lengths from the middle tap to the two ends of the first inductor are equal; the voltage source is connected with a middle tap of the first inductor. This structure acts as a series connection of two inductors and a power supply is connected in between.
Preferably, the voltage interface V t For frequency-regulating ports, by varying voltage interface V t Is set to the input voltage of (a); coarse tuning by a switched capacitor array, V t Fine tuning is achieved so that the oscillation frequency of the VCO can be adjusted.
Preferably, the switch capacitor array comprises a third MOS tube, a fifth MOS tube, a first array port, a second array port and a sixth capacitor, a seventh capacitor and an eleventh capacitor;
the first array port is connected with the first end of the first inductor, and the second array port is connected with the second end of the first inductor;
the drain electrode of the third MOS tube is connected to the first array port through a sixth capacitor, the source electrode of the third MOS tube is connected to the second array port through a seventh capacitor, and the grid electrode of the third MOS tube is also connected with a voltage port A0;
the drain electrode of the fourth MOS tube is connected to the first array port through the eighth capacitor, the source electrode of the fourth MOS tube is connected to the second array port through the ninth capacitor, and the grid electrode of the fourth MOS tube is also connected with a voltage port A1;
the drain electrode of the fifth MOS tube is connected to the first array port through the tenth capacitor, the source electrode of the fifth MOS tube is connected to the second array port through the eleventh capacitor, and the grid electrode of the fifth MOS tube is also connected with a voltage port A2.
Preferably, the calibration unit includes a first port, a second port, a twelfth capacitor, a thirteenth capacitor, a fifth varactor, a sixth varactor, third to seventh inductors, and sixth to ninth MOS transistors;
the first port is connected with a first end of the first inductor, and the second port is connected with a second end of the first inductor;
the first end of the twelfth capacitor is connected with the first port, the second end of the twelfth capacitor is connected with the first end of the thirteenth capacitor through a fifth varactor and a sixth varactor in sequence, and the second end of the thirteenth capacitor is connected with the second port; one end of the third inductor is connected with the second end of the twelfth capacitor, the other end of the third inductor is connected with the first end of the thirteenth capacitor through the fourth inductor, and the public end of the third inductor and the public end of the fourth inductor are also connected with a VBT interface;
the first end of the fifth inductor is connected between the fifth varactor and the sixth varactor, the second end of the fifth inductor is connected to the drain electrode of the sixth MOS transistor, the source electrode of the sixth MOS transistor is grounded, and the grid electrode of the sixth MOS transistor is connected with a switch signal control port S0;
the first end of the sixth inductor is connected with the first end of the fifth inductor, the second end of the sixth inductor is connected to the drain electrode of the seventh MOS tube, the source electrode of the seventh MOS tube is grounded, and the grid electrode of the seventh MOS tube is connected with a switch signal control port S1;
the first end of the seventh inductor is connected with the first end of the fifth inductor, the second end of the seventh inductor is connected to the drain electrode of the eighth MOS tube, the source electrode of the eighth MOS tube is grounded, and the grid electrode of the eighth MOS tube is connected with a switch signal control port S2;
the drain electrode of the ninth MOS tube is connected with the working voltage, the source electrode of the ninth MOS tube is connected with the first end of the fifth inductor, and the grid electrode of the ninth MOS tube is connected with the CTAT current generator;
the VBT interface is used for providing proper bias voltage for one end of the varactor so that the capacitance of the varactor has a better linear relation with the voltage change.
A method of calibrating a voltage controlled oscillator that compensates for frequency drift caused by temperature variations, comprising:
s1, coarse adjustment is carried out by utilizing a switch capacitor array, and the working frequency band of a voltage-controlled oscillator is covered with a required working frequency point:
the switched capacitor array contains three bits, controlled by the turning on and off of three transistors:
when the A0, A1 or A2 inputs high level, the corresponding transistor is started, the branch is conducted, and as the transistor is connected with the two capacitors in series, when the branch is conducted, the two capacitors are connected in parallel to the voltage-controlled oscillator, so that the total capacitance of the voltage-controlled oscillator is increased, and the oscillation frequency is reduced;
in the switch capacitor array, the capacitance connected in series with A0 is C, the capacitance connected in series with A1 is 2C, and the capacitance connected in series with A2 is 3C, so that the capacitance in 0 to 7C and 8 states is obtained by turning on and off the transistor, the capacitance in each state corresponds to different frequencies, and therefore the frequency adjustment in 8 states is realized through the switch capacitor array;
s2, changing the Vt voltage and the pressure difference between two ends, wherein the change of the pressure difference can change the capacitance of the varactor, so that the working frequency of the voltage-controlled oscillator is finely adjusted to a required working frequency point;
s3, changing the duty ratio and the slope of PTAT and CTAT, so that the capacitance is basically unchanged along with the temperature, and the working frequency is basically unchanged:
the CTAT source voltage decreases with increasing temperature, and the capacitance associated therewith decreases with increasing temperature; the PTAT source increases with increasing voltage, and the capacitance associated therewith increases with increasing temperature, changing PTAT and CTAT duty cycles and slopes, so that the (overall) capacitance is substantially unchanged with temperature (exactly the same or within an allowable range of error), and the fundamental frequency of operation is unchanged (exactly inconvenient or within an allowable range of error).
The beneficial effects of the invention are as follows: the frequency drift temperature compensation technology provided by the invention does not need a phase-locked loop, has a simple structure and quick response, and meanwhile, the frequency drift compensation coverage range is full-band.
Drawings
FIG. 1 is a schematic diagram of the present invention;
FIG. 2 is a schematic diagram of a class B VCO and varactor increment thereof according to the present invention;
FIG. 3 is a graph showing the change of CGD with the gate-source voltage at different temperatures when the drain-source voltage is 1.5V;
FIG. 4 is a graph showing the change of CGS with the gate-source voltage at different temperatures when the drain-source voltage is 1.5V;
FIG. 5 is a schematic diagram showing the variation of capacitance of a varactor with temperature;
FIG. 6 is a schematic diagram of the generation and waveform of the PTAT voltage and CTAT voltage applied;
FIG. 7 is a schematic diagram of a switched capacitor array;
fig. 8 is a schematic diagram of a calibration unit.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
As shown in fig. 1, a voltage controlled oscillator that compensates for temperature variations resulting in frequency drift compensates for voltage controlled oscillator frequency drift due to temperature variations by a frequency drift temperature compensation technique. The core circuit of the design is divided into four parts, namely a B-type voltage-controlled oscillator, a frequency compensation varactor (frequency compensated varactor), a switched capacitor array (switch capacitor array) and calibration (trimming).
Fig. 2 is a schematic diagram of a class B voltage controlled oscillator and a varactor increment thereof, where fig. 2 (a) is a class B voltage controlled oscillator, and the normal temperature operating frequency thereof is:
wherein C is R The capacitor comprises a fixed capacitor, a varactor capacitor, a transistor parasitic capacitor and the like, and is the total equivalent capacitance in the circuit. When the ambient temperature of the voltage controlled oscillator changes, the working state of the voltage controlled oscillator also changes. The change of the working state is mainly reflected on the change of the output frequency, which is mainly caused by the change of the parasitic capacitance of the transistor and the change of the capacitance of the varactor, as shown in fig. 2 (b), C VT Is the capacitance increment of the varactor which changes along with the temperature, C TT Is the increase in parasitic capacitance of the transistor with temperature. Therefore, when the temperature changes Δt, the operating frequency becomes:
while for a voltage controlled oscillator it is desirable that its operating point remains stable in various states. It is therefore desirable to eliminate the capacitance increase of equation (2) in various ways.
First we apply to C TT And eliminating. For parasitic capacitance of transistor, consider mainly C GD And C GS Other parasitic capacitances are smaller and have less effect on frequency. As the temperature changes, the parasitic capacitance may exhibit a change as shown in fig. 3 and 4. Simulation results were obtained by Cadence Virtuoso. FIG. 3 shows C at different temperatures at a drain-source voltage of 1.5V GD As a function of the gate-source voltage. FIG. 4 shows C at different temperatures at a drain-source voltage of 1.5V GS As a function of the gate-source voltage.
It can be noted that when V GS When the transistor is larger, the transistor enters a saturation region, and the parasitic capacitance is less influenced by temperature. Therefore, the transistor is ensured to work in a saturation region, and the influence of temperature on the parasitic capacitance of the transistor can be reduced.
Next we eliminate C VT I.e. the capacitance increase of the varactor. As shown in fig. 5, the capacitance of the varactor can vary with temperature, and such dramatic changes can have a large impact on the operating frequency. The present invention thus proposes a frequency compensating varactor (frequency compensated varactor) section as shown in fig. 1. Because the capacitance of the varactor can change along with the change of the voltage at two ends, if different voltages are given to the varactor at different temperatures, the change of the capacitance of the varactor along with the temperature can be compensated. Firstly, it is considered that the capacitance of the varactor is in linear relation with the differential pressure and the temperature at two ends, namely:
C var ＝k 1 (V 1 -V 2 )+C 1 (3)
C var ＝k 2 (T 1 -T 2 )+C 2 (4)
under normal temperature, if the voltage difference between two ends of the varactor is 0, the capacitance is assumed to be C T0 When the temperature changes delta T, the capacitance is as follows:
C var ＝k 2 ΔT+C T0 (5)
the first of these is the capacitance due to temperature changes. Meanwhile, if the voltage at two ends of the varactor is changed by Δv, the capacitance is as follows:
C var ＝k 1 ΔV+k 2 ΔT+C T0 (6)
in order to keep the capacitance of the varactor unchanged with temperature, we let the voltage increment term and the temperature increment term offset. We therefore consider a voltage Proportional To Absolute Temperature (PTAT) and a voltage inversely proportional to absolute temperature (CTAT). If the two voltages are applied to one end of the varactor by a certain ratio, the capacitance of the varactor can be kept unchanged with temperature. Such as the frequency compensating varactor (frequency compensated varactor) structure of fig. 1, the PTAT voltage and CTAT voltage applied are generated by the circuit of fig. 6. By changing the capacitance size ratio of the PTAT varactor module and the CTAT varactor module, compensation of different slopes can be realized. By this way of blurring compensation, a minimum frequency drift of 0.034% is finally achieved.
As shown in fig. 7, the switched capacitor array (switch capacitor array) is used, and voltages of 0v and 1.3v are applied to A0, A1 and A2 to switch on and off, so that coarse tuning of the frequency of 3 bits is realized, and a wider frequency adjustment range is achieved.
As shown in fig. 8, a calibration unit (calibrating) according to the present invention is provided. There may be a difference between the post-simulation and the actual chip due to process deviation, model accuracy, etc. The calibration unit in the figure may be connected via a switch S 0 ，S 1 ，S 2 To obtain different VTRM voltage versus temperature curves. And under different VTRM voltage along with temperature curves, the variable capacitance increment of the variable capacitance tube along with temperature can also be changed, so that the frequency compensation variable capacitance tube module can be adjusted, and the calibration function is realized.
The Cadence post-imitation function which can be finally realized by the invention is as follows: the tuning range is 8.32GHz-9.49GHz (13.14%), the frequency drift of the full frequency band is 0.034% -0.306% (-40 ℃ -120 ℃), and the FoM of 1Mz is 181.3dBc/Hz to 185dBc/Hz.
Although exemplary embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions, and the like, can be made in the form and detail without departing from the scope and spirit of the invention as disclosed in the accompanying claims, all such modifications are intended to be within the scope of the invention as disclosed in the accompanying claims, and the various steps of the claimed method can be combined together in any combination. Therefore, the description of the embodiments disclosed in the present invention is not intended to limit the scope of the present invention, but is used to describe the present invention. Accordingly, the scope of the invention is not limited by the above embodiments, but is defined by the claims or equivalents thereof.

Claims (4)

1. A voltage controlled oscillator that compensates for frequency drift caused by temperature changes, characterized by: the device comprises a class B voltage-controlled oscillator unit, a frequency compensation unit, a switched capacitor array and a calibration unit;
the class B voltage-controlled oscillation unit comprises a voltage source, a first inductor, a first MOS tube, a second inductor, a first capacitor, a second capacitor, a fifth capacitor, a first varactor capacitor, a fourth varactor capacitor, a first end of the first inductor, a second end of the second inductor, a third inductor and a fourth varactor capacitor, wherein the first end of the first inductor is connected with a drain electrode of the first MOS tube, a source electrode of the first MOS tube is connected with a source electrode of the second MOS tube, and the first end of the second inductor is connected between the source electrode of the first MOS tube and the source electrode of the second MOS tube; the second end of the first inductor is connected with the drain electrode of the second MOS tube; the grid electrode of the first MOS tube is also connected with the drain electrode of the second MOS tube, and the grid electrode of the second MOS tube is also connected with the drain electrode of the first MOS tube; the first capacitor is connected in parallel with two ends of the first inductor, and the voltage source is also connected with the first inductor;
the first end of the second capacitor is connected with the first end of the fourth capacitor, the connected common end is connected with the first end of the first inductor, and the second end of the second capacitor is connected with the first end of the third capacitor through the first varactor capacitor and the second varactor capacitor in sequence; the second end of the fourth capacitor is connected with the first end of the fifth capacitor through the third varactor capacitor and the fourth varactor capacitor in sequence;
the second end of the third capacitor is connected with the second end of the fifth capacitor, and the connected common end is connected with the second end of the first inductor; the common end of the first capacitance-changing tube capacitor and the second capacitance-changing tube capacitor is connected with the common end of the third capacitance-changing tube capacitor and the fourth capacitance-changing tube capacitor to the same common point, and the common point is connected with a voltage interface V t ；
The switch capacitor array and the calibration unit are connected in parallel with two ends of the first inductor;
the switch capacitor array comprises a third MOS tube, a fifth MOS tube, a first array port, a second array port and sixth capacitor, eleventh capacitor;
the first array port is connected with the first end of the first inductor, and the second array port is connected with the second end of the first inductor;
the drain electrode of the third MOS tube is connected to the first array port through a sixth capacitor, the source electrode of the third MOS tube is connected to the second array port through a seventh capacitor, and the grid electrode of the third MOS tube is also connected with a voltage port A0;
the drain electrode of the fourth MOS tube is connected to the first array port through the eighth capacitor, the source electrode of the fourth MOS tube is connected to the second array port through the ninth capacitor, and the grid electrode of the fourth MOS tube is also connected with a voltage port A1;
the drain electrode of the fifth MOS tube is connected to the first array port through a tenth capacitor, the source electrode of the fifth MOS tube is connected to the second array port through an eleventh capacitor, and the grid electrode of the fifth MOS tube is also connected with a voltage port A2;
the calibration unit comprises a first port, a second port, a twelfth capacitor, a thirteenth capacitor, a fifth varactor, a sixth varactor, third to seventh inductors, and sixth to ninth MOS transistors;
the first port is connected with a first end of the first inductor, and the second port is connected with a second end of the first inductor;
the first end of the twelfth capacitor is connected with the first port, the second end of the twelfth capacitor is connected with the first end of the thirteenth capacitor through a fifth varactor and a sixth varactor in sequence, and the second end of the thirteenth capacitor is connected with the second port; one end of the third inductor is connected with the second end of the twelfth capacitor, the other end of the third inductor is connected with the first end of the thirteenth capacitor through the fourth inductor, and the public end of the third inductor and the public end of the fourth inductor are also connected with a VBT interface;
the first end of the fifth inductor is connected between the fifth varactor and the sixth varactor, the second end of the fifth inductor is connected to the drain electrode of the sixth MOS transistor, the source electrode of the sixth MOS transistor is grounded, and the grid electrode of the sixth MOS transistor is connected with a switch signal control port S0;
the first end of the sixth inductor is connected with the first end of the fifth inductor, the second end of the sixth inductor is connected to the drain electrode of the seventh MOS tube, the source electrode of the seventh MOS tube is grounded, and the grid electrode of the seventh MOS tube is connected with a switch signal control port S1;
the first end of the seventh inductor is connected with the first end of the fifth inductor, the second end of the seventh inductor is connected to the drain electrode of the eighth MOS tube, the source electrode of the eighth MOS tube is grounded, and the grid electrode of the eighth MOS tube is connected with a switch signal control port S2;
the drain electrode of the ninth MOS tube is connected with the working voltage, the source electrode of the ninth MOS tube is connected with the first end of the fifth inductor, and the grid electrode of the ninth MOS tube is connected with the CTAT current generator;
the VBT interface is used for providing bias voltage for one end of the varactor so that the capacitance of the varactor is in a linear relation with the voltage change;
the frequency compensation unit comprises a PTAT current generator and a CTAT current generator, one end of the PTAT current generator is connected with the second end of the second capacitor, and the other end of the PTAT current generator is connected with the first end of the third capacitor; one end of the CTAT current generator is connected with the second end of the fourth capacitor, and the other end of the CTAT current generator is connected with the first end of the fifth capacitor.
2. A voltage controlled oscillator for compensating for temperature variations resulting in frequency drift as claimed in claim 1, wherein: the first inductor is provided with a middle tap, and the lengths of coils from the middle tap to the two ends of the first inductor are equal; the voltage source is connected with a middle tap of the first inductor.
3. A voltage controlled oscillator for compensating for temperature variations resulting in frequency drift as claimed in claim 1, wherein: the voltage interface V t For frequency-regulating ports, by varying voltage interface V t Is used to realize fine tuning of frequency.
4. A method of calibrating a voltage controlled oscillator to compensate for frequency drift caused by temperature variations, based on a voltage controlled oscillator as claimed in any one of claims 1 to 3, characterized in that: comprising the following steps:
s1, coarse adjustment is carried out by utilizing a switch capacitor array, and the working frequency band of a voltage-controlled oscillator is covered with a required working frequency point:
the switched capacitor array contains three bits, controlled by the turning on and off of three transistors:
when the A0, A1 or A2 inputs high level, the corresponding transistor is started, the branch is conducted, and as the transistor is connected with the two capacitors in series, when the branch is conducted, the two capacitors are connected in parallel to the voltage-controlled oscillator, so that the total capacitance of the voltage-controlled oscillator is increased, and the oscillation frequency is reduced;
in the switch capacitor array, the capacitance connected in series with A0 is C, the capacitance connected in series with A1 is 2C, and the capacitance connected in series with A2 is 3C, so that the capacitance in 0 to 7C and 8 states is obtained by turning on and off the transistor, the capacitance in each state corresponds to different frequencies, and therefore the frequency adjustment in 8 states is realized through the switch capacitor array;
s2, changing the Vt voltage and the pressure difference between two ends, wherein the change of the pressure difference can change the capacitance of the varactor, so that the working frequency of the voltage-controlled oscillator is finely adjusted to a required working frequency point;
s3, changing the duty ratio and the slope of PTAT and CTAT, so that the capacitance is unchanged along with the temperature, and the working frequency is unchanged:
the CTAT source voltage decreases with increasing temperature, and the capacitance of the associated varactor decreases with increasing temperature; the PTAT source increases with the voltage, the capacitance of the related variable capacitance tube increases with the temperature, and the PTAT and CTAT duty ratio and slope are changed, so that the capacitance is unchanged with the temperature and the working frequency is unchanged.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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CN103404032A (en) * 2011-03-03 2013-11-20 高通股份有限公司 Temperature compensation and coarse tune bank switches in a low phase noise VCO

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