CN116544812A - High-quality EMC's low pressure SVG/APF module's modular structure - Google Patents
High-quality EMC's low pressure SVG/APF module's modular structure Download PDFInfo
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- CN116544812A CN116544812A CN202310498935.6A CN202310498935A CN116544812A CN 116544812 A CN116544812 A CN 116544812A CN 202310498935 A CN202310498935 A CN 202310498935A CN 116544812 A CN116544812 A CN 116544812A
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- 238000005259 measurement Methods 0.000 claims abstract description 38
- 238000009434 installation Methods 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims description 56
- 239000002131 composite material Substances 0.000 claims description 49
- 238000004146 energy storage Methods 0.000 claims description 34
- 238000004891 communication Methods 0.000 claims description 13
- 230000008520 organization Effects 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 9
- 239000000758 substrate Substances 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K9/00—Screening of apparatus or components against electric or magnetic fields
- H05K9/0007—Casings
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B1/00—Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
- H02B1/20—Bus-bar or other wiring layouts, e.g. in cubicles, in switchyards
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B1/00—Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
- H02B1/26—Casings; Parts thereof or accessories therefor
- H02B1/46—Boxes; Parts thereof or accessories therefor
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B1/00—Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
- H02B1/26—Casings; Parts thereof or accessories therefor
- H02B1/46—Boxes; Parts thereof or accessories therefor
- H02B1/48—Mounting of devices therein
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B1/00—Frameworks, boards, panels, desks, casings; Details of substations or switching arrangements
- H02B1/56—Cooling; Ventilation
- H02B1/565—Cooling; Ventilation for cabinets
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/01—Arrangements for reducing harmonics or ripples
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/18—Arrangements for adjusting, eliminating or compensating reactive power in networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
- H05K7/2039—Modifications to facilitate cooling, ventilating, or heating characterised by the heat transfer by conduction from the heat generating element to a dissipating body
- H05K7/20409—Outer radiating structures on heat dissipating housings, e.g. fins integrated with the housing
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/10—Flexible AC transmission systems [FACTS]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Inverter Devices (AREA)
Abstract
The invention discloses a modular mechanism of a high-quality EMC low-voltage SVG/APF module, wherein a middle shielding plate, a shielding box and a shielding wiring groove are arranged in a chassis assembly, the middle shielding plate divides the inner cavity of the chassis into an upper installation space and a lower installation space, a primary weak interference capacitance assembly is arranged in the upper installation space, a primary strong interference reactance assembly is arranged in the lower installation space, a primary weak interference IGBT assembly is arranged on the front side of the middle shielding plate, a secondary easily-interfered intelligent assembly and a secondary conversion weak interference direct current power supply are arranged in the shielding box, and a secondary measurement primary interface assembly is arranged in the shielding wiring groove. The invention reasonably divides the components in the low-voltage SVG/APF module into components such as primary strong interference, primary weak interference, secondary easy interference, secondary interface and the like according to the electromagnetic characteristics, scientifically shields the chassis of the module, reasonably distributes the components in the chassis, reasonably connects and shields the components with each other, and ensures that the module has small volume, good EMC and high reliability.
Description
Technical Field
The invention relates to a modular structure, in particular to a modular structure of a low-voltage SVG/APF module with high-quality EMC, and belongs to the technical field of SVG/APF.
Background
The low-voltage SVG is used for reactive power control of a low-voltage distribution power grid, so that the electric energy loss of the power grid is reduced, the operation safety and efficiency of the power grid are improved, and the voltage quality of the power grid is improved. The low-voltage APF is used for harmonic treatment of a low-voltage power distribution and consumption power grid, so that harmonic pollution of the power grid is eliminated, and the power quality of the power grid is improved. The low-voltage SVG and APF have the same circuit configuration using an IGBT (insulated gate bipolar semiconductor, insulate Gate Bipolar Transistor) as a core device, and different programs are written.
The low-voltage SVG and APF device is very complex power, electronic and microelectronic equipment, and has tens of types and hundreds of thousands of components, including a primary circuit with large volume, large mass, high heat generation, high voltage and large current and a secondary intelligent circuit with small volume (micro volume), small mass (micro mass), low heat generation (no heat generation), low voltage (micro voltage) and small current (micro current). The low-voltage SVG and APF devices generally adopt a modularized structure at present, namely, firstly, the low-voltage SVG and APF devices are assembled in 1 box-type machine shell according to a certain capacity specification to form a module, then, a certain number of low-voltage SVG and APF modules with a certain capacity specification are selected according to the capacity of the low-voltage SVG and APF devices, and the low-voltage SVG and APF modules are assembled in 1 or a plurality of machine cabinets to form 1 low-voltage SVG and APF device.
The low-voltage SVG and APF modules are ideal in reliability, and the reliability of the low-voltage SVG and APF devices is determined by the reliability, which is small in size and can enable more low-voltage SVG and APF modules to be installed in the same cabinet, so that the capacity is larger. Reducing the volume of the low-pressure SVG and APF modules is to increase the volume density of the low-pressure SVG and APF modules. The low-voltage SVG and APF modules have high-voltage and high-current primary parts and secondary microelectronic devices which are easy to be subjected to electromagnetic interference, and the low-voltage (micro-voltage) and the low-current (micro-current) primary parts and the secondary microelectronic devices are used for generating strong electromagnetic interference, so that the key technology of the low-volume and high reliability of the low-voltage SVG and APF modules is an EMC (electromagnetic compatibility) technology of a primary circuit and a secondary circuit of the low-voltage SVG and APF modules.
The conventional low-voltage SVG and APF modules generally adopt a method for simply increasing the distance between a primary component and a secondary component in order to improve EMC performance, so that the volume of the low-voltage SVG and APF modules is increased, the cost is increased, and the operation reliability of the low-voltage SVG and APF modules is affected due to unreasonable structural treatment.
Disclosure of Invention
The invention aims to solve the technical problem of providing a modular structure of a low-voltage SVG/APF module with high-quality EMC, which is characterized in that components are reasonably distributed in a case and are reasonably connected and shielded with each other, so that the low-voltage SVG/APF module is smaller in size.
In order to solve the technical problems, the invention adopts the following technical scheme:
a modular mechanism of a low-voltage SVG/APF module of high-quality EMC comprises a case assembly, a primary strong-interference reactance assembly, a primary weak-interference capacitance assembly, a primary weak-interference IGBT assembly, a secondary easily-interfered intelligent assembly, a secondary measurement primary interface assembly, a secondary driving primary interface assembly and a secondary conversion weak-interference direct-current power supply, wherein a middle shielding plate, a shielding box and a shielding wiring groove are arranged in the case assembly, the middle shielding plate divides a case inner cavity into an upper installation space and a lower installation space, the primary weak-interference reactance assembly is arranged in the upper installation space, the primary strong-interference capacitance assembly is arranged in the lower installation space, the primary weak-interference IGBT assembly is arranged on the front side of the middle shielding plate, the secondary easily-interfered intelligent assembly and the secondary conversion weak-interference direct-current power supply are arranged in the shielding box, and the secondary measurement primary interface assembly is arranged in the shielding wiring groove.
Further, the machine case subassembly contains front panel, the front bezel, the rear panel, the left side board, the right side board, well shield plate, the shielding box, upper cover plate and lower cover plate, the front bezel, the rear panel, left side board and right side board constitution frame, well shield plate adopts iron material and the level is fixed in the middle of the frame divide into upper portion installation space and lower part installation space with the frame, the upper cover plate can dismantle the setting in the frame upside, the lower cover plate can dismantle the setting in the frame downside, the shielding box sets up in the front side of frame lower part installation space and fixes on the frame through the shielding support, the rear panel outside is provided with A looks power binding post, B looks power binding post, C looks power binding post, N line power binding post, distribution CT secondary binding post and communication binding post, the front side of front bezel is provided with the fan.
Further, be provided with shielding box parting bead in the shielding box, shielding box parting bead separates the shielding box into intelligent interval and DC power supply interval, be provided with measurement input shielding wiring groove and control output shielding wiring groove on the shielding support, left side board and right side board inboard in well shielding plate lower part have left shielding plate and right shielding plate respectively, be provided with left shielding wiring groove between left side board and the left shielding plate, be provided with right shielding wiring groove between right side board and the right shielding plate, well shielding plate transversely bends and forms well shielding wiring groove, well shielding wiring groove has well mounting panel below, form half shielding wiring groove between the condenser mounting panel of a weak interference capacitance subassembly and well shielding plate.
Further, the primary strong interference reactance assembly comprises a reactance mounting plate, an A-phase reactance component, a B-phase reactance component and a C-phase reactance component which are arranged on the reactance mounting plate, wherein the reactance mounting plate is arranged on the middle shielding plate and is positioned at the rear side of an installation space on the upper portion of the machine frame, and the A-phase reactance component, the B-phase reactance component and the C-phase reactance component respectively comprise a large reactor, a small reactor, a starting relay and a fuse.
Further, the primary weak interference capacitance component comprises a capacitor mounting plate, a positive energy storage capacitor bank, a negative energy storage capacitor bank, an A-phase filter capacitor, a B-phase filter capacitor, a C-phase filter capacitor, an A-phase soft start capacitor, a B-phase soft start capacitor and a C-phase soft start capacitor which are arranged on the capacitor mounting plate.
Further, the primary weak interference IGBT component comprises an IGBT radiator and an A-phase composite IGBT tube, a B-phase composite IGBT tube and a C-phase composite IGBT tube which are arranged on the lower side of the IGBT radiator, wherein the IGBT radiator is located in the upper installation space of the frame, the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube are located in the lower installation space of the frame, the IGBT radiator comprises a radiator substrate and a radiator comb plate, the radiator substrate is fixed on the middle shielding plate, the radiator comb plate is arranged on the upper side of the radiator substrate, and the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube are respectively provided with an IGBT tube output end, an IGBT tube C+ end, an IGBT tube C-end, an IGBT tube N end and an IGBT tube driving connector.
Further, the secondary easily disturbed intelligent component sets up in intelligent interval, and the secondary easily disturbed intelligent component contains intelligent mainboard and intelligent connecting plate, and intelligent mainboard passes through main connection connector and connects intelligent connecting plate, is provided with measurement input connector, control output connector, power input connector, communication connector and fan connector on the intelligent connecting plate.
Further, the secondary measurement primary interface component comprises a measurement mounting plate, an A-phase IGBT output current sensor, a B-phase IGBT output current sensor, a C-phase IGBT output current sensor, a distribution voltage sensor, a distribution current sensor and an energy storage voltage sensor which are arranged on the measurement mounting plate, wherein the measurement mounting plate is arranged in a middle shielding wiring groove on a middle shielding plate, sensor input holes are arranged on the A-phase IGBT output current sensor, the B-phase IGBT output current sensor and the C-phase IGBT output current sensor, sensor input ends are arranged on the distribution voltage sensor, the distribution current sensor and the energy storage voltage sensor, the A-phase IGBT output current sensor, the B-phase IGBT output current sensor, the C-phase IGBT output current sensor, the distribution voltage sensor, the distribution current sensor and the energy storage voltage sensor are provided with sensor output ends, the sensor input end of the distribution voltage sensor is connected with the A-phase power supply wiring terminal, the B-phase power supply wiring terminal and the C-phase power supply wiring terminal through a left shielding wiring groove, a right shielding wiring groove or a half shielding wiring groove, the sensor input end of the distribution current sensor is connected with the cable of the distribution CT secondary wiring terminal through a half shielding wiring groove, a left shielding wiring groove or a right shielding wiring groove, the sensor input end of the energy storage voltage sensor is connected with the positive electrode of the positive energy storage capacitor bank, the negative electrode of the positive energy storage capacitor bank and the negative electrode of the negative energy storage capacitor bank through a half shielding wiring groove, a left shielding wiring groove or a right shielding wiring groove, the measurement input connector of the intelligent connecting plate is connected with the A-phase IGBT output current sensor, the B-phase IGBT output current sensor, A shielding magnetic ring is arranged in a cable at the sensor output end of the C-phase IGBT output current sensor, the shielding magnetic ring passes through a measurement input shielding wiring groove and a left shielding wiring groove or a right shielding wiring groove, a shielding magnetic ring is arranged in a cable at the sensor output end of a measurement input connector, a distribution voltage sensor, a distribution current sensor and an energy storage voltage sensor, which are connected with an intelligent connecting plate, the shielding magnetic ring passes through the measurement input shielding wiring groove and the left shielding wiring groove or the right shielding wiring groove, and a shielding magnetic ring is arranged in a cable at the communication connector and the communication wiring terminal, which are connected with the intelligent connecting plate, and the shielding magnetic ring passes through the measurement input shielding wiring groove and the left shielding wiring groove or the right shielding wiring groove.
Further, the secondary driving primary interface component comprises a driving circuit board and an A-phase driving circuit, a B-phase driving circuit and a C-phase driving circuit which are arranged on the driving circuit board, wherein the driving circuit board is arranged on the front side or the lower side of the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube, a driving input connector and a driving output connector are arranged on the A-phase driving circuit, the B-phase driving circuit and the C-phase driving circuit, a shielding magnetic ring is arranged in a cable of the driving input connector connected with the intelligent connecting plate, the B-phase driving circuit and the C-phase driving circuit and is shielded by the control output wiring groove, and the driving output connectors of the A-phase driving circuit, the B-phase driving circuit and the C-phase driving circuit are connected with the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube through cables.
Further, the secondary conversion weak interference direct current power supply is arranged in a direct current power supply interval, a power input connector and a power output connector are arranged on the secondary conversion weak interference direct current power supply, a cable for connecting the power input connector with an A-phase power supply wiring terminal, a B-phase power supply wiring terminal or a C-phase power supply wiring terminal passes through a left shielding wiring groove or a right shielding wiring groove, and the power output connector is connected with the intelligent connecting plate power input connector through the cable.
Compared with the prior art, the invention has the following advantages and effects: the invention discloses a modular mechanism of a high-quality EMC low-voltage SVG/APF module, which reasonably divides hundreds of thousands of components forming the low-voltage SVG/APF module into components such as primary strong interference, primary weak interference, secondary easy interference, secondary interface and the like according to electromagnetic characteristics of the components, scientifically shields a chassis of the module, reasonably distributes the components in the chassis and reasonably connects and shields the components with each other, so that the low-voltage SVG/APF module has small volume, high reliability and low cost, and is neat and beautiful in the machine, and almost no cable is seen.
Drawings
Fig. 1 is a schematic diagram of a modular organization of a high quality EMC low voltage SVG/APF module of the present invention.
Fig. 2 is an a-direction cross-sectional view of a modular mechanism of a low-voltage SVG/APF module of the present invention for superior EMC.
Fig. 3 is a B-direction cross-sectional view of the componentization mechanism of a low-voltage SVG/APF module of the present invention for superior EMC.
Fig. 4 is a C-direction cross-sectional view of the componentization mechanism of a low-voltage SVG/APF module of the present invention for superior EMC.
Fig. 5 is a D-direction cross-sectional view of the componentization mechanism of the low-voltage SVG/APF module of the present invention for a superior EMC.
Fig. 6 is a schematic diagram of a primary weak interference IGBT assembly of the invention.
Detailed Description
In order to explain in detail the technical solutions adopted by the present invention to achieve the predetermined technical purposes, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some embodiments of the present invention, but not all embodiments, and that technical means or technical features in the embodiments of the present invention may be replaced without inventive effort, and the present invention will be described in detail below with reference to the accompanying drawings in combination with the embodiments.
As shown in fig. 1 and fig. 2, the modular mechanism of the low-voltage SVG/APF module with high-quality EMC of the present invention includes a chassis assembly 01, a primary strong interference reactance assembly 02, a primary weak interference capacitance assembly 03, a primary weak interference IGBT assembly 04, a secondary interference sensitive intelligent assembly 05, a secondary measurement primary interface assembly 06, a secondary driving primary interface assembly 07, and a secondary conversion weak interference dc power supply 08. The invention groups the components in the low-voltage SVG/APF module according to the strength of electromagnetic interference and the strength of electromagnetic interference tolerance, thereby independently designing the electromagnetic shielding of the components in different groups.
As shown in fig. 5, a middle shielding plate 016, a shielding box 017 and a shielding wiring groove 16 are arranged in the chassis assembly 01, the middle shielding plate 016 divides the chassis inner cavity into an upper installation space and a lower installation space, a primary strong interference reactance assembly 02 is arranged in the upper installation space, a primary weak interference capacitance assembly 03 is arranged in the lower installation space, a primary weak interference IGBT assembly 04 is arranged on the front side of the middle shielding plate 016, a secondary interference-sensitive intelligent assembly 05 and a secondary conversion weak interference direct current power supply 08 are arranged in the shielding box 017, and a secondary measurement primary interface assembly 06 is arranged in the shielding wiring groove 16. Wherein, the connecting cable between each component is arranged in the shielding wire slot 16, and the weak signal cable which is easy to be interfered is sleeved with a shielding magnetic ring 167.
As shown in fig. 3 and 5, the chassis assembly 01 includes a front panel 011, a front plate 012, a rear panel 013, a left plate 014, a right plate 015, a middle shielding plate 016, a shielding box 017, an upper cover plate 018 and a lower cover plate 019, wherein the front plate 012, the rear panel 013, the left plate 014 and the right plate 015 are welded and fixed to each other to form a rectangular frame, the middle shielding plate 016 is made of an iron material with a thickness not less than 1.5mm, and the middle shielding plate 016 is welded and fixed horizontally in the middle of the frame to divide the frame into an upper installation space and a lower installation space, and the frame is divided into an upper independent space and a lower independent space which are mutually shielded by the iron material of the middle shielding plate 016, so that electromagnetic shielding separation is performed on a large scale on each assembly. The upper cover plate 018 is detachably arranged on the upper side of the frame, the lower cover plate 019 is detachably arranged on the lower side of the frame, and the shielding box 017 is arranged on the front side of the installation space of the lower part of the frame, is abutted against the front plate 012 and is fixed on the frame through the shielding bracket 0174. The rear panel 013 is provided with a-phase power supply wiring terminal 09, B-phase power supply wiring terminal 10, C-phase power supply wiring terminal 11, N-line power supply wiring terminal 12, power distribution CT secondary wiring terminal 13 and communication wiring terminal 14 on the outside, and the front side of the front panel 012 is provided with a blower 15.
As shown in fig. 2, 3, 4 and 5, a shielding box division bar 0171 is arranged in the shielding box 017, the shielding box division bar 0171 divides the shielding box into an intelligent space 0172 and a direct current power supply space 0173, a measurement input shielding wiring groove 161 and a control output shielding wiring groove 162 are arranged on the shielding bracket 0174, a left shielding plate 014 and a right shielding plate 0151 are respectively arranged on the inner sides of a left side plate 014 and a right side plate 015 on the lower portion of the middle shielding plate 016, a left shielding wiring groove 163 is arranged between the left side plate 014 and the left shielding plate 0141, a right shielding wiring groove 164 is arranged between the right side plate 015 and the right shielding plate 0151, the middle shielding plate 016 is transversely bent to form a middle shielding wiring groove 0161, a middle mounting plate 0162 is arranged below the middle shielding wiring groove 0161, and a half shielding wiring groove 166 is formed between a capacitor mounting plate 031 and the middle shielding plate 016 of the primary weak interference capacitance component 03.
As shown in fig. 2, 3 and 5, the primary strong interference reactance assembly 02 includes a reactance mounting plate 021, and a-phase reactance component 022, a B-phase reactance component 023 and a C-phase reactance component 024 provided on the reactance mounting plate 021, the reactance mounting plate 021 is provided on a middle shielding plate 016 and is located on the rear side of the mounting space in the upper portion of the frame against the rear panel 013, and the a-phase reactance component 022, the B-phase reactance component 023 and the C-phase reactance component 024 include a large reactor 025, a small reactor 026, a start relay 027 and a fuse 028, respectively. One end of a large reactor 025 of the A phase reactance component 022, the B phase reactance component 023 and the C phase reactance component 024 passes through a sensor input hole 0601 of the A phase IGBT output current sensor 061, the B phase IGBT output current sensor 062 and the C phase IGBT output current sensor 063 and then is connected with an IGBT output end 0401 of the A phase composite IGBT tube 044, the B phase composite IGBT tube 045 and the C phase composite IGBT tube 046, the other end of the large reactor 025 is connected with one end of a starting relay 027, the other end of the starting relay 027 is connected with one end of a small reactor 026, the other end of the small reactor 026 is connected with one end of a fuse 028, and the other end of the fuse 028 is connected with an A phase power supply wiring terminal 09, a B phase power supply wiring terminal 10 and a C phase power supply wiring terminal 11.
As shown in fig. 2 and 4, the primary weak interference capacitance assembly 03 includes a capacitor mounting plate 031 and a positive energy storage capacitor bank 032, a negative energy storage capacitor bank 033, an a-phase filter capacitor 034, a B-phase filter capacitor 035, a C-phase filter capacitor 036, an a-phase soft start capacitor 037, a B-phase soft start capacitor 038, and a C-phase soft start capacitor 039 disposed on the capacitor mounting plate 031. The positive electrode of the positive energy storage capacitor group 032 on the capacitor mounting plate 031 is connected with the C+ end 0402 of the composite IGBT tube, the negative electrode of the positive energy storage capacitor group 032 is connected with the positive electrode of the negative energy storage capacitor group 033, the N end 0404 of the composite IGBT tube and the N-wire power supply connection terminal 12, and the negative electrode of the negative energy storage capacitor group 033 is connected with the C-end 0403 of the composite IGBT tube. The a-phase soft start capacitor 037, the B-phase soft start capacitor 038 and the C-phase soft start capacitor 039 are connected in parallel with the a-phase, B-phase and C-phase start relays 027, respectively. One end of the A phase filter capacitor 034, the B phase filter capacitor 035 and one end of the C phase filter capacitor 036 are connected with the N line power supply wiring terminal 12, and the other ends of the A phase filter capacitor 034, the B phase filter capacitor 035 and the C phase filter capacitor 036 are respectively connected with the other ends of the A phase starting relay 027, the B phase starting relay 027 and the C phase starting relay 026 and one end of the small reactor 026.
As shown in fig. 2, 5 and 6, the primary weak interference IGBT module 04 includes an IGBT radiator 041, and an a-phase composite IGBT tube 044, a B-phase composite IGBT tube 045 and a C-phase composite IGBT tube 046 disposed on the lower side of the IGBT radiator 041, the IGBT radiator 041 is disposed in an upper mounting space of the frame, the a-phase composite IGBT tube 044, the B-phase composite IGBT tube 045 and the C-phase composite IGBT tube 046 are disposed in a lower mounting space of the frame, the IGBT radiator 041 includes a radiator substrate 042 and a radiator comb plate 043, the radiator substrate 042 is fixed on a middle shielding plate 016, rectangular through holes for the a-phase composite IGBT tube 044, the B-phase composite IGBT tube 045 and the C-phase composite IGBT tube 046 to penetrate into the lower mounting space are opened on the middle shielding plate 016, the radiator comb plate 043 is disposed on the upper side of the radiator substrate 042, and the a-phase composite IGBT tube 044, the B-phase composite IGBT tube 045 and the C-phase composite IGBT tube 046 are respectively provided with an IGBT tube output end 1, a c+2, a C-phase IGBT tube 040, a-C040 4 and an IGBT tube drive 0405.
The secondary easily disturbed intelligent component 05 sets up in intelligent interval 0172, and the secondary easily disturbed intelligent component 05 contains intelligent mainboard 051 and intelligent connecting plate 052, and intelligent mainboard 051 connects intelligent connecting plate 052 through main connection connector 053, is provided with measurement input connector 0521 on the intelligent connecting plate 052, control output connector 0522, power input connector 0523, communication connector 0524 and fan connector 0525.
The secondary measurement primary interface component 06 comprises a measurement mounting plate 060, an A-phase IGBT output current sensor 061, a B-phase IGBT output current sensor 062, a C-phase IGBT output current sensor 063, a distribution voltage sensor 064, a distribution current sensor 065 and an energy storage voltage sensor 066 which are arranged on the measurement mounting plate 060, wherein the measurement mounting plate 060 is arranged in a middle shielding wiring groove 0161 on the middle shielding plate 016, sensor input holes 0601 are formed in the A-phase IGBT output current sensor 061, the B-phase IGBT output current sensor 062 and the C-phase IGBT output current sensor 063, a sensor input end 0602 is arranged on the distribution voltage sensor 064, the distribution current sensor 065 and the energy storage voltage sensor 066, and an output end 3 is arranged on the A-phase IGBT output current sensor 061, the B-phase IGBT output current sensor 063, the C-phase IGBT output current sensor 064, the distribution current sensor 065 and the energy storage voltage sensor 066. The cables connecting the sensor input 0602 of the distribution voltage sensor 064 with the a-phase power supply connection terminal 09, the B-phase power supply connection terminal 10 and the C-phase power supply connection terminal 11 pass through the left shielding wiring groove 163, the right shielding wiring groove 164 or the half shielding wiring groove 165, the cables connecting the sensor input 0602 of the distribution current sensor 065 with the distribution CT secondary connection terminal 13 pass through the half shielding wiring groove 165, the left shielding wiring groove 163 or the right shielding wiring groove 164, and the cables connecting the sensor input 0602 of the energy storage voltage sensor 066 with the positive electrode of the positive energy storage capacitor group 032, the negative electrode of the positive energy storage capacitor group 032 and the negative electrode of the negative energy storage capacitor group 033 pass through the half shielding wiring groove 165, the left shielding wiring groove 163 or the right shielding wiring groove 164.
The cables of the sensor output ends 0603 of the measurement input connector 0521, the A-phase IGBT output current sensor 061, the B-phase IGBT output current sensor 062 and the C-phase IGBT output current sensor 063, which are connected with the intelligent connecting plate 052, are provided with shielding magnetic rings 167, the cables of the measurement input connector 0521, the distribution voltage sensor 064, the distribution current sensor 065 and the energy storage voltage sensor 066, the cables of the sensor output ends 0603, which are connected with the intelligent connecting plate 052, are provided with shielding magnetic rings 167, the cables of the communication connector 0524, which are connected with the intelligent connecting plate 052, are provided with shielding magnetic rings 167, the cables of the measurement input shielding wiring grooves 161, the left shielding wiring grooves 163 or the right shielding wiring grooves 164, the cables of the communication connector 0524, which are connected with the communication wiring terminal 14, and the cables of the measurement input shielding wiring grooves 161, the left shielding wiring grooves 163 or the right shielding wiring grooves 164.
The secondary driving primary interface assembly 07 comprises a driving circuit board 071, an a-phase driving circuit 072, a B-phase driving circuit 073 and a C-phase driving circuit 074 which are arranged on the driving circuit board 071, wherein the driving circuit board 071 is arranged on the front side or the lower side of the a-phase composite IGBT tube 044, the B-phase composite IGBT tube 045 and the C-phase composite IGBT tube 046 and is fixedly connected with a middle shielding plate 016, the a-phase composite IGBT tube 044, the B-phase composite IGBT tube 045, the C-phase composite IGBT tube 046 or a shielding bracket 0174, and a driving input connector 0711 and a driving output connector 0712 are arranged on the a-phase driving circuit 072, the B-phase driving circuit 073 and the C-phase driving circuit 074. The cables connecting the control output connector 0522 of the intelligent connection board 052 with the drive input connectors 0711 of the A-phase drive circuit 072, the B-phase drive circuit 073 and the C-phase drive circuit 074 are provided with shielding magnetic rings 167, and the drive output connector 0712 of the A-phase drive circuit 072, the B-phase drive circuit 073 and the C-phase drive circuit 074 is connected with the composite IGBT tube drive connectors 0405 of the A-phase composite IGBT tube 044, the B-phase composite IGBT tube 045 and the C-phase composite IGBT tube 046 through the cables, and the fan connector 0525 of the intelligent connection board 052 is connected with the fan 15 through the cables.
The secondary conversion weak interference dc power 08 is disposed in the dc power interval 0173, and the secondary conversion weak interference dc power 08 is provided with a power input connector 081 and a power output connector 082. The cables connecting the power input connector 081 and the A-phase power connection terminal 09, the B-phase power connection terminal 10 or the C-phase power connection terminal 11 pass through the left shielding wiring groove 163 or the right shielding wiring groove 164, and the power output connector 082 is connected with the intelligent connection board 052 through the cables.
All inter-component connecting cables in the machine walk in the shielding wiring groove, and the weak signal cables which are easy to be interfered are sleeved with shielding magnetic rings, so that the machine has good EMC performance, is neat in the same time and has almost no bare cable.
The invention discloses a modular mechanism of a high-quality EMC low-voltage SVG/APF module, which reasonably divides hundreds of thousands of components forming the low-voltage SVG/APF module into components such as primary strong interference, primary weak interference, secondary easy interference, secondary interface and the like according to electromagnetic characteristics of the components, scientifically shields a chassis of the module, reasonably distributes the components in the chassis and reasonably connects and shields the components with each other, so that the low-voltage SVG/APF module has small volume, high reliability and low cost, and is neat and beautiful in the machine, and almost no cable is seen.
The present invention is not limited to the preferred embodiments, but is capable of modification and variation in detail, and other embodiments, such as those described above, of making various modifications and equivalents will fall within the spirit and scope of the present invention.
Claims (10)
1. A high-quality EMC's low pressure SVG/APF module's modularization mechanism, its characterized in that: the intelligent power supply comprises a case component, a primary strong interference reactance component, a primary weak interference capacitance component, a primary weak interference IGBT component, a secondary interference-sensitive intelligent component, a secondary measurement primary interface component, a secondary driving primary interface component and a secondary conversion weak interference direct current power supply, wherein a middle shielding plate, a shielding box and a shielding wiring groove are arranged in the case component, the inner cavity of the case is divided into an upper installation space and a lower installation space by the middle shielding plate, the primary weak interference reactance component is arranged in the upper installation space, the primary strong interference capacitance component is arranged in the lower installation space, the primary weak interference IGBT component is arranged on the front side of the middle shielding plate, the secondary interference-sensitive intelligent component and the secondary conversion weak interference direct current power supply are arranged in the shielding box, and the secondary measurement primary interface component is arranged in the shielding wiring groove.
2. The modular organization of high quality EMC low voltage SVG/APF modules of claim 1, wherein: the machine case subassembly contains front panel, the rear panel, the left side board, the right side board, well shield plate, the shielding box, upper cover plate and lower cover plate, the front panel, the rear panel, left side board and right side board constitution frame, well shield plate adopts the iron material and the level is fixed in the middle of the frame divide into upper portion installation space and lower part installation space with the frame, the upper cover plate can be dismantled and set up in the frame upside, the lower cover plate can be dismantled and set up in the frame downside, the shielding box sets up in the front side of frame lower part installation space and fix on the frame through the shielding support, the rear panel outside is provided with A looks power binding post, B looks power binding post, C looks power binding post, N line power binding post, distribution CT secondary binding post and communication binding post, the front side of front panel is provided with the fan.
3. The modular organization of high quality EMC low voltage SVG/APF modules of claim 2, wherein: the shielding box is characterized in that shielding box parting strips are arranged in the shielding box, the shielding box is divided into an intelligent interval and a direct current power supply interval by the shielding box parting strips, a measurement input shielding wiring groove and a control output shielding wiring groove are formed in a shielding support, a left shielding plate and a right shielding plate are respectively arranged on the inner sides of a left side plate and a right side plate of the lower portion of the middle shielding plate, a left shielding wiring groove is formed between the left side plate and the left shielding plate, a right shielding wiring groove is formed between the right side plate and the right shielding plate, the middle shielding plate is transversely bent to form a middle shielding wiring groove, a middle mounting plate is arranged below the middle shielding wiring groove, and a half shielding wiring groove is formed between a capacitor mounting plate of a primary weak interference capacitor assembly and the middle shielding plate.
4. The modular organization of high quality EMC low voltage SVG/APF modules of claim 2, wherein: the primary strong interference reactance assembly comprises a reactance mounting plate, and an A-phase reactance component, a B-phase reactance component and a C-phase reactance component which are arranged on the reactance mounting plate, wherein the reactance mounting plate is arranged on the middle shielding plate and is positioned at the rear side of an installation space on the upper part of the machine frame, and the A-phase reactance component, the B-phase reactance component and the C-phase reactance component respectively comprise a large reactor, a small reactor, a starting relay and a fuse.
5. The modular organization of high quality EMC low voltage SVG/APF modules of claim 2, wherein: the primary weak interference capacitance component comprises a capacitor mounting plate, a positive energy storage capacitor bank, a negative energy storage capacitor bank, an A-phase filter capacitor, a B-phase filter capacitor, a C-phase filter capacitor, an A-phase soft start capacitor, a B-phase soft start capacitor and a C-phase soft start capacitor which are arranged on the capacitor mounting plate.
6. The modular organization of high quality EMC low voltage SVG/APF modules of claim 2, wherein: the utility model provides a weak interference IGBT subassembly includes IGBT radiator and sets up the compound IGBT pipe of A looks, compound IGBT pipe of B looks and compound IGBT pipe of C looks at IGBT radiator downside, the IGBT radiator is located the upper portion installation space of frame, compound IGBT pipe of A looks, compound IGBT pipe of B looks and compound IGBT pipe of C looks are located the lower part installation space of frame, the IGBT radiator contains radiator base plate and radiator comb board, radiator base plate is fixed on well shield plate, radiator comb board sets up in radiator base plate upside, compound IGBT pipe of A looks, compound IGBT pipe of B looks and compound IGBT pipe of C looks are provided with the IGBT pipe output respectively, IGBT pipe C+ end, IGBT pipe C-end, IGBT pipe N end and IGBT pipe drive connector.
7. A modular mechanism for a high quality EMC low voltage SVG/APF module according to claim 3, wherein: the intelligent assembly is arranged in the intelligent interval, the intelligent assembly comprises an intelligent main board and an intelligent connecting board, the intelligent main board is connected with the intelligent connecting board through a main connecting connector, and a measuring input connector, a control output connector, a power input connector, a communication connector and a fan connector are arranged on the intelligent connecting board.
8. The modular organization of a high quality EMC low voltage SVG/APF module of claim 7, wherein: the secondary measurement primary interface component comprises a measurement mounting plate, an A-phase IGBT output current sensor, a B-phase IGBT output current sensor, a C-phase IGBT output current sensor, a distribution voltage sensor, a distribution current sensor and an energy storage voltage sensor which are arranged on the measurement mounting plate, wherein the measurement mounting plate is arranged in a middle shielding wiring groove on a middle shielding plate, sensor input holes are arranged on the A-phase IGBT output current sensor, the B-phase IGBT output current sensor and the C-phase IGBT output current sensor, sensor input ends are arranged on the distribution voltage sensor, the distribution current sensor and the energy storage voltage sensor, the A-phase IGBT output current sensor, the B-phase IGBT output current sensor, the C-phase IGBT output current sensor, the distribution voltage sensor, the distribution current sensor and the energy storage voltage sensor are provided with sensor output ends, the sensor input end of the distribution voltage sensor is connected with the A-phase power supply wiring terminal, the B-phase power supply wiring terminal and the C-phase power supply wiring terminal through a left shielding wiring groove, a right shielding wiring groove or a half shielding wiring groove, the sensor input end of the distribution current sensor is connected with the cable of the distribution CT secondary wiring terminal through a half shielding wiring groove, a left shielding wiring groove or a right shielding wiring groove, the sensor input end of the energy storage voltage sensor is connected with the positive electrode of the positive energy storage capacitor bank, the negative electrode of the positive energy storage capacitor bank and the negative electrode of the negative energy storage capacitor bank through a half shielding wiring groove, a left shielding wiring groove or a right shielding wiring groove, the measurement input connector of the intelligent connecting plate is connected with the A-phase IGBT output current sensor, the B-phase IGBT output current sensor, A shielding magnetic ring is arranged in a cable at the sensor output end of the C-phase IGBT output current sensor, the shielding magnetic ring passes through a measurement input shielding wiring groove and a left shielding wiring groove or a right shielding wiring groove, a shielding magnetic ring is arranged in a cable at the sensor output end of a measurement input connector, a distribution voltage sensor, a distribution current sensor and an energy storage voltage sensor, which are connected with an intelligent connecting plate, the shielding magnetic ring passes through the measurement input shielding wiring groove and the left shielding wiring groove or the right shielding wiring groove, and a shielding magnetic ring is arranged in a cable at the communication connector and the communication wiring terminal, which are connected with the intelligent connecting plate, and the shielding magnetic ring passes through the measurement input shielding wiring groove and the left shielding wiring groove or the right shielding wiring groove.
9. The modular organization of a high quality EMC low voltage SVG/APF module of claim 7, wherein: the secondary driving primary interface component comprises a driving circuit board and an A-phase driving circuit, a B-phase driving circuit and a C-phase driving circuit which are arranged on the driving circuit board, wherein the driving circuit board is arranged on the front side or the lower side of the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube, a driving input connector and a driving output connector are arranged on the A-phase driving circuit, the B-phase driving circuit and the C-phase driving circuit, a shielding magnetic ring is arranged in a cable for connecting the control output connector of the intelligent connecting plate with the driving input connector of the A-phase driving circuit, the B-phase driving circuit and the C-phase driving circuit and is connected with the driving output connector of the A-phase composite IGBT tube, the B-phase composite IGBT tube and the C-phase composite IGBT tube through cables, and a fan connector of the intelligent connecting plate is connected with the fan through the cable.
10. The modular organization of a high quality EMC low voltage SVG/APF module of claim 7, wherein: the secondary conversion weak interference direct current power supply is arranged in a direct current power supply interval, a power input connector and a power output connector are arranged on the secondary conversion weak interference direct current power supply, a cable for connecting the power input connector with an A-phase power supply wiring terminal, a B-phase power supply wiring terminal or a C-phase power supply wiring terminal passes through a left shielding wiring groove or a right shielding wiring groove, and the power output connector is connected with the intelligent connecting plate power input connector through the cable.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310498935.6A CN116544812A (en) | 2023-05-06 | 2023-05-06 | High-quality EMC's low pressure SVG/APF module's modular structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117713121A (en) * | 2024-02-05 | 2024-03-15 | 国网辽宁省电力有限公司 | SVG static reactive compensation generator |
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2023
- 2023-05-06 CN CN202310498935.6A patent/CN116544812A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117713121A (en) * | 2024-02-05 | 2024-03-15 | 国网辽宁省电力有限公司 | SVG static reactive compensation generator |
| CN117713121B (en) * | 2024-02-05 | 2024-04-19 | 国网辽宁省电力有限公司 | SVG static reactive compensation generator |
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