CN116528606A - Flexible patterning quantum dot LED and preparation method thereof - Google Patents
Flexible patterning quantum dot LED and preparation method thereof Download PDFInfo
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- CN116528606A CN116528606A CN202310554256.6A CN202310554256A CN116528606A CN 116528606 A CN116528606 A CN 116528606A CN 202310554256 A CN202310554256 A CN 202310554256A CN 116528606 A CN116528606 A CN 116528606A
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- insulating film
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 93
- 238000000059 patterning Methods 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000002347 injection Methods 0.000 claims description 18
- 239000007924 injection Substances 0.000 claims description 18
- 239000002105 nanoparticle Substances 0.000 claims description 15
- 230000005525 hole transport Effects 0.000 claims description 14
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 5
- 150000001768 cations Chemical class 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052736 halogen Inorganic materials 0.000 claims description 5
- 150000002367 halogens Chemical class 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 3
- 239000010406 cathode material Substances 0.000 claims description 2
- 239000004014 plasticizer Substances 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 99
- 230000003811 curling process Effects 0.000 abstract description 8
- 238000000926 separation method Methods 0.000 abstract description 4
- 239000002346 layers by function Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention relates to a flexible patterning quantum dot LED and a preparation method thereof. By introducing the patterned insulating film layer, the flexible patterned quantum dot LED is obtained, and the strain and stress applied to the quantum dot layer when the quantum dot layer is extruded are reduced. Because the elastic modulus of the quantum dot layer is far greater than that of other functional layers, the quantum dot layer is firstly damaged and separated in the folding or curling process of the flexible patterned quantum dot LED, the strain and stress of the quantum dot layer in the folding or curling process are reduced by introducing the patterned insulating film layer with smaller elastic modulus, the damage and the separation of the film layer of the quantum dot layer are avoided, the problem that the flexible patterned quantum dot LED fails is avoided/reduced, and the quality and the reliability of the flexible patterned quantum dot LED are improved.
Description
Technical Field
The invention belongs to the technical field of luminous display, and particularly relates to a flexible patterning quantum dot LED and a preparation method thereof.
Background
Quantum dot light emitting diodes are an emerging front display technology, which has a color that changes with the size of quantum dots and is more excellent in terms of color saturation, color purity, color rendering index, etc., than similar OLEDs. In the past few years, quantum dot light emitting diodes (QLEDs) have made a significant breakthrough in performance, and have shown wide promise in display applications.
In the face of large amounts of information or near-eye display requirements, next generation displays place higher demands on pixel resolution. The current methods for realizing the high resolution of the high quantum dot light emitting device include methods such as transfer printing, ink-jet printing, photoetching, nanoimprint and the like. Wherein the nanoimprint achieves ultra-high resolution of 9000 PPI. And with the development of near-eye display technology at present, the light-emitting device is necessarily required to be light-weighted and portable. Compared with organic materials with poor oxygen, water vapor and the like and poor mechanical properties used by the organic electroluminescent display device, the quantum dot light-emitting diode has lower requirements on packaging, thereby being more beneficial to preparing flexible devices.
However, the conventional flexible patterning quantum dot LED is easy to fail in the folding or bending process.
Disclosure of Invention
The invention aims to solve the problem that a flexible patterning quantum dot LED is easy to lose efficacy in the folding or curling process in the prior art, and therefore provides the flexible patterning quantum dot LED and a preparation method thereof.
In order to achieve the above purpose, the technical scheme of the invention is as follows: a flexible patterning quantum dot LED comprises a flexible substrate and a patterning insulating film layer, wherein in the flexible patterning quantum dot LED, the elastic modulus of the patterning insulating film layer is smaller than that of the quantum dot layer.
In an embodiment of the present invention, the method further includes an anode covering the flexible substrate, and the patterned insulating film layer covers the anode.
In an embodiment of the present invention, the semiconductor device further includes a hole injection layer and a hole transport layer, wherein the hole injection layer covers the anode, and the hole injection layer, the hole transport layer and the quantum dot layer are sequentially fabricated in the holes of the patterned insulating film layer.
In an embodiment of the present invention, the device further includes an electron transport layer and a cathode, where the electron transport layer and the cathode sequentially cover the patterned insulating film layer and the quantum dot layer.
In an embodiment of the present invention, the patterned insulating film layer is made by a nanoimprint process, a material of the patterned insulating film layer is selected from one of PMMA, PS, PVA and PC, and a plasticizer added in the material is selected from one of PEO and PEG.
In one embodiment of the invention, the flexible substrate is one of PEN and PET.
In an embodiment of the present invention, the hole injection layer is made of a solution of PEDOT: PSS modified with a low surface tension solvent including isopropyl alcohol; the hole transport layer is made of one of polymers TFB, PVK, poly and TPD; the quantum dot layer material is one of CdSe, inP and halogen perovskite.
In an embodiment of the present invention, the material of the electron transport layer is Zn0 nanoparticles, znO nanoparticles doped with metal cations, a mixture of Zn0 nanoparticles and a polymer; the cathode material is one or more of Au, ag and Al.
The invention also provides a preparation method based on the flexible patterning quantum dot LED, which comprises the steps of depositing a hole injection layer, a hole transport layer, a quantum dot layer and an electron transport layer on the prepared patterning insulating film layer by spin coating at one time, and evaporating a cathode on the electron transport layer by using an evaporation method.
In one embodiment of the present invention, the hole injection layer is made of a PEDOT: PSS solution modified by adding a low surface tension solvent including isopropyl alcohol; the hole transport layer is made of one of polymers TFB, PVK, poly and TPD; the quantum dot layer material is one of CdSe, inP and halogen perovskite; the electron transport layer is made of Zn0 nano-particles, znO nano-particles doped with metal cations, and a mixture of Zn0 nano-particles and a polymer; the cathode 280 is made of one or more of Au, ag and Al.
Compared with the prior art, the invention has the following beneficial effects: in the folding or curling process of the flexible patterning quantum dot LED, the quantum dot layer is firstly damaged and the film layer is separated, so that the function of the flexible patterning quantum dot LED is damaged, and the problem of failure of the flexible patterning quantum dot LED is caused; in the flexible patterning quantum dot LED provided by the invention, the patterning insulating film layer is introduced, so that the patterning quantum dot LED is obtained, and the strain and stress of the quantum dot layer when being extruded are improved. Because the elastic modulus of the quantum dot layer is far greater than that of other functional layers, the quantum dot layer is firstly damaged and separated in the folding or curling process of the flexible patterned quantum dot LED, the strain and stress of the quantum dot layer in the folding or curling process are reduced by introducing the patterned insulating film layer with smaller elastic modulus, the damage and separation of the quantum dot layer are avoided, the problem of reducing the failure of the flexible patterned quantum dot LED can be avoided, and the quality and reliability of the flexible patterned quantum dot LED are improved.
Drawings
FIG. 1 is a schematic view of a patterned insulating film according to an embodiment of the present invention; wherein (a) is a schematic top view of the patterned insulating film layer; (b) a schematic cross-sectional view of a patterned insulating film layer;
FIG. 2 is a schematic diagram of the structure of a flexible patterned quantum dot LED according to an embodiment of the present invention;
in the figure: 200-flexible patterned quantum dot LED; 210-a flexible substrate; 220-anode; 230-patterning the insulating film layer; 240-a hole injection layer; 250-hole transport layer; 260-quantum dot layer; 270-an electron transport layer; 280-cathode.
Detailed Description
The flexible patterned quantum dot LED according to the present invention is described in further detail below with reference to the accompanying drawings and specific examples. Advantages and features of the invention will become more apparent from the following description and from the claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
The invention provides a flexible patterning quantum dot LED, wherein a patterning insulating film layer is introduced, so that the elastic modulus of the patterning insulating film layer is smaller than that of the quantum dot layer in the flexible patterning quantum dot LED, the quantum dot layer is firstly damaged and separated in the folding or curling process of the flexible patterning quantum dot LED, the strain and stress of the quantum dot layer in the folding or curling process are reduced by introducing the patterning insulating film layer with smaller elastic modulus, and the damage and the separation of the film layer of the quantum dot layer are avoided, thereby avoiding/reducing the problem of failure of the flexible patterning quantum dot LED, and improving the quality and reliability of the flexible patterning quantum dot LED.
Fig. 1 is a schematic structural diagram of a patterned insulating film layer obtained by a nanoimprint process according to the present invention. (a) In a top view of the patterned insulating film layer, (b) in a cross-sectional view of the patterned insulating film layer, as shown in fig. 1, the hole diameter of the patterned insulating film layer can reach a nanometer level.
Please refer to fig. 2, which is a schematic diagram illustrating a structure of the flexible patterned quantum dot LED according to the present invention. As shown in fig. 2, the flexible patterned quantum dot LED200 includes a flexible substrate 210, an anode 220, and a patterned insulating film layer 230 covering the anode 220. In the flexible patterned quantum dot LED200, the patterned insulating film layer 220 has a smaller elastic modulus than the quantum dot layer 260. The flexible patterned quantum dot LED further includes a hole injection layer 240, a hole transport layer 250, a quantum dot layer 260, an electron transport layer 270, and a cathode 280, wherein the hole injection layer 240 covers the anode, the hole injection layer 240, the hole transport layer 250, and the quantum dot layer 260 are sequentially fabricated in the holes of the patterned insulating film layer 230, and the electron transport layer 270 and the cathode 280 sequentially cover the patterned insulating film layer 230 and the quantum dot layer 260.
Therefore, if the flexible patterned quantum dot LED200 is folded or curled, the elastic modulus of the patterned insulating film layer 230 is smaller than that of the quantum dot layer 260, so that the deformation of the patterned insulating film layer 230 will exceed that of the quantum dot layer 260, and therefore, under the same folding or curling degree, the strain, stress and strain of the quantum dot layer 260 of the invention will be reduced, thereby avoiding the damage to the quantum dot layer 260 and the separation of the film layers, and further avoiding/reducing the failure problem of the flexible patterned quantum dot LED200, and improving the quality and reliability of the flexible patterned quantum dot LED 200.
Preparation of flexible patterned quantum dot LED: and a hole injection layer 240, a hole transport layer 250, a quantum dot luminescent layer 260 and an electron transport layer 270 are deposited on the manufactured patterned insulating film layer by spin coating at one time, and a cathode 280 uses an evaporation method. The hole injection layer 240 is made of PEDOT: PSS solution modified by adding low-surface tension solvent such as isopropanol; the hole transport layer 250 is made of one of polymers TFB, PVK, poly and TPD; the quantum dot layer 260 is made of one of CdSe, inP and halogen perovskite; the material of the electron transport layer 260 is Zn0 nanoparticles, znO nanoparticles doped with metal cations, a mixture of Zn0 nanoparticles and a polymer; the cathode 280 is made of one or more of Au, ag and Al.
The above is a preferred embodiment of the present invention, and all changes made according to the technical solution of the present invention belong to the protection scope of the present invention when the generated functional effects do not exceed the scope of the technical solution of the present invention.
Claims (10)
1. The flexible patterning quantum dot LED is characterized by comprising a flexible substrate and a patterning insulating film layer, wherein the elastic modulus of the patterning insulating film layer is smaller than that of the quantum dot layer in the flexible patterning quantum dot LED.
2. The flexible patterned quantum dot LED of claim 1, further comprising an anode overlying the flexible substrate, wherein the patterned insulating film layer overlies the anode.
3. The flexible patterned quantum dot LED of claim 2, further comprising a hole injection layer and a hole transport layer, wherein the hole injection layer covers the anode, and the hole injection layer, the hole transport layer and the quantum dot layer are sequentially formed in the holes of the patterned insulating film layer.
4. The flexible patterned quantum dot LED of claim 1, further comprising an electron transport layer and a cathode, wherein the electron transport layer and the cathode sequentially cover the patterned insulating film layer and the quantum dot layer.
5. The flexible patterned quantum dot LED of any of claims 1-4, wherein the patterned insulating film layer is fabricated by a nanoimprint process, the patterned insulating film layer is made of a material selected from one of PMMA, PS, PVA and PC, and the plasticizer added to the material is selected from one of PEO and PEG.
6. The flexible patterned quantum dot LED of claim 1, wherein the flexible substrate is one of PEN, PET.
7. A flexible patterned quantum dot LED according to claim 3, wherein the hole injection layer is made of a low surface tension solvent modified PEDOT: PSS solution with the addition of isopropyl alcohol; the hole transport layer is made of one of polymers TFB, PVK, poly and TPD; the quantum dot layer material is one of CdSe, inP and halogen perovskite.
8. The flexible patterned quantum dot LED of claim 4, wherein the electron transport layer is made of Zn0 nanoparticles, znO nanoparticles doped with metal cations, a mixture of Zn0 nanoparticles and a polymer; the cathode material is one or more of Au, ag and Al.
9. A method for preparing the flexible patterned quantum dot LED according to any one of claims 2 to 8, wherein a hole injection layer, a hole transport layer, a quantum dot layer and an electron transport layer are deposited on the prepared patterned insulating film layer by spin coating at one time, and a cathode is evaporated on the electron transport layer by using an evaporation method.
10. The method for preparing the flexible patterned quantum dot LED according to claim 9, wherein the hole injection layer is prepared by adding solvent modified PEDOT with low surface tension comprising isopropanol to PSS solution; the hole transport layer is made of one of polymers TFB, PVK, poly and TPD; the quantum dot layer material is one of CdSe, inP and halogen perovskite; the electron transport layer is made of Zn0 nano-particles, znO nano-particles doped with metal cations, and a mixture of Zn0 nano-particles and a polymer; the cathode 280 is made of one or more of Au, ag and Al.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554256.6A CN116528606A (en) | 2023-05-17 | 2023-05-17 | Flexible patterning quantum dot LED and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310554256.6A CN116528606A (en) | 2023-05-17 | 2023-05-17 | Flexible patterning quantum dot LED and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116528606A true CN116528606A (en) | 2023-08-01 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310554256.6A Pending CN116528606A (en) | 2023-05-17 | 2023-05-17 | Flexible patterning quantum dot LED and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116528606A (en) |
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2023
- 2023-05-17 CN CN202310554256.6A patent/CN116528606A/en active Pending
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