CN116525664A - Quantum dot ratio frequency adjusting device and semiconductor quantum chip - Google Patents
Quantum dot ratio frequency adjusting device and semiconductor quantum chip Download PDFInfo
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- G—PHYSICS
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Abstract
The invention discloses a quantum dot ratio frequency adjusting device and a semiconductor quantum chip, and relates to the technical field of quantum computing. The device comprises: the front projection pattern of the micro-magnet on the surface of the quantum dot device comprises a gap area, and the front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area; and the antenna is used for generating a corresponding magnetic field according to the current flowing through the antenna, and coupling the corresponding magnetic field with the magnetic field generated after the magnetization of the micro-magnet so as to adjust the ratio frequency of the quantum dot device. By implementing the quantum dot ratio frequency adjusting device and the semiconductor quantum chip disclosed by the embodiment of the application, the quantum dot ratio frequency can be accurately and efficiently controlled, and further semiconductor quantum calculation can be efficiently executed; meanwhile, extra microwave devices are avoided being introduced, and the chip design is simplified.
Description
Technical Field
The invention relates to the technical field of quantum computing, in particular to a quantum dot ratio frequency adjusting device and a semiconductor quantum chip.
Background
Quantum computing is a novel computing mode for computing by regulating and controlling quantum information units according to quantum mechanics rules, and quantum information units (quantum bits) of the quantum computing mode follow the superposition state principle, so that quantum information processing has greater potential in efficiency than a traditional computer, and therefore, great research heat is obtained in recent years. With the deep research, it is found that the time length of the quantum bit capable of maintaining the quantum state, the number of the quantum bits connected in the quantum system, and the accuracy of the quantum system are three important factors for the breakthrough of the quantum computing technology. Electron spin is an implementation of a quantum gate, the hardware of which is implemented as a quantum dot device. The ratio frequency of electron spin inversion is an important influence factor of dephasing and attenuation in the quantum gate operation time, and on one hand, the dephasing effect can be inhibited by properly increasing the ratio frequency; on the other hand, too high a ratio frequency can cause population leakage, so that the quantum bit is relaxed from a high energy level to a low energy level through a leakage channel, and the accuracy of quantum computation is further affected. Therefore, the fine control of the pull ratio frequency of the quantum dots is an important factor for improving the accuracy of a quantum computer based on spin quantum bits.
In the prior art, zeeman frequency difference is generated between the channel spin quantum bits by adopting a non-uniform stray magnetic field, and then electric dipole spin resonance is driven by microwave flash, so that the spin is indirectly operated to rapidly turn over. Microwave pulses need to be applied by additional devices and spin manipulation is inefficient. Therefore, there is a need for a device for adjusting the pull-ratio frequency of a quantum dot and a semiconductor quantum chip, which utilize the local adjustability of the gradient of the transverse component of a magnetic field generated by an adjustable constant current flowing through an antenna to adjust the quantum dot, obtain the optimal pull-ratio frequency, realize the full electric control and efficient inversion of the spin inversion of electrons, and finally realize the spin bit operation with high fidelity.
Disclosure of Invention
In order to solve the problems that in the prior art, a microwave device is required to be additionally introduced for adjusting the pull ratio frequency of a quantum dot and the spin control efficiency is low, the embodiment of the invention provides a quantum dot pull ratio frequency adjusting device and a semiconductor quantum chip, and the pull ratio frequency of the quantum dot is adjusted by utilizing the local adjustability of the transverse component gradient of a magnetic field generated by an adjustable constant current flowing through an antenna; simultaneously, the micro-magnet is utilized to enhance the spin manipulation efficiency of the quantum dot.
In order to solve one or more of the above technical problems, the technical solution adopted by the present invention is as follows:
in a first aspect, a device for adjusting a pull ratio frequency of a quantum dot is provided, including:
the micro-magnet is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet on the surface of the quantum dot device comprises a gap area, a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, and the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna is arranged in a second area and used for generating a second magnetic field according to current flowing through the antenna, coupling the second magnetic field with the first magnetic field and adjusting the ratio frequency of the quantum dot device, wherein the second area is an area of the surface of the quantum dot device except the first area.
Further, the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device comprises:
a first micro-magnet region, a second micro-magnet region, and a third micro-magnet region;
the third micro-magnet region is connected with the first micro-magnet region and the second micro-magnet region, and a gap region is arranged between the first micro-magnet region and the second micro-magnet region.
Further, the first micro-magnet area is rectangular, the second micro-magnet area is rectangular, and the third micro-magnet area is rectangular;
the first micro-magnet area and the second micro-magnet area are arranged on one side of the long side of the third micro-magnet area, and the long side of the third micro-magnet area is collinear with the adjacent long sides of the first micro-magnet area and the second micro-magnet area;
the first micro-magnet region broadsides and the second micro-magnet region broadsides are arranged in parallel, the gap region is arranged between the first micro-magnet region broadsides and the adjacent second micro-magnet broadsides, and the gap width is the gap distance between the first micro-magnet region broadsides and the second micro-magnet broadsides.
Further, the length of the long side of the first micro-magnet area is a first length, the length of the long side of the second micro-magnet area is a second length, and the length of the long side of the third micro-magnet area is a third length;
the third length is less than the sum of the first length and the second length and the void spacing.
Further, the first micro-magnet region is congruent with the second micro-magnet region.
Further, the micro-magnets are made of a magnetic material.
Further, the magnetic material is a ferromagnetic material.
Further, the ferromagnetic material is cobalt.
Further, the antenna includes: an antenna body;
The orthographic projection pattern of the antenna body on the surface of the quantum dot device is quadrilateral, so that the change trend of the transverse magnetic field gradient generated by the current flowing through the antenna body in the current direction is consistent;
the minimum distance between the orthographic projection pattern of the antenna body on the surface of the quantum dot device and the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device is the antenna distance.
Further, the quadrangle is trapezoid;
the trapezium comprises: the first bottom edge and the second bottom edge, wherein the length of the first bottom edge is smaller than that of the second bottom edge;
the direction of current flowing through the antenna body is directed from the first bottom side to the second bottom side.
Further, the trapezoid is a right trapezoid.
Further, the right waist of the right trapezoid is parallel to the side length of the third micro-magnet area.
Further, the antenna further includes:
the first connecting wire is connected with the first bottom edge and the coplanar waveguide, and the width of the first connecting wire is linearly increased along the direction of pointing to the coplanar waveguide along the first bottom edge;
the second connecting wire is connected with the second bottom edge and is connected with the grounding conductor, and the width of the second connecting wire linearly increases along the direction of the second bottom edge pointing to the grounding conductor; wherein the ground conductor is grounded.
Further, the antenna is an on-chip antenna.
In a second aspect, there is provided a semiconductor quantum chip including the quantum dot ratio frequency adjustment device according to the first aspect.
The technical scheme provided by the embodiment of the invention has the beneficial effects that:
by implementing the quantum dot ratio frequency adjusting device and the semiconductor quantum chip disclosed by the embodiment of the application, the accurate and efficient control of the quantum dot ratio frequency can be realized, and further the semiconductor quantum calculation can be efficiently executed; for a semiconductor quantum dot device, local tuning of a transverse component gradient of a driving magnetic field is realized by applying constant current with adjustable size to an on-chip antenna part in the device, and spin control efficiency of the quantum dot is enhanced under the action of a micro-magnet so as to ensure high accuracy of semiconductor quantum calculation; meanwhile, extra microwave devices are avoided being introduced, and the chip design is simplified.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic surface view of a silicon-based quantum dot device;
FIG. 2 is a schematic cross-sectional view of a surface structure of a silicon-based quantum dot device;
FIG. 3 is a schematic cross-sectional view of a surface structure of a SiGe heterojunction quantum dot device;
FIG. 4 is a schematic front projection of a surface of a quantum dot device;
FIG. 5 is a schematic diagram of front projection of a device for adjusting the pull ratio frequency of a quantum dot on the surface of a quantum dot device according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of an orthographic projection of a micro-magnet on a surface of a collar device according to an embodiment of the present invention;
FIG. 7 is a schematic illustration of a micro-magnet provided in an embodiment of the present invention;
fig. 8 is a schematic diagram of an antenna according to an embodiment of the present invention;
fig. 9 is a schematic diagram of a magnetic field generated by the device for adjusting the pull-ratio frequency of the quantum dot according to the embodiment of the invention.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is apparent that the described embodiments are only some examples of the present invention, not all examples. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like, as used in this disclosure, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The numerals in the drawings of the specification merely denote distinction of respective functional components or modules, and do not denote logical relationships between the components or modules. The word "comprising" or "comprises", and the like, means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof, but does not exclude other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", etc. are used merely to indicate relative positional relationships, which may also be changed when the absolute position of the object to be described is changed.
Hereinafter, various embodiments according to the present disclosure will be described in detail with reference to the accompanying drawings. Note that in the drawings, the same reference numerals are given to constituent parts having substantially the same or similar structures and functions, and repeated description thereof will be omitted.
Compared with a traditional semiconductor chip which carries out logic operation through electron transport in a grid control transistor, the semiconductor quantum chip encodes quantum bits through electron spin in grid control quantum dots. The quantum dot is a potential well structure with the size of only tens of nm, is formed on the surface of a semiconductor channel or a heterogeneous interface, and the surrounding grid electrode is applied with bias to provide in-plane restraint, so that the quantum dot with controllable chemical potential is formed, and the electron spin bound in the quantum dot can be accurately regulated. The quantum dot used for semiconductor quantum computation at present mainly adopts silicon base as a bearing material, and has the advantages of small size, long electron spin coherence time, high working temperature of the quantum dot bit and the like. According to different constraint strategies, silicon-based quantum dot devices are mainly classified into Silicon Metal-Oxide-Semiconductor (SiMOS), silicon/SiGe (Silicon germanium heterojunction), FDSOI, finFET, P-donor, and the like.
SiMOS and Si/SiGe employ planar hetero-interfaces as active layers, and the multi-layer metal gate stack provides lateral and vertical confinement. Specifically, siMOS is formed by sequentially growing an isotope purification 28Si epitaxial layer, an SiO2 oxide layer and an overlapped metal grid on a natural silicon substrate, and quantum dots are formed below a 28Si-SiO2 interface; the Si/SiGe is formed by sequentially growing a SiGe graded layer, a SiGe buffer layer, an isotope purification 28Si quantum well, a SiGe barrier layer, a Si cap and an overlapped metal gate on a natural silicon substrate, and quantum dots are formed below a 28Si quantum well-SiGe barrier layer interface. The metal gate includes a Plunger gate (Plunger) controlling chemical potential of quantum dots, a Barrier gate (Barrier) controlling tunneling between dots, a microwave gate (MW) transmitting a microwave flash signal, a Lead gate (Lead) connecting ohmic contacts, an electron reservoir (reserve) providing electrons, a single electron Sensor (SET) measuring charge state, and the like. Fig. 1 shows a schematic surface view of a silicon-based quantum dot device, schematically illustrating the orthographic projection position of the surface where the quantum is located, and the gate distribution.
The transverse component gradient induces artificial spin-orbit coupling, and drives EDSR by microwave flash resonance, and indirectly controls spin to overturn rapidly. It should be noted that the microwave flash, from an alternating voltage signal, will generate an alternating electric field, inducing an intrinsic spin-orbit coupling, which in the absence of a micro-magnet is very weak, making the spin manipulation very inefficient.
Aiming at the problems that a microwave device is required to be introduced for adjusting the pull ratio frequency of a quantum dot and the spin control efficiency is low in the prior art, the embodiment of the invention provides a quantum dot pull ratio frequency adjusting device and a semiconductor quantum chip, and the pull ratio frequency of the quantum dot is adjusted by utilizing the local adjustability of the transverse component gradient of a magnetic field generated by an adjustable constant current flowing through an antenna; simultaneously, the micro-magnet is utilized to enhance the spin manipulation efficiency of the quantum dot.
In one embodiment, a quantum dot ratio frequency adjustment device comprises:
the micro-magnet 100 is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet 100 on the surface of the quantum dot device comprises a gap area, a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, and the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna 200 is disposed in a second area, and is configured to generate a second magnetic field according to a current flowing through the antenna, couple with the first magnetic field, and adjust a pull ratio frequency of the quantum dot device, where the second area is an area of the surface of the quantum dot device other than the first area.
The quantum dot device sets gradually from the surface to internal direction: multi-gate layer, intermediate layer, silicon layer. The surface of the quantum dot device includes: a first region, a second region; the multi-grid layer is arranged in a first area, wherein the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern on the surface of the quantum dot device, and the second area is an area except the first area on the surface of the quantum dot device; the quantum dot device comprises at least one quantum dot, wherein the quantum dot is arranged at the interface between the intermediate layer and the silicon layer and is positioned at the side of the silicon layer and is arranged on a straight line.
The cross-sectional structures of the multi-gate layer, the intermediate layer, and the silicon layer are shown in fig. 2. Fig. 2 schematically illustrates the arrangement of layers, the material, specific dimensions and geometry of which are ultimately determined by the design parameters and fabrication process of the device. The quantum dot draw ratio frequency adjusting device disclosed by the application is suitable for SiMOS and Si/SiGe. For SiMOS, the multi-gate layer is usually a gate pattern formed by aluminum; the intermediate layer being an oxide, typically SiO 2 The silicon layer is 28 And (3) an epitaxial layer grown by Si purified isotopes. The quantum dots are formed in the silicon layer near Si-SiO 2 At the interface. For Si/SiGe, the multi-gate layer typically employs a gate pattern formed of aluminum; the intermediate layer is further divided into a Si cap layer adjacent to the poly-gate layer and a SiGe blocking layer adjacent to the silicon layer, as shown in fig. 3. Quantum dots are formed in the silicon layer near the Si-SiGe interface.
If the number of the quantum dots is greater than one, each quantum dot on the side is arranged right below the lead grid along a straight line. Fig. 1 shows an arrangement of two quantum dots, wherein the lead grid is a gray pattern longitudinally covering the two quantum dots.
Fig. 4 shows a schematic diagram of a quantum dot device range, and the split boundaries of the first and second regions.
Based on the above semiconductor quantum dot device structure, preferably, the front projection of the surface of the quantum dot device of the micro-magnet 100 is in a shape of a "convex" with respect to an axisymmetric pattern, and as shown in fig. 5, a void region is disposed on the symmetry axis of the front projection pattern of the micro-magnet; at least one quantum dot is in the range of the space area arranged on the orthographic projection of the surface of the quantum dot device; after the micro-magnet is magnetized, the vector quantum dots provide a longitudinal magnetic field for inducing at least one quantum dot to generate electron self-cock Mann frequency difference;
the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device comprises: a first micro-magnet region 110, a second micro-magnet region 120, and a third micro-magnet region 130. The third micro-magnet region 130 is connected to the first and second micro-magnet regions 110 and 120, and a void region is provided between the first and second micro-magnet regions 110 and 120.
Preferably, the first micro-magnetic area 110 is rectangular, the length of the long side of the first micro-magnetic area is a first length, the second micro-magnetic area 120 is rectangular, the length of the long side of the second micro-magnetic area is a second length, the third micro-magnetic area 130 is rectangular, and the length of the long side of the third micro-magnetic area is a third length;
the first and second micro-magnet regions 110 and 120 are disposed on one side of a third micro-magnet region long side that is collinear with the adjacent first and second micro-magnet region long sides; the first micro-magnet region broadside and the second micro-magnet region broadside are arranged in parallel, the gap region is arranged between the first micro-magnet region broadside and the adjacent second micro-magnet broadside, and the gap between the first micro-magnet region broadside and the second micro-magnet broadside is the gap width d M 。
The long side of the first micro-magnet area is a first length l M1 The long side of the second micro-magnet area is a second length l M2 The long side of the third micro-magnet area is a third length l M3 。
The width of the first micro-magnet area is a first width W M1 The width of the second micro-magnet area is a second width W M2 The width of the third micro-magnet area is a third width W M3 。
Preferably, the second micro-magnet region 120 is congruent with the first micro-magnet region 110 in shape, as shown in fig. 6.
The third length is less than the sum of the first length and the second length and the void spacing.
The micro-magnets are made of magnetic materials;
preferably, the magnetic material is a ferromagnetic material.
Preferably, the ferromagnetic material is cobalt.
The thickness of the micro-magnet is a first thickness t M As shown in fig. 7. In FIG. 7, the depth of the quantum dot from the surface of the quantum dot device is shown as h MQ 。
The antenna 200 comprises an antenna body 210, wherein the orthographic projection pattern of the antenna body 210 on the surface of the quantum dot device is quadrilateral, so that the variation trend of the transverse magnetic field gradient generated by the current flowing through the antenna body 210 in the current direction is consistent;
the minimum distance between the front projection pattern of the antenna body 210 on the surface of the quantum dot device and the front projection pattern of the micro-magnet 100 on the surface of the quantum dot device is the antenna distance S A 。
Preferably, as shown in fig. 8, the quadrilateral is trapezoidal.
The trapezium comprises:
first bottom edge W A,1 A second bottom edge W A,2 Wherein the length of the first bottom edge is smaller than the length of the second bottom edge; height of trapezoid, length of l A 。
The direction of current flowing through the antenna body is directed from the first bottom side to the second bottom side.
Preferably, the trapezoid is a right trapezoid;
the right-angle waist of the right trapezoid is parallel to the side length of the third micro-magnet area, and the length of the right-angle waist is l A 。
FIG. 8 also shows the depth of the quantum dots from the oxide surface, h AQ 。
The antenna further comprises:
a first connection line 221 connecting the first bottom side to the coplanar waveguide, the width of the first connection line linearly increasing in a direction in which the first bottom side points to the coplanar waveguide;
a second connecting line 222 connecting the second bottom edge with the ground conductor, the width of the second connecting line linearly increasing along the direction in which the second bottom edge points to the ground conductor; wherein the ground conductor is grounded.
The thickness of the antenna is the second thickness t A 。
Preferably, the antenna is an on-chip antenna.
For a two quantum dot device, driving spin flip involves three magnetic fields:
an external uniform static magnetic field (external magnetic field for short) is generated by a permanent magnet array or a superconducting solenoid of a dilution refrigerator and is used for electron spin degeneracy energy level in the Zeeman split quantum dots;
(II) a non-uniform stray magnetic field is generated by completely magnetizing the micro-magnet by an external magnetic field, and the longitudinal component induces electron self-cock Mann frequency difference and the transverse component gradient drives EDSR;
and (III) a non-uniform constant magnetic field, generated by the antenna applying a constant current, providing an additional adjustable magnetic field.
Taking a double quantum system as an example: the double quantum dots are assumed to be located in the xy plane and arranged along the direction Direction arrangement (I)>The direction is constrained by the heterogeneous interface. External magnetic field B 0 Edge->Direction application, micro-magnet is B 0 After magnetization, a non-uniform stray magnetic field B is generated M For B M Orthogonal decomposition, component->Direction and B 0 Parallel, smaller component->Direction and B 0 Perpendicular. Longitudinal component B when the antenna is not applying a constant current long And transverse component B trans As shown in fig. 9, the following are respectively:
the antenna applying a constant current I A Flow direction and B 0 The directions are parallel, and a non-uniform constant magnetic field B is generated A . According to the magnetic field superposition principle, B A Orthogonal component of (c) and B M Can be directly synthesized, and B after synthesis long And B trans The method comprises the following steps of:
it can be seen that the antenna applies a constant magnetic field generated by a constant current as an additional magnetic field of the stray magnetic field of the micro-magnet to increase B long Reduce B trans If the current is reversed, B is reduced long Increase B trans 。
Since the quantum dots themselves also have dimensions, the occupation area A of a single quantum dot in the xy plane is defined as 50×50nm 2 Distance d between centers of two quantum dots DQD 100nm. Two quantum dots are known to have coordinates p Q1 = (0, -50, 0) nm and p Q2 = (0, 50, 0) nm, then the longitudinal component B long The resulting zeeman frequency difference is:
wherein g.apprxeq.2 represents a silicon-based Lang factor, mu B =58 μev/T denotes the bohr magneton of electrons, h denotes the planck constant. Use edge The direction (external static field direction) field gradient represents the transverse component gradient, i.e. b trans ＝dB trans The Rabi frequency of two spin bits can be approximated:
wherein δr rms Representing electron wave function shift during EDSR, related to electric field fluctuations and orbital spacing, typically δr rms ～0.3-1nm。
In the aspect of geometric design of a quantum dot ratio frequency adjusting device, for a SiMOS device, a first width W M Take the value of 500nm, the first length l M The value is 2 mu m, and the gap width d M The value is 300-600nm, and the gap width d M Is a parameter of primary concern in the design of micro-magnets for controlling the longitudinal and transverse component gradients of stray magnetic fields. First bottom edge W A,1 The value is 100nm, and the waist length l is preset A The value was 1. Mu.m. The thickness of the micro-magnet is a first thickness t M The value is 200-250nm, and the depth h of the quantum dot from the surface of the quantum dot device MQ The value is 150-200nm. Thickness of antenna: second thickness t A The value of (2) is 100nm, and the antenna distance S A The value of the quantum dot is 350-400nm, and the depth h of the quantum dot from the surface of the oxide layer AQ 10nm; for Si/SiGe heterojunction devices, h AQ 30-40nm.
In another embodiment, a semiconductor quantum chip includes the quantum dot rader frequency modulation device of the first aspect.
Specifically, the method comprises the following steps:
the micro-magnet is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet on the surface of the quantum dot device comprises a gap area, a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, and the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna is arranged in a second area and used for generating a second magnetic field according to current flowing through the antenna, coupling the second magnetic field with the first magnetic field and adjusting the ratio frequency of the quantum dot device, wherein the second area is an area of the surface of the quantum dot device except the first area.
The orthographic projection pattern of the micro-magnet on the surface of the quantum dot device comprises: a first micro-magnet region, a second micro-magnet region, and a third micro-magnet region. The third micro-magnet region is connected with the first micro-magnet region and the second micro-magnet region, and a gap region is arranged between the first micro-magnet region and the second micro-magnet region.
Preferably, the first micro-magnet area is rectangular, the length of the long side of the first micro-magnet area is a first length, the second micro-magnet area is rectangular, the length of the long side of the second micro-magnet area is a second length, the third micro-magnet area is rectangular, and the length of the long side of the third micro-magnet area is a third length;
The first micro-magnet area and the second micro-magnet area are arranged on one side of the long side of the third micro-magnet area, and the long side of the third micro-magnet area is collinear with the adjacent long sides of the first micro-magnet area and the second micro-magnet area; the first micro-magnet region broadsides and the second micro-magnet region broadsides are arranged in parallel, the gap region is arranged between the first micro-magnet region broadsides and the adjacent second micro-magnet broadsides, and the gap width is the gap distance between the first micro-magnet region broadsides and the second micro-magnet broadsides.
The long side of the first micro-magnet area is a first length, the long side of the second micro-magnet area is a second length, and the long side of the third micro-magnet area is a third length.
The first micro-magnet region broadside is a first width, the second micro-magnet region broadside is a second width, and the third micro-magnet region broadside is a third width.
Preferably, the second micro-magnet region is congruent with the first micro-magnet region in shape.
The third length is less than the sum of the first length and the second length and the void spacing.
The micro-magnets are made of a magnetic material.
Preferably, the magnetic material is a ferromagnetic material.
Preferably, the ferromagnetic material is cobalt.
The thickness of the micro-magnet is a first thickness.
The antenna comprises an antenna body, wherein the orthographic projection pattern of the antenna body on the surface of the quantum dot device is quadrilateral, so that the change trend of the transverse magnetic field gradient generated by the current flowing through the antenna body in the current direction is consistent;
The minimum distance between the orthographic projection pattern of the antenna body on the surface of the quantum dot device and the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device is the antenna distance.
Preferably, the quadrilateral is trapezoidal.
The trapezium comprises:
the first bottom edge and the second bottom edge, wherein the length of the first bottom edge is smaller than that of the second bottom edge; the height of the trapezoid has a predetermined length.
The direction of current flowing through the antenna body is directed from the first bottom side to the second bottom side.
Preferably, the trapezoid is a right trapezoid.
Preferably, the right waist of the right trapezoid is parallel to the side length of the third micro-magnet area.
The antenna further comprises:
the first connecting wire is connected with the first bottom edge and the coplanar waveguide, and the width of the first connecting wire is linearly increased along the direction of pointing to the coplanar waveguide along the first bottom edge;
the second connecting wire is connected with the second bottom edge and is connected with the grounding conductor, and the width of the second connecting wire linearly increases along the direction of the second bottom edge pointing to the grounding conductor; wherein the ground conductor is grounded.
The thickness of the antenna is the second thickness t A 。
Preferably, the antenna is an on-chip antenna.
By implementing the quantum dot ratio frequency adjusting device and the semiconductor quantum chip disclosed by the embodiment of the application, the accurate and efficient control of the quantum dot ratio frequency can be realized, and further the semiconductor quantum calculation can be efficiently executed; for a semiconductor quantum dot device, local tuning of a transverse component gradient of a driving magnetic field is realized by applying constant current with adjustable size to an on-chip antenna part in the device, and spin control efficiency of the quantum dot is enhanced under the action of a micro-magnet so as to ensure high accuracy of semiconductor quantum calculation; meanwhile, extra microwave devices are avoided being introduced, and the chip design is simplified.
Any combination of the above optional solutions may be adopted to form an optional embodiment of the present invention, which is not described herein.
Example 1
A quantum dot rad frequency adjustment device comprising:
the micro-magnet 100 is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet 100 on the surface of the quantum dot device comprises a gap area, a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, and the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna 200 is disposed in a second area, and is configured to generate a second magnetic field according to a current flowing through the antenna, couple with the first magnetic field, and adjust a pull ratio frequency of the quantum dot device, where the second area is an area of the surface of the quantum dot device other than the first area.
The quantum dot device sets gradually from the surface to internal direction: multi-gate layer, intermediate layer, silicon layer. The surface of the quantum dot device includes: a first region, a second region; the multi-grid layer is arranged in a first area, wherein the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern on the surface of the quantum dot device, and the second area is an area except the first area on the surface of the quantum dot device; the quantum dot device comprises at least one quantum dot, wherein the quantum dot is arranged at the interface between the intermediate layer and the silicon layer and is positioned at the side of the silicon layer and is arranged on a straight line.
The cross-sectional structures of the multi-gate layer, the intermediate layer, and the silicon layer are shown in fig. 2. Fig. 2 schematically illustrates the arrangement of layers, the material, specific dimensions and geometry of which are ultimately determined by the design parameters and fabrication process of the device. The quantum dot draw ratio frequency adjusting device disclosed by the application is suitable for SiMOS and Si/SiGe. For SiMOS, the multi-gate layer is usually a gate pattern formed by aluminum; the intermediate layer being an oxide, typically SiO 2 The silicon layer is 28 And (3) an epitaxial layer grown by Si purified isotopes. The quantum dots are formed in the silicon layer near Si-SiO 2 At the interface. For Si/SiGe, the multi-gate layer typically employs a gate pattern formed of aluminum; the intermediate layer is further divided into a Si cap layer close to the multi-gate layer and a Si layer close to the Si layerA SiGe blocking layer of the layer is shown in fig. 3. Quantum dots are formed in the silicon layer near the Si-SiGe interface.
If the number of the quantum dots is greater than one, each quantum dot on the side is arranged right below the lead grid along a straight line. Fig. 1 shows an arrangement of two quantum dots, wherein the lead grid is a gray pattern longitudinally covering the two quantum dots.
Fig. 4 shows a schematic diagram of a quantum dot device range, and the split boundaries of the first and second regions.
Based on the above semiconductor quantum dot device structure, preferably, the front projection of the surface of the quantum dot device of the micro-magnet 100 is in a shape of a "convex" with respect to an axisymmetric pattern, and as shown in fig. 5, a void region is disposed on the symmetry axis of the front projection pattern of the micro-magnet; at least one quantum dot is in the range of the space area arranged on the orthographic projection of the surface of the quantum dot device; after the micro-magnet is magnetized, the vector quantum dots provide a longitudinal magnetic field for inducing at least one quantum dot to generate electron self-cock Mann frequency difference;
the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device comprises: a first micro-magnet region 110, a second micro-magnet region 120, and a third micro-magnet region 130. The third micro-magnet region 130 is connected to the first and second micro-magnet regions 110 and 120, and a void region is provided between the first and second micro-magnet regions 110 and 120.
The first micro-magnet region 110 is rectangular, the length of the long side of the first micro-magnet region is a first length, the second micro-magnet region 120 is rectangular, the length of the long side of the second micro-magnet region is a second length, the third micro-magnet region 130 is rectangular, and the length of the long side of the third micro-magnet region is a third length;
The first and second micro-magnet regions 110 and 120 are disposed on one side of a third micro-magnet region long side that is collinear with the adjacent first and second micro-magnet region long sides; the first and second micro-magnet region broadsides are arranged in parallel, and the gap region is arranged between the first and second micro-magnet region broadsidesThe distance between the wide sides of the two micro-magnets is the gap width d M 。
The long side of the first micro-magnet area is a first length l M1 The long side of the second micro-magnet area is a second length l M2 The long side of the third micro-magnet area is a third length l M3 。
The width of the first micro-magnet area is a first width W M1 The width of the second micro-magnet area is a second width W M2 The width of the third micro-magnet area is a third width W M3 。
The second micro-magnet region 120 is congruent with the first micro-magnet region 110 in shape, as shown in fig. 6.
The third length is less than the sum of the first length and the second length and the void spacing.
The micro-magnets are made of magnetic materials;
preferably, the magnetic material is a ferromagnetic material.
Preferably, the ferromagnetic material is cobalt.
The thickness of the micro-magnet is a first thickness t M As shown in fig. 7. In FIG. 7, the depth of the quantum dot from the surface of the quantum dot device is shown as h MQ 。
The antenna 200 comprises an antenna body 210, wherein the orthographic projection pattern of the antenna body 210 on the surface of the quantum dot device is quadrilateral, so that the variation trend of the transverse magnetic field gradient generated by the current flowing through the antenna body 210 in the current direction is consistent;
the minimum distance between the front projection pattern of the antenna body 210 on the surface of the quantum dot device and the front projection pattern of the micro-magnet 100 on the surface of the quantum dot device is the antenna distance S A 。
As shown in fig. 8, the quadrangle is trapezoidal.
The trapezium comprises:
first bottom edge W A,1 A second bottom edge W A,2 Wherein the length of the first bottom edge is smaller than the length of the second bottom edge; height of trapezoid, length of l A 。
The direction of current flowing through the antenna body is directed from the first bottom side to the second bottom side.
Preferably, the trapezoid is a right trapezoid;
the right-angle waist of the right trapezoid is parallel to the side length of the third micro-magnet area, and the length of the right-angle waist is l A 。
FIG. 8 also shows the depth of the quantum dots from the oxide surface, h AQ 。
The antenna further comprises:
a first connection line 221 connecting the first bottom side to the coplanar waveguide, the width of the first connection line linearly increasing in a direction in which the first bottom side points to the coplanar waveguide;
A second connecting line 222 connecting the second bottom edge with the ground conductor, the width of the second connecting line linearly increasing along the direction in which the second bottom edge points to the ground conductor; wherein the ground conductor is grounded.
The thickness of the antenna is the second thickness t A 。
The antenna is an on-chip antenna.
Example two
For a occupation area of 50×50nm 2 Along the positive x direction, in the same direction, an external magnetic field B 0 Under the action of x - = -25nm and x + The lateral components at =25 nm are respectively B trans(x-) =42.5 mT and B trans(x+) =57.5 mT, center x 0 Transverse component gradient b at =0nm trans(x0) = (57.5-42.5) mT/50nm = 0.3mT/nm. When the electron wave function is displaced by delta r rms At about 1nm, the Lawster frequency f is obtained Rabi ～4.20MHz。
Using a constant magnetic field B generated by an antenna A Compensating for transverse componentsApplying a constant current I A The magnetic field B generated A Expressed as: b (B) A ＝μ 0 I A /2πS A Wherein μ is 0 ＝4π×10 -7 T.m/A represents vacuum permeability, S A Is the antenna distance, according to S A Calculated at 400nm, when I A At 50mA, B A About 10mT. Due to the height h from the bottom of the antenna to the quantum dot position AQ Distance S of electric wire A Can be very small, B A As->Compensation->If the first bottom edge and the second bottom edge of the antenna body are not equal in width, B A (x - ) And B is connected with A (x + ) Difference exists, B is current regulation trans(x-) And B trans(x+) The variation is different, B trans(x0) A change occurs. When B is A(x-) ＝7mT，B A(x+) Transverse component gradient b at center =13 mT trans(x0) ＝[(57.5-7)-(42.5-13)]mT/50 nm=0.42 mT/nm. The ratio frequency is adjusted to f Rabi About 5.88MHz. Local tuning of the transverse component gradient is achieved, and the desired ratio frequency is adjusted.
Example III
A semiconductor quantum chip comprising the quantum dot ratio frequency adjusting device according to the first aspect.
Specifically, the device comprises:
the micro-magnet 100 is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet on the surface of the quantum dot device comprises a gap area, and a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, wherein the first area is a maximum area surrounded by the boundary of a multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna 200 is disposed in a second area, and is configured to generate a second magnetic field according to a current flowing through the antenna, and couple with the first magnetic field to adjust the ratio frequency of the quantum dot device, where the second area is an area of the surface of the quantum dot device other than the first area.
The quantum dot device sets gradually from the surface to internal direction: multi-gate layer, intermediate layer, silicon layer. The surface of the quantum dot device includes: a first region, a second region; the multi-grid layer is arranged in a first area, wherein the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern on the surface of the quantum dot device, and the second area is an area except the first area on the surface of the quantum dot device; the quantum dot device comprises at least one quantum dot, wherein the quantum dot is arranged at the interface between the intermediate layer and the silicon layer and is positioned at the side of the silicon layer and is arranged on a straight line.
The cross-sectional structures of the multi-gate layer, the intermediate layer, and the silicon layer are shown in fig. 2. Fig. 2 schematically illustrates the arrangement of layers, the material, specific dimensions and geometry of which are ultimately determined by the design parameters and fabrication process of the device. The quantum dot draw ratio frequency adjusting device disclosed by the application is suitable for SiMOS and Si/SiGe. For SiMOS, the multi-gate layer is usually a gate pattern formed by aluminum; the intermediate layer being an oxide, typically SiO 2 The silicon layer is 28 And (3) an epitaxial layer grown by Si purified isotopes. The quantum dots are formed in the silicon layer near Si-SiO 2 At the interface. For Si/SiGe, the multi-gate layer typically employs a gate pattern formed of aluminum; the intermediate layer is further divided into a Si cap layer adjacent to the poly-gate layer and a SiGe blocking layer adjacent to the silicon layer, as shown in fig. 3. Quantum dots are formed in the silicon layer near the Si-SiGe interface.
If the number of the quantum dots is greater than one, each quantum dot on the side is arranged right below the lead grid along a straight line. Fig. 1 shows an arrangement of two quantum dots, wherein the lead grid is a gray pattern longitudinally covering the two quantum dots.
Fig. 4 shows a schematic diagram of a quantum dot device range, and the split boundaries of the first and second regions.
Based on the above semiconductor quantum dot device structure, preferably, the front projection of the surface of the quantum dot device of the micro-magnet 100 is in a shape of a "convex" with respect to an axisymmetric pattern, and as shown in fig. 5, a void region is disposed on the symmetry axis of the front projection pattern of the micro-magnet; at least one quantum dot is in the range of the space area arranged on the orthographic projection of the surface of the quantum dot device; after the micro-magnet is magnetized, the vector quantum dots provide a longitudinal magnetic field for inducing at least one quantum dot to generate electron self-cock Mann frequency difference;
the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device comprises: a first micro-magnet region 110, a second micro-magnet region 120, and a third micro-magnet region 130. The third micro-magnet region 130 is connected to the first and second micro-magnet regions 110 and 120, and a void region is provided between the first and second micro-magnet regions 110 and 120.
The first micro-magnet region 110 is rectangular, the length of the long side of the first micro-magnet region is a first length, the second micro-magnet region 120 is rectangular, the length of the long side of the second micro-magnet region is a second length, the third micro-magnet region 130 is rectangular, and the length of the long side of the third micro-magnet region is a third length;
The first and second micro-magnet regions 110 and 120 are disposed on one side of a third micro-magnet region long side that is collinear with the adjacent first and second micro-magnet region long sides; the first micro-magnet region broadside and the second micro-magnet region broadside are arranged in parallel, the gap region is arranged between the first micro-magnet region broadside and the adjacent second micro-magnet broadside, and the gap between the first micro-magnet region broadside and the second micro-magnet broadside is the gap width d M 。
The long side of the first micro-magnet area is a first length l M1 The long side of the second micro-magnet area is a second length l M2 The long side of the third micro-magnet area is a third length l M3 。
The width of the first micro-magnet area is a first width W M1 The width of the second micro-magnet area is a second width W M2 The width of the third micro-magnet area is a third width W M3 。
The second micro-magnet region 120 is congruent with the first micro-magnet region 110 in shape, as shown in fig. 6.
The third length is less than the sum of the first length and the second length and the void spacing.
The micro-magnets are made of a magnetic material.
Preferably, the magnetic material is a ferromagnetic material.
Preferably, the ferromagnetic material is cobalt.
The thickness of the micro-magnet is a first thickness t M As shown in fig. 7. The quantum dot pitch is shown in FIG. 7The depth of the surface of the quantum dot device is h MQ 。
The antenna 200 comprises an antenna body 210, wherein the orthographic projection pattern of the antenna body 210 on the surface of the quantum dot device is quadrilateral, so that the variation trend of the transverse magnetic field gradient generated by the current flowing through the antenna body 210 in the current direction is consistent;
the minimum distance between the front projection pattern of the antenna body 210 on the surface of the quantum dot device and the front projection pattern of the micro-magnet 100 on the surface of the quantum dot device is the antenna distance S A 。
As shown in fig. 8, the quadrangle is trapezoidal.
The trapezium comprises:
first bottom edge W A,1 A second bottom edge W A,2 Wherein the length of the first bottom edge is smaller than the length of the second bottom edge; the height of the trapezoid has a predetermined length l A 。
The direction of current flowing through the antenna body is directed from the first bottom side to the second bottom side.
Preferably, the trapezoid is a right trapezoid.
Preferably, the right waist of the right trapezoid is parallel to the side length of the third micro-magnet area.
FIG. 8 also shows the depth of the quantum dots from the oxide surface, h AQ 。
The antenna further comprises:
a first connection line 221 connecting the first bottom side to the coplanar waveguide, the width of the first connection line linearly increasing in a direction in which the first bottom side points to the coplanar waveguide;
A second connecting line 222 connecting the second bottom edge with the ground conductor, the width of the second connecting line linearly increasing along the direction in which the second bottom edge points to the ground conductor; wherein the ground conductor is grounded.
The thickness of the antenna is the second thickness t A 。
The antenna is an on-chip antenna.
In particular, according to embodiments of the present application, the processes described above with reference to flowcharts may be implemented as computer software programs. For example, embodiments of the present application include a computer program product comprising a computer program loaded on a computer readable medium, the computer program comprising program code for performing the method shown in the flowcharts. In such an embodiment, the computer program may be downloaded and installed from a network via a communication device, or from memory, or from ROM. The above-described functions defined in the methods of the embodiments of the present application are performed when the computer program is executed by an external processor.
It should be noted that, the computer readable medium of the embodiments of the present application may be a computer readable signal medium or a computer readable storage medium, or any combination of the two. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples of the computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of the present application, a computer-readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device. Whereas in embodiments of the present application, the computer-readable signal medium may comprise a data signal propagated in baseband or as part of a carrier wave, with computer-readable program code embodied therein. Such a propagated data signal may take any of a variety of forms, including, but not limited to, electro-magnetic, optical, or any suitable combination of the foregoing. A computer readable signal medium may also be any computer readable medium that is not a computer readable storage medium and that can communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. Program code embodied on a computer readable medium may be transmitted using any appropriate medium, including but not limited to: electrical wires, fiber optic cables, RF (Radio Frequency), and the like, or any suitable combination thereof.
The computer readable medium may be contained in the server; or may exist alone without being assembled into the server. The computer readable medium carries one or more programs which, when executed by the server, cause the server to: acquiring a frame rate of an application on the terminal in response to detecting that a peripheral mode of the terminal is not activated; when the frame rate meets the screen-extinguishing condition, judging whether a user is acquiring screen information of the terminal; and controlling the screen to enter an immediate dimming mode in response to the judgment result that the user does not acquire the screen information of the terminal.
Computer program code for carrying out operations for embodiments of the present application may be written in any combination of one or more programming languages, including an object oriented programming language such as Java, smalltalk, C++ or the like and conventional procedural programming languages, such as the "C" programming language or similar programming languages. The program code may execute entirely on the user's computer, partly on the user's computer, as a stand-alone software package, partly on the user's computer and partly on a remote computer or entirely on the remote computer or server. In the case of a remote computer, the remote computer may be connected to the user's computer through any kind of network, including a Local Area Network (LAN) or a Wide Area Network (WAN), or may be connected to an external computer (for example, through the Internet using an Internet service provider).
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. In particular, for a system or system embodiment, since it is substantially similar to a method embodiment, the description is relatively simple, with reference to the description of the method embodiment being made in part. The systems and system embodiments described above are merely illustrative, wherein the elements illustrated as separate elements may or may not be physically separate, and the elements shown as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
The foregoing has outlined the detailed description of the preferred embodiment of the present application, and the detailed description of the principles and embodiments of the present application has been provided herein by way of example only to facilitate the understanding of the method and core concepts of the present application; also, as will occur to those of ordinary skill in the art, many modifications are possible in view of the teachings of the present application, both in the detailed description and the scope of its applications. In view of the foregoing, this description should not be construed as limiting the application.
The foregoing description of the preferred embodiments of the invention is not intended to limit the invention to the precise form disclosed, and any such modifications, equivalents, and alternatives falling within the spirit and scope of the invention are intended to be included within the scope of the invention.
Claims (15)
1. Quantum dot draw ratio frequency adjusting device, its characterized in that includes:
the micro-magnet is arranged in a first area of the quantum dot device, a first magnetic field is generated through magnetization, a front projection pattern of the micro-magnet on the surface of the quantum dot device comprises a gap area, a front projection position of the quantum dot device on the surface of the quantum dot device is positioned in the gap area, and the first area is a maximum area surrounded by the boundary of the multi-grid layer plane pattern of the quantum dot device on the surface of the quantum dot device;
the antenna is arranged in a second area, generates a second magnetic field according to current flowing through the antenna, and is coupled with the first magnetic field to adjust the pull ratio frequency of the quantum dot device, wherein the second area is an area of the surface of the quantum dot device except the first area.
2. The quantum dot rad frequency adjustment device according to claim 1, wherein an orthographic projection pattern of said micro-magnet on a surface of said quantum dot device comprises:
A first micro-magnet region, a second micro-magnet region, and a third micro-magnet region;
the third micro-magnet region is connected with the first micro-magnet region and the second micro-magnet region, and a gap region is arranged between the first micro-magnet region and the second micro-magnet region.
3. The quantum dot rad frequency adjustment device according to claim 2, wherein said first micro-magnet region is rectangular, said second micro-magnet region is rectangular, and said third micro-magnet region is rectangular;
the first micro-magnet area and the second micro-magnet area are arranged on one side of the long side of the third micro-magnet area, and the long side of the third micro-magnet area is collinear with the adjacent long sides of the first micro-magnet area and the second micro-magnet area;
the first micro-magnet region broadsides and the second micro-magnet region broadsides are arranged in parallel, the gap region is arranged between the first micro-magnet region broadsides and the adjacent second micro-magnet broadsides, and the gap between the first micro-magnet region broadsides and the second micro-magnet broadsides is the gap width.
4. The quantum dot ratio frequency adjustment device of claim 3, wherein the length of the long side of the first micro-magnet region is a first length, the length of the long side of the second micro-magnet region is a second length, and the length of the long side of the third micro-magnet region is a third length;
The third length is less than a sum of the first length and the second length and the void spacing.
5. The quantum dot rad rate frequency modulation device of claim 3, wherein said first micro-magnet region is congruent with said second micro-magnet region.
6. The quantum dot rad frequency adjustment device according to claim 1, wherein said micro-magnets are made of a magnetic material.
7. The quantum dot pull-up frequency adjustment device of claim 6, wherein the magnetic material is a ferromagnetic material.
8. The quantum dot pull-up frequency tuning device of claim 7, wherein the ferromagnetic material is cobalt.
9. The quantum dot rad frequency adjustment device according to claim 1, wherein said antenna comprises: an antenna body;
the orthographic projection pattern of the antenna body on the surface of the quantum dot device is quadrilateral, so that the change trend of the transverse magnetic field gradient generated by the current flowing through the antenna body in the current direction is consistent;
and the minimum distance between the orthographic projection pattern of the antenna body on the surface of the quantum dot device and the orthographic projection pattern of the micro-magnet on the surface of the quantum dot device is the antenna distance.
10. The quantum dot draw ratio frequency adjustment device of claim 9, wherein the quadrilateral is trapezoidal;
the trapezoid comprises: a first bottom edge and a second bottom edge, wherein the length of the first bottom edge is smaller than that of the second bottom edge;
the direction of current flowing through the antenna body is directed from the first bottom edge to the second bottom edge.
11. The quantum dot draw ratio frequency regulating device of claim 10, wherein the trapezoid is a right trapezoid.
12. The quantum dot draw ratio frequency regulating device of claim 11, wherein the right-angled waist of the right trapezoid is parallel to the long side of the third micro-magnet region.
13. The quantum dot rad frequency adjustment device of claim 10, wherein said antenna further comprises:
a first connection line connecting the first bottom edge and the coplanar waveguide, the width of the first connection line linearly increasing along the direction in which the first bottom edge points to the coplanar waveguide;
and the width of the second connecting wire linearly increases along the direction of the second bottom edge pointing to the grounding conductor, wherein the grounding conductor is grounded.
14. The quantum dot rad frequency modulation device of claim 1, wherein said antenna is an on-chip antenna.
15. A semiconductor quantum chip, characterized in that it comprises a quantum dot rad frequency adjustment device according to any one of claims 1-14.
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