CN116516318A - Preparation method of non-vacuum atomic layer deposition gallium oxide film - Google Patents
Preparation method of non-vacuum atomic layer deposition gallium oxide film Download PDFInfo
- Publication number
- CN116516318A CN116516318A CN202310486155.XA CN202310486155A CN116516318A CN 116516318 A CN116516318 A CN 116516318A CN 202310486155 A CN202310486155 A CN 202310486155A CN 116516318 A CN116516318 A CN 116516318A
- Authority
- CN
- China
- Prior art keywords
- gallium oxide
- spray head
- tmg
- substrate
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 42
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 238000000231 atomic layer deposition Methods 0.000 title claims description 43
- 239000010408 film Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000007921 spray Substances 0.000 claims abstract description 28
- 230000008021 deposition Effects 0.000 claims abstract description 24
- 239000011261 inert gas Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 10
- 239000010409 thin film Substances 0.000 claims abstract description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000007788 liquid Substances 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 5
- 238000009751 slip forming Methods 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000002834 transmittance Methods 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 239000012159 carrier gas Substances 0.000 claims description 4
- 239000003085 diluting agent Substances 0.000 claims description 4
- 238000010790 dilution Methods 0.000 claims description 4
- 239000012895 dilution Substances 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 229910001220 stainless steel Inorganic materials 0.000 abstract 1
- 239000010935 stainless steel Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 description 11
- 238000005259 measurement Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005086 pumping Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Abstract
The invention discloses a preparation method of a gallium oxide film deposited by a non-vacuum atomic layer, which comprises a non-vacuum ALD process and TMG+O 3 And (3) processing. The TMG liquid source is placed in a stainless steel cylinder, one end of the source cylinder is connected with a spray head, and an inert gas such as N is used 2 Carrying the TMG vapor out and finally spraying the TMG vapor out of the spray head. Similarly, O is 2 Gas cylinder and O 3 The generator is connected with the other end of the generator and a nozzle, when O 2 Through O 3 Ozone is generated during the generator and finally sprayed out by the spray head. TMG showerhead and O 3 Between the heads by inert gas (e.g. N 2 ) Is separated from TMG and O 3 Mixing. So that a gallium oxide thin film can be finally formed by the continuously formed Ga-O-Ga- … as a substrate moves back and forth under the showerhead. The method for preparing gallium oxide by non-vacuum ALD of the invention is beneficial to ALD oxidation both in deposition rate and equipment costGallium is used industrially.
Description
Technical Field
The invention discloses a preparation method of a gallium oxide film deposited by a non-vacuum atomic layer, belonging to the technical field of semiconductor device preparation.
Background
The application of the third generation wide bandgap semiconductor material in the photoelectric device has become the main research direction since this century, wherein gallium nitride (GaN) and silicon carbide (SiC) materials which have been developed in recent years have the advantages of excellent conductivity, high temperature resistance, high breakdown field and the like, and gallium oxide thin films (Ga 2 O 3 ) As a semiconductor material with wide band gap and high transparency, the gallium oxide film has been paid attention to by scholars, has the characteristics of low preparation cost, large forbidden band width (about 4.9 eV) and higher transmittance of more than 80 percent in the visible light range, and has the advantages of better physical stability and chemical stability, so the gallium oxide film has been widely applied to the fields of ultraviolet photodetectors, transparent conductive films and the like.
The characteristics of gallium oxide thin films are largely related to the deposition methods, and there are many deposition methods at present, including sputtering, pulsed laser deposition, chemical vapor deposition, atomic Layer Deposition (ALD), and the like. The atomic layer deposition can deposit a high-density film without holes, has high shape retention and is suitable for being used on a substrate with high depth-to-width ratio. Atomic layer deposition systems are classified into vacuum thermal ALD, vacuum plasma ALD, and non-vacuum ALD. Vacuum type thermal ALD and vacuum type plasma ALD are based on one deposition cavity, and different reaction precursors are introduced at different time points to form a chemical reaction deposition film, so that long deposition time is required; non-vacuum ALD uses the principle of thermal ALD, but has multiple deposition areas, so that precursors can be simultaneously introduced into the separate chambers, and different precursors are separated by inert gas, so that when a substrate continuously moves back and forth in the deposition areas, a thin film can be rapidly deposited, and the deposition rate can be tens of times that of vacuum ALD.
The first two (vacuum thermal and plasma) ALD gallium oxide films have been published in many papers, but no reports have been made on the preparation of gallium oxide by non-vacuum ALD.
In view of the fact that vacuum equipment is needed in the existing process for preparing the gallium oxide film by utilizing atomic layer deposition, the deposition rate is low or the gallium precursor is complex and difficult to synthesize, and the process is difficult to meet the industry. The invention provides a novel process for solving the technical defects.
Disclosure of Invention
At present, no non-vacuum ALD (atomic layer deposition) is available for preparing gallium oxide thin films, and the problems to be solved by the invention are that the deposition rate of vacuum ALD for depositing gallium oxide is too slow and the cost of vacuum equipment is high, so that the actual industrial application does not like the technology of ALD, although the quality of the ALD thin films is very high. Although the use of Ga is reported at present 2 (NMe 2 ) 6 The deposition rate can be slightly increased toHowever, the gallium precursor used requires complex synthesis procedures, which are several times more costly than the most commonly used TMG.
We use non-vacuum ALD and use the reaction of the least costly gallium precursor TMG and ozone to produce gallium oxide films, which can be deposited at up toCompared with TMG used in vacuum ALD, the deposition rate is 7-31 times higher. The invention is realized by the following technical means:
the invention discloses a preparation method of a non-vacuum atomic layer deposition gallium oxide film, which comprises the following steps:
(1) Filling liquid TMG in a bottle source, connecting one end of the source bottle with a spray head, taking TMG vapor out by inert gas, and then spraying by a first spray head;
(2) O is added with 2 Introducing O 3 In the generator, the other end of the generator is connected with a spray head, and the generated ozone is sprayed out by a second spray head;
(3) A movable substrate is placed in a reaction chamber of the atomic layer deposition equipment, and when the substrate moves back and forth below the spray head, a gallium oxide film is prepared through the continuously formed Ga-O-Ga- ….
Further, the first nozzle and the second nozzle are separated by a curtain of inert gas.
Further, when the substrate moves below the first nozzle, TMG reacts with OH groups on the surface to form:
Ga(CH 3 ) 3 +OH→S-O-Ga(CH 3 ) 3-x +xCH 4 。
further, when the substrate moves below the second spray head, O atoms react with methyl groups on the surface of the substrate:
S-O-Ga(CH 3 )+O→S-O-Ga-OH+CH 4 。
further, the bottle source temperature of step (1) is 0 ℃; the TMG carrier gas flow is 200sccm; the TMG diluent gas flow rate was 1800sccm.
Further, the O in the step (2) 3 The flow rate is 100sccm; the O is 3 The flow rate of the dilution gas was 3000sccm.
Further, the temperature of the substrate in the step (3) is 145-150 ℃; the moving speed of the substrate carrier is 60-180mm/s; the distance between the substrate and the first spray head and the distance between the substrate and the second spray head are both 0.3mm.
Further, the inert gas flow rate of the air curtain is 5000sccm.
Further, the inert gas includes, but is not limited to, N 2 。
The invention also discloses a gallium oxide film prepared by any one of the preparation methods.
Further, the deposition rate of the gallium oxide film isThe gallium oxide film has an average transmittance (unbuckled sapphire substrate) of 85% at a light wavelength of 300-900nm, a band gap of 5eV, and a stoichiometric ratio of O/Ga of 1.49.
The invention has the beneficial effects that:
1. the deposition rate of the gallium oxide film prepared by the process is 7-31 times of that of vacuum ALD.
2. The invention solves the technical problems that the common ALD gallium oxide deposition needs a vacuum deposition cavity, and the working pressure can reach below 1Pa, so the equipment cost is high. The non-vacuum ALD does not need a vacuum deposition cavity, only needs a common pumping mechanical pump to be connected with a pumping hole of a nozzle, pumps out redundant reactants, and has low equipment cost. Thus, the non-vacuum ALD process of the present invention for preparing gallium oxide is advantageous for ALD gallium oxide to be industrially applied both in terms of deposition rate and equipment cost.
Drawings
FIG. 1 is a schematic view of the apparatus of the present invention.
Detailed Description
The following describes the embodiments of the present invention in further detail with reference to the accompanying drawings. In the following detailed description of the embodiments of the present invention, the structures of the present invention are not drawn to a general scale, and the structures in the drawings are partially enlarged, deformed, and simplified, so that the present invention should not be construed as being limited thereto.
Example 1
A preparation method of a non-vacuum atomic layer deposition gallium oxide film comprises the following steps:
(1) Filling liquid TMG into a bottle source with a temperature of 0deg.C, connecting one end of the source bottle with a nozzle, and introducing inert gas N 2 Carrying out TMG vapor, and then spraying the TMG vapor by a first spray head, wherein the flow rate of TMG carrier gas is 200sccm, and the flow rate of TMG diluent gas is 1800sccm;
(2) O is added with 2 Introducing O 3 In the generator, the other end of the generator is connected with a nozzle, the generated ozone is sprayed out by a second nozzle, O 3 The flow rate is 100sccm; o (O) 3 The flow rate of the dilution gas is 3000sccm;
an inert gas N is used between the first nozzle and the second nozzle 2 The inert gas flow rate of the air curtain is 5000sccm.
When the substrate moves below the first spray head, TMG reacts with OH groups on the surface to form:
Ga(CH 3 ) 3 +OH→S-O-Ga(CH 3 ) 3-x +xCH 4 。
when the substrate moves to the lower part of the second spray head, the O atoms react with methyl groups on the surface of the substrate:
S-O-Ga(CH 3 )+O→S-O-Ga-OH+CH 4 。
(3) A movable substrate is placed in a reaction chamber of the atomic layer deposition equipment, the temperature of the substrate is 145 ℃, and the distance between the substrate and the first spray head and the distance between the substrate and the second spray head are both 0.3mm; gallium oxide films were produced by continuously forming Ga-O-Ga- … as the substrate was moved back and forth under the showerhead at a speed of 60 mm/s.
The deposition rate of the gallium oxide thin film was measured:
deposition rate measurement mode: and (3) attaching a heat-resistant adhesive tape to one area on the substrate, feeding the heat-resistant adhesive tape into a space atomic layer deposition system to deposit a film, tearing off the heat-resistant adhesive tape after the film is completed, and exposing the substrate, so that the height difference between the substrate and the film is formed. Film thickness can be measured using a surface profiler (Tencor D500), so deposition rate is (film thickness/ALD cycle number) time spent per cycle. The process time of the invention is determined by the substrate carrier.
Average penetration measurement mode: and (3) sending the sapphire substrate into a space atomic layer deposition system to deposit a film, testing the transmittance of the film under each light wavelength by using an ultraviolet-visible light spectrometer after the film is finished, and calculating the average light transmittance of 300-900 nm.
Band gap measurement: the transmittance and the reflectivity of the gallium oxide film are measured by an ultraviolet-visible light spectrometer, the absorption coefficient is calculated according to the transmittance and the reflectivity, and the band gap of the film can be obtained according to a Tauc plot method.
Measurement of stoichiometric ratio: the O/Ga atomic ratio can be obtained by utilizing a space atomic layer to deposit a gallium oxide film on a sapphire substrate and utilizing a photoelectron spectrometer (XPS) to measure the film element composition.
The deposition rate of the gallium oxide film is thatThe gallium oxide film has an average transmittance of 85% at a wavelength of 300nm, a band gap of 5eV and a stoichiometric ratio of O/Ga of 1.49.
Example 2
A preparation method of a non-vacuum atomic layer deposition gallium oxide film comprises the following steps:
(1) Filling liquid TMG into a bottle source with a temperature of 0deg.C, connecting one end of the source bottle with a nozzle, and introducing inert gas N 2 Carrying out TMG vapor, and then spraying the TMG vapor by a first spray head, wherein the flow rate of TMG carrier gas is 200sccm, and the flow rate of TMG diluent gas is 1800sccm;
(2) O is added with 2 Introducing O 3 In the generator, the other end of the generator is connected with a nozzle, the generated ozone is sprayed out by a second nozzle, O 3 The flow rate is 100sccm; o (O) 3 The flow rate of the dilution gas is 3000sccm;
(3) A movable substrate is placed in a reaction chamber of the atomic layer deposition equipment, the temperature of the substrate is 150 ℃, and the distance between the substrate and the first spray head and the distance between the substrate and the second spray head are all 0.3mm; gallium oxide films were produced by continuously forming Ga-O-Ga- … as the substrate was moved back and forth under the showerhead at a speed of 180 mm/s.
Test example 1
Table 1 is a literature for preparing gallium oxide thin films by atomic layer deposition, and all the documents use vacuum equipment, so that the deposition rate is low, and the industrial applicability is difficult.
TABLE 1 representative literature
From the results in table 1, it can be seen that in vacuum ALD using trimethylgallium as the precursor source, the deposition rate is determined by the gas feed and purge times, calculated as (film thickness/total number of cycles) × (precursor 1 feed time + precursor 1 purge time + precursor 2 feed time + precursor 2 purge time), the deposition rate isWhereas the deposition rate of the gallium oxide film prepared in example 1 of the present invention was +.>Is 7 to 31 times or more than that of vacuum ALD.
The foregoing description is only of the preferred embodiments of the present invention, and the embodiments are not intended to limit the scope of the invention, so that all changes made in the equivalent structures of the present invention described in the specification and the drawings are included in the scope of the invention.
Claims (10)
1. A preparation method of a non-vacuum atomic layer deposition gallium oxide film comprises the following steps:
(1) Filling liquid TMG in a bottle source, connecting one end of the source bottle with a spray head, taking TMG vapor out by inert gas, and then spraying by a first spray head;
(2) O is added with 2 Introducing O 3 In the generator, the other end of the generator is connected with a spray head, and the generated ozone is sprayed out by a second spray head;
(3) A movable substrate is placed in a reaction chamber of the atomic layer deposition equipment, and when the substrate moves back and forth below the spray head, a gallium oxide film is prepared through the continuously formed Ga-O-Ga- ….
2. The method of manufacturing according to claim 1, wherein:
the first nozzle and the second nozzle are separated by a curtain of inert gas.
3. The method of manufacturing according to claim 1, wherein:
when the substrate moves to the lower part of the first spray head, TMG reacts with OH groups on the surface to form:
Ga(CH 3 ) 3 +OH→S-O-Ga(CH 3 ) 3-x +xCH 4 。
4. the method of manufacturing according to claim 1, wherein:
when the substrate moves below the second spray head, O atoms react with methyl groups on the surface of the substrate:
S-O-Ga(CH 3 )+O→S-O-Ga-OH+CH 4 。
5. the method of manufacturing according to claim 1, wherein:
the temperature of the bottle source in the step (1) is 0 ℃; the TMG carrier gas flow is 200sccm; the TMG diluent gas flow rate was 1800sccm.
6. The method of manufacturing according to claim 1, wherein:
step (2) the O 3 The flow rate is 100sccm; the O is 3 The flow rate of the dilution gas was 3000sccm.
7. The method of manufacturing according to claim 1, wherein:
the temperature of the substrate in the step (3) is 145-150 ℃; the moving speed of the substrate carrier is 60-180mm/s; the distance between the substrate and the first spray head and the distance between the substrate and the second spray head are both 0.3mm.
8. The preparation method according to claim 2, wherein:
the inert gas flow of the air curtain is 5000sccm.
9. A gallium oxide thin film produced according to the production method of any one of claims 1 to 8.
10. The gallium oxide film of claim 9, wherein:
the deposition rate of the gallium oxide film is thatThe average transmittance of the gallium oxide film at the light wavelength of 300-900nm is 85%, the band gap is 5eV, and the stoichiometric ratio of O/Ga is 1.49.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310486155.XA CN116516318A (en) | 2023-05-04 | 2023-05-04 | Preparation method of non-vacuum atomic layer deposition gallium oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310486155.XA CN116516318A (en) | 2023-05-04 | 2023-05-04 | Preparation method of non-vacuum atomic layer deposition gallium oxide film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116516318A true CN116516318A (en) | 2023-08-01 |
Family
ID=87398937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310486155.XA Pending CN116516318A (en) | 2023-05-04 | 2023-05-04 | Preparation method of non-vacuum atomic layer deposition gallium oxide film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116516318A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117721446A (en) * | 2024-02-08 | 2024-03-19 | 理想晶延半导体设备(上海)股份有限公司 | Preparation method of indium tin oxide transparent conductive film |
-
2023
- 2023-05-04 CN CN202310486155.XA patent/CN116516318A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117721446A (en) * | 2024-02-08 | 2024-03-19 | 理想晶延半导体设备(上海)股份有限公司 | Preparation method of indium tin oxide transparent conductive film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8377803B2 (en) | Methods and systems for forming thin films | |
| Tsang | Chemical beam epitaxy of InP and GaAs | |
| Jones et al. | Overview of chemical vapour deposition | |
| TW202028505A (en) | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process | |
| CN116516318A (en) | Preparation method of non-vacuum atomic layer deposition gallium oxide film | |
| US20130078454A1 (en) | Metal-Aluminum Alloy Films From Metal Amidinate Precursors And Aluminum Precursors | |
| JP6302081B2 (en) | Atomic layer deposition of germanium or germanium oxide | |
| JP2013166965A (en) | Material for forming aluminum nitride-based thin film and method for producing the thin film | |
| Nguyen et al. | Atmospheric atomic layer deposition of SnO 2 thin films with tin (ii) acetylacetonate and water | |
| JP2022093208A (en) | MANUFACTURING METHOD OF Ga2O3 THIN FILM | |
| Ozeki et al. | Growth of GaAs and AlAs thin films by a new atomic layer epitaxy technique | |
| KR102314020B1 (en) | METHOD OF MAUFACTURING OF HEXAGONAL BORON NITRIDE (h-BN)/GRAPHENE IN-PLANE HETEROSTRUCTURE | |
| JP5110074B2 (en) | Crystal manufacturing method and light emitting device manufacturing method | |
| Chen et al. | The use of triisopropylantimony for the growth of InSb and GaSb | |
| Mishra et al. | Spatial analysis of ZnO thin films prepared by vertically aligned MOCVD | |
| KR101586792B1 (en) | A method for manufacturing a nanowire structure using a graphene and a nanowire structure manufactured by the same | |
| WO2010151430A1 (en) | Chemical vapor deposition using n,o polydentate ligand complexes of metals | |
| Pyymäki Perros | Thermal and plasma-enhanced atomic layer deposition: the study of and employment in various nanotechnology applications | |
| Meng et al. | Numerical simulation of GaN growth in a MOCVD process | |
| CN112458432B (en) | Nb growth by atomic layer deposition technologyxMethod for forming C film | |
| Yang | Area selective atomic layer deposition, and vacuum ultraviolet enhanced annealing for next generation nanofabrication | |
| Yeo et al. | Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs | |
| Rahman | Mechanistic Studies of Atomic Layer Deposition and Thermal Atomic Layer Etching Processes of Various Oxide Thin Films | |
| WO2013043507A1 (en) | Metal-aluminum alloy films from metal pcai precursors and aluminum precursors | |
| Haider | Atomic Layer Deposition of III-Nitrides and Metal Oxides: Their Application in Area Selective ALD |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |