CN116507131A - Memory based on magnetic substream effect - Google Patents

Memory based on magnetic substream effect Download PDF

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Publication number
CN116507131A
CN116507131A CN202310436009.6A CN202310436009A CN116507131A CN 116507131 A CN116507131 A CN 116507131A CN 202310436009 A CN202310436009 A CN 202310436009A CN 116507131 A CN116507131 A CN 116507131A
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insulator layer
magnetic
ferromagnetic
junction
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傅邱云
凌寒冰
叶钊
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Huazhong University of Science and Technology
Shenzhen Huazhong University of Science and Technology Research Institute
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Huazhong University of Science and Technology
Shenzhen Huazhong University of Science and Technology Research Institute
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management

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Abstract

The invention provides a memory based on a magnetic sub-flow effect, which belongs to the field of memories and comprises a substrate, a topological insulator unit, a magnetic sub-junction unit and an acoustic wave excitation unit; the magnetic sub-junction unit sequentially comprises the following components from bottom to top: a first ferromagnetic insulator layer, an antiferromagnetic layer, a second ferromagnetic insulator layer, and a heavy metal layer; the sound wave excitation unit is used for providing sound wave excitation for the magnetic sub-junction unit, exciting magnetic sub-flow in the magnetic sub-junction unit by means of phonon-magnetic interaction, the heavy metal layer in the magnetic sub-junction unit can embody the magnetic sub-flow in the form of reverse spin Hall effect voltage, the topological insulator changes the magnetic moment arrangement direction of the first ferromagnetic insulator layer in the magnetic sub-junction unit, and the magnitude of the magnetic sub-flow in the magnetic sub-junction unit is further adjusted, so that the high level and the low level of the magnetic sub-junction unit are realized. The invention uses topological insulator to turn over magnetic moment of magnetic sub-junction unit, and uses acoustic wave to excite and drive magnetic sub-junction, thus being a novel storage device structure.

Description

Memory based on magnetic substream effect
Technical Field
The invention belongs to the field of memories, and in particular relates to a memory based on a magnetic sub-flow effect.
Background
The 5G communication facility is a network infrastructure for realizing man-machine object interconnection, and the requirements of 5G communication comprise that the peak rate reaches 10Gbps, the spectrum efficiency is improved by 3 times compared with IMT-A, the mobility reaches 500 km/h, the time delay is as low as 1 millisecond, the user experience data rate reaches 100Mbps, and the connection density per square kilometer reaches 10 6 And the energy efficiency is improved by 100 times compared with IMT-A, and the flow density reaches 10Mbps per square meter. Today, where 5G communication is increasingly popular, the development of 6G technology has been calendared, and with such huge amounts of data, new challenges are presented to fast and stable storage and data processing technologies. According to information storage media and methods, there are three main types of storage technologies, semiconductor storage, magnetic storage, and optical storage. Among them, the magnetic memory technology has advantages of high data storage density and non-volatility compared with the other two technologies, and is one of the memory technologies which are widely focused at present.
Spin valves based on giant magnetoresistance effect (Giant Magneto Resistance, GMR) and tunneling magnetoresistance effect (Tunnel Magneto Resistance, TMR) are currently the dominant magnetic memory structures. The success of spin valves is that the spin properties of electrons are utilized more than in traditional electronic devices, but the disadvantages of high power consumption and easy heating of electronic devices are not overcome. The transport of spin properties may be independent of electron movement, and to further reduce the energy loss due to charge movement, a magnetic sub-junction is proposed. The main structure of the magnetic junction adopts an insulator material, and the size of the magnetic flux can be characterized by adopting heavy metal, so that the thermal effect and energy loss caused by electron transmission are greatly reduced, and the size of the internal magnetic flux is regulated and controlled by changing the orientation of the relative magnetization directions of the two magnetic insulating layers. Spin valves based on GMR and TMR effects reflect the switching state through resistance value changes, while the magnetic sub-junctions based on magnetic sub-flows are characterized mainly by reverse spin hall effect voltage changes.
The spin orbit torque (Spin Orbit Torque, SOT) is used for reversing the magnetic moment, and the current flowing in the material adjacent to the ferromagnetic layer is used for generating a net self-rotational flow by spin polarization at the interface of the Rashba-Edelstein effect and the spin Hall effect under the combined action of the Rashba-Edelstein effect and the spin Hall effect, and the net self-rotational flow transfers angular momentum to the ferromagnetic layer, so that the magnetic moment of the ferromagnetic layer is reversed. Patent document CN109585644a proposes a method in which a magnetoresistive tunnel junction is provided on a spin-orbit torque coupling layer, and when a current is applied to the spin-orbit torque coupling layer, a temperature difference exists between one side and the other side of the magnetoresistive tunnel junction in the current direction, and the directional inversion of the magnetic moment of the SOT-MRAM is realized under the effect of the temperature difference. At present, the excitation mode of the magnetic sub-flow in the magnetic sub-junction is temperature gradient excitation, and the temperature gradient excitation means that when a temperature difference exists in a magnet, the magnetic sub-flow is generated in the magnet along the direction of the temperature gradient. The temperature difference is used for magnetic moment overturning or used as a power source of a magnetic junction, so that the device is easy to heat, and the energy loss is improved. And the acoustic wave (Bulk Acoustic Wave, BAW) can also perform magnetic sub-flow excitation with high efficiency and energy saving, and replace temperature gradient excitation to be used as a magnetic sub-junction power source.
Disclosure of Invention
Aiming at the defects of the prior art, the invention aims to provide a memory based on a magnetic sub-flow effect, and aims to solve the problems of high power consumption and easy heating of the existing memory based on a spin valve structure and a temperature difference magnetic sub-junction.
To achieve the above object, the present invention provides a memory based on a magnetic substream effect, comprising: a topological insulator unit, a magnetic sub-junction unit and an acoustic wave excitation unit; the topological insulator unit, the magnetic sub-junction unit and the acoustic wave excitation unit are sequentially positioned on the substrate from bottom to top;
the topological insulator unit comprises a topological insulator layer and an electrode layer; the electrode layer is an electrode which is used for leading in current to the topological insulator layer; the topological insulator layer is used for overturning the adjacent ferromagnetic layer by using spin orbit moment when current is supplied;
the magnetic sub-junction unit comprises a first ferromagnetic insulator layer, an antiferromagnetic insulator layer, a second ferromagnetic insulator layer and a heavy metal layer from bottom to top; the first ferromagnetic insulator layer is used for changing the magnetic moment orientation under the action of spin orbit torque generated by the topological insulator layer; the magnetic moment of the second ferromagnetic insulator layer remains unchanged; the heavy metal layer is used for representing the magnetic sub-current transmitted in the second ferromagnetic insulator layer in the form of the reverse spin Hall effect voltage of the magnetic sub-junction; an antiferromagnetic insulator layer for separating the first ferromagnetic insulator layer from the second ferromagnetic insulator layer;
the acoustic body wave excitation unit comprises a first metal electrode layer, a piezoelectric layer and a second metal electrode layer from bottom to top; the first metal electrode layer and the second metal electrode layer are electrodes capable of applying alternating voltage, the piezoelectric layer is used for generating sound waves under the alternating voltage, the sound waves are transmitted downwards, and magnetic sub-flows are excited in the magnetic sub-junction unit;
when the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have the same magnetic moment direction, the reverse spin Hall voltage of the magnetic sub-junction is high level under the action of acoustic wave excitation, after the magnetic moment of the first ferromagnetic insulator layer is turned over when the topological insulator layer is electrified, the electric current is stopped being electrified to the topological insulator layer, and at the moment, the reverse spin Hall voltage of the magnetic sub-junction is low level under the action of acoustic wave excitation; when the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have opposite magnetic moment directions, the reverse spin Hall voltage of the magneton junction is converted from low level to high level under the action of acoustic wave excitation before and after the current is introduced into the topological insulator layers.
Further preferably, the topological insulator layer is grown on the substrate by means of magnetron sputtering or molecular beam epitaxy, and the electrode arranged above the topological insulator layer is grown by means of magnetron sputtering, electron beam evaporation coating or thermal evaporation coating.
Further preferably, the topological insulator layer is Bi x Sb 1-x 、Bi 2 Se 3 、Sb 2 Te 3 Or Bi 2 Te 3 The method comprises the steps of carrying out a first treatment on the surface of the The electrode is Al, cr, cu, mo or Ag; wherein x is more than 0 and less than 1;
further preferably, the first ferromagnetic insulator layer and the second ferromagnetic insulator layer areY 3 Fe 5 O 12 、CoFe 2 O 4 Or NiFe 2 O 4 The method comprises the steps of carrying out a first treatment on the surface of the The antiferromagnetic insulator layer is NiO, fe 2 O 3 、Cr 2 O 3 、MgO、MnO、FeO、CoO、BiFeO 3 、LaMnO 3 、La 2 CuO 4 、TmFeO 3 、ZnCr 2 O 4 、F 2 、CuCl 2 、FeCl 2 、MnF 2 、FeF 2 Or KNIF 3 The method comprises the steps of carrying out a first treatment on the surface of the The heavy metal layer is V, cr, cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt or Au.
Further preferably, the heavy metal layer is deposited by a magnetron sputtering coating method, a thermal evaporation coating method or an electron beam evaporation coating method, and then is prepared by photoetching and patterning.
Further preferably, the first metal electrode layer and the second metal electrode layer are deposited by a magnetron sputtering film plating method, a thermal evaporation film plating method or an electron beam evaporation film plating method; the piezoelectric layer is deposited by a magnetron sputtering method and is prepared by photoetching and patterning.
Further preferably, the first metal electrode layer and the second metal electrode layer are V, cr Cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt or Au; the piezoelectric layer is PZT, alN or PVDF.
Further preferably, the thickness of the substrate is 500 μm and the thickness of the topological insulator layer is 5nm to 15nm; the thickness of the electrode is 20 nm-50 nm.
Further preferably, the first ferromagnetic insulator layer has a thickness of 20nm to 30nm and the antiferromagnetic insulator layer has a thickness of 5nm to 20nm; the second ferromagnetic insulator layer is 40 nm-50 nm; the thickness of the heavy metal layer is 5 nm-20 nm.
Further preferably, the thickness of the first metal electrode layer is 20nm to 100nm; the thickness of the second metal electrode layer is 20 nm-100 nm; the thickness of the piezoelectric layer is 20 nm-100 nm.
In general, the above technical solutions conceived by the present invention have the following compared with the prior art
The beneficial effects are that:
the invention provides a memory based on a magnetic sub-flow effect, which comprises a topological insulator unit, a magnetic sub-junction unit and an acoustic wave excitation unit, wherein on one hand, the acoustic wave excitation unit comprises a first metal electrode layer, a piezoelectric layer and a second metal electrode layer, alternating voltage is applied to the first metal electrode layer and the second metal electrode layer, the piezoelectric layer generates acoustic waves, the acoustic waves are transmitted downwards, magnetic sub-flows are generated in the magnetic sub-junction unit, the acoustic wave excitation is used as magnetic sub-junction unit power, and the acoustic waves are adopted to excite the magnetic sub-junction so as to effectively solve the heating problem of the memory and reduce the energy loss of the memory; the topological insulator unit comprises a topological insulator layer and an electrode layer; on the other hand, the topological insulator layer is used for overturning the magnetic moment orientation of the first ferromagnetic insulator layer by using the spin orbit moment when current is introduced, so that the magnetic moment overturning efficiency can be greatly improved; the invention provides a novel memory based on a magnetic sub-flow effect, which has high efficiency and low power consumption.
Drawings
FIG. 1 is a schematic diagram of a separation structure of SOT-magnetic sub-junction-BAW layers according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a topology insulator unit employed as provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a magnetic sub-junction unit according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of a first ferromagnetic insulator layer and a second ferromagnetic insulator layer having the same magnetic moment direction in an initial state according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of magnetic moment directions of a first ferromagnetic insulator layer and a second ferromagnetic insulator layer after current is applied to a topological insulator layer 2 according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a acoustic body wave excitation unit provided by an embodiment of the present invention;
FIG. 7 is a schematic diagram of the reverse spin Hall voltages for two ferromagnetic insulator layers with different magnetic moment directions according to an embodiment of the present invention;
the same reference numbers are used throughout the drawings to reference like elements or structures, wherein:
a 1-substrate, a 2-topological insulator layer, a 3-electrode layer, a 4-first ferromagnetic insulator layer; a 5-antiferromagnetic insulator layer; 6-a second ferromagnetic insulator layer; 7-a heavy metal layer; 8-a second metal electrode layer; 9-a piezoelectric layer; 10-a first metal electrode layer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Aiming at the defects or improvement demands of the prior art, the invention aims to provide a memory based on a magnetic sub-flow effect, wherein a topological insulator is utilized to adjust the magnetic moment direction of a first ferromagnetic insulating layer of a magnetic sub-junction unit, and a power source of a sound body wave excitation unit is adopted to realize an efficient and energy-saving memory device.
The topological insulator has a larger Spin Hall Angle, the larger the Spin Hall Angle is, the more polarized self-rotational flows are accumulated at the interface under the same current density, the more magnetic moment can be turned over, meanwhile, phonon-magneton interaction is utilized, and heating and energy loss of the device are further reduced by adopting a method of injecting sound body waves into a magneton junction to excite magneton flow.
The invention provides a memory of SOT-magnetic sub-junction-BAW, comprising: the device comprises a substrate, a topological insulator unit, a magnetic junction unit and an acoustic wave excitation unit, wherein the topological insulator unit, the magnetic junction unit and the acoustic wave excitation unit are positioned on the substrate from bottom to top, acoustic waves are used as a magnetic junction power source, current is introduced into the topological insulator, the magnetic moment orientation of a first ferromagnetic insulator layer of the magnetic junction is adjusted, and the reverse spin Hall effect voltage of the magnetic junction is regulated and controlled so as to achieve the purpose of data storage; the structure of the acoustic body wave excitation magnetic sub-junction based on the magnetic moment regulated by the topological insulator is simply called: SOT-magnetic sub-junction-BAW or SOT-magnetic sub-junction-BAW devices;
further preferably, the substrate includes, but is not limited to, a silicon substrate;
the topological insulator layer grows on the substrate in a magnetron sputtering or molecular beam epitaxy mode, and when current is introduced into the topological insulator layer, the magnetic moment of the first ferromagnetic insulator layer is turned over under the action of spin orbit torque;
further preferred, the topological insulator layer is an alloy compound material, specifically including but not limited to Bi x Sb 1-x 、Bi 2 Se 3 、Sb 2 Te 3 Or Bi 2 Te 3 The method comprises the steps of carrying out a first treatment on the surface of the Wherein x is more than 0 and less than 1;
electrodes are arranged above the topological insulator layer, and the electrodes grow on the topological insulator layer in a magnetron sputtering, electron beam evaporation coating or thermal evaporation coating mode, and specifically include, but are not limited to, al, cr, cu, mo or Ag;
the magnetic sub-junction unit comprises a first ferromagnetic insulator layer, an antiferromagnetic insulator layer, a second ferromagnetic insulator layer and a heavy metal layer which are positioned on the topological insulator layer from bottom to top; the first ferromagnetic insulator layer magnetic moment orientation contained by the magnetic sub-junction cell may be adjusted by an adjacent topological insulator layer while the second ferromagnetic insulator layer maintains a constant magnetic moment orientation to construct the same or opposite magnetic moment orientation of the first ferromagnetic insulator layer and the second ferromagnetic insulator layer;
further preferably, the first ferromagnetic insulator layer and the second ferromagnetic insulator layer each include, but are not limited to, Y 3 Fe 5 O 12 、CoFe 2 O 4 And NiFe 2 O 4 A layer;
further preferred, the antiferromagnetic insulator layer is an oxide-containing material or a halogen-containing compound material, including in particular but not limited to NiO, fe 2 O 3 、Cr 2 O 3 、MgO、MnO、FeO、CoO、BiFeO 3 、LaMnO 3 、La 2 CuO 4 、TmFeO 3 、ZnCr 2 O 4 、F 2 、CuCl 2 、FeCl 2 、MnF 2 、FeF 2 And KNIF 3 ；
Further preferably, the heavy metal layer specifically includes, but is not limited to V, cr, cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt or Au;
the heavy metal layer in the magnetic junction is deposited by means of magnetron sputtering coating, thermal evaporation coating or electron beam evaporation coating and the like, and is patterned by photoetching later and used for testing the reverse spin Hall effect to represent the high and low levels of the magnetic junction;
the acoustic body wave excitation unit comprises a first metal layer, a piezoelectric layer and a second metal layer from bottom to top; applying an alternating voltage to the first metal layer and the second metal layer, so that a sound wave is generated in the piezoelectric layer and is transmitted to the magnetic sub-junction below;
the metal layer in the acoustic wave excitation unit is deposited by a magnetron sputtering coating method, a thermal evaporation coating method or an electron beam evaporation coating method, and the piezoelectric layer is deposited by a magnetron sputtering method and then patterned by photoetching;
further preferably, the metal layer in the acoustic body wave excitation unit specifically includes, but is not limited to, V, cr Cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt, or Au; the piezoelectric layer is a piezoelectric material, including but not limited to PZT, alN, or PVDF in particular.
Examples
As shown in fig. 1, the memory in the present invention includes: a sound wave excitation unit, a magnetic sub-junction unit and a topological insulator unit;
the topological insulator unit comprises a topological insulator layer 2 and an electrode layer 3;
a topological insulator layer 2 located above the lowermost substrate 1; the topological insulator layer 2 is subjected to material design, so that high conductivity can be realized while a large spin hall angle is ensured, and the magnetic moment of the first ferromagnetic insulator layer 4 in the magnetic sub-junction unit is more effectively turned; when a current is applied to the topological insulator layer 2, the current can generate a spin orbit moment for the magnetic moment of the first ferromagnetic insulator layer 4 in the adjacent magnetic sub-junction unit, and under the action of the spin orbit moment, the magnetic moment can be overturned, and the substrate 1 is a silicon substrate; the topological insulator layer 2 is specifically Bi x Sb 1-x In some examples, the topological insulator layer 2 may also be Bi 2 Se 3 、Sb 2 Te 3 Or Bi 2 Te 3 Etc.;
the specific thickness of the substrate 1 is 500 mu m; the specific thickness of the topological insulator layer 2 is 10nm, and in some examples, the thickness of the topological insulator layer can be 5 nm-15 nm;
the specific thickness of the electrode 3 is 30nm, and in some examples, the thickness of the topological insulator layer can also be 20 nm-50 nm;
the magnetic sub-junction unit comprises a first ferromagnetic insulator layer 4, an antiferromagnetic insulator layer 5, a second ferromagnetic insulator layer 6 and a heavy metal layer 7; the heavy metal layer 7 at the uppermost layer can express the magnetic sub-current transmitted in the second ferromagnetic insulator layer 6 in the form of reverse spin Hall effect voltage, the magnetic moment orientation of the first ferromagnetic insulator layer 4 is regulated through the topological insulator layer 2, and the whole device can be regulated in the states of high and low reverse spin Hall voltages;
the first ferromagnetic insulator layer 4 and the second ferromagnetic insulator layer 6 may be Y 3 Fe 5 O 12 、CoFe 2 O 4 And NiFe 2 O 4 The method comprises the steps of carrying out a first treatment on the surface of the The antiferromagnetic insulator layer 5 is an oxygen-containing compound material or a halogen compound material, including but not limited to NiO, fe 2 O 3 、Cr 2 O 3 、MgO、MnO、FeO、CoO、BiFeO 3 、LaMnO 3 、La 2 CuO 4 、TmFeO 3 、ZnCr 2 O 4 、F 2 、CuCl 2 、FeCl 2 、MnF 2 、FeF 2 And KNIF 3 ；
The first ferromagnetic insulator layer 4 is specifically 20nm thick, and in some examples, the first ferromagnetic insulator layer 4 may be 20nm to 30nm thick and the antiferromagnetic insulator layer 5 10nm thick. In some examples, the antiferromagnetic insulator layer thickness may also be 5nm to 20nm; the specific thickness of the second ferromagnetic insulator layer 6 is 40nm; in some examples, the second ferromagnetic insulator layer 6 may also be 40nm to 50nm thick; each layer in the magnetic sub-junction unit is sequentially deposited by a magnetron sputtering method; in some examples, the layers of the magnetic sub-junction may also be deposited by Pulsed Laser Deposition (PLD), molecular Beam Epitaxy (MBE), or the like;
the specific thickness of the heavy metal layer 7 is 10nm; in some examples, the heavy metal layer 7 may also be 5nm to 20nm thick; the heavy metal layer 7 is deposited on the surface of the second ferromagnetic insulator layer 6 through magnetron sputtering; in some examples, heavy metal layer 7 may also be deposited by electron beam evaporation (E-beam), thermal evaporation, or the like;
the second metal electrode layer 8 has a specific thickness of 50nm. In some examples, the second metal electrode layer 8 may also be 20nm to 100nm; the second metal electrode layer 8 is deposited on the surface of the second ferromagnetic insulator layer 7 by a magnetron sputtering method; in some examples, the second metal electrode layer 8 may also be deposited by electron beam evaporation (E-beam) and thermal evaporation, among other methods;
the piezoelectric layer 9 has a specific thickness of 50nm, and in some examples, the thickness of the piezoelectric layer may be 20nm to 100nm; the piezoelectric layer 9 material is deposited on the surface of the second metal electrode layer 8 by a magnetron sputtering method;
the first metal electrode layer 10 has a specific thickness of 50nm, and in some examples, the thickness of the first metal electrode layer 10 may be 20nm to 100nm; the first metal electrode layer 10 is deposited on the surface of the piezoelectric layer 9 by magnetron sputtering. In some examples, the first metal electrode layer 10 may also be deposited by electron beam evaporation (E-beam) and thermal evaporation, among other methods;
the preparation method of the SOT-magnetic sub-junction-BAW memory provided by the invention comprises the following steps:
preparing a layer of Bi on a silicon substrate 1 by magnetron sputtering x Sb 1-x The corresponding element proportion is controlled by controlling the difference of the power of the sputtering sources of the Bi target and the Sb target;
sequentially preparing a first ferromagnetic insulator layer, an antiferromagnetic insulator layer, a second ferromagnetic insulator layer and a heavy metal layer on the grown topological insulator layer by adopting a magnetron sputtering method;
and sequentially preparing a second metal electrode layer, a piezoelectric layer and a first metal electrode layer on the second ferromagnetic insulating layer by adopting a magnetron sputtering method.
FIG. 2 shows a topological insulator unit, wherein topological insulator layer materials Bi with different thicknesses are sequentially grown on a silicon substrate by a magnetron sputtering method x Sb 1-x And an electrode layer 3;
FIG. 3 is a magnetic sub-junction cell in which the magnitude of the magnetic sub-current is measured by the heavy metal layer 7 on the second ferromagnetic insulator layer 6;
the principle of the magnetic sub-junction effect is shown in fig. 1, and the magnetic sub-junction effect comprises a sound wave excitation unit, a magnetic sub-junction unit, a topological insulator unit and a substrate from top to bottom in sequence; the acoustic wave excitation unit comprises a first metal electrode layer, a piezoelectric layer and a second metal electrode layer; the magnetic sub-junction unit comprises a heavy metal layer, a first ferromagnetic insulator layer, an antiferromagnetic insulator layer and a second ferromagnetic insulator layer; the topological insulator unit comprises a topological insulator layer and a substrate; assuming that the first ferromagnetic insulator layer and the second ferromagnetic insulator layer in the magnetic sub-junction have the same magnetic moment direction in the initial state, as shown in fig. 4, after a current is applied to the topological insulator layer 2, the magnetic moment in the first ferromagnetic insulator layer 4 will be flipped by the spin orbit torque, and inverted to the second ferromagnetic insulator layer 6, as shown in fig. 5. If acoustic body wave excitation is applied, the reverse spin hall effect voltage will also be shifted from high to low;
the structure of the acoustic body wave excitation unit is shown in fig. 6, and an alternating voltage is applied through the first metal electrode layer 10 and the second metal electrode layer 8, so that the piezoelectric layer 9 generates corresponding acoustic body waves;
the reverse spin hall voltages of the SOT-magneton-BAW under the condition that the magnetic moment directions of the two ferromagnetic insulator layers are different are as follows: when the magnetic moment directions in the two ferromagnetic insulator layers are the same, as shown in parallel lines in fig. 7; presenting a high level state; when the magnetic moment directions in the two ferromagnetic insulator layers are opposite, a low level state is presented;
in summary, the embodiment can form an SOT-magnetic junction-BAW structure, adjust the magnetic moment orientation of the magnetic junction through a topological insulator, and use acoustic wave excitation as a magnetic junction power source to form a high-efficiency low-power consumption memory device prototype with practical application value;
in addition to the specific materials and structures of the magnetic sub-junction units in the above embodiments, other materials and magnetic sub-junction structures having similar effects may be used.
It will be readily appreciated by those skilled in the art that the foregoing description is merely a preferred embodiment of the invention and is not intended to limit the invention, but any modifications, equivalents, improvements or alternatives falling within the spirit and principles of the invention are intended to be included within the scope of the invention.

Claims (10)

1. A memory based on the magnetic substream effect, comprising: a topological insulator unit, a magnetic sub-junction unit and an acoustic wave excitation unit; the topological insulator unit, the magnetic sub-junction unit and the acoustic wave excitation unit are sequentially positioned on the substrate from bottom to top;
the topological insulator unit comprises a topological insulator layer and an electrode layer; the electrode layer is an electrode which is used for leading in current to the topological insulator layer; the topological insulator layer is used for overturning an adjacent ferromagnetic layer by using spin orbit moment when current is introduced;
the magnetic sub-junction unit comprises a first ferromagnetic insulator layer, an antiferromagnetic insulator layer, a second ferromagnetic insulator layer and a heavy metal layer from bottom to top; the first ferromagnetic insulator layer is used for changing the magnetic moment orientation under the action of spin orbit moment generated by the topological insulator layer; the magnetic moment of the second ferromagnetic insulator layer remains unchanged; the heavy metal layer is used for representing the magnetic sub-current transmitted in the second ferromagnetic insulator layer in the form of the reverse spin Hall effect voltage of a magnetic sub-junction; the antiferromagnetic insulator layer is used for separating the first ferromagnetic insulator layer and the second ferromagnetic insulator layer;
the acoustic body wave excitation unit comprises a first metal electrode layer, a piezoelectric layer and a second metal electrode layer from bottom to top; the first metal electrode layer and the second metal electrode layer are electrodes for applying alternating voltage; the piezoelectric layer is used for generating acoustic body waves under the action of alternating voltage, the acoustic body waves are transmitted downwards, and magnetic sub-flows are generated in the magnetic sub-junction units;
when the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have the same magnetic moment direction, the reverse spin Hall voltage of the magnetic junction is high level under the action of acoustic wave excitation, current is introduced into the topological insulator layer, after the magnetic moment of the first ferromagnetic insulator layer is overturned, the current is stopped being introduced into the topological insulator layer, and the reverse spin Hall voltage of the magnetic junction is low level under the action of acoustic wave excitation; when the first ferromagnetic insulator layer and the second ferromagnetic insulator layer have opposite magnetic moment directions, the reverse spin Hall voltage of the magneton junction is converted from low level to high level under the action of acoustic wave excitation before and after the current is introduced into the topological insulator layers.
2. The memory of claim 1, wherein the topological insulator layer is grown on the substrate by magnetron sputtering or molecular beam epitaxy, and the electrode disposed over the topological insulator layer is grown by magnetron sputtering, electron beam evaporation plating, or thermal evaporation plating.
3. The memory of claim 2, wherein the topological insulator layer is Bi x Sb 1-x 、Bi 2 Se 3 、Sb 2 Te 3 Or Bi 2 Te 3 The method comprises the steps of carrying out a first treatment on the surface of the The electrode is Al, cr, cu, mo or Ag; wherein x is more than 0 and less than 1.
4. The memory of claim 1, wherein the first ferromagnetic insulator and the second ferromagnetic insulator layer are Y 3 Fe 5 O 12 、CoFe 2 O 4 Or NiFe 2 O 4 The method comprises the steps of carrying out a first treatment on the surface of the The antiferromagnetic insulator layer is NiO, fe 2 O 3 、Cr 2 O 3 、MgO、MnO、FeO、CoO、BiFeO 3 、LaMnO 3 、La 2 CuO 4 、TmFeO 3 、ZnCr 2 O 4 、F 2 、CuCl 2 、FeCl 2 、MnF 2 、FeF 2 Or KNIF 3 The method comprises the steps of carrying out a first treatment on the surface of the The heavy metal layer is V, cr, cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt or Au.
5. The memory according to claim 4, wherein the heavy metal layer is deposited by a magnetron sputtering film plating method, a thermal evaporation film plating method or an electron beam evaporation film plating method, and is prepared by patterning by photolithography.
6. The memory according to claim 1, wherein the first metal electrode layer and the second metal electrode layer are prepared by deposition by a magnetron sputtering plating method, a thermal evaporation plating method, or an electron beam evaporation plating method; the piezoelectric layer is deposited by a magnetron sputtering method and is prepared by photoetching and patterning.
7. The memory of claim 6, wherein the first metal electrode layer and the second metal electrode layer are V, cr Cu, nb, mo, ru, rh, pd, ag, hf, ta, W, re, ir, pt, or Au; the piezoelectric layer is PZT, alN or PVDF.
8. The memory of claim 2, wherein the substrate has a thickness of 500 μm and the topological insulator layer has a thickness of 5nm to 15nm; the thickness of the electrode is 20 nm-50 nm.
9. The memory of claim 4 or 5, wherein the first ferromagnetic insulator layer is 20nm to 30nm thick and the antiferromagnetic insulator layer is 5nm to 20nm thick; the second ferromagnetic insulator layer is 40 nm-50 nm; the thickness of the heavy metal layer is 5 nm-20 nm.
10. The memory according to claim 6 or 7, wherein a thickness of the first metal electrode layer is 20nm to 100nm; the thickness of the second metal electrode layer is 20 nm-100 nm; the thickness of the piezoelectric layer is 20 nm-100 nm.
CN202310436009.6A 2023-04-21 2023-04-21 Memory based on magnetic substream effect Pending CN116507131A (en)

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