CN116505286A - Binary channels wave-absorbing device based on plasma combined material - Google Patents
Binary channels wave-absorbing device based on plasma combined material Download PDFInfo
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- CN116505286A CN116505286A CN202310698127.4A CN202310698127A CN116505286A CN 116505286 A CN116505286 A CN 116505286A CN 202310698127 A CN202310698127 A CN 202310698127A CN 116505286 A CN116505286 A CN 116505286A
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q17/00—Devices for absorbing waves radiated from an antenna; Combinations of such devices with active antenna elements or systems
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- Laminated Bodies (AREA)
Abstract
The invention discloses a double-channel wave absorbing device based on a plasma composite material, which relates to the field of plasma application, and comprises: the plasma processing device comprises a metal substrate, a first wave-absorbing material layer, a plasma array, a second wave-absorbing material layer, a first isolation protection layer and a second isolation protection layer; the first wave-absorbing material layer is arranged on the upper surface of the metal substrate; a plasma array is arranged above the first wave-absorbing material layer; a second wave-absorbing material layer is arranged above the plasma array; the first isolation protection layer and the second isolation protection layer are arranged on two sides of the plasma array; the two wave-absorbing material layers and the two isolation protective layers form a cavity structure; the plasma array is arranged in the cavity structure, so that the plasma array is positioned in the cavity formed by the wave-absorbing material layers, the generation and the maintenance of the electron density of the plasma are facilitated, the wave-absorbing effect and the wave-absorbing performance are improved, in addition, the composite double-channel wave-absorbing structure is formed by combining the plasma and the wave-absorbing material layers, and the wave-absorbing performance is greatly improved.
Description
Technical Field
The invention relates to the technical field of application of low-temperature plasmas, in particular to a dual-channel wave absorbing device based on a plasma composite material.
Background
The wide use of modern military radars makes them an important detection tool. Radar stealth naturally becomes an important stealth technology, which is always a research hotspot in the field of space exploration, and the plasma stealth technology gradually goes from a laboratory to practical use, and expands from the application in the aviation field to the stealth of a navigation ship and the stealth of ground weaponry.
How to achieve low observability of targets in increasingly complex electromagnetic environments is a problem that must be considered in designing various equipment systems. The key to radar stealth is mainly to reduce the radar cross section of a target to a level that cannot be detected by a radar receiver, and the radar cross section is generally reduced by loading radar absorbing materials on the surface of the target to reduce detection echoes or to modify the geometric shape of an object, so that scattered waves are redirected away from the backscattering direction.
The target shaping design is a challenging project for realizing radar stealth, the design cost is extremely high, the target shaping design is often only suitable for a small part of important equipment, and the appearance design cannot well exert the stealth effect at a lower frequency. Loading wave-absorbing material on the target surface is a common method for reducing radar cross section. Traditional ferrite and carbon-based radar wave absorbing materials can only effectively absorb electromagnetic waves in specific frequency bands and angles, and the radar wave absorbing material coating is very thick and heavy, and is not easy to absorb microwaves in the X frequency band, so that the thin-layer radar wave absorbing material is not easy to realize reduction of radar scattering cross section in the wide frequency band, and plasma can absorb electromagnetic waves in a wider frequency range and is easy to control, and plasma stealth is used for reducing electromagnetic wave reflection of targets.
A great deal of research on plasma stealth is conducted around an open-type flat plasma cover on a metal plate, and the radar stealth effect is not good by using the open-type flat plasma at present because the plasma has a short life in an open environment and the plasma electron density of ideal distribution is difficult to generate and maintain.
Disclosure of Invention
The invention aims to provide a dual-channel wave-absorbing device based on a plasma composite material, which is characterized in that wave-absorbing material layers are arranged on the upper side and the lower side of a plasma array, and isolation protective layers are arranged on two opposite sides, so that the plasma array is positioned in a cavity formed by the wave-absorbing material layers, and the generation and the maintenance of plasma electron density are facilitated, thereby improving the wave-absorbing effect and the wave-absorbing performance.
In order to achieve the above object, the present invention provides the following solutions:
a dual channel wave absorbing device based on a plasma composite material, the device comprising: the plasma processing device comprises a metal substrate, a first wave-absorbing material layer, a plasma array, a second wave-absorbing material layer, a first isolation protection layer and a second isolation protection layer;
the first wave-absorbing material layer is arranged on the upper surface of the metal substrate; a plasma array is arranged above the first wave-absorbing material layer; a second wave-absorbing material layer is arranged above the plasma array;
the first isolation protection layer and the second isolation protection layer are arranged on two sides of the plasma array;
the first wave-absorbing material layer, the second wave-absorbing material layer, the first isolation protection layer and the second isolation protection layer form a cavity structure; the plasma array is disposed in the cavity structure.
Optionally, the first wave absorbing material layer includes a third isolation protection layer and a first ITO layer;
the third isolation protection layer is arranged on the upper surface of the metal substrate;
the first ITO layer is arranged on the upper surface of the third isolation protection layer.
Optionally, the second wave-absorbing material layer includes a fourth isolation protection layer and a second ITO layer;
the fourth isolation protection layer is arranged above the plasma array;
the second ITO layer is arranged on the lower surface of the fourth isolation protection layer.
Optionally, the first isolation protection layer, the second isolation protection layer, the third isolation protection layer and the fourth isolation protection layer are FOAM layers.
Optionally, the opening and closing functions of each plasma unit in the plasma array are independently set.
Optionally, the plasma frequency of each of the plasma units is adjustable.
Alternatively, the plasma cells of different plasma frequencies are alternately distributed.
Optionally, the plasma array comprises a plurality of groups of gas discharge tubes with black tubular closed cavities; the gas discharge tubes are arranged in parallel.
Optionally, the third insulating protection layer and the fourth insulating protection layer are parallel to the axis of the gas discharge tube.
Optionally, the gas discharge tube is filled with a low-pressure mixed gas of inert gas and mercury; the pressure in the gas discharge tube is 500-1500Pa; the diameter of the gas discharge tube was 15mm.
According to the specific embodiment provided by the invention, the invention discloses the following technical effects:
the invention provides a double-channel wave-absorbing device based on a plasma composite material, which is characterized in that wave-absorbing material layers are arranged on the upper side and the lower side of a plasma array, and isolation protective layers are arranged on two opposite sides, so that the plasma array is positioned in a cavity formed by the wave-absorbing material layers, and the generation and the maintenance of plasma electron density are facilitated, thereby improving the wave-absorbing effect and the wave-absorbing performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings that are needed in the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a block diagram of a dual-channel wave absorbing device based on a plasma composite material according to an embodiment of the present invention;
FIG. 2 is a graph showing the distribution of plasma in three modes according to an embodiment of the present invention;
fig. 3 is a graph showing the comparison of the absorption rates of three different distribution modes of the plasma and radar absorbing materials according to the embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention aims to provide a dual-channel wave-absorbing device based on a plasma composite material, which is characterized in that wave-absorbing material layers are arranged on the upper side and the lower side of a plasma array, and isolation protective layers are arranged on two opposite sides, so that the plasma array is positioned in a cavity formed by the wave-absorbing material layers, and the generation and the maintenance of plasma electron density are facilitated, thereby improving the wave-absorbing effect and the wave-absorbing performance.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Examples
As shown in fig. 1, the present embodiment provides a dual-channel wave absorbing device based on a plasma composite material, which aims to widen the microwave stealth of a radar wave absorbing material in an X frequency band, and realize tunable electromagnetic wave absorption at the same time, and generally, it is considered that when the frequency of electromagnetic waves is greater than the plasma frequency, electromagnetic waves cannot propagate in certain frequency bands of the plasma, namely, photonic band gaps; whereas when the electromagnetic wave frequency is lower than the plasma frequency, the electromagnetic wave cannot propagate inside the plasma, called the cut-off frequency. In general, wp/2pi (Hz) is regarded as the cutoff frequency of electromagnetic wave propagation in the plasma, and electromagnetic waves below this frequency will be totally reflected and cannot enter the plasma, because the plasma density in the gas discharge tube is in radial gaussian distribution, i.e. the plasma frequency at the tube wall is lower than the plasma frequency at the center of the tube, when electromagnetic waves are coupled into a large-range plasma array, electromagnetic diffraction and other phenomena will not occur, and referring to fig. 2, the thin plasmas arranged in Mode2 and Mode3 are relatively uniformly distributed and can only transmit electromagnetic waves in a specific frequency range, so that the thin plasmas are unevenly distributed and arranged, so that more electromagnetic waves can be coupled into a plasma layer, thereby increasing the possibility of multiple scattering of electromagnetic waves, dissipating electromagnetic energy and improving the electromagnetic wave absorptivity.
When the electromagnetic wave is normally incident to the plasma absorber, the low-frequency electromagnetic wave propagates in the low-electron density plasma, and as shown in fig. 2, the plasma unit with the electron density Ne1 and the low-frequency electromagnetic wave have strong coupling effect, while as the frequency of the electromagnetic wave increases, more electromagnetic energy can be coupled into the high-electron density plasma, and the coupling effect of the high-frequency electromagnetic wave and the plasma with the electron density Ne2 is stronger. Whereas electromagnetic waves in the X-KU band can be fully coupled into the plasma layer for dissipation and absorption by the RAM. The electromagnetic wave reacts with the RAM, and the radar absorbing material on the metal surface has an induced electric field, which shows that the radar absorbing material has good absorption performance on high-frequency electromagnetic waves, the electromagnetic energy is concentrated in pores between plasma units along with the increase of frequency, and the electromagnetic waves are scattered multiple times between a gas discharge tube and the radar absorbing material and are dissipated and absorbed.
Based on the theory, the novel composite wave-absorbing material can be formed by alternately setting the plasma frequency on the radar wave-absorbing material, and the novel composite wave-absorbing material has extremely excellent wave-absorbing performance, and specifically comprises the following components: the plasma processing device comprises a metal substrate, a first wave-absorbing material layer, a plasma array, a second wave-absorbing material layer, a first isolation protection layer and a second isolation protection layer.
The first wave-absorbing material layer is arranged on the upper surface of the metal substrate; a plasma array is arranged above the first wave-absorbing material layer; and a second wave-absorbing material layer is arranged above the plasma array.
In this embodiment, the metal substrate may be selected to be a coder substrate, i.e., a coder shown in fig. 1. The bottom of the metal substrate is connected to the surface of the casing of the electromagnetic protection equipment. Electromagnetic protection equipment is proposed to include weaponry or important radar antenna assemblies that are required to be stealth on a sea, land, and air basis. The radar is difficult to steal through the appearance, the protruding part cannot well realize radar steal, the traditional radar wave absorbing material is coated on the radar antenna and cannot realize broadband absorption, the plasma and wave absorbing material can well realize the steal part which is difficult to realize on a flying target, such as a landing gear part and an aircraft engine part, and the steal mode of the invention can also be adopted.
Wherein the first wave-absorbing material Layer comprises a third isolation protective Layer (corresponding to Foam Layer3 in fig. 1) and a first ITO Layer (corresponding to ITOLayer1 in fig. 1). Namely, the first wave-absorbing material layer is formed by an ultrathin ITO layer and an FOAM layer. The third isolation protection layer is used as a dielectric substrate of the wave absorbing device and the metal substrate.
The third isolation protection layer is arranged on the upper surface of the metal substrate.
The first ITO layer is arranged on the upper surface of the third isolation protection layer.
The first wave-absorbing material layer is used as a high-frequency electromagnetic absorbing material base and plays a role in absorbing waves of the base.
Wherein the second wave-absorbing material Layer comprises a fourth isolation protective Layer (corresponding to Foam Layer4 in fig. 1) and a second ITO Layer (corresponding to ITOLayer2 in fig. 1); namely, the second wave-absorbing material layer is formed by an ultrathin ITO layer and an FOAM layer, and plays a basic wave-absorbing role. The fourth isolation protection layer serves as a substrate of the second ITO layer.
The fourth isolation protection layer is disposed above the plasma array (corresponding to Plasma tunabletube in fig. 1).
The second ITO layer is arranged on the lower surface of the fourth isolation protection layer.
The first isolation protection layer, the second isolation protection layer, the third isolation protection layer and the fourth isolation protection layer are Foam layers.
The first isolation protection layer and the second isolation protection layer are arranged on two sides of the plasma array. As shown in fig. 1, the third and fourth insulating protective layers are parallel to the axis of the gas discharge tube constituting the plasma array. The first isolation protection layer and the second isolation protection layer serve as basic isolation protection of the wave absorbing device.
The first wave-absorbing material layer, the second wave-absorbing material layer, the first isolation protection layer and the second isolation protection layer form a cavity structure; the plasma array is disposed in the cavity structure.
For the plasma array, the opening and closing functions of each plasma unit in the plasma array are independently set.
The plasma frequency of each plasma unit is adjustable. And the plasma units with different plasma frequencies are alternately distributed, and the frequencies of the alternately distributed plasmas in the gas discharge tube are respectively 2.36 multiplied by 10 10 rad/s and 4.15X10 10 rad/s. Therefore, the plasma array forms a combined plasma layer after excitation; the plasma frequency in the plasma layer shows high-low alternating distribution.
Each plasma unit in the plasma array can be arbitrarily opened and closed, and the adjustability of the wave-absorbing frequency band is realized by regulating and controlling the parameters of the plasma; the on-off of the plasma unit is controlled to change the spatial distribution of the plasma, so as to realize the adjustment of the attenuation band gap and the attenuation amplitude.
The plasma array can control the on-off of the plasma and the related working properties by setting the related plasma frequency and the related collision frequency.
In order to realize that the absorptivity of the wave absorber to the microwaves of 3 to 7GHz and 12 to 16GHz can reach more than 90 percent, channels are reserved on the frequency bands of 8 to 12GHz and 16 to 20GHz for equipment communication, large angles and tunable electromagnetic wave absorption are realized in the frequency bands, and simultaneously, each plasma unit in the plasma array can be randomly opened and closed by adjusting different absorption frequency bands according to different scene requirements, and the adjustability of the wave absorption frequency bands is realized by adjusting parameters of plasmas; the on-off of the plasma unit is controlled to change the spatial distribution of the plasma, so as to realize the adjustment of the attenuation band gap and the attenuation amplitude.
In addition, the existing open type plasma can emit visible light, and is easy to observe by a photoelectric detection system. Thus, such an open plasma cannot be used directly for practical stealth applications. For this reason, the closed-cavity plasma is introduced into stealth technology, and is usually generated by using an inductive coupling coil or a discharge electrode, so that the closed-cavity plasma can maintain stable electron density and controllable plasma distribution, and the plasma generated by the inductive coupling coil has the problems of uneven distribution, large device volume and the like, and is not suitable for stealth application with large-area plasma. Thus, in the present invention, the plasma array is a plasma generated by a tubular closed low pressure plasma generator; the tubular closed low-voltage plasma generator is formed by arranging a plurality of groups of gas discharge tubes with black tubular closed cavities. That is, the plasma array comprises a plurality of groups of gas discharge tubes with black tubular closed cavities; the gas discharge tubes are arranged in parallel. I.e. each plasma cell is a gas discharge tube. The gas discharge tube is filled with low-pressure mixed gas of inert gas and mercury; the pressure in the gas discharge tube is 500-1500Pa; the diameter of the gas discharge tube was 15mm. The plasma excitation module is controlled by a ballast. And will limit the frequency of the plasma.
The plasma cylinder array is assumed to be infinitely distributed over a perfect electrical conductor (metal plate) covered with conventional radar absorbing material. By adjusting the rectifier voltage, plasmas with different electron densities can be obtained. In order to analyze the effect of the spatial distribution of the plasma on radar absorption, two different arrangements of plasma frequencies were tested in three different modes (single low electron density plasma, single high electron density plasma, alternating distribution of two density plasmas) respectively, as shown in FIG. 2, (Ne 1 and Ne2 are used to represent the corresponding plasma electron densities), and the electron collision frequency here was taken as a fixed value of 1.256 ×10 10 rad/s, the plasma frequency in the gas discharge tube is 4.15X10 according to the simulation results of FIG. 2 10 rad/s (Ne 2 corresponding to high electron density plasma), 2.36×10 10 rad/s (Ne 1 corresponds to a low electron density plasma), and adjusting the voltage can change the electron density of the plasma, and thus the plasma frequency.
Compared with the radar absorbing material of the plasma stealth device with three different distribution modes, when the plasma frequencies of the plasma absorber are distributed alternately in height as shown in the reference figure 3, the plasma stealth device can effectively absorb electromagnetic waves in a low frequency band, and the passband is clear and visible. And when the plasma frequency changes, the strong resonance point of the passband also changes, thereby achieving the effect that the tunable resonance passband is used for equipment communication.
Preparation process of ITO film with specific resistance (ITO film resistivity is 150-300 Ohm/m) 2 ：
The ITO nano-particles are prepared by taking In (NO 3) 3.5H2O and SnCl4.5H2O as electrodeless reactants, citric acid as a complexing agent, ethylene glycol as a polymerizer, and double distilled water and absolute ethyl alcohol as dispersing solvents.
(1) The ITO nanometer powder is prepared by PC sol-gel method.
1. In (NO 3) 3.5H2O and SnCl4.5H2O were dissolved In the same weight ratio of distilled water and absolute ethanol.
2. Citric acid and ethylene glycol were added and stirred at 40℃for 40min.
3. The stirred solution was refluxed at 120 ℃ for 3 hours.
4. The sol obtained was heated slowly in an open oil bath for 18 hours, the temperature of the oil bath being around 90 ℃.
5. The wet gel will be obtained by direct heating at 140℃for 4 hours.
6. And then dried by heating at 200 ℃ for 30 min.
7. The xerogel obtained was withdrawn in a natural air cabin at 350 ℃ for one hour and then allowed to cool slowly to room temperature. Thereby obtaining the desired ITO nanoparticles.
(2) And (3) performing film coating by utilizing magnetron sputtering and utilizing a cathode sputtering principle. SiO2 is used as a substrate, and film particles are derived from cathode sputtering action of argon ions on a cathode ITO target in glow discharge. And after sputtering target atoms by argon ions, bombarding the ITO film with the resistance value to be improved by adopting ion oxygen, so that the ion oxygen and the ITO film with the resistance value to be improved undergo secondary reaction, thus obtaining the ITO film with the preset resistance value, and further depositing the ITO film on the surface of a substrate to form the required ITO film shape.
In the embodiment, a tubular closed low-voltage plasma generator is utilized to generate plasma, and a FOAM layer substrate and an ITO film material jointly form a double-channel wave absorbing device (electromagnetic stealth device); the tubular closed cavity is made of a black glass tube, and can effectively prevent visible light generated by plasma from diffusing outside the cavity; the novel composite wave-absorbing material formed by combining the plasmas and the wave-absorbing material has extremely excellent wave-absorbing performance, can realize the function of absorbing radar waves on a wide frequency band, can achieve more than 90% of absorption rate of the wave-absorbing body to microwaves of 2.2-4.2GHz, 9.8-12.3GHz and 18-20GHz when the density of the plasmas is in a mode of alternately distributing the high and low frequency, and leaves a channel with lower double absorption rate beside a forbidden band for equipment communication.
The principles and embodiments of the present invention have been described herein with reference to specific examples, the description of which is intended only to assist in understanding the methods of the present invention and the core ideas thereof; also, it is within the scope of the present invention to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the invention.
Claims (10)
1. A dual channel wave absorbing device based on a plasma composite material, the device comprising: the plasma processing device comprises a metal substrate, a first wave-absorbing material layer, a plasma array, a second wave-absorbing material layer, a first isolation protection layer and a second isolation protection layer;
the first wave-absorbing material layer is arranged on the upper surface of the metal substrate; the plasma array is arranged above the first wave-absorbing material layer; the second wave-absorbing material layer is arranged above the plasma array;
the first isolation protection layer and the second isolation protection layer are arranged on two sides of the plasma array;
the first wave-absorbing material layer, the second wave-absorbing material layer, the first isolation protection layer and the second isolation protection layer form a cavity structure; the plasma array is disposed in the cavity structure.
2. The apparatus of claim 1, wherein the first layer of wave-absorbing material comprises a third insulating protective layer and a first layer of ITO;
the third isolation protection layer is arranged on the upper surface of the metal substrate;
the first ITO layer is arranged on the upper surface of the third isolation protection layer.
3. The apparatus of claim 2, wherein the second layer of wave-absorbing material comprises a fourth insulating protective layer and a second layer of ITO;
the fourth isolation protection layer is arranged above the plasma array;
the second ITO layer is arranged on the lower surface of the fourth isolation protection layer.
4. The apparatus of claim 3, wherein the first, second, third, and fourth isolation protective layers are FOAM layers.
5. The apparatus of claim 1, wherein the on-off function of each plasma cell in the plasma array is independently set.
6. The apparatus of claim 5, wherein a plasma frequency of each of the plasma cells is adjustable.
7. The apparatus of claim 8, wherein the plasma cells of different plasma frequencies are alternately distributed.
8. The apparatus of claim 1 or 7, wherein the plasma array comprises a plurality of groups of gas discharge tubes with black tubular closed cavities; the gas discharge tubes are arranged in parallel.
9. The apparatus of claim 8, wherein the third and fourth insulating protective layers are parallel to an axis of the gas discharge tube.
10. The apparatus of claim 9, wherein the gas discharge tube is filled with a low pressure mixed gas of an inert gas and mercury; the pressure in the gas discharge tube is 500-1500Pa; the diameter of the gas discharge tube was 15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310698127.4A CN116505286A (en) | 2023-06-13 | 2023-06-13 | Binary channels wave-absorbing device based on plasma combined material |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310698127.4A CN116505286A (en) | 2023-06-13 | 2023-06-13 | Binary channels wave-absorbing device based on plasma combined material |
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| CN116505286A true CN116505286A (en) | 2023-07-28 |
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|---|---|---|---|
| CN202310698127.4A Pending CN116505286A (en) | 2023-06-13 | 2023-06-13 | Binary channels wave-absorbing device based on plasma combined material |
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| Country | Link |
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- 2023-06-13 CN CN202310698127.4A patent/CN116505286A/en active Pending
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