CN116504822B - Reverse-conduction IGBT based on trench gate - Google Patents
Reverse-conduction IGBT based on trench gate Download PDFInfo
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- CN116504822B CN116504822B CN202310616682.8A CN202310616682A CN116504822B CN 116504822 B CN116504822 B CN 116504822B CN 202310616682 A CN202310616682 A CN 202310616682A CN 116504822 B CN116504822 B CN 116504822B
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- 239000000463 material Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 239000002184 metal Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 18
- 239000004065 semiconductor Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- -1 aluminum-silicon-copper Chemical compound 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000011084 recovery Methods 0.000 abstract description 8
- 238000000605 extraction Methods 0.000 abstract description 4
- 230000009471 action Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
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- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 229910052698 phosphorus Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a reverse-conduction IGBT based on a trench gate, when the IGBT is turned off, a device bears a negative gate voltage diode to start to conduct, and a heavily doped P-type doped region is communicated with a P-type doped base region, which is equivalent to increasing the total doping concentration of the diode anode and improving the anti-surge capacity; in addition, when the IGBT is conducted, the device bears positive grid voltage, the channel of the diode region is not opened, the heavily doped P-type doped region is isolated, the doping concentration of the anode of the diode is not influenced, and the lower hole extraction speed is kept to ensure that the reverse recovery process has better softness; moreover, the virtual trench gate of the diode working area is used as a control gate for diode conduction when the diode works, and is used as a virtual gate of the IGBT when the IGBT works, so that the surface utilization rate of the device is effectively improved; finally, the virtual trench gate and the trench gate are controlled by the same gate, and can be controlled by only one gate driver, so that the control complexity of the device is effectively reduced.
Description
Technical Field
The invention relates to the technical field of power semiconductor devices, in particular to a reverse-conduction insulated gate bipolar transistor (reverse-conduction IGBT) based on a trench gate.
Background
Insulated Gate Bipolar Transistors (IGBTs) are extremely important in medium and high power electronic systems, traditional IGBTs cannot be conducted reversely, and an IGBT module is formed by being connected with a diode in anti-parallel, so that the cost and the volume of the system are greatly increased. Therefore, the reverse-conduction insulated gate bipolar transistor, namely the reverse-conduction IGBT, is provided, wherein the IGBT and the diode are integrated on the same chip, and has the advantages of small size, high power density, low cost, high reliability and the like.
The reverse recovery phase of the diode tends to be the weakest loop throughout the operating conditions of the diode. The reverse recovery characteristic of the diode is usually required to be soft recovery, voltage oscillation generated by the snappy phenomenon is avoided to damage the device, and in order to ensure soft recovery, the anode emission efficiency cannot be too high, which requires that the doping concentration of the anode of the diode is low. But a lower anode doping concentration will result in a weaker surge current resistance, affecting its reliability. The diode must therefore compromise its softness and resistance to inrush currents.
The IGBT will constantly switch on and off states throughout the operating conditions, and therefore the switching characteristics of the IGBT are important. The design of the trench gate structure directly influences the switching characteristics of the device, and in order to meet the design requirements, a part of virtual gates for adjusting the capacitance characteristics of the gate are required to be designed besides the real gates for controlling the opening of the channel. However, in the reverse-conduction type IGBT device, the IGBT and the diode share the cell region of the chip, so the trench gate structure design is limited by the diode operating region.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a reverse-conducting IGBT based on a trench gate, which is used for solving the problems that in the prior art, softness and anti-surge current capability of a diode in a cell area of the reverse-conducting IGBT cannot be effectively compromised, and a surface utilization rate of the cell area is low.
To achieve the above and other related objects, the present invention provides a trench gate-based reverse-conducting IGBT, including a cell region, wherein the cell region includes from top to bottom: the semiconductor device comprises an emitter metal, a first insulating layer, a first conductive type doped base region, a second conductive type doped drift region, a second conductive type doped buffer layer, a first conductive type doped collector region, a second conductive type doped cathode region and a collector metal, wherein the first conductive type doped collector region, the second conductive type doped cathode region and the collector metal are positioned on the same layer; the semiconductor device further comprises at least one trench gate, more than two virtual trench gates and a diode conducting structure; wherein,
the trench gate comprises a first gate trench penetrating through the first conductive type doped base region to the second conductive type doped drift region, a first gate dielectric layer and a first gate conductive material layer filling the first gate trench are formed in the first gate trench, and the first insulating layer covers the surface of the trench gate;
the virtual trench gate comprises a second gate trench extending inwards from the surface of the first conductive type doped base region, a second gate dielectric layer and a second gate conductive material layer filled in the second gate trench are formed in the second gate trench, and the first insulating layer covers the surface of the virtual trench gate;
the periphery of the trench gate is provided with a second conductive type doped emitter region, and the second conductive type doped emitter region extends inwards from the surface of the first conductive type doped base region to be formed in the first conductive type doped base region;
the diode conducting structure comprises at least two virtual trench gates, and a first conductive type doped region and a second conductive type doped region which extend inwards from the surface of the first conductive type doped base region are formed in the first conductive type doped base region between at least two adjacent virtual trench gates, wherein the doping concentration of the first conductive type doped region is greater than that of the first conductive type doped base region; the second conductive type doped region comprises an upper narrow region and a lower wide region, the left side and the right side of the wide region extend to be connected with two adjacent virtual trench gates, and the narrow region separates the first conductive type doped region into a left part and a right part;
the diode conducting structure is formed above the second conductive type doped cathode region;
the first conductivity type is opposite to the second conductivity type.
Optionally, the width of the left and right parts of the narrow region separating the first conductivity type doped region is the same.
Further, the width of the narrow region is the same as the width of the first conductivity type doped region of the left and right portions thereof.
Optionally, the semiconductor material in the trench gate based reverse conducting IGBT is silicon, silicon carbide, gallium arsenide, or gallium nitride.
Further, the semiconductor material in the trench gate-based reverse-conduction type IGBT is silicon, the material of the first insulating layer is silicon oxide, the material of the first gate dielectric layer and the material of the second gate dielectric layer are silicon oxide, and the material of the first gate conductive material layer and the material of the second gate conductive material layer are doped polysilicon.
Optionally, the depth of the first gate trench is the same as the depth of the second gate trench; the intervals between the first gate trenches and/or the second gate trenches are the same.
Optionally, the material of the emitter metal is aluminum-silicon-copper alloy, and the material of the collector metal is aluminum-silicon-copper alloy.
Optionally, the second conductivity type doped cathode region is formed in a middle region of the same layer, and the first conductivity type doped collector region is formed in both side regions of the same layer.
Optionally, the first conductivity type is P-type, and the second conductivity type is N-type; or the first conductivity type is N type, and the second conductivity type is P type.
Further, the N type is formed by doping VA group elements, and the P type is formed by doping IIIA group elements.
As described above, when the IGBT is turned off, the device is turned on by the negative gate voltage diode, and the N-type doped region between the P-type doped region and the P-type doped base region is inverted to be P-type, so as to form a current channel, and the heavily doped P-type doped region is communicated with the P-type doped base region, which is equivalent to increasing the total doping concentration of the diode anode, improving the anti-surge capability and improving the reliability of the diode; in addition, when the IGBT is conducted, the device bears positive grid voltage, the channel of the diode region is not opened, the heavily doped P-type doped region is isolated, the doping concentration of the anode of the diode is not influenced, and the lower hole extraction speed is kept to ensure that the reverse recovery process has better softness; moreover, the virtual trench gate of the diode working area and the trench gate of the IGBT working area are controlled by the same gate, the positive and negative gate voltages of the switching gate can respectively control the opening of the channels of the IGBT working area and the diode working area, when the IGBT is opened, the channel of the diode working area is in an off state, at the moment, the virtual trench gate of the diode area is completely used as the virtual gate of the IGBT working area, the gate capacitance of the IGBT is regulated, the switching characteristic of the IGBT is improved, the virtual gate is not required to be independently arranged in the IGBT working area, namely the virtual trench gate of the diode working area is used as the control gate for diode conduction when the diode works, and is used as the virtual gate of the IGBT when the IGBT works, and the surface utilization rate of a device is effectively improved; finally, the virtual trench gate and the trench gate are controlled by the same gate, and can be controlled by a gate driver, so that the control complexity of the device is effectively reduced.
Drawings
Fig. 1 to 3 are schematic cross-sectional views showing three exemplary cell regions of the trench gate-based reverse-conduction IGBT of the present invention.
Fig. 4 is a schematic cross-sectional structure of a diode operating region in a cell region of a trench gate-based reverse-conducting IGBT according to the present invention.
Fig. 5 is a schematic cross-sectional structure of an IGBT operating region in a cell region of a trench gate-based reverse-conducting IGBT of the invention.
Description of element reference numerals
10. Emitter metal
11. A first insulating layer
12 P-doped base region
13 N-type doped drift region
14 N-doped buffer layer
15 P-doped collector region
16 N-doped cathode region
17. Collector metal
18. Trench gate
180. First gate trench
181. First gate dielectric layer
182. A first gate conductive material layer
19. Virtual trench gate
190. Second gate trench
191. Second gate dielectric layer
192. Second grid conductive material layer
20. Diode conducting structure
200 P-type doped region
201 N-type doped region
202. Narrow region
203. Wide area
204 P-channel
21 N-doped emitter region
22 N channel
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.
Please refer to fig. 1 to 5. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings rather than the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
The embodiment provides a reverse-conducting type IGBT based on a trench gate, where the reverse-conducting type IGBT based on a trench gate may be an N-type device or a P-type device, and a person skilled in the art may directly and unambiguously understand that the P-type device may be obtained by performing corresponding exchange on a doping type in the N-type device, and the N-type device is taken as an example for illustration in this embodiment.
As shown in fig. 1 to 3, the trench gate-based reverse-conduction IGBT includes a cell region including, from top to bottom: an emitter metal 10, a first insulating layer 11, a P-type doped base region 12, an N-type doped drift region 13, an N-type doped buffer layer 14, a P-type doped collector region 15, an N-type doped cathode region 16 and a collector metal 17 which are positioned on the same layer; also comprises at least one trench gate 18, more than two virtual trench gates 19, and a diode conducting structure 20; wherein,
the trench gate 18 includes a first gate trench 180 penetrating the P-doped base region 12 to the N-doped drift region 13, a first gate dielectric layer 181 and a first gate conductive material layer 182 filling the first gate trench 180 are formed in the first gate trench 180, and the first insulating layer 11 covers the surface of the trench gate 18;
the dummy trench gate 19 includes a second gate trench 190 extending inward from the surface of the P-doped base region 12, a second gate dielectric layer 191 and a second gate conductive material layer 192 filling the second gate trench 190 are formed in the second gate trench 190, and the first insulating layer 11 covers the surface of the dummy trench gate 19; an N-type doped emitter region 21 is formed at the periphery of the trench gate 18, and the N-type doped emitter region 21 is formed in the P-type doped base region 12 by extending inward from the surface of the P-type doped base region 12;
the diode conducting structure 20 includes at least two virtual trench gates 19, and the P-doped base region 12 between at least two adjacent virtual trench gates 19 forms a P-doped region 200 and an N-doped region 201 extending inward from the surface of the P-doped base region 12, where the doping concentration of the P-doped region 200 is greater than the doping concentration of the P-doped base region 12; the N-doped region 201 includes an upper narrow region 202 and a lower wide region 203 (as shown in fig. 4), wherein the left and right sides of the wide region 203 extend to connect with two adjacent virtual trench gates 19, and the narrow region 202 separates the P-doped region 200 into left and right parts;
the diode conducting structure 20 is formed above the N-doped cathode region 16.
The reverse-conducting IGBT based on the trench gate of the present embodiment divides the whole device into an IGBT operating region and a diode operating region according to different doping types of the P-type doped collector region 15 and the N-type doped cathode region 16 located in the same layer. For diode operating region: the emitter metal 10 is an anode metal of the diode, the P-type doped base region 12 is a P-region of the diode, the N-type doped drift region 13 and the N-type doped buffer layer 14 are respectively a drift region and a buffer layer of the diode, the N-type doped cathode region 16 is an n+ region of the diode, and the collector metal 17 is a cathode metal of the diode. For the IGBT operating region, the whole structure is the same as that of a conventional IGBT device.
The working condition of the reverse conducting IGBT based on the trench gate in this embodiment is generally that when the trench gate 18 receives a positive gate voltage, the IGBT device is turned on, and when the trench gate 18 receives a negative gate voltage, the IGBT device is turned off; under normal working conditions, the IGBT is in a state of continuously switching positive and negative grid voltages.
The working mechanism of the reverse-conduction IGBT based on the trench gate of the embodiment comprises: as shown in fig. 5, when the IGBT is operating normally, the gate is subjected to a positive gate voltage, the first gate conductive material layer 182 of the trench gate 18 of the IGBT operating region inverts the P-doped base region 12 close to the surface of the first gate dielectric layer 181 of the trench gate 18 into N-type under the action of the positive gate voltage, the N-channel 22 is opened, the N-doped emitter region 21 on the upper part thereof is communicated with each layer on the lower part thereof to form a current channel, current flows out from the emitter, the IGBT is opened, and the P-channel of the virtual trench gate 19 of the diode operating region cannot be opened under the action of the positive gate voltage, so that the virtual trench gate 19 only serves as the virtual gate of the IGBT to adjust the gate capacitance, and meanwhile, the heavily doped P-doped region 200 is separated from the P-doped base region 12 by the N-doped region 201 and does not participate in diode conduction and does not affect the carrier distribution of the diode; when the IGBT is turned off, the gate is subjected to a negative gate voltage, the first gate conductive material layer 182 of the trench gate 18 in the IGBT working area cannot be turned on under the action of the negative gate voltage, the N channel 22 cannot form a current channel, and the IGBT is turned off, as shown in fig. 4, the virtual trench gate 19 in the diode working area inverts the N-type doped region 201 near the surface of the second gate dielectric layer 191 of the virtual trench gate 19 into a P-type under the action of the negative gate voltage, and the P channel 204 is turned on and is communicated with the P-type doped region 200, so that the heavily doped P-type doped region 200 participates in diode conduction.
When the reverse-conducting IGBT device based on the trench gate is adopted, the device bears a negative gate voltage diode to start to conduct when the IGBT is turned off, and at the moment, an N-type doped region 201 between a P-type doped region 200 and a P-type doped base region 12 is reversely P-type to form a current channel, and a heavily doped P-type doped region 200 is communicated with the P-type doped base region 12, so that the total doping concentration of the anode of the diode is increased, the anti-surge capacity is improved, and the reliability of the diode is improved; in addition, when the IGBT is conducted, the device bears positive grid voltage, the channel of the diode region is not opened, the heavily doped P-type doped region 200 is isolated, the doping concentration of the anode of the diode is not influenced, and the lower hole extraction speed is kept to ensure that the reverse recovery process has better softness; moreover, the virtual trench gate 19 of the diode working area and the trench gate 18 of the IGBT working area are connected to the same gate, the opening of the channels of the IGBT working area and the diode working area can be controlled respectively when the positive and negative gate voltages of the gates are continuously switched, when the IGBT is opened, the channels of the diode working area are in an off state, at the moment, the virtual trench gate 19 of the diode area is completely used as the virtual gate of the IGBT working area, the gate capacitance of the IGBT is regulated, the switching characteristic of the IGBT is improved, the virtual gate is not required to be arranged in the IGBT working area independently, namely the virtual trench gate 19 of the diode working area is used as the control gate for diode conduction when the diode works, and is used as the virtual gate of the IGBT when the IGBT works, and the surface utilization rate of a device is effectively improved; finally, the virtual trench gate 19 and the trench gate 18 are controlled by the same gate, and can be controlled by only one gate driver, so that the control complexity of the device is effectively reduced.
As an example, in the trench gate-based reverse-conduction IGBT of the present embodiment, N-type doping may be formed by doping with a group VA element, for example, phosphorus element, and P-type doping may be formed by doping with a group iiia element, for example, boron element. However, the method is not limited thereto, and other N-type ions and P-type ions can be formed with corresponding doping types.
As an example, in the trench gate-based reverse-conduction IGBT of the present embodiment, one or more diode conducting structures 20 may be disposed in the diode operating region according to actual needs, specifically according to actual needs, for example, in fig. 1, the two virtual trench gates 19 and the P-doped base region 12 therebetween in the diode operating region are set to 1 diode conducting structure 20, in fig. 2, the three virtual trench gates 19 and the P-doped base region 12 therebetween in the diode operating region are set to 2 diode conducting structures 20, and in fig. 3, the three virtual trench gates 19 and the P-doped base region 12 therebetween in the diode operating region are set to 1 diode conducting structure 20.
As an example, the width of the left and right portions of the narrow region 202 separating the P-type doped region 200 is preferably the same, i.e., the width of the P-type doped region 200 on the left side of the narrow region 202 is the same as the width of the P-type doped region 200 on the right side as shown in fig. 1. More preferably, the width of the narrow region 202 is also the same as the width of the P-type doped region 200 around the narrow region.
As an example, the semiconductor material used in the trench gate based reverse-conduction IGBT of the present embodiment may be selected from semiconductor materials conventionally used in the art, such as silicon, silicon carbide, gallium arsenide, gallium nitride, or the like, which are suitable for fabricating IGBT devices. Preferably, when the semiconductor material used in the trench gate-based reverse-conduction IGBT is silicon, the material of the first insulating layer 11 is selected to be silicon oxide, the material of the first gate dielectric layer 181 and the material of the second gate dielectric layer 191 are selected to be silicon oxide, and the material of the first gate conductive material layer 182 and the material of the second gate conductive material layer 192 are selected to be doped polysilicon. Preferably, the first gate conductive material layer 182 and the second gate conductive material layer 192 are selected to be N-doped polysilicon, such as PH 3 The dopant is N-doped.
It should be noted that, in terms of physical function, there is no relation between the first gate trench 180 and the second gate trench 190, that is, the shapes, sizes, depths, intervals, and the like of the first gate trench 180 and the second gate trench 190 are not limited, that is, the diameters of the first gate trench 180 and the second gate trench 190 may be the same or different, the depths may be the same or different, the pitches may be the same or different, the cross-sectional shapes may be the same or different, and the like, and specifically, the configuration may be performed according to different design requirements. Preferably, all parameters of the first gate trench 180 and the second gate trench 190 may be designed to be the same on the premise of meeting the design requirement, so that the first gate trench and the second gate trench may be manufactured in the same process during the process, so as to reduce the process complexity.
As an example, the materials of the emitter metal 10 and the collector metal 17 may be any metal material suitable for preparing a metal electrode, for example, an al-si-cu alloy, al, w, ti, pt, or the like may be selected as the materials.
As an example, as shown in fig. 1, the N-type doped cathode region 16 is formed in the middle region of the same layer, and the P-type doped collector region 15 is formed in both side regions of the same layer. But is not limited thereto, and is specifically set according to actual needs.
As described above, in this embodiment, the N-type device is used to describe the reverse-conducting IGBT based on the trench gate in this embodiment, and in practice, the doping type in the N-type device may be correspondingly changed to obtain the P-type device.
In summary, the invention provides a reverse-conducting IGBT based on a trench gate, when the IGBT is turned off, the device is subjected to a negative gate voltage diode to start to turn on, at this time, the N-type doped region between the P-type doped region and the P-type doped base region is inverted to be P-type, forming a current channel, and the heavily doped P-type doped region is communicated with the P-type doped base region, which is equivalent to increasing the total doping concentration of the diode anode, improving the anti-surge capability and improving the reliability of the diode; in addition, when the IGBT is conducted, the device bears positive grid voltage, the channel of the diode region is not opened, the heavily doped P-type doped region is isolated, the doping concentration of the anode of the diode is not influenced, and the lower hole extraction speed is kept to ensure that the reverse recovery process has better softness; moreover, the virtual trench gate of the diode working area and the trench gate of the IGBT working area are connected on the same gate, the opening of the channels of the IGBT working area and the diode working area can be controlled respectively when the positive and negative gate voltages of the gates are continuously switched, the channels of the diode working area are in an off state when the IGBT is opened, the virtual trench gate of the diode area is completely used as the virtual gate of the IGBT working area, the gate capacitance of the IGBT is regulated, the switching characteristic of the IGBT is improved, the virtual gate is not required to be independently arranged in the IGBT working area, namely the virtual trench gate of the diode working area is used as the control gate for diode conduction when the diode works, and is used as the virtual gate of the IGBT when the IGBT works, and the surface utilization rate of a device is effectively improved; and finally, the virtual trench gate and the trench gate are controlled by the same gate, and can be controlled by only the same gate driver, so that the control complexity of the device is effectively reduced. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (10)
1. The reverse-conduction IGBT based on the trench gate comprises a cell region, and is characterized in that the cell region comprises from top to bottom: the semiconductor device comprises an emitter metal, a first insulating layer, a first conductive type doped base region, a second conductive type doped drift region, a second conductive type doped buffer layer, a first conductive type doped collector region, a second conductive type doped cathode region and a collector metal, wherein the first conductive type doped collector region, the second conductive type doped cathode region and the collector metal are positioned on the same layer; the semiconductor device further comprises at least one trench gate, more than two virtual trench gates and a diode conducting structure; wherein,
the trench gate comprises a first gate trench penetrating through the first conductive type doped base region to the second conductive type doped drift region, a first gate dielectric layer and a first gate conductive material layer filling the first gate trench are formed in the first gate trench, and the first insulating layer covers the surface of the trench gate;
the virtual trench gate comprises a second gate trench extending inwards from the surface of the first conductive type doped base region, a second gate dielectric layer and a second gate conductive material layer filled in the second gate trench are formed in the second gate trench, and the first insulating layer covers the surface of the virtual trench gate;
the periphery of the trench gate is provided with a second conductive type doped emitter region, and the second conductive type doped emitter region extends inwards from the surface of the first conductive type doped base region to be formed in the first conductive type doped base region;
the diode conducting structure comprises at least two virtual trench gates, a first conductive type doped region and a second conductive type doped region which extend inwards from the surface of the first conductive type doped base region are formed in the first conductive type doped base region between at least one pair of adjacent virtual trench gates, the doping concentration of the first conductive type doped region is larger than that of the first conductive type doped base region, and the first conductive type doped region is in contact with the emitter metal; the second conductive type doped region comprises an upper narrow region and a lower wide region, the left side and the right side of the wide region extend to be connected with two adjacent virtual trench gates, and the narrow region separates the first conductive type doped region into a left part and a right part;
the virtual trench gate and the trench gate are controlled by the same gate;
the diode conducting structure is formed above the second conductive type doped cathode region;
the first conductivity type is opposite to the second conductivity type.
2. The trench gate based reverse conducting IGBT of claim 1 wherein: the width of the left and right parts of the first conductive type doped region separated by the narrow region is the same.
3. The trench gate based reverse conducting IGBT of claim 2 wherein: the width of the narrow region is the same as the width of the first conductivity type doped region of the left and right portions thereof.
4. The trench gate based reverse conducting IGBT of claim 1 wherein: the semiconductor material in the reverse-conduction IGBT based on the trench gate is silicon, silicon carbide, gallium arsenide or gallium nitride.
5. The trench gate based reverse conducting IGBT of claim 4 wherein: the semiconductor material in the reverse-conduction IGBT based on the trench gate is silicon, the material of the first insulating layer is silicon oxide, the material of the first gate dielectric layer and the material of the second gate dielectric layer are silicon oxide, and the material of the first gate conductive material layer and the material of the second gate conductive material layer are doped polysilicon.
6. The trench gate based reverse conducting IGBT of claim 1 wherein: the depth of the first gate trench is the same as the depth of the second gate trench; the intervals between the first gate trenches and/or the second gate trenches are the same.
7. The trench gate based reverse conducting IGBT of claim 1 wherein: the material of the emitter metal is aluminum-silicon-copper alloy, and the material of the collector metal is aluminum-silicon-copper alloy.
8. The trench gate based reverse conducting IGBT of claim 1 wherein: the second conductive type doped cathode region is formed in the middle region of the same layer, and the first conductive type doped collector region is formed in both side regions of the same layer.
9. The trench gate based reverse conducting IGBT of claim 1 wherein: the first conductivity type is P type, and the second conductivity type is N type; or the first conductivity type is N type, and the second conductivity type is P type.
10. The trench gate based reverse conducting IGBT of claim 9 wherein: and doping VA group elements to form the N type, and doping IIIA group elements to form the P type.
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