CN116504768A - High-color-rendering and spectrum-continuous white light LED (light-emitting diode) package and light-emitting device - Google Patents
High-color-rendering and spectrum-continuous white light LED (light-emitting diode) package and light-emitting device Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
Abstract
The invention relates to a white light LED package body with high color rendering and continuous spectrum and a light-emitting device. The white light LED package includes: a single LED chip unit or a multiple LED chip unit; each LED chip unit consists of 3 LED chips with different wave bands which are arranged in series, and the LED chip units are arranged in series, in parallel or in a combination mode, and the arrangement sequence of the LED chips with the 3 different wave bands in the multi-chip unit can be the same or different. The emission peak wavelength of the LED chip is 380nm-480nm, and is preferably an InGaN or GaN series blue light semiconductor chip. The invention changes the current packaging method of the full spectrum white light LED, packages three LED chips with different wave bands in a single package body, then coats fluorescent powder, and changes the single wave band LED chip excited fluorescent powder to emit white light into the multi wave band LED chip excited fluorescent powder to emit white light together, thereby having higher color rendering index and better spectral continuity.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to a white light LED packaging body method with high color rendering and continuous spectrum and a light-emitting device.
Background
Today, where energy is increasingly strained, compared with the traditional fluorescent lamp and incandescent lamp, the white light LED as a novel illumination light source has the remarkable advantages of energy conservation, environmental protection, short response time, long service life and the like. Currently, the LED industry is rapidly developing, the luminous efficiency is rising year by year, the price is decreasing year by year, and white LEDs are gradually replacing fluorescent lamps and incandescent lamps and entering the market of general illumination. Along with the accelerated penetration of the white light LEDs in the illumination field, the requirements of the market on the quality of the white light LED light source are higher and higher, particularly in the aspect of indoor illumination, the requirements on the white light LED light source are emphasized, the original pure pursuit of high brightness is converted into the pursuit of high quality with the light color performances of color rendering index, color temperature and the like, even the pursuit of full spectrum illumination similar to sunlight is pursued, and the development of full spectrum white light LED products is accelerated by domestic and foreign packaging enterprises in a dispute.
The current full spectrum white light LED implementation mode mainly comprises a multi-chip type LED and a single-chip type LED, and the implementation modes are as follows.
(1) The multi-chip white light LED utilizes the principle of three primary colors to integrate and mix a plurality of LED chips emitting red, green and blue light in proportion to obtain white light. The technology can randomly call the required color by controlling the current applied to each LED chip, and the color tone and the color temperature are flexibly adjusted, so that the color gamut is wider. However, the integrated system and the control system of various LED chips are complex and cannot be realized by a single device, the temperature characteristics and the current characteristics of different LED chips are inconsistent when the LED chips emit light, the decay speed along with time is also inconsistent, the drift of white light color is easily caused, the control systems such as light color feedback, heat aging and the like are required to be added, the cost is further increased, and the maintainability of the system is also reduced.
(2) The single-chip full-spectrum white light LED has the advantages of simple implementation, low cost, more continuous spectrum and the like, and becomes the first choice of packaging enterprises. The implementation manner of the single chip is divided into a blue light chip technology (blue light chip+multi-color emitting fluorescent powder) and a purple light/near ultraviolet chip technology (purple light/near ultraviolet chip+multi-color emitting fluorescent powder). In the quality evaluation of a light source, the color rendering capability of the light source is generally measured by using a Color Rendering Index (CRI), and the higher the color rendering index of the light source, the better the color reducing capability for an irradiated object.
However, due to the light emission principle of the LED light source and the specificity of the spectral distribution, the continuity is not necessarily good even for a light source having a high CRI index. And the human eye can have a large deviation from the color perception of the light source itself, such as a greenish or pink color of the light source. The North American Lighting society (IES) has issued a new evaluation method (TM-30-15) for the color rendering capability of light sources, wherein the light sources are evaluated by color fidelity (Rf) and color saturation (Rg), the closer Rf and Rg are to 100, the higher the quality of the light sources, and the average hue and chroma shift is displayed by a color vector graph at the same time, so that the color quality is more comprehensively known, and the defects of the parameters (such as CRI) for evaluating the colors of the light sources traditionally are complemented. In the blue light chip technology, the spectrum of the device has serious spectrum deficiency in a blue-green light part, particularly a large trough exists at 480nm, the peak and the relative spectrum intensity of blue light are very high, the spectrum continuity is poor, the spectrum contrast solar spectrum difference is very large, the partial color rendering index (R9-R15) is lower than 90, and the Rf is only 92 generally, so that the high-quality full-spectrum healthy illumination needs are difficult to realize theoretically. Although the ultraviolet/near ultraviolet chip technology has better continuity in the blue-green light part, the packaging device also has a partial color rendering index (R9-R15) lower than 90, and the Rf is higher and is generally 96. In addition, the ultraviolet/near ultraviolet chip technology has more defects, and because the chip efficiency is lower than that of a blue light chip and the types of fluorescent powder are more, the production yield is lower, the cost is high, the light efficiency of a packaged device is low and the stability is also poor.
Therefore, there is a need to develop a new white LED to avoid the above-mentioned problems in the current full spectrum LED technology.
The information disclosed in this background section is only for enhancement of understanding of the general background of the invention and should not be taken as an acknowledgement or any form of suggestion that this information forms the prior art already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention provides a white light LED package body with high color rendering and continuous spectrum and a light-emitting device, aiming at solving the technical problems of the prior art that a chip system is complex, white light color drift is caused by different chip light-emitting characteristics, spectrum continuity is poor due to spectrum deficiency and a light source color rendering parameter is low.
The first aspect of the present invention provides a white LED package with high color rendering and continuous spectrum, comprising: a single LED chip unit or a multiple LED chip unit; each LED chip unit consists of 3 LED chips with different wave bands which are arranged in series, the LED chip units are arranged in series, in parallel or in a combination mode, and the arrangement sequence of the LED chips with the 3 different wave bands in the LED chip units can be the same or different.
If 2 LED chips with different wave bands are selected, the effect of the scheme is not as good as the spectrum continuity achieved by selecting 3 LED chips; if the LED chips with 4 different wavebands are selected to be connected in series, although the LED chips are theoretically feasible, the conventional packaging form is difficult to put so many chips, and the difference of the chip voltage of each waveband causes great difference of the whole voltage of the packaging body, so that the use is troublesome, and the use system of a plurality of packaging bodies is more complex.
In some embodiments, the emission peak wavelength of the three different wavelength bands of the LED chips is between 380nm and 480nm.
In some embodiments, the emission peak wavelength of the three different wavelength bands of the LED chips is between 430nm and 480nm.
In some embodiments, the emission peak wavelength of the three different wavelength band LED chips is in any one or more of the range of 430nm-440nm, 440nm-445nm, 445nm-450nm, 450nm-460nm, or 460m-480 nm.
In some embodiments, the emission peak wavelengths of the three different wavelength bands of the LED chips are in any one or more of 435nm-440nm, 440nm-443nm, 447nm-450nm, 455nm-460nm, or 465m-470 nm.
In some embodiments, the emission peak wavelengths of the three different wavelength bands of the LED chips are in any one or more of 437nm-440nm, 440nm-443nm, 447nm-450nm, 455nm-458nm, 465nm-468 nm.
In some embodiments, the LED chip is an InGaN or GaN series blue semiconductor chip.
In some embodiments, the LED chip is coated with a phosphor, where the phosphor is one or more of a near ultraviolet LED chip-excited phosphor, a violet LED chip-excited phosphor, or a blue LED chip-excited phosphor.
In some embodiments, the near ultraviolet light LED chip-excited phosphor or the violet light LED chip-excited phosphor is selected from BaMgAl 10 O 17 :Eu、Sr 3 MgSi 2 O 8 :Eu、(Sr,Ba) 10 (PO 4 ) 6 Cl 2 Eu system blue phosphor, siAlON: eu system green phosphor and (Ca, sr) AlSi (ON) 3 One or more of Eu system red fluorescent powder;
the fluorescent powder excited by the blue LED chip is selected from green fluorescent powder of a system of LuAG, ce, gaYAG, ce and SiAlON, yellow fluorescent powder of a system of YAG and (Ca, sr) AlSi (ON) 3 One or more of Eu system red fluorescent powder.
In some embodiments, the above-mentioned phosphor is LuAG: ce, gaYAG: ce system green phosphor and (Ca, sr) AlSi (ON) 3 Eu system red fluorescent powder.
In one placeIn some embodiments, the emission peak wavelength of the green fluorescent powder of the LuAG-Ce and GaYAG-Ce system is 510-540nm, and the half-peak width is 90-120nm; the above (Ca, sr) AlSi (ON) 3 The emission spectrum peak wavelength of Eu system red fluorescent powder is 640-660nm, and half-peak width is 80-120nm.
In some embodiments, white light having a color rendering index Ra.gtoreq.98, R1-R15.gtoreq.90, and a spectral continuum, in the range of color temperatures 2700K-6500K.
The second aspect of the invention provides a white light LED light-emitting device with high color rendering and continuous spectrum, which comprises the packaging body and a bracket or a substrate.
In some embodiments, the material of the bracket is resin, and the material of the substrate is ceramic or metal.
In some embodiments, the support or substrate is selected from any one of a package support, a ceramic support, and a chip-on-board package substrate. The package support may be a surface mount device support.
Compared with the prior art, the invention has the following technical effects:
(1) The invention changes the current packaging method of the full spectrum white light LED, packages three LED chips with different wave bands in a single package, and then coats fluorescent powder, namely, the LED chips with different wave bands are used for exciting the fluorescent powder to emit white light instead of exciting the fluorescent powder to emit white light together, and compared with the light emitting mode of the LED chips with different wave bands, the LED package has higher color rendering index, especially special color rendering index R9-R12, can complement the defects of low wave band and narrow wave, has wider spectrum and better spectral continuity.
(2) The light-emitting device adopts three LED chips with different wave bands, particularly a blue light LED chip with emission peak wavelength of 430nm-480nm, and the trough of a single blue light chip type full-spectrum white light LED at 480nm in the current market is effectively filled through the superposition of the emission spectrum of the LED chips and the superposition of the emission spectrum of fluorescent powder, so that the spectral continuity of the LED chips is relatively better and is more similar to the spectrum of sunlight.
(3) The white light LED light-emitting device manufactured by the invention adopts the blue light LED chips with three preferred different wave bands, namely the blue light LED chips with good stability and emission peak wavelength of 430nm-480nm, and compared with the full spectrum white light LED with the ultraviolet/near ultraviolet chip technology in the current market, the white light LED light-emitting device has higher light efficiency and reliability because the technology of the chip is more mature, has higher excitation efficiency on fluorescent powder and does not use blue fluorescent powder with poor stability.
Drawings
Fig. 1 is a die bonding schematic diagram of a Surface Mount (SMD) light emitting device according to some embodiments of the present invention;
FIG. 2 is a die attach schematic diagram of a Chip On Board (COB) light emitting device according to some embodiments of the invention;
FIG. 3 is a graph showing the relative spectrum of the white light LED of example 1, the spectrum of the reference 3200K standard light source, and the spectrum of the full spectrum white light LED of the present single chip blue light chip technology and the purple light/near ultraviolet chip technology;
FIG. 4 is a graph showing the relative spectrum of the emission of the white light LED of example 2 at a correlated color temperature of 5000K, the reference 5000K solar spectrum, and the full spectrum white light LED of the present single chip blue light chip technology and the purple light/near ultraviolet chip technology;
FIG. 5 is a report chart of the white light emitting device of the embodiment 2 of the present invention tested by using a remote HAAS2000 spectrometer at a correlated color temperature of 5000K;
fig. 6 is a graph showing the relative spectrum of emission of a correlated color temperature 5600K white LED, a reference 5600K standard light source spectrum, and a full spectrum white LED of the present single chip blue chip technology and violet/near ultraviolet chip technology according to embodiment 3 of the present invention.
In the figure:
1-a first LED chip; 2-a second LED chip; 3-a third LED chip; 4-electrode; 5-packaging the bracket; 6-packaging the substrate.
Detailed Description
The technical scheme of the invention is described below through specific embodiments with reference to the accompanying drawings. It is to be understood that the reference to one or more steps of the invention does not exclude the presence of other methods and steps before or after the combination of steps, or that other methods and steps may be interposed between the explicitly mentioned steps. It should also be understood that these examples are illustrative of the present invention and are not intended to limit the scope of the present invention. Unless otherwise indicated, the numbering of the method steps is for the purpose of identifying the method steps only and is not intended to limit the order of arrangement of the method steps or to limit the scope of the invention, which relative changes or modifications may be regarded as the scope of the invention which may be practiced without substantial technical content modification.
The raw materials and instruments used in the examples are not particularly limited in their sources, and may be purchased on the market or prepared according to conventional methods well known to those skilled in the art.
Aiming at the problems of the existing full-spectrum white light LED, the embodiment of the invention provides a light-emitting device which comprises a bracket or a substrate, three LED chips with different wave bands and packaging adhesive mixed with fluorescent powder.
Example 1
According to fig. 1, a white LED package includes a single LED chip unit composed of 3 LED chips of different wavelength bands arranged in series; the LED chips with 3 different wave bands are a first LED chip 1, a second LED chip 2 and a third LED chip 3, and the first LED chip 1, the second LED chip 2 and the third LED chip 3 with three wave bands are InGaN or GaN series blue semiconductor chips with emission peak wavelengths of 437nm-440nm, 447nm-450nm and 455nm-458nm respectively.
The phosphor powder selected in this example:
the red fluorescent powder comprises the following components: caAlSi (ON) 3 Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-peak width is 80-120nm;
the green fluorescent powder has the following composition formula: lu (Lu) 3 Al 5 O 12 Eu or Y 3 (Al,Ga) 5 O 12 Eu, emission spectrum peak wavelength is 515-530nm, half-peak width is 90-120nm.
The preparation process is as follows: mixing the selected red fluorescent powder and green fluorescent powder into packaging silica gel according to a certain proportion, uniformly stirring, and vacuum defoaming; and then uniformly coating the fluorescent powder mixed colloid above the LED chip, and reasonably setting the coating thickness to ensure that the coated fluorescent powder can absorb a certain proportion of blue light emitted by the LED chip, so that the luminous characteristic of the device meets the requirement.
By adjusting the proportion of the fluorescent powder, the change of the color temperature of the white light is realized. The white light was tested for performance by an integrating sphere and the test results are shown in table 1. In addition, table 2 lists the color rendering indices of the full spectrum white LED correlated color temperatures 2700K and 3200K of the present single chip blue chip technology and the violet/near ultraviolet chip technology.
Table 1 example 1 white light test results
TABLE 2 correlated color rendering index of Warm tone full spectrum white LED of single chip technology at present
The emission peak wavelength of the blue light chip adopted by the full spectrum white light LED of the existing single chip blue light chip technology in the table 2 is between 450 and 460nm; the adopted red fluorescent powder has the composition of CaAlSi (ON) 3 Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-peak width is 80-120nm; the green fluorescent powder adopted is Lu 3 Al 5 O 12 Eu, the peak wavelength of the emission spectrum is 515-530nm, and the half-peak width is 90-120nm; the packaging process is identical to that of the above embodiment 1.
In Table 2, the existing single chip ultraviolet chip technology of full spectrum white light LED, generally adopted ultraviolet chip emission peak waveThe length is 400-420nm; the blue fluorescent powder is (Sr, ba) 10 (PO 4 ) 6 Cl 2 Eu, the peak wavelength of the emission spectrum is 440-490nm, and the half-peak width is 50-60nm; the adopted green fluorescent powder has the composition of beta-SiAlON Eu, the emission spectrum peak wavelength is 520-550nm, and the half-peak width is 40-60nm; the adopted red fluorescent powder has the composition of CaAlSi (ON) 3 Eu, the peak wavelength of the emission spectrum is 630-660nm, and the half-peak width is 80-120nm. Mixing blue, green and red fluorescent powder into packaging silica gel according to a certain proportion, uniformly stirring, vacuum defoaming, uniformly coating the fluorescent powder mixed colloid above an LED chip, reasonably setting the coating thickness, ensuring that the coated fluorescent powder can absorb a certain proportion of purple light emitted by the LED chip, and ensuring that the luminous characteristics of the device meet the requirements.
As can be seen from comparison of the test results of Table 1 and Table 2, the white LED lighting device of the embodiment can realize warm-tone white light output with the color rendering index Ra being more than or equal to 98 and R1-R15 being more than or equal to 90 and the color temperature ranging from 2700K to 3500K. Comparing the color rendering index of the full spectrum white light LED of the current single chip blue light chip technology, the color rendering index of the embodiment scheme can be seen to be obviously higher in the aspects of R12 (the color under sunlight is saturated blue) and Rf, and specifically comprises the following steps: when the color temperature is 2700K and 3200K, the color rendering indexes R12 of the embodiment are 97 and 94 respectively, the color rendering indexes R12 of the existing single-chip blue light chip technology are 88 and 80 respectively, the color fidelity (Rf) of the embodiment is 96, and the color fidelity (Rf) of the existing single-chip blue light chip technology is 92 and 90 respectively; compared with the color rendering index of the full spectrum white light LED of the current single chip purple light/near ultraviolet chip technology, the average color rendering index Ra of R1-R8 is specifically as follows: when the color temperatures are 2700K and 3200K, the average color rendering index Ra of R1-R8 of the embodiment is 99, and the average color rendering index Ra of R1-R8 of the existing single-chip ultraviolet/near ultraviolet chip technology is 97, so that the embodiment has obvious advantages.
Fig. 3 is a graph showing the relative spectrum of the emission of the white LED of the present embodiment at the correlated color temperature 3200K, the spectrum of the reference 3200K standard light source, and the relative spectrum of the full spectrum white LED of the present single chip blue chip technology and the violet/near ultraviolet chip technology. As can be seen from fig. 3, the spectrum continuity and smoothness of the embodiment are better, and the spectrum is closer to the spectrum of the reference standard light source, so the light quality of the light emitting device of the embodiment is better.
Example 2
According to fig. 1, a white LED package includes a single LED chip unit composed of 3 LED chips of different wavelength bands arranged in series; the LED chips with 3 different wave bands are a first LED chip 1, a second LED chip 2 and a third LED chip 3, and the first LED chip 1, the second LED chip 2 and the third LED chip 3 with three wave bands are InGaN or GaN series blue semiconductor chips with emission peak wavelengths of 437nm-440nm, 447nm-450nm and 465nm-468nm respectively.
The phosphor powder selected in this example:
the red fluorescent powder comprises the following components: caAlSi (ON) 3 Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-peak width is 80-120nm;
the green fluorescent powder has the following composition formula: lu (Lu) 3 Al 5 O 12 Eu or Y 3 (Al,Ga) 5 O 12 Eu, the peak wavelength of the emission spectrum is 510-530nm, and the half-peak width is 90-120nm;
the preparation process is as follows: mixing the selected red fluorescent powder and green fluorescent powder into packaging silica gel according to a certain proportion, uniformly stirring, and vacuum defoaming; and then, uniformly coating the fluorescent powder mixed colloid above the LED chip, and reasonably setting the coating thickness of the fluorescent powder mixed colloid to ensure that the coated fluorescent powder can absorb a certain proportion of blue light emitted by the LED chip, so that the luminous characteristic of the device meets the requirement.
By adjusting the proportion of the fluorescent powder, the change of the color temperature of the white light is realized. The performance of the white light was tested using an integrating sphere and the test results are shown in table 3. In addition, table 4 lists the color rendering indices of 5000K and 6500K for the correlated color temperatures of full spectrum white LEDs of the present single chip blue chip technology and the violet/near ultraviolet chip technology.
Table 3 example 2 white light test results
TABLE 4 correlated color rendering index of Cold tone full Spectrum white LEDs of the present Single chip technology
As can be seen from comparison of the test results in Table 3 and Table 4, the white light LED lighting device of the embodiment can realize white light output with the color rendering index Ra being more than or equal to 98, R1-R15 being more than or equal to 90 and the color temperature ranging from 4000K-6500K. Compared with the color rendering index of the full spectrum white light LED of the current single chip blue light chip technology, the color rendering index of the scheme of the embodiment is obviously higher in the aspects of R12 and Rf, and is specifically as follows: when the color temperature is 5000K and 6500K, the color rendering indexes R12 of the embodiment are 94 and 98 respectively, the color rendering indexes R12 of the existing single-chip blue light chip technology are 79 and 70 respectively, the color realism (Rf) of the embodiment is 94 and 98 respectively, and the color realism (Rf) of the existing single-chip blue light chip technology is 92 and 90 respectively; compared with the color rendering index of the full spectrum white light LED of the current single chip purple light/near ultraviolet chip technology, the embodiment is obviously higher in the aspects of average color rendering index Ra and special color rendering index R12 of R1-R8, and specifically comprises the following steps: when the color temperature is 5000K and 6500K, the average color rendering indexes Ra of R1-R8 of the embodiment are 100, the average color rendering indexes Ra of R1-R8 of the existing single-chip ultraviolet/near ultraviolet chip technology are 97 and 96 respectively, the special color rendering indexes R12 of the embodiment are 98 and 93 respectively, and the special color rendering indexes R12 of the single-chip ultraviolet/near ultraviolet chip technology are 85 and 91 respectively.
Fig. 4 is a graph showing the relative spectrum of the white LED of the present embodiment, which shows the emission spectrum at a correlated color temperature of 5000K, the solar spectrum at 5000K, and the full spectrum white LED of the present single chip blue chip technology and the violet/near ultraviolet chip technology. As can be seen from fig. 4, the spectrum of the embodiment is closer to the spectrum of sunlight, and the spectral continuity and smoothness of the embodiment are better, so the light quality of the light emitting device of the embodiment is better.
Fig. 5 is a report of the test performed by the HAAS2000 spectrometer at a correlated color temperature of 5000K, wherein the color parameters are as follows:
chromaticity coordinates (2 degrees) x=0.3435, y= 0.3524/u '-0.2100, v' =0.4848, duv=1.044e-003;
correlated color temperature Tc=5064K, dominant wavelength λp= 437.0nm, color Purity: purity-8.8%
Color ratio r=17.8%, g=76.1%, b=6.2%, peak wavelength λp= 437.0nm, half width Δλp=261.5 nm.
Example 3
According to fig. 2, a white LED package includes a multi-LED chip unit; each LED chip unit is composed of 3 LED chips with different wavebands which are arranged in series, and the multi-LED chip units are formed by combining and arranging single LED chip units in parallel after being connected in series, wherein the 3 LED chips with different wavebands are a first LED chip 1, a second LED chip 2 and a third LED chip 3, and the first LED chip 1, the second LED chip 2 and the third LED chip 3 with the three wavebands are InGaN or GaN series blue semiconductor chips with emission peak wavelengths of 440nm-443nm, 447nm-450nm and 455nm-458nm respectively.
The phosphor powder selected in this example:
the red fluorescent powder comprises the following components: caAlSi (ON) 3 Eu, the peak wavelength of the emission spectrum is 640-660nm, and the half-peak width is 80-120nm;
the green fluorescent powder has the following composition formula: lu (Lu) 3 Al 5 O 12 Eu or Y 3 (Al,Ga) 5 O 12 Eu, the peak wavelength of the emission spectrum is 520-540nm, and the half-peak width is 90-120nm;
the preparation process is as follows: mixing the selected red fluorescent powder and green fluorescent powder into packaging silica gel according to a certain proportion, uniformly stirring, and vacuum defoaming; and then, uniformly coating the fluorescent powder mixed colloid above the LED chip, and reasonably setting the coating thickness of the fluorescent powder mixed colloid to ensure that the coated fluorescent powder can absorb a certain proportion of blue light emitted by the LED chip, so that the luminous characteristic of the device meets the requirement.
Through the adjustment of the proportion of the fluorescent powder, the correlated color temperature of the white light is 5600K. The color development performance of the white light was measured by an integrating sphere, and the measurement results are shown in table 5. In addition, table 5 also lists the color rendering index of the correlated color temperature 5600K of the full spectrum white LED of the current single chip blue chip technology and violet/near ultraviolet chip technology.
TABLE 5 color rendering index of full spectrum white LED color temperature 5600K of this example 3 and Single chip technology
As can be seen from comparison of test results, the white light LED light-emitting device with the relative color temperature of 5600K can achieve the color rendering index Ra of more than or equal to 98 and R1-R15 of more than or equal to 90. Compared with the color rendering index of the full spectrum white light LED of the current single chip blue light chip technology, the special color rendering indexes R12 and Rf of the scheme of the embodiment can be seen to be obviously higher, and the specific color rendering indexes are as follows: when the color temperature is 5600K, the color rendering index R12 of the present embodiment is 94, the color rendering index R12 of the existing single-chip blue light chip technology is only 73, the color realism (Rf) of the present embodiment is 97, and the color realism (Rf) of the existing single-chip blue light chip technology is 91 respectively; compared with the color rendering index of the full spectrum white light LED of the current single chip purple light/near ultraviolet chip technology, the overall color rendering index of the invention is slightly higher, and particularly, the color rendering indexes R1-R15 of the embodiment are all improved compared with the current single chip purple light/near ultraviolet chip technology.
Fig. 6 is a graph showing the relative spectrum of the emission spectrum of the correlated color temperature 5600K white LED, the reference spectrum of the 5600K standard light source, and the full spectrum white LED of the present single chip blue chip technology and the violet/near ultraviolet chip technology. As can be seen from the figure, the spectrum of the embodiment is closer to the spectrum of the reference standard light source, and the continuity and smoothness are relatively better, so that the light quality of the light emitting device of the embodiment is better.
Example 4
Aiming at the problems of the existing full-spectrum white light LED, the embodiment provides a light-emitting device which comprises a bracket or a substrate, three LED chips with different wave bands and packaging adhesive mixed with fluorescent powder. The support or substrate is selected from any one of a surface mount device (Surface Mounted Devices, SMD) support, a ceramic support, a chip on board (Chip On Board Light, COB) substrate.
The preparation method of the light-emitting device comprises the following steps: the three LED chips with different wave bands are fixed in the bracket or the substrate through a die bonding program, then the bracket and each LED chip are communicated through a welding wire or welding mode, and the LED chips are connected in series to enable each LED chip to form an electric connection channel.
Fig. 1 is a die bonding schematic diagram of a Surface Mount Device (SMD) light emitting device according to some embodiments of the present invention, which includes a first LED chip 1, a second LED chip 2, a third LED chip 3, two electrodes 4 and a package support 5, wherein the LED chips are communicated with the two electrodes and the LED chips through a wire bonding process, and the two electrodes are respectively arranged at two ends of the package support 5 and used for leading out an anode and a cathode of an electrical connection channel. Wherein, the material of the packaging bracket 5 is resin.
Fig. 2 is a die bonding schematic diagram of a Chip On Board (COB) light emitting device according to some embodiments of the present invention, which includes a first LED chip 1, a second LED chip 2, a third LED chip 3, two electrodes 4, and a package substrate 6, wherein the LED chips are communicated with the two electrodes and the LED chips through a wire bonding process, and the two electrodes 4 are respectively located at opposite corners of the package substrate 6 for leading out an anode and a cathode of an electrical connection channel. Wherein, the material of the packaging substrate 6 is ceramic or metal; the first LED chip 1, the second LED chip 2 and the third LED chip 3 are connected in series to form a unit, and the units can be connected in series, in parallel or in a combination of series and parallel to form a multi-LED chip unit, and in fig. 2, the units are connected in series to form the multi-LED chip unit. Fig. 2 shows a package including a plurality of LED chip groups, and is a light emitting device.
The foregoing descriptions of specific exemplary embodiments of the present invention are presented for purposes of illustration and description. It is not intended to limit the invention to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teaching. The exemplary embodiments were chosen and described in order to explain the specific principles of the invention and its practical application to thereby enable one skilled in the art to make and utilize the invention in various exemplary embodiments and with various modifications as are suited to the particular use contemplated. It is intended that the scope of the invention be defined by the claims and their equivalents.
Claims (10)
1. A high color rendering, spectrally continuous white LED package comprising: a single LED chip unit or a multiple LED chip unit; each LED chip unit consists of 3 LED chips with different wave bands which are arranged in series, the LED chip units are arranged in series, in parallel or in a combination mode, and the arrangement sequence of the LED chips with the 3 different wave bands in the LED chip units can be the same or different.
2. The white LED package of claim 1, wherein the emission peak wavelength of the three different wavelength band LED chips is between 380nm and 480nm.
3. The white LED package of claim 2, wherein the emission peak wavelength of the three different wavelength band LED chips is between 430nm and 480 nm;
preferably, the emission peak wavelength of the three LED chips with different wave bands is in any one range or more ranges from 430nm to 440nm, from 440nm to 445nm, from 445nm to 450nm, from 450nm to 460nm or from 460m to 480 nm;
most preferably, the emission peak wavelength of the three different wave bands of LED chips is in any one range or more of 435nm-440nm, 440nm-443nm, 447nm-450nm, 455nm-460nm or 465m-470 nm.
4. The white LED package of claim 2, wherein the LED chip is an InGaN or GaN series blue semiconductor chip.
5. The white LED package of claim 1, wherein the LED chip is coated with a phosphor, the phosphor being one or more of a near uv LED chip-excited phosphor, a violet LED chip-excited phosphor, or a blue LED chip-excited phosphor.
6. The white LED package of claim 5, wherein the near uv LED chip-excited phosphor or the violet LED chip-excited phosphor is selected from BaMgAl 10 O 17 :Eu、Sr 3 MgSi 2 O 8 :Eu、(Sr,Ba) 10 (PO 4 ) 6 Cl 2 Eu system blue phosphor, siAlON: eu system green phosphor and (Ca, sr) AlSi (ON) 3 One or more of Eu system red fluorescent powder;
the fluorescent powder excited by the blue LED chip is selected from green fluorescent powder of a system of LuAG, ce, gaYAG, ce and SiAlON, yellow fluorescent powder of a system of YAG and (Ca, sr) AlSi (ON) 3 One or more of Eu system red fluorescent powder.
7. The white light LED package according to claim 5, wherein the phosphor is LuAG: ce, gaYAG: ce system green phosphor and (Ca, sr) AlSi (ON) 3 Eu system red fluorescent powder.
8. The white light LED package according to claim 7, wherein the emission peak wavelength of the green fluorescent powder of the Ce-Ce system of LuAG, gaYAG is 510-540nm, and the half-width is 90-120nm; the (Ca, sr) AlSi (ON) 3 Eu system red phosphorThe peak wavelength of the emission spectrum is 640-660nm, and the half-peak width is 80-120nm.
9. The white LED package of any of claims 1-8, wherein the white light has a color rendering index Ra > 98, R1-R15 > 90, and a spectrally continuous white light in the range of color temperatures 2700K-6500K.
10. A high color rendering, spectrally continuous white LED lighting device comprising the package of any one of claims 1-9, and a package support or package substrate; preferably, the support or the substrate is selected from any one of a packaging support (5), a ceramic support and a chip-on-board packaging substrate (6).
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| CN117558723A (en) * | 2024-01-12 | 2024-02-13 | 广东华辉煌光电科技有限公司 | Multi-wave crest continuous full-spectrum eye-protection light source and manufacturing method thereof |
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| CN117558723A (en) * | 2024-01-12 | 2024-02-13 | 广东华辉煌光电科技有限公司 | Multi-wave crest continuous full-spectrum eye-protection light source and manufacturing method thereof |
| CN117558723B (en) * | 2024-01-12 | 2024-03-29 | 广东华辉煌光电科技有限公司 | Multi-wave crest continuous full-spectrum eye-protection light source and manufacturing method thereof |
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