CN116504765A - High-power diode module - Google Patents
High-power diode module Download PDFInfo
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- CN116504765A CN116504765A CN202310467912.9A CN202310467912A CN116504765A CN 116504765 A CN116504765 A CN 116504765A CN 202310467912 A CN202310467912 A CN 202310467912A CN 116504765 A CN116504765 A CN 116504765A
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- cover
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- 238000005422 blasting Methods 0.000 claims abstract description 41
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 239000007787 solid Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 19
- 230000000694 effects Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Packaging Frangible Articles (AREA)
- Rectifiers (AREA)
Abstract
The invention belongs to the technical field of diode modules, and particularly provides a high-power diode module which comprises a substrate and a plurality of diode units, wherein one pin of each diode unit is connected with the other pin of each diode unit, the other pin of each diode unit is welded on the substrate to form high-power connection, the diode unit comprises a diode and a transparent cover sleeved outside the diode, an upper through hole is formed in the top end of the transparent cover, a lower through hole which is on the same vertical axis with the upper through hole is formed in the bottom end of the transparent cover, the pin at the top end of the diode penetrates through the upper through hole upwards and extends to the outer side of the transparent cover, the burning position of a covered area is buckled and extinguished, a blasting bag is also taken to fall onto a thorn cone when the transparent cover falls, the bottom of the blasting bag is punctured by the tip of the thorn cone, inert gas in the blasting bag is blown out and enters the transparent cover, and finally the lower through hole which is opened at the bottom is discharged into a buckling cover to aid in effectively extinguishing the ignition point.
Description
Technical Field
The invention relates to the technical field of diode modules, in particular to a high-power diode module.
Background
A plurality of diodes are welded together on the same PCB substrate to form a diode module, and the diode module is connected in series and then applied to a series of elements such as a matching resistor in a circuit, so that the power can be improved, and the circuit requirement can be met.
The diode module consists of a plurality of diode units, and the diode units are connected in series and are converged to form a high-power module together, so that high power can be generated when the diode module is used, when the adjacent element units are damaged, higher heat is generated on the diode units, according to the heat transfer effect, firstly, the substrate can generate peculiar smell, secondly, the next diode unit is aged due to the high heat caused by the fact that the pins are transferred to the next diode unit, and the service life is influenced.
Disclosure of Invention
The invention aims to solve the technical problems that: through setting up the transparent cover that falls, can make the diode take place the automatic protection when high heat to improve its life.
According to the technical scheme, the high-power diode module comprises a substrate and a plurality of diode units, one pin of each diode unit is connected with the other pin, the other pin is welded on the substrate to form high-power connection, the diode units comprise diodes and transparent covers sleeved outside the diodes, an upper through hole is formed in the top end of each transparent cover, a lower through hole which is on the same vertical axis with the upper through hole is formed in the bottom end of each transparent cover, a top pin of each diode penetrates through the upper through hole upwards and extends to the outer side of each transparent cover, a bottom pin of each diode penetrates through the lower through hole downwards and is welded on the substrate, a fusible block is filled in the lower through hole, the bottom pin of each diode penetrates through the fusible block and is tightly fixed on the fusible block, a counterweight part is arranged at the top end of each transparent cover, a top pin of each diode penetrates through the counterweight part, the bottom end of a body of each diode is adjacent to the bottom end of an inner cavity of each transparent cover, a lower through hole is formed between the top end of the body of each diode and the top cavity of each transparent cover, a puncture bag is formed in the upper through hole, a puncture bag is arranged on the top end of each puncture bag, the puncture bag is arranged on the upper side of the puncture bag, and the puncture bag is vertical to the puncture bag.
As a further preferred feature, the lower through hole is a tapered hole with a bore diameter tapering from the bottom end upwards, the shape of the fusible mass conforms to the tapered hole shape of the lower through hole, and the fusible mass is tightly packed within the lower through hole.
As a further preferred aspect, the weight portion protrudes upward from the top end of the transparent cover, and the weight portion is located above the blasting bag.
As a further preferred aspect, the upper through hole and the lower through hole are disposed at the side of the transparent cover, so that the diode and the pins at the upper and lower ends thereof are located at the axis of the transparent cover, and simultaneously, the inner cavity of the transparent cover is formed with a discharge cavity located at the side of the diode, the bottom end of the blasting bag is gradually inclined downwards towards the axis direction of the transparent cover, the thorn cone is vertically below the maximum inclined part area of the blasting bag, the bottom end of the discharge cavity is communicated with the top surface of the fusible block and is communicated with the falling space,
as a further preferable mode, an inclined surface corner is formed in the bottom end of the inner cavity of the transparent cover, the inclined surface corner and the top end of the lower through hole are smooth and excessive, the blasting bag is a thin rubber bag, and textures corresponding to the upper portion of the thorn cone are arranged on the bottom surface of the blasting bag.
As a further preferred mode, the puncture member is an annular plate, a movable hole is formed in the middle of the puncture member, the puncture member is sleeved on the periphery of a top pin through the movable hole, the puncture member inclines towards the direction of the discharge cavity, the inclination angle of the top surface of the puncture member is parallel to the inclined surface of the bottom of the blasting bag, a movable space is reserved between the bottom surface of the puncture member and the top surface of the diode, a miniature supporting spring with the bottom in contact with the top surface of the diode is arranged in the movable space, the top end of the miniature supporting spring is elastically connected to the bottom surface of the puncture member, the miniature supporting spring is sleeved on the periphery of the top pin, a slope is formed in the top end of the miniature supporting spring, and the puncture member is elastically supported to deflect towards the direction of the discharge cavity through the slope.
As a further preferred aspect, the weight is solid, and the weight is fastened to the top end of the transparent cover.
As a further preference, the blast bag is offset from the discharge vessel.
Compared with the prior art, the invention has the advantages that in the invention, the diode units are spliced together to form a high-power module for use except between the diode units and the substrate and between the elements outside the substrate, a transparent cover is arranged on each diode unit, a blasting bag is arranged in the transparent cover, the transparent cover is connected to the bottom end pin of the diode through a solid fusible block, when the bottom end pin of the diode heats or burns due to circuit reasons, the heat is transferred to the fusible block besides the heating of the pin, the fusible block can be a wax block or an object cooled by fusible substances such as rosin, when the heat exceeds the melting point of the fusible block, the fusible block is melted, thereby opening the lower through hole, and simultaneously, the bottom end pin is not limited by the lower through hole any more, and because the fixed structure formed by the fusible block after the fusible block is melted outside the diode is just the fixed effect formed in the lower through hole, when the fusible block is melted, the fixed effect is utilized, the gravity is failed under the action of the transparent cover, and the transparent cover is a third effect is generated after falling under the action of the transparent cover: the button cover at the bottom is buckled on the substrate, the part of the bottom pin welded on the substrate is isolated from other elements or other diode units, the pin at the bottom is positioned in a single space, and the burning position of the covered area is buckled. The second effect is: when the transparent cover falls, the transparent cover can also bring the blasting bag to fall onto the piercing cone, the top of the piercing cone pierces the bottom of the blasting bag, so that inert gas in the blasting bag can be blown out and enter the transparent cover, and finally, the transparent cover is discharged into the buckling cover through the lower through hole opened at the bottom to assist in effectively extinguishing the burning point. The third function is: if the module is used in a bare mode, the area is proved to be burnt or heated up after the transparent cover is pressed down, and the diode unit is replaced by the phenomenon.
Drawings
Fig. 1 is a schematic diagram of a high-power diode module according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an internal structure of a diode unit according to an embodiment of the present invention;
FIG. 3 is a schematic view of a transparent cover on a diode unit according to an embodiment of the present invention removed from the diode;
fig. 4 is a schematic structural diagram of a high-power diode unit according to an embodiment of the present invention in a bottom view;
fig. 5 is a schematic diagram of an internal structure of a transparent cover in a high-power diode unit according to an embodiment of the present invention;
fig. 6 is a schematic diagram of a top view of a diode-only structure of a high-power diode unit according to an embodiment of the present invention.
In the figure: 1. a substrate; 2. a diode unit; 3. a diode; 4. a transparent cover; 5. an upper through hole; 6. a lower through hole; 7. a fusible mass; 8. a weight part; 9. a falling space; 10. a blasting bag; 11. a piercing member; 12. a thorn cone; 13. a buckle cover; 14. discharging the cavity; 15. bevel corner; 16. a movable hole; 17. a movable space; 18. a miniature support spring; 19. and (5) texture.
Detailed Description
The foregoing and other embodiments and advantages of the invention will be apparent from the following, more complete, description of the invention, taken in conjunction with the accompanying drawings. It will be apparent that the described embodiments are merely some, but not all, embodiments of the invention.
In one embodiment, as shown in fig. 1-6.
The high-power diode module provided by the embodiment comprises a substrate 1 and a plurality of diode units 2, wherein one pin of the plurality of diode units 2 is connected with each other, the other pin is welded on the substrate 1 to form high-power connection, the diode units 2 comprise a diode 3 and a transparent cover 4 sleeved outside the diode 3, an upper through hole 5 is formed at the top end of the transparent cover 4, a lower through hole 6 which is on the same vertical axis with the upper through hole 5 is formed at the bottom end of the transparent cover 4, the top pin of the diode 3 upwards penetrates through the upper through hole 5 and extends to the outer side of the transparent cover 4, the bottom pin of the diode 3 downwards penetrates through the lower through hole 6 and is welded on the substrate 1, a fusible block 7 is filled in the lower through hole 6, the bottom pin of the diode 3 penetrates through the fusible block 7 and is tightly fixed on the fusible block 7, a counterweight part 8 is arranged at the top end of the transparent cover 4, the top pin of the diode 3 penetrates through the counterweight part 8, the bottom end of the body of the diode 3 is adjacent to the bottom end of the inner cavity of the transparent cover 4, a falling space 9 is formed between the top end of the body of the diode 3 and the top end of the inner cavity of the transparent cover 4, the top end of the inner cavity of the transparent cover 4 is connected with a blasting bag 10, the top end of the body of the diode 3 is provided with a puncture piece 11 positioned below the blasting bag 10, the puncture piece 11 is provided with an upward vertical puncture cone 12, the puncture cone 12 faces upward and vertically in the falling space 9 in the direction of the blasting bag 10, inert gas is filled in the blasting bag 10, the top end of the blasting bag 10 is glued on the top surface of the inner cavity of the transparent cover 4, the middle part of the blasting bag 10 is provided with a through hole, the top pin of the diode 3 penetrates through hole, the bottom end of the transparent cover 4 is provided with a buckling cover 13, the buckling cover 13 surrounds the periphery of the lower through hole 6, and the opening of the buckling cover 13 is horn-shaped, with the opening facing downward.
In this embodiment, in addition to the fact that the diode units 2 are spliced together and welded on the same substrate 1 and between the substrate 1 and the elements outside the substrate 1 to form a high-power module, when an overload or burning phenomenon occurs in a certain element or a certain diode unit 2 during use, the bottom pins of the diodes 3 in the diode units 2 generate heat, and because the bottom pins are welded on the substrate 1, the heat is transferred to the fusible pieces 7 when the bottom pins generate heat, the fusible pieces 7 can be wax blocks or objects formed by cooling fusible substances such as rosin, when the heat exceeds the melting point of the fusible pieces 7, the fusible pieces 7 can be melted, so that the lower through holes 6 are opened, and meanwhile, after the fusible pieces 7 are melted, the bottom pins are not limited by the lower through holes 6 any more, because the fixed structure formed by connecting the transparent cover 4 to the outer sides of the diodes 3 is just by using the fixed effect formed by the fusible pieces 7 in the lower through holes 6, when the fusible pieces 7 are melted, the fixed effect is generated, the transparent cover 4 can rapidly lose effect under the action of gravity, and the transparent cover 4 can fall down, and the transparent cover is in a third effect after the dropping effect is generated: the bottom end buckling cover 13 is buckled on the base plate 1, the bottom end pins are welded on the base plate 1 and isolated from other elements or other diode units 2, so that the pins at the bottom end are positioned in a single space, and the ignition position of the covered area is buckled. The second effect is: when the transparent cover 4 falls, the transparent cover also falls onto the puncture cone 12 with the blasting bag 10, the bottom of the blasting bag 10 is punctured by the tip of the puncture cone 12, so that inert gas in the blasting bag 10 is blown out and enters the transparent cover 4, and finally, the lower through hole 6 opened at the bottom is discharged into the buckling cover 13 to assist in effectively extinguishing the burning point. The third function is: if the module is used in a bare mode, after the transparent cover 4 is pressed down, the area is proved to be burnt or heated up, and the diode unit 2 is replaced by the phenomenon.
As shown in fig. 2 and 4, the lower through hole 6 is a tapered hole with a diameter gradually decreasing from the bottom end to the top, the shape of the fusible block 7 is consistent with the tapered hole shape of the lower through hole 6, and the fusible block 7 is tightly filled in the lower through hole 6. The large diameter end of the lower through hole 6 faces downwards, can receive heat, and utilizes the heat of the conical cavity to be collected and then to be exerted on the fusible block 7, so that the fusible block 7 is induced to be fused in a very short time, and the transparent cover 4 is ensured to lose the bottom fixing in a short time and freely fall.
As shown in fig. 2 and 3, the weight 8 protrudes upward from the top end of the transparent cover 4, the weight 8 is solid, and the weight 8 is fastened to the top end of the transparent cover 4. The weight 8 is located above the blast bag 10. The weight part 8 protrudes upwards, so that the weight of the weight part 8 can be increased, and the blasting bag 10 in the transparent cover 4 can be effectively pierced by the piercing cone 12 along with the force when the blasting bag falls.
As shown in fig. 2, 3 and 5, the upper through hole 5 and the lower through hole 6 are disposed at the side of the transparent cover 4, so that the diode 3 and the pins at the upper and lower ends thereof are located at the axis of the transparent cover 4, and meanwhile, the inner cavity of the transparent cover 4 is formed with a discharge cavity 14 located at the side of the diode 3, the bottom end of the blasting bag 10 is gradually inclined downwards towards the axis direction of the transparent cover 4, the stab cone 12 is vertically below the maximum inclined part area of the blasting bag 10, the bottom end of the discharge cavity 14 is communicated with the top surface of the fusible block 7 and the discharge cavity 14 is communicated with the falling space 9. The purpose of the side-offset arrangement of the upper through hole 5 and the lower through hole 6 is to form a discharge cavity 14 positioned on the other side, the formed side-offset discharge cavity 14 just falls on the thorn cone 12 to form a discharge direction inclined to the discharge cavity 14 when the blasting bag 10 falls, so that inert gas discharged when the blasting bag 10 is punctured can enter the discharge cavity 14 completely under the premise of not being blocked by the top end of the diode 3, finally enters the lower through hole 6 through a bevel corner 15 formed at the bottom end of the inner cavity of the transparent cover 4, then is discharged into the buckle cover 13 through the lower through hole 6, and the buckle cover 13 covers the firing point along with the falling of the transparent cover 4 at the moment, so that the inert gas reasonably enters the buckle cover 13 to extinguish a fire source.
An inclined corner 15 is formed at the bottom end of the inner cavity of the transparent cover 4, and the inclined corner 15 and the top end of the lower through hole 6 are smooth and excessive. Facilitating the effective discharge of inert gas into the downward through-hole 6.
As shown in fig. 2, the burst pocket 10 is a thin plastic bag, and the bottom surface of the burst pocket 10 is provided with a texture 19 corresponding to the upper side of the burr 12. When the blasting bag 10 falls along with the transparent cover 4, the texture 19 is just contacted with the puncture cone 12, and the bottom of the blasting bag 10 is effectively punctured by forming effective position limitation through the texture 19 and the tip part of the puncture cone 12, so that slipping is avoided during puncturing.
As shown in fig. 3 and 6, the puncture member 11 is an annular plate, the middle part of the puncture member 11 is provided with a movable hole 16, the puncture member 11 is sleeved on the periphery of a top pin through the movable hole 16, the puncture member 11 inclines towards the direction of the discharge cavity 14, the inclination angle of the top surface of the puncture member 11 is parallel to the bottom inclined surface of the blasting bag 10, a movable space 17 is reserved between the bottom surface of the puncture member 11 and the top surface of the diode 3, a micro supporting spring 18 with the bottom end contacted with the top surface of the diode 3 is arranged in the movable space 17, the top end of the micro supporting spring 18 is elastically connected to the bottom surface of the puncture member 11, the micro supporting spring 18 is sleeved on the periphery of the top pin, the top end of the micro supporting spring 18 is provided with a slope, and the puncture member 11 is elastically supported to deflect towards the direction of the discharge cavity 14 through the slope. Because the movable hole 16 is formed in the puncture member 11, the movable hole 16 is sleeved on the periphery of the top pin, when the blasting bag 10 falls above the puncture member 11, the puncture member 11 can be caused to tilt and swing towards one side of the discharge cavity 14 within the range of the movable space 17, and in order to enable the bottom surface of the puncture member 11 to form a bottom support in the movable space 17 and ensure that the puncture member 11 can realize the swinging motion, the puncture member 11 is provided with a slope at the top end of the micro supporting spring 18, and the puncture member 11 is supported by the slope in a tilting way towards one side of the discharge cavity 14. The blasting bag 10 falls onto the puncture member 11 and is broken by the puncture cone 12, and then inert gas is discharged into the discharge cavity 14 on the side facing the discharge cavity 14 under the action of tilting and swinging the blasting bag towards the discharge cavity 14, so that the tilting arrangement of the puncture member 11 can ensure that the off-side type exhaust performance can be effectively realized. Similarly, the bottom surface of the blast bag 10 is beveled and is offset from the discharge vessel 14.
The above-described embodiments are provided to further explain the objects, technical solutions, and advantageous effects of the present invention in detail. It should be understood that the foregoing is only illustrative of the present invention and is not intended to limit the scope of the present invention. It should be noted that any modifications, equivalent substitutions, improvements, etc. made by those skilled in the art without departing from the spirit and principles of the present invention are intended to be included in the scope of the present invention.
Claims (8)
1. The utility model provides a high-power diode module, its characterized in that includes base plate (1) and a plurality of diode unit (2), a pin interconnect of a plurality of diode unit (2), another pin welds and forms high-power connection on base plate (1), diode unit (2) include diode (3) and cover establish transparent cover (4) in the diode (3) outside, upper through-hole (5) have been seted up on the top of transparent cover (4), lower through-hole (6) on same vertical axis with upper through-hole (5) have been seted up to the bottom of transparent cover (4), the top pin of diode (3) upwards link up in upper through-hole (5) and extend to the outside of transparent cover (4), the bottom foot of diode (3) link up in lower through-hole (6) and weld in base plate (1), the bottom of diode (3) is filled with fusible piece (7) in lower through-hole (6), the bottom of diode (3) is passed fusible piece (7) and is closely fixed in fusible piece (7), the bottom of transparent cover (8) is located on the bottom of transparent cover (3) is close to the top of transparent cover (8), the bottom of diode (3) is adjacent to the top of body (8), so that body top of diode (3) with form space (9) that falls between the inner chamber top of translucent cover (4), the inner chamber top of translucent cover (4) is connected with blast bag (10), the body top of diode (3) is equipped with puncture piece (11) that are located blast bag (10) below, be equipped with on puncture piece (11) upwards vertically thorn awl (12), thorn awl (12) are in space (9) that falls towards the direction of blast bag (10) up vertically, are filled with inert gas in blast bag (10), and the top veneer of blast bag (10) is in on the inner chamber top surface of translucent cover (4), the middle part of blast bag (10) is equipped with the through-hole, the top pin of diode (3) passes the through-hole, the bottom of translucent cover (4) is equipped with detains cover (13), detain cover (13) around the periphery of lower through-hole (6), just detain the opening of cover (13) is loudspeaker form, and the opening is down.
2. A high power diode module according to claim 1, characterized in that the lower through hole (6) is a tapered hole with a diameter tapering from the bottom end upwards, the shape of the fusible block (7) is consistent with the tapered hole shape of the lower through hole (6), and the fusible block (7) is tightly filled in the lower through hole (6).
3. A high power diode module according to claim 2, characterized in that the weight (8) protrudes upwards from the top end of the transparent cover (4), the weight (8) corresponding to above the blasting bag (10).
4. A high-power diode module according to claim 3, wherein the upper through hole (5) and the lower through hole (6) are arranged on the eccentric side of the transparent cover (4), so that the diode (3) and pins at the upper end and the lower end of the diode are eccentric to the axis of the transparent cover (4), a discharge cavity (14) positioned on the eccentric side of the diode (3) is formed in the inner cavity of the transparent cover (4), the bottom end of the blasting bag (10) is gradually inclined downwards towards the axis direction of the transparent cover (4), the thorn cone (12) is vertical to the lower part of the maximum inclined part area of the blasting bag (10), the bottom end of the discharge cavity (14) is communicated with the bottom end of the diode (3) and the top surface of the fusible block (7), and the discharge cavity (14) is communicated with the falling space (9).
5. The high-power diode module according to claim 4, wherein an inclined corner (15) is formed at the bottom end of the inner cavity of the transparent cover (4), the inclined corner (15) and the top end of the lower through hole (6) are smooth and excessive, the blasting bag (10) is a thin plastic bag, and the bottom surface of the blasting bag (10) is provided with textures (19) corresponding to the upper part of the thorn cone (12).
6. The high-power diode module according to claim 5, wherein the puncture member (11) is an annular plate, a movable hole (16) is formed in the middle of the puncture member (11), the puncture member (11) is sleeved on the periphery of a top pin through the movable hole (16), the puncture member (11) inclines towards the direction of the discharge cavity (14), the inclination angle of the top surface of the puncture member (11) is parallel to the bottom inclined surface of the blasting bag (10), a movable space (17) is reserved between the bottom surface of the puncture member (11) and the top surface of the diode (3), a micro supporting spring (18) with the bottom end in contact with the top surface of the diode (3) is arranged in the movable space (17), the top end of the micro supporting spring (18) is elastically connected to the bottom surface of the puncture member (11), the micro supporting spring (18) is sleeved on the periphery of the top pin, the top end of the micro supporting spring (18) is provided with a slope, and the top end of the micro supporting spring (18) is elastically supported to the discharge cavity (14) towards the direction by the slope.
7. The high-power diode module as claimed in claim 6, wherein the weight part (8) is solid, and the weight part (8) is fastened to the top end of the transparent cover (4).
8. A high power diode module according to claim 7, wherein the blast bag (10) is laterally offset from the discharge vessel (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310467912.9A CN116504765B (en) | 2023-04-27 | 2023-04-27 | High-power diode module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310467912.9A CN116504765B (en) | 2023-04-27 | 2023-04-27 | High-power diode module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN116504765A true CN116504765A (en) | 2023-07-28 |
| CN116504765B CN116504765B (en) | 2023-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310467912.9A Active CN116504765B (en) | 2023-04-27 | 2023-04-27 | High-power diode module |
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| Country | Link |
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| CN (1) | CN116504765B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1116096A (en) * | 1953-12-21 | 1956-05-03 | Philips Nv | Method of manufacturing an electrode system, in particular for diodes or crystal transistors |
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| US20040071175A1 (en) * | 2002-10-07 | 2004-04-15 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
| US20090140416A1 (en) * | 2007-11-29 | 2009-06-04 | Sharp Kabushiki Kaisha | Cap member and semiconductor device employing same |
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| JP2015070039A (en) * | 2013-09-27 | 2015-04-13 | 三菱電機株式会社 | Optical module, lens cap for optical module |
| JP2019186208A (en) * | 2018-03-30 | 2019-10-24 | エナジーサポート株式会社 | Cylindrical cutout |
| CN209845557U (en) * | 2019-04-09 | 2019-12-24 | 深圳市宏贯光电科技有限公司 | Large-scale LED display screen waterproof construction |
| CN210224000U (en) * | 2019-09-23 | 2020-03-31 | 苏州宽晟电子有限公司 | Waterproof diode |
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2023
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Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1116096A (en) * | 1953-12-21 | 1956-05-03 | Philips Nv | Method of manufacturing an electrode system, in particular for diodes or crystal transistors |
| GB1066959A (en) * | 1963-08-19 | 1967-04-26 | Philco Ford Corp | Improvements in and relating to semiconductor devices and to the manufacture thereof |
| WO2000029256A2 (en) * | 1998-11-13 | 2000-05-25 | Autoliv Asp, Inc. | An ultra low cost inflator device and method of manufacturing such |
| US20040071175A1 (en) * | 2002-10-07 | 2004-04-15 | Sharp Kabushiki Kaisha | Semiconductor laser device and method for producing the same |
| US20090261535A1 (en) * | 2004-12-15 | 2009-10-22 | Commissariat A L'energie Atomique | Device and method for hermetically sealing a cavity in an electronic component |
| US20090140416A1 (en) * | 2007-11-29 | 2009-06-04 | Sharp Kabushiki Kaisha | Cap member and semiconductor device employing same |
| JP2015070039A (en) * | 2013-09-27 | 2015-04-13 | 三菱電機株式会社 | Optical module, lens cap for optical module |
| JP2019186208A (en) * | 2018-03-30 | 2019-10-24 | エナジーサポート株式会社 | Cylindrical cutout |
| CN209845557U (en) * | 2019-04-09 | 2019-12-24 | 深圳市宏贯光电科技有限公司 | Large-scale LED display screen waterproof construction |
| CN210224000U (en) * | 2019-09-23 | 2020-03-31 | 苏州宽晟电子有限公司 | Waterproof diode |
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| Publication number | Publication date |
|---|---|
| CN116504765B (en) | 2023-12-08 |
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