CN116493185A - Film preparation device and method - Google Patents
Film preparation device and method Download PDFInfo
- Publication number
- CN116493185A CN116493185A CN202210057851.4A CN202210057851A CN116493185A CN 116493185 A CN116493185 A CN 116493185A CN 202210057851 A CN202210057851 A CN 202210057851A CN 116493185 A CN116493185 A CN 116493185A
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- Prior art keywords
- container
- substrate
- film
- solution
- air
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- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 239000010408 film Substances 0.000 claims abstract description 76
- 239000010409 thin film Substances 0.000 claims abstract description 39
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 238000004891 communication Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 27
- 238000004140 cleaning Methods 0.000 claims description 21
- 238000010926 purge Methods 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000007789 sealing Methods 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 2
- 239000002245 particle Substances 0.000 abstract description 7
- 239000000428 dust Substances 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 5
- 230000000630 rising effect Effects 0.000 abstract description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical group CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000012459 cleaning agent Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- UOCLXMDMGBRAIB-UHFFFAOYSA-N 1,1,1-trichloroethane Chemical compound CC(Cl)(Cl)Cl UOCLXMDMGBRAIB-UHFFFAOYSA-N 0.000 description 1
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002238 carbon nanotube film Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 239000002079 double walled nanotube Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 229940078552 o-xylene Drugs 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002109 single walled nanotube Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C3/00—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material
- B05C3/02—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material
- B05C3/09—Apparatus in which the work is brought into contact with a bulk quantity of liquid or other fluent material the work being immersed in the liquid or other fluent material for treating separate articles
- B05C3/109—Passing liquids or other fluent materials into or through chambers containing stationary articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C13/00—Means for manipulating or holding work, e.g. for separate articles
- B05C13/02—Means for manipulating or holding work, e.g. for separate articles for particular articles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C15/00—Enclosures for apparatus; Booths
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2203/00—Other substrates
- B05D2203/30—Other inorganic substrates, e.g. ceramics, silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Wood Science & Technology (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Abstract
The invention discloses a film preparation device and a film preparation method, comprising the following steps: a first container for holding a thin film solution; a second container in communication with the first container; and a substrate disposed within the second container; the first container is provided with an air port communicated with the inside, the air port is used for ventilating and pressurizing the first container, the film solution in the first container is pressed into the second container until the substrate is immersed, then the air in the first container is discharged through the air port, the film solution in the second container flows back to the first container, and the substrate is leaked out, so that one-time film preparation is completed. The film preparation device realizes the lifting effect by controlling the rising and falling of the liquid level of the solution under the air pressure, and the substrate is kept fixed without lifting movement, so that the mechanical vibration caused by the movement of a clamp for clamping the substrate is avoided; in addition, the film forming process of the film preparation device can isolate the influence of external dust particles or air flow disturbance and the like, and improve the film quality.
Description
Technical Field
The invention relates to the technical field of film forming, in particular to a film preparation device and a film preparation method.
Background
The dip-draw process to form a film is generally: the whole cleaned substrate is immersed in the prepared solution, then the substrate is stably pulled out of the solution at a precisely controlled uniform speed, a uniform liquid film is formed on the surface of the substrate under the action of viscosity and gravity, and then the solvent is rapidly evaporated, so that the solvent of the solution attached to the surface of the substrate is rapidly evaporated and the solute forms a film. The thickness of the film depends on the concentration, viscosity and pull rate of the solution. In the dip-draw process, a chuck is typically used to hold a substrate and a motor drives the chuck up and down to allow the substrate to freely move in and out of solution.
In such a case, the jig may damage the surface of the substrate, and may cause failure of forming a thin film at the nip contact position, thereby deteriorating the uniformity of the surface of the thin film. On the other hand, because the movement stroke of the substrate is large, and the granularity control of the surrounding environment of the substrate is difficult due to the movement of the clamp and the driving part, when the substrate is pulled out of the solution, the solution attached to the surface of the substrate can be contacted with dust particles in the air, so that the surface of the substrate is polluted, and the quality of the film can be influenced.
In addition, mechanical vibration is inevitably generated in the process of lifting the clamp and the substrate, so that the solution level and the stability of the solution attached to the surface of the substrate are affected, and the consistency of film formation is deteriorated. Meanwhile, the existing lifting device is large in size, sealing is difficult to achieve, external influences are isolated, and disturbance of air flow in the process can influence stability of the liquid level of the solution and volatilization speed of the solution attached to the surface of the substrate, so that film forming process is influenced. And only can realize single-sheet lifting, and the film deposition efficiency is lower.
In view of this, the present invention has been made.
Disclosure of Invention
In order to solve the problems, the invention provides a film preparation device and a film preparation method, which can improve the consistency of the film surface and the film forming quality without using a clamp, and the specific technical scheme is as follows:
in a first aspect, an embodiment of the present invention provides a thin film preparation apparatus, including:
a first container for holding a film solution, the first container having an air port (2) communicating with the interior and a first container port;
the second container is positioned above the first container and is communicated with the first container through a liquid guide pipe, and the liquid guide pipe is provided with a sealing plug which is sealed at the opening of the first container;
the second container has a second container cover thereon and a substrate support disposed within the second container.
In an embodiment of the first aspect of the invention, the catheter extends into the bottom of the first container and is spaced from the bottom wall of the first container by a distance of between 1 and 10 mm;
the first container mouth is a frosted mouth with frosted inner ring, and the sealing plug is a frosted plug with frosted outer ring.
In an embodiment of the first aspect of the present invention, the substrate support includes a horizontal tray and at least 3 legs uniformly disposed along an outer circumference of the horizontal tray.
In an embodiment of the first aspect of the invention, there is a purge vessel in communication with the first vessel and the second vessel, wherein there is a three-way valve between the first vessel, the second vessel and the purge vessel.
In an embodiment of the first aspect of the present invention, an electric field or magnetic field generating means for applying an electric field or magnetic field during the film formation is provided outside the film formation apparatus.
In an embodiment of the first aspect of the present invention, the air control device further comprises an electrical control box, an upper computer, a pressurizing air channel and a pressure release air channel.
In an embodiment of the first aspect of the present invention, one end of the pressurization gas path is connected with a main gas inlet pipeline, a pressurization gas path needle valve, a pressurization gas path pneumatic diaphragm valve and a pressurization gas path one-way valve are sequentially connected, and the other end of the pressurization gas path needle valve is connected with the gas port of the first container;
one end of the pressure relief air channel is connected with a pressure relief air discharge pipeline, a pressure relief air channel needle valve, a pressure relief pneumatic diaphragm valve and a pressure relief air channel one-way valve are sequentially connected, and the other end of the pressure relief air channel is connected with the air port of the first container.
The second aspect of the present invention also provides a method for preparing a thin film by a thin film preparation apparatus, comprising the steps of:
introducing the thin film solution into a first container;
placing at least one substrate on a substrate support and placing the substrate support in a second container;
the pressurizing air channel is controlled to be conducted and the pressure releasing air channel is controlled to be closed through the air control device, the pressurizing air channel is used for ventilating and pressurizing the first container through the air port, and the film solution in the first container is pressed into the second container through the liquid guide tube until the substrate is immersed;
the pressurizing air channel is controlled to be closed and the pressure relief air channel is controlled to be conducted through the air control device, air in the first container is discharged from the pressure relief air channel through the air port, the pressure relief speed of the pressure relief air channel is controlled to enable the film solution in the second container to descend and flow back to the first container, the substrate is completely exposed, and nitrogen or compressed air is introduced through the purging air channel to purge the surface of the substrate, so that no solution residue exists on the surface; repeating the above process for several times to complete the film preparation. By controlling the number of repetitions, control of film density can be achieved.
In an embodiment of the second aspect of the present invention, the substrate is immersed in the thin film solution in the second container for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes, and then the pressure release speed of the pressure release gas path is controlled so that the thin film solution in the second container (6) is rapidly lowered, and after the thin film solution is lowered to expose the substrate, the substrate is kept under the solvent atmosphere formed by the volatilization of the solvent for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes;
pressurizing the cleaning vessel to allow the cleaning solution to enter the second vessel (6) and submerge the substrate for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes;
controlling the pressure relief gas circuit to enable the cleaning solution in the second container (6) to flow back to the cleaning container, and increasing the pressure or nitrogen purging to enable the surface of the substrate to be dried; and then pressurizing to enable the film solution in the first container to enter the second container, immersing the substrate, and repeating the process to finish film preparation.
In an embodiment of the second aspect of the present invention, the thin film solution is a carbon nanotube solution, and the surface of the substrate has an insulating material, and the insulating material is selected from silicon oxide, glass, a polymer, yttrium oxide, hafnium oxide, or aluminum oxide.
In an embodiment of the second aspect of the present invention, the substrate is purged by introducing nitrogen or compressed air through the purge gas path after exposing the substrate.
According to the film preparation device, the lifting effect is realized by controlling the rising and falling of the liquid level of the solution through the air pressure, and the substrate is kept fixed without lifting movement, so that on one hand, no mechanical vibration is generated, the production noise of mechanical equipment is low, and the disturbance of the mechanical vibration on the liquid level of the solution and the substrate is avoided, so that film formation is influenced; on the other hand, impurity ions are prevented from being introduced by the movement of a clamp for clamping the substrate, so that the high-quality film is formed; in addition, the substrate is kept motionless during the film preparation process, so that external fields such as an electric field, a magnetic field and the like can be conveniently applied to induce alignment. Meanwhile, the film preparation device disclosed by the invention is contacted with dust particles as little as possible in the film forming process, and no metal material exists in the whole device, so that the film is prevented from being polluted by metal ions. The film device can be placed in a closed environment at the same time, so that the film quality is influenced, the device is clean and the cost is low, and the interference and pollution of air flow disturbance, dust particles in the air and the like to film formation are avoided. In addition, the device can simultaneously place a plurality of substrates, realizes batch preparation, greatly improves the film making efficiency, can also be compatible with wet etching and cleaning processes, and has wide application prospect.
Drawings
FIG. 1 is a schematic view showing the structure of a thin film formation apparatus according to an embodiment of the present invention in which a substrate is horizontally placed;
FIG. 2 is an exploded view of a thin film fabrication apparatus according to an embodiment of the present invention for horizontally placing a substrate;
FIG. 3 is a schematic diagram of a bypass purge vessel;
reference numerals illustrate: 1-first container 2-gas port 3-first clamp connection 4-first container port 5-second clamp connection 6-second container 7-gas vent 8-second container lid 9-purge gas inlet/vent 10-catheter 11-sealing plug 12-tray 13-support base 14-foot 15 three-way valve 16 catheter
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. It will be apparent that the described embodiments are some, but not all, embodiments of the invention.
Thus, the following detailed description of the embodiments of the invention is not intended to limit the scope of the invention, as claimed, but is merely representative of some embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
It should be noted that, under the condition of no conflict, the embodiments of the present invention and the features and technical solutions in the embodiments may be combined with each other. It should be noted that like reference numerals and letters in the present invention denote like items in the following figures, and thus once an item is defined in one figure, no further definition or explanation thereof is necessary in the following figures.
In the description of the present invention, it should be noted that, the terms "upper", "lower", and the like indicate an azimuth or a positional relationship based on the azimuth or the positional relationship shown in the drawings, or an azimuth or a positional relationship conventionally put in use of the inventive product, or an azimuth or a positional relationship conventionally understood by those skilled in the art, such terms are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the apparatus or element to be referred must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.
Referring to fig. 1 to 3, the present embodiment provides a thin film formation apparatus including:
a first container 1 for holding a thin film solution, which in this embodiment is a carbon nanotube solution, the first container 1 having a gas port 2 and a first container port 4 communicating with the inside; a second container 6 with an opening, the second container 6 being located above the first container 1 and communicating with the first container 1 via a catheter which extends into the bottom of said first container 1 and is spaced from the bottom wall of the first container 1 by a distance of between 1 and 10 mm. In another embodiment the bottom opening of the catheter is a beveled opening preventing the catheter from extending into the first container 1 and being blocked by the bottom wall, resulting in a failure of the solution to circulate therethrough. The film solution can be naturally refluxed into the first container 1 by gravity by pressing the first container 1 and the second container 6 into the second container 6 up and down, and meanwhile, as the solvent in the film solution has a certain corrosion effect, a rigid quartz tube or a corrosion-resistant polymer material, such as polytetrafluoroethylene, is adopted as a catheter to prevent corrosion to a common plastic or rubber hose, and the first container and the second container are also all made of an all-quartz material or a corrosion-resistant polymer material, and the first container and the second container are arranged up and down to be matched with the rigid catheter to avoid external bending. In this embodiment, the second container 6 has a second container lid 8 thereon, which seals the second container 6, and the second container lid 8 has a purge inlet/outlet 9 thereon. In another embodiment, the first container 1 and the second container 6 may not necessarily be in the same vertical direction, and the two may be communicated through a bent catheter.
As shown in fig. 2, the catheter 10 is provided with a sealing plug 11, and the sealing plug 11 is sealed at the first container port 4; the first container mouth 4 is a frosted mouth with frosted inner ring, and the sealing plug 11 is a frosted plug with frosted outer ring. In one embodiment the second container 6, the vent 7, and the catheter 10, the sanding plug are integrally formed with a sanding plug outer collar having sanding. The frosted opening of the first container 1 and the frosted plug of the second container 6 are clamped, and the first clamp connection part 3 and the second clamp connection part 5 can be connected through the clamp, so that the connection of the first container 1 and the second container 6 is more fastened, and the air leakage and the disconnection of the connection part of the first container 1 and the second container 6 caused by air inlet and air exhaust are avoided.
The thin film formation apparatus further comprises a substrate holder disposed within the second container 6. In one embodiment, as shown in fig. 1 and 2, the substrate to be thin film deposited is placed horizontally in the substrate support, in this embodiment a silicon oxide wafer is used as the substrate, and in other embodiments other types of insulating materials are provided on the substrate, and the insulating material may be glass, polymer, yttria, hafnium oxide, or alumina. The substrate holder comprises a horizontal tray 12 and at least three legs 14 uniformly arranged along the periphery of the horizontal tray 12, the upper surfaces of the three legs 14 being 1-5mm higher than the upper surface of the support base 13, preferably 3mm in this embodiment, and the lower surfaces of the legs 14 being 1-5mm lower than the lower surface of the support base 13, preferably 2mm in this embodiment. The diameter of the support base 13 is determined according to the diameter of the substrate, in this embodiment the diameter is 100mm-200mm, and the thickness of the support base 13 is sufficient to meet the requirement of mechanical strength, in this embodiment the thickness is 2mm. The substrate is placed on the support base 13 and three legs 14 are provided to clamp the substrate against sliding in the horizontal direction. The tray 12 is placed inside the second container 6, and the legs 14 of the tray 12 are in contact with the inner wall of the second container 6, such that a gap exists between the tray 12 and the inner wall of the second container 6, facilitating the flow of solution or air under the tray. The tray 12 may be separated from the bottom of the second container 6 to facilitate cleaning of the tray and the second container. In another embodiment, the tray 12 may also be fixed to the bottom of the second container 6.
Further, the embodiment of the invention also comprises a gas control device, wherein the gas control device comprises an electric control box, an upper computer, a pressurizing gas circuit and a pressure relief gas circuit. One end of the pressurizing air channel is connected with the main air inlet pipeline, a pressurizing air channel needle valve, a pressurizing air channel pneumatic diaphragm valve and a pressurizing air channel one-way valve are sequentially connected with the pressurizing air channel needle valve, and the other end of the pressurizing air channel pneumatic diaphragm valve is connected with the air port of the first container; one end of the pressure relief air passage is connected with a pressure relief air discharge pipeline, a pressure relief air passage needle valve, a pressure relief pneumatic diaphragm valve and a pressure relief air passage one-way valve are sequentially connected, and the other end of the pressure relief air passage is connected with the air port of the first container.
In another embodiment, a bypass with one cleaning solvent may be provided at the same time. When the device needs to be cleaned, the device can be switched to another tank filled with cleaning agent, and the cleaning agent is introduced to clean the device. After the cleaning is completed, the solvent tank for depositing the film is switched. As shown in fig. 3, a cleaning vessel 1 'containing a cleaning solution having the same composition as the solvent in the first vessel is provided next to the first vessel 1, and the first vessel 1 and the cleaning vessel 1' and the second vessel 6 are connected to each other via a valve 15 and a catheter 16. In this embodiment, the catheter between the first container 1 and the second container 6 may be bent so that the first container 1 and the second container 6 are not in the vertical direction, which is more convenient to flexibly adapt to the space. In another embodiment, the first container 1 and the second container 6 may be in a vertical direction, with the catheter therebetween being a straight tube. Wherein the second container is in a closed environment to achieve a saturated vapor pressure of the solution, pressurizing to submerge the substrate, and maintaining the submerged state for 2 seconds to 30 minutes, preferably 10 seconds to 30 seconds. Then, the pressure is released, the solution is quickly refluxed to the first container 1, the surface of the substrate is covered with the residual solution, the residual solution is kept in a saturated steam environment for 2 seconds to 30 minutes, preferably 10 seconds to 180 seconds, then the three-way valve 21 is used for performing gas path control, the cleaning container 1 '(cleaning solution) is pressurized and immersed in the substrate, the immersed state is kept for 2 seconds to 30 minutes, preferably 10 seconds to 60 seconds, then the pressure is released, the solution is quickly refluxed to the first container 1', the substrate is exposed, and the solution on the surface of the substrate is quickly volatilized through nitrogen purging. Therefore, the method can realize the deposition and the cleaning at the same time, and improves the cleanliness and the preparation efficiency of the film.
The thin film preparation device of the embodiment realizes the lifting effect by arranging the first container 1 and the second container 6 which are mutually communicated and controlling the rising and the falling of the liquid level of the solution through the air pressure, and the substrate is kept fixed without lifting movement, so that impurity ions are prevented from being introduced by the movement of the clamp for clamping the substrate, the vibration of the substrate caused by the lifting movement of the clamp is avoided, and the thin film with good consistency is formed. In addition, the thin film preparation device of the embodiment is contacted with dust particles as little as possible in the process of forming the thin film, so that the quality of the thin film is improved.
In another embodiment of the present invention, a method for preparing a thin film using the thin film preparation apparatus is also provided, which specifically includes the steps of first introducing a thin film solution, in which carbon nanotubes are dispersed in toluene, o-xylene, chloroform, one or more halogenated hydrocarbons, preferably toluene, chloroform, dichloroethane, trichloroethane, chlorobenzene, dichlorobenzene, bromobenzene, etc., into a first container. Wherein the carbon nanotubes are selected from single-walled carbon nanotubes, double-walled carbon nanotubes or multi-walled carbon nanotubes. Then placing at least one substrate on the substrate support, and placing the substrate support in a second container, wherein the substrate is a silicon oxide wafer in the embodiment, and glass, metal or plastic in other embodiments; the pressurizing air channel is controlled to be conducted and the pressure releasing air channel is controlled to be closed through the air control device, the pressurizing air channel is used for ventilating and pressurizing the first container through the air port, and the film solution in the first container is pressed into the second container through the liquid guide tube until the substrate is immersed; then, the pressurizing air channel is controlled to be closed and the pressure relief air channel is controlled to be conducted through the air control device, air in the first container is discharged from the pressure relief air channel through the air port, the pressure relief speed of the pressure relief air channel is controlled to enable the film solution in the second container to slowly descend or rapidly descend, the film solution flows back to the first container and completely exposes the substrate, nitrogen or compressed air is introduced into the purging air channel to purge the substrate, so that the adhesion solution on the surface of the substrate is rapidly volatilized, and no solution remains on the surface of the substrate. Repeating the above process for several times to prepare the film.
In this embodiment, the film solution in the second container 6 is hydraulically returned to the first container 1 by means of air pressure, and specifically, the film solution may be communicated with the second container 6 by means of an air pressure device, and after the air in the first container 1 is depressurized, the air pressure device is controlled to pressurize the second container 6 to hydraulically return the film solution to the first container 1. This method requires an additional air pressure device, but is not required for the installation of the first container 1 and the second container 6, and is not limited to the installation site.
In another embodiment, by the positional relationship between the first container 1 and the second container 6, the thin film solution is returned to the first container 1 by gravity, and specifically, referring to fig. 1 to 2 of the present embodiment, the second container 6 is disposed above the first container 1, and after the gas in the first container 1 is depressurized, the thin film solution in the second container 6 is returned to the first container 1 by gravity.
In another embodiment, the substrate is purged by passing nitrogen or compressed air through a purge gas path after exposing the substrate. Through purging to the second container, can let the solution that remains on the substrate surface volatilize fast, shorten the process time of film preparation, promote production efficiency.
In summary, the thin preparation device of the invention realizes the lifting effect by controlling the rising and falling of the solution liquid level by the air pressure, the substrate keeps fixed without carrying out lifting movement, on one hand, no mechanical vibration is generated, the interference of vibration on film formation, especially the interference of the thin film in the parallel direction, and on the other hand, the impurity ions are prevented from being introduced by the movement of the clamp for clamping the substrate, thereby being beneficial to forming the thin film with good surface consistency; meanwhile, the film preparation device disclosed by the invention is contacted with dust particles as little as possible in the film forming process, and no metal material exists in the whole device, so that the film is prevented from being polluted by particle impurities and metal ions. The device is clean and low in cost. In addition, the device can simultaneously place a plurality of substrates, realizes batch preparation, greatly improves the film-making efficiency, can prepare the high-quality high-uniformity carbon nanotube film, is combined with wet etching and cleaning processes, and has wide application prospect in the carbon-based integrated circuit process.
The above embodiments are only for illustrating the present invention and not for limiting the technical solutions described in the present invention, and although the present invention has been described in detail in the present specification with reference to the above embodiments, the present invention is not limited to the above specific embodiments, and thus any modifications or equivalent substitutions are made to the present invention; all technical solutions and modifications thereof that do not depart from the spirit and scope of the invention are intended to be included in the scope of the appended claims.
Claims (9)
1. A thin film formation apparatus, comprising:
a first container (1) for holding a film solution, the first container (1) having a gas port (2) and a first container port (4) communicating with the inside;
the second container (6), the said second container (6) locates above said first container (1) and communicates with said first container (1) through the liquid guiding tube (10), there are sealing plugs (11) on the said liquid guiding tube (10), the said sealing plug (11) is blocked in the said first container mouth (4);
the second container (6) has a second container cover (8) thereon, and a substrate support disposed within the second container (6).
2. A film forming apparatus according to claim 1, wherein said liquid guide tube extends into the bottom of said first container (1) and is spaced from the bottom wall of the first container (1) by a distance of between 1 and 10 mm;
the first container mouth (4) is a frosted mouth with frosted inner ring, and the sealing plug (11) is a frosted plug with frosted outer ring.
3. A film forming apparatus according to claim 1, wherein said substrate holder comprises a horizontal tray (12) and at least 3 legs (14) uniformly arranged along the outer periphery of said horizontal tray (12).
4. A thin film production apparatus according to any one of claims 1 to 3, characterized by having a cleaning vessel (1 ') in communication with the first vessel (1) and the second vessel (6), wherein a three-way valve (21) is provided between the first vessel (1), the second vessel (6) and the cleaning vessel (1').
5. A thin film formation apparatus according to claim 1, wherein an electric field or magnetic field generating means for applying an electric field or magnetic field during the thin film formation is provided outside the thin film formation apparatus.
6. The thin film formation apparatus according to claim 1, further comprising a gas control device including an electrical control box, an upper computer, a pressurizing gas path, and a depressurizing gas path.
Further, one end of the pressurizing air passage is connected with a main air inlet pipeline, a pressurizing air passage needle valve, a pressurizing air passage pneumatic diaphragm valve and a pressurizing air passage one-way valve are sequentially connected, and the other end of the pressurizing air passage is connected with the air port of the first container;
one end of the pressure relief air channel is connected with a pressure relief air discharge pipeline, a pressure relief air channel needle valve, a pressure relief pneumatic diaphragm valve and a pressure relief air channel one-way valve are sequentially connected, and the other end of the pressure relief air channel is connected with the air port of the first container.
7. A method for producing a thin film by using the thin film production apparatus according to any one of claims 1 to 6, comprising the steps of:
introducing the film solution into a first container (1);
placing at least one substrate on a substrate holder and placing the substrate holder in a second container (6);
the pressurizing air passage is controlled to be conducted and the pressure releasing air passage is controlled to be closed by the air control device, the pressurizing air passage is used for ventilating and pressurizing the first container (1) through the air opening, and the film solution in the first container (1) is pressed into the second container through the liquid guide tube until the substrate is immersed;
the pressurizing air channel is controlled to be closed and the pressure relief air channel is controlled to be conducted through the air control device, air in the first container (1) is discharged from the pressure relief air channel through the air port, the pressure relief speed of the pressure relief air channel is controlled to enable the film solution in the second container (6) to descend and flow back to the first container, the substrate is completely exposed, and nitrogen or compressed air is introduced through the purging air channel to purge the surface of the substrate, so that no solution remains on the surface; the process is repeated for a plurality of times, the film preparation is completed, and the control of the film density can be realized by controlling the repetition times.
8. A method of preparing a film according to claim 7, characterized in that the substrate is immersed in the film solution in the second container for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes, and then the pressure release speed of the pressure release gas path is controlled so that the film solution in the second container (6) is rapidly lowered, and after the film solution is lowered to expose the substrate, the film solution is kept under the solvent atmosphere formed by the volatilization of the solvent for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes;
pressurizing the cleaning vessel to allow the cleaning solution to enter the second vessel (6) and submerge the substrate for 3 seconds to 10 minutes, preferably 10 seconds to 2 minutes;
controlling the pressure relief gas circuit to enable the cleaning solution in the second container (6) to flow back to the cleaning container, and increasing the pressure or nitrogen purging to enable the surface of the substrate to be dried; and then pressurizing to enable the film solution in the first container to enter the second container, immersing the substrate, and repeating the process to finish film preparation.
9. The method of preparing a thin film according to claims 7 and 8, wherein the thin film solution is a carbon nanotube solution, and the substrate surface has an insulating material selected from the group consisting of silicon oxide, glass, polymer, yttrium oxide, hafnium oxide, and aluminum oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210057851.4A CN116493185A (en) | 2022-01-19 | 2022-01-19 | Film preparation device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210057851.4A CN116493185A (en) | 2022-01-19 | 2022-01-19 | Film preparation device and method |
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| Publication Number | Publication Date |
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| CN116493185A true CN116493185A (en) | 2023-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202210057851.4A Pending CN116493185A (en) | 2022-01-19 | 2022-01-19 | Film preparation device and method |
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| Country | Link |
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| CN (1) | CN116493185A (en) |
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2022
- 2022-01-19 CN CN202210057851.4A patent/CN116493185A/en active Pending
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