CN116477631A - Polycrystalline silicon slag slurry recovery system - Google Patents
Polycrystalline silicon slag slurry recovery system Download PDFInfo
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- CN116477631A CN116477631A CN202310354502.3A CN202310354502A CN116477631A CN 116477631 A CN116477631 A CN 116477631A CN 202310354502 A CN202310354502 A CN 202310354502A CN 116477631 A CN116477631 A CN 116477631A
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- 239000002002 slurry Substances 0.000 title claims abstract description 47
- 239000002893 slag Substances 0.000 title claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 20
- 238000011084 recovery Methods 0.000 title abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 66
- 239000000706 filtrate Substances 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 19
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000012535 impurity Substances 0.000 claims abstract description 16
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 12
- 239000002910 solid waste Substances 0.000 claims abstract description 9
- 238000007599 discharging Methods 0.000 claims abstract description 7
- 238000001914 filtration Methods 0.000 claims abstract description 7
- 239000012071 phase Substances 0.000 claims description 29
- 239000007791 liquid phase Substances 0.000 claims description 24
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 20
- 239000005049 silicon tetrachloride Substances 0.000 claims description 20
- 238000009835 boiling Methods 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011863 silicon-based powder Substances 0.000 claims description 6
- 230000007062 hydrolysis Effects 0.000 claims description 5
- 238000006460 hydrolysis reaction Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004321 preservation Methods 0.000 claims description 4
- XENVCRGQTABGKY-ZHACJKMWSA-N chlorohydrin Chemical compound CC#CC#CC#CC#C\C=C\C(Cl)CO XENVCRGQTABGKY-ZHACJKMWSA-N 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 239000007790 solid phase Substances 0.000 claims description 3
- 230000003301 hydrolyzing effect Effects 0.000 claims description 2
- 239000005046 Chlorosilane Substances 0.000 abstract description 14
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 abstract description 14
- 238000000034 method Methods 0.000 abstract description 9
- 238000004064 recycling Methods 0.000 abstract description 7
- 239000002699 waste material Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 11
- 239000007788 liquid Substances 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 238000007038 hydrochlorination reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 210000004400 mucous membrane Anatomy 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 210000002345 respiratory system Anatomy 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 210000003491 skin Anatomy 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/10778—Purification
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a crystalline silicon slag slurry recovery system, which comprises: the storage tank, the filter, the first rectifying tower and the dryer are connected in sequence; wherein the storage tank is also connected with the dryer; the dryer is also connected with the filter; the storage tank is used for carrying out pressurization treatment on the to-be-treated chlorohydric slag slurry; the filter is used for filtering the pressurized chlorohydrination slag slurry to obtain filtrate and residual slurry; the first rectifying tower is used for rectifying the filtrate to obtain trichlorosilane; and the dryer is used for drying the residual slurry, condensing gas-phase materials generated by drying, then transmitting the condensed gas-phase materials to the storage tank, and discharging solid waste residues generated by drying. The system provided by the invention can solve the problems of low recovery rate, resource waste and high metal impurities in the recovered chlorosilane in the existing chlorohydric slag slurry treatment process, realize the full recycling of the chlorosilane, and can recover and purify hexachlorodisilane with high added value.
Description
Technical Field
The invention relates to the field of photovoltaic materials, in particular to a polycrystalline silicon slurry recycling system.
Background
As demand has increased, the photovoltaic industry and the integrated circuit industry have grown rapidly in the last decade. Polysilicon is a core raw material for the photovoltaic industry and the integrated circuit industry, and according to the current development trend, china becomes the biggest polysilicon production country worldwide.
Currently, polysilicon manufacturers almost all adopt an improved Siemens method, and a large amount of chlorosilane residual liquid is generated in the process of producing polysilicon by the improved Siemens method. Chlorosilane raffinate has strong corrosiveness and is extremely easy to hydrolyze to generate a large amount of hydrogen chloride gas, if the chlorosilane raffinate contacts a human body, the chlorosilane raffinate can cause serious damage to respiratory tracts, mucous membranes and skin, and the chlorosilane raffinate is discharged to the environment, so that surrounding soil, atmosphere, water source and the like can be damaged. A certain amount of slag slurry is generated in a chlorohydrogenation section of polysilicon production, and mainly comprises chlorosilane, silicon powder, metal chloride and the like; the handling and utilization of slag slurries is a problem that the polysilicon industry must face. At present, the treatment process of the slag slurry in the chlorination-hydrogenation section is mainly divided into two types, one type is that the partial slag slurry is subjected to rough hydrolysis treatment, so that a large amount of chlorosilane materials are wasted, and the environment is polluted; the other is that part of the materials are sent to a vacuum drum filter, the adsorption layer formed by mixing diatomite and chlorosilane is used for solid-liquid separation, the separated solid phase is sent to a hydrolysis system for treatment after simple treatment, and the liquid phase is further purified and recycled, so that the method has high control precision requirement, the adsorption layer is easy to fall off, the running time of the device is short, the overhaul frequency is high, great potential safety hazards exist, and meanwhile, the workload of personnel is increased; the device has poor filtering and adsorbing effects and low recovery rate, and high added value components in the slag slurry are not separated, so that serious resource waste is caused.
Disclosure of Invention
The present invention aims to solve, at least to some extent, one of the technical problems in the above-described technology. Therefore, the invention provides a polysilicon slag slurry recovery system, which comprises:
the storage tank, the filter, the first rectifying tower and the dryer are connected in sequence; wherein the storage tank is also connected with the dryer; the dryer is also connected with the filter;
the storage tank is used for carrying out pressurization treatment on the to-be-treated chlorohydric slag slurry;
the filter is used for filtering the pressurized chlorohydrination slag slurry to obtain filtrate and residual slurry;
the first rectifying tower is used for rectifying the filtrate to obtain trichlorosilane;
and the dryer is used for drying the residual slurry, condensing gas-phase materials generated by drying, then transmitting the condensed gas-phase materials to the storage tank, and discharging solid waste residues generated by drying.
Preferably, the polysilicon slurry recycling system further comprises:
the separator, the heat exchanger and the second rectifying tower; the separator is arranged between the first rectifying tower and the dryer, and is also connected with the heat exchanger; the heat exchanger is arranged between the filter and the first rectifying tower; the second rectifying tower is connected with a liquid-phase material outlet of the heat exchanger;
the separator is used for carrying out flash evaporation on liquid-phase high-boiling materials from the tower bottom of the first rectifying tower; the components of the high-boiling material comprise hexachlorodisilane and silicon tetrachloride;
the heat exchanger is used for transmitting the filtrate from the filter to the first rectifying tower, and exchanging heat between the gas-phase material produced by the separator and the filtrate to condense the gas-phase material produced by the separator into liquid-phase material;
and the second rectifying tower is used for rectifying the liquid-phase material to obtain gaseous silicon tetrachloride and liquid-phase hexachlorodisilane.
Preferably, a buffer tank is further arranged between the second rectifying tower and the liquid-phase material outlet of the heat exchanger; the buffer tank is used for storing and pressurizing the liquid-phase materials.
Preferably, the separator is further used for filtering solid-phase impurities in the high-boiling material.
Preferably, the separator is further used for conveying impurities separated from the high-boiling materials to the dryer for drying; the dryer is also used for condensing gas-phase materials generated by drying the impurities and then transmitting the gas-phase materials to the storage tank, and discharging solid waste residues generated by drying the impurities.
Preferably, the solid waste discharging port of the dryer is further provided with a hydrolysis device for hydrolyzing the solid waste.
Preferably, the separator flashes the high-boiling material after the liquid level of the high-boiling material reaches a preset range.
Preferably, the first rectifying tower is further used for rectifying the filtrate to obtain gaseous silicon tetrachloride; the gas phase trichlorosilane generated by rectifying the filtrate in the first rectifying tower is discharged from the top of the tower; and gas-phase silicon tetrachloride generated by rectifying the filtrate in the first rectifying tower is discharged through the tower body side.
Preferably, the filter is a scraper filter; and a heat preservation device is arranged outside the storage tank.
Preferably, the components of the hydrochlorination slag slurry comprise: trichlorosilane, silicon tetrachloride, hexachlorodisilane, silicon powder and impurities.
Compared with the prior art, the invention has the beneficial effects that: 1. solves the problems of lower recovery rate, resource waste and high metal impurities in the recovered chlorosilane in the existing chlorohydric slag slurry treatment process, avoids environmental pollution and realizes the full recycling of the chlorosilane; 2. the hexachlorodisilane with high added value is recovered and purified, and the project income is increased.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a polysilicon slurry reclamation system;
FIG. 2 is a schematic diagram of another polysilicon slurry recovery system;
reference numerals: 10. a storage tank; 20. a filter; 30. a heat exchanger; 40. a first rectifying column; 50. a separator; 60. a second rectifying column; 70. a dryer; 80. a first condenser; 90. a second condenser; 100. a buffer tank; 110. and a third condenser.
Detailed Description
The preferred embodiments of the present invention will be described below with reference to the accompanying drawings, it being understood that the preferred embodiments described herein are for illustration and explanation of the present invention only, and are not intended to limit the present invention.
As shown in fig. 1, the present invention provides a polycrystalline silicon slurry recycling system, comprising: the storage tank 10, the filter 20, the first rectifying tower 40 and the dryer 70 are connected in sequence; wherein the tank 10 is connected to the dryer 70, and the filter 20 is also connected to the dryer 70;
a tank 10 for pressurizing the hydroslag slurry to be treated;
a filter 20 for filtering the pressurized chlorohydrin slurry to obtain a filtrate and a residual slurry;
a first rectifying tower 40 for rectifying the filtrate to obtain trichlorosilane;
and a dryer 70 for drying the residual slurry, condensing the gas phase material generated by the drying, transferring the condensed gas phase material to the storage tank 10, and discharging the solid waste residue generated by the drying.
As shown in fig. 1, the polysilicon slurry recycling system provided by the invention further comprises: a separator 50, a heat exchanger 30, a second rectifying column 60; wherein, the separator 50 is arranged between the first rectifying tower 40 and the dryer 70 and is also connected with the heat exchanger 30; the heat exchanger 30 is disposed between the filter 20 and the first rectifying column 40; the second rectifying tower 60 is connected with a liquid phase material outlet of the heat exchanger 30;
a separator 50 for flash evaporating the liquid phase high boiling material from the bottom of the first rectifying column 40; the components of the high-boiling material comprise hexachlorodisilane and silicon tetrachloride;
the separator 50 is used for transmitting the filtrate from the storage tank 10 to the first rectifying tower 40, and exchanging heat between the gas-phase material produced by the separator 50 and the filtrate to condense the gas-phase material produced by the separator 50 into liquid-phase material;
and the second rectifying tower 60 is used for rectifying the liquid-phase material and outputting the rectified silicon tetrachloride to obtain gas phase and liquid phase hexachlorodisilane.
As shown in fig. 1, a buffer tank 100 is further disposed between the second rectifying tower 60 and the liquid phase material outlet of the heat exchanger 30 in the polysilicon slurry recovery system according to the present invention. The buffer tank 100 is used for storing and pressurizing liquid phase materials.
According to some embodiments of the invention, the recovery system workflow presented by the invention is:
1. the hydrochlorination slag slurry S1 is conveyed to the storage tank 10 through pressure difference, and a heat preservation device (including but not limited to electric tracing, a heat preservation layer and the like) is arranged outside the storage tank 10 so as to prevent the slag slurry from being too low in temperature and poor in fluxion, so that a pipeline is blocked; in the embodiment, the content ratio of each component in the chlorohydrin slurry is as follows: 18% of trichlorosilane, 74.5% of silicon tetrachloride, 3.5% of hexachlorodisilane, 3.5% of silicon powder and 0.5% of other impurities.
2. The slurry S2 after the pressurization of the tank 10 is sent to the scraper filter 20 to be filtered, and a filtrate S3 and a residual slurry S4 are obtained. The filtered residual slurry S4 is sent to a dryer 70 for further treatment, and the filtrate S3 is sent to an intermediate heat exchanger 30 for preheating. In the embodiment, the slag slurry enters a scraper filter, silicon powder and impurities with larger viscosity are accumulated on a built-in stainless steel net, when the pressure difference reaches a set value, a scraper is started to rotationally scrape, a drain switch is opened after a certain time to discharge the residual slurry, and the removal rate of the silicon powder and other solid impurities is about 92%.
3. The filtrate S3 is sent to a heat exchanger 30 to exchange heat with a gas phase material S9 generated by flash evaporation of a separator 50, and is sent to a first rectifying tower 40 after heat exchange.
4. The material S5 after heat exchange is sent to a first rectifying tower 40 for preliminary separation, trichlorosilane S6 distilled from the tower top is sent to an existing polysilicon device for use, and silicon tetrachloride S7 adopted from the side of the tower body is cooled by a first condenser 80 and then sent to the existing polysilicon device for use; the high-boiling materials S8 such as hexachlorodisilane and the like extracted from the tower bottom are sent to the separator 50 for further treatment. In this example, the number of trays in the rectifying column 40 was 60, and the number of feed trays was 25 and the number of side-draw trays was 50. The temperature at the top of the rectifying tower 40 is 37 ℃, the pressure at the top of the rectifying tower is 0.02MpaG, the temperature at the bottom of the rectifying tower is 122 ℃, the pressure drop of the rectifying tower is 0.015Mpa, the operation reflux ratio of the rectifying tower is 6, and the side-produced silicon tetrachloride S6 is gas phase. In this example, the purity of trichlorosilane distilled off from the top of the tower was 99.6%, and the purity of silicon tetrachloride taken from the side of the tower was 99%.
5. The high-boiling material S8 including hexachlorodisilane and a small amount of silicon tetrachloride which are output from the tower bottom of the first fractionating tower enter a separator 50 for secondary separation. The top of the separator 50 is provided with a gas phase material S9 which is sent to the intermediate heat exchanger 30 to be condensed with the material S3, and the condensed material S11 is a liquid phase; the liquid phase S10 exiting the bottom of separator 50 is sent to dryer 70 for further processing. In this embodiment, a stirrer is disposed inside the separator 50, the working pressure of the separator 50 is 0.005MpaG, the working temperature is 210-240 ℃, a liquid level detection device is disposed inside the separator 50, and the separator 50 flashes the high-boiling material when the liquid level of the high-boiling material in the separator 50 reaches a certain range.
6. The material S11 condensed by the intermediate heat exchanger 30 is sent to the buffer tank 100, pressurized and sent to the second rectifying tower 60 for separation and purification again, the silicon tetrachloride S12 extracted from the top of the second rectifying tower is sent to the existing polysilicon device for use, and the hexachlorodisilane S13 extracted from the bottom of the second rectifying tower is filled and sold. In this example, the number of trays of the second rectifying column 60 was 20, wherein the number of feed trays was 10, the temperature at the top of the column was 62 ℃, the pressure at the top of the column was 0.015MpaG, the temperature at the bottom of the column was 153 ℃, the pressure drop at the bottom of the column was 0.01MPa, the reflux ratio of the rectifying column was 1, the purity of the tetrachlorosilane distilled off at the top of the column was 99.99% and the purity of the hexachlorodisilane recovered at the bottom of the column was 99.9%.
7. The residual slurry S4 and S10 obtained by filtering through the scraper filter 20 is sent to a dryer 70 for further drying treatment, the gas phase material generated by the process is cooled by a second condenser 90 and then sent to a storage tank 10, and the solid waste residue S15 is sent to a hydrolysis system for treatment.
According to other embodiments of the present invention, as shown in fig. 2, by varying the operating temperature of the first rectification column 40, it is possible to achieve distillation of trichlorosilane S6 only at the top of the first rectification column 40 without side-sampling silicon tetrachloride S7. In the above case, the high-boiling material S8 contains a large amount of hexachlorodisilane and a large amount of silicon tetrachloride, and enters the separator 50 to be flashed, and a large amount of gas-phase material is obtained and enters the intermediate heat exchanger 30 to be condensed. Because the condensation capacity of the intermediate heat exchanger 30 is limited, a third condenser 110 is added at the outlet of the material S11 to perform secondary condensation on the gas phase material which is not completely condensed, so as to ensure sufficient condensation of the gas phase material, and the user can select the structure of the first rectifying tower 40 according to the requirement.
The beneficial effects of the above technical scheme lie in: 1. solves the problems of lower recovery rate, resource waste and high metal impurities in the recovered chlorosilane in the existing chlorohydric slag slurry treatment process, avoids environmental pollution and realizes the full recycling of the chlorosilane; 2. the hexachlorodisilane with high added value is recovered and purified, and the project income is increased.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A polysilicon slurry reclamation system, comprising:
the storage tank, the filter, the first rectifying tower and the dryer are connected in sequence; wherein the storage tank is also connected with the dryer; the dryer is also connected with the filter;
the storage tank is used for carrying out pressurization treatment on the to-be-treated chlorohydric slag slurry;
the filter is used for filtering the pressurized chlorohydrination slag slurry to obtain filtrate and residual slurry;
the first rectifying tower is used for rectifying the filtrate to obtain trichlorosilane;
and the dryer is used for drying the residual slurry, condensing gas-phase materials generated by drying, then transmitting the condensed gas-phase materials to the storage tank, and discharging solid waste residues generated by drying.
2. The system as recited in claim 1, further comprising:
the separator, the heat exchanger and the second rectifying tower; the separator is arranged between the first rectifying tower and the dryer, and is also connected with the heat exchanger; the heat exchanger is arranged between the filter and the first rectifying tower; the second rectifying tower is connected with a liquid-phase material outlet of the heat exchanger;
the separator is used for carrying out flash evaporation on liquid-phase high-boiling materials from the tower bottom of the first rectifying tower; the components of the high-boiling material comprise hexachlorodisilane and silicon tetrachloride;
the heat exchanger is used for transmitting the filtrate from the filter to the first rectifying tower, and exchanging heat between the gas-phase material produced by the separator and the filtrate to condense the gas-phase material produced by the separator into liquid-phase material;
and the second rectifying tower is used for rectifying the liquid-phase material to obtain gaseous silicon tetrachloride and liquid-phase hexachlorodisilane.
3. The system of claim 2, wherein a buffer tank is further provided between the second rectifying column and the liquid phase material outlet of the heat exchanger; the buffer tank is used for storing and pressurizing the liquid-phase materials.
4. The system of claim 2, wherein the separator is further configured to filter solid phase impurities in the high boiling material.
5. The system of claim 4, wherein the separator is further configured to transfer impurities separated from the high boiling material to the dryer for drying; the dryer is also used for condensing gas-phase materials generated by drying the impurities and then transmitting the gas-phase materials to the storage tank, and discharging solid waste residues generated by drying the impurities.
6. The system of claim 5, wherein the solids discharge port of the dryer is further provided with a hydrolysis device for hydrolyzing the solids.
7. The system of claim 2, wherein the separator flashes the high-boiling material after the level of the high-boiling material reaches a predetermined range.
8. The system of claim 1, wherein the first rectification column is further configured to rectify the filtrate to obtain silicon tetrachloride in a gas phase; the gas phase trichlorosilane generated by rectifying the filtrate in the first rectifying tower is discharged from the top of the tower; and gas-phase silicon tetrachloride generated by rectifying the filtrate in the first rectifying tower is discharged through the tower body side.
9. The system of claim 1, wherein the filter is a doctor blade filter; and a heat preservation device is arranged outside the storage tank.
10. The system of claim 1, wherein the components of the chlorohydrin slurry comprise: trichlorosilane, silicon tetrachloride, hexachlorodisilane, silicon powder and impurities.
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| CN202310354502.3A CN116477631A (en) | 2023-04-04 | 2023-04-04 | Polycrystalline silicon slag slurry recovery system |
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| CN202310354502.3A CN116477631A (en) | 2023-04-04 | 2023-04-04 | Polycrystalline silicon slag slurry recovery system |
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| CN103112859A (en) * | 2013-02-26 | 2013-05-22 | 天津大学 | Device and method for continuous recovery treatment of chlorosilane residual liquid |
| CN104909400A (en) * | 2014-03-13 | 2015-09-16 | 四川瑞能硅材料有限公司 | Treatment system and treatment method of chlorosilane slurry raffinate |
| CN106744983A (en) * | 2016-11-28 | 2017-05-31 | 内蒙古盾安光伏科技有限公司 | The slurry processing system of production of polysilicon |
| CN106966397A (en) * | 2017-04-06 | 2017-07-21 | 洛阳中硅高科技有限公司 | The recovery method of disilicone hexachloride |
| CN110862090A (en) * | 2018-08-28 | 2020-03-06 | 天华化工机械及自动化研究设计院有限公司 | Efficient recovery process system for polycrystalline silicon slag slurry |
| CN112142055A (en) * | 2019-06-28 | 2020-12-29 | 新特能源股份有限公司 | Slag slurry recycling method in cold hydrogenation process and recycling system used in same |
| CN210825446U (en) * | 2019-10-14 | 2020-06-23 | 内蒙古鄂尔多斯多晶硅业有限公司 | Cold hydrogenation slag slurry zero-emission treatment system |
| CN110950342A (en) * | 2019-11-29 | 2020-04-03 | 天华化工机械及自动化研究设计院有限公司 | Polysilicon slag slurry non-hydration treatment process |
| CN115106045A (en) * | 2022-07-26 | 2022-09-27 | 乐山协鑫新能源科技有限公司 | High-boiling treatment system for slag slurry |
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