CN116477560A

CN116477560A - MEMS actuating structure and preparation process flow thereof

Info

Publication number: CN116477560A
Application number: CN202310622653.2A
Authority: CN
Inventors: 孔旭东; 王忠岭; 夏风梁
Original assignee: Liaoning Zhonglan Photoelectric Technology Co Ltd
Current assignee: Liaoning Zhonglan Photoelectric Technology Co Ltd
Priority date: 2023-05-30
Filing date: 2023-05-30
Publication date: 2023-07-25

Abstract

The application provides an MEMS actuating structure and a preparation process flow thereof, and relates to the technical field of micro-electromechanical systems. Wherein, a MEMS actuation structure includes: a fixed part, a moving part and a decoupling beam; the fixed part and the moving part are integrally arranged, the fixed part is arranged on the periphery of the moving part, and a certain gap is formed between the fixed part and the moving part; the moving part comprises an array structure for providing driving force; the decoupling beams are arranged in gaps between the fixed portions and the moving portions, each decoupling beam is provided with at least one corner, each decoupling beam is of a layered structure, conductive circuits are arranged in the decoupling beams, and the conductive circuits conduct the fixed portions with the moving portions. According to the technical scheme, the frame is fewer and is of an integrated structure, the overall structural strength is higher, and later assembly is not needed; the conductive circuit is arranged in the decoupling beam, so that physical collision between the circuits is avoided, damage is reduced, and service life is longer.

Description

MEMS actuating structure and preparation process flow thereof

Technical Field

The present disclosure relates to the field of microelectromechanical systems, and more particularly, to a MEMS actuation structure and a process for manufacturing the same.

Background

With the development of technology, many electronic devices have a camera or video function. The use of these electronic devices is becoming more and more popular and is evolving towards a convenient and light-weight design that provides users with more options. Sensor-Shift (Sensor-Shift) is an optical anti-shake technology for driving an imaging chip to perform anti-shake motion relative to a lens, and when external excitation/interference causes image blurring, an imaging field of view can be maintained by adjusting the position between the imaging chip and the optical lens of a camera, so that a clear image anti-shake effect is better.

MEMS actuation structures typically include micro-motors, electrodes, and sensors, among other components. These components can be fabricated by micro-nano processing techniques and can be integrated on a microchip, thereby achieving miniaturization and integration. MEMS actuation structures have a wide variety of applications, such as biomedical, optical, mechanical control, and the like.

However, the existing MEMS actuating structure is a frame structure with an outer frame and an inner frame added with carriers, the frame structure is more, the number of comb teeth which can be arranged is less, the structure is more complex, and the installation is not easy; in addition, the existing MEMS actuator mostly adopts conductive lines to connect and conduct the fixed part and the moving part, mutual interference and physical collision are easy to occur among the conductive lines, so that an actuating force is unstable, and an anti-shake effect is poor.

Disclosure of Invention

The embodiment of the application aims to provide an MEMS actuating structure and a preparation process flow thereof, so as to solve the problems of more frame structures, difficult installation, fewer comb teeth capable of being arranged, mutual interference between conductive lines, physical collision and the like in the prior art.

In order to solve the technical problems, the embodiment of the application provides the following technical scheme:

a first aspect of the present application provides a MEMS actuation structure comprising: a fixed part, a moving part and a decoupling beam; the fixed part is arranged at the periphery of the moving part, and a certain gap is formed between the fixed part and the moving part; the movable part comprises an array structure for providing driving force; the decoupling beams are arranged in gaps between the fixed parts and the moving parts, the decoupling beams are of layered structures, conductive circuits are arranged in the decoupling beams, and the conductive circuits conduct the fixed parts and the movable parts;

the fixed part, the moving part and the decoupling beam are integrally arranged, one end of the Jie Ouliang is connected with the fixed part, and the other end of the Jie Ouliang is connected with the moving part.

Preferably, in the foregoing MEMS actuating structure, gaps between each layer of decoupling beams are the same, an insulating layer is further disposed in the decoupling beams, and the insulating layer wraps the conductive circuit part, so as to achieve electrical insulation between the conductive circuits, and the conductive circuit and the insulating layer are both abutted against an upper surface of the decoupling beams;

the length of the insulating layer and the length of the conductive line along the Z-axis direction are smaller than the length of the decoupling beam along the Z-axis direction.

Preferably, the fixing portion includes an outer frame, on which an anti-collision structure and a first decoupling beam connecting end are disposed, the anti-collision structure is disposed on an inner side of the outer frame, and the first decoupling beam connecting end is connected and conducted with the first end of the decoupling beam.

Preferably, the aforementioned MEMS actuation structure, wherein the motion portion comprises: an inner frame, a cross frame, an L-shaped frame and an array structure; the inner frame is internally provided with a space, the cross-shaped frame and the array structure are arranged in the space, the array structure is composed of a plurality of arrays, the inner frame is connected with the cross-shaped frame, the space is divided into four subspaces, the arrays are respectively arranged in the four subspaces, an L-shaped frame is arranged between the inner frame and the arrays, and the L-shaped frame is electrically connected with the decoupling beam and the arrays.

Preferably, the MEMS actuating structure, wherein the inner frame comprises two oppositely disposed first plates and two oppositely disposed second plates, the first plates and the second plates are provided with hollowed structures for reducing the mass of the moving part; gaps are reserved at four corners formed between the first plate and the second plate, the first plate is used for fixing an imaging chip, the end part of the cross-shaped frame is connected with the first plate or the second plate, and the first plate and the second plate are electrically connected with the imaging chip.

Preferably, the aforementioned MEMS actuating structure, wherein the L-shaped frame includes a long side, a short side and an L corner, the short side is disposed in a gap reserved by four corners of the first plate and the second plate, one end of the short side is provided with a second decoupling beam connecting end, the second decoupling beam connecting end is connected and conducted with the second end of the decoupling beam, the other end of the short side is connected with the long side and the L corner is formed at the connection position, and the long side is disposed adjacent to the first plate or the second plate and is electrically connected with the array.

Preferably, each of the aforementioned MEMS actuating structures includes a curved portion Qu Liang and a plurality of ridges, two curved portions Qu Liang are respectively disposed in each of the arrays, one ends of the two curved portions Qu Liang are respectively disposed at the L corners and at the ends of the long sides away from the L corners, and the other ends of the two curved portions Qu Liang are disposed on the bridge of the cross frame; the plurality of ridges comprise a plurality of ridges a and a plurality of ridges b, one ends of the ridges a are connected with the long sides of the L-shaped frames, the other ends of the ridges a extend to the bridges of the cross-shaped frames and leave gaps with the bridges, one ends of the ridges b are connected with the bridges of the cross-shaped frames, the other ends of the ridges b extend to the long sides of the L-shaped frames and leave gaps with the long sides, the ridges a and the ridges b are respectively provided with comb tooth rows, the comb tooth rows on the ridges a and the comb tooth rows on the ridges b are staggered and crossed with each other, and the comb tooth rows can conduct electricity and form capacitors for providing driving force;

the Qu Quliang is a layered structure, gaps with the same distance are formed between every two layers, and conductive circuits are arranged in the Qu Quliang and conduct the L-shaped frame with the cross-shaped frame.

Preferably, in the MEMS actuating structure, the ridge a is disposed adjacent to the ridge b, the extending directions of the ridge a and the ridge b are opposite, and the number of the ridge a is N, the number of the ridge b is N-1, or the number of the ridge a is N-1, and the number of the ridge b is N.

Preferably, the MEMS actuation structure described above, wherein the comb teeth array includes a comb teeth array a and a comb teeth array b, the comb teeth array a being disposed on the ridge a and maintained energized or grounded; the comb tooth row b is arranged on the ridge b and keeps grounded or electrified; the comb tooth row a comprises comb teeth a and interdental gaps a, the comb tooth row b comprises comb teeth b and interdental gaps b, the comb teeth a correspond to the interdental gaps b, a part of each comb tooth a stretches into each interdental gap b, the comb teeth b correspond to the interdental gaps a, and a part of each comb tooth b stretches into each interdental gap a.

Preferably, in the MEMS actuating structure, at least one corner is disposed on each decoupling beam, and the decoupling beams are of V-type, N-type or M-type structures.

A second aspect of the present application provides a process for preparing a MEMS actuation structure, the process comprising:

(1) Selecting an insulator silicon wafer; the insulator silicon wafer comprises a basal layer, a structural layer and a buried layer;

(2) Etching a first groove on the structural layer by a deep reactive ion etching process;

(3) Applying a first insulating layer to the exposed surface of the structural layer after etching the first groove in the step (2);

(4) Filling conductive materials into the first grooves in the step (3), and flattening the surfaces of the first grooves to finish the manufacture of all conductive circuits;

(5) Etching a second groove on the structural layer;

(6) Filling insulating materials in the second grooves, and applying a second insulating layer on the surface of the whole structural layer to complete the electrical insulation between the comb teeth and other structures;

(7) Etching away the second insulating layer;

(8) Applying a deposited conductive layer to the surface of the structural layer in step (7);

(9) Etching away part of the deposited conductive layer to complete conduction between the comb teeth and the driving conductive circuit and conduction between the comb teeth and the corresponding signal conductive circuit;

(10) Plating a protective layer on the surface of the step (9), and flattening the surface;

(11) Turning over the insulator silicon wafer processed in the step (10), processing the substrate layer, and etching away the substrate layer corresponding to the patterning;

(12) Etching away the part of the buried layer, which corresponds to the part of the substrate layer etched away in the step (11), so as to finish the processing of the back surface of the MEMS braking structure;

(13) Another piece of silicon is taken as a supporting piece, and the silicon corresponding to the patterning is etched; coating the whole piece with glue;

(14) Bonding the insulator silicon wafer in the step (11) with the support sheet in the step (13);

(15) Etching off the protective layer material corresponding to the pattern;

(16) Etching all the hollowed-out parts in the structure of the step (16);

(17) The buried silicon dioxide is etched away such that the etched portion is separated from the overall structure, forming a MEMS actuation structure as previously described.

Compared with the frame structure of an external fixed frame, an intermediate moving frame and a driving array in the existing MEMS driver, the actuating structure combines the intermediate moving frame and the driving array into a moving part, and is integrally arranged with the fixed part, so that the frame structure is fewer, the overall structural strength is higher, the later assembly is not needed, the installation is more convenient, the structure is more firm, more comb teeth can be arranged, and larger driving force can be generated under the same voltage;

the decoupling beam adopts a layered structure, and the layered structure is convenient for leading out more sensor signal wires; meanwhile, under the condition of ensuring that the soft elastic coefficient is unchanged, the elastic coefficients in the hard direction and the Z direction are multiplied, and unnecessary disturbance in the hard direction and the Z direction is reduced.

The decoupling beams of each layer of the structure are internally provided with the conductive circuits, the fixed part and the moving part can be connected and simultaneously conducted, other additional conductive circuits are omitted, the mutual interference and physical collision between the circuits are reduced, the damage is reduced, the service life is longer, and the structural reliability is higher.

Drawings

The above, as well as additional purposes, features, and advantages of exemplary embodiments of the present application will become readily apparent from the following detailed description when read in conjunction with the accompanying drawings. Several embodiments of the present application are illustrated by way of example and not by way of limitation in the figures of the accompanying drawings, in which like reference numerals refer to similar or corresponding parts and in which:

FIG. 1 schematically illustrates a schematic structural view of a MEMS actuation structure of the present invention;

FIG. 2 schematically illustrates a top view of a MEMS actuation structure in accordance with the present invention;

fig. 3 schematically shows a structural schematic of a fixing portion in the present invention;

fig. 4 schematically shows a schematic structural view of a moving part in the present invention;

FIG. 5 schematically illustrates a schematic structural diagram of a connection of a curve Qu Liang in accordance with the present invention;

FIG. 6 schematically shows a schematic of the structure of an array of the present invention;

fig. 7 schematically shows a schematic structure of a comb teeth array in the present invention;

fig. 8 schematically shows a schematic structural view of a decoupling beam connection according to the present invention;

fig. 9 schematically shows an internal structure of a decoupling beam according to the present invention;

FIG. 10 schematically illustrates an electrical schematic of a first array of the present invention;

FIG. 11 schematically illustrates an electrical schematic of a second array of the present invention;

FIG. 12 schematically illustrates an electrical schematic of a third array in accordance with the present invention;

FIG. 13 schematically illustrates an electrical schematic of a fourth array in accordance with the present invention;

FIG. 14 schematically illustrates a grounded schematic view of the MEMS actuation structure of the present invention;

fig. 15 to 31 schematically illustrate a process flow for preparing the MEMS actuation structure of the present invention.

Reference numerals illustrate:

1 is a fixing part, 11 is an outer frame, 111 is an anti-collision structure, 112 is a first decoupling beam connecting end, and 113 is an avoidance groove; 2 is a moving part, 21 is an inner frame, 211 is a first plate, 212 is a second plate, 22 is a cross frame, 221 is a bridge, 23 is an array structure, 23-1 is a first array, 23-2 is a second array, 23-3 is a third array, 23-4 is a fourth array, 231 is a curve Qu Liang, 232 is a ridge, 232a is a ridge a,232b is a ridge b,233 is a comb tooth row, 233a is a comb tooth row a,233a-1 is a comb tooth a,233a-2 is a tooth gap a,233b is a comb tooth row b,233b-1 is a comb tooth b,233b-2 is a tooth gap b;24 is an L-shaped frame, 241 is a long side, 242 is a short side, 2421 is a second decoupling beam connecting end, 243 is an L corner; 3 is a decoupling beam, 31 is a conductive line, 32 is an insulating layer, 33 is a corner, and 34 is a gap between the decoupling beams; 4 is an insulator silicon wafer, 41 is a structural layer, 411 is a first trench, 412 is a first insulating layer, 413 is a conductive material, 414 is a second trench, 415 is an insulating material, 416 is a second insulating layer, 417 is a conductive layer, 418 is a protective layer, 42 is a buried layer, 43 is a base layer, 431 is a cavity, 432 is a separation trench; 5 is a supporting sheet and 51 is an air groove.

Description of the embodiments

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

It is noted that unless otherwise indicated, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this application belongs.

Examples

As shown in fig. 1 and 2, a first embodiment of the present invention provides a MEMS actuation structure, which is a MEMS actuation structure, including: a fixed part 1, a moving part 2 and a decoupling beam 3; the fixed part 1 is arranged on the periphery of the moving part 2, a certain gap is formed between the fixed part 1 and the moving part 2, and no direct contact point exists between the fixed part and the moving part, and the fixed part 1 and the moving part are integrally arranged to play roles in limiting and fixing; the moving part 2 is provided with an array structure for providing driving force; the decoupling beams 3 are arranged in gaps between the fixed parts 1 and the moving parts 2 and are used for elastically and electrically connecting the fixed parts 1 and the moving parts 2, one ends of the decoupling beams 3 are connected with the fixed parts 1, the other ends of the decoupling beams are connected with the moving parts 2, the decoupling beams 3 are of layered structures, the number of layers is determined according to working condition conditions, the purpose is to increase the surface area of the decoupling beams, the elasticity coefficient (K value) of the decoupling beams can be better adjusted, conductive lines 31 are arranged in each layer of decoupling beams 3, the conductive lines 31 conduct the fixed parts 1 and the moving parts 2, a certain gap is reserved between the decoupling beams 3 and the fixed parts 1 and between the decoupling beams and the moving parts 2, and friction, impact and the like of the decoupling beams 3 and the moving parts 2 and the fixed parts 1 in the moving process are prevented.

As shown in fig. 9, in the implementation, the gaps between the decoupling beams 3 (gaps 34 between the decoupling beams) of each layer are all the same, each layer of decoupling beam 3 is internally provided with a conductive line 31 and an insulating layer 32, the insulating layer 32 partially wraps the conductive line 31 for realizing the electrical insulation between the conductive lines 31, the conductive line 31 and the insulating layer 32 are both abutted against the upper surface of the decoupling beam 3, the conductive line 31 is aimed at conducting connection between the imaging chip and the array structure 23, and the insulating layer 32 is aimed at preventing the mutual crosstalk between the conductive lines 31; the conductive line 31 is a metal conductive line, in fig. 9, a is a length of the conductive line 31 along the Z-axis direction, B is a length of the decoupling beam 3 along the Z-axis direction, and a < B.

As shown in fig. 1 to 3, in a specific implementation, the fixing portion 1 includes an outer frame 11, the outer frame 11 is provided with an anti-collision structure 111 and a first decoupling beam connecting end 112, the first decoupling beam connecting end 112 electrically connects the fixing portion 1 with the decoupling beam 3, the anti-collision structure 111 is disposed at four corners of the inner side of the outer frame 11, or may be disposed at edges of four sides of the outer frame 11, for reducing the impact caused by the collision between the moving portion and the fixing portion, and playing a role of protecting the moving portion, and the first decoupling beam connecting end 112 is used for connecting and conducting the fixing portion 1 with the decoupling beam 3; the four sides of the inner side of the outer frame 11 can be provided with an avoidance groove 113, part of decoupling beams 3 are arranged in the avoidance groove 113, and a first decoupling beam connecting end 112 is arranged in the avoidance groove 113; the outer frame 11 may be any shape, and is preferably a rectangular frame.

As shown in fig. 1, 2 and 4, in the implementation, the moving part 2 includes: an inner frame 21, a cross frame 22, an L-shaped frame 24, and an array structure 23; the inner frame 21 is internally provided with a space, the cross frame 22 and the array structure 23 are arranged in the space, the array structure 23 is divided into a first array 23-1, a second array 23-2, a third array 23-3 and a fourth array 23-4, the four arrays are the same structure, only the arrangement directions are different, the arrangement directions of ridges 232 in the diagonal arrays are the same, and the arrangement directions of ridges 232 in two adjacent arrays along the X, Y axis direction are different, namely the arrangement directions of the first array 23-1 and the third array 23-3 are the same, and the arrangement directions of the second array 23-2 and the fourth array 23-4 are the same; the inner frame 21 is connected with the cross-shaped frame 22, the space is divided into four subspaces, the four subspaces are respectively provided with an array, the L-shaped frame 24 is arranged between the inner frame 21 and the array, and the L-shaped frame 24 is electrically connected with the decoupling beam 3 and the array; wherein the inner frame 21 may be a non-closed frame of any shape, preferably a rectangular non-closed frame.

As shown in fig. 1, 2 and 4, in a specific implementation, the inner frame 21 includes two first plates 211 and two second plates 212 that are oppositely disposed, the first plates 211 and the second plates 212 are both provided with hollow structures for reducing the mass of the moving part 2, the first plates 211 and the second plates 212 may be a wide plate, a narrow plate or four plates that are not wide or narrow, gaps are reserved at four corners formed between the first plates 211 and the second plates 212, a space is formed in a middle portion, a glue dispensing groove is formed in the first plates 211 for fixing glue and fixing an imaging chip, the first plates 211 and the second plates 212 are electrically connected with the imaging chip, the cross frame 22 is disposed in the space, four sides of the cross frame 22 are respectively four bridges 221, and ends of the cross frame 22 are integrally connected with the first plates 211 or the second plates 212 to divide the space into four subspaces.

As shown in fig. 1 and 4, in an embodiment, the L-shaped frame 24 includes a long side 241, a short side 242 and an L corner 243, the short side 242 is disposed in a gap reserved between the four corners of the first plate 211 and the second plate 212, the long side 241 is disposed adjacent to the first plate 211 or the second plate 212 and has a slight gap with the first plate 211 or the second plate 212, one end of the short side 242 is provided with a second decoupling beam connecting end 2421 for connecting and conducting the moving part 2 and the decoupling beam 3, the second decoupling beam connecting end 2421 electrically connects the L-shaped frame 24 and the decoupling beam 3, the other end of the short side 242 is connected with the long side 241 and forms the L corner 243 at the connection position, and the long side 241 is electrically connected with the array.

As shown in fig. 4 to 6, in the embodiment, each array includes a curved portion Qu Liang and a plurality of ridges 232, two curved portions Qu Liang, qu Quliang are respectively disposed between the long side 241 and the bridge 221 of the cross frame 22 in each array, one ends of the two curved portions Qu Liang 231 are respectively disposed at the L corner 243 and the end of the long side 241 away from the L corner 243, and the other ends of the two curved portions Qu Liang 231 are disposed on the bridge 221 of the cross frame 11; the ridges 232 comprise a plurality of ridges a232a and a plurality of ridges b232b, one end of each ridge a232a is connected with the long side 241 of the L-shaped frame 24, the other end of each ridge a232a extends to the bridge 221 of the cross-shaped frame 22 along the X or Y direction, a gap is reserved between each ridge 221 and each bridge 221, one end of each ridge b232b is connected with the bridge of the cross-shaped frame 22, the other end of each ridge b232b extends to the long side 241 of the L-shaped frame 24 along the X or Y direction, a gap is reserved between each ridge a232a and each ridge b232b, comb tooth columns 233 are respectively arranged between each ridge a232a and each ridge b232b, the comb tooth columns 233 on each ridge a232a and the comb tooth columns 233 on each ridge b232b are staggered and cross each other, the comb tooth columns 233 can conduct electricity and form a capacitor to provide driving force, the extending directions of two adjacent ridges 232 are different, the number of the ridges a232 b is N, the number of the ridges b232 a is N-1, the number of the adjacent ridges a232a and the number of the ridges b232b is N between the adjacent ridges 232a and the ridges 232b are arranged, and the comb tooth columns 233 are used for conducting the selection according to the working conditions;

wherein, the curves Qu Liang and 231 are layered structures, gaps with the same distance are formed between each two layers, the conductive lines 31 are arranged in each layer of the curves Qu Liang and 31 conduct the L-shaped frame 24 and the cross-shaped frame 22, the purpose of the curves Qu Quliang and 231 is to increase the surface area of the decoupling beam 3, and the elasticity coefficient (K value) of the decoupling beam 3 can be better adjusted.

As shown in fig. 4, 6 and 7, in the embodiment, the comb teeth row 233 includes a comb teeth row a233a and a comb teeth row b233b, the comb teeth row a233a is disposed on a ridge a232a extending from the long side 241 of the L-shaped frame 24 to the bridge 221 of the cross-shaped frame 22 and is kept energized, the comb teeth row b233b is disposed on a ridge b242b extending from the bridge 221 of the cross-shaped frame 22 to the long side 241 of the L-shaped frame 24 and is kept grounded, and an electric signal is transmitted when grounded as shown in fig. 14; the comb tooth row a233a includes comb teeth a233a-1 and interdental spaces a233a-2, the comb tooth row b233b includes comb teeth b233b-1 and interdental spaces b233b-2, the comb teeth a233a-1 correspond to the interdental spaces b233b-2 and each comb tooth a233a-1 has a portion extending into the interdental spaces b233b-2, the comb teeth b233b-1 correspond to the interdental spaces a233a-2 and each comb tooth b233b-1 has a portion extending into the interdental spaces a233 a-2.

As shown in fig. 1 and 8, in a specific implementation, at least one corner 33 is provided on each decoupling beam 3, and the decoupling beams may have a V-type structure, an N-type structure, an M-type structure, or other structures, preferably an N-type structure.

The number of the decoupling beams 3, the L-shaped frames 24 and the number of the arrays are all the same, and the number of the decoupling beams is four.

The working principle and the working mode of the invention

The first is anti-shake linear displacement along the X, Y axis direction; the second is the anti-shake of rotational displacement with the Z-axis as the axis of rotation, as shown in fig. 1-14.

1. The anti-shake device is linearly displaced along the X, Y axis direction, the X-axis direction movement is completed by the first array and the third array together, and the Y-axis direction movement is completed by the second array and the fourth array together.

(1) The external electric signal is transmitted to the L-shaped frame through the decoupling beam, then the L-shaped frame is respectively transmitted to the ridge a1 and the ridge a2 … … ridge aN, the ridge a transmits the received electric signal to the comb tooth row a on the right side of the ridge a, so that the comb tooth row a on the right side of the ridge a has certain electric potential, certain attractive force is generated on the comb tooth row b corresponding to the comb tooth row a on the right side of the ridge a, the moving part is driven to generate displacement of the X axis to the left, the imaging chip anti-shake is realized, the external electric signal is disconnected after the anti-shake is finished, and the moving part can return to the initial position of the driver by means of the reset force of the decoupling beam and Qu Quliang.

(2) The external electric signal is transmitted to the L-shaped frame through the decoupling beam, then the L-shaped frame is respectively transmitted to the ridge a1 and the ridge a2 … … ridge aN, the ridge a transmits the received electric signal to the comb tooth row a at the left side of the ridge a, so that the comb tooth row a at the left side of the ridge a has certain electric potential, certain attractive force is generated on the comb tooth row b corresponding to the comb tooth row a at the left side of the ridge a, the motion part is driven to generate displacement of the X axis to the right, the imaging chip anti-shake is realized, the external electric signal is disconnected after the anti-shake is finished, and the motion part can return to the initial position of the driver by means of the reset force of the decoupling beam and Qu Quliang.

(3) The external electric signal is transmitted to the L-shaped frame through the decoupling beam, then the L-shaped frame is respectively transmitted to the ridge a1 and the ridge a2 … … ridge aN, the ridge a transmits the received electric signal to the comb tooth row a below the ridge a, so that the comb tooth row a below the ridge a has certain electric potential, certain attractive force is generated on the comb tooth row b corresponding to the comb tooth row a below the ridge a, the motion part is driven to generate displacement in the Y-axis direction, the imaging chip anti-shake effect is realized, the external electric signal is disconnected after the anti-shake is finished, and the motion part can return to the initial position of the driver by means of the reset force of the decoupling beam and Qu Quliang.

(4) The external electric signal is transmitted to the L-shaped frame through the decoupling beam, then the L-shaped frame is respectively transmitted to the ridge a1 and the ridge a2 … … ridge aN, the ridge a transmits the received electric signal to the comb tooth row a above the ridge a, so that the comb tooth row a above the ridge a has a certain potential, a certain attractive force is generated on the comb tooth row b corresponding to the comb tooth row a above the ridge a, the motion part is driven to generate Y-axis downward displacement, the imaging chip anti-shake is realized, the external electric signal is disconnected after the anti-shake is finished, and the motion part can return to the initial position of the driver by means of the restoring force of the decoupling beam and Qu Quliang.

2. The Z axis is used as a rotating shaft to rotate and shift the anti-shake device.

(1) Introducing external electric signals to Jie Ouliang to enable the first array to generate a trend of left movement along the X-axis, the second array to generate a trend of downward movement along the Y-axis, the third array to generate a trend of right movement along the X-axis, and the fourth array to generate a trend of upward movement along the Y-axis, wherein the four trends are generated together in the same time period, so that anti-shake in the anticlockwise direction taking the Z-axis as a rotating shaft can be completed;

(2) And (3) introducing external electric signals to Jie Ouliang to enable the first array to generate a trend of right movement along the X-axis, the second array to generate a trend of upward movement along the Y-axis, the third array to generate a trend of left movement along the X-axis, and the fourth array to generate a trend of downward movement along the Y-axis, wherein the four trends jointly occur in the same time period, and thus the anti-shake in the clockwise direction taking the Z-axis as the rotating shaft can be completed.

Examples

As shown in fig. 15 to 31, the second embodiment provides a process flow for preparing a MEMS actuation structure, wherein the MEMS actuation structure is a MEMS actuation structure, and the process flow includes:

(1) As shown in fig. 15, an insulator silicon wafer 4 (SOI wafer) is selected; photoresist spin coating is carried out on the SOI wafer 4, an ultraviolet lithography machine is used for exposing and etching patterning, and the positions and the shapes of etched grooves are marked;

the insulator silicon wafer 4 comprises a basal layer 43, a buried layer 42 and a structural layer 41, wherein the basal layer 43 is 5um to 50um in thickness, the structural layer 41 is 50um to 400um in thickness, and the buried layer 42 is 1um to 10um in thickness;

(1.1) masking with a number 1 reticle, the reticle comprising pads, lines and glue grooves.

The circuit comprises a sensor circuit and a comb tooth driving circuit, the circuit is divided into a wide line and a narrow line, the narrow line is arranged on the beam, other non-beam parts are all wide lines, the thinner line width is a narrow line width, and the width of the narrow line is 0.5um to 3um; the width of the bonding pad and the wider wire is a wide line width, and the wide line width is the width of the insulating layer and is about 3um to 15um; the width of the glue groove is 20um to 200um; the shape of the mask plate bonding pad is square, and the square side length is wide linewidth.

(2) As shown in fig. 16, the first trench 411 is etched on the SOI wafer 4 processed in step (1) by using a deep reactive ion etching (DIRE) process. And removing the photoresist spin-coated during the processing of the SOI wafer 4 in step (1) (most positive resists can be developed with alkaline solvents such as KOH (potassium hydroxide), TMAH (tetramethylammonium hydroxide), acetone or acetate.)

The deepest part of the first trench 411 is a wide line area and a glue groove, reaching the depth of the whole structure layer 41, and the etching time is controlled to be 20min to 60min, so that the etching is stopped immediately when reaching the buried layer 42 (oxide layer) of the SOI wafer 4.

(3) As shown in fig. 17, a first insulating layer 412 is applied to the exposed surface of the structure layer 41 in the SOI wafer 4 processed in step (2) after etching the first trench 411.

The first insulating layer 412 may be a silicon dioxide insulating layer formed by thermal oxidation in a high temperature furnace, or other insulating layer application process.

(4) As shown in fig. 18, the first trench 411 in the SOI wafer 4 processed in step (3) is filled with a conductive material 413, the first trench 411 is filled by a reliable deposition process to ensure that the first trench 411 is completely filled with the conductive material 413, and surface planarization is performed.

Wherein the conductive material 413 may be aluminum or other material having high conductivity, high strength and low cost; the top boundary of the first trench 411 will be where the opening of the first trench 411 is flush with the substrate.

(5) As shown in fig. 19, the SOI wafer 4 processed in step (4) is spin-coated with photoresist, exposed to ultraviolet lithography, and patterned by etching. The second trench 414 is etched using a DIRE process, the second trench 414 having a trench depth up to the full structural layer depth. The photoresist spun during the processing of the SOI wafer 4 in step (5) is removed.

(5.1) A No. 2 reticle is used, the reticle comprising an insulating layer.

The width of the insulating layer is a wide line width and is 3um to 15um. The etching time is controlled to ensure that the insulating layer channel etching is stopped immediately when it reaches the oxide layer 42 of the SOI wafer 4.

(6) As shown in fig. 20, the second trench 414 in the SOI wafer 4 processed in step (5) is filled with an insulating material 415, and the insulating material 415 may be a nitride or oxide of silicon and the surface is planarized. Leaving a second insulating layer 416 over the entire surface of structural layer 41.

(7) As shown in fig. 21, the SOI wafer 4 processed in step (6) is spin-coated with photoresist, exposed to ultraviolet lithography, and patterned by etching. The second insulating layer 416 is etched away. The photoresist spun during the processing of the SOI wafer 4 in step (7) is removed.

And (7.1) using a No. 3 mask, wherein the part to be removed of the mask comprises a bare drain bonding pad of an outer fixed frame and an inner movable frame, a comb tooth driving circuit tail end and a comb tooth area (to be electrified in a bridging way at the back), a deep reaction etching part (forming a structural layer) at the back, a hollowed weight-reducing part and a dispensing groove.

(8) As shown in fig. 22, a conductive layer 417 is deposited on the surface of the SOI wafer 4 processed in step (7) to serve as a contact between the end of the drive line of the teeth of the bridge and the comb area, and to form electrical communication, including high-potential comb teeth and ground comb teeth.

(9) As shown in fig. 23, the SOI wafer 4 processed in step (8) is spin-coated with photoresist, exposed by a uv lithography machine, patterned by etching, and the part of the number 4 mask plate that is removed correspondingly is etched. The photoresist spun during the processing of the SOI wafer 4 in step (9) is removed.

(9.1) using a No. 4 mask, the mask leaving a portion comprising bare drain pads on the outer and inner fixed frames, comb drive line ends and line to comb area, including high potential combs and grounded combs.

(10) As shown in fig. 24, a protective layer 418 is plated on the surface of the SOI wafer 4 processed in step (9), and planarized, and the material of the protective layer 418 is selected to be easily etched and cannot be positive photoresist, silicon dioxide, silicon, preventing the previous layers and structures from being damaged in the subsequent process.

(11) As shown in fig. 25, the SOI wafer processed in step (10) is turned over, and the base layer 43 is processed. Photoresist spin coating is carried out on the turned-over SOI wafer 4, and the photoresist is subjected to photoetching and etching patterning by an ultraviolet photoetching machine. The silicon layer of the corresponding base layer 43 is etched away. The photoresist spin-coated during the process of processing the SOI wafer 4 in step (11) is removed.

(11.1) with a No. 5 reticle, the removed portion of the reticle includes chamber 431 and separation grooves 432.

(12) As shown in fig. 26, the buried layer 42 of the SOI wafer 4 processed in step (11) is etched away of silicon dioxide.

(13) As shown in fig. 27, the SOI wafer processed in step (12) is spin-coated with photoresist, exposed to ultraviolet lithography, and patterned by etching. The corresponding silicon is etched away. The photoresist spun during the processing of the SOI wafer 4 in step (13) is removed. And (5) carrying out integral gluing on the supporting sheet 5.

(13.1) another silicon wafer is taken as the supporting sheet 5, and the thickness of the supporting sheet 5 is 300-1000um.

(13.2) the mask plate No. 5, the plate removing portion includes an air groove 51, and the width of the air groove 51 is 20um to 400um, and the depth is 40um to 250um.

(13.3) the supporting sheet 5 is glued in whole for later adhesion, and the glue thickness is 1um to 10um.

(14) As shown in fig. 28, the base layer 43 of the SOI wafer 4 processed in step (12) and the support sheet 5 processed in step (13) are bonded.

(15) As shown in fig. 29, the wafer after the bonding in step (14) is subjected to photoresist spin coating, uv lithography exposure, and etching patterning. Etching away the corresponding patterned protective layer material. And (3) removing the photoresist spun during the wafer processing in the step (15).

(15.1) using a No. 6 mask, which leaves only the peripheral raised table of the dispensing slot.

(16) As shown in fig. 30, the wafer processed in step (15) is subjected to photoresist spin coating, exposure by an ultraviolet lithography machine, and etching patterning. A DRIE etch was used. The photoresist spun during the processing of the wafer in step (16) is removed.

(16.1) using a No. 7 reticle, the removed portion of the reticle comprising all of the hollowed-out portions of the structure.

And (16.2) etching the silicon material corresponding to the patterning of the No. 7 mask pattern, and completely hollowing out.

(16.3) the glue between the support sheet 5 and the SOI wafer 4, the glue on the upper surface of the SOI wafer 4 are all removed.

(17) As shown in fig. 31, silicon dioxide in buried layer 42 of the wafer processed in step (16) is etched away, and the structure is separated, resulting in a MEMS actuation structure.

Specifically, the planarization process may be performed by a blanket etch process, or by IE, CMP, or a combination of both.

The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes or substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. A MEMS actuation structure comprising: a fixed part, a moving part and a decoupling beam; the fixed part is arranged at the periphery of the moving part, and a certain gap is formed between the fixed part and the moving part; the moving part comprises an array structure for providing driving force; the decoupling beam is arranged in a gap between the fixed part and the moving part, the decoupling beam is of a layered structure, a conductive circuit is arranged in the decoupling beam, and the conductive circuit conducts the fixed part and the moving part;

2. The MEMS actuating structure of claim 1, wherein gaps between each layer of the decoupling beams are the same, an insulating layer is further disposed in the decoupling beams, the insulating layer partially encapsulates the conductive lines for electrical insulation between the conductive lines, and the conductive lines and the insulating layer are both abutted against an upper surface of the decoupling beams;

3. The MEMS actuating structure according to claim 1, wherein the fixed portion comprises an outer frame, wherein the outer frame is provided with an anti-collision structure and a first decoupling beam connecting end, the anti-collision structure is disposed on an inner side of the outer frame, and the first decoupling beam connecting end is connected to and in communication with the first end of the decoupling beam.

4. The MEMS actuation structure of claim 1 wherein the moving portion includes: an inner frame, a cross frame, an L-shaped frame and an array structure; the inner frame is internally provided with a space, the cross-shaped frame and the array structure are arranged in the space, the array structure is composed of a plurality of arrays, the inner frame is connected with the cross-shaped frame, the space is divided into four subspaces, the arrays are respectively arranged in the four subspaces, an L-shaped frame is arranged between the inner frame and the arrays, and the L-shaped frame is electrically connected with the decoupling beam and the arrays.

5. The MEMS actuating structure according to claim 4, wherein the inner frame comprises two oppositely disposed first plates and two oppositely disposed second plates, the first and second plates having hollowed-out structures for reducing the mass of the moving parts; gaps are reserved at four corners formed between the first plate and the second plate, the first plate is used for fixing an imaging chip, the end part of the cross-shaped frame is connected with the first plate or the second plate, and the first plate and the second plate are electrically connected with the imaging chip.

6. The MEMS actuating structure according to claim 5, wherein the L-shaped frame comprises a long side, a short side and an L-corner, the short side is disposed in a gap reserved between the four corners of the first plate and the second plate, one end of the short side is provided with a second decoupling beam connecting end, the second decoupling beam connecting end is connected to and conducts with the second end of the decoupling beam, the other end of the short side is connected to the long side and forms the L-corner at the connection, and the long side is disposed adjacent to the first plate or the second plate and electrically connected to the array.

7. The MEMS actuation structure of claim 6 wherein each of the arrays includes a curve Qu Liang and a plurality of ridges, respectively, two curves Qu Liang are disposed in each of the arrays, one end of each of the two curves Qu Liang being disposed at the L-corner and at an end of the long side remote from the L-corner, respectively, and the other end of each of the two curves Qu Liang being disposed on a bridge of the cross frame; the plurality of ridges comprise a plurality of ridges a and a plurality of ridges b, one ends of the ridges a are connected with the long sides of the L-shaped frames, the other ends of the ridges a extend to the bridges of the cross-shaped frames and leave gaps with the bridges, one ends of the ridges b are connected with the bridges of the cross-shaped frames, the other ends of the ridges b extend to the long sides of the L-shaped frames and leave gaps with the long sides, the ridges a and the ridges b are respectively provided with comb tooth rows, the comb tooth rows on the ridges a and the comb tooth rows on the ridges b are staggered and crossed with each other, and the comb tooth rows can conduct electricity and form capacitors for providing driving force;

8. The MEMS actuating structure according to claim 7, wherein the ridges a are disposed adjacent to the ridges b, wherein the ridges a and the ridges b extend in opposite directions, and wherein the number of ridges a is N, the number of ridges b is N-1, or the number of ridges a is N-1, and the number of ridges b is N.

9. The MEMS actuation structure of claim 7 wherein the comb teeth array includes a comb teeth array a and a comb teeth array b, the comb teeth array a being disposed on the ridge a and remaining energized or grounded; the comb tooth row b is arranged on the ridge b and keeps grounded or electrified; the comb tooth row a comprises comb teeth a and interdental gaps a, the comb tooth row b comprises comb teeth b and interdental gaps b, the comb teeth a correspond to the interdental gaps b, a part of each comb tooth a stretches into each interdental gap b, the comb teeth b correspond to the interdental gaps a, and a part of each comb tooth b stretches into each interdental gap a.

10. The MEMS actuating structure of claim 1 wherein each of the decoupling beams has at least one corner, the decoupling beams being of V-type, N-type or M-type configuration.

11. The preparation process flow of the MEMS actuating structure is characterized by comprising the following steps of:

(5) Etching a second groove on the structural layer;

(7) Etching away the second insulating layer;

(15) Etching off the protective layer material corresponding to the pattern;

(16) Etching all the hollowed-out parts in the structure of the step (16);

(17) Etching away the buried silicon dioxide so that the etched portion is separated from the overall structure, forming the MEMS actuation structure of any one of claims 1 to 10.