CN116471915A - Thermoelectric device connected by L-shaped metal conducting plates and parameter determining method thereof - Google Patents

Thermoelectric device connected by L-shaped metal conducting plates and parameter determining method thereof Download PDF

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CN116471915A
CN116471915A CN202310255953.1A CN202310255953A CN116471915A CN 116471915 A CN116471915 A CN 116471915A CN 202310255953 A CN202310255953 A CN 202310255953A CN 116471915 A CN116471915 A CN 116471915A
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shaped metal
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罗丁
刘泽瑞
杨学林
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China Three Gorges University CTGU
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects

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Abstract

A thermoelectric device connected by L-shaped metal conducting plates and a parameter determining method thereof are provided, wherein the thermoelectric device comprises P-type semiconductors and N-type semiconductors with unequal heights; a space exists between the P-type semiconductor and the N-type semiconductor; an upper ceramic plate and a lower ceramic plate with the same dimension; the first L-shaped metal conducting plate is positioned on the upper layer, and the second L-shaped metal conducting plate and the third metal conducting plate are positioned on the lower layer. The invention changes the relative heights of the P-type semiconductor and the N-type semiconductor by introducing the L-type metal conducting strip, so that the current flowing through the P-type semiconductor and the N-type semiconductor are kept consistent, the problem of power limitation caused by unequal semiconductor parameters in the traditional thermoelectric device is overcome, and finally the thermoelectric conversion rate of the whole device is improved.

Description

Thermoelectric device connected by L-shaped metal conducting plates and parameter determining method thereof
Technical Field
The invention relates to the technical field of thermoelectric devices, in particular to a thermoelectric device connected by adopting L-shaped metal conducting plates and a parameter determination method thereof.
Background
Because the electrical parameters and the thermal parameters of the P-type semiconductor and the N-type semiconductor in the conventional thermoelectric device are different, the current flowing in the two semiconductors is not equal under the same working condition, and the current on the larger side of the two semiconductors is limited to the smaller side, so that the overall output performance of the device is reduced. For example:
thanks to the development of the modern thermoelectric material preparation technology, the thermoelectric figure of merit of the corresponding material has broken through to a certain extent, and the thermoelectric technology is beginning to be widely applied to the field of heat energy recovery, such as automobile exhaust waste heat recovery, industrial waste heat recovery and the like. Because the output power of a single thermocouple is far from the actual requirement, a plurality of PN thermoelectric devices are generally integrated into a thermoelectric generation module, so that the output power reaches the energy level capable of being recycled. Because the thermoelectric power generation module is obtained by connecting a plurality of PN thermoelectric devices in series through ordered arrangement, when the overall output performance is evaluated, a single PN thermoelectric device is used as a research object to perform structural optimization, so that the overall performance is improved, and in the process of optimizing a traditional thermoelectric structure, students propose a plurality of novel structures, such as a Y-type thermoelectric structure, a multi-material segmented thermoelectric structure, an annular thermoelectric structure and the like. Although these structures exhibit good performance in different working mediums, the optimization methods of these structures are all improved on the basis of adopting the traditional symmetrical thermoelectric structure, and neglect the essence of connecting P-type semiconductors and N-type semiconductors in series, so that P-type semiconductors and N-type semiconductors with the same structural size and number are adopted, and in fact, thermoelectric material parameters corresponding to the P-pole and the N-pole are not consistent, so that when the two work under the same temperature difference, the current densities generated by the P-pole and the N-pole are not equal, and the whole output current is limited to the smaller one of the two.
Disclosure of Invention
The invention aims to provide a thermoelectric device connected by an L-shaped metal conducting plate and a parameter determining method thereof, wherein the relative heights of a P-type semiconductor and an N-type semiconductor are changed by introducing the L-shaped metal conducting plate, so that the current flowing through the P-type semiconductor and the N-type semiconductor are kept consistent, the problem of power limitation caused by unequal semiconductor parameters in the traditional thermoelectric device is solved, and finally the whole thermoelectric conversion rate of the device is improved.
The technical scheme adopted by the invention is as follows:
a thermoelectric device connected with an L-shaped metal conductive sheet, comprising:
p-type semiconductor and N-type semiconductor with different heights; a space exists between the P-type semiconductor and the N-type semiconductor; an upper ceramic plate and a lower ceramic plate with the same dimension;
the first L-shaped metal conducting plate is positioned on the upper layer, the second L-shaped metal conducting plate and the third metal conducting plate are positioned on the lower layer; the bottom surface of the upper ceramic plate is connected with the top surface of the longer part of the first L-shaped metal conducting plate;
the bottom surface of the shorter part of the first L-shaped metal conducting plate is connected with the top surface of the P-type semiconductor and is overlapped, the bottom surface of the P-type semiconductor is connected with the top surface of the shorter part of the second L-shaped metal conducting plate and is overlapped, the bottom surface of the longer part of the first L-shaped metal conducting plate is connected with the top surface of the N-type semiconductor, and the bottom surface of the N-type semiconductor is connected with the top surface of the third metal conducting plate; the bottom surface of the longer part of the second L-shaped metal conducting strip positioned on the left side of the lower layer and the bottom surface of the third metal conducting strip positioned on the right side of the lower layer are connected with the top surface of the lower layer ceramic plate.
The left side surface of the longer part of the first L-shaped metal conducting plate, the left side surface of the shorter part of the first L-shaped metal conducting plate, the left side surface of the P-type semiconductor and the left side surface of the shorter part of the second L-shaped metal conducting plate are overlapped;
the right side surface of the shorter part of the first L-shaped metal conducting plate, the right side surface of the P-type semiconductor, the right side surface of the shorter part of the second L-shaped metal conducting plate and the right side surface of the longer part of the second L-shaped metal conducting plate are overlapped;
the left side surface of the N-type semiconductor and the left side surface of the third metal conducting plate are overlapped;
the right side surface of the longer part of the first L-shaped metal conducting plate and the right side surface of the N-shaped semiconductor are overlapped;
the left side surface of the longer part of the second L-shaped metal conducting plate and the left side surface of the lower ceramic plate are overlapped and are positioned on a horizontal plane with the left side surface of the upper ceramic plate;
the right side face of the third metal conducting strip and the right side face of the lower ceramic plate are overlapped and are positioned on a horizontal plane with the right side face of the upper ceramic plate.
The interval between the P-type semiconductor and the N-type semiconductor is L 0 。
The lengths of the P-type semiconductor and the N-type semiconductor are L 1 The two heights are different by 2H 0 Wherein the height of the lower semiconductor is H 1 The height of the semiconductor on the higher side is H 1 +2H 0 。
The height of the longer part of the first L-shaped metal conducting plate is H 2 The length of the longer part of the first L-shaped metal conducting plate is equal to the sum of the lengths of the P-type semiconductor and the N-type semiconductor plus the interval between the two, namely 2L 1 +L 0 ；
The shorter part of the second L-shaped metal conducting plate has the height of H 0 Dry iΔH of length L 1 The method comprises the steps of carrying out a first treatment on the surface of the The height of the longer part of the second L-shaped metal conducting plate and the height of the third metal conducting plate are H 2 The height of the longer part of the second L-shaped metal conducting plate and the length of the third metal conducting plate are L 1 。
The length of the upper ceramic plate and the lower ceramic plate is equal to 3L 0 +2L 1 Height is equal to H 3 。
The widths of the upper ceramic plate, the lower ceramic plate, the metal conducting strip and the semiconductor are L 0 。
The sum of the height of the shorter part of the first L-shaped metal conducting plate and the height of the shorter part of the second L-shaped metal conducting plate is 2H 0 The method comprises the steps of carrying out a first treatment on the surface of the The height difference between the P-type semiconductor and the N-type semiconductor is 2H 0 。
The shorter part of the first L-shaped metal conducting plate has the height H 0 + -i delta H of length L 1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein i represents the multiple of the change of the heights of the upper and lower metal conductive sheets with delta H as the base number, and the parameterIf->At this time, in the upper and lower metal conductive sheets, the left and right ends of one electrode are equal in height, and the other electrode is equal in heightThe heights of the left side and the right side of the electrode are different by 2H 0 。
The first L-shaped metal conducting plate, the second L-shaped metal conducting plate and the third metal conducting plate all adopt L-shaped copper electrodes. Thermoelectric device parameter determining method, and current flowing through P-type semiconductor and N-type semiconductor is I respectively P 、I N Calculating the integral median value of the resistivities of the P-type semiconductor and the N-type semiconductorAnd->The value of the resistor, the working conditions of the ceramic plate, the P-type semiconductor, the N-type semiconductor, the metal conducting plate and the load resistor are established, and the resistor is formed by I P ＝I N Comparing the height relation of the P-type semiconductor and the N-type semiconductor; the method comprises the following steps:
if it isThe P-type semiconductor has a height of H 1 The N-type semiconductor has a height of H 1 +2H 0 ；
If it isThe P-type semiconductor has a height of H 1 +2H 0 The N-type semiconductor has a height of H 1 ；
The P-type semiconductor and the N-type semiconductor are equal in height and H in height 1 I=0, h at this time 0 ＝0。
According to I P ＝I N Principle, calculate H 1 、H 0 Finally, the optimal ratio of the heights of the P-type semiconductor and the N-type semiconductor is obtained, and the specific steps are as follows:
(i) Obtaining temperature T of hot end supporting leg of semiconductor on higher side based on thermal resistance network h-M And cold end leg temperature T c-M Wherein, the heat conductivity of the first L-shaped metal conducting strip longer part, the second L-shaped metal conducting strip longer part and the third metal conducting strip is higher, so that the temperature change of the electrodes of the two parts in the heat conduction process can be ignored;
according to the thermoelectric material parameters given by the invention, the thermoelectric material parameters are calculated to obtainThus, the higher side semiconductor is an N-type semiconductor;
(ii) According to the heat conduction formula, calculating the temperature T of the hot end supporting leg of the semiconductor at the lower side h-m And cold end leg temperature T c-m The method comprises the steps of carrying out a first treatment on the surface of the According to the thermoelectric material parameters given by the invention, the thermoelectric material parameters are calculated to obtainTherefore, the lower side semiconductor is a P-type semiconductor.
(iii) Respectively calculating respective voltages according to the obtained semiconductor temperature difference at two sides, and deducing H 1 、H 0 And I P 、I N Relation between them, finally, obtain I P ＝I N When H is 1 、H 0 The ratio of the two is further used for determining the optimal ratio of the heights of the semiconductors at the two sides.
The temperature operating conditions were set as: the bottom surface of the lower ceramic plate is set as a high-temperature boundary, and the top surface of the upper ceramic plate is set as a low-temperature boundary;
the current operating conditions were set as: the left end face of the second L-shaped metal conducting strip connected with the lower side semiconductor is arranged to be in electrical contact with the left end face of the lower end portion, and the right end face of the third L-shaped metal conducting strip connected with the higher side semiconductor is arranged to be grounded.
The invention relates to a thermoelectric device connected by an L-shaped metal conducting plate and a parameter determining method thereof, which have the following technical effects:
1) The thermoelectric device is internally connected in series by a P-type semiconductor and an N-type semiconductor through an L-type metal conducting plate, and the connected whole is clamped between two layers of ceramic plates; the heights of the P-type semiconductor and the N-type semiconductor are different, and the specific size is determined by the current flowing in each semiconductor.
2) The invention introduces the L-shaped metal conducting plate, so that the current flowing through the P-type semiconductor and the N-type semiconductor is kept consistent, the integral output of the thermoelectric device can be improved, the traditional thermoelectric device is guided to be optimized, and the energy consumption is reduced.
3) The invention adopts the thermoelectric device connected by the L-shaped metal conducting plates, overcomes the disadvantage factor by changing the relative heights of the two semiconductors, and the P-type semiconductor and the N-type semiconductor with unequal heights are connected in series through the L-shaped metal conducting plates, and the whole outside is covered with the ceramic plate; when the height ratio of the P-type semiconductor to the N-type semiconductor reaches a certain value, the current flowing through the P-type semiconductor and the N-type semiconductor is consistent, and the thermoelectric device has the best external output performance.
4) The invention provides a thermoelectric device connected by adopting an L-shaped metal conducting plate and a parameter determining method thereof in a numerical solution mode, and the ratio of the optimal heights of a P-type semiconductor and an N-type semiconductor is determined.
Drawings
The invention is further illustrated by the following examples in conjunction with the accompanying drawings:
FIG. 1 is a schematic diagram of a planar structure of a thermoelectric device connected by L-shaped metal conductive plates;
FIG. 2 is a schematic diagram of the internal temperature profile of a thermoelectric device;
FIG. 3 is a flow chart of the height calculation of P-type and N-type semiconductors in a thermoelectric device;
fig. 4 is a three-dimensional geometry of a thermoelectric device employing L-shaped metal conductive sheet connections.
Detailed Description
The technical scheme of the invention is described below with reference to the accompanying drawings, specific thermoelectric devices and material parameters thereof:
as shown in fig. 1, a thermoelectric device connected by an L-shaped metal conductive sheet, comprising: a P-type semiconductor 2 and an N-type semiconductor 4 with different heights; a space exists between the P-type semiconductor 2 and the N-type semiconductor 4; an upper ceramic plate 1 and a lower ceramic plate 1' of the same dimensions; the first L-shaped metal conducting strip 3.1 is positioned on the upper layer, the second L-shaped metal conducting strip 3.2 is positioned on the lower layer, and the third L-shaped metal conducting strip 3.3 is positioned on the lower layer; the bottom surface of the upper ceramic plate 1 is connected with the top surface of the longer part of the first L-shaped metal conducting plate 3.1.
The bottom surface of the shorter part of the first L-shaped metal conducting plate 3.1 is connected with the top surface of the P-type semiconductor 2 and is overlapped, the bottom surface of the P-type semiconductor 2 is connected with the top surface of the shorter part of the second L-shaped metal conducting plate 3.2 and is overlapped, the bottom surface of the longer part of the first L-shaped metal conducting plate 3.1 is connected with the top surface of the N-type semiconductor 4, and the bottom surface of the N-type semiconductor 4 is connected with the top surface of the third metal conducting plate 3.3;
the bottom surface of the longer part of the second L-shaped metal conducting strip 3.2 positioned on the left side of the lower layer and the bottom surface of the third metal conducting strip 3.3 positioned on the right side of the lower layer are connected with the top surface of the lower layer ceramic plate 1'.
The left side surface of the longer part of the first L-shaped metal conducting plate 3.1, the left side surface of the shorter part of the first L-shaped metal conducting plate 3.1, the left side surface of the P-type semiconductor 2 and the left side surface of the shorter part of the second L-shaped metal conducting plate 3.2 are overlapped;
the right side surface of the shorter part of the first L-shaped metal conducting plate 3.1, the right side surface of the P-type semiconductor 2, the right side surface of the shorter part of the second L-shaped metal conducting plate 3.2 and the right side surface of the longer part of the second L-shaped metal conducting plate 3.2 are overlapped;
the left side surface of the N-type semiconductor 4 and the left side surface of the third metal conducting plate 3.3 are overlapped;
the right side surface of the longer part of the first L-shaped metal conducting plate 3.1 is overlapped with the right side surface of the N-type semiconductor 4;
the left side surface of the longer part of the second L-shaped metal conducting plate 3.2 is overlapped with the left side surface of the lower ceramic plate 1', and is positioned on a horizontal plane with the left side surface of the upper ceramic plate 1;
the right side surface of the third metal conducting strip 3.3 and the right side surface of the lower ceramic plate 1' are overlapped and are positioned on a horizontal plane with the right side surface of the upper ceramic plate 1.
The interval between the P-type semiconductor 2 and the N-type semiconductor 4 is L 0 。
The lengths of the P-type semiconductor 2 and the N-type semiconductor 4 are L 1 The two heights are different by 2H 0 Wherein the height of the lower semiconductor is H 1 The height of the semiconductor on the higher side is H 1 +2H 0 。
The height of the longer part of the first L-shaped metal conducting plate 3.1 is H 2 The longer part of the first L-shaped metal conducting plate 3.1 is equal to the sum of the lengths of the P-type semiconductor 2 and the N-type semiconductor 4 and the interval between the two, namely 2L 1 +L 0 ；
The shorter part of the second L-shaped metal conducting plate 3.2 has the height ofLength L 1 The method comprises the steps of carrying out a first treatment on the surface of the The height of the longer part of the second L-shaped metal conducting plate 3.2 and the height of the third metal conducting plate 3.3 are H 2 The height of the longer part of the second L-shaped metal conducting plate 3.2 and the length of the third metal conducting plate 3.3 are both L 1 。
The length of the upper ceramic plate 1 and the lower ceramic plate 1' is equal to 3L 0 +2L 1 Height is equal to H 3 。
The widths of the upper ceramic plate, the lower ceramic plate, the metal conducting strip and the semiconductor are L 0 。
The height of the shorter part of the first L-shaped metal conducting plate 3.1 and the sum of the heights of the shorter parts of the second L-shaped metal conducting plate 3.2 are 2H 0 The method comprises the steps of carrying out a first treatment on the surface of the The height difference between the P-type semiconductor 2 and the N-type semiconductor 4 is 2H 0 。
The first L-shaped metal conducting strip 3.1, the second L-shaped metal conducting strip 3.2 and the third metal conducting strip 3.3 are all L-shaped copper electrodes.
As shown in FIG. 2, the P-type semiconductor 2 and the N-type semiconductor 4 are connected by L-type copper electrodes, wherein the temperature of the top surface of the upper ceramic plate 1 is the cold end temperature T c The bottom surface temperature of the lower ceramic plate 1' is the hot end temperature T h The method comprises the steps of carrying out a first treatment on the surface of the In the lower copper electrode, the contact temperature at the side connected with the P-type semiconductor 2 is T h-m The contact temperature at the side connected with the N-type semiconductor 4 is T h-M The method comprises the steps of carrying out a first treatment on the surface of the In the upper layer first L-shaped metal conductive sheet 3.1, the contact temperature on the side connected with the P-type semiconductor 2 is T c-m Contact to the connection side of N-type semiconductor 4At a temperature T c-M 。
The parameter determining method of thermoelectric device connected by L-shaped metal conducting plate includes the following steps:
step one, calculating the integral median of the resistivities of the P-type semiconductor 2 and the N-type semiconductor 4 by the temperature differenceAnd->Value, determine the magnitude relation of the heights of the P-type semiconductor 2 and the N-type semiconductor 4:
(1) Calculating the median value of the resistivity integral of the P-type semiconductor 2
Wherein ρ is P (T) is the resistivity of each P-type semiconductor;
(2) Calculating the median value of the resistivity integral of the N-type semiconductor 4
Wherein ρ is N (T) is the resistivity of each N-type semiconductor;
(3) According to I P ＝I N In principle, the height of the P-type semiconductor 2 is compared with that of the N-type semiconductor 4 ifThe P-type semiconductor 2 has a height H 1 The N-type semiconductor 4 has a height H 1 +2H 0 The method comprises the steps of carrying out a first treatment on the surface of the If->The P-type semiconductor 2 has a height H 1 +2H 0 The N-type semiconductor 4 has a height H 1 The method comprises the steps of carrying out a first treatment on the surface of the If->The P-type semiconductor 2 and the N-type semiconductor 4 are equal in height and H in height 1 I.e.Calculated to get->Thus, the left-hand shorter semiconductor is P-type semiconductor 2 and the right-hand longer semiconductor is N-type semiconductor 4.
Step two, setting temperature boundary conditions as follows:
the bottom surface of the lower ceramic plate 1' is set as a high temperature boundary, and the top surface of the upper ceramic plate 1 is set as a low temperature boundary.
The current boundary conditions are set as follows:
a second L-shaped metal conducting plate 3.2 connected with the P-type semiconductor 2, and the left end face of the second L-shaped metal conducting plate is arranged to be in electrical contact; the N-type semiconductor 4 is connected to the third metal conductive sheet 3.3, and the right end face thereof is grounded.
Step three, as shown in FIG. 3, calculateThe hot end temperature and the cold end temperature of the P-type semiconductor 2 and the N-type semiconductor 4 are respectively calculated based on a thermal resistance network, wherein a third metal conducting plate 3.3 connected with the N-type semiconductor 4 is of a planar structure, and temperature change in conduction of the third metal conducting plate can be ignored, namely:
T h-M ＝T h (1)
T c-M ＝T c (2)
wherein T is h-M T represents the temperature of the hot end of the N-type semiconductor c-M Indicating the cold end temperature of the N-type semiconductor.
The upper and lower copper electrodes connected with the P-type semiconductor 2 are of an L-shaped structure, and the hot end temperature and the cold end temperature of the P-type semiconductor are calculated by using a heat flow formula, namely:
in which Q h Representing the hot end heat flow of the P-type semiconductor, Q c Represents the cold end heat flow of the P-type semiconductor, R tc-h Represents the hot end thermal resistance of the upper end part of the lower layer L-shaped metal conducting plate, R tc-c Cold end thermal resistance of lower end part of upper layer L-shaped metal conducting plate is represented by T h-m Represents the hot end temperature, T, of the P-type semiconductor c-m Indicating the cold end temperature of the P-type semiconductor.
Then, the Seebeck voltages of the P-type semiconductor 2 and the N-type semiconductor 4 are calculated according to the internal temperature difference to obtain I P 、I N The specific steps are as follows:
(1) Calculation of Q from the thermal conduction equation h And Q is equal to c The method comprises the following steps:
wherein lambda is P(T) Represents the thermal conductivity, lambda of P-type semiconductor N(T) Represents the thermal conductivity of an N-type semiconductor, S P(r) Seebeck constant, S, representing P-type semiconductor N(T) Seebeck constant of N-type semiconductor, I is circuit current, R P Represents a P-type semiconductor resistor, R N The N-type semiconductor resistor is represented, wherein the cross sectional areas of the upper end face and the lower end face of the P-type semiconductor and the N-type semiconductor are L 1 2 。
(2) The respective resistances of the P-type semiconductor 2 and the N-type semiconductor 4 were calculated, namely:
wherein R is P Represents a P-type semiconductor resistor, R N Representing the N-type semiconductor resistance.
(3) Calculating Seebeck voltages in the P-type semiconductor 2 and the N-type semiconductor 4, and determining I P And I N The method comprises the following steps:
I P ＝I N (11)
wherein I is P 、I N The sizes are I.
(4) External load R L The overall output power P is calculated out Wherein P is out ＝Q h -Q c The method comprises the following steps:
P out ＝I 2 R L (12)
P out ＝S P(T) I(T h-m -T c-m )-S N(r) I(T h-M -T c-M )-I 2 (R P +R N ) (13)
deriving I from temperature boundary conditions, coupled with the above equations P 、I N And H is 0 、H 1 Relation of (1), let I P ＝I N Calculation of
The thermoelectric materials used for the P-type semiconductor 2 and the N-type semiconductor 4 used in this example are BiSbTeSe-based materials, and the thermoelectric material parameters of the BiSbTeSe-based P-type and N-type semiconductors are listed in table 1.
TABLE 1 thermoelectric material parameters for BiSbTeSe-based P-type and N-type semiconductors
In addition, the relevant dimensional parameters and other parameters for each component are listed in table 2.
TABLE 2 semiconductor parameters and other parameters

Claims (8)

1. A thermoelectric device connected by an L-shaped metal conductive sheet, comprising:
a P-type semiconductor (2) and an N-type semiconductor (4) with different heights;
a space exists between the P-type semiconductor (2) and the N-type semiconductor (4);
an upper ceramic plate (1) and a lower ceramic plate (1') with the same dimension;
a first L-shaped metal conducting plate (3.1) positioned at the upper layer, a second L-shaped metal conducting plate (3.2) positioned at the lower layer and a third metal conducting plate (3.3);
the bottom surface of the upper ceramic plate (1) is connected with the top surface of the longer part of the first L-shaped metal conducting plate (3.1);
the bottom surface of the shorter part of the first L-shaped metal conducting plate (3.1) is connected with the top surface of the P-shaped semiconductor (2) and is overlapped, the bottom surface of the P-shaped semiconductor (2) is connected with the top surface of the shorter part of the second L-shaped metal conducting plate (3.2) and is overlapped, the bottom surface of the longer part of the first L-shaped metal conducting plate (3.1) is connected with the top surface of the N-shaped semiconductor (4), and the bottom surface of the N-shaped semiconductor (4) is connected with the top surface of the third metal conducting plate (3.3);
the bottom surface of the longer part of the second L-shaped metal conducting strip (3.2) positioned on the left side of the lower layer and the bottom surface of the third metal conducting strip (3.3) positioned on the right side of the lower layer are connected with the top surface of the lower layer ceramic plate (1').
2. A thermoelectric device connected by an L-shaped metal conductive sheet according to claim 1, wherein: the left side surface of the longer part of the first L-shaped metal conducting plate (3.1), the left side surface of the shorter part of the first L-shaped metal conducting plate (3.1), the left side surface of the P-type semiconductor (2) and the left side surface of the shorter part of the second L-shaped metal conducting plate (3.2) are overlapped;
the right side surface of the shorter part of the first L-shaped metal conducting plate (3.1), the right side surface of the P-type semiconductor (2), the right side surface of the shorter part of the second L-shaped metal conducting plate (3.2) and the right side surface of the longer part of the second L-shaped metal conducting plate (3.2) are overlapped;
the left side surface of the N-type semiconductor (4) and the left side surface of the third metal conducting plate (3.3) are overlapped;
the right side surface of the longer part of the first L-shaped metal conducting plate (3.1) is overlapped with the right side surface of the N-type semiconductor 4;
the left side surface of the longer part of the second L-shaped metal conducting plate (3.2) is overlapped with the left side surface of the lower ceramic plate (1'), and is positioned on a horizontal plane with the left side surface of the upper ceramic plate (1);
the right side surface of the third metal conducting strip (3.3) and the right side surface of the lower ceramic plate (1') are overlapped and are positioned on a horizontal plane with the right side surface of the upper ceramic plate (1).
3. A thermoelectric device connected by an L-shaped metal conductive sheet according to claim 1, wherein: the sum of the heights of the shorter parts of the first L-shaped metal conducting plates (3.1) and the shorter parts of the second L-shaped metal conducting plates (3.2) is 2H 0 The method comprises the steps of carrying out a first treatment on the surface of the The height difference between the P-type semiconductor (2) and the N-type semiconductor (4) is 2H 0 。
4. A thermoelectric device connected by L-shaped metal conductive sheets as in claim 3, wherein: the shorter part of the first L-shaped metal conducting plate (3.1) has the height H 0 + -i delta H of length L 1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein i represents the multiple of the change of the heights of the upper and lower metal conductive sheets with delta H as the base number, and the parameterIf->At this time, in the upper and lower metal conductive sheets, the left and right ends of one electrode are equal in height, and the left and right sides of the other electrode are 2H different in height 0 。
5. A thermoelectric device connected by L-shaped metal conductive sheets as in claim 3, wherein: the first L-shaped metal conducting strip (3.1), the second L-shaped metal conducting strip (3.2) and the third metal conducting strip (3.3) are all L-shaped copper electrodes.
6. A method of determining a parameter of a thermoelectric device as set forth in any one of claims 1 to 5, wherein: the current flowing through the P-type semiconductor (2) and the N-type semiconductor (4) is I P 、I N Calculating the integral median of the resistivities of the P-type semiconductor (2) and the N-type semiconductor (4)And->The operating conditions of the ceramic plate, the P-type semiconductor (2), the N-type semiconductor (4), the metal conductive sheet and the load resistor are established, and the value is defined by I P ＝I N Comparing the height of the P-type semiconductor (2) and the N-type semiconductor (4); the method comprises the following steps:
if it isThe height of the P-type semiconductor (2) is H 1 The N-type semiconductor (4) has a height H 1 +2H 0 ；
If it isThe height of the P-type semiconductor (2) is H 1 +2H 0 The N-type semiconductor (4) has a height H 1 。/>The P-type semiconductor (2) and the N-type semiconductor (4) are equal in height and H in height 1 I=0, h at this time 0 ＝0。
7. The method of determining a parameter of a thermoelectric device as set forth in claim 6, wherein:
according to I P ＝I N Principle, calculate H 1 、H 0 Finally, the optimal ratio of the heights of the P-type semiconductor (2) and the N-type semiconductor (4) is obtained, and the specific steps are as follows:
(i) Obtaining temperature T of hot end supporting leg of semiconductor on higher side based on thermal resistance network h-M And cold end leg temperature T c-M Wherein, because the longer part of the first L-shaped metal conducting strip (3.1) and the longer part of the second L-shaped metal conducting strip (3.2) and the third metal conducting strip (3.3) have higher heat conductivity, the temperature change of the electrodes of the two parts in the heat conduction process can be ignored;
(ii) According to the heat conduction formula, calculating the temperature T of the hot end supporting leg of the semiconductor at the lower side h-m And cold end leg temperature T c-m ；
(iii) Respectively calculating respective voltages according to the obtained semiconductor temperature difference at two sides, and deducing H 1 、H 0 And I P 、I N Relation between them, finally, obtain I P ＝I N When H is 1 、H 0 The ratio of the two is further used for determining the optimal ratio of the heights of the semiconductors at the two sides.
8. The thermoelectric device parameter determination method as set forth in claim 7, wherein:
the temperature operating conditions were set as: the bottom surface of the lower ceramic plate (1') is set as a high-temperature boundary, and the top surface of the upper ceramic plate (1) is set as a low-temperature boundary;
the current operating conditions were set as: the left end face of the second L-shaped metal conducting strip (3.2) connected with the lower side semiconductor is arranged to be in electrical contact with the right end face of the third L-shaped metal conducting strip (3.3) connected with the higher side semiconductor, which corresponds to the lower end portion, is arranged to be grounded.
CN202310255953.1A 2023-03-16 2023-03-16 Thermoelectric device connected by L-shaped metal conducting plates and parameter determining method thereof Pending CN116471915A (en)

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