CN116471859A - Blue perovskite light-emitting diode and preparation method thereof - Google Patents

Blue perovskite light-emitting diode and preparation method thereof Download PDF

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CN116471859A
CN116471859A CN202310178340.2A CN202310178340A CN116471859A CN 116471859 A CN116471859 A CN 116471859A CN 202310178340 A CN202310178340 A CN 202310178340A CN 116471859 A CN116471859 A CN 116471859A
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spin coating
perovskite
light emitting
blue
perovskite light
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王坚
曾慕雪
王磊
陈丹
张淦帅
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South China University of Technology SCUT
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Abstract

The invention discloses a blue perovskite light-emitting diode and a preparation method thereof; the blue perovskite light-emitting diode comprises a light-emitting layer, wherein the light-emitting layer is a perovskite light-emitting layer coated with an organic solution of tetrabutylammonium chloride in a spin mode. According to the invention, the luminescent layer is obtained by spin coating an organic solution of tetrabutylammonium chloride on the perovskite luminescent layer. The perovskite luminescent layer after spin coating tetrabutylammonium chloride well realizes blue light emission, and solves the problem that inorganic chlorine is difficult to be dissolved in a precursor in halogen engineering. Meanwhile, the adopted dynamic spin-coating material is tetrabutylammonium chloride which is an ionic compound and is dissolved in chlorobenzene to ionize chloride ions, so that excessive hydrolysis reaction can not occur, and the spectrum conversion from green to blue, which is close to 50nm, is realized efficiently. In addition, the addition of tetrabutylammonium chloride can passivate defects, and is beneficial to obtaining a high-quality perovskite luminescent layer.

Description

Blue perovskite light-emitting diode and preparation method thereof
Technical Field
The invention belongs to the technical field of photoelectric devices, and particularly relates to a blue perovskite light-emitting diode and a preparation method thereof.
Background
The metal halide perovskite material has excellent performances of low-temperature solution processing, high carrier mobility, adjustable optical band gap, larger carrier diffusion length, high color purity and the like, and becomes a powerful candidate material for preparing high-efficiency photoelectric devices. The development is very rapid, the efficiency is greatly improved in a short time, and the efficiency of the green light and red light PeLED is over 20 percent at present. But the development of blue perovskite light emitting diodes is relatively slow, especially in the case of deep blue peleds. Currently, there are two main approaches to deep blue emission, namely spatial engineering and halogen engineering. The space engineering is to utilize quantum finite field effect and regulate and control the band gap of perovskite by doping organic ligands, so as to realize blue shift, but the realization of deep blue light requires more organic ligands, which can lead to serious non-radiative recombination and aggravate charge injection problem. In halogen engineering, it is necessary to incorporate chloride ions into the precursor to adjust the band gap to undergo a blue shift in light color, but the low solubility of inorganic chloride salts in DMSO/DMF limits the possibility of component control, and chloride ions can lead to higher defect state densities (Nenon DP, pressler K, kang J, et al design principles for trap-free CsPbX3 nanocrystals: enumerating and eliminating surface halide vacancies with softer Lewis bases [ J ] Journal of the American Chemical Society,2018,140 (50): 17760-17772.). Therefore, in order to synchronize the overall development of the three primary colors of the PeLEDs, the problems of preparation and efficiency improvement of the blue PeLEDs are solved.
Disclosure of Invention
In order to solve the problems, the invention aims to provide a blue perovskite light emitting diode and a preparation method thereof. According to the method, through dynamic spin coating post-treatment of the chlorine-containing quaternary ammonium salt, the ion exchange is realized by efficiently and quickly doping chloride ions, and the light color conversion from green light to blue light, which is approximately 50nm, is realized without redundant hydrolysis reaction; and simultaneously, the luminous efficiency is improved.
The above object of the present invention is achieved by the following technical scheme:
a blue perovskite light-emitting diode comprises a light-emitting layer, wherein the light-emitting layer is a perovskite light-emitting layer spin-coated with an organic solution of tetrabutylammonium chloride.
Preferably, the perovskite light-emitting layer is composed of phenethyl ammonium bromide, cesium bromide and lead bromide with the molar ratio of 0.2-0.6:1.0-1.2:1; the thickness of the perovskite luminescent layer is 10-20nm.
Further preferably, the perovskite light-emitting layer is composed of phenethyl ammonium bromide, cesium bromide and lead bromide in a molar ratio of 0.4:1:1;
preferably, the perovskite light-emitting layer is formed by spin-coating a perovskite precursor solution; wherein the perovskite precursor solution is composed of PEABr, csBr and PbBr 2 The preparation, spin coating speed is 3000-6000rpm/min, spin coating time is 30-60s, and annealing is carried out for 1-10min at 60-90 ℃ under protective atmosphere after spin coating.
Preferably, the organic solvent in the organic solution of tetrabutylammonium chloride is chlorobenzene;
preferably, the concentration of the organic solution of tetrabutylammonium chloride is 1-4mg/mL.
Preferably, the spin coating is dynamic spin coating; the spin coating speed is 4000-7000rpm/min; the spin coating time is 30-60s; the thickness of the spin coating is 1-3nm.
Preferably, the blue perovskite light emitting diode is formed by stacking an anode, a hole injection layer, a light emitting layer, an electron transport layer, an electron injection layer and a cathode from bottom to top.
Further preferably, the anode is at least one of metal, metal oxide, graphene and derivatives thereof; the processing method of the anode comprises sputtering, chemical vapor deposition and spray pyrolysis.
More preferably, the metal oxide includes indium tin oxide conductive film, doped tin oxide zinc oxide, indium gallium zinc oxide.
Further preferably, the hole injection layer is PEDOT: PSS: arg;
further preferably, the hole injection layer is formed into a film by a solution spin coating process; wherein the spin coating speed is 2000-4000rpm/min, the spin coating time is 20-40s, and the annealing is carried out for 5-15min at 150-180 ℃ in the atmosphere after spin coating.
Further preferably, the electron transport layer is TPBi, and the electron injection layer is LiF;
further preferably, the cathode is a metal, metal alloy or metal oxide; the processing method of the cathode comprises electrode evaporation, solution processing and ink-jet printing.
According to the preparation method of the blue perovskite light-emitting diode, the organic solution of tetrabutylammonium chloride is spin-coated on the perovskite light-emitting layer to obtain the light-emitting layer.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, tetrabutylammonium chloride solution is dynamically spin-coated on the perovskite luminescent layer, chloride ions are doped into the green perovskite luminescent layer through an interface ion exchange method, and the band gap is adjusted, so that the blue color blue shift is achieved, and thus, the blue perovskite luminescent diode is realized. The optimized perovskite luminescent layer well realizes blue light emission, and solves the problem that inorganic chlorine is difficult to be dissolved in a precursor in halogen engineering. Meanwhile, the adopted dynamic spin-coating material is tetrabutylammonium chloride which is an ionic compound and is dissolved in chlorobenzene to ionize chloride ions, so that excessive hydrolysis reaction can not occur, and the spectrum conversion from green to blue, which is close to 50nm, is realized efficiently. In addition, the addition of tetrabutylammonium chloride can passivate defects, so that a perovskite luminescent layer with high quality is obtained, and the luminescent efficiency is improved. In a word, the process method provided by the invention is simple, good in repeatability, simple and convenient to operate, wide in material source and low in price, and provides a feasibility idea for producing the blue perovskite light-emitting diode in the future.
Drawings
FIG. 1 is a schematic process diagram of the present invention;
FIG. 2 is a schematic diagram of the device structure of the present invention;
FIG. 3 is a graph of J-V-L curves for perovskite light emitting diodes prepared in examples 1-3 and comparative examples;
FIG. 4 is a J-EQE curve of perovskite light emitting diodes prepared in examples 1-3 and comparative examples;
FIG. 5 is a normalized PL spectrum of perovskite light emitting diodes prepared in examples 1-3 and comparative examples.
Detailed Description
The embodiments of the present invention are described in detail below. The embodiment provides a detailed implementation mode and a specific operation process based on the technical scheme of the invention. The scope of the present invention includes, but is not limited to, the following examples.
The invention provides a method for preparing a blue perovskite light-emitting diode by dynamic spin coating of tetrabutylammonium chloride, which comprises the following steps:
(1) Cleaning the anode substrate;
(2) Preparing a hole injection layer;
dropwise adding a hole injection solution to the upper anode substrate, spin-coating and annealing;
(3) Preparation of perovskite light-emitting layer
Dropwise adding perovskite solution on the hole injection layer film, spin-coating and annealing; dynamically spin-coating the post-treatment solution on the perovskite luminescent layer;
(4) Preparation of an electron transport layer
Evaporating TPBi above the perovskite luminescent layer under high vacuum to obtain an electron transport layer;
(5) Preparation of an electron injection layer
Thermally evaporating and depositing an electron injection layer on the electron transport layer under high vacuum;
(6) Preparation of cathode
And evaporating a cathode with a certain thickness on the electron injection layer.
Further, the anode substrate in the step (1) is one of an ITO substrate, an IZO substrate or an FTO substrate. Preferably, the anode substrate is sequentially put into tetrahydrofuran, isopropanol, washing liquid and deionized water for cleaning, and then put into isopropanol for ultrasonic cleaning, wherein the ultrasonic time is 10-20min each time; after the ultrasonic treatment is completed, the substrate is placed in a baking oven to be dried for more than 2 hours, and then the substrate is subjected to 10-15minUV or O 2 Plasma surface treatment.
Further, the preparation method of the hole injection layer in the step (2) comprises the following steps: to said hole injection layer polymer solution PEDOT: adding 2-6mg/ml arginine (Arg) aqueous solution into PSS, filtering the doped solution by a 0.22 mu m aqueous filter head, dripping the filtered solution on an anode substrate to form a hole injection layer film by a spin coating process, wherein the spin coating speed is 2000-4000rpm/min, the spin coating time is 20-40s, and annealing is carried out for 5-15min at 150-180 ℃ in the atmosphere. Preferably, the spin-coating speed is 3000rpm/min, the dosage is 100ul, the spin-coating time is 30s, the annealing is performed at 160 ℃ for 10min, and the Arg solution concentration is 4mg/ml.
Further, the perovskite solution in the step (3) is composed of PEABr, csBr and PbBr 2 Preparation, wherein PEABr: csBr: pbBr 2 The molar ratio is (0.2-0.6): (1-1.2): 1, preferably the molar ratio is 0.4:1:1. Solutes PEABr, csBr and PbBr 2 The total content of (2) is 5-20wt.%, preferably 10wt.%. The solvent is anhydrous N, N-Dimethylformamide (DMF) or dimethyl sulfoxide (DMSO), preferably DMSO.
The spin coating speed of the perovskite solution is 3000-6000rpm/min, and the preferred spin coating speed is
5000rpm/min. The spin-coating time is 30-60s, preferably 60s. And then annealing for 5-15min at 70-100 ℃ under the nitrogen environment of a glove box. The preferred annealing temperature is 70℃and annealing time is 5min. Preferably, the perovskite solution is used in an amount of 55uL.
The dynamic spin coating solution is tetrabutylammonium chloride solution with a molar concentration of 1-4mg/mL, preferably 3.5mg/mL. The solvent is isopropanol or chlorobenzene, preferably chlorobenzene.
The spin coating speed of the dynamic spin coating solution is 4000-6000rpm/min, and the spin coating speed is preferably 6000rpm/min. The spin-coating time is 30-60min, and the spin-coating time is 60s. Preferably, the dynamic spin coating solution is used in an amount of 55. Mu.L.
Furthermore, the devices in the steps (4), (5) and (6) are all required to be transferred into a vacuum evaporation bin for evaporation of the electron transport layer, the electron injection layer and the cathode. The thickness of the evaporated electron transport layer is 30-40nm, preferably 40nm. The thickness of the evaporated electron injection layer is 0.5-1nm, preferably 1nm. The thickness of the evaporated cathode is 100-150nm, preferably 100nm.
A blue perovskite light-emitting diode prepared by tetrabutylammonium chloride dynamic spin coating comprises a substrate, an anode electrode layer, a hole injection layer, a perovskite light-emitting layer, an electron transport layer, an electron injection layer and a metal cathode from bottom to top. In the step of forming the perovskite light-emitting layer of the device, tetrabutylammonium chloride solution is dynamically spin-coated on the perovskite light-emitting layer to obtain an optimized perovskite light-emitting layer.
Example 1
The device structure of this embodiment is: anode (ITO)/hole injection layer (PEDOT: PSS: arg)/blue perovskite light emitting layer/electron transport layer (TPBi)/electron injection Layer (LiF)/cathode (Al) with emission spectrum peak wavelength of 485nm, as shown in fig. 2.
The preparation process is specifically as follows (refer to fig. 1):
a. the ITO substrate is sequentially placed in tetrahydrofuran, isopropanol, micron-sized semiconductor special washing liquid (mixed solution of ZT-3 electronic washing liquid and deionized water in a volume ratio of 1:100), deionized water and isopropanol for ultrasonic cleaning, and the ultrasonic time is 15min each time. After the ultrasonic treatment is completed, the ITO substrate is placed in an oven to be dried for more than 2 hours for standby.
b. Preparing a solution:
1) Preparing a hole injection layer solution: take 1.5% by mass of PEDOT from a refrigerator at 4 ℃): the PSS aqueous solution is placed for half an hour, and the solution is warmed to room temperature. 4mg/ml Arg aqueous solution was mixed with PEDOT: the aqueous solution of PSS is mixed in a volume ratio of 1:2 to obtain a hole injection layer solution.
2) Preparing perovskite precursor solution: 10wt.% PEABr, FABr and PbBr, respectively 2 Solution (solvent DMSO) followed by PEABr, csBr and PbBr 2 The solution is mixed according to the mol ratio of 0.4:1:1 to obtain perovskite precursor solution.
c. Before spin coating the hole injection layer, the used ITO substrate was UV treated for 10min to improve wettability on the ITO. Filtering the hole injection layer solution through a 0.22 mu m water-based filter head, dripping the solution on an ITO substrate, spin-coating the solution for 30s at a speed of 3000rpm/min by adopting a spin-coating process, and then annealing the solution in air at 150 ℃ for 10min, wherein the thickness of the hole injection layer is 10nm;
d. according to the stacking sequence of the device structure, the substrate is conveyed into a glove box to spin-coat a perovskite layer, the spin-coating amount is 55 mu L, the spin-coating speed is 5000rpm/min, the spin-coating time is 60s, then the substrate is subjected to heat treatment processing, the temperature is 70 ℃, the heating is carried out for 5min, and the thickness of a perovskite luminescent layer is 15nm; after the annealing was completed, a tetrabutylammonium chloride solution (chlorobenzene as a solvent) of 1.5mg/mL was spin-coated on the perovskite light-emitting layer at a thickness of 2nm at 6000rpm/min for 60s.
e. After spin coating of all functional layers, the device is transferred into a vacuum evaporation bin for evaporation of an electron transport layer, an electron injection layer and a cathode. The thickness of the evaporated electron transport layer is 40nm, the thickness of the evaporated electron injection layer is 1nm, and the thickness of the evaporated cathode is 100nm;
f. after the aluminum electrode is evaporated, the device is encapsulated by epoxy resin and a glass cover plate, and the electrical properties (such as current, voltage, brightness, efficiency, color coordinates and the like) of the device are characterized outside a glove box.
Example 2
The device structure of this embodiment is: anode (ITO)/hole injection layer (PEDOT: PSS: arg)/blue perovskite light emitting layer/electron transport layer (TPBi)/electron injection Layer (LiF)/cathode (Al) with emission spectrum peak wavelength of 475nm, as shown in fig. 2.
The preparation process comprises the following steps:
a. the ITO substrate is sequentially placed in tetrahydrofuran, isopropanol, micron-sized semiconductor special washing liquid (mixed solution of ZT-3 electronic washing liquid and deionized water in a volume ratio of 1:100), deionized water and isopropanol for ultrasonic cleaning, and the ultrasonic time is 15min each time. After the ultrasonic treatment is completed, the ITO substrate is placed in an oven to be dried for more than 2 hours for standby.
b. Preparing a solution:
1) Preparing a hole injection layer solution: take 1.5% by mass of PEDOT from a refrigerator at 4 ℃): the PSS aqueous solution is placed for half an hour, and the solution is warmed to room temperature. 4mg/ml Arg aqueous solution was mixed with PEDOT: the aqueous solution of PSS is mixed in a volume ratio of 1:2 to obtain a hole injection layer solution.
2) Preparing perovskite precursor solution: 10wt.% of PEABr, FABr and PbBr2 solutions (the solvent is DMSO) were respectively prepared, and then the PEABr, csBr and PbBr2 solutions were mixed in a molar ratio of 0.4:1:1 to obtain a perovskite precursor solution.
c. Before spin coating the hole injection layer, the used ITO substrate was UV treated for 10min to improve wettability on the ITO. Filtering the hole injection layer solution through a 0.22 mu m water-based filter head, dripping the solution on an ITO substrate, spin-coating the solution for 30s at a speed of 3000rpm/min by adopting a spin-coating process, and then annealing the solution in air at 150 ℃ for 10min, wherein the thickness of the hole injection layer is 10nm;
d. according to the stacking sequence of the device structure, the substrate is conveyed into a glove box to spin-coat a perovskite layer, the spin-coating amount is 55 mu L, the spin-coating speed is 5000rpm/min, the spin-coating time is 60s, then the substrate is subjected to heat treatment processing, the temperature is 70 ℃, the heating is carried out for 5min, and the thickness of a perovskite luminescent layer is 15nm; after the annealing was completed, 2.5mg/mL of tetrabutylammonium chloride solution (chlorobenzene as solvent) was spin-coated on the perovskite light-emitting layer to a thickness of 2nm at 6000rpm/min for 60s.
e. After spin coating of all functional layers, the device is transferred into a vacuum evaporation bin for evaporation of an electron transport layer, an electron injection layer and a cathode. The thickness of the evaporated electron transport layer is 40nm, the thickness of the evaporated electron injection layer is 1nm, and the thickness of the evaporated cathode is 100nm;
f. after the aluminum electrode is evaporated, the device is encapsulated by epoxy resin and a glass cover plate, and the electrical properties (such as current, voltage, brightness, efficiency, color coordinates and the like) of the device are characterized outside a glove box.
Example 3
The device structure of this embodiment is: anode (ITO)/hole injection layer (PEDOT: PSS: arg)/deep blue perovskite light emitting layer/electron transport layer (TPBi)/electron injection Layer (LiF)/cathode (Al) with emission spectrum peak wavelength of 465nm, as shown in fig. 2.
The preparation process comprises the following steps:
a. the ITO substrate is sequentially placed in tetrahydrofuran, isopropanol, micron-sized semiconductor special washing liquid (mixed solution of ZT-3 electronic washing liquid and deionized water in a volume ratio of 1:100), deionized water and isopropanol for ultrasonic cleaning, and the ultrasonic time is 15min each time. After the ultrasonic treatment is completed, the ITO substrate is placed in an oven to be dried for more than 2 hours for standby.
b. Preparing a solution:
1) Preparing a hole injection layer solution: take 1.5% by mass of PEDOT from a refrigerator at 4 ℃): the PSS aqueous solution is placed for half an hour, and the solution is warmed to room temperature. 4mg/ml Arg aqueous solution was mixed with PEDOT: the aqueous solution of PSS is mixed in a volume ratio of 1:2 to obtain a hole injection layer solution.
2) Preparing perovskite precursor solution: 10wt.% of PEABr, FABr and PbBr2 solutions (the solvent is DMSO) were respectively prepared, and then the PEABr, csBr and PbBr2 solutions were mixed in a molar ratio of 0.4:1:1 to obtain a perovskite precursor solution.
c. Before spin coating the hole injection layer, the used ITO substrate was UV treated for 10min to improve wettability on the ITO. Filtering the hole injection layer solution through a 0.22 mu m water-based filter head, dripping the solution on an ITO substrate, spin-coating the solution for 30s at a speed of 3000rpm/min by adopting a spin-coating process, and then annealing the solution in air at 150 ℃ for 10min, wherein the thickness of the hole injection layer is 10nm;
d. according to the stacking sequence of the device structure, the substrate is conveyed into a glove box to spin-coat a perovskite layer, the spin-coating amount is 55 mu L, the spin-coating speed is 5000rpm/min, the spin-coating time is 60s, then the substrate is subjected to heat treatment processing, the temperature is 70 ℃, the heating is carried out for 5min, and the thickness of a perovskite luminescent layer is 15nm; after the annealing was completed, a tetrabutylammonium chloride solution (chlorobenzene as a solvent) of 3.5mg/mL was spin-coated on the perovskite light-emitting layer at a thickness of 2nm at 6000rpm/min for 60s.
e. After spin coating of all functional layers, the device is transferred into a vacuum evaporation bin for evaporation of an electron transport layer, an electron injection layer and a cathode. The thickness of the evaporated electron transport layer is 40nm, the thickness of the evaporated electron injection layer is 1nm, and the thickness of the evaporated cathode is 100nm;
f. after the aluminum electrode is evaporated, the device is encapsulated by epoxy resin and a glass cover plate, and the electrical properties (such as current, voltage, brightness, efficiency, color coordinates and the like) of the device are characterized outside a glove box.
Comparative example
In this comparative example, only the perovskite light-emitting layer in step c is different from the example, in which case the dynamic spin-coating of the tetrabutylammonium chloride post-treatment solution was not performed, and the annealed perovskite thin film was directly used as the light-emitting layer. The other steps are the same as those of embodiment 1, and will not be repeated here.
Performance test:
1) The perovskite light emitting diodes of examples 1 to 3 and comparative examples were tested for electrical properties such as current density, voltage, luminance, EQE, and color coordinates, and the resulting J-V-L curves are shown in fig. 3 and J-EQE curves are shown in fig. 4.
As can be seen from fig. 3: after the TBAC dynamic spin coating treatment of the perovskite film, as the TBAC concentration increases, both the current density and brightness decrease, as the incorporation of chloride ions affects the injection and transport of carriers.
As can be seen from fig. 4: after TBAC dynamic spin coating treatment of the perovskite film, the EQE increases and then decreases with increasing TBAC concentration. This is because a small amount of TBAC can well passivate defects, inhibit non-radiative recombination, and improve device performance, but when more chlorine ions are incorporated, the performance is significantly reduced due to lower defect tolerance of chlorine.
3) The normalized PL spectrum of the perovskite light emitting diode after TBAC dynamic spin coating treatment is shown in fig. 5.
As can be seen from fig. 5: after TBAC dynamic spin coating treatment, the perovskite film can realize luminescence in different wave bands from sky blue light to deep blue light.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but not in limitation thereof. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.

Claims (10)

1. The blue perovskite light-emitting diode is characterized by comprising a light-emitting layer, wherein the light-emitting layer is a perovskite light-emitting layer spin-coated with an organic solution of tetrabutylammonium chloride.
2. The blue perovskite light emitting diode according to claim 1, wherein the perovskite light emitting layer is composed of phenethyl ammonium bromide, cesium bromide and lead bromide in a molar ratio of 0.2-0.6:1.0-1.2:1; the thickness of the perovskite luminescent layer is 10-20nm;
the perovskite light-emitting layer is formed by spin coating of a perovskite precursor solution; wherein the perovskite precursor solution is composed of PEABr, csBr and PbBr 2 The preparation, spin coating speed is 3000-6000rpm/min, spin coating time is 30-60s, and annealing is carried out for 1-10min at 60-90 ℃ under protective atmosphere after spin coating.
3. The blue perovskite light emitting diode according to claim 1, wherein the organic solvent in the organic solution of tetrabutylammonium chloride is chlorobenzene;
the concentration of the organic solution of tetrabutylammonium chloride is 1-4mg/mL.
4. The blue perovskite light emitting diode of claim 1, wherein the spin coating is dynamic spin coating; the spin coating speed is 4000-7000rpm/min; the spin coating time is 30-60s; the thickness of the spin coating is 1-3nm.
5. The blue perovskite light emitting diode according to claim 1, wherein the blue perovskite light emitting diode is formed by stacking an anode, a hole injection layer, a light emitting layer, an electron transport layer, an electron injection layer, and a cathode from bottom to top.
6. The blue perovskite light emitting diode of claim 5, wherein the anode is at least one of a metal, a metal oxide, and graphene and derivatives thereof; the processing method of the anode comprises sputtering, chemical vapor deposition and spray pyrolysis.
7. The blue perovskite light emitting diode of claim 6, wherein the metal oxide comprises indium tin oxide conductive film, doped tin dioxide zinc oxide, indium gallium zinc oxide.
8. The blue perovskite light emitting diode of claim 5, wherein the hole injection layer is PEDOT: PSS: arg;
the hole injection layer is formed into a film by adopting a solution spin coating process; wherein the spin coating speed is 2000-4000rpm/min, the spin coating time is 20-40s, and the annealing is carried out for 5-15min at 150-180 ℃ in the atmosphere after spin coating.
9. The blue perovskite light emitting diode of claim 5, wherein the electron transport layer is TPBi and the electron injection layer is LiF;
the cathode is metal, metal alloy or metal oxide; the processing method of the cathode comprises electrode evaporation, solution processing and ink-jet printing.
10. The method for producing a blue perovskite light emitting diode according to any one of claims 1 to 9, wherein an organic solution of tetrabutylammonium chloride is spin-coated on the perovskite light emitting layer to obtain the light emitting layer.
CN202310178340.2A 2023-02-28 2023-02-28 Blue perovskite light-emitting diode and preparation method thereof Pending CN116471859A (en)

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