CN116454074A

CN116454074A - Light-emitting module

Info

Publication number: CN116454074A
Application number: CN202210018395.2A
Authority: CN
Inventors: 林振端; 曾志洋; 洪崇得; 时军朋; 王杰凌; 陈伟鸿; 余长治; 徐宸科
Original assignee: Hubei San'an Photoelectric Co ltd
Current assignee: Hubei San'an Photoelectric Co ltd
Priority date: 2022-01-07
Filing date: 2022-01-07
Publication date: 2023-07-18

Abstract

The application discloses a light emitting module includes: a plurality of light emitting elements arranged at intervals, the light emitting elements comprising opposing first and second surfaces and a side between the first and second surfaces, the first surface having a first electrode and the second surface having a second electrode; a filling layer formed between adjacent light emitting elements, the first filling layer having a first opening; the extraction electrode is formed in the first opening and is electrically connected with the first electrode; a wiring layer formed on the filling layer and electrically connected to the light emitting element; and a conductive pad formed on a side of the wiring layer away from the light emitting element and electrically connected to the wiring layer.

Description

Light-emitting module

Technical Field

The present disclosure relates to semiconductor technology, and particularly to a light emitting module.

Background

Light emitting diodes are widely used in various fields such as display devices, lamps for vehicles, general illumination lamps, etc. due to their characteristics of high reliability, long life span, and low power consumption, for example, they can be used as backlight sources for various display devices. In order to perform effective mechanical protection on the light emitting diode, the light emitting diode is often packaged and formed into a light emitting module, which can enhance heat dissipation, improve light extraction efficiency, and optimize light beam distribution. However, the reliability of the light emitting module obtained by the existing method is poor, and how to obtain a light emitting module with high reliability is still a difficult problem.

Disclosure of Invention

A light emitting module according to an embodiment of the present disclosure may include: a plurality of light emitting elements arranged at intervals, the light emitting elements comprising opposing first and second surfaces and a side between the first and second surfaces, the first surface having a first electrode and the second surface having a second electrode; a filling layer formed between adjacent light emitting elements, the first filling layer having a first opening; the extraction electrode is formed in the first opening and is electrically connected with the first electrode; a wiring layer formed on the filling layer and electrically connected to the light emitting element; and a conductive pad formed on a side of the wiring layer away from the light emitting element and electrically connected to the wiring layer.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered limiting the scope, and that other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a plan view of a light emitting module according to a first embodiment of the present application;

FIG. 2 is a cross-sectional view taken along line I-I' of FIG. 1;

FIG. 3 is a cross-sectional view of a light emitting module according to a second embodiment of the present application;

FIG. 4 is a cross-sectional view of a light emitting module according to a third embodiment of the present disclosure;

fig. 5 to 11 are cross-sectional views illustrating respective manufacturing processes of the light emitting module according to the fourth embodiment of the present application.

Reference numerals:

100. a transparent layer; 1001. a first transparent layer; 1002. a second transparent layer; 120 grooves; 200. a light emitting element; 201. a first light emitting element; 202. a second light emitting element; 203. a third light emitting element; 210. a filling layer; 220. a first opening; 300. a wiring layer; 301. a first sub-wiring; 302. a second sub-wiring; 303. a third sub-wiring; 304. a fourth sub-wiring; 310. an extraction electrode; 330 an insulating layer; 400. conducting resin; 500. a conductive pad; 501. a first bonding pad; 502. a second bonding pad; 503. a third bonding pad; 504. a fourth pad; 510. a conductive layer; 520. an adhesive layer; 530. a protective layer; 600. an encapsulation layer; 700. a seed layer.

Detailed Description

Other advantages and effects of the present application will become apparent to those skilled in the art from the present disclosure, when the following description of the present application is taken in conjunction with the accompanying drawings. The present application may be carried out or operated in different embodiments, and various modifications or changes may be made in the details of the application based on different points of view and applications without departing from the spirit of the application.

In the description of the present application, it should be noted that, the azimuth or positional relationship indicated by the terms "upper" and "lower" and the like are based on the azimuth or positional relationship shown in the drawings, or the azimuth or positional relationship that is commonly put when the product of the application is used, only for convenience of description of the present application and simplification of the description, and are not to indicate or imply that the apparatus or element referred to must have a specific azimuth, be configured and operated in a specific azimuth, and therefore should not be construed as limiting the present application. Furthermore, the terms "first" and "second," etc. are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.

Fig. 1 is a schematic plan view for explaining a light emitting module of a first embodiment of the present application, and fig. 2 is a schematic sectional view taken along a line I-I' of fig. 1.

Referring to fig. 1 and 2, the light emitting module includes a plurality of light emitting elements 200 arranged at intervals and having different wavelength ranges, and gaps between adjacent light emitting elements 200 are filled with a filling layer 210 to electrically isolate the adjacent light emitting elements 200. The wiring layer 300 is formed on the plurality of light emitting elements 200 and is used for electrical connection with the light emitting elements 200. The conductive pad 500 is formed at a side of the wiring layer 300 remote from the light emitting element 200 and is electrically connected to the light emitting element 200 through the wiring layer 300.

In one embodiment, the light emitting device 200 is mainly a micro-scale light emitting diode, and the width and length thereof are in the range of 2-5 μm, 5-10 μm, 10-20 μm, 20-50 μm or 50-100 μm, and the thickness thereof is in the range of 2-15 μm, preferably 5-10 μm. In this embodiment, the light emitting module includes a first light emitting element 201, a second light emitting element 202, and a third light emitting element 203.

Specifically, each light emitting element 200 includes a semiconductor stacked layer, which may include a first semiconductor layer, a second semiconductor layer, and an active layer disposed therebetween, which are sequentially arranged, wherein the first semiconductor layer is an N-type semiconductor layer, the second semiconductor layer is a P-type semiconductor layer, and the active layer is a multi-layered quantum well layer, which may provide radiation of red light or green light or blue light. The N-type semiconductor layer, the multi-layer quantum well layer, and the P-type semiconductor layer are only basic constituent units of the light emitting element 200, and the light emitting element 200 may further include other functional structure layers having an optimization effect on the performance of the light emitting element 200.

The first light emitting element 201, the second light emitting element 202, and the third light emitting element 203 respectively radiate light of different wavelength ranges, for example, the first light emitting element 201 radiates blue light, the second light emitting element 202 radiates green light, and the third light emitting element 203 radiates red light. In an embodiment, the different light emitting elements 200 may have different semiconductor stacked layers so as to directly radiate light in different wavelength ranges, and specific materials of the semiconductor stacked layers are selected according to the wavelength of the radiated light, which includes but is not limited to aluminum gallium arsenide, gallium arsenide phosphide, aluminum gallium indium phosphide, gallium nitride, indium gallium nitride, zinc selenide, or gallium phosphide. In another embodiment, the different light emitting elements 200 may have the same semiconductor stacked layers, for example, the semiconductor stacked layers in the first light emitting element 201, the second light emitting element 202, and the third light emitting element 203 all radiate blue light, and a wavelength conversion layer is disposed on the light emitting surface of the second light emitting element 202 to convert the radiated blue light into green light, and a wavelength conversion layer is disposed on the light emitting surface of the third light emitting element 203 to convert the radiated blue light into red light.

Each light emitting element 200 further includes a first electrode and a second electrode. The first electrode is formed on the first semiconductor layer and electrically connected to the first semiconductor layer, and the second electrode is formed on the second semiconductor layer and electrically connected to the second semiconductor layer. In another embodiment, the first electrode is formed on and electrically connected to the second semiconductor layer, and the second electrode is formed on and electrically connected to the first semiconductor layer. Preferably, at least one light emitting element may have a shape of a vertical light emitting diode. In the present embodiment, each light emitting element may have a first surface S100 and a second surface S200 disposed opposite to each other, a first electrode disposed on the first surface, and a side surface S300 disposed between the first surface S100 and the second surface S200, and a second electrode disposed on the second surface.

In one embodiment, referring to fig. 1 and 2, the light emitting module further includes a transparent layer 100, the light emitting element 200 is disposed on the transparent layer 100, and a surface of the transparent layer 100 away from the light emitting element 200 is a light emitting surface of the light emitting module, that is, light emitted by the light emitting element 200 is emitted to the outside through the transparent layer 100. The transparent layer 100 has a light transmittance of 60% or more in the visible light range.

In one embodiment, referring to fig. 2, the transparent layer 100 includes a first transparent layer 1001 and a second transparent layer 1002, the second transparent layer 1002 being located between the first transparent layer 1001 and the light emitting element 200.

The first transparent layer 1001 may be selected from inorganic light-transmitting materials such as glass, transparent ceramics, and sapphire, and may be selected from thermosetting organic materials such as epoxy, silica gel, and polyimide, which are relatively low in cost. Preferably, the light emitting module needs to have a certain thickness for the client to use, so the thickness of the first transparent layer 1001 is preferably greater than 10 μm, and particularly preferably 30 μm to 50 μm, 50 μm to 100 μm or 100 μm to 300 μm.

The second transparent layer 1002 is positioned between the first transparent layer 1001 and the light emitting element 200 so that the light emitting element 200 can be adhered to the first transparent layer 1001 through the second transparent layer 1002. The second transparent layer 1002 may entirely cover the entire surface of the first transparent layer 1001, but is not limited thereto, and may be located only under the light emitting element 200 so that the light emitting element 200 can be adhered to the transparent layer 1001 through the second transparent layer 1002.

The second transparent layer 1002 has a groove 120 for the subsequent formation of the extraction electrode 310, and for this purpose, the second transparent layer 1002 may be subjected to a patterning process to form the groove 120. A part of the surface of the light emitting element 200 is disposed on the second transparent layer 1002 and a part of the surface is disposed on the groove 120. Preferably, the first electrode on the light emitting element 200 is at least partially disposed on the groove 120, such that the extraction electrode 310 formed later is electrically connected to the first electrode through the groove 120.

In one embodiment, referring to fig. 1 and 2, the light emitting module further includes a filling layer 210, and the filling layer 210 is filled between the adjacent light emitting elements 200 or around the sidewalls of the light emitting elements 200, to prevent color mixing or light interference between the adjacent light emitting elements 200, so as to improve the contrast ratio of the light emitting module. The filling layer 210 is provided as a black glue layer absorbing light.

The filling layer 210 has a plurality of first openings 220 around the light emitting element 200, and preferably, the first openings 220 expose sidewalls of the light emitting element and communicate with the grooves 120 of the second transparent layer 1002. The first opening 220 has a pore size of 2-20 μm.

The thickness of the light emitting element 200 is preferably in the range of 2 to 15 μm, and the interval between adjacent light emitting elements 200 is less than 50 μm, so that it is preferable to cure with a material having good fluidity when forming the filling layer 210. The particle size of the black filling component filled in the filling layer 210 is preferably not more than 1/10 of the thickness of the light emitting element 200, which can avoid the problem that the coating effect of the filling layer 210 on the light emitting element 200 is poor due to the overlarge particle size of the black filling component, and thus the contrast of the light emitting module is affected. The filling layer 210 may be specifically a member formed by dispersing a black filling component having a particle size of not more than 1 μm in a transparent or semitransparent material such as silica gel, epoxy resin, polyimide, low temperature glass, polysiloxane, polysilazane, etc., and the black filling component in the filling layer 210 includes, but is not limited to, carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder, etc. The particle size range of the black filler is preferably 10 to 100nm, or 100 to 200nm, or 200 to 300nm, or 300 to 500nm. Black dye may also be used for the fill layer 210.

The filling layer 210 covers at least 50% of the sidewalls of the light emitting elements 200 near the light emitting surface, preferably covers all the sidewalls of the light emitting elements 200, so as to prevent color mixing or light interference between adjacent light emitting elements 200 and improve the contrast of the light emitting module. Alternatively, the thickness of the filling layer 210 may be greater than that of the light emitting element 200, and light interference caused by light leakage at the bottom of the light emitting element 200 may be prevented. The thickness of the filler layer 210 is preferably less than 15 μm.

In one embodiment, referring to fig. 1 and 2, the extraction electrode 310 is formed in the groove 120 and the first opening 220 to be electrically connected with the first electrode of the light emitting element 200. The extraction electrode 310 may draw a first electrode disposed opposite to a second electrode of the light emitting element 200 to be at the same level as the second electrode so that a subsequent wiring layer forms an electrical connection with the light emitting element.

The extraction electrode 310 may use a Transparent Conductive Oxide (TCO) material such as Indium Tin Oxide (ITO), zinc doped indium tin oxide (ZITO), zinc Indium Oxide (ZIO), gallium Indium Oxide (GIO), zinc Tin Oxide (ZTO), fluorine doped tin oxide (FTO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), in4Sn3O12, or Zn (1-x) MgxO (zinc magnesium oxide, 0.ltoreq.x.ltoreq.1). The extraction electrode 310 may employ a light-transmitting polymer resin including at least one of Ag nanowires and Carbon Nanotubes (CNTs) and having conductivity. The extraction electrode 310 may be prepared by magnetron sputtering, evaporation, or the like.

In one embodiment, referring to fig. 1 and 2, a wiring layer 300 is formed over the filling layer 210 and is used for electrical connection with the light emitting element 200. The wiring layer 300 includes a plurality of wirings, and the periphery of the wiring layer is filled with an insulating layer 330 to electrically isolate adjacent wirings.

The wiring layer 300 includes a first sub-wiring 301, a second sub-wiring 302, a third sub-wiring 303, and a fourth sub-wiring 304, wherein the first sub-wiring 301 serves as a common wiring, second electrodes in the first light emitting element 201, the second light emitting element 202, and the third light emitting element 203 are commonly connected to the first sub-wiring 301, an extraction electrode 310 in the first light emitting element 201 is connected to the second sub-wiring 302, an extraction electrode 310 in the second light emitting element 202 is connected to the third sub-wiring 303, and an extraction electrode 310 in the third light emitting element 203 is connected to the fourth sub-wiring 304. The wiring layer 300 may be formed together on the filling layer 210.

The wiring layer 300 has opposite upper and lower surfaces, wherein the lower surface of the wiring layer 300 is in contact with the filling layer 210 and the light emitting element 200, and the upper surface of the wiring layer 300 is used to form the insulating layer 330.

The wiring layer 300 may be a single layer or a plurality of layers made of at least one material of titanium, copper, chromium, nickel, gold, platinum, aluminum, titanium nitride, tantalum, or the like. In this embodiment, the wiring layer 300 may include a first layer in direct contact with the light emitting element 200 and a second layer formed over the first layer. The first layer is used to adhere the second layer to the light emitting element 200 and the filling layer 210, and the second layer mainly plays a conductive role. The material of the first layer includes, but is not limited to, one or more of titanium, nickel, titanium nitride, tantalum nitride, or tantalum, and the material of the second layer includes, but is not limited to, one or more of copper, aluminum, or gold. The wiring layer 300 may be prepared by sputtering, evaporation, or the like.

Preferably, the thickness of the wiring layer 300 is preferably 50nm to 1000nm, wherein the thickness of the first layer is preferably 10 nm to 200nm, the thickness of the second layer is preferably 200nm to 800nm, and the thickness of the first layer is smaller than the thickness of the second layer.

As an alternative embodiment, the wiring layer 300 and the extraction electrode 310 may be fabricated In the same process using a Transparent Conductive Oxide (TCO) material such as Indium Tin Oxide (ITO), zinc-doped indium tin oxide (ZITO), zinc Indium Oxide (ZIO), gallium Indium Oxide (GIO), zinc Tin Oxide (ZTO), fluorine-doped tin oxide (FTO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), in4Sn3O12, or Zn (1-x) MgxO (zinc magnesium oxide, 0.ltoreq.x.ltoreq.1).

In one embodiment, referring to fig. 1 and 2, a conductive pad 500 is formed at a side of the wiring layer 300 remote from the light emitting element 200 and is electrically connected to the light emitting element 200 through the wiring layer 300.

The conductive pad 500 includes a first pad 501, a second pad 502, a third pad 503, and a fourth pad 504, the first pad 501 serving as a common pad to which first electrodes of the first light emitting element 201, the second light emitting element 202, and the third light emitting element 203 are commonly connected through a first sub-wiring 301, the second electrode of the first light emitting element 201 is connected to the second pad 502 through a second sub-wiring 302, the second electrode of the second light emitting element 202 is connected to the third pad 503 through a third sub-wiring 303, and the second electrode of the third light emitting element 203 is connected to the fourth pad 504 through a fourth sub-wiring 304.

In one embodiment, the conductive pad 500 includes a conductive layer 510, and the conductive layer 510 may be a single layer or multiple layers made of at least one material selected from titanium, copper, gold, platinum, etc., and preferably has a thickness of 10 to 50 μm, for example, 20 μm, 30 μm, 40 μm.

As an alternative embodiment, the conductive pad 500 includes a conductive layer 510 and a protective layer 530 sequentially formed over the wiring layer 300. Before the light emitting module is mounted on the display device, the protective layer 530 completely covers the upper surface of the conductive layer 510, so that the conductive layer 510 can be effectively prevented from being oxidized, and the stability of the light emitting module can be improved; when the light emitting module is mounted on a display device, the protective layer 530 is damaged or removed. The protective layer 530 does not affect the bonding property and conductivity of the conductive pad 500, and its thickness is preferably 25 to 50nm.

The protective layer 530 may be made of metal materials such as gold and platinum, and the conductive pad 500 is soldered to the circuit board at a predetermined temperature during the mounting of the light emitting module to the display device by using a soldering material, which flows and deforms during the soldering process, so that the deformation of the soldering material may damage the integrity of the protective layer 530 made of metal materials such as gold and platinum.

Alternatively, the protective layer 530 may be an organic material such as OSP, which is dissolved and removed by soldering the conductive pad 500 and the circuit board with a soldering material at a predetermined temperature during the mounting of the light emitting module to the display device.

Preferably, an adhesive layer 520 is further disposed between the conductive layer 510 and the protective layer 530. The adhesive layer 520 may be a single layer or a plurality of layers made of at least one material of chromium, titanium, nickel, tantalum nitride, tantalum, etc. The thickness of the adhesive layer 520 is preferably 3 to 5 μm.

In one embodiment, referring to fig. 2, the encapsulation layer 600 fills the perimeter of the conductive pads 500 to electrically isolate adjacent sub-pads from each other. The encapsulation layer 600 is provided as a glue layer absorbing light, and particularly preferably is a member formed by dispersing a black filling component including, but not limited to, carbon black, titanium nitride, iron oxide, ferroferric oxide, iron powder, and the like in a transparent or translucent material such as silica gel, epoxy, polyimide, low temperature glass, polysiloxane, polysilazane, and the like.

Since the thickness of the light emitting element 200 and the wiring layer 300 is thin, the encapsulation layer 600 preferably has a thickness to protect the light emitting element 200 and the wiring layer 300 from external factors, and the thickness of the encapsulation layer 600 is preferably more than 20 μm, and at this time, the thickness of the conductive pad 500 is also more than 20 μm. The encapsulation layer 600 is doped with doped particles having a particle diameter of more than 1 μm, such as silicon dioxide, which can enhance the mechanical properties of the encapsulation layer 600, thereby better protecting the light emitting element 200 and the wiring layer 300.

Preferably, the surface of the encapsulation layer 600 remote from the wiring layer 300 is flush with the surface of the conductive layer 510 in the conductive pad 500 remote from the wiring layer 300.

Preferably, the thickness of the conductive pad 500 is preferably 5 μm or more, which may be formed by electroplating.

Example two

Fig. 3 is a schematic cross-sectional view for explaining a light emitting module of a second embodiment of the present application. Unlike the first embodiment, the following is: the light emitting module may include an insulating layer 330 and a seed layer 700.

Referring to fig. 3, an insulating layer 330 is located on the upper surface of the wiring layer 300 and fills the periphery of the wiring in the wiring layer 300. The insulating layer 330 is opened with a via hole above the wiring layer 300 for forming the conductive pad 500. The number of the through holes is the same as that of the conductive pads 500, that is, one through hole corresponds to one conductive pad 500.

The insulating layer 330 may be a member formed of epoxy, polysiloxane, or photoresist, so as to prevent the wiring layer 300 from being oxidized, and electrically isolate different wirings, thereby avoiding leakage failure of the light emitting module.

The upper surface of the wiring layer 300 is provided with a seed layer 700, and the seed layer 700 conducts electricity to prepare the conductive pad 500 by electroplating. The seed layer 700 may be a single layer or a plurality of layers made of at least one material of titanium, copper, gold, platinum. In this embodiment, the seed layer 700 is preferably a Ti/Cu stack, and the thickness thereof is preferably 100-2000 nm.

Example III

Fig. 4 is a schematic cross-sectional view for explaining a light emitting module of a third embodiment of the present application. The differences from the above embodiments are: the light emitting module may include a conductive paste 400 between the second transparent layer 1002 and the light emitting element 200, the conductive paste 400 being electrically connected to the first electrode of the light emitting element 200. The filling layer 210 has a plurality of first openings 220 around the light emitting element 200, and preferably, the first openings 220 expose the sidewalls of the light emitting element and the surface of the conductive paste 400. The first opening 220 has a pore size of 2-20 μm. The extraction electrode 310 is connected to the conductive paste through the first opening 220 and electrically connected to the first electrode of the light emitting element 200. The extraction electrode 310 may draw a first electrode disposed opposite to a second electrode of the light emitting element 200 to be at the same level as the second electrode so that a subsequent wiring layer forms an electrical connection with the light emitting element. Preferably, the area of the conductive paste 400 in the vertical direction is larger than the area of the light emitting element 200 in the vertical direction.

Example IV

The embodiment discloses a manufacturing method of a light-emitting module. The following detailed description refers to the accompanying drawings.

S1, as shown in fig. 5, a first transparent layer 1001 and a second transparent layer 1002 are provided, and the first transparent layer 1001 and the second transparent layer 1002 can be provided with reference to embodiment 1. The first transparent layer 1001 includes a first surface and a second surface, where the first surface is a light-emitting surface. The second transparent layer 1002 covers the second surface of the first transparent layer 1001. Etching is performed on the second transparent layer 1002 to form the grooves 120.

S2, as shown in fig. 6, a series of arrays of light emitting elements 200 are fixed on the grooves 120. The array comprises a series of light emitting cells, each corresponding to a pixel, comprising at least three light emitting elements 200 radiating light of different wavelength ranges. A part of the surface of the light emitting element 200 is disposed on the second transparent layer 1002 and a part of the surface is disposed on the groove 120.

S3, as shown in fig. 7, a filling layer 210 is formed around the light emitting elements 200, and the filling layer 210 is filled between adjacent light emitting elements 200 or around the sidewalls of the light emitting elements 200.

S4, as shown in fig. 8, etching is performed on the filling layer 210 to form a first opening 220, and in a preferred embodiment, the first opening 220 exposes a sidewall of the light emitting element and is in communication with the groove 120 of the second transparent layer 1002.

S5, as shown in fig. 9, an extraction electrode 310 is formed in the recess 120 and the first opening 220 using an ion-membrane technology. The extraction electrode 310 is electrically connected to the first electrode of the light-emitting element 200. The extraction electrode 310 may draw a first electrode disposed opposite to a second electrode of the light emitting element 200 to be at the same level as the second electrode so that a subsequent wiring layer forms an electrical connection with the light emitting element. The extraction electrode 310 may be prepared by magnetron sputtering, evaporation, or the like.

S6, as shown in fig. 10, a wiring layer 300 is formed on the filling layer 210, and the wiring layer 300 is electrically connected to the extraction electrode 220 and the second electrode of the light-emitting element 200. The wiring layer 300 may be prepared by magnetron sputtering, evaporation, or the like.

S7, as shown in fig. 11, a conductive pad 500 is formed on the wiring layer 300, and the encapsulation layer 600 is filled around the conductive pad 500. The conductive pad 500 is formed on the wiring layer 300 by electroplating.

The foregoing is merely a preferred embodiment of the present application, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present application, and these modifications and substitutions should also be considered as being within the scope of the present application.

Claims

1. A light emitting module, comprising:

a plurality of light emitting elements arranged at intervals, the light emitting elements comprising opposing first and second surfaces and a side between the first and second surfaces, the first surface having a first electrode and the second surface having a second electrode;

a filling layer formed between adjacent light emitting elements, the first filling layer having a first opening;

the extraction electrode is formed in the first opening and is electrically connected with the first electrode;

a wiring layer formed on the filling layer and electrically connected to the light emitting element;

and a conductive pad formed on a side of the wiring layer away from the light emitting element and electrically connected to the wiring layer.

2. The light emitting module of claim 1 further comprising a transparent layer on which the light emitting element is disposed, the transparent layer comprising a first transparent layer and a second transparent layer, the second transparent layer being interposed between the first transparent layer and the light emitting element, the first transparent layer having a thickness greater than 10 μm and the second transparent layer having a thickness less than 10 μm.

3. The light emitting module of claim 2 wherein the second transparent layer has a recess, the light emitting element first surface portion is disposed on the second transparent layer, and the light emitting element first surface portion is disposed on the recess.

4. The lighting module of claim 2, wherein the recess communicates with the first opening.

5. The light emitting module of claim 2, wherein the first opening exposes a side of the light emitting element.

6. The light-emitting module according to claim 2, wherein the extraction electrode is in electrical contact with the light-emitting element first electrode through the groove.

7. The light emitting module of claim 1, wherein the extraction electrode is indium tin oxide, zinc doped indium tin oxide, zinc indium oxide, gallium indium oxide, zinc tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, or gallium doped zinc oxide.

8. The light emitting module of claim 1, wherein the wiring layer is indium tin oxide, zinc doped indium tin oxide, zinc indium oxide, gallium indium oxide, zinc tin oxide, fluorine doped tin oxide, aluminum doped zinc oxide, or gallium doped zinc oxide.

9. The light emitting module of claim 1, wherein the wiring layer comprises a first layer and a second layer, wherein a material of the first layer comprises one or more of titanium, nickel, titanium nitride, tantalum nitride, or tantalum, and wherein a material of the second layer comprises one or more of copper, aluminum, or gold.

10. The light emitting module of claim 1, wherein the thickness of the wiring layer is 50-1000 nm.

11. The light-emitting module according to claim 1, wherein the filler layer contains a black filler component having a particle diameter of 1/10 th or less of the thickness of the light-emitting element, or having a particle diameter of 1 μm or less.

12. The light emitting module of claim 1, wherein the filler layer has a thickness of 15 μm or less.

13. The light emitting module of claim 2 further comprising a conductive paste positioned between the light emitting element and the second transparent layer, the conductive paste being electrically connected to the light emitting element first electrode.

14. The light-emitting module according to claim 13, wherein an area of the conductive paste in a vertical direction is larger than an area of the light-emitting element in a vertical direction.

15. The light emitting module of claim 13, wherein the extraction electrode is electrically connected to the conductive paste through the first opening.