CN116453931A - Wafer processing apparatus - Google Patents

Wafer processing apparatus Download PDF

Info

Publication number
CN116453931A
CN116453931A CN202310678149.4A CN202310678149A CN116453931A CN 116453931 A CN116453931 A CN 116453931A CN 202310678149 A CN202310678149 A CN 202310678149A CN 116453931 A CN116453931 A CN 116453931A
Authority
CN
China
Prior art keywords
gas
cavity
processing apparatus
wafer processing
wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN202310678149.4A
Other languages
Chinese (zh)
Other versions
CN116453931B (en
Inventor
崔强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
Original Assignee
Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Tianxin Micro Semiconductor Equipment Co ltd filed Critical Jiangsu Tianxin Micro Semiconductor Equipment Co ltd
Priority to CN202310678149.4A priority Critical patent/CN116453931B/en
Publication of CN116453931A publication Critical patent/CN116453931A/en
Application granted granted Critical
Publication of CN116453931B publication Critical patent/CN116453931B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32981—Gas analysis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/3299—Feedback systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention relates to a wafer processing apparatus comprising: the cavity is used for carrying out process treatment on the surface of the wafer by introducing process gas; the base is arranged in the cavity and used for supporting the wafer; a liner disposed on an inner surface of a sidewall of the chamber and surrounding the susceptor for uniformly distributing the process gas on the wafer surface, and the process gas after the process treatment is exhausted out of the chamber; and the monitoring device is communicated with the extraction opening arranged on the side wall of the cavity and is used for acquiring the process gas in the cavity through the extraction opening and analyzing the gas component. The invention can monitor the gas in the cavity in situ in the process, and has little influence on the process stability; and the process air flow is stabilized to ensure that the air is uniformly distributed on the surface of the wafer, and the stability of the process is ensured.

Description

Wafer processing apparatus
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to wafer processing equipment.
Background
In the prior art, wafers are processed and finally processed into chips by a wafer processing apparatus, particularly a plasma generating apparatus, which supplies plasma generated from a remote plasma generator to a process chamber and performs a plasma processing process, it is necessary to appropriately monitor the state of the process chamber and the processing process of the plasma. Currently, many chambers are directed to process and chamber diagnostic maintenance by observing spectral changes by OES (Optical Emission Spectrometry; emission spectroscopy), but OES monitoring is not applicable to plasma generating devices with remote plasma sources. In addition, some invasive monitoring approaches disrupt the flow distribution of the process gas within the chamber, thereby affecting the process.
In order to solve the above problems, it is highly desirable to provide a more suitable in-situ monitoring method.
Disclosure of Invention
In order to solve the above problems, the present invention provides a wafer processing apparatus comprising:
the cavity is used for carrying out process treatment on the surface of the wafer by introducing process gas;
the base is arranged in the cavity and used for supporting the wafer;
a liner disposed on an inner surface of a sidewall of the chamber and surrounding the susceptor for uniformly distributing the process gas on the wafer surface, and the process gas after the process treatment is exhausted out of the chamber;
and the monitoring device is communicated with the extraction opening arranged on the side wall of the cavity and is used for acquiring the process gas in the cavity through the extraction opening and analyzing the gas component.
Preferably, the bushing is annular, a plurality of air holes penetrating through the inner surface and the outer surface of the bushing are formed in the circumferential direction of the bushing at intervals, a first channel communicated with the air holes is formed in the outer surface of the bushing, and the air extraction opening is communicated with the first channel.
Preferably, an exhaust port is arranged at the first position of the side wall and is used for exhausting the processed process gas out of the cavity; the air extraction opening is arranged at a second position of the side wall, and the first position is opposite to the second position in the circumferential direction of the side wall.
Preferably, the monitoring device comprises:
the gas collection cavity is connected with the extraction opening and is used for obtaining process gas in the cavity;
the light source is connected with the gas collection cavity through a light path, and light emitted by the light source enters the gas collection cavity through the light path;
the light detector is connected with the gas collection cavity through a light path and is used for receiving light penetrating out of the gas collection cavity and generating data;
and the processor is connected with the light detector through a circuit and is used for receiving the data of the light detector and analyzing the gas component according to the data. Preferably, the outer surface of the bushing is further provided with a second channel communicating with the first channel, and the exhaust port communicates with the second channel.
Preferably, the bushing comprises: a first flange disposed on top of the outer surface of the liner, a second flange disposed on bottom of the outer surface of the liner, and a third flange disposed between the first flange and the second flange; the first channel is formed between the first flange and the third flange, the second channel is formed between the second flange and the third flange, and the third flange is provided with a communication port which is communicated with the first channel and the second channel.
Preferably, the wafer processing apparatus further comprises a purge gas source; the purging gas source is connected with the cavity and is used for conveying purging gas into the cavity to purge components in the cavity;
and the purging gas source is also connected with at least one gas input piece arranged at the top of the gas collection cavity, and the purging gas enters the gas collection cavity through the at least one gas input piece to purge the interior of the gas collection cavity.
Preferably, the wafer processing apparatus further comprises: a pump; the pump is respectively connected with the exhaust port of the cavity and the gas collection cavity and is used for exhausting the process gas in the cavity and the gas collection cavity.
Preferably, the gas collection chamber is connected to the pump by a first line, the first line being provided with a first valve.
Preferably, the purge gas source is connected with the gas collection chamber through a second pipeline and is connected with the chamber through a third pipeline; the second pipeline is provided with a second valve, and the third pipeline is provided with a third valve.
Preferably, the number of the gas input parts is two, and the second pipeline is divided into two branches, and each branch is connected with one gas input part.
Preferably, a fourth valve is arranged between the gas collection cavity and the extraction opening.
Preferably, the inner surface of the gas collection chamber is provided with a reflecting plate, and the at least one gas input member is obliquely disposed at the top of the gas collection chamber so that purge gas outputted from the at least one gas input member can be obliquely applied to the surface of the reflecting plate.
Preferably, the overall outline of the gas input piece is bell-shaped, the thickness direction of the gas input piece is flat plate-shaped, and the input end of the gas input piece is smaller than the output end of the gas input piece; the output end of the gas input piece is in a flat bar shape, and a plurality of gas outlet holes are uniformly distributed at the bottom of the gas input piece or gas outlet gaps are formed at the bottom of the gas input piece.
Preferably, the light source is a laser or a halogen lamp.
Preferably, the wafer processing apparatus further comprises: and the plasma source is arranged at the top of the cavity and is used for ionizing the input process gas into plasma and then supplying the plasma into the cavity.
The wafer processing equipment provided by the invention has the advantages that:
1. the invention can monitor the gas in the cavity in real time in the process, and the in-situ monitoring process of the adopted optical monitoring equipment has little influence on the process stability; and stabilizes the process gas flow so that the gas is uniformly distributed over the wafer surface.
2. The exhaust port is arranged at the first position, the extraction port is arranged at the second position, and the first position is opposite to the second position in the circumferential direction of the side wall, so that the process gas can be better ensured to be uniformly distributed on the surface of the wafer, and the uniformity of the process is ensured.
3. The pumping port of the present invention communicates with the first passage and is thus closer to the wafer, so that the pumping force at the second location can be increased.
4. Meanwhile, the air extraction opening and the air exhaust opening are connected with the pump, and the first valve can be replaced by a flow control device, so that the air flow on the surface of the wafer can be controlled more accurately.
Drawings
FIG. 1 is a schematic view of a plasma processing apparatus according to the present invention;
FIG. 2 is a schematic view of a bushing structure according to the present invention;
FIG. 3 is a schematic diagram of a monitoring device according to the present invention;
FIG. 4 is a front view of a gas input of the present invention;
fig. 5 is a bottom view of the gas inlet of the present invention.
Detailed Description
A wafer processing apparatus according to the present invention is described in further detail below with reference to the accompanying drawings and detailed description. The advantages and features of the present invention will become more apparent from the following description. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for the purpose of facilitating and clearly aiding in the description of embodiments of the invention. For a better understanding of the invention with objects, features and advantages, refer to the drawings. It should be understood that the structures, proportions, sizes, etc. shown in the drawings are for illustration purposes only and should not be construed as limiting the invention to the extent that any modifications, changes in the proportions, or adjustments of the sizes of structures, proportions, or otherwise, used in the practice of the invention, are included in the spirit and scope of the invention which is otherwise, without departing from the spirit or essential characteristics thereof.
The present invention provides a wafer processing apparatus, optionally a plasma generating apparatus, further optionally for removing native oxides, such as silicon oxide, from a wafer surface. The device can detect the components and the proportion of the process gas in the device in real time in the process. Of course, alternatively, the apparatus may be any other apparatus having a plasma, such as an etching apparatus, PECVD, PEALD, etc. This example exemplifies a plasma generating apparatus for removing native oxide of a wafer surface.
As shown in fig. 1, the apparatus mainly includes a chamber 105, a base 104, a liner 111, and a monitor device 200, where the chamber 105 is used to process a surface of a wafer by introducing a process gas, where the process gas is stored in a process gas source 122 and introduced into the chamber 105 through a pipeline; the susceptor 104 is disposed in the chamber 105 for supporting a wafer; the liner 111 is disposed on an inner surface of a sidewall of the chamber 105 and around the susceptor 104 for uniformly distributing the process gas on the wafer surface, and the process gas after the process treatment is exhausted out of the chamber; the monitoring device 200 is in communication with an extraction port disposed on a sidewall of the chamber 105, and is configured to obtain the process gas in the chamber 105 through the extraction port and analyze the gas component.
The bottom of the cavity 105 is provided with a lifting device 109, the top of the lifting device 109 is provided with the base 104, the base 104 is used for placing a wafer, the base 104 is located inside the bushing 111, the height of the base 104 is changed by the lifting device 109, the base 104 is lowered, and the wafer is supported by the pins 110, and the base 104 is separated from the wafer, so that the wafer can be taken by a manipulator.
The wafer processing apparatus further includes a plasma source 132, the plasma source 132 being disposed at the top of the chamber 105 for ionizing an input process gas into plasma and supplying the plasma into the chamber 105. Optionally, the plasma source 132 is a remote plasma source.
The wafer processing apparatus further includes a first gas distribution plate 131 and a second gas distribution plate 133 disposed on top of the chamber 105 for uniformly distributing the process gas into the chamber 105; specifically, two gas distribution plates are disposed below the plasma source 132, and the two gas distribution plates are disposed up and down, so that better uniform flow of the process gas can be achieved.
The wafer processing apparatus further includes a purge gas source 123, the purge gas source 123 being coupled to the chamber 105 for delivering a purge gas into the chamber 105 to purge components within the chamber. Alternatively, the components may be the first gas distribution plate 131 and the second gas distribution plate 133, that is, the purge gas source 123 is connected to the first gas distribution plate 131 and the second gas distribution plate 133 in the chamber; the component may be the lifting device 109, i.e. the purge gas source 123 is connected to the lifting device 109 within the chamber; of course, the component may be any component within the cavity 105, as desired.
The wafer processing apparatus further comprises a pump 103, and an exhaust port is provided at a sidewall of the chamber 105 for exhausting the process gas after the process treatment out of the chamber 105, and the pump 103 is connected to the exhaust port 107 of the chamber 105.
The working principle of the equipment is as follows: the process gas source 122 delivers process gas into the plasma source 132 at the top of the chamber, the plasma source 132 ignites and ionizes the process gas passing therethrough to form a plasma, the process gas in the plasma state is uniformly diffused through the first gas distribution plate 131 and the second gas distribution plate 133 at the top of the chamber, and at the same time, the plasma annihilates under the action of the two gas distribution plates, and only neutral particles therein are uniformly delivered to the wafer surface on the susceptor 104. The wafer surface is subjected to removal of native oxide (e.g., silicon oxide) by the process gas, and the process gas is pumped from the wafer surface within the liner 111 and out of the chamber 105 uniformly by the pump 103.
As shown in fig. 2, in this example, the liner 111 is annular, a plurality of air holes penetrating through the inner surface and the outer surface of the liner 111 are circumferentially spaced apart from each other, a first channel 113 communicating with the air holes is provided on the outer surface of the liner 111, and the air extraction opening communicates with the first channel 113. The outer surface of the bushing 111 is further provided with a second channel 112 communicating with the first channel 113. Specifically, with continued reference to fig. 2, the bushing 111 includes: a first flange 1113, a second flange 1111, and a third flange 1112, the first flange 1113 being disposed on top of the outer surface of the liner 111, the second flange 1111 being disposed at the bottom of the outer surface of the liner 111, the third flange 1112 being disposed between the first flange 1113 and the second flange 1112; the first channel 113 is formed between the first flange 1113 and the third flange 1111, the second channel 112 is formed between the second flange 1111 and the third flange 1112, and a communication port is provided on the third flange 1112, and the first channel 113 and the second channel 112 are communicated through the communication port. The exhaust port 107 is arranged at a first position P2 of the side wall (or the lining) of the cavity, the exhaust port 107 is communicated with the second channel 112, and the exhaust port 107 is connected with the pump 103; the extraction opening is arranged at a second position P1 of the side wall (or the lining); the first position P2 is formed on the side wall (or bushing) is circumferentially opposite the second position P1. Optionally, the number of the communication ports is two, the communication ports are respectively arranged at a third position P3 and a fourth position P4, and the connecting line of the third position P3 and the fourth position P4 is orthogonal to the connecting line of the first position P2 and the second position P1.
During the process, the process gas after completing the process is uniformly pumped out from the surface of the wafer in the liner 111 by the pump 103, and enters the first channel 113 through the air holes to form an air flow F1, and a small part of the process gas in the air flow F1 can enter the monitoring device 200 at the second position P1 through the pumping hole, and the monitoring device 200 detects the components and the proportion of the gas in situ. The rest of the air flow F1 passes through the first channel 113 and then enters the second channel 112 through the communication port to form an air flow F2, the air flow F2 passes through the exhaust port 107 to form an air flow F3, the air flow F3 is pumped out of the cavity 105 by the pump 103, and the pump 103 is arranged below the exhaust port 107.
Since the pump 103 is disposed at the first position P2, the process gas on the wafer surface flows to the pump 103 under the pumping force of the pump 103. Since the pump 103 is eccentrically disposed with respect to the wafer, the process gas on the surface of the wafer, which is close to the pump 103, is more easily pumped out, and thus causes the process treatment on the surface of the wafer to be eccentric, i.e., uneven treatment. This may result in a recess etch tilt or a different etch depth near the pump 103 for the etching apparatus, and thus the microstructure of the wafer processing may not be guaranteed. In the monitoring device 200 according to the present invention, the pumping hole is disposed at a position opposite to the pump 103, that is, the first position P2 is opposite to the second position P1 in the circumferential direction of the side wall (or the liner) of the cavity, and then a negative pressure point is also generated at the second position P1, so that the eccentric effect of the pump 103 can be leveled to a certain extent, that is, the gas outlets are disposed at two circumferentially symmetrical positions of the liner 111, so that the gas does not tend to flow out to the side of the cavity 105 close to the pump 103. In addition, the pumping port is directly connected to the first channel 113, and thus is closer to the wafer, so that the pumping force at the second position P1 can be increased.
Optionally, the purge gas source 123 is further connected to the monitoring device 200 for purging the monitoring device 200.
Preferably, the pump 103 is also connected to the monitoring device 200. During the process, the monitoring device 200 is communicated with the cavity 105, and the pump 103 can simultaneously pump out the process gas in the cavity 105 from the exhaust port 107 and the exhaust port through the monitoring device 200, so that the uniformity of the distribution of the process gas on the surface of the wafer is further ensured.
Fig. 3 shows a schematic structural diagram of the monitoring device 200, and as shown in fig. 3, the monitoring device 200 includes: a gas collection chamber 205, a light source 201, a light detector 202, and a processor 203. The gas collection chamber 205 is connected to a pumping port through which the process gas within the chamber 105 is acquired. The pump 103 is coupled to the gas collection chamber 205 for exhausting process gas from the gas collection chamber 205. The light source 201 is connected with the gas collection cavity 205 through a light path, light emitted by the light source enters the gas collection cavity 205 through the light path, and the light is discharged after being acted with the gas in the gas collection cavity 205; the photodetector 202 is connected with the gas collection chamber 205 through an optical path, and is used for receiving the light passing out of the gas collection chamber 205 and generating a data signal; the processor 203 is electrically connected to the photodetector 202 for receiving the data signal from the photodetector 202 and analyzing the gas composition and ratio. The gas collection chamber 205 is connected to the light source 201 and the light detector 202 by an optical fiber 204. Since the absorption wavelength of light is different from gas to gas, the gas composition can be analyzed by this characteristic. The light detector 202 may be a spectrometer and the light source 201 is a laser or a halogen lamp capable of emitting light of a specific wavelength. When the gas composition changes, the spectrum of the light detector 202 also changes and the processor 203 can determine the composition and proportion of the gas by comparing the received spectra. Optionally, the processor 203 is connected to the light source 201, and is configured to control the power of the light source 201 and adjust the wavelength.
The gas collecting cavity 205 is a cylinder, the gas collecting cavity 205 comprises a cylinder cavity and reflecting plates arranged at two ends of the cylinder cavity, and the reflecting plates can reduce the absorption of the cylinder cavity to light, namely, the interference of background absorption can be reduced, so that the light can be fully reflected for many times in the cylinder cavity to contact with the process gas, and the accuracy of spectrum information is improved. In addition, a process gas inlet and a light source inlet are formed in one reflecting plate, and a process gas outlet and a light outlet are formed in the other reflecting plate; the pumping port is connected to the process gas inlet of the gas collection chamber 205 and the pump 103 is connected to the process gas outlet of the gas collection chamber 205; light from the light source 201 enters the gas collection chamber 205 through the light source inlet, is reflected by the reflective plate, and finally exits the gas collection chamber 205 through the light outlet.
In order to prevent the process gas from damaging the reflecting plate and further reduce the background absorption, in other preferred embodiments, the monitoring device 200 further has at least one gas input member 206 connected to the purge gas source 123, the at least one gas input member 206 being obliquely disposed on top of the gas collection chamber 205, and the purge gas output from the gas input member 205 being capable of being obliquely blown against the surface of the reflecting plate. During the process, the reflector plate may be contaminated and may need to be purged through the gas inlet 206 in order to protect the reflector plate.
Further, as shown in fig. 4 and 5, the gas input member 206 has a bell-shaped overall profile and a flat plate-like thickness, and the input end of the gas input member is smaller than the output end; the output end of the gas input member 206 is flat bar-shaped, and a plurality of gas outlet holes are uniformly distributed at the bottom or gas outlet slits are formed at the bottom. This arrangement can make the purge gas uniformly distributed on the reflection plate to improve the cleaning effect. The bell shape allows for a small gas inlet and a wide gas outlet, where the purge flow rate may be slowed down, distributed more evenly, and the small flow rate does not affect the process gas within the gas collection chamber 205.
The invention also introduces a pipeline connection mode and a working mode of the wafer processing equipment. As shown in fig. 1 and 3, the gas collection chamber 205 of the monitoring device 200 is connected to the pump 103 through a first pipe 151, and a first valve V1 is disposed on the first pipe 151. The purge gas source 123 is divided into a second pipeline and a third pipeline by a pipeline 152, and is respectively connected with the gas collection cavity 205 and the cavity 105; the second pipeline and the third pipeline are respectively provided with a second valve V2 and a third valve V3. Wherein the second line connected to the gas collection chamber 205 is divided into two branches connected to two of said gas inlets 206, respectively. The gas collection chamber 205 is connected to the pumping port of the chamber 105 through a third pipe 153, and a fourth valve V4 is disposed on the third pipe 153.
During the process, the states of the second valve V2 and the third valve V3 may be selectively controlled to control different functions, for example, only opening the second valve V2 may supply purge gas into the gas collection chamber 205 to prevent the process gas from damaging the reflective plate; or simply opening the third valve V3 may provide purge gas into the chamber 105. Of course, the second valve V2 and the third valve V3 may be opened at the same time. The second valve V2 and the fourth valve V4 may also be closed to shut down the entire monitoring device 200.
Alternatively, the first valve V1 may be replaced by a flow control device, so that when the monitoring device 200 is operated, the flow rate of the process gas pumped out of the chamber can be controlled, and the uniformity of the distribution of the process gas on the wafer surface can be better ensured.
After the process is completed, a separate cleaning process of the gas collection chamber 205 may be performed, in which case only the first valve V1 and the second valve V2 need be opened; of course, the interior of the chamber 105 may be cleaned separately and the gas collection chamber 205 and the chamber 105 may be cleaned at the same time, which is not described herein.
In summary, the invention can monitor the gas in the cavity in real time in the process; and the process air flow is stabilized, so that the gas is uniformly distributed on the surface of the wafer, and the stability of the process is ensured.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.

Claims (13)

1. A wafer processing apparatus, comprising:
the cavity is used for carrying out process treatment on the surface of the wafer by introducing process gas;
the base is arranged in the cavity and used for supporting the wafer;
a liner disposed on an inner surface of a sidewall of the chamber and surrounding the susceptor for uniformly distributing the process gas on the wafer surface, and the process gas after the process treatment is exhausted out of the chamber;
the monitoring device is communicated with the air extraction opening arranged on the side wall of the cavity and is used for acquiring the process gas in the cavity through the air extraction opening and analyzing the gas component;
the bushing is annular, a plurality of air holes penetrating through the inner surface and the outer surface of the bushing are formed in the circumferential direction of the bushing at intervals, a first channel communicated with the air holes is formed in the outer surface of the bushing, and the air extraction opening is communicated with the first channel;
an exhaust port is arranged at the first position of the side wall and used for exhausting the process gas after the process treatment out of the cavity; the air extraction opening is arranged at a second position of the side wall, and the first position is opposite to the second position in the circumferential direction of the side wall;
the monitoring device includes:
the gas collection cavity is connected with the extraction opening and is used for obtaining process gas in the cavity;
the light source is connected with the gas collection cavity through a light path, and light emitted by the light source enters the gas collection cavity through the light path;
the light detector is connected with the gas collection cavity through a light path and is used for receiving light penetrating out of the gas collection cavity and generating data;
and the processor is connected with the light detector through a circuit and is used for receiving the data of the light detector and analyzing the gas component according to the data.
2. The wafer processing apparatus of claim 1, wherein the outer surface of the liner is further provided with a second channel in communication with the first channel, the exhaust port in communication with the second channel.
3. The wafer processing apparatus of claim 2, wherein the bushing comprises: a first flange disposed on top of the outer surface of the liner, a second flange disposed on bottom of the outer surface of the liner, and a third flange disposed between the first flange and the second flange; the first channel is formed between the first flange and the third flange, the second channel is formed between the second flange and the third flange, and the third flange is provided with a communication port which is communicated with the first channel and the second channel.
4. The wafer processing apparatus of claim 1, further comprising a source of purge gas;
the purging gas source is connected with the cavity and is used for conveying purging gas into the cavity to purge components in the cavity;
and the purging gas source is also connected with at least one gas input piece arranged at the top of the gas collection cavity, and the purging gas enters the gas collection cavity through the at least one gas input piece to purge the interior of the gas collection cavity.
5. The wafer processing apparatus of claim 4, further comprising: a pump;
the pump is respectively connected with the exhaust port of the cavity and the gas collection cavity and is used for exhausting the process gas in the cavity and the gas collection cavity.
6. The wafer processing apparatus of claim 5, wherein the gas collection chamber is coupled to the pump by a first conduit having a first valve disposed thereon.
7. The wafer processing apparatus of claim 4, wherein the purge gas source is coupled to the gas collection chamber through a second conduit and to the chamber through a third conduit; the second pipeline is provided with a second valve, and the third pipeline is provided with a third valve.
8. The wafer processing apparatus of claim 7, wherein the number of gas inputs is two, the second conduit being divided into two branches, each branch being connected to one of the gas inputs.
9. The wafer processing apparatus of claim 1, wherein a fourth valve is disposed between the gas collection chamber and the extraction port.
10. The wafer processing apparatus of claim 4, wherein an inner surface of the gas collection chamber is provided with a reflecting plate, and the at least one gas input is obliquely disposed at a top of the gas collection chamber such that purge gas output from the at least one gas input can be obliquely blown against the reflecting plate surface.
11. The wafer processing apparatus according to claim 4, wherein the gas input member has an overall contour in the shape of a bell and a flat plate in a thickness direction; the input end of the gas input piece is smaller than the output end; the output end of the gas input piece is in a flat bar shape, and a plurality of gas outlet holes are uniformly distributed at the bottom of the gas input piece or gas outlet gaps are formed at the bottom of the gas input piece.
12. The wafer processing apparatus of claim 1, wherein the light source is a laser or a halogen lamp.
13. The wafer processing apparatus of claim 1, further comprising: and the plasma source is arranged at the top of the cavity and is used for ionizing the input process gas into plasma and then supplying the plasma into the cavity.
CN202310678149.4A 2023-06-09 2023-06-09 Wafer processing apparatus Active CN116453931B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310678149.4A CN116453931B (en) 2023-06-09 2023-06-09 Wafer processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310678149.4A CN116453931B (en) 2023-06-09 2023-06-09 Wafer processing apparatus

Publications (2)

Publication Number Publication Date
CN116453931A true CN116453931A (en) 2023-07-18
CN116453931B CN116453931B (en) 2023-10-20

Family

ID=87123998

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310678149.4A Active CN116453931B (en) 2023-06-09 2023-06-09 Wafer processing apparatus

Country Status (1)

Country Link
CN (1) CN116453931B (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040069747A1 (en) * 2001-09-17 2004-04-15 Reflectivity, Inc., A California Corporation Apparatus and method for detecting an endpoint in a vapor phase etch
CN101494159A (en) * 2008-01-22 2009-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 System and method for monitoring semiconductor processing technique
CN101740340A (en) * 2008-11-25 2010-06-16 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor processing device
CN106548960A (en) * 2015-09-23 2017-03-29 朗姆研究公司 For determining the equipment of processing speed
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN114420526A (en) * 2022-01-18 2022-04-29 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040069747A1 (en) * 2001-09-17 2004-04-15 Reflectivity, Inc., A California Corporation Apparatus and method for detecting an endpoint in a vapor phase etch
CN101494159A (en) * 2008-01-22 2009-07-29 北京北方微电子基地设备工艺研究中心有限责任公司 System and method for monitoring semiconductor processing technique
CN101740340A (en) * 2008-11-25 2010-06-16 北京北方微电子基地设备工艺研究中心有限责任公司 Reaction chamber and semiconductor processing device
CN106548960A (en) * 2015-09-23 2017-03-29 朗姆研究公司 For determining the equipment of processing speed
WO2020106297A1 (en) * 2018-11-21 2020-05-28 Lam Research Corporation Method for determining cleaning endpoint
CN114420526A (en) * 2022-01-18 2022-04-29 江苏天芯微半导体设备有限公司 Bush and wafer preprocessing device

Also Published As

Publication number Publication date
CN116453931B (en) 2023-10-20

Similar Documents

Publication Publication Date Title
US6835278B2 (en) Systems and methods for remote plasma clean
KR100786887B1 (en) Method and apparatus for monitoring an effluent from a chamber, and a chamber cleaning apparatus
KR100521109B1 (en) Processing apparatus and cleaning method
KR200456733Y1 (en) Gas exhaust apparatus of sensor chamber
KR20050053715A (en) Apparatus and method for use of optical system with plasma processing system
US20170084433A1 (en) Plasma etching systems and methods using empirical mode decomposition
US6769288B2 (en) Method and assembly for detecting a leak in a plasma system
KR20090067004A (en) Plasma processing apparatus
CN219302267U (en) Apparatus and system for measuring dissociation of process gases
CN116453931B (en) Wafer processing apparatus
TWI794850B (en) Vacuum processing apparatus and vacuum processing method
TW201907150A (en) Measuring concentrations of radicals in semiconductor processing
KR101273922B1 (en) Self-plasma optical emission spectroscopy having active contamination preventing equipment and method of preventing contaminaion of plasma chamber
US10825666B2 (en) Plasma monitoring apparatus and plasma processing system
US20070215043A1 (en) Substrate processing apparatus, deposit monitoring apparatus, and deposit monitoring method
KR20120026872A (en) Process monitoring device and semiconductor process apparatus with the same, and process monitoring method
JPH07240405A (en) Etching termination detecting method
CN220272426U (en) Monitoring device for wafer processing equipment and wafer processing equipment
TWI839450B (en) Method of air leak detection via detecting a presence of nitrogen in plasma processing apparatus with separation grid
KR20190050254A (en) Substrate processing apparatus and monitoring method of processing substrate
CN112368798B (en) Air leakage detection in plasma processing apparatus with separation grid
TWI719833B (en) Method and device for monitoring gas composition and processing device using it
TWI839584B (en) Inline measurement of process gas dissociation using infrared absorption
KR100950788B1 (en) Sample processing apparatus and sample processing controlling device
KR20230106868A (en) Optical analysis unit, and substrate processing apparatus including the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant