CN116453756A - Preparation method of oxide barrier layer of second-generation high-temperature superconducting tape - Google Patents
Preparation method of oxide barrier layer of second-generation high-temperature superconducting tape Download PDFInfo
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- CN116453756A CN116453756A CN202310484610.2A CN202310484610A CN116453756A CN 116453756 A CN116453756 A CN 116453756A CN 202310484610 A CN202310484610 A CN 202310484610A CN 116453756 A CN116453756 A CN 116453756A
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- film layer
- generation high
- metal film
- barrier layer
- cleaning
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- 230000004888 barrier function Effects 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 238000004140 cleaning Methods 0.000 claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 14
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910000856 hastalloy Inorganic materials 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 3
- 239000003960 organic solvent Substances 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000002887 superconductor Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052797 bismuth Inorganic materials 0.000 description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- CNEWPRQQHICZBP-UHFFFAOYSA-N [O].[Cu].[Ba].[La] Chemical compound [O].[Cu].[Ba].[La] CNEWPRQQHICZBP-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 150000003746 yttrium Chemical class 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
The invention provides a preparation method of a second-generation high-temperature superconductive strip oxide barrier layer, which comprises the steps of firstly cleaning the surface of a metal base band, depositing a metal film layer, and polishing the metal film layer by laser, so that the metal film layer is melted and self-oxidized to form the second-generation high-temperature superconductive strip oxide barrier layer, and compared with the deposited oxide film layer, the preparation method has higher efficiency, relatively simple equipment requirement, improves the preparation efficiency of the second-generation high-temperature superconductive strip, adopts laser polishing, is more environment-friendly, and avoids pollution caused by electrochemical polishing.
Description
Technical Field
The invention relates to the technical field of superconduction, in particular to a preparation method of a second-generation high-temperature superconducting tape oxide barrier layer.
Background
Scientists Bai Nuoci and mueller who were set up in the american international business machines corporation in zurich laboratory, switzerland, 1 month in 1986, first found that barium lanthanum copper oxide was a high temperature superconductor, and soon in 1-2 years, the critical transition temperature of the superconductor was raised above the liquid nitrogen temperature by various research groups in the world, thereby obviating the need for expensive liquid helium refrigeration by superconductors. In the past decade, research on superconducting-based superconducting power equipment has been rapidly developed, and remarkable results are obtained in the fields of superconducting energy storage, superconducting motors, superconducting cables, superconducting current limiters, superconducting transformers, superconducting synchronous cameras and the like.
The high temperature superconductive tapes which are currently commercialized are classified into bismuth-based and yttrium-based tapes. Bismuth-based superconductors, i.e., first generation high temperature superconducting tapes, also known as BSCCO superconductors; the yttrium series superconductor is the second generation high temperature superconducting tape, also called YBCO or REBCO superconductor.
The second-generation high-temperature superconducting tape using REBCO (RE is a rare earth element) as a superconducting layer material has stronger current carrying capacity, higher magnetic field performance and lower material cost compared with a bismuth lacing material, and has wider and better application prospect in a plurality of fields such as medical treatment, military, energy sources and the like. The second generation high temperature superconductive tape is produced by multilayer coating process on flexible metal substrate, and is called as coated conductor because REBCO as superconductive current carrying core is ceramic.
The second generation high temperature superconductive tape may be divided into metal base band, barrier layer, seed layer and superconductive layer. The metal base band generally needs to be subjected to processes such as electrochemical polishing to reach a nanoscale surface, and the roughness generally needs Rq <2nm@50um×50um, and then a physical vapor deposition barrier layer is adopted. The barrier layer mainly prevents the baseband from being diffused to the superconducting layer in the high-temperature process to damage the superconducting performance, and the barrier layer planarizes the baseband to provide good surface morphology for the seed layer. At present, the barrier layer is mainly alumina, the preparation method is mainly magnetron sputtering and evaporation, and the alumina is ceramic material, so that the deposition efficiency is slower, and the production efficiency of the second-generation high-temperature superconducting tape is reduced. And electrochemical polishing of metal base tape has the problem of environmental pollution. Therefore, the preparation method of the oxide barrier layer of the second-generation high-temperature superconductive tape with high efficiency and environmental protection is a technical problem to be solved in the prior art.
Disclosure of Invention
The invention aims to provide a preparation method of a second-generation high-temperature superconducting tape oxide barrier layer.
In order to achieve the above object, the present invention provides the following technical solutions:
the invention provides a preparation method of a second-generation high-temperature superconducting tape oxide barrier layer, which comprises the following steps:
(1) Selecting the cleaned metal base band as a substrate, and depositing on the surface of the metal base band to form a metal film layer;
(2) And (3) carrying out laser polishing on the metal film layer obtained in the step (1) in an oxygen atmosphere or an air atmosphere to form a second-generation high-temperature superconductive tape oxide barrier layer.
Preferably, the baseband in the step (1) is one of hastelloy baseband and stainless steel metal baseband; the roughness Rq of the substrate is less than 50 nm@50um.
Preferably, the cleaned metal base band in the step (1) is obtained by cleaning the metal base band.
Preferably, the cleaning treatment is at least one of acidic cleaning, alkaline cleaning, organic solvent cleaning, ion cleaning and laser cleaning.
Preferably, the deposition method in the step (1) is at least one of physical vapor deposition, electroless plating and spraying.
Preferably, the metal in the metal film layer in the step (1) is at least one of Al, ni, nb, ta.
Preferably, the thickness of the metal film layer in the step (1) is submicron.
Preferably, the molecular content of oxygen in the oxygen atmosphere in the step (2) is 15% -50%.
The invention provides a preparation method of a second-generation high-temperature superconductive strip oxide barrier layer, which comprises the steps of firstly depositing on the surface of a metal base band to form a metal film layer, and then polishing the metal film layer by adopting laser, so that the metal film layer is melted and self-oxidized to form the second-generation high-temperature superconductive strip oxide barrier layer, compared with the deposited oxide film layer, the efficiency is higher, the equipment requirement is relatively simple, the preparation efficiency of the second-generation high-temperature superconductive strip is improved, and compared with electrochemical polishing, the laser polishing is more environment-friendly, and sewage and acid mist are avoided. The results of the examples show that the second-generation high-temperature superconductive tape oxide barrier layer in the examples of the invention has high preparation efficiency and is more environment-friendly.
Drawings
FIG. 1 is a schematic diagram of a method for preparing an oxide barrier layer of a second generation high temperature superconducting tape according to the present invention;
FIG. 2 is a schematic diagram of forming a metal film layer according to an embodiment of the invention;
FIG. 3 is a schematic diagram of forming a second generation oxide barrier layer of a high temperature superconducting tape according to an embodiment of the present invention.
Detailed Description
The invention provides a preparation method of a second-generation high-temperature superconducting tape oxide barrier layer, which comprises the following steps:
(1) Selecting the cleaned metal base band as a substrate, and depositing on the surface of the metal base band to form a metal film layer;
(2) And (3) carrying out laser polishing on the metal film layer obtained in the step (1) in an oxygen atmosphere or an air atmosphere to form a second-generation high-temperature superconductive tape oxide barrier layer.
In the present invention, the metal base band is preferably one of hastelloy base band and stainless steel metal base band. In the present invention, the roughness Rq <50nm@50um×50um of the substrate. In the present invention, the cleaned metal base band is preferably obtained by cleaning the metal base band. In the present invention, the cleaning treatment is preferably at least one of acidic cleaning, alkaline cleaning, organic solvent cleaning, ion cleaning, and laser cleaning.
In the present invention, the deposition method is preferably at least one of physical vapor deposition, electroless plating, and spray coating.
In the present invention, the metal in the metal film layer is preferably at least one of Al, ni, nb, ta.
In the present invention, the thickness of the metal film layer is preferably submicron, more preferably >200nm. The thickness of the metal film layer is controlled in the range so as to completely cover the substrate and ensure that the laser cannot melt the substrate in the laser polishing process.
After the metal film is obtained, the metal film is subjected to laser polishing to form the second-generation high-temperature superconductive tape oxide barrier layer.
In the present invention, the laser polishing is performed under an oxygen or air atmosphere. In the present invention, the molecular content of oxygen in the oxygen atmosphere is preferably 15% to 50%. The invention carries out laser polishing in oxygen atmosphere or air atmosphere, so that metal is melted under the action of laser and reacts with oxygen to form an oxide film layer.
The method provided by the invention is simple to operate and suitable for popularization and application.
The technical solutions of the present invention will be clearly and completely described in the following in connection with the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Fig. 1 is a schematic diagram of a method for preparing a second-generation high-temperature superconductive tape oxide barrier layer according to the present invention, specifically, a metal film layer is formed by first depositing on a surface of a metal base tape, and then polishing the metal film layer by laser, so that the metal film layer is melted and autoxidized to form an oxide film layer, i.e., a second-generation high-temperature superconductive tape oxide barrier layer.
Embodiments of the invention:
the preparation method of the oxide barrier layer of the second-generation high-temperature superconductive tape comprises the following steps:
(1) Selecting a hastelloy C276 base band with the roughness Rq <50nm@50um, the thickness of 50um and the width of 12mm of the cleaned base as a substrate, and performing physical vapor deposition on the surface of the metal base band to form an aluminum metal film layer with the thickness of 300 nm;
the cleaned hastelloy C276 baseband is obtained by cleaning the surface of the baseband by using an alkaline cleaner and then drying the surface;
(2) Performing laser polishing on the metal film layer obtained in the step (1) in the atmosphere, and oxidizing molten aluminum to form a second-generation high-temperature superconductive tape oxide barrier layer;
the laser polishing adopts 1064nm wavelength infrared laser with the frequency of 400ns, the power of about 30W, the scanning speed of 1000mm/s and the tape feeding speed of 100m/s.
Fig. 2 is a schematic diagram of forming a metal film layer in an embodiment of the present invention, and as can be seen from fig. 2, an aluminum metal film layer is formed on the surface of a metal base band, and the surface roughness of the metal film layer is rough due to the rough surface of the metal base band.
FIG. 3 is a schematic diagram of forming a second generation high temperature superconductive tape oxide barrier layer in an embodiment of the present invention, polishing an aluminum metal film layer in the embodiment by using laser polishing, wherein during the polishing process, laser energy acts on the surface of the metal aluminum, and aluminum on the surface melts, so that the polishing effect is achieved under the action of gravity and capillary; meanwhile, under the atmosphere of oxygen/atmosphere, molten aluminum reacts with oxygen to generate aluminum oxide, so that a better second-generation high-temperature superconductive strip oxide barrier layer is formed. The laser parameters and the matching before the tape running speed need to be controlled in the polishing process, so that the particle is prevented from being oversized while the polished surface is ensured.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (8)
1. The preparation method of the oxide barrier layer of the second-generation high-temperature superconducting tape comprises the following steps:
(1) Selecting the cleaned metal base band as a substrate, and depositing on the surface of the metal base band to form a metal film layer;
(2) And (3) carrying out laser polishing on the metal film layer obtained in the step (1) in an oxygen atmosphere or an air atmosphere to form a second-generation high-temperature superconductive tape oxide barrier layer.
2. The method according to claim 1, wherein the base band in the step (1) is one of hastelloy base band and stainless steel metal base band; the roughness Rq of the substrate is less than 50 nm@50um.
3. The method according to claim 1 or 2, wherein the cleaned metal base tape in the step (1) is obtained by cleaning the metal base tape.
4. The method according to claim 3, wherein the cleaning treatment is at least one of acid cleaning, alkaline cleaning, organic solvent cleaning, ion cleaning, and laser cleaning.
5. The method according to claim 1, wherein the deposition method in the step (1) is at least one of physical vapor deposition, electroless plating, and spray plating.
6. The method of claim 1, wherein the metal in the metal film layer in step (1) is at least one of Al, ni, nb, ta.
7. The method according to claim 1 or 6, wherein the thickness of the metal film layer in the step (1) is submicron.
8. The method according to claim 1, wherein the molecular content of oxygen in the oxygen atmosphere in the step (2) is 15% to 50%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310484610.2A CN116453756A (en) | 2023-04-28 | 2023-04-28 | Preparation method of oxide barrier layer of second-generation high-temperature superconducting tape |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310484610.2A CN116453756A (en) | 2023-04-28 | 2023-04-28 | Preparation method of oxide barrier layer of second-generation high-temperature superconducting tape |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116453756A true CN116453756A (en) | 2023-07-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310484610.2A Pending CN116453756A (en) | 2023-04-28 | 2023-04-28 | Preparation method of oxide barrier layer of second-generation high-temperature superconducting tape |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116453756A (en) |
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2023
- 2023-04-28 CN CN202310484610.2A patent/CN116453756A/en active Pending
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