CN116453732A - High-efficiency transduction radiation-induced fluorescent isotope battery - Google Patents
High-efficiency transduction radiation-induced fluorescent isotope battery Download PDFInfo
- Publication number
- CN116453732A CN116453732A CN202310241326.2A CN202310241326A CN116453732A CN 116453732 A CN116453732 A CN 116453732A CN 202310241326 A CN202310241326 A CN 202310241326A CN 116453732 A CN116453732 A CN 116453732A
- Authority
- CN
- China
- Prior art keywords
- radiation
- induced fluorescence
- layer
- crystal
- induced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005855 radiation Effects 0.000 title claims abstract description 100
- 230000026683 transduction Effects 0.000 title claims abstract description 21
- 238000010361 transduction Methods 0.000 title claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 57
- 230000003287 optical effect Effects 0.000 claims abstract description 30
- 238000004806 packaging method and process Methods 0.000 claims abstract description 23
- 239000002245 particle Substances 0.000 claims abstract description 20
- 230000008878 coupling Effects 0.000 claims abstract description 12
- 238000010168 coupling process Methods 0.000 claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 claims abstract description 12
- 230000002285 radioactive effect Effects 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 12
- 238000000227 grinding Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 4
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- 238000005498 polishing Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000002189 fluorescence spectrum Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 16
- 230000000694 effects Effects 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
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- 230000006872 improvement Effects 0.000 description 2
- 238000010921 in-depth analysis Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CIOAGBVUUVVLOB-NJFSPNSNSA-N Strontium-90 Chemical compound [90Sr] CIOAGBVUUVVLOB-NJFSPNSNSA-N 0.000 description 1
- LXQXZNRPTYVCNG-YPZZEJLDSA-N americium-241 Chemical compound [241Am] LXQXZNRPTYVCNG-YPZZEJLDSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
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- 239000002086 nanomaterial Substances 0.000 description 1
- PXHVJJICTQNCMI-RNFDNDRNSA-N nickel-63 Chemical compound [63Ni] PXHVJJICTQNCMI-RNFDNDRNSA-N 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- VQMWBBYLQSCNPO-NJFSPNSNSA-N promethium-147 Chemical compound [147Pm] VQMWBBYLQSCNPO-NJFSPNSNSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910000383 uranium sulfate Inorganic materials 0.000 description 1
- VBWSWBQVYDBVGA-NAHFVJFTSA-N uranium-234;uranium-235;uranium-238 Chemical compound [234U].[235U].[238U] VBWSWBQVYDBVGA-NAHFVJFTSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
- G21H1/12—Cells using conversion of the radiation into light combined with subsequent photoelectric conversion into electric energy
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310241326.2A CN116453732A (en) | 2023-03-14 | 2023-03-14 | High-efficiency transduction radiation-induced fluorescent isotope battery |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202310241326.2A CN116453732A (en) | 2023-03-14 | 2023-03-14 | High-efficiency transduction radiation-induced fluorescent isotope battery |
Publications (1)
Publication Number | Publication Date |
---|---|
CN116453732A true CN116453732A (en) | 2023-07-18 |
Family
ID=87131067
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202310241326.2A Pending CN116453732A (en) | 2023-03-14 | 2023-03-14 | High-efficiency transduction radiation-induced fluorescent isotope battery |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN116453732A (en) |
-
2023
- 2023-03-14 CN CN202310241326.2A patent/CN116453732A/en active Pending
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information |
Address after: No.1 courtyard, Sanqiang Road, Xinzhen, Fangshan District, Beijing Applicant after: CHINA INSTITUTE OF ATOMIC ENERGY Applicant after: XIAMEN University Address before: Siming District of Xiamen city in Fujian Province, 361005 South Siming Road No. 422 Applicant before: XIAMEN University Applicant before: CHINA INSTITUTE OF ATOMIC ENERGY |
|
CB02 | Change of applicant information | ||
CB03 | Change of inventor or designer information |
Inventor after: Li Xin Inventor after: Zhang Lifeng Inventor after: San Haisheng Inventor after: Jiang Tongxin Inventor after: Li Sijie Inventor after: Zhang Lei Inventor after: Tang Xian Inventor after: Qin Shaopeng Inventor after: Ren Jieying Inventor before: San Haisheng Inventor before: Jiang Tongxin Inventor before: Tang Xian Inventor before: Li Xin Inventor before: Zhang Lifeng Inventor before: Li Sijie Inventor before: Zhang Lei Inventor before: Qin Shaopeng Inventor before: Ren Jieying |
|
CB03 | Change of inventor or designer information |