CN116435378A - Semiconductor device with a semiconductor layer having a plurality of semiconductor layers - Google Patents
Semiconductor device with a semiconductor layer having a plurality of semiconductor layers Download PDFInfo
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- CN116435378A CN116435378A CN202310690284.0A CN202310690284A CN116435378A CN 116435378 A CN116435378 A CN 116435378A CN 202310690284 A CN202310690284 A CN 202310690284A CN 116435378 A CN116435378 A CN 116435378A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 238000009792 diffusion process Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 9
- 125000006850 spacer group Chemical group 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 5
- 238000002955 isolation Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 17
- 238000010521 absorption reaction Methods 0.000 description 10
- 238000002834 transmittance Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
The application provides a semiconductor device, which comprises a substrate, a light reflection layer and an epitaxial layer, wherein the light reflection layer is arranged on the substrate; the epitaxial layer is arranged on one side of the light reflection layer, which is far away from the substrate, one side of the epitaxial layer, which is far away from the substrate, is provided with a P-type doping part, a first P-type part and a floating diffusion part, the P-type doping part is contacted with the first P-type part, the P-type doping part is contacted with the light reflection layer, the first P-type part is arranged at intervals with the light reflection layer, and the floating diffusion part is arranged in the first P-type part and is arranged at intervals with the P-type doping part so as to improve the light conversion efficiency.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to a semiconductor device.
Background
For photodiode (photo diode) devices, epitaxial layers are critical structures that have numerous effects on the photoelectric conversion efficiency and dark current. However, when the wavelength of the received light changes, the light conversion efficiency of the epitaxial layer is not good, for example, when the wavelength of the light changes to the invisible light region, for example, the received light is infrared light, and the existing design of the epitaxial layer cannot meet the conversion requirement of the invisible light, so that the light conversion efficiency is not good.
Disclosure of Invention
In view of this, the present application provides a semiconductor device to improve light conversion efficiency.
The present application provides a semiconductor device including:
a substrate;
a light reflection layer disposed on the substrate;
the epitaxial layer is arranged on one side, far away from the substrate, of the light reflection layer, one side, far away from the substrate, of the epitaxial layer is provided with a P-type doping part, a first P-type part and a floating diffusion part, the P-type doping part is in contact with the first P-type part, the P-type doping part is in contact with the light reflection layer, the first P-type part is in interval arrangement with the light reflection layer, and the floating diffusion part is located in the first P-type part and is in interval arrangement with the P-type doping part.
In some embodiments, the material of the light reflecting layer includes at least one of silicon nitride, silicon oxynitride, and silicon oxide.
In some embodiments, the light reflective layer has a thickness of 400-1000nm.
In some embodiments, the epitaxial layer is provided with spacers on the sides.
In some embodiments, the spacer is an ion doping.
In some embodiments, the material of the spacer is an insulating material.
In some embodiments, the epitaxial layer has a thickness of 3-4um.
In some embodiments, a first N-type portion and a second P-type portion are also included, the first N-type portion being located between the P-type doped portion and the second P-type portion.
In some embodiments, the semiconductor device further includes a second N-type portion located in the first P-type portion, the second N-type portion being located at a side of the floating diffusion portion away from the P-type doped portion and spaced apart from the floating diffusion portion.
In some embodiments, a polysilicon portion is disposed on a side of the epitaxial layer remote from the substrate, the polysilicon portion being located on the first P-type portion.
The application provides a semiconductor device, which comprises a substrate, a light reflection layer and an epitaxial layer, wherein the light reflection layer is arranged on the substrate; the epitaxial layer is arranged on one side of the light reflection layer, which is far away from the substrate, the surface of the epitaxial layer, which is far away from the substrate, is provided with a P-type doping part, a first P-type part and a floating diffusion part, the P-type doping part is in contact with the first P-type part, the P-type doping part is in contact with the light reflection layer, the first P-type part is arranged at intervals with the light reflection layer, and the floating diffusion part is positioned in the first P-type part and is arranged at intervals with the P-type doping part. The light reflection layer is arranged between the epitaxial layer and the substrate, so that when light passes through the epitaxial layer, the light is reflected at the interface of the epitaxial layer and the light reflection layer, and then the light is reflected back into the epitaxial layer, thereby achieving the purpose of reducing the absorption length, reducing the light transmittance, improving the light conversion efficiency, and simultaneously, reducing the possibility of crosstalk of the light between the substrates due to the fact that most of the light is reflected by the light reflection layer, and improving the performance of devices.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a semiconductor device provided in the present application.
Reference numerals:
10. a semiconductor device; 100. a substrate; 200. a light reflection layer; 300. an epitaxial layer; 310. a P-type doping part; 320. a first P-type part; 330. a floating diffusion portion; 340. a first N-type portion; 350. a second P-type section; 360. a second N-type portion; 370. a doping section; 400. a polysilicon portion.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. The various embodiments described below and their technical features can be combined with each other without conflict.
Reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
The application provides a semiconductor device, which comprises a substrate, a light reflection layer and an epitaxial layer, wherein the light reflection layer is arranged on the substrate; the epitaxial layer is arranged on one side of the light reflection layer, which is far away from the substrate, the surface of the epitaxial layer, which is far away from the substrate, is provided with a P-type doping part, a first P-type part and a floating diffusion part, the P-type doping part is in contact with the first P-type part, the P-type doping part is in contact with the light reflection layer, the first P-type part is arranged at intervals with the light reflection layer, and the floating diffusion part is positioned in the first P-type part and is arranged at intervals with the P-type doping part.
In this application, through setting up the light reflection layer between epitaxial layer and substrate for when light when passing the epitaxial layer, take place the reflection at epitaxial layer and light reflection layer's interface department, thereby with light reflection back in the epitaxial layer, thereby reach the purpose that reduces absorption length, and reduce the transmissivity of light, thereby improve light conversion efficiency, simultaneously, because of most light is reflected by the light reflection layer, reduced the light and shone in the substrate, thereby reduce the possibility that light appears in the cross-talk between the substrate, thereby improved the performance of device.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a semiconductor device provided in the present application. The present application provides a semiconductor device 10. The semiconductor device 10 includes a substrate 100, a light reflection layer 200, an epitaxial layer 300, and a polysilicon portion 400. The substrate 100 is a silicon substrate 100. The light reflection layer 200 is disposed on the substrate 100.
The epitaxial layer 300 is disposed on a side of the light reflection layer 200 away from the substrate 100, the surface of the epitaxial layer 300 away from the substrate 100 is provided with a P-type doped portion 310, a first P-type portion 320, a floating diffusion portion 330, a first N-type portion 340, a second P-type portion 350 and a second N-type portion 360, the P-type doped portion 310 is disposed in contact with the first P-type portion 320 and the light reflection layer 200, the first N-type portion 340 is disposed between the P-type doped portion 310 and the second P-type portion 350, the first N-type portion 340 and the second P-type portion 350 are disposed in contact with the first P-type portion 320, a shallow trench structure is disposed in the second P-type portion 350, a projection of the shallow trench structure does not overlap with a projection of the first N-type portion 340 in a direction of the epitaxial layer 300 towards the substrate 100, the first P-type portion 320 is disposed at a distance from the light reflection layer 200, the floating diffusion portion 330 is disposed in the first P-type portion 320 at a distance from the second P-type portion 320, the floating diffusion portion 330 is disposed in the second P-type portion 310 and the second N-type portion 360, the first N-type doped portion 340 is disposed at a distance from the first N-type portion 360, the first N-type doped portion 340 is disposed at a distance from the second P-type portion 360, the second P-type doped portion is disposed at a distance from the second N-type portion of the second P-type portion 340, the second P-type doped portion is different from the first N-type portion 360, the first N-type doped portion is disposed at a different from the first N-type doped portion from the N-type doped portion 360, and the first N-type doped portion is disposed at a different from the N-type doped portion from the N-doped portion, and the N-doped portion is different from the P-doped portion, and the P-doped portion is. The thickness r of the epitaxial layer 300 is 3-4um. Specifically, the thickness r of the epitaxial layer 300 may be 3um, 3.2um, 3.5um, 3.8um, 4um, or the like.
The polysilicon portion 400 is disposed on a surface of the epitaxial layer 300 away from the substrate 100, and is located on the first P-type portion 320 and connected to a corresponding conductive line for transmitting a corresponding signal.
In the existing semiconductor device, if the wavelength of light changes to the non-visible light region, such as infrared light, the existing epitaxial layer design cannot meet the requirement of converting the non-visible light, so that the light conversion efficiency is poor. In this application, by disposing the light reflecting layer 200 between the epitaxial layer 300 and the substrate 100, when light passes through the epitaxial layer 300, light is reflected at the interface between the epitaxial layer 300 and the light reflecting layer 200, so that the light is reflected back into the epitaxial layer 300, thereby achieving the purpose of reducing the absorption length and reducing the transmittance of the light, thereby improving the light conversion efficiency, and simultaneously, since most of the light is reflected by the light reflecting layer 200, the light is reduced from being irradiated into the substrate 100, thereby reducing the possibility of crosstalk of the light between the substrates 100, and further improving the performance of the device.
In this application, by disposing the light reflection layer 200 between the epitaxial layer 300 and the substrate 100, when the wavelength of light received by the semiconductor device 10 changes, the light conversion efficiency can be improved without increasing the thickness of the epitaxial layer 300, and meanwhile, the production cost of the device is reduced.
The average distance that a particle travels until it is injected into a substance to cause an interaction that the particle is absorbed or converted into another particle is the absorption length.
In one embodiment, the material of the light reflecting layer 200 includes at least one of silicon nitride, silicon oxynitride, and silicon oxide.
In the present application, the light reflecting layer 200 is formed by using silicon nitride, silicon oxynitride and silicon oxide, so as to further increase the reflection amount of light at the interface between the epitaxial layer 300 and the light reflecting layer 200, so that more light is reflected back into the epitaxial layer 300, thereby further achieving the purpose of reducing the absorption length, reducing the transmittance of light, and simultaneously further reducing the possibility of crosstalk of light between the substrates 100, so as to improve the performance of the device.
In one embodiment, the thickness d of the light reflecting layer 200 is 400-1000nm. Specifically, the thickness d of the light reflection layer 200 may be 400nm, 500nm, 600nm, 720nm, 830nm, 1000nm, or the like.
In the present application, the thickness d of the light reflection layer 200 is set to 400-1000nm, so as to further increase the reflection amount of the light at the interface between the epitaxial layer 300 and the light reflection layer 200, so that more light is reflected back into the epitaxial layer 300, thereby further achieving the purpose of reducing the absorption length, reducing the transmittance of the light, and simultaneously further reducing the possibility of crosstalk of the light between the substrates 100, so as to improve the performance of the device.
In an embodiment, when the thickness d of the light reflecting layer 200 is 620nm, the light reflectivity of the light reflecting layer 200 can reach more than 90% to further reduce the absorption length, reduce the light transmittance, and further reduce the possibility of crosstalk between the substrates 100, thereby improving the performance of the device.
In an embodiment, when the thickness d of the light reflecting layer 200 is 750nm, the light reflectivity of the light reflecting layer 200 can reach more than 95% to further reduce the absorption length, reduce the light transmittance, and further reduce the possibility of crosstalk between the substrates 100, thereby improving the performance of the device.
In an embodiment, the side of the epitaxial layer 300 is provided with a plurality of spacers.
In this application, the side of epitaxial layer 300 is formed into the isolation portion to avoid light leakage from the side of epitaxial layer 300, thereby achieving the purpose of reducing the absorption length, ensuring the effect of light conversion, and simultaneously, avoiding the influence of light on other structures, thereby ensuring the performance of the device.
In an embodiment, the reflectivity of the isolation portion is smaller than the reflectivity of the light reflection layer 200, so that the light reflection layer 200 and the isolation portion achieve the effect of improving the light reflectivity and reducing the cost of materials.
In one embodiment, the spacer is an ion doped portion. Specifically, by performing ion implantation on the side surface of the epitaxial layer 300, the ion doping portion may be N-type doping or P-type doping, so as to form a spacer portion, so as to prevent light from leaking from the side surface of the epitaxial layer 300, ensure the effect of light conversion, and simultaneously prevent light from affecting other structures, thereby ensuring the performance of the device. .
In one embodiment, the material of the isolation portion is an insulating material. Specifically, a deep trench is formed in the side surface of the epitaxial layer 300, an insulating material is filled in the deep trench, the insulating material comprises at least one of silicon nitride, silicon oxynitride and silicon oxide, a deep trench structure capable of blocking light is formed, the material filled in the deep trench is different from the material of the light reflection layer, so that light is prevented from leaking from the side surface of the epitaxial layer 300, the light conversion effect is ensured, meanwhile, the influence of light on other structures is avoided, and the performance of a device is ensured.
In an embodiment, the light reflecting layer 200 has a plurality of protrusions on a surface near the epitaxial layer 300, the protrusions are used for reflecting light, every two adjacent protrusions can be arranged at intervals or connected, and the protrusions can be circular, triangular, quadrilateral, hexagonal or irregular in shape in a direction from the epitaxial layer to the substrate, which is not limited herein.
In this application, a protrusion for reflecting light is disposed on a surface of the light reflection layer 200, which is close to the epitaxial layer 300, so that light can be reflected from multiple angles, and the light is uniformly distributed in the epitaxial layer 300, so as to further improve the light conversion efficiency of the epitaxial layer 300, and reduce dark current, thereby improving the performance of the semiconductor device 10.
In one embodiment, the protrusions have microstructures on their upper surfaces.
In this application, the microstructures are disposed on the upper surface of the protrusions for reflecting light, so that light can be further reflected from multiple angles, and light is uniformly distributed in the epitaxial layer 300, so that the light conversion efficiency of the epitaxial layer 300 is further improved, and dark current is reduced, thereby improving the performance of the semiconductor device 10.
The present application provides a semiconductor device 10, by disposing a light reflection layer 200 between an epitaxial layer 300 and a substrate 100, when light passes through the epitaxial layer 300, light is reflected at an interface between the epitaxial layer 300 and the light reflection layer 200, so that the light is reflected back into the epitaxial layer 300, thereby achieving the purpose of reducing the absorption length, without increasing the thickness of the epitaxial layer 300, and reducing the transmittance of the light, thereby improving the light conversion efficiency and reducing the cost.
The foregoing embodiments are merely examples of the present application, and are not intended to limit the scope of the patent application, so that all equivalent structures or equivalent processes using the descriptions and the drawings of the present application, such as the combination of technical features of the embodiments, or direct or indirect application to other related technical fields, are included in the scope of the patent protection of the present application.
Claims (10)
1. A semiconductor device, comprising:
a substrate;
a light reflection layer disposed on the substrate;
the epitaxial layer is arranged on one side, far away from the substrate, of the light reflection layer, one side, far away from the substrate, of the epitaxial layer is provided with a P-type doping part, a first P-type part and a floating diffusion part, the P-type doping part is in contact with the first P-type part, the P-type doping part is in contact with the light reflection layer, the first P-type part is in interval arrangement with the light reflection layer, and the floating diffusion part is located in the first P-type part and is in interval arrangement with the P-type doping part.
2. The semiconductor device according to claim 1, wherein a material of the light reflecting layer includes at least one of silicon nitride, silicon oxynitride, and silicon oxide.
3. The semiconductor device according to claim 1, wherein the thickness of the light reflecting layer is 400 to 1000nm.
4. A semiconductor device according to any one of claims 1-3, characterized in that the side of the epitaxial layer is provided with spacers.
5. The semiconductor device according to claim 4, wherein the isolation portion is an ion doped portion.
6. The semiconductor device according to claim 4, wherein a material of the spacer is an insulating material.
7. A semiconductor device according to any of claims 1-3, characterized in that the thickness of the epitaxial layer is 3-4um.
8. The semiconductor device of any of claims 1-3, further comprising a first N-type portion and a second P-type portion, the first N-type portion being located between the P-type doped portion and the second P-type portion.
9. The semiconductor device of any of claims 1-3, further comprising a second N-type portion in the first P-type portion, the second N-type portion being located on a side of the floating diffusion away from the P-type doping and spaced apart from the floating diffusion.
10. A semiconductor device according to any of claims 1-3, characterized in that the side of the epitaxial layer remote from the substrate is provided with a polysilicon portion, which is located on the first P-type portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310690284.0A CN116435378A (en) | 2023-06-12 | 2023-06-12 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310690284.0A CN116435378A (en) | 2023-06-12 | 2023-06-12 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
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| CN116435378A true CN116435378A (en) | 2023-07-14 |
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| CN202310690284.0A Pending CN116435378A (en) | 2023-06-12 | 2023-06-12 | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers |
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| JP2004071817A (en) * | 2002-08-06 | 2004-03-04 | Canon Inc | Imaging sensor |
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| US20090200586A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with silicide light reflecting layer |
| CN103493202A (en) * | 2011-05-31 | 2014-01-01 | 松下电器产业株式会社 | Solid-state imaging device and manufacturing method therefor |
| US20160118431A1 (en) * | 2014-10-24 | 2016-04-28 | Stmicroelectronics Sa | Front-side imager having a reduced dark current on soi substrate |
| CN106206896A (en) * | 2016-08-22 | 2016-12-07 | 厦门市三安光电科技有限公司 | Compound pattern Sapphire Substrate and the manufacture method of epitaxial wafer thereof |
| CN112902111A (en) * | 2021-03-01 | 2021-06-04 | 武汉华星光电技术有限公司 | Backlight module |
| CN113745383A (en) * | 2020-05-29 | 2021-12-03 | 聚灿光电科技（宿迁）有限公司 | Patterned substrate, LED epitaxial structure and patterned substrate manufacturing method |
-
2023
- 2023-06-12 CN CN202310690284.0A patent/CN116435378A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004071817A (en) * | 2002-08-06 | 2004-03-04 | Canon Inc | Imaging sensor |
| US20070114629A1 (en) * | 2005-11-21 | 2007-05-24 | Dialog Semiconductor, Gmbh | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor |
| US20090200586A1 (en) * | 2008-02-08 | 2009-08-13 | Omnivision Technologies, Inc. | Backside illuminated imaging sensor with silicide light reflecting layer |
| CN103493202A (en) * | 2011-05-31 | 2014-01-01 | 松下电器产业株式会社 | Solid-state imaging device and manufacturing method therefor |
| US20160118431A1 (en) * | 2014-10-24 | 2016-04-28 | Stmicroelectronics Sa | Front-side imager having a reduced dark current on soi substrate |
| CN106206896A (en) * | 2016-08-22 | 2016-12-07 | 厦门市三安光电科技有限公司 | Compound pattern Sapphire Substrate and the manufacture method of epitaxial wafer thereof |
| CN113745383A (en) * | 2020-05-29 | 2021-12-03 | 聚灿光电科技（宿迁）有限公司 | Patterned substrate, LED epitaxial structure and patterned substrate manufacturing method |
| CN112902111A (en) * | 2021-03-01 | 2021-06-04 | 武汉华星光电技术有限公司 | Backlight module |
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