CN116435160A - High-efficiency low-power consumption electron source and preparation method thereof - Google Patents
High-efficiency low-power consumption electron source and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
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Abstract
The invention relates to a high-efficiency low-power consumption electron source and a preparation method thereof. The high-efficiency low-power-consumption electron source comprises a cathode structure and an anode structure; the cathode structure comprises a cathode substrate, a bottom electrode, an insulating layer and a top electrode which are sequentially stacked, wherein the overlapping part of the bottom electrode and the top electrode is provided with a tip structure, the insulating layer is a boron nitride layer, and the top electrode is a graphene electrode; the anode structure comprises an anode substrate and an anode electrode which are stacked; the anode structure is positioned on one side of the top electrode of the cathode structure, and the cathode structure is positioned on one side of the anode electrode of the anode structure. The high-efficiency low-power consumption electron source can realize high emission efficiency and high monochromaticity at the same time, has high preparation success rate, and can be widely applied to high-precision electron microscopes, parallel electron beam etching, flat X-ray sources and vacuum photo-thermal energy conversion devices.
Description
Technical Field
The invention relates to the technical field of vacuum electron sources, in particular to a high-efficiency low-power consumption electron source and a preparation method thereof.
Background
The metal-insulator-metal (MIM) cathode can theoretically have the advantages of fast cold cathode response, narrow electron energy spectrum, easy miniaturization, good stability of hot cathode and the like, so that the metal-insulator-metal cathode is adopted as an ideal cathode for realizing a next-generation high-precision electron microscope, parallel electron beam etching, a flat X-ray source and a vacuum photo-thermal energy conversion device, such as a medium-low temperature vacuum thermoelectric conversion device provided by China patent with the publication number of CN 110277292A. MIM cathodes are often used for preparing vacuum electron sources, however, most of MIM cathodes reported in literature still do not reach application standards in performance, and have a lot of gaps from the actual realization of application, and the main reasons are that: (1) Electrons in the traditional MIM cathode are severely scattered by crystal lattices during transportation, so that energy loss occurs, and the electron energy of a corresponding electron source is wider and the electron emission efficiency is lower; (2) The MIM cathode has high requirements on flatness and lattice defects of the insulating layer film, which can easily cause device failure once the leakage path is formed.
Constructing a MIM cathode from a two-dimensional vertical heterostructure of material with better crystallinity and fewer interface defects can greatly reduce electron scattering therein and avoid formation of leakage channels, but it is still difficult for the technology to simultaneously provide a corresponding electron source with high emission efficiency and high monochromaticity, for example: in recent years, many cathodes of graphene/silicon oxide/silicon stacked structure have been studied, and the corresponding electron sources have high electron emission efficiency, but the scattering of the transported electrons in the cathode in silicon oxide is serious, which makes it difficult to provide the electron sources with high monochromaticity.
Therefore, the problem that the current MIM cathode vacuum electron source cannot achieve high emission efficiency and high monochromaticity is required to be solved.
Disclosure of Invention
The primary purpose of the present invention is to overcome the problem that the current MIM cathode vacuum electron source cannot have both high emission efficiency and high monochromaticity, and provide a high-efficiency low-power consumption electron source. The high-efficiency low-power consumption electron source can realize high emission efficiency and high monochromaticity at the same time, has high preparation success rate, and can be widely applied to high-precision electron microscopes, parallel electron beam etching, flat X-ray sources and vacuum photo-thermal energy conversion devices.
The invention further aims to provide a preparation method of the high-efficiency low-power consumption electron source.
The above object of the present invention is achieved by the following technical solutions:
a high-efficiency low-power consumption electron source comprises a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate, a bottom electrode, an insulating layer and a top electrode which are sequentially stacked, wherein the overlapping part of the bottom electrode and the top electrode is provided with a tip structure, the insulating layer is a boron nitride layer, and the top electrode is a graphene electrode;
the anode structure comprises an anode substrate and an anode electrode which are stacked;
the anode structure is positioned on one side of the top electrode of the cathode structure, and the cathode structure is positioned on one side of the anode electrode of the anode structure.
The working process of the high-efficiency low-power consumption electron source comprises the following steps: when the cathode anode electrode works, a certain voltage is applied between the top electrode and the bottom electrode, a strong electric field is generated to enable electrons to tunnel to the top electrode from the bottom electrode, electrons with energy higher than potential barrier on the surface of the top electrode in tunneling electrons can be emitted to vacuum, and the electrons move to the anode electrode under the action of an anode electric field, so that emission current is formed.
According to the invention, the inventor researches find that the insulating layer is made of boron nitride and the top electrode is made of graphene, and the boron nitride film has better crystallinity, low atomic number and smaller electron collision section, so that the electron source has high monochromaticity. However, when the insulating layer is selected from boron nitride and the top electrode is selected from graphene, the band structure between the boron nitride and the graphene easily causes holes in the graphene to tunnel through the boron nitride and move to the bottom silicon electrode, so that a hole current is formed, and the hole current does not contribute to the vacuum emission current, so that the hole current can reduce the electron emission efficiency of the electron source.
In the prior art, the tip structure is commonly arranged in a common cold cathode device, and is rarely applied to a planar cathode (the cathode structure of the invention belongs to the planar cathode), and the purpose of the tip structure is to reduce the working voltage in the cold cathode device. According to the invention, when the insulating layer is boron nitride and the top electrode is graphene, the tip structure is arranged on the bottom electrode, so that the electric field in the insulating layer, which is close to the tip structure of the bottom electrode, is larger than the electric field in the insulating layer, which is close to the top electrode, to form nonlinear electric field distribution, and the nonlinear electric field distribution can avoid hole tunneling current from the top electrode to the bottom electrode, thereby improving the electron emission efficiency and reducing the power consumption of an electron source. In addition, due to the field enhancement effect of the tip structure, electron tunneling mainly occurs at the tip structure position of the bottom electrode, so that the requirements of the electron source on the overall uniformity and lattice defects of the film are reduced, and the preparation success rate of the electron source is improved.
The high-efficiency low-power consumption electron source can realize high emission efficiency and high monochromaticity at the same time, has high preparation success rate, and can be widely applied to high-precision electron microscopes, parallel electron beam etching, flat X-ray sources and vacuum photo-thermal energy conversion devices.
Preferably, the cathode substrate is an insulating substrate.
More preferably, the insulating substrate is a glass substrate, a ceramic substrate, a metal substrate with an insulating material coated on the surface, or a silicon substrate with an insulating material coated on the surface.
Preferably, the thickness of the cathode substrate is 0.1 to 5mm.
Preferably, the bottom electrode is a metal electrode, a semiconductor electrode, a conductive two-dimensional material electrode or a conductive one-dimensional nanowire electrode.
More preferably, the metal electrode is a chromium electrode, a gold electrode, or a copper electrode.
More preferably, the semiconductor electrode is an ITO electrode, an AZO electrode, or a silicon electrode.
More preferably, the conductive two-dimensional material electrode is a graphene electrode.
More preferably, the conductive one-dimensional nanowire electrode is a carbon nanotube, a silicon nanowire, or a lanthanum hexaboride nanowire.
Preferably, the number of the tip structures is 1 to 100.
By controlling the number of tip structures, the electric field shielding effect can be more effectively controlled, thereby making the electron emission efficiency of the electron source higher.
Preferably, the angle α of the tip structure is less than or equal to 30 °.
At this angle, the effect of field enhancement is stronger and the electron emission effect of the electron source is higher.
More preferably, the angle of the tip structure is 1 DEG.ltoreq.alpha.ltoreq.30 deg.
Preferably, the thickness of the bottom electrode is 1-10 nm.
The thickness of the bottom electrode is regulated within the range, the field enhancement effect of the tip structure is stronger, and the electron emission effect of the electron source is higher.
Preferably, the insulating layer is a hexagonal boron nitride film layer.
Preferably, the thickness of the insulating layer is 5 to 20nm.
Preferably, the thickness of the top electrode is 0.3-5 nm.
Preferably, the anode substrate is an insulating substrate.
More preferably, the insulating substrate is a glass substrate, a ceramic substrate, a metal substrate with an insulating material coated on the surface, or a silicon substrate with an insulating material coated on the surface.
Preferably, the anode electrode is a metal electrode or a transparent semiconductor electrode.
More preferably, the metal electrode is a chromium electrode, a gold electrode, or a copper electrode.
More preferably, the transparent semiconductor electrode is an ITO electrode or an AZO electrode.
The invention also provides a preparation method of the high-efficiency low-power consumption electron source, which comprises the following steps:
s1, preparing a cathode substrate and an anode substrate;
s2, preparing a bottom electrode with a tip structure on the cathode substrate, preparing an insulating layer on the bottom electrode, and preparing a top electrode on the insulating layer to obtain a cathode structure for later use; preparing an anode electrode on the anode substrate to obtain an anode structure for later use;
s3, assembling the cathode structure and the anode structure to obtain the high-efficiency low-power-consumption electron source.
The preparation method of each component is the prior art and can be obtained by routine selection by a person skilled in the art according to the prior art.
Preferably, step S1 further includes a step of cleaning the cathode substrate and the anode substrate.
Preferably, the bottom electrode in step S2 is prepared by micromachining or transferring.
More preferably, the micromachining process includes photolithography, thin film deposition, etching, and photoresist removal steps.
More preferably, the transfer mode is dry transfer or wet transfer.
Compared with the prior art, the invention has the beneficial effects that:
the high-efficiency low-power consumption electron source can realize high emission efficiency and high monochromaticity at the same time, has high preparation success rate, and can be widely applied to high-precision electron microscopes, parallel electron beam etching, flat X-ray sources and vacuum photo-thermal energy conversion devices.
Drawings
Fig. 1 is a schematic diagram of a high-efficiency low-power electron source according to embodiment 1. Fig. 1a is a front view of a high-efficiency low-power electron source, and fig. 1b is a top view of the high-efficiency low-power electron source.
Fig. 2 is a schematic diagram of the structure of the high-efficiency low-power electron source of embodiment 2.
Fig. 3 is a schematic diagram of a method for preparing a cathode structure of the high-efficiency low-power electron source of embodiment 1. Wherein, the left side drawing is the front view of structure, and the right side drawing is the top view of structure.
Fig. 4 is a schematic diagram of a method for preparing an anode structure of a high-efficiency low-power electron source according to example 1. Wherein, the left side drawing is the front view of structure, and the right side drawing is the top view of structure.
Fig. 5 is a simulation result of electric field distribution of the cathode structure of the high efficiency low power electron source of example 1. Fig. 5a is a top view of the simulation structure, fig. 5b is a front view of the simulation structure, and fig. 5c is an electric field distribution simulation result.
In the figure, 1 is a cathode substrate, 2 is a bottom electrode, 3 is an insulating layer, 4 is a top electrode, 5 is an anode substrate, and 6 is an anode electrode.
Detailed Description
In order to more clearly and completely describe the technical scheme of the invention, the invention is further described in detail through specific examples.
It should be understood that the same or similar reference numerals in the drawings of the embodiments of the invention correspond to the same or similar components; in the description of the present invention, it should be understood that, if any, terms such as "upper," "lower," "left," "right," "top," "bottom," "inner," "outer," and the like indicate an orientation or a positional relationship based on that shown in the drawings, only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the devices or elements being referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus the words describing the positional relationship in the drawings are merely for illustration and not to be construed as limiting the present patent.
Furthermore, the terms "first," "second," and the like, if any, are used for descriptive purposes only and are primarily for distinguishing between different devices, elements, or components (the particular categories and configurations may be the same or different) and are not intended to indicate or imply relative importance or quantity of the devices, elements, or components indicated, but are not to be construed as indicating or implying relative importance.
Unless specifically stated otherwise, the methods and apparatus employed in the present invention are those conventional in the art.
Example 1
The present embodiment provides a high-efficiency low-power-consumption electron source, as shown in fig. 1a (front view), which includes a cathode structure located below and an anode structure located above; the cathode structure comprises a cathode substrate 1, a bottom electrode 2, an insulating layer 3 and a top electrode 4 which are sequentially stacked, and the anode structure comprises an anode substrate 5 and an anode electrode 6 which are stacked; the anode structure is positioned on one side of the top electrode 4 of the cathode structure; the cathode structure is located on the anode electrode 6 side of the anode structure. The cathode substrate 1 is a 300nm thick silicon oxide wafer; the bottom electrode 2 is silicon with the thickness of 2 nm; the insulating layer 3 is boron nitride with the thickness of 5 nm; the top electrode 4 is a single-layer graphene; the anode substrate 5 is ITO glass; the anode electrode 6 was a gold electrode 1 μm thick. Fig. 1b is a top view of the high efficiency low power electron source according to the present embodiment, and it can be seen from fig. 1b that the portion of the cathode structure where the bottom electrode 2 overlaps the top electrode 4 has a tip structure with an angle α of about 28 °.
The working process of the high-efficiency low-power-consumption electron source in the embodiment is as follows: when in work, the bottom electrode is grounded, and the top electrode applies a grid voltage V g The anode electrode applies an anode voltage V a . Because the bottom electrode has a tip structure, the field enhancement effect of the bottom electrode can enable the surface electric field of the tip structure of the bottom electrode to be higher than that of the top electrode, so that a stronger electric field is generated to enable electrons to tunnel from the bottom electrode to the top electrode, and holes are prevented from tunneling from the top graphene to the bottom electrode. Electrons with energy higher than the surface barrier of the top electrode in tunneling electrons can be emitted to vacuum and have positive electrode voltage V a Is moved to the anode electrode by the action of (a) to form an emission current.
The high-efficiency low-power consumption electron source can realize high emission efficiency and high monochromaticity at the same time, and the preparation success rate is high.
Example 2
The present embodiment provides a high-efficiency low-power electron source, whose top view is shown in fig. 2, and the embodiment is different from embodiment 1 in that: the bottom electrode 2 of the cathode structure has three tip structures. The high-efficiency low-power-consumption electron source of the embodiment has an array structure.
Example 3
The embodiment provides a method for preparing the high-efficiency low-power-consumption electron source in embodiment 1, which comprises the following steps:
3.1 preparing a cathode substrate 1 and an anode substrate 5, and cleaning them separately.
3.2 as shown in fig. 3, the cathode substrate 1 (fig. 3 a) after being cleaned is prepared, the bottom electrode 2 (fig. 3 b) with a specific tip structure is prepared on the surface of the cathode substrate 1 by means of photoetching, developing, magnetron sputtering coating and photoresist removing, then an insulating layer 3 (fig. 3 c) is transferred and prepared on the bottom electrode 2 and the cathode substrate 1 which is not covered by the bottom electrode 2, and finally a top electrode 4 (fig. 3 d) is transferred and prepared on the insulating layer 3, so that a cathode structure is obtained for standby; as shown in fig. 4, the anode substrate 5 (fig. 4 a) after cleaning is prepared, and the anode electrode 6 (fig. 4 b) is prepared on the surface of the anode substrate 5 to obtain an anode structure for standby. In fig. 3a to d and fig. 4a to b, the left side view is a front view of the structure, and the right side view is a top view of the structure.
And 3.3, assembling the cathode structure and the anode structure together to obtain the high-efficiency low-power consumption electron source.
The preparation method of the present invention for preparing a high-efficiency low-power-consumption electron source (e.g., embodiment 2) based on components of other materials or components of other shapes and sizes can be performed according to the steps of the present embodiment.
Example 4
In this embodiment, the electric field distribution of the tip structure (α= -28 °) of the high-efficiency low-power electron source in embodiment 1 is simulated, and the simulation is implemented by COMSOL MULTIPHYSICS software, in which the bottom electrode 2 is grounded and the top electrode 4 applies a voltage of 5V. As a result of the simulation, fig. 5a is a plan view of the simulated cathode structure, fig. 5b is a front view of the simulated cathode structure, and fig. 5c is an electric field distribution in the arrow z direction at the center of fig. 5 b. As can be seen from fig. 5c, the highest electric field near the bottom electrode 2 is about 3.8V/nm, and the highest electric field near the top electrode 4 is about 0.39V/nm, which is about 10 times different, and in the case where the insulating layer 3 is boron nitride, the bottom electrode 2 and the top electrode 4 are graphene, the electron tunneling barrier from the bottom electrode 2 to the top electrode 4 is about 4.5eV, and the hole tunneling barrier from the top electrode 4 to the bottom electrode 2 is about 1.5eV. According to the field emission tunneling current formula
(F is the electric field, phi is the work function, A and B are constants), and under this simulated electric field distribution, the electron tunneling current is about 2.7e7 times the hole tunneling current, and therefore, the hole tunneling current can be ignored.
The insulating layer is made of boron nitride and the top electrode is made of graphene, and the boron nitride film has better crystallinity, low atomic number and smaller electron collision section, so that the electron source has high monochromaticity; the simulation result of the embodiment shows that the bottom electrode with the tip structure in the graphene/boron nitride vertical heterojunction can obtain high electron emission efficiency, namely the high-efficiency low-power-consumption electron source can realize high emission efficiency and high monochromaticity at the same time, and the result proves the feasibility of the high-efficiency low-power-consumption electron source.
It should be noted that the high efficiency and low power consumption electron source of the present invention is not limited to a single structure (example 1), but can be implemented in an array structure (example 2).
It is to be understood that the above examples of the present invention are provided by way of illustration only and not by way of limitation of the embodiments of the present invention. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the invention are desired to be protected by the following claims.
Claims (10)
1. The high-efficiency low-power consumption electron source is characterized by comprising a cathode structure and an anode structure;
the cathode structure comprises a cathode substrate (1), a bottom electrode (2), an insulating layer (3) and a top electrode (4) which are sequentially stacked, wherein the overlapping part of the bottom electrode (2) and the top electrode (4) is provided with a tip structure, the insulating layer (3) is a boron nitride layer, and the top electrode (4) is a graphene electrode;
the anode structure comprises an anode substrate (5) and an anode electrode (6) which are stacked;
the anode structure is positioned on the side of the top electrode (4) of the cathode structure, and the cathode structure is positioned on the side of the anode electrode (6) of the anode structure.
2. The high efficiency low power consumption electron source according to claim 1, wherein the cathode substrate (1) is an insulating substrate.
3. The high efficiency, low power consumption electron source according to claim 1, wherein the bottom electrode (2) is a metal electrode, a semiconductor electrode, a conductive two-dimensional material electrode or a conductive one-dimensional nanowire electrode.
4. The high efficiency, low power electron source of claim 1, wherein the number of tip structures is 1 to 100.
5. The high efficiency, low power electron source of claim 1, wherein the tip structure angle α is less than or equal to 30 °.
6. The high efficiency, low power consumption electron source according to claim 1, wherein the bottom electrode (2) has a thickness of 1-10 nm.
7. The high efficiency, low power consumption electron source according to claim 1, wherein the anode substrate (5) is an insulating substrate.
8. A high efficiency low power consumption electron source according to claim 1, wherein the anode electrode (6) is a metal electrode or a transparent semiconductor electrode.
9. The method for preparing the high-efficiency low-power-consumption electron source according to any one of claims 1 to 8, comprising the steps of:
s1, preparing a cathode substrate (1) and an anode substrate (5);
s2, preparing a bottom electrode (2) with a tip structure on the cathode substrate (1), preparing an insulating layer (3) on the bottom electrode (2), and preparing a top electrode (4) on the insulating layer (3) to obtain a cathode structure for later use; preparing an anode electrode (6) on the anode substrate (5) to obtain an anode structure for later use;
s3, assembling the cathode structure and the anode structure to obtain the high-efficiency low-power-consumption electron source.
10. The preparation method according to claim 9, characterized in that the bottom electrode (2) is prepared by means of micromachining or transfer.
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