CN116430494A - Grating based on ITO film and preparation method thereof - Google Patents
Grating based on ITO film and preparation method thereof Download PDFInfo
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- CN116430494A CN116430494A CN202310392030.0A CN202310392030A CN116430494A CN 116430494 A CN116430494 A CN 116430494A CN 202310392030 A CN202310392030 A CN 202310392030A CN 116430494 A CN116430494 A CN 116430494A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000002834 transmittance Methods 0.000 claims description 20
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 230000003287 optical effect Effects 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 24
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011787 zinc oxide Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005304 optical glass Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1866—Transmission gratings characterised by their structure, e.g. step profile, contours of substrate or grooves, pitch variations, materials
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B2005/1804—Transmission gratings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Treatment Of Optical Elements (AREA)
Abstract
The invention relates to an ITO film-based grating and a preparation method thereof, wherein the ITO film grating is designed into a concentric circular ridge structure, and meanwhile, a high-conductivity and high-doping ITO film substrate is selected, so that the ZnO doping concentration of the ITO film is controlled to be 9% -11%, uniform refractive index is correspondingly generated by uniform voltage distribution, and diffraction noise of a light field can be reduced.
Description
Technical Field
The invention relates to a grating, in particular to a grating based on an ITO film and a preparation method thereof.
Background
Gratings are important optical components and have very wide applications in many fields such as metrology, radio astronomy, integrated optics, optical communications and information processing. Although the technology of the traditional grating is mature at present, the diffraction and reflection efficiency of the grating is not adjustable, the requirements of modern display, communication, integrated optics and optical storage technologies are difficult to meet, the application range of the grating is severely limited, the application range of the grating is increased, and the special regulation and control of incident light rays are the problems to be solved.
Disclosure of Invention
In view of the above problems, the present invention provides an ITO film-based grating, comprising:
a transparent substrate;
an ITO film having a thickness of 200 μm and disposed above the transparent substrate;
SiO 2 film of SiO 2 The film thickness was 20. Mu.m, and was disposed above the ITO film.
Further, the ridge structure formed by the ITO film is a plurality of concentric circles, each concentric circle is provided with two small openings, the two small openings are arranged at 180 degrees, and the small openings on the two concentric circles with adjacent radiuses are arranged at 90 degrees.
Further, a first high transmittance film is provided over the ITO film.
Further, the first high transmittance film includes a HfO layer and a ZnO layer.
Further, a second high transmittance film is provided under the transparent substrate.
Further, the second high transmittance film comprises a HfO layer and SiO 2 A layer.
The invention further provides a grating preparation method based on the ITO film, which comprises the following steps:
s1: selecting a transparent substrate;
s2: sputtering an ITO film;
s3: sputtering SiO 2 The film is kept for 20 minutes in an oxygen environment at 200 ℃ after being subjected to high-temperature annealing treatment;
s4: coating a curing adhesive;
s5: manufacturing a negative mask, putting the negative mask into an optical system, and irradiating the curing adhesive by using an ultraviolet mercury lamp;
s6: washing the non-coagulated cured adhesive with alcohol;
s7: coating etching liquid, and standing for 10 to 15 minutes;
s8: washing with clear water and drying.
Further, step S8 further includes step S9: evaporating high-transmittance film.
According to the grating based on the ITO film and the preparation method thereof, the grating of the ITO film is designed to be of a concentric circular ridge structure, meanwhile, the ITO film substrate with high conductivity and high doping is selected, the ZnO doping concentration range of the ITO film is controlled to be 9% -11%, uniform refractive index is correspondingly generated by uniform voltage distribution, and diffraction noise of a light field can be reduced.
Drawings
FIG. 1 is a schematic diagram showing the relationship between the refractive index of an ITO film and the voltage applied to both sides of the film;
FIG. 2 is a schematic diagram of a grating structure based on an ITO film according to the present invention;
fig. 3 is a schematic diagram of voltage distribution of an ITO film-based grating according to the present invention.
Detailed Description
For a further understanding of the objects, construction, features, and functions of the invention, reference should be made to the following detailed description of the preferred embodiments.
The refractive index of the ITO film is related to the voltage applied across the film, and can be approximated to a linear relationship within a certain range, see fig. 1, fig. 1 is a schematic diagram of the refractive index of the ITO film and the voltage applied across the film. The voltage across the ITO film was around 2V, and a refractive index change of more than 5% was obtained. Particularly, when the voltage on the two sides of the ITO film is larger, the refractive index of the ITO film is smaller than 1, and abnormal refractive index change exists, so that special regulation and control on incident light can be realized. The invention provides an ITO film-based grating, which comprises a transparent substrate, an ITO film and SiO 2 The transparent substrate is generally quartz glass, transparent polyimide film or other optical glass, and the ITO film is arranged above the transparent substrate by a magnetron sputtering method and has a thickness of 200 micrometers; siO (SiO) 2 The film is arranged above the ITO film by sputtering method, the thickness is generally 20 micrometers, and the solidified glue is coated on the ITO/SiO 2 The final curing of the cured glue above the film forms a ridge structure that determines the final structure of the grating. In the present specification, ITO is indium tin oxide, siO 2 Is silicon dioxide.
Further, the ridge structure formed by the ITO film is provided with a plurality of concentric circles, each concentric circle is provided with two small openings, the two small openings are arranged at 180 degrees, two concentric circles with adjacent radiuses are alternately provided with positive and negative poles, meanwhile, the small opening on any circle is arranged at 90 degrees with the small opening on the circle adjacent to the small opening, that is to say, the small openings on the two concentric circles with adjacent radiuses are arranged at 90 degrees, and finally, semicircular ridge structures which are arranged in a staggered mode are formed, and referring to fig. 2, fig. 2 is a schematic diagram of the grating structure based on the ITO film.
Further, a first high-transmittance film is disposed above the ITO film, the first high-transmittance film comprises an HfO layer and a ZnO layer, and the first high-transmittance film is a multi-layer structure formed by alternately forming the HfO layer and the ZnO layer, wherein HfO is hafnium oxide, and ZnO is zinc oxide.
Further, a second high-transmittance film is arranged below the transparent substrate, and comprises an HfO layer and SiO 2 The layer is composed of HfO layer and SiO 2 A multi-layered structure of alternating layers.
According to the grating based on the ITO film, the ITO film substrate with high conductivity and high doping is selected, so that the ZnO doping concentration of the ITO film is controlled to be 9% -11%, uniform voltage distribution correspondingly generates uniform refractive index, and diffraction noise of a light field can be reduced. Referring to fig. 3, fig. 3 is a schematic diagram of voltage distribution of an ITO film-based grating according to the present invention.
The invention further provides a grating preparation method based on the ITO film, which comprises the following steps:
s1: selecting a transparent substrate;
s2: sputtering an ITO film;
s3: sputtering SiO 2 The film is kept for 20 minutes in an oxygen environment at 200 ℃ after being subjected to high-temperature annealing treatment;
s4: coating a curing adhesive;
s5: manufacturing a negative mask, putting the negative mask into an optical system, and irradiating the curing adhesive by using an ultraviolet mercury lamp;
s6: washing the non-coagulated cured adhesive with alcohol;
s7: coating etching liquid, and standing for 10 to 15 minutes;
s8: washing with clear water and drying.
On a transparent substrate, preparing an ITO film with a thickness of about 200 micrometers by using a magnetron sputtering method, and then sputtering a SiO film with a thickness of 20 micrometers 2 And (3) a film layer. Sputtering formed ITO/SiO 2 And (3) carrying out high-temperature annealing treatment on the film, and keeping the film for 20 minutes in an oxygen environment with the temperature of about 200 ℃ to obtain an ITO film finished product. The transparent substrate can be quartz glass, transparent polyimide film or other optical glassAnd are not limiting.
And (3) coating the curing adhesive on the surface of the ITO film finished product, manufacturing a negative mask plate by utilizing a printing and developing mode according to a pre-designed pattern, then placing the mask plate into a microscopic imaging optical system, and irradiating the ultraviolet curing adhesive for 10 minutes by using an ultraviolet mercury lamp. At this time, the ultraviolet curable adhesive solidifies in the place where it can be irradiated by the ultraviolet lamp. The non-irradiated areas remain in an uncured state and can be washed away by an alcohol solution.
The ITO film surface cleaned by alcohol is coated with etching liquid which takes HCL acid as etching component, and the ITO film surface is stood for 10 to 15 minutes, and then is washed by clean water and dried. And (5) carrying out visual inspection by a microscope to obtain an ITO film grating qualified product. Wherein HCL is hydrogen chloride.
Further, step S8 further includes step S9: evaporating high-transmittance film. In order to improve the light transmittance of the ITO film grating, a plurality of dielectric films are evaporated on the upper and lower surfaces of the grating after etching, namely the upper surface of the ITO film and the lower surface of the transparent substrate to form a high-transmittance film. The first high-transmittance film on the ITO film surface comprises HfO layers and ZnO layers, a multilayer structure formed by alternately forming the HfO layers and the ZnO layers, and the second high-transmittance film on the lower surface of the transparent substrate comprises HfO layers and SiO layers 2 A layer composed of HfO layer and SiO layer 2 A multi-layered structure of alternating layers. When the transmittance is not high, only a single layer of antireflection film is vapor deposited, for example: a single layer MgO film is also acceptable, wherein MgO is magnesium oxide.
According to the grating based on the ITO film and the preparation method thereof, the grating of the ITO film is designed to be of a concentric circular ridge structure, meanwhile, the ITO film substrate with high conductivity and high doping is selected, the ZnO doping concentration range of the ITO film is controlled to be 9% -11%, uniform refractive index is correspondingly generated by uniform voltage distribution, and diffraction noise of a light field can be reduced.
The invention has been described with respect to the above-described embodiments, however, the above-described embodiments are merely examples of practicing the invention. It should be noted that the disclosed embodiments do not limit the scope of the invention. On the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.
Claims (8)
1. An ITO film-based grating, comprising:
a transparent substrate;
an ITO film having a thickness of 200 μm and disposed above the transparent substrate;
SiO 2 film of SiO 2 The film thickness was 20. Mu.m, and was disposed above the ITO film.
2. The grating of claim 1, wherein the ridge structure formed by the ITO film is a plurality of concentric circles, each concentric circle is provided with two small openings, the two small openings are arranged at 180 degrees, and the small openings on two concentric circles with adjacent radii are arranged at 90 degrees.
3. An ITO film-based grating according to claim 1, wherein a first high transmittance film is provided over the ITO film.
4. An ITO film-based grating according to claim 3, wherein the first high transmittance film comprises HfO layers and ZnO layers, which are a multilayer structure formed alternately of HfO layers and ZnO layers.
5. An ITO film-based grating according to claim 1, wherein a second high transmittance film is provided under the transparent substrate.
6. The ITO film-based grating of claim 5, wherein the second high-transmittance film comprises an HfO layer and SiO 2 The layer is composed of HfO layer and SiO 2 A multi-layered structure of alternating layers.
7. An ITO film-based grating preparation method comprises the following steps:
s1: selecting a transparent substrate;
s2: sputtering an ITO film;
s3: sputtering SiO 2 The film is kept for 20 minutes in an oxygen environment at 200 ℃ after being subjected to high-temperature annealing treatment;
s4: coating a curing adhesive;
s5: manufacturing a negative mask, putting the negative mask into an optical system, and irradiating the curing adhesive by using an ultraviolet mercury lamp;
s6: washing the non-coagulated cured adhesive with alcohol;
s7: coating etching liquid, and standing for 10 to 15 minutes;
s8: washing with clear water and drying.
8. The method for manufacturing an ITO film-based grating according to claim 7, wherein step S8 is followed by step S9: evaporating high-transmittance film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310392030.0A CN116430494A (en) | 2023-04-13 | 2023-04-13 | Grating based on ITO film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310392030.0A CN116430494A (en) | 2023-04-13 | 2023-04-13 | Grating based on ITO film and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116430494A true CN116430494A (en) | 2023-07-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310392030.0A Pending CN116430494A (en) | 2023-04-13 | 2023-04-13 | Grating based on ITO film and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116430494A (en) |
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2023
- 2023-04-13 CN CN202310392030.0A patent/CN116430494A/en active Pending
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