CN116429281A - Resonator based on array structure and temperature measurement method - Google Patents
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- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 19
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/32—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using change of resonant frequency of a crystal
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02244—Details of microelectro-mechanical resonators
- H03H9/02433—Means for compensation or elimination of undesired effects
- H03H9/02448—Means for compensation or elimination of undesired effects of temperature influence
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The application relates to the technical field of resonators and discloses a resonator based on an array structure and a temperature measuring method, wherein a vibration unit comprises at least two substructures and a fixed anchor point connected with a substrate, the vibration unit is formed with a reference surface, an in-plane electrode is positioned in the reference surface, and an out-of-plane electrode is positioned outside the reference surface; the in-plane electrode drives the substructure to vibrate at a first frequency, the out-of-plane electrode is located above and/or below the substructure, and the driving substructure vibrates at a second frequency, the substructure has a first frequency temperature coefficient at a first frequency of the in-plane mode, and the substructure has a second frequency temperature coefficient at a second frequency of the out-of-plane mode. According to the dual-mode resonator based on the array structure, the temperature of the resonator is characterized by combining the frequency temperature coefficient, and the temperature measurement accuracy of the resonator is improved.
Description
Technical Field
The application relates to the technical field of resonators, in particular to a resonator based on an array structure and a temperature measurement method.
Background
The clock provides frequency reference and time reference for the digital circuit, the resonator is a basic element of the clock, the resonator, the peripheral oscillating circuit, the amplifying circuit and the filtering circuit can form an oscillator, the oscillator can output a fixed frequency signal, and the frequency-temperature drift is a key performance index of the resonator; the frequency-temperature coefficient of the micromechanical resonator which is not subjected to temperature compensation is generally larger, the output frequency of the micromechanical resonator generally generates frequency drift exceeding 3500ppm within the range of the industrial-grade temperature of-40-85 ℃ and cannot meet the actual application requirements of industry, so that the micromechanical resonator needs to be subjected to temperature compensation when being used for clock application, and the micromechanical resonator is particularly important in accurate temperature measurement when being subjected to temperature compensation, and the more accurate the temperature measurement is, the more accurate the temperature compensation is, and the Q value of the resonator can be better improved.
Therefore, how to improve the temperature measurement accuracy of the resonator, so as to perform better temperature compensation, has become one of the technical problems to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present application provides a resonator based on an array structure and a temperature measurement method to improve the temperature measurement accuracy of the resonator.
To achieve the above object, according to a first aspect, the following technical solution is adopted:
an array structure-based resonator, comprising:
a substrate, a vibrating unit, an in-plane electrode, and an out-of-plane electrode;
the vibration unit is arranged on the substrate and comprises at least two substructures for vibration and a fixed anchor point connected with the substrate, the vibration unit is provided with a reference surface, the in-plane electrode is positioned in the reference surface, and the out-of-plane electrode is positioned outside the reference surface;
the in-plane electrode is held in a gap with the substructure and drives the substructure to have an in-plane mode that vibrates at a first frequency in the plane of the reference plane, the out-of-plane electrode is located above and/or below the substructure, and drives the substructure to have an out-of-plane mode that vibrates at a second frequency out of the plane of the reference plane; wherein the first frequency has a first frequency temperature coefficient and the second frequency has a second frequency temperature coefficient.
The application is further configured to: the substructure comprises a vibrator for vibrating and a coupling beam which is respectively connected with the vibrator and the fixed anchor point, and the coupling beam is fixed on the substrate through the fixed anchor point.
The application is further configured to: when the number of the substructures is two, the two substructures are driven by the out-of-plane electrode and the in-plane electrode respectively and have the out-of-plane mode and the in-plane mode respectively.
The application is further configured to: the phase of the out-of-plane electrode positioned above and below the same substructure is opposite, and the phase of the out-of-plane electrode positioned in the same direction is the same or opposite.
The application is further configured to: the vibrator comprises a mass block or a mass ring, and the in-plane electrode and the out-of-plane electrode comprise a driving electrode and a sensing electrode.
The application is further configured to: in the in-plane mode, the first frequency temperature coefficient increases with increasing ion doping concentration of the vibrator; in the out-of-plane mode, the second frequency temperature coefficient decreases as the ion doping concentration of the vibrator increases.
The application is further configured to: the arrangement mode of the substructure relative to the fixed anchor points can be a parallel array, a circumferential array or a two-dimensional array.
According to a second aspect, the technical scheme adopted is as follows:
a resonator temperature measurement method based on an array structure, comprising:
acquiring a first frequency of at least one substructure driven by an in-plane electrode and vibrating in an in-plane mode, the first frequency having a first frequency temperature coefficient;
acquiring a second frequency of at least one of the substructures driven by the out-of-plane electrode and vibrating in the out-of-plane mode, the second frequency having a second frequency temperature coefficient;
and inputting the first frequency and the second frequency into a frequency synthesizer for processing, and representing the target temperature by combining the relation between the output value of the frequency synthesizer and the temperature.
The application is further configured to: the process of inputting the first frequency and the second frequency into a frequency synthesizer specifically includes: the frequency synthesizer compares the first frequency with the second frequency to obtain a frequency ratio as the output value.
The application is further configured to: the process of inputting the first frequency and the second frequency into a frequency synthesizer specifically includes: the frequency synthesizer differentiates the first frequency and the second frequency to obtain a frequency difference as the output value.
In summary, compared with the prior art, the application discloses a resonator based on an array structure and a temperature measurement method, the resonator based on the array structure comprises a substrate, a vibrating unit, an in-plane electrode and an out-of-plane electrode, the in-plane electrode is located in a reference plane, the out-of-plane electrode is located outside the reference plane, an in-plane electrode driving substructure has an in-plane mode vibrating at a first frequency in the plane of the reference plane, the out-of-plane electrode driving substructure has an out-of-plane mode vibrating at a second frequency in the plane of the reference plane, a first frequency temperature coefficient of the substructure is combined with the first frequency temperature coefficient of the substructure, and a second frequency temperature coefficient of the substructure is combined with the second frequency temperature coefficient of the substructure, so that the temperature of the resonator is characterized, and the frequency temperature coefficient is changed according to the change of the ion doping concentration, so that the sensitivity of the temperature is improved, and meanwhile, the temperature measurement accuracy of the resonator based on the array structure and having double modes is improved by utilizing a frequency synthesizer to process and a frequency difference or a frequency ratio to reflect a target temperature.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following description will briefly explain the drawings needed in the description of the embodiments, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural view of a first resonator based on an array structure of the present embodiment;
fig. 2 is a schematic structural view of a second resonator based on an array structure according to the present embodiment;
fig. 3 is a schematic structural view of a third resonator based on an array structure of the present embodiment;
fig. 4 is a schematic structural view of a first vibration unit of the present embodiment;
fig. 5 is a schematic structural view of a second vibration unit of the present embodiment;
FIG. 6a is a graph showing the frequency and temperature variation of the first seed structure according to the present embodiment;
FIG. 6b is a graph showing the frequency and temperature variation of the second seed structure according to the present embodiment;
FIG. 7 is a graph showing the relationship between the first frequency change amount and the temperature in the present embodiment;
FIG. 8 is a graph showing the relationship between the second frequency variation amount and the temperature in the present embodiment;
fig. 9 is a graph showing a relationship between the third frequency variation amount and the temperature in the present embodiment;
FIG. 10 is a graph showing a fourth frequency change amount versus temperature for the present embodiment;
fig. 11 is a flowchart of a resonator temperature measurement method based on the array structure of the present embodiment.
Reference numerals: 1. a substrate; 2. a vibration unit; 21. a substructure; 22. fixing an anchor point; 211. a vibrator; 212. a coupling beam; 3. an in-plane electrode; 4. an out-of-plane electrode; 5. a reference surface.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples are not representative of all implementations consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as detailed in the accompanying claims.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the element defined by the phrase "comprising one … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element, and furthermore, elements having the same name in different embodiments of the present application may have the same meaning or may have different meanings, a particular meaning of which is to be determined by its interpretation in this particular embodiment or by further combining the context of this particular embodiment.
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application.
In the following description, suffixes such as "module", "component", or "unit" for representing elements are used only for facilitating the description of the present application, and are not of specific significance per se. Thus, "module," "component," or "unit" may be used in combination.
In the description of the present application, it should be noted that the positional or positional relationship indicated by the terms such as "upper", "lower", "left", "right", "inner", "outer", etc. are based on the positional or positional relationship shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
The technical solutions shown in the present application will be described in detail by specific examples. The following description of the embodiments is not intended to limit the priority of the embodiments.
Referring to fig. 1-3, the present embodiment discloses an array structure-based resonator, which includes a substrate 1, a vibration unit 2, an in-plane electrode 3, and an out-of-plane electrode 4; wherein the vibration unit 2 is disposed on the substrate 1, and the vibration unit 2 includes at least two substructures 21 for vibration and a fixed anchor point 22 connected with the substrate 1, that is, the fixed anchor point 22 is used as a connection medium between the substructures 21 and the substrate 1, so as to endow the substructures 21 with an in-plane mode of translational vibration, bending vibration or shrinkage vibration in a plane, and an out-of-plane mode of translational, up-down bending vibration or torsional vibration in space.
In the specific implementation process, the arrangement manner of the sub-structures 21 constituting the vibration unit 2 is not limited, that is, the sub-structures 21 may be formed in a rectangular array structure or a circumferential array structure or a single array structure, etc., based on the fixed anchor points 22.
Further, referring to fig. 2, the vibration unit 2 is formed with a reference surface 5, where the reference surface 5 may be a central plane of the substructure 21 and the anchor point 22, and defined by a parallel line kept at a distance from the substrate 1 as a reference, and the top surface or the bottom surface of the substructure 21 and the anchor point 22 are also located on the same plane, so as to better highlight and define the reference surface 5.
In this embodiment, the in-plane electrode 3 is located in the reference plane 5, the out-of-plane electrode 4 is located outside the reference plane 5, i.e. the out-of-plane electrode 4 is located above or below the reference plane 5 with a distance, the in-plane electrode 3 is located in the plane of the reference plane 5, wherein the in-plane electrode 3 is kept in a gap with the sub-structure 21, and the driving sub-structure 21 vibrates in the plane of the reference plane 5 at a first frequency, i.e. the in-plane mode of the sub-structure 21, and the out-of-plane electrode 4 is located above and/or below the sub-structure 21, and the out-of-plane electrode 4 drives the sub-structure 21 to vibrate in the out-of-plane of the reference plane 5 at a second frequency, i.e. the out-of-plane mode of the sub-structure 21.
It should be noted that, based on the reference surface 5, under the driving of the in-plane electrode 3 and the out-of-plane electrode 4, the substructure 21 obviously has two vibration modes, i.e. an in-plane mode and an out-of-plane mode, and in the actual operation of the resonator, any mode may be selected to vibrate, or the two modes respectively act on the substructure 21, or the two modes simultaneously act on the substructure 21, so as to conveniently exert the effect of reducing the impedance of the resonator.
In this embodiment, when the substructure 21 is in a stable vibration state, a first frequency of an in-plane mode thereof has a first frequency temperature coefficient, and a second frequency of an out-of-plane mode thereof has a second frequency temperature coefficient, that is, the first frequency and the second frequency when the substructure 21 vibrates can be input into a frequency synthesizer, the frequency synthesizer is used for carrying out differential or proportional relation on the first frequency and the second frequency, and the obtained frequency difference or the relation between the frequency ratio and the temperature is used for characterizing the temperature of the resonator, so as to improve the temperature measurement precision of the resonator with double modes based on the array structure, and facilitate the temperature compensation of the resonator.
It will be appreciated that the frequency temperature coefficient is TCF (Temperature Coefficientof Frequency) coefficient, which is a linear fit coefficient of the frequency variation over the range of resonator temperature, whereby resonator temperature can be characterized by the frequency difference or frequency ratio of the in-plane and out-of-plane modes and the frequency temperature coefficient.
In this embodiment, the substructure 21 includes a vibrator 211 for vibration and a coupling beam 212 connecting the vibrator 211 and the fixed anchor 22, respectively, the coupling beam 212 being fixed to the substrate 1 through the fixed anchor 22 so as to provide a vibration basis for the vibrator 211 through the fixed anchor 22.
In some embodiments, vibrator 211 may comprise a mass or a mass ring to facilitate the spatial arrangement of substructures 21, wherein substructures 21 may be arranged in a parallel array, a circumferential array, or a two-dimensional array with respect to fixed anchor points 22.
It should be noted that, the in-plane electrode 3 and the out-of-plane electrode 4 each include a driving electrode and a sensing electrode, and the driving electrode and the sensing electrode are also provided with corresponding driving circuits and sensing circuits so that the in-plane electrode 3 and the out-of-plane electrode 4 function.
When the number of the sub-structures 21 is two, the resonator may be a single array structure as shown in fig. 1, wherein the two sub-structures 21 are driven by the out-of-plane electrode 4 and the in-plane electrode 3, respectively, i.e. the resonator has an out-of-plane mode and an in-plane mode, respectively.
In the implementation process, referring to fig. 3, the number of the sub-structures 21 is 12, and the sub-structures 21 are arranged in a rectangular ring array around the fixed anchor points 22, wherein the out-of-plane electrodes 4 are distributed above the 8 sub-structures 21 on the outer layer of the vibration unit 2, the in-plane electrodes 3 are distributed on the sides of the 4 sub-structures 21 on the inner layer of the vibration unit 2, and when the polarities of the out-of-plane electrodes 4 are identical, if the out-of-plane electrodes 4 located above the reference plane 5 are both positive or both negative, then referring to fig. 4, the 8 sub-structures 21 driven by the out-of-plane electrodes 4 synchronously make symmetrical out-of-plane mode vibration outside the plane of the reference plane 5, and meanwhile, the 4 sub-structures 21 driven by the in-plane electrodes 3 make in-plane mode vibration inside the plane of the reference plane 5.
When the polarities of the out-of-plane electrodes 4 located at the same direction of the reference plane 5 are inconsistent, for example, the out-of-plane electrodes 4 located above the reference plane 5 include both positive electrodes and negative electrodes, referring to fig. 5, the left and right side out-of-plane electrodes 4 of the vibration unit 2 are positive electrodes, the upper and lower side out-of-plane electrodes 4 of the vibration unit 2 are negative electrodes, and the 8 sub-structures 21 driven by the out-of-plane electrodes 4 vibrate in opposite directions on the out-of-plane of the reference plane 5 according to the polarities of the out-of-plane electrodes 4, that is, in-plane mode vibration is performed on the surface of the reference plane 5 by the 4 sub-structures 21 driven by the in-plane electrodes 3.
It should be noted that the out-of-plane electrode 4 is located above or below the reference plane 5 and corresponds to the substructure 21, and the out-of-plane electrode 4 may be symmetrical to both sides of the substructure 21, i.e. the out-of-plane electrodes 4 located above and below the same substructure 21 are in opposite phase, if the out-of-plane electrode 4 located above the substructure 21 is positive, the out-of-plane electrode 4 located below the substructure 21 is negative, and vice versa.
Further, the polarities of the out-of-plane electrodes 4 located on the same side of the sub-structure 21 may be the same or different, i.e. the phases of the out-of-plane electrodes 4 located above the sub-structure 21 may be the same or opposite, or the phases of the out-of-plane electrodes 4 located below the sub-structure 21 may be the same or opposite, i.e. the phases of the out-of-plane electrodes 4 located in the same orientation, so that the resonator may have symmetrical out-of-plane modal vibrations or antisymmetric out-of-plane modal vibrations.
The resonator based on the array structure of the present embodiment includes a substrate 1, a vibration unit 2, an in-plane electrode 3 and an out-of-plane electrode 4, where the in-plane electrode 3 is located in a reference plane 5, and the out-of-plane electrode 4 is located outside the reference plane 5, and the in-plane electrode 3 driving substructure 21 has an in-plane mode that vibrates at a first frequency in the plane of the reference plane 5, and the out-of-plane electrode 4 driving substructure 21 has an out-of-plane mode that vibrates at a second frequency in the plane of the reference plane 5, and combines a first frequency temperature coefficient of the substructure 21 at the first frequency and a second frequency temperature coefficient of the substructure 21 at the second frequency, so as to characterize the temperature of the resonator, that is, there are two different modes in one resonator, and due to the difference of the two modes, the frequency difference or the frequency-temperature relationship corresponding to the frequency temperature coefficient, so as to achieve the purposes of accurate temperature measurement and temperature compensation.
In order to solve the technical problems related to the background technology, referring to fig. 11 in combination with the resonator structure based on the array structure, the embodiment discloses a resonator temperature measurement method based on the array structure, which includes:
s101, a first frequency of at least one substructure 21 driven by the in-plane electrodes 3 and vibrating in the in-plane mode is acquired, the first frequency having a first frequency temperature coefficient.
S102, obtaining a second frequency of at least one substructure 21 driven by the out-of-plane electrode 4 and vibrating in the out-of-plane mode, the second frequency having a second frequency temperature coefficient.
S103, inputting the first frequency and the second frequency into a frequency synthesizer for processing, and representing the target temperature by combining the relation between the output value of the frequency synthesizer and the temperature.
In this embodiment, the process of inputting the first frequency and the second frequency into the frequency synthesizer specifically includes: the frequency synthesizer compares the first frequency with the second frequency to obtain a frequency ratio as an output value.
The target temperature of the resonator is represented by the frequency ratio of the in-plane mode to the out-of-plane mode and the corresponding relation between the frequency ratio and the temperature, and the temperature compensation can be performed on the resonator based on the target temperature.
In some embodiments, the first frequency and the second frequency are input to a frequency synthesizer for processing, specifically including: the frequency synthesizer differentiates the first frequency and the second frequency to obtain a frequency difference as an output value.
The target temperature of the resonator is represented by the frequency difference between the in-plane mode and the out-of-plane mode and the corresponding relation between the frequency difference and the temperature, and the temperature compensation can be performed on the resonator based on the target temperature.
In some embodiments, the temperature coefficient of the frequency can be further changed by adjusting the ion doping concentration, so as to improve the temperature measurement accuracy of the resonator, referring to fig. 6a and 6b, in the case that the vibrator 211 is doped with low concentration ions, as shown in fig. 6a, the temperature coefficient curve of the frequency of the in-plane mode and the out-of-plane mode is relatively flat, and in the case that the vibrator 211 is doped with high concentration ions, as shown in fig. 6b, the temperature coefficient curve of the frequency of the out-of-plane mode is relatively flat, and the temperature coefficient curve of the frequency of the in-plane mode has turning points, that is, the temperature coefficient of the frequency can be changed by adjusting the ion doping concentration.
In a specific implementation, before the first frequency of the substructure 21 driven by the in-plane electrode 3 and vibrating in the in-plane mode is obtained, or before the second frequency of the substructure 21 driven by the out-of-plane electrode 4 and vibrating in the out-of-plane mode is obtained, the ion doping of the vibrator 211 may be adjusted, for example, the vibrator 211 is doped with phosphorus ions to an ion doping concentration of 7.5×e 19 cm -2 And/or 6.6Xe 19 cm -2 。
As an example, referring to fig. 7 to 9, fig. 7 is a graph showing a relationship between the frequency variation amount of the in-plane mode and the temperature by changing the ion doping concentration of vibrator 211 at a set frequency of 60MHz, wherein the horizontal axis is temperature degrees celsius and the vertical axis is frequency variation amount Δf (ppm); taking phosphorus ion doping as an example, when the ion doping concentrations of the vibrators 211 are 6.6×e, respectively 19 cm -2 And 7.5 Xe 19 cm -2 In the in-plane mode, the first-order coefficients of the first frequency temperature coefficient of the vibrator 211 are-3.7 ppm/°c and-2.9 ppm/°c, respectively, that is, in the in-plane mode, the first frequency temperature coefficient increases with the increase of the ion doping concentration of the vibrator 211, so that by increasing the doping concentration of the vibrator 211, the frequency temperature coefficient of the vibrator 211 in the in-plane mode can be increased, and the sensitivity of temperature characterization by using the frequency temperature coefficient can be improved.
Referring to FIG. 8, FIG. 8 is a graph showing a relationship between the frequency variation of the out-of-plane mode of symmetry and the temperature of vibrator 211 at a set frequency of 0.41MHz, in which the horizontal axis represents temperature C and the vertical axis represents the frequency variation Δf (ppm), when the ion doping concentrations of vibrator 211 are 6.6Xe, respectively 19 cm -2 And 7.5 Xe 19 cm -2 In the case where the first-order coefficients in the second frequency temperature coefficient of the vibrator 211 are-15.0721 ppm/DEG C and-15.317 ppm/DEG C, respectively, referring to FIG. 9, FIG. 9 is a graph showing the relationship between the frequency variation of the anti-symmetric out-of-plane mode and the temperature of the vibrator 211 at a set frequency of 0.42MHz, in which the horizontal axis represents the temperature DEG C and the vertical axis represents the frequency variation Δf (ppm), and the ion doping concentrations of the vibrator 211 are 6.6Xe, respectively 19 cm -2 And 7.5 Xe 19 cm -2 In the case, the first-order coefficients of the second frequency temperature coefficient of the vibrator 211 are-18.971 ppm/°c and-19.588 ppm/°c, respectively, that is, in the out-of-plane mode, the second frequency temperature coefficient decreases with increasing ion doping concentration of the vibrator 211, so that the change of the frequency temperature coefficient can be adjusted by using the ion doping concentrations of the vibrator 211 in the in-plane mode and the out-of-plane mode, respectively, and the accuracy of resonator temperature detection can be improved.
Further, referring to fig. 10, the vibrator 211 has an ion doping concentration of 7.5×e 19 cm -2 Under the condition, the frequency change amount and the temperature of the in-plane mode and the out-of-plane mode of the vibrator 211 are compared, the horizontal axis is the temperature ℃, the vertical axis is the frequency change amount Δf (ppm), and it can be obviously seen that the frequency temperature coefficient of the in-plane mode is larger than that of the out-of-plane mode, namely, the sensitivity of the resonator temperature measurement is improved by improving the doping concentration.
In some embodiments, the vibrator 211 has a fixed value of ion doping concentration, and based on this, the frequency temperature coefficient is not affected by the ion doping concentration, and the resonator temperature is characterized by a first frequency and a first frequency temperature coefficient of the in-plane mode of the substructure 21, and a second frequency temperature coefficient of the out-of-plane mode of the substructure 21.
The foregoing has outlined rather broadly the more detailed description of the present application, wherein specific examples have been provided to illustrate the principles and embodiments of the present application, the description of the examples being provided solely to assist in the understanding of the core concepts of the present application; meanwhile, those skilled in the art will have variations in the specific embodiments and application scope in light of the ideas of the present application, and the present description should not be construed as limiting the present application in view of the above.
Claims (10)
1. An array structure-based resonator, comprising:
a substrate, a vibrating unit, an in-plane electrode, and an out-of-plane electrode;
the vibration unit is arranged on the substrate and comprises at least two substructures for vibration and a fixed anchor point connected with the substrate, the vibration unit is provided with a reference surface, the in-plane electrode is positioned in the reference surface, and the out-of-plane electrode is positioned outside the reference surface;
the in-plane electrode is kept with a gap from the substructure, and drives the substructure to have an in-plane mode of vibration at a first frequency in the plane of the reference plane; the out-of-plane electrode is positioned above and/or below the substructure and drives the substructure to have an out-of-plane mode of vibration at a second frequency out-of-plane of the reference plane; wherein the first frequency has a first frequency temperature coefficient and the second frequency has a second frequency temperature coefficient.
2. The resonator based on an array structure according to claim 1, characterized in that the substructure comprises a vibrator for vibration and coupling beams connecting the vibrator and the fixed anchor point, respectively.
3. An array structure based resonator as claimed in claim 2, wherein when the number of substructures is two, both substructures are driven by the out-of-plane electrode and the in-plane electrode, respectively, and have the out-of-plane mode and the in-plane mode, respectively.
4. An array structure based resonator as claimed in claim 1, wherein the phase of the out-of-plane electrodes located above and below the same sub-structure are opposite, and the phase of the out-of-plane electrodes located in the same orientation are the same or opposite.
5. An array structure based resonator as claimed in claim 2, wherein the vibrator comprises a mass or a mass ring, and the in-plane electrode and the out-of-plane electrode each comprise a drive electrode and a sense electrode.
6. The array-structure-based resonator of claim 2, wherein in the in-plane mode, the first frequency temperature coefficient increases as an ion doping concentration of the vibrator increases; in the out-of-plane mode, the second frequency temperature coefficient decreases as the ion doping concentration of the vibrator increases.
7. An array-based resonator according to any of claims 1-6, characterized in that the substructures are arranged in a parallel array, a circumferential array or a two-dimensional array with respect to the fixed anchor points.
8. An array structure-based resonator temperature measurement method applied to the array structure-based resonator according to any one of claims 1 to 7, comprising:
acquiring a first frequency of at least one substructure driven by an in-plane electrode and vibrating in an in-plane mode, the first frequency having a first frequency temperature coefficient;
acquiring a second frequency of at least one of the substructures driven by the out-of-plane electrode and vibrating in the out-of-plane mode, the second frequency having a second frequency temperature coefficient;
and inputting the first frequency and the second frequency into a frequency synthesizer for processing, and representing the target temperature by combining the relation between the output value of the frequency synthesizer and the temperature.
9. The method for measuring temperature of a resonator based on an array structure according to claim 8, wherein said inputting the first frequency and the second frequency into a frequency synthesizer comprises: the frequency synthesizer compares the first frequency with the second frequency to obtain a frequency ratio as the output value.
10. The method for measuring temperature of a resonator based on an array structure according to claim 8, wherein said inputting the first frequency and the second frequency into a frequency synthesizer comprises:
the frequency synthesizer differentiates the first frequency and the second frequency to obtain a frequency difference as the output value.
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