CN116419659A - Laser annealing device and method for superconducting quantum chip - Google Patents
Laser annealing device and method for superconducting quantum chip Download PDFInfo
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Abstract
The invention discloses a laser annealing device and a method for a superconducting quantum chip, wherein the laser annealing device for the superconducting quantum chip comprises a bearing device, an image acquisition device, a laser light source, a spatial light modulator and an objective lens, and almost any-shaped light spots can be generated on a micro area by utilizing the spatial light modulator in the laser annealing device, so that one Josephson junction can be annealed singly or the illumination field or illumination intensity distribution around each junction area can be controlled randomly, the accurate regulation and control of bit properties can be realized, and the problems of the existing annular laser annealing can be effectively solved.
Description
Technical Field
The invention relates to the field of photoetching equipment, in particular to a laser annealing device and method for a superconducting quantum chip.
Background
In recent years, the superconducting resonance circuit has been developed in a long-term way to realize quantum computation, and 53-bit superconducting quantum chips have been released by google corporation in 2019. The existing production and preparation process cannot achieve stable, controllable and consistent parameters of hundreds of superconducting quantum bits in a single superconducting quantum chip, and the yield of chip preparation is improved, besides changing the manufacturing process, the quantum bits can be locally modified, so that the yield is improved.
The quantum bit local modification technology is to directionally modify the frequency parameters of the quantum bits by carrying out local laser annealing on single quantum bits, so as to improve the yield of chips. In the prior art, a ring laser annealing method is proposed, and the main means is to control the intensity and irradiation time of laser and control the shape of the laser, so as to convert the laser into a ring-shaped light spot, thereby avoiding the junction from being directly exposed to the laser. In practice, the applicant has found that an important unit constituting a qubit in a superconducting quantum chip is SQUID (superconducting quantum interferometer), which is a structure consisting of two josephson junctions, whereas ring heating makes it difficult to control the annealing parameters of the individual josephson junctions. Although the ring laser annealing does not directly irradiate the junction region (josephson junction), the shape of the ring laser can only be adjusted in size integrally, and fine adjustment of the shape and size cannot be achieved. Therefore, in practical use, when the size of the ring laser is set to be small, the structure of the josephson junction is damaged although the annealing treatment effect of the junction region is good, whereas when the size of the ring laser is set to be large, the structure of the josephson junction is not damaged, but the annealing treatment effect of the junction region is poor at this time.
Therefore, how to solve the problems of the ring laser annealing is a technical problem to be solved in the art.
It should be noted that the information disclosed in the background section of the present application is only for enhancement of understanding of the general background of the present application and should not be taken as an admission or any form of suggestion that this information forms the prior art already known to a person skilled in the art.
Disclosure of Invention
The invention aims to provide a laser annealing device and a method for a superconducting quantum chip, which are used for solving the problems of annular laser annealing in the prior art.
In order to solve the above technical problems, the present invention provides a laser annealing device for a superconducting quantum chip, comprising:
the bearing device is used for bearing a superconducting quantum chip;
the image acquisition device is used for acquiring the physical topological structure of the superconducting quantum chip;
a laser light source for generating and outputting laser light;
a spatial light modulator communicatively connected to the image acquisition device for receiving the laser light from the laser light source, adjusting the received laser light based on the physical topology of the superconducting quantum chip so that the laser light forms a first exposure region on the superconducting quantum chip focused on a josephson junction of the superconducting quantum chip and a second exposure region surrounding the josephson junction;
and the objective lens is used for transmitting the laser output from the spatial light modulator to the superconducting quantum chip for annealing treatment.
Optionally, the image acquisition device is further used for acquiring the distribution condition of the exposure area currently irradiated on the superconducting quantum chip;
the spatial light modulator is also used for adjusting the received laser based on the distribution condition of the exposure area on the superconducting quantum chip.
Optionally, the laser annealing device further comprises a control device;
the control device is in communication connection with the image acquisition device and the spatial light modulator, and is used for sending a control instruction to the spatial light modulator based on the physical topological structure so as to enable the spatial light modulator to adjust the received laser.
Optionally, the control device is further configured to determine whether a josephson junction of the superconducting quantum chip is located in the first exposure area according to the distribution situation of the exposure area on the superconducting quantum chip, and send a control instruction to enable the spatial light modulator to adjust the output laser to adjust the position of the first exposure area when the determination result is negative.
Optionally, the light intensity of the first exposure area is smaller than the light intensity of the second exposure area.
Optionally, the light intensity of the first exposure region gradually decreases from the periphery to the central position, and the josephson junction of the superconducting quantum chip is disposed at the central position of the first exposure region.
Optionally, the light intensity of the first exposure area is 0.
Optionally, the spatial light modulator is provided with a plurality of reflectors, the reflectors are distributed in two dimensions, and each reflector is independently controlled to regulate and control the received laser respectively.
Optionally, the laser annealing device further includes:
the first light splitting device is connected with the output end of the laser light source and is used for splitting part of laser to the light intensity detection device and transmitting the rest of laser to the light intensity control device;
a light intensity detection device for detecting the light intensity of the laser;
and the light intensity control device is connected with the output end of the first light splitting device and the light intensity detection device and is used for adjusting the light intensity of the output laser based on the detection result of the light intensity detection device.
Optionally, the laser annealing device further includes:
the beam expanding device is connected with the output end of the light intensity control device and is used for expanding the beam diameter of the input laser;
the light equalizing device is connected with the output end of the beam expanding device and is used for converting the laser output by the beam expanding device into uniformly distributed light beams;
and the collimating device is connected with the output end of the light homogenizing device and is used for outputting the laser output by the light homogenizing device to the spatial light modulator.
Optionally, the laser annealing device further includes:
a first light source for providing a light source for the image acquisition device;
the second light splitting device is arranged between the spatial light modulator and the objective lens;
and the third light splitting device is connected with the first light source, the second light splitting device and the image acquisition device, and is matched with the second light splitting device to output the light source of the first light source to the superconducting quantum chip and output the light reflected by the superconducting quantum chip to the image acquisition device.
Based on the same inventive concept, the invention also provides a laser annealing method for the superconducting quantum chip, which comprises the following steps:
providing a superconducting quantum chip;
the image acquisition device acquires the physical topological structure of the superconducting quantum chip at present;
the laser light source generates and outputs laser;
a spatial light modulator receives the laser light from the laser light source, adjusts the received laser light based on the physical topology of the superconducting quantum chip so that the laser light forms a first exposure region on the superconducting quantum chip focused on a Josephson junction of the superconducting quantum chip and a second exposure region surrounding the Josephson junction;
and the objective lens transmits the laser output from the spatial light modulator to the superconducting quantum chip for annealing treatment.
Optionally, the method further comprises:
the image acquisition device acquires the distribution condition of an exposure area currently irradiated on the superconducting quantum chip;
the spatial light modulator is used for adjusting the received laser based on the distribution condition of the exposure area on the superconducting quantum chip.
Optionally, the method further comprises:
the control device is used for sending a control instruction to the spatial light modulator based on the physical topological structure so as to enable the spatial light modulator to adjust the received laser.
Optionally, the method further comprises:
and the control device judges whether the Josephson junction of the superconducting quantum chip is in the first exposure area according to the distribution condition of the exposure area on the superconducting quantum chip, and when the judgment result is negative, the control device sends a control instruction to enable the spatial light modulator to adjust the output laser so as to adjust the position of the first exposure area.
Optionally, the light intensity of the first exposure region gradually decreases from the periphery to the central position, and the josephson junction of the superconducting quantum chip is disposed at the central position of the first exposure region.
Optionally, the light intensity of the first exposure area is 0.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a laser annealing device for a superconducting quantum chip, which comprises a bearing device, an image acquisition device, a laser light source, a spatial light modulator and an objective lens, wherein the bearing device is used for bearing the superconducting quantum chip; the image acquisition device is used for acquiring the physical topological structure of the superconducting quantum chip at present; the laser light source is used for generating and outputting laser; the spatial light modulator receives the laser light from the laser light source and is in communication connection with the image acquisition device for adjusting the received laser light based on the physical topology of the superconducting quantum chip such that the laser light forms a first exposed region on the superconducting quantum chip focused on a Josephson junction of the superconducting quantum chip and a second exposed region surrounding the Josephson junction. The spatial light modulator in the laser annealing device can generate light spots with almost any shape on a micro area, so that one Josephson junction can be annealed singly or the illumination field or illumination intensity distribution around each junction area can be controlled randomly, thereby realizing the accurate regulation and control of bit properties and effectively solving the problems existing in the existing annular laser annealing.
The invention also provides a laser annealing method for the superconducting quantum chip, which belongs to the same conception as the laser annealing method for the superconducting quantum chip, and therefore has the same beneficial effects.
Drawings
Fig. 1 is a schematic structural diagram of a laser annealing device for a superconducting quantum chip according to an embodiment of the present invention;
FIG. 2 is a schematic view of an exposure area according to the present embodiment;
FIG. 3 is a schematic view of another exposure area according to the present embodiment;
FIG. 4 is a schematic view of another exposure area according to the present embodiment;
FIG. 5 is a flow chart of a laser annealing method for superconducting quantum chips according to another embodiment of the present invention;
fig. 6 is a schematic diagram of an exemplary structure of a laser annealing device for a superconducting quantum chip according to an embodiment of the present invention;
the device comprises a first exposure area, a second exposure area, a 300-Josephson junction, a 400-wire, a 10-laser light source, a 11-first light splitting device, a 12-light intensity detection device, a 13-beam expanding device, a 14-light homogenizing device, a 15-collimating device, a 16-focusing lens, a 17-prism, a 18-spatial light modulator, a 19-light trap, a 20-first light source, a 21-illumination light source lens group, a 22-second light splitting device, a 23-third light splitting device, a 24-tube lens, a 25-image acquisition device, a 26-objective lens and a 27-bearing device.
Detailed Description
Specific embodiments of the present invention will be described in more detail below with reference to the drawings. Advantages and features of the invention will become more apparent from the following description and claims. It should be noted that the drawings are in a very simplified form and are all to a non-precise scale, merely for convenience and clarity in aiding in the description of embodiments of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", etc., are based on the directions or positional relationships shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
When a heat source is applied to josephson junction 300, the first frequency of the qubit may be increased or decreased to the second frequency when the superconducting quantum chip is annealed. For example, the resistance across the josephson junction 300 increases as the laser beam is directed towards the josephson junction 300. The increase in resistance of the josephson junction 300 results in a reduction in the frequency of the qubits associated with the josephson junction 300, since the resistance of the josephson junction 300 has an inverse relationship to the frequency of the qubits. Of course, the qubit may also include a capacitor and josephson junction 300, and parameters of the qubit may be similarly affected by the annealing process. It is understood that the qubits may be any combination or number of structures including the josephson junction 300 and any other components (e.g. capacitors) used to fabricate the josephson junction 300, for which the following technical solutions presented herein are applicable.
Referring to fig. 1 and 6, a laser annealing apparatus for a superconducting quantum chip includes a carrier device 27, an image acquisition device 25, a laser light source 10, a spatial light modulator 18, and an objective lens 26. The carrying device 27 is used for carrying a superconducting quantum chip, the image acquisition device 25 is used for acquiring the physical topological structure of the superconducting quantum chip, and the laser light source 10 is used for generating and outputting laser light. The spatial light modulator 18 is communicatively connected to the image acquisition device 25 for receiving laser light from the laser light source 10, and for adjusting the received laser light based on the physical topology of the superconducting quantum chip such that the laser light forms on the superconducting quantum chip a first exposure region 100 focused on the josephson junction 300 of the superconducting quantum chip and a second exposure region 200 surrounding the josephson junction 300. The objective lens 26 is used to transmit the laser light output from the spatial light modulator 18 to the superconducting quantum chip for annealing treatment.
The difference from the prior art is that the laser annealing device for superconducting quantum chips provided in this embodiment includes a carrying device 27, an image acquisition device 25, a laser light source 10, a spatial light modulator 18, and an objective lens 26, where the carrying device 27 is used to carry a superconducting quantum chip; the image acquisition device 25 is used for acquiring the physical topological structure of the superconducting quantum chip at present; the laser light source 10 is used for generating and outputting laser light; the spatial light modulator 18 receives laser light from the laser light source 10 and is communicatively connected to the image acquisition device 25 for adjusting the received laser light based on the physical topology of the superconducting quantum chip such that the laser light forms on the superconducting quantum chip a first exposure region 100 focused on the josephson junction 300 of the superconducting quantum chip and a second exposure region 200 surrounding the josephson junction 300. The spatial light modulator 18 in the laser annealing device can generate light spots with almost any shape on a micro area, so that one Josephson junction 300 can be annealed singly or the illumination field or illumination intensity distribution around each junction area can be controlled randomly, thereby realizing the accurate regulation and control of bit properties and effectively solving the problems existing in the existing ring laser annealing.
Specifically, the spatial light modulator 18 has a plurality of mirrors, where the mirrors are disposed in a two-dimensional distribution, and each of the mirrors is independently controlled to regulate and control the received laser light respectively. The spatial light modulator 18 has continuous adjustment capability, the plurality of mirrors are spliced together to form a two-dimensional spatial array, each mirror is independently controlled, each mirror outputs a pixel point, a plurality of pixels jointly output by the plurality of mirrors form the first exposure area 100 and the second exposure area 200, and the light intensity of each pixel point can be adjusted by the corresponding mirror. Each reflector is provided with an adjusting coefficient, wherein the size of the adjusting coefficient is in direct proportion to the light intensity of the pixel point output by each reflector, fine adjustment of the whole exposure area can be realized by adjusting the adjusting coefficient of each reflector, and a needed light field can be generated. Those skilled in the art will appreciate that the shape of the first exposure region 100 and the second exposure region 200 may be annular, circular, or square, and that many other shapes may be implemented, and may be specifically selected according to the specific structure of the superconducting quantum chip, which is not limited herein.
In some embodiments, the light intensity of the first exposure region 100 may be greater than the light intensity of the second exposure region 200, and the extent of the first exposure region 100 may be set by the spatial light modulator 18 to cover only the josephson junction 300, i.e. to anneal only the junction locations with concentrated laser irradiation.
In some embodiments, it is also possible that the second exposure area 200 is a ring beam, which can be heated uniformly by not directly illuminating (or exposing) the josephson junction 300. The josephson junction 300 can be heated uniformly by heat conduction through the region near the heated junction region. Such a process of heating with a ring beam may allow for a more controlled heating of the josephson junction 300, which may result in an accurate correction of the qubit frequency. In some embodiments, uniformly increasing the temperature of the josephson junction 300 may include applying a heat source to the josephson junction 300 as a function of time and heat source power level. That is, the center of the heating ring would be heated uniformly by heat conduction without direct exposure irradiation, as the energy flows down the gradient. When the annular beam is initially directed at a material, a downward energy gradient enters the annulus and exits the annulus.
Further, in this embodiment, the spatial light modulator 18 may be adjusted such that the light intensity of the first exposure region 100 is smaller than the light intensity of the second exposure region 200, where the smaller light intensity of the first exposure region 100 can effectively reduce the damage of the josephson junction 300 by the laser, and since the first exposure region 100 is in the second exposure region 200, the larger light intensity of the second exposure region 200 can allow heat to collect near the junction region, and the josephson junction 300 is annealed by using heat conduction. In this way, both the damage to the josephson junction 300 and the annealing effect of the josephson junction 300 can be reduced. Referring to fig. 2, in some embodiments, the light intensity of the first exposure area 100 may be set to 0, that is, the first exposure area 100 is not exposed. In fig. 2, the white area represents a first exposure area 100 with a light intensity of 0 on the superconducting quantum chip, and the slash area represents a second exposure area 200 with a higher light intensity on the superconducting quantum chip. As can be seen from fig. 2, in order to prevent the junction region from being damaged due to the direct irradiation of the junction region with the laser light, the light in the circular region around the junction region is turned off, and the light intensity in the first exposure region 100 where the josephson junction 300 is located is 0 by modulating the spatial light modulator 18, and other structures such as the wire 400 are located in the second exposure region 200, so that the damage of the josephson junction 300 caused by the laser light can be reduced to the greatest extent. At this time, the josephson junction 300 is annealed by thermal conduction of the second exposed region 200.
Further, in the present embodiment, the light intensity of the first exposure region 100 gradually decreases from the periphery to the center position, and the josephson junction 300 of the superconducting quantum chip is disposed at the center position of the first exposure region 100. Referring to fig. 3, the color depth of the exposure area in fig. 3 is proportional to the light intensity, and it can be seen from fig. 3 that the light intensity of the second exposure area 200 is larger, the light intensity of the first exposure area 100 gradually decreases from the periphery to the center, and the light intensity of the josephson junction 300 at the center of the first exposure area 100 is 0.
In addition to the exposure modes illustrated in fig. 2 and 3, other exposure modes are also possible, and referring to fig. 4, the black dense dot area illustrated in fig. 4 is the exposure area with the maximum light intensity, the slash area is the area with the smaller light intensity, and the white area is the area with the light intensity of 0. Those skilled in the art will appreciate that there are many other exposure modes, and these are not described in detail herein.
Specifically, the image acquisition device 25 is further configured to acquire an exposure area distribution situation of currently illuminating the superconducting quantum chip, and the spatial light modulator 18 is further configured to adjust the received laser light based on the exposure area distribution situation of the superconducting quantum chip. Taking fig. 2 as an example, when a part of the structure of the superconducting quantum chip is as shown in fig. 2, the image acquisition device 25 acquires and analyzes an image of the distribution of the exposure area currently irradiating the superconducting quantum chip, and if it is found that the area of the first exposure area 100 which is currently white is too large, the annealing effect of the junction area may be poor, and at this time, the spatial light modulator 18 performs a regulation action to reduce the first exposure area 100. Those skilled in the art will appreciate that the image capture device 25 may be an image sensor, a camera, or other hardware having image capture capabilities, without limitation. In this embodiment, the image capturing device 25 is preferably a camera.
Still further, the laser annealing apparatus further comprises a control device in communication with the image acquisition device 25 and the spatial light modulator 18, the control device being configured to send control instructions to the spatial light modulator 18 based on the physical topology to cause the spatial light modulator 18 to adjust the received laser light.
Specifically, the control device is further configured to determine whether the josephson junction 300 of the superconducting quantum chip is located in the first exposure area 100 according to the distribution situation of the exposure area on the superconducting quantum chip, and send a control instruction to make the spatial light modulator 18 adjust the output laser to adjust the position of the first exposure area 100 when the determination result is no.
It should be noted that, in this embodiment, the control device is a device with data forwarding and processing functions, and FPGA (Field Programmable Gate Array), MCU (Microcontroller Unit), MPU (Microprocessor Unit), DSP (Digital Signal Processor) or the like may be generally selected. In this embodiment, the control device may be preferably an FPGA, and in other embodiments, other devices having similar data processing functions may be used, which is not limited herein.
Specifically, with continued reference to fig. 1, the laser annealing apparatus may further include a first spectroscopic device 11, a light intensity detection device 12, and a light intensity control device, in addition to the above components.
The first light splitting device 11 is connected to an output end of the laser light source 10, and is configured to split part of the laser light to the light intensity detecting device 12 and transmit the rest of the laser light to the light intensity controlling device. The light intensity detection device 12 is configured to detect the light intensity of the laser, and the light intensity control device is connected to the output end of the first beam splitter 11 and the light intensity detection device 12, and is configured to adjust the light intensity of the output laser based on the detection result of the light intensity detection device 12. In this embodiment, the laser source 10 may select a 532nm laser with a power of at least 2 watts, and the laser generally has a power stability of about 1%. The laser output from the laser device is split into a beam of light by the first beam splitter 11 and then sent to the light intensity detector 12 for detecting the light intensity in real time. The light intensity control device adjusts the light intensity in real time after the signal of the light intensity detection device 12 is collected. The optical power stability can be improved to 0.1%, and the high optical power stability is an important index for maintaining the stability of the laser annealing parameters. It will be appreciated by those skilled in the art that in the present embodiment, the light intensity detection device 12 may be a photoelectric sensor, and in other embodiments, the light intensity detection device 12 may be other hardware having a light intensity detection function, which is not limited herein.
Specifically, the laser annealing device may further include a beam expanding device 13, a light equalizing device 14, and a collimating device 15, where the beam expanding device 13 is connected to the output end of the light intensity control device, and is configured to expand the beam diameter of the input laser. The light equalizing device 14 is connected with the output end of the beam expanding device 13, and is used for converting the laser output by the beam expanding device 13 into uniformly distributed light beams. The collimating device 15 is connected to the output end of the light equalizing device 14, and is configured to output the laser light output by the light equalizing device 14 onto the spatial light modulator 18. The laser beam is expanded, homogenized and collimated to form a uniform beam that matches the size of the spatial light modulator 18. The beam expander 13 is typically a set of lenses that expands the laser beam by a factor of 3-10 with a diameter of 1-4 mm. The light equalizing device 14 is typically a fly eye lens, and can convert a gaussian-distributed light beam into a uniformly distributed light beam. The collimator 15 irradiates a uniformly distributed light spot onto the spatial light modulator 18.
Optionally, the laser annealing apparatus further includes a first light source 20, a second light splitting device 22, and a third light splitting device 23, where the first light source 20 is configured to provide a light source for the image capturing device 25; the second beam splitter 22 is disposed between the spatial light modulator 18 and the objective lens 26; the third light-splitting device 23 is connected to the first light source 20, the second light-splitting device 22 and the image acquisition device 25, and the third light-splitting device 23 cooperates with the second light-splitting device 22 to output the light source of the first light source 20 onto the superconducting quantum chip and output the light reflected from the superconducting quantum chip onto the image acquisition device 25.
With continued reference to fig. 6, fig. 6 is a schematic structural diagram of a specific example of a laser annealing device according to the present embodiment, and as can be seen from fig. 6, the laser annealing device may further include, in addition to the above-described components, a focusing lens 16, a prism 17, an optical trap 19, an illumination light source lens group 21, and a barrel lens 24 for better performing laser annealing.
Based on the same inventive concept, the embodiment also provides a laser annealing method for a superconducting quantum chip, which comprises the following steps:
s100: providing a superconducting quantum chip;
s200: the image acquisition device acquires the physical topological structure of the superconducting quantum chip at present;
s300: the laser light source generates and outputs laser;
s400: a spatial light modulator receives the laser light from the laser light source, adjusts the received laser light based on the physical topology of the superconducting quantum chip so that the laser light forms a first exposure region on the superconducting quantum chip focused on a Josephson junction of the superconducting quantum chip and a second exposure region surrounding the Josephson junction;
s500: and the objective lens transmits the laser output from the spatial light modulator to the superconducting quantum chip for annealing treatment.
Specifically, the method further comprises:
the image acquisition device acquires the distribution condition of an exposure area currently irradiated on the superconducting quantum chip;
the spatial light modulator is used for adjusting the received laser based on the distribution condition of the exposure area on the superconducting quantum chip.
Specifically, the method further comprises:
the control device is used for sending a control instruction to the spatial light modulator based on the physical topological structure so as to enable the spatial light modulator to adjust the received laser.
Optionally, the method further comprises:
and the control device judges whether the Josephson junction of the superconducting quantum chip is in the first exposure area according to the distribution condition of the exposure area on the superconducting quantum chip, and when the judgment result is negative, the control device sends a control instruction to enable the spatial light modulator to adjust the output laser so as to adjust the position of the first exposure area.
Further, the light intensity of the first exposure region gradually decreases from the periphery to the center position, and the josephson junction of the superconducting quantum chip is arranged at the center position of the first exposure region.
Further, the light intensity of the first exposure region is 0.
The laser annealing method for the superconducting quantum chip and the laser annealing method for the superconducting quantum chip belong to the same inventive concept, so that the method has the same beneficial effects and is not described in detail herein.
In the description of the present specification, a description of the terms "one embodiment," "some embodiments," "examples," or "particular examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments. Further, one skilled in the art can engage and combine the different embodiments or examples described in this specification.
The foregoing is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any person skilled in the art will make any equivalent substitution or modification to the technical solution and technical content disclosed in the invention without departing from the scope of the technical solution of the invention, and the technical solution of the invention is not departing from the scope of the invention.
Claims (17)
1. A laser annealing device for a superconducting quantum chip, comprising:
the bearing device is used for bearing a superconducting quantum chip;
the image acquisition device is used for acquiring the physical topological structure of the superconducting quantum chip;
a laser light source for generating and outputting laser light;
a spatial light modulator communicatively connected to the image acquisition device for receiving the laser light from the laser light source, adjusting the received laser light based on the physical topology of the superconducting quantum chip so that the laser light forms a first exposure region on the superconducting quantum chip focused on a josephson junction of the superconducting quantum chip and a second exposure region surrounding the josephson junction;
and the objective lens is used for transmitting the laser output from the spatial light modulator to the superconducting quantum chip for annealing treatment.
2. The laser annealing apparatus according to claim 1, wherein the image acquisition device is further configured to acquire an exposure area distribution condition currently illuminating the superconducting quantum chip;
the spatial light modulator is also used for adjusting the received laser based on the distribution condition of the exposure area on the superconducting quantum chip.
3. The laser annealing apparatus according to claim 2, further comprising a control device;
the control device is in communication connection with the image acquisition device and the spatial light modulator, and is used for sending a control instruction to the spatial light modulator based on the physical topological structure so as to enable the spatial light modulator to adjust the received laser.
4. The laser annealing device of claim 3, wherein the control device is further configured to determine whether a josephson junction of the superconducting quantum chip is in the first exposure region according to a distribution of exposure regions on the superconducting quantum chip, and send a control command to cause the spatial light modulator to adjust the output laser light to adjust a position of the first exposure region when the determination result is negative.
5. The laser annealing apparatus according to any one of claims 1 to 4, wherein a light intensity of the first exposure region is smaller than a light intensity of the second exposure region.
6. The laser annealing apparatus of any of claims 1-4, wherein the first exposure region has a decreasing intensity of light from the periphery to a central location, and the josephson junction of the superconducting quantum chip is disposed at the central location of the first exposure region.
7. The laser annealing apparatus according to any one of claims 1 to 4, wherein the light intensity of the first exposure region is 0.
8. The laser annealing device according to claim 1, wherein the spatial light modulator is provided with a plurality of reflecting mirrors, the plurality of reflecting mirrors are distributed in two dimensions, and each reflecting mirror is independently controlled to regulate and control the received laser light respectively.
9. The laser annealing apparatus according to claim 1, further comprising:
the first light splitting device is connected with the output end of the laser light source and is used for splitting part of laser to the light intensity detection device and transmitting the rest of laser to the light intensity control device;
a light intensity detection device for detecting the light intensity of the laser;
and the light intensity control device is connected with the output end of the first light splitting device and the light intensity detection device and is used for adjusting the light intensity of the output laser based on the detection result of the light intensity detection device.
10. The laser annealing apparatus according to claim 9, further comprising:
the beam expanding device is connected with the output end of the light intensity control device and is used for expanding the beam diameter of the input laser;
the light equalizing device is connected with the output end of the beam expanding device and is used for converting the laser output by the beam expanding device into uniformly distributed light beams;
and the collimating device is connected with the output end of the light homogenizing device and is used for outputting the laser output by the light homogenizing device to the spatial light modulator.
11. The laser annealing apparatus according to claim 10, further comprising:
a first light source for providing a light source for the image acquisition device;
the second light splitting device is arranged between the spatial light modulator and the objective lens;
and the third light splitting device is connected with the first light source, the second light splitting device and the image acquisition device, and is matched with the second light splitting device to output the light source of the first light source to the superconducting quantum chip and output the light reflected by the superconducting quantum chip to the image acquisition device.
12. A laser annealing method for a superconducting quantum chip, comprising:
providing a superconducting quantum chip;
the image acquisition device acquires the physical topological structure of the superconducting quantum chip at present;
the laser light source generates and outputs laser;
a spatial light modulator receives the laser light from the laser light source, adjusts the received laser light based on the physical topology of the superconducting quantum chip so that the laser light forms a first exposure region on the superconducting quantum chip focused on a Josephson junction of the superconducting quantum chip and a second exposure region surrounding the Josephson junction;
and the objective lens transmits the laser output from the spatial light modulator to the superconducting quantum chip for annealing treatment.
13. The laser annealing method according to claim 12, further comprising:
the image acquisition device acquires the distribution condition of an exposure area currently irradiated on the superconducting quantum chip;
the spatial light modulator is used for adjusting the received laser based on the distribution condition of the exposure area on the superconducting quantum chip.
14. The laser annealing method according to claim 12, further comprising:
the control device is used for sending a control instruction to the spatial light modulator based on the physical topological structure so as to enable the spatial light modulator to adjust the received laser.
15. The laser annealing method of claim 14, further comprising:
and the control device judges whether the Josephson junction of the superconducting quantum chip is in the first exposure area according to the distribution condition of the exposure area on the superconducting quantum chip, and when the judgment result is negative, the control device sends a control instruction to enable the spatial light modulator to adjust the output laser so as to adjust the position of the first exposure area.
16. The laser annealing method according to any of claims 12-15, wherein the light intensity of the first exposure region gradually decreases from the periphery to the central position, and the josephson junction of the superconducting quantum chip is arranged at the central position of the first exposure region.
17. The laser annealing method according to any one of claims 12 to 15, wherein the light intensity of said first exposure region is 0.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118409A (en) * | 2008-11-11 | 2010-05-27 | Ulvac Japan Ltd | Laser annealing apparatus and laser annealing method |
| US20190165243A1 (en) * | 2017-11-28 | 2019-05-30 | International Business Machines Corporation | Adjustment of qubit frequency through annealing |
| US20190165246A1 (en) * | 2017-11-28 | 2019-05-30 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
| US10510943B1 (en) * | 2018-08-28 | 2019-12-17 | International Business Machines Corporation | Structure for an antenna chip for qubit annealing |
| US20200075833A1 (en) * | 2018-08-28 | 2020-03-05 | International Business Machines Corporation | Methods for annealing qubits with an antenna chip |
-
2021
- 2021-12-29 CN CN202111682239.8A patent/CN116419659A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010118409A (en) * | 2008-11-11 | 2010-05-27 | Ulvac Japan Ltd | Laser annealing apparatus and laser annealing method |
| US20190165243A1 (en) * | 2017-11-28 | 2019-05-30 | International Business Machines Corporation | Adjustment of qubit frequency through annealing |
| US20190165246A1 (en) * | 2017-11-28 | 2019-05-30 | International Business Machines Corporation | Laser annealing of qubits with structured illumination |
| US10510943B1 (en) * | 2018-08-28 | 2019-12-17 | International Business Machines Corporation | Structure for an antenna chip for qubit annealing |
| US20200075833A1 (en) * | 2018-08-28 | 2020-03-05 | International Business Machines Corporation | Methods for annealing qubits with an antenna chip |
| CN112513890A (en) * | 2018-08-28 | 2021-03-16 | 国际商业机器公司 | Antenna chip structure for qubit annealing |
| CN112567397A (en) * | 2018-08-28 | 2021-03-26 | 国际商业机器公司 | Method for annealing qubits using an antenna chip |
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