Disclosure of Invention
The invention aims to provide an early warning system for a central processing unit of an optical cable cutting machine, which is used for analyzing the environment where the central processing unit in the optical cable cutting machine is located when the environment where the central processing unit is located is at high risk, establishing a data set for the subsequent evaluation coefficient of a high-risk signal, and if the evaluation coefficient of the environment where the high-risk signal is located is not a low-risk condition in general, namely the high-risk signal is not an accidental signal, sending an early warning prompt, timely maintaining the central processing unit, further timely maintaining the optical cable cutting machine, effectively reducing the damage rate and the damage degree of the central processing unit, further effectively reducing the damage rate and the damage degree of the optical cable cutting machine, and solving the problems in the background technology.
In order to achieve the above object, the present invention provides the following technical solutions: an early warning system for a central processing unit of an optical cable cutting machine comprises a data acquisition module, an analysis model building module, a comparison module, a comprehensive analysis module and an early warning module;
the data acquisition module is used for acquiring environmental parameters of the central processing unit in the optical cable cutting machine when the central processing unit operates, and transmitting the environmental parameters to the analysis model building module after the environmental parameters are acquired;
the analysis model building module builds a data analysis model on the collected environmental parameters, generates an evaluation coefficient and transmits the evaluation coefficient to the comparison module;
the comparison module is used for comparing the generated evaluation coefficient with a threshold value to generate a risk signal, wherein the risk signal comprises a high risk signal and a low risk signal, and transmitting the risk signal to the comprehensive analysis module;
and the comprehensive analysis module is used for establishing a data set with subsequent evaluation coefficients of the high-risk signal after acquiring the risk signal, comprehensively analyzing the evaluation coefficients in the data set and transmitting the analyzed result to the early warning module.
Preferably, the environmental parameters include the influence coefficient of current and voltage, the deviation rate of temperature and humidity and the interference coefficient of magnetic field, and after acquisition, the data acquisition module marks the influence coefficient of current and voltage as LYi, the deviation rate of temperature and humidity as WSi and the interference coefficient of magnetic field as CCi.
Preferably, the influence coefficients of the current and the voltage, that is, the influence of the current and the voltage on the electrolytic capacitor in the central processing unit, are obtained as follows:
setting a gradient range Imin-Imax for the current, acquiring the current value of the electrolytic capacitor in the central processing unit in real time, calibrating the current value of the electrolytic capacitor as I, if I is in the gradient range Imin-Imax, indicating that the current value of the electrolytic capacitor is normal, and if I is not in the gradient range Imin-Imax, indicating that the current value of the electrolytic capacitor is abnormal;
setting a gradient range Vmin-Vmax for the voltage, acquiring the voltage value of the electrolytic capacitor in the central processing unit in real time, calibrating the voltage value of the electrolytic capacitor as V, if V is in the gradient range Vmin-Vmax, indicating that the voltage value of the electrolytic capacitor is normal, and if V is not in the gradient range Vmin-Vmax, indicating that the voltage value of the electrolytic capacitor is abnormal;
the influence coefficients of the current and the voltage are calculated through a formula, and the expression is as follows:
the method comprises the steps of carrying out a first treatment on the surface of the Where DJ (t) is the capacitance value of the electrolytic capacitor, it1 to It2 are time periods in which the current value in the electrolytic capacitor is not in the gradient range Imin to Imax, and Vt1 to Vt2 are time periods in which the voltage value in the electrolytic capacitor is not in the gradient range Vmin to Vmax.
Preferably, the deviation rate of the temperature and the humidity, namely the deviation rate between the temperature and the humidity of the environment where the central processing unit is located and the optimal temperature and humidity for the central processing unit to operate, and the obtained logic is as follows:
the optimal temperature of the CPU is marked as Qx, and the temperature of the CPU during operation is marked as
The optimal humidity of the CPU is marked as Mx, and the humidity of the CPU during operation is marked as +.>
The expression of the deviation ratio WSi of the temperature and the humidity is: />
The method comprises the steps of carrying out a first treatment on the surface of the In (1) the->
For the deviation of temperature, +.>
Is the deviation rate of humidity.
Preferably, the magnetic field interference coefficient, that is, the interference degree of the magnetic field to the central processing unit, is mainly generated by induced current and induced potential caused by the change of magnetic flux, when the change of magnetic induction intensity passes through the conductor loop, induced current is generated inside the conductor, the phenomenon is called electromagnetic induction, and the calculation formula of the interference voltage is as follows:
wherein N is the number of turns of the conductor winding, < >>
Is the amount of change in magnetic flux, Δt is the time interval, and the magnetic field disturbance coefficient CCi is obtained from the disturbance voltage value.
Preferably, after the influence coefficient LYi of the current and the voltage, the deviation ratio WSi of the temperature and the humidity and the magnetic field interference coefficient CCi are obtained, a data analysis model is established, and an evaluation coefficient PJXi is generated according to the following formula:
the method comprises the steps of carrying out a first treatment on the surface of the Wherein M is an error correction factor, the value is 1.2895,
、/>
、/>
the influence coefficients of current and voltage, the deviation rate of temperature and humidity and the preset proportional coefficient of magnetic field interference coefficient are respectively +.>
。
Preferably, the generated evaluation coefficient PJXi is compared with the threshold value YY1, and if the evaluation coefficient PJXi is equal to or greater than the threshold value YY1, a low risk signal is generated by the comparison module, and if the evaluation coefficient PJXi is less than the threshold value YY1, a high risk signal is generated by the comparison module.
Preferably, after the comprehensive analysis module acquires the high risk signal, establishing a data set with subsequent evaluation coefficients of the high risk signal, and calibrating the data set as E
I is the number of subsequent evaluation coefficients of the high risk signal, i=1, 2, 3, 4, v is equal to or greater than 2, v is a positive integer, the average value and the discrete degree value of the evaluation coefficients in the data set are calculated, and the average value and the discrete degree value are respectively calibrated as +_>
And Rx, then: />
The method comprises the steps of carrying out a first treatment on the surface of the Then: />
。
Preferably, an average value of the evaluation coefficients in the data set is obtained
After the discrete degree value Rx, the average value is compared with a threshold value YY1, the discrete degree value is compared with a threshold value YY2, if the average value Yb is larger than or equal to the threshold value YZ1 and Rx is smaller than the threshold value YZ2, a non-early warning signal is generated through the comprehensive analysis module and is transmitted to the early warning module, the early warning module does not send out early warning prompts, and if the average value Yb is larger than or equal to the threshold value YZ1 and Rx is larger than or equal to the threshold value YZ2, or the average value Yb is smaller than or equal to the threshold value YZ1 and Rx is smaller than the threshold value YZ2, the early warning signal is generated through the comprehensive analysis module and is transmitted to the early warning module, and the early warning module sends out early warning prompts to prompt that a user central processor is in a severe environment.
In the technical scheme, the invention has the technical effects and advantages that:
according to the invention, the environment where the central processor in the optical cable cutting machine is located is analyzed, when the environment where the central processor is located is at high risk, a data set is built by the subsequent evaluation coefficients of the high-risk signals, if the evaluation coefficients of the environment where the high-risk signals are located are not in the low-risk condition generally, namely, the high-risk signals are not accidental signals, an early warning prompt is sent to prompt a user that the central processor is located in a severe environment, so that the problem that the environment where the central processor is located is severe is found timely, the central processor is maintained timely, the optical cable cutting machine is maintained timely, the damage rate and the damage degree of the central processor are effectively reduced, the damage rate and the damage degree of the optical cable cutting machine are effectively reduced, the optical cable cutting machine is effectively damaged due to sudden damage of the central processor in the customization process, and the normal customization efficiency of customization staff is ensured.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these example embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art.
The invention provides an early warning system for a central processing unit of an optical cable cutting machine, which is shown in figure 1, and comprises a data acquisition module, an analysis model building module, a comparison module, a comprehensive analysis module and an early warning module;
the data acquisition module is used for acquiring environmental parameters of the central processing unit in the optical cable cutting machine when the central processing unit operates, and transmitting the environmental parameters to the analysis model building module after the environmental parameters are acquired;
the environmental parameters comprise an influence coefficient of current and voltage, a deviation rate of temperature and humidity and an interference coefficient of a magnetic field, and after acquisition, the data acquisition module marks the influence coefficient of the current and the voltage as LYi, marks the deviation rate of the temperature and humidity as WSi and marks the interference coefficient of the magnetic field as CCi;
the influence coefficients of the current and the voltage, namely the influence of the current and the voltage on the electrolytic capacitor in the central processing unit, are obtained as follows:
setting a gradient range Imin-Imax for the current, acquiring the current value of the electrolytic capacitor in the central processing unit in real time, calibrating the current value of the electrolytic capacitor as I, if I is in the gradient range Imin-Imax, indicating that the current value of the electrolytic capacitor is normal, and if I is not in the gradient range Imin-Imax, indicating that the current value of the electrolytic capacitor is abnormal;
setting a gradient range Vmin-Vmax for the voltage, acquiring the voltage value of the electrolytic capacitor in the central processing unit in real time, calibrating the voltage value of the electrolytic capacitor as V, if V is in the gradient range Vmin-Vmax, indicating that the voltage value of the electrolytic capacitor is normal, and if V is not in the gradient range Vmin-Vmax, indicating that the voltage value of the electrolytic capacitor is abnormal;
it should be noted that, the current and the voltage of the electrolytic capacitor in the central processing unit can be obtained by the current sensor and the voltage sensor respectively;
the influence coefficients of the current and the voltage are calculated through a formula, and the expression is as follows:
the method comprises the steps of carrying out a first treatment on the surface of the Wherein DJ (t) is the capacitance value of the electrolytic capacitor, the capacitance value of the electrolytic capacitor can be obtained through a capacitance sensor, it1 to It2 are the time periods that the current value in the electrolytic capacitor is not in the gradient range Imin to Imax, and Vt1 to Vt2 are the time periods that the voltage value in the electrolytic capacitor is not in the gradient range Vmin to Vmax;
the electrolytic capacitor is a common electronic component and mainly used for storing charges or electric energy, filtering, stabilizing voltage, eliminating alternating current signals and the like, is usually used for storing the charges of all modules in the chip in the central processing unit, so that the central processing unit can work normally, and when the current and the voltage are insufficient, the electrolytic capacitor in the central processing unit can not obtain enough charge storage, so that the central processing unit can not work normally, or noise, voltage fluctuation and the like can occur during work; when the current and the voltage are too high, the electrolytic capacitor may be impacted by the overvoltage, so that the electrolyte in the electrolytic capacitor is evaporated or leaked, and even may be exploded or burnt out, thereby causing the damage or the failure of the central processing unit to work normally;
when the current or voltage is too high, the capacitance value of the electrolytic capacitor may be reduced, because under the action of the too high current or voltage, the oxide layer in the electrolytic capacitor may be damaged and peeled off, the electrolyte may also undergo electrochemical reaction change, so as to reduce the capacitance value, the capacitance value of the electrolytic capacitor is mainly determined by the property of the dielectric medium (namely the electrolyte) and the physical structure of the capacitor, the electrolyte of the electrolytic capacitor is generally a liquid containing chemical substances, the property of the electrolyte is closely related to the electric field strength and the voltage in the capacitor, if the current or voltage is insufficient, the electric field strength in the capacitor may be reduced, the reaction speed of the chemical substances in the electrolyte may be slowed down, so that the oxide layer in the electrolyte is thickened, and the capacitance value of the capacitor is reduced, therefore, the abnormal current and the abnormal voltage of the electrolytic capacitor in the central processor are monitored, and the environment where the central processor is located can be monitored;
the deviation rate of the temperature and the humidity, namely the deviation rate between the temperature and the humidity of the environment where the central processing unit is located and the optimal temperature and humidity for the central processing unit to operate, and the obtained logic is as follows:
the optimal temperature of the CPU is marked as Qx, and the temperature of the CPU during operation is marked as
The optimal humidity of the CPU operation is marked as Mx, and the humidity of the CPU operation is marked as +.>
The expression of the deviation ratio WSi of the temperature and the humidity is: />
The method comprises the steps of carrying out a first treatment on the surface of the In (1) the->
For the deviation of temperature, +.>
Is the deviation rate of humidity;
the high temperature, the high humidity, the low temperature and the low humidity all affect the performance of the central processing unit, and under the high temperature environment, the running speed of the central processing unit can be reduced, even the system breakdown can be caused, because the high temperature can lead to the electronic speed in the transistor to be reduced, the mobility of electrons to be reduced, thereby affecting the running speed of the central processing unit, and in addition, the high temperature can lead to the too high heat of the central processing unit, and the electronic elements of the central processing unit can be damaged, thereby affecting the performance and the service life of the central processing unit; the performance of the cpu is also affected in a low temperature environment, the low temperature may cause the speed of the transistor inside the cpu to be fast, the electron mobility to be increased, which may cause the cpu to generate errors or breakdown, and in addition, the low temperature may cause the metal wires in the cpu to shrink, resulting in poor contact between the elements, thereby affecting the performance of the cpu; in a high humidity environment, circuits inside the central processing unit may be corroded by moisture, so that the performance of the central processing unit is reduced, and in addition, when the humidity is high, water molecules in the air also affect a radiator of the central processing unit, so that the radiating effect is affected, and the central processing unit is overheated; in a low-humidity environment, static electricity is easy to generate, and can influence electronic elements of the central processing unit, so that performance is reduced or the electronic elements are failed, in addition, the low-humidity environment can also cause static discharge, and the electronic elements in the central processing unit can be damaged, so that the performance and the service life of the central processing unit are influenced, and therefore, the temperature and the humidity in the central processing unit are monitored, and the environment where the central processing unit is located can be monitored;
the magnetic field interference coefficient, that is, the interference degree of the magnetic field to the central processing unit, is mainly generated by induced current and induced potential caused by the change of magnetic flux, when the change of the magnetic induction intensity passes through the conductor loop, the induced current is generated inside the conductor, the phenomenon is called electromagnetic induction, and the calculation formula of the interference voltage is as follows:
wherein N is the number of turns of the conductor winding, < >>
Is the variation of magnetic flux, Δt is the time interval, and the magnetic field interference coefficient CCi is obtained through the interference voltage value;
it should be noted that, in electromagnetic induction, the direction of the induced voltage always causes an effect of blocking the change of the magnetic field in the direction of the induced current, and this direction is called "Lenz law", and the negative sign "-" indicates the blocking effect in this direction, so in the formula "-" indicates the inverse relationship between the direction of the induced voltage and the direction of the induced current;
the magnetic field can interfere the electronic movement of the internal circuit of the central processing unit, so that the problems of signal distortion, jitter and the like are caused, the interference can cause the misoperation of the central processing unit or reduce the working efficiency of the central processing unit, the magnetic field can cause the energy level structure of the internal electronics of the central processing unit to be changed, the electric performance of the central processing unit is changed, the change can cause the electric parameters of the central processing unit to be changed, such as current, voltage and the like, so as to influence the stability and the reliability of the central processing unit, the magnetic field can also influence the magnetic memory or the magnetic storage medium of the central processing unit, so that data are lost or data are wrong, and the magnetic storage medium is usually used for storage equipment such as a hard disk, a floppy disk and the like of a computer, therefore, the magnetic field in the central processing unit is monitored, and the environment where the central processing unit is located can be monitored;
the analysis model building module builds a data analysis model on the collected environmental parameters, generates an evaluation coefficient and transmits the evaluation coefficient to the comparison module;
after obtaining the influence coefficient LYi of the current and the voltage, the deviation rate WSi of the temperature and the humidity and the magnetic field interference coefficient CCi, establishing a data analysis model to generate an evaluation coefficient PJxi according to the following formula:
the method comprises the steps of carrying out a first treatment on the surface of the Wherein M is an error correction factor, the value is 1.2895,
、/>
、/>
the influence coefficients of current and voltage, the deviation rate of temperature and humidity and the preset proportional coefficient of magnetic field interference coefficient are respectively +.>
;
The formula shows that the larger the influence coefficient of the current and the voltage is, the larger the deviation rate of the temperature and the humidity is, the larger the magnetic field interference coefficient is, namely the smaller the performance value of the evaluation coefficient PJXi is, the worse the environment where the central processing unit is positioned is, the smaller the influence coefficient of the current and the voltage is, the smaller the deviation rate of the temperature and the humidity is, the smaller the magnetic field interference coefficient is, namely the larger the performance value of the evaluation coefficient PJXi is, and the better the environment where the central processing unit is positioned is;
the comparison module is used for comparing the generated evaluation coefficient with a threshold value to generate a risk signal, wherein the risk signal comprises a high risk signal and a low risk signal, and transmitting the risk signal to the comprehensive analysis module;
comparing the generated evaluation coefficient PJxi with a threshold value YY1, if the evaluation coefficient PJxi is larger than or equal to the threshold value YY1, indicating that the environment where the central processing unit is positioned is good, generating a low risk signal through the comparison module, and if the evaluation coefficient PJxi is smaller than the threshold value YY1, indicating that the environment where the central processing unit is positioned is poor, generating a high risk signal through the comparison module;
the comprehensive analysis module is used for establishing a data set of subsequent evaluation coefficients of the high-risk signal after acquiring the risk signal, comprehensively analyzing the evaluation coefficients in the data set and transmitting the analyzed result to the early warning module;
after the comprehensive analysis module acquires the high risk signal, establishing a data set with subsequent evaluation coefficients of the high risk signal, and calibrating the data set as E, then
I is the number of subsequent evaluation coefficients of the high risk signal, i=1, 2, 3, 4, v is equal to or greater than 2, v is a positive integer, the average value and the discrete degree value of the evaluation coefficients in the data set are calculated, and the average value and the discrete degree value are respectively calibrated as +_>
And Rx, then: />
The method comprises the steps of carrying out a first treatment on the surface of the Then: />
;
Obtaining average value of evaluation coefficients in data set
After the discrete degree value Rx is obtained, the average value is compared with a threshold value YY1, the discrete degree value is compared with a threshold value YY2, if the average value Yb is larger than or equal to the threshold value YZ1 and Rx is smaller than the threshold value YZ2, the evaluation coefficient PJxi in the data set is generally larger than or equal to the threshold value YZ1, the subsequent evaluation coefficient of the high risk signal is generally a low risk signal, the environment where the central processing unit is positioned after the high risk signal is generally good, the high risk signal is further indicated to be an accidental signal, a non-early warning signal is generated through the comprehensive analysis module and is transmitted to the early warning module, the early warning module does not send an early warning prompt, if the average value Yb is larger than or equal to the threshold value YZ1 and Rx is larger than or equal to the threshold value YZ2, or the average value Yb is smaller than or equal to the threshold value YZ1 and Rx is smaller than or the threshold value YZ2, the method comprises the steps that an evaluation coefficient PJxi in a data set is not generally larger than or equal to a threshold YZ1, a subsequent evaluation coefficient of a high-risk signal is not generally a low-risk signal, the high-risk signal is not an accidental signal, an early warning signal is generated through a comprehensive analysis module and is transmitted to an early warning module, the early warning module sends an early warning prompt to prompt a user that a central processor is in a severe environment, the problem that the central processor is in the severe environment is found out in time, so that the central processor is maintained in time, the personalized optical cable cutter of the artificial quartz stone plate is maintained in time, the damage rate and damage degree of the central processor are effectively reduced, and the damage rate and damage degree of the optical cable cutter are effectively reduced;
according to the invention, the environmental parameters of the central processing unit in the optical cable cutting machine are collected, the collected environmental parameters are built into a data analysis model, the generated evaluation coefficients are compared with the threshold value, the risk signals are generated, when the environment of the central processing unit is at high risk, the subsequent evaluation coefficients of the high risk signals are built into a data set, the evaluation coefficients in the data set are comprehensively analyzed, if the evaluation coefficients of the environment of the high risk signals are not universal low risk conditions, namely the high risk signals are not accidental signals, an early warning prompt is sent, the problem that the environment of the central processing unit is severe is prompted to use personnel, and therefore the central processing unit is timely maintained, the damage rate and the damage degree of the central processing unit are effectively reduced, the damage rate and the damage degree of the optical cable cutting machine are effectively reduced, the optical cable cutting machine is effectively damaged due to sudden occurrence of the central processing unit in the customization process, and the normal customization efficiency of customization personnel is ensured.
In the present application, the acquisition logic of the threshold YY1 is: preset scaling factor in evaluation factor PJXi
、/>
、/>
After determining that the influence of the current and the voltage has a maximum value (when the influence of the current and the voltage on the central processing unit exceeds the maximum value, the central processing unit cannot be used), the deviation rate of the temperature and the humidity and the influence of the magnetic field interference coefficient on the central processing unit are the same, and the influence coefficient of the current and the voltage, the deviation rate of the temperature and the humidity, the influence coefficient of the maximum current and the voltage in the magnetic field interference coefficient, the deviation rate of the maximum temperature and the maximum magnetic field interference coefficient are brought into a calculation formula of the evaluation coefficient PJxi to obtain the maximum evaluation coefficient PJxi, and in order to enable the monitoring system to early warn in advance, 85% of the maximum evaluation coefficient PJxi is taken as a threshold YY1.
The above formulas are all formulas with dimensions removed and numerical values calculated, the formulas are formulas with a large amount of data collected for software simulation to obtain the latest real situation, and preset parameters in the formulas are set by those skilled in the art according to the actual situation.
Those of ordinary skill in the art will appreciate that the various illustrative elements and algorithm steps described in connection with the embodiments disclosed herein may be implemented as electronic hardware, or combinations of computer software and electronic hardware. Whether such functionality is implemented as hardware or software depends upon the particular application and design constraints imposed on the solution. Skilled artisans may implement the described functionality in varying ways for each particular application, but such implementation decisions should not be interpreted as causing a departure from the scope of the present application.
In the several embodiments provided in this application, it should be understood that the disclosed systems and methods may be implemented in other ways. For example, the embodiments described above are merely illustrative, e.g., the division of the elements is merely a logical functional division, and there may be additional divisions in actual implementation, e.g., multiple elements or components may be combined or integrated into another system, or some features may be omitted, or not performed. Alternatively, the coupling or direct coupling or communication connection shown or discussed with each other may be an indirect coupling or communication connection via some interfaces, devices or units, which may be in electrical, mechanical or other form.
The units described as separate units may or may not be physically separate, and units shown as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional unit in each embodiment of the present application may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit.
The foregoing is merely specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the present application, and the changes and substitutions are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.