CN116399484A - High overload pressure sensor and preparation method thereof - Google Patents
High overload pressure sensor and preparation method thereof Download PDFInfo
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- CN116399484A CN116399484A CN202310249941.8A CN202310249941A CN116399484A CN 116399484 A CN116399484 A CN 116399484A CN 202310249941 A CN202310249941 A CN 202310249941A CN 116399484 A CN116399484 A CN 116399484A
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- 238000002360 preparation method Methods 0.000 title abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 148
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 146
- 239000010703 silicon Substances 0.000 claims abstract description 146
- 239000011521 glass Substances 0.000 claims abstract description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 17
- 238000001020 plasma etching Methods 0.000 claims description 17
- 239000002131 composite material Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000001312 dry etching Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 3
- 230000001070 adhesive effect Effects 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 abstract description 5
- 101100327917 Caenorhabditis elegans chup-1 gene Proteins 0.000 description 26
- 239000010408 film Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0156—Lithographic techniques
Abstract
The application relates to a high overload pressure sensor and a preparation method thereof, wherein the high overload pressure sensor comprises: the silicon cup, silicon boss and glass, wherein, the silicon cup silicon boss with glass arranges from top to bottom in proper order, glass respectively with the silicon cup with silicon boss anodic bonding, the lower surface of silicon cup the upper surface of silicon boss with be formed with the vacuum clearance between the upper surface of glass, the upper surface of silicon cup is provided with four piezo-resistors, four the piezo-resistor constitutes the wheatstone bridge. According to the high overload pressure sensor and the preparation method thereof, the overload resistance of the pressure sensor can be effectively increased by designing the structure of the pressure sensor, the stability and reliability of the sensor are increased, and the provided high overload pressure sensor chip is simple in structure, low in cost and wide in development prospect.
Description
Technical Field
The application relates to the field of pressure sensors, in particular to a high overload pressure sensor and a preparation method thereof.
Background
With the development of the emerging manufacturing industry in China, the requirement for precise measurement is increasingly increased, and a plurality of new measurement requirements and measurement requirements are generated, so that the sensor is developed towards miniaturization, integration and intellectualization. MEMS (micro electro mechanical systems) mainly comprises a micro mechanism, a micro sensor, a micro actuator, a corresponding processing circuit and the like, and is a high-tech leading-edge discipline developed on the basis of combining various micro processing technologies and applying the latest achievements of modern information technologies. The leading products in the MEMS market at present are pressure sensors, accelerometers, micro gyroscopes, silicon microphones, hard disk drive heads and the like, and one of the reasons for the trend is that MEMS devices are tiny in size, low in cost and capable of being manufactured in batch production, and the other reason is that novel semiconductor materials, novel sensor structures are continuously emerging and MEMS processing technologies are continuously broken through.
Along with the development and improvement of semiconductor technology, pressure sensors have been widely used as main branches of sensors in various fields such as industry, medical treatment, petrochemical industry, national defense, and the like. MEMS pressure sensors can be classified into strain type, capacitance type, piezoresistive type and resonance type according to principle, wherein the piezoresistive type pressure sensor is widely applied due to the advantages of high sensitivity, low cost, fast response speed, good reliability, easy integration and the like. According to the piezoresistance characteristics of silicon, the MEMS piezoresistance type pressure sensor is characterized in that a thin film piezoresistor is formed on a silicon substrate, the piezoresistor is connected into a Wheatstone bridge, when the sensor is stressed, the resistance changes, and an electric signal output proportional to the pressure change can be obtained through a detection circuit.
When the pressure sensor is applied to severe environments such as aerospace, petrochemical industry, marine science and the like, the sensor needs to work in a high overload environment. The common pressure sensor has poor overload resistance, and can cause wafer collapse, piezoresistance structure failure and the like after being in a high overload environment for a long time. In general, a pressure sensor needs to work in a specified range, but in special cases, such as application in the fields of aerospace, petrochemical industry, marine science and the like, the sensor needs to work in a high overload environment. To meet this requirement, the pressure sensor must have a certain overload resistance in the design and manufacturing stage. In the actual testing process of the pressure sensor, the condition that the applied pressure exceeds the measuring range of the sensor possibly occurs, and in order to avoid the damage of the pressure sensor caused by misoperation and other reasons, the pressure sensor is required to have certain overload resistance. But the overload resistance of existing pressure sensors is weak.
Disclosure of Invention
In order to solve the technical problems described above or at least partially solve the technical problems described above, the present application provides a high overload pressure sensor and a method for manufacturing the same.
In a first aspect, the present application provides a high overload pressure sensor comprising: the silicon cup, silicon boss and glass, wherein, the silicon cup silicon boss with glass arranges from top to bottom in proper order, glass respectively with the silicon cup with silicon boss anodic bonding, the lower surface of silicon cup the upper surface of silicon boss with be formed with the vacuum clearance between the upper surface of glass, the upper surface of silicon cup is provided with four piezo-resistors, four the piezo-resistor constitutes the wheatstone bridge.
Preferably, the silicon cup is of a C-shaped structure.
Preferably, the outgoing electrode of the wheatstone bridge is an aluminum electrode.
Preferably, the centre of the wheatstone bridge coincides with the centre of the silicon cup.
In a second aspect, the present application provides a method for manufacturing a high overload pressure sensor, the high overload pressure sensor including a high overload pressure sensor as described in any one of the above, the method including the steps of:
bonding the silicon wafer and the glass to obtain a composite structure;
preparing a silicon boss on the silicon wafer;
preparing a piezoresistor on the upper surface of the SOI sheet;
preparing a silicon cup by using the SOI wafer;
bonding the composite structure and the silicon cup.
Preferably, the bonding the silicon wafer and the glass and obtaining the composite structure comprises the steps of:
preparing silicon chips and glass;
cleaning the silicon wafer and the glass;
and carrying out anodic bonding on the silicon wafer and the glass.
Preferably, the preparing the silicon boss on the silicon wafer comprises the steps of:
a silicon nitride film is deposited on the upper surface of the silicon wafer by low-pressure chemical vapor deposition;
spin coating and photoetching the upper surface of the silicon wafer to obtain a silicon boss pattern;
using photoresist as a mask and removing the aluminum nitride film outside the silicon boss by utilizing reactive ion etching;
forming a silicon boss by wet etching;
and removing the aluminum nitride film on the surface of the silicon boss by dry etching.
Preferably, the preparation of the piezoresistor on the upper surface of the SOI wafer comprises the steps of:
cleaning the SOI sheet and spin-coating the upper layer of the SOI sheet;
photoetching a piezoresistor pattern on the adhesive;
etching silicon by using the photoresist as a mask and using RIE technique until the silicon dioxide layer stops;
and removing the photoresist to obtain four piezoresistors.
Preferably, the preparing a silicon cup using the SOI wafer comprises the steps of:
depositing silicon nitride on the lower surface of the SOI sheet by LPCVD technology;
removing the aluminum nitride film of the cavity part to be etched on the lower surface by using the photoresist as a mask and utilizing the RIE technology;
removing the photoresist after etching is finished;
wet etching is carried out on the lower surface of the SOI sheet to obtain a silicon cup;
and carrying out dry etching on the lower surface of the SOI sheet and removing residual silicon nitride.
Preferably, said bonding said composite structure and said silicon cup comprises the steps of:
anodic bonding is carried out on the composite structure and the silicon cup, and a basic structure is obtained;
spin coating is performed on the upper surface of the foundation structure;
etching the lead holes by using the photoresist as a mask and using an RIE technique;
removing the photoresist after etching;
and photoetching an aluminum electrode on the piezoresistor of the base structure.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
aiming at the defects of poor overload resistance, poor reliability, easy damage, poor E-type cup structural stability, low sensitivity and the like in the measurement of a common pressure sensor, the high overload pressure sensor and the preparation method thereof provided by the embodiment of the application face the application requirement of a special scene, the structure of the pressure sensor is designed, so that the overload resistance of the pressure sensor can be effectively increased, the stability and the reliability of the sensor are increased, and the provided high overload pressure sensor chip is simple in structure, low in cost and wide in development prospect.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic structural diagram of a high overload pressure sensor according to an embodiment of the present application;
FIG. 2 is a schematic circuit diagram of a Wheatstone bridge in a high overload pressure sensor according to an embodiment of the present application;
FIG. 3 is a schematic diagram illustrating a preparation state of a high overload pressure sensor according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a preparation state of a high overload pressure sensor according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of a preparation state of a high overload pressure sensor according to an embodiment of the present application.
Detailed Description
For the purposes of making the objects, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions of the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is apparent that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present application based on the embodiments herein.
Fig. 1 is a schematic structural diagram of a high overload pressure sensor according to an embodiment of the present application.
The application provides a high overload pressure sensor, comprising: the silicon cup 1, the silicon boss 2 and the glass 4, wherein the silicon cup 1, the silicon boss 2 and the glass 4 are sequentially arranged from top to bottom, the glass 4 is respectively bonded with the silicon cup 1 and the silicon boss 2 in an anode mode, a vacuum gap 3 is formed between the lower surface of the silicon cup 1, the upper surface of the silicon boss 2 and the upper surface of the glass 4, four piezoresistors 5 are arranged on the upper surface of the silicon cup 1, and the four piezoresistors 5 form a Wheatstone bridge.
Specifically, the high overload pressure sensor is composed of a silicon cup 1, a silicon boss 2 and glass 4 from top to bottom: the first layer silicon cup 1 is made of SOI (silicon on insulator) sheet through a series of processes, four piezoresistors are distributed on a membrane on the upper surface of the silicon cup 1, and the four piezoresistors form a Wheatstone bridge. When the diaphragm is deformed under pressure, the four piezoresistors are deformed, the resistance value of the resistor is changed, and the Wheatstone bridge formed by the four piezoresistors converts a pressure signal into an electric signal; the second layer of silicon boss 2 is directly bonded with the glass 4, a tiny gap is formed between the upper surface of the silicon boss 2 and the silicon cup 1, when the sensor chip is in a working state, the membrane on the upper surface of the silicon cup 1 can be slightly deformed under the action of micro pressure, the gap between the silicon cup 1 and the silicon boss 2 can provide a free movable space for the membrane, and the membrane is not contacted with the silicon boss 2 at the moment; when the external pressure is overlarge, the diaphragm gradually contacts with the silicon boss 2, and the pressure born by the diaphragm is dispersed to the silicon boss 2, so that the stress born by the piezoresistor is effectively reduced, and the overload resistance effect is achieved; the glass 4 of the third layer is respectively bonded with the silicon cup 1 and the silicon boss 2 in an anode mode, the glass 4 can isolate a substrate, the structure of the silicon cup 1 is protected, and the bonding stress is reduced.
In the embodiment of the present application, the silicon cup 1 has a C-shaped structure.
Specifically, the silicon cup 1 is manufactured by a wet etching process, and the silicon cup 1 with the C-shaped structure can completely cover the silicon boss 2.
In the embodiment of the application, the lead-out electrode of the wheatstone bridge is an aluminum electrode.
Specifically, the piezoresistor 5 used by the Wheatstone bridge is made of silicon material, the sizes and the shapes of the four resistors are completely consistent, and the lead-out electrode is an aluminum electrode.
In the present embodiment, the center of the wheatstone bridge coincides with the center of the silicon cup 1.
In particular, to ensure a balanced stress of the wheatstone bridge, four resistor positions of the wheatstone bridge need to be arranged at the stress concentration of the diaphragm of the silicon cup 1, and at this time, the center of the wheatstone bridge coincides with the center of the silicon cup 1.
In an embodiment of the present application, there is provided a method for manufacturing a high overload pressure sensor, where the high overload pressure sensor includes a high overload pressure sensor as described above, and the method includes the steps of:
s1: bonding the silicon wafer 10 and the glass 4 to obtain a composite structure;
in this embodiment, the bonding the silicon wafer 10 and the glass 4 to obtain the composite structure includes the steps of:
preparing a silicon wafer 10 and glass 4;
cleaning the silicon wafer 10 and the glass 4;
the silicon wafer 10 and the glass 4 are subjected to anodic bonding.
In particular, in order to ensure clean surface of the silicon wafer 10 bonded to the glass 4, the silicon wafer 10 and the glass 4 need to be cleaned first, and then the silicon wafer 10 and the glass 4 are bonded by anode as in fig. 3 after the cleaning is finished.
S2: preparing a silicon boss 2 on the silicon wafer 10;
in this embodiment, the preparation of the silicon pad 2 on the silicon wafer 10 includes the steps of:
a silicon nitride film 6 is deposited on the upper surface of the silicon wafer 10 by low-pressure chemical vapor deposition;
spin coating and photoetching are carried out on the upper surface of the silicon wafer 10 to obtain a silicon boss 2 pattern;
using photoresist as a mask and removing the aluminum nitride film outside the silicon boss 2 by utilizing reactive ion etching;
forming a silicon boss 2 by wet etching;
and removing the aluminum nitride film on the surface of the silicon boss 2 by dry etching.
As shown in fig. 3, specifically, when preparing the silicon boss 2 on the silicon wafer 10, firstly, a silicon nitride film 6 is deposited on the upper surface of the silicon wafer 10 by Low Pressure Chemical Vapor Deposition (LPCVD), a silicon boss pattern is obtained by photoresist on the upper surface of the silicon wafer 10, photoresist is used as a mask, an aluminum nitride film outside the silicon boss is removed by Reactive Ion Etching (RIE), the silicon boss is formed by wet etching, a KOH solution is used as a wet etching etchant, and the aluminum nitride film 6 on the surface of the silicon boss is removed by dry etching.
S3: preparing a piezoresistor 5 on the upper surface of the SOI sheet 7;
in this embodiment, the preparation of the varistor 5 on the upper surface of the SOI wafer 7 includes the steps of:
cleaning the SOI sheet 7 and spin-coating the upper layer of the SOI sheet;
photoetching a piezoresistor 5 pattern on the adhesive;
etching silicon by using the photoresist as a mask and using RIE technique until the silicon dioxide layer stops;
the photoresist is removed and four piezoresistors 5 are obtained.
As shown in fig. 4, specifically, when preparing the piezoresistor 5 on the upper surface of the SOI wafer 7, firstly cleaning the SOI wafer 7, spin-coating the upper layer of the SOI wafer 7, photoetching the piezoresistor pattern, then using the photoresist as a mask, etching silicon to the silicon dioxide layer 7 by using RIE technology, stopping, and removing the photoresist to obtain four piezoresistors 5.
S4: preparing a silicon cup 1 by using the SOI wafer 7;
in the embodiment of the present application, the preparation of the silicon cup 1 by using the SOI wafer 7 includes the steps of:
depositing silicon nitride on the lower surface of the SOI wafer 7 by LPCVD technique;
removing the aluminum nitride film of the cavity part to be etched on the lower surface by using the photoresist as a mask and utilizing the RIE technology;
removing the photoresist after etching is finished;
wet etching is carried out on the lower surface of the SOI sheet 7 to obtain a silicon cup 1;
the lower surface of the SOI wafer 7 is dry etched and the remaining silicon nitride is removed.
As shown in fig. 4, specifically, when the SOI wafer 7 obtained in step S3 is used to prepare the silicon cup 1, silicon nitride is deposited on the lower surface of the SOI wafer 7 by an LPCVD technique, photoresist is used as a mask, an aluminum nitride film of a cavity portion to be etched on the lower surface is removed by an RIE technique, the photoresist is removed after etching is finished, wet etching is performed on the lower surface of the SOI wafer 7, and a KOH solution is used as an etching solution to obtain the silicon cup; the lower surface of the SOI wafer 7 is dry etched to remove the remaining silicon nitride.
S5: bonding the composite structure and the silicon cup 1.
In an embodiment of the present application, the bonding the composite structure and the silicon cup 1 comprises the steps of:
anodic bonding is carried out on the composite structure and the silicon cup 1, so that a basic structure is obtained;
spin coating is performed on the upper surface of the foundation structure;
etching the lead holes by using the photoresist as a mask and using an RIE technique;
removing the photoresist after etching;
an aluminium electrode 9 is lithographically formed on the varistor 5 of the basic structure.
As shown in fig. 5, specifically, the composite structure obtained in the step S1 and the silicon cup obtained in the step S4 are subjected to anodic bonding to obtain a basic structure of the pressure sensor chip; spin coating is performed on the upper surface of the bonded basic structure, photoresist is used as a mask, a RIE technology is used for etching the lead holes 8, and the photoresist is removed after etching; the aluminum electrode 9 is obtained by photolithography, and the metal aluminum is used for forming metal interconnection and bonding pads between polysilicon piezoresistors and sealing the lead holes as a sealing material.
Aiming at the defects of poor overload resistance, poor reliability, easy damage, poor E-type cup structural stability, low sensitivity and the like in the measurement of a common pressure sensor, the high overload pressure sensor and the preparation method thereof provided by the embodiment of the application face the application requirement of a special scene, the structure of the pressure sensor is designed, so that the overload resistance of the pressure sensor can be effectively increased, the stability and the reliability of the sensor are increased, and the provided high overload pressure sensor chip is simple in structure, low in cost and wide in development prospect.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing is only a specific embodiment of the invention to enable those skilled in the art to understand or practice the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A high overload pressure sensor, comprising: the silicon cup, silicon boss and glass, wherein, the silicon cup silicon boss with glass arranges from top to bottom in proper order, glass respectively with the silicon cup with silicon boss anodic bonding, the lower surface of silicon cup the upper surface of silicon boss with be formed with the vacuum clearance between the upper surface of glass, the upper surface of silicon cup is provided with four piezo-resistors, four the piezo-resistor constitutes the wheatstone bridge.
2. The high overload pressure sensor of claim 1, wherein the silicon cup is of a C-type configuration.
3. The high overload pressure sensor of claim 1, wherein the lead-out electrode of the wheatstone bridge is an aluminum electrode.
4. The high overload pressure sensor of claim 1, wherein a center of the wheatstone bridge coincides with a center of the silicon cup.
5. A method of manufacturing a high overload pressure sensor, wherein the high overload pressure sensor includes a high overload pressure sensor as claimed in any one of claims 1 to 4, the method including the steps of:
bonding the silicon wafer and the glass to obtain a composite structure;
preparing a silicon boss on the silicon wafer;
preparing a piezoresistor on the upper surface of the SOI sheet;
preparing a silicon cup by using the SOI wafer;
bonding the composite structure and the silicon cup.
6. The method of manufacturing a high overload pressure sensor of claim 5, wherein the bonding the silicon wafer and the glass and obtaining the composite structure includes the steps of:
preparing silicon chips and glass;
cleaning the silicon wafer and the glass;
and carrying out anodic bonding on the silicon wafer and the glass.
7. The method of manufacturing a high overload pressure sensor of claim 5, wherein the step of manufacturing a silicon bump on the silicon wafer includes the steps of:
a silicon nitride film is deposited on the upper surface of the silicon wafer by low-pressure chemical vapor deposition;
spin coating and photoetching the upper surface of the silicon wafer to obtain a silicon boss pattern;
using photoresist as a mask and removing the aluminum nitride film outside the silicon boss by utilizing reactive ion etching;
forming a silicon boss by wet etching;
and removing the aluminum nitride film on the surface of the silicon boss by dry etching.
8. The method of manufacturing a high overload pressure sensor of claim 5, wherein the step of manufacturing a varistor on the upper surface of the SOI wafer comprises the steps of:
cleaning the SOI sheet and spin-coating the upper layer of the SOI sheet;
photoetching a piezoresistor pattern on the adhesive;
etching silicon by using the photoresist as a mask and using RIE technique until the silicon dioxide layer stops;
and removing the photoresist to obtain four piezoresistors.
9. The method of manufacturing a high overload pressure sensor of claim 5, wherein the manufacturing a silicon cup using the SOI wafer includes the steps of:
depositing silicon nitride on the lower surface of the SOI sheet by LPCVD technology;
removing the aluminum nitride film of the cavity part to be etched on the lower surface by using the photoresist as a mask and utilizing the RIE technology;
removing the photoresist after etching is finished;
wet etching is carried out on the lower surface of the SOI sheet to obtain a silicon cup;
and carrying out dry etching on the lower surface of the SOI sheet and removing residual silicon nitride.
10. The method of manufacturing a high overload pressure sensor of claim 5, wherein the bonding the composite structure and the silicon cup includes the steps of:
anodic bonding is carried out on the composite structure and the silicon cup, and a basic structure is obtained;
spin coating is performed on the upper surface of the foundation structure;
etching the lead holes by using the photoresist as a mask and using an RIE technique;
removing the photoresist after etching;
and photoetching an aluminum electrode on the piezoresistor of the base structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310249941.8A CN116399484A (en) | 2023-03-15 | 2023-03-15 | High overload pressure sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310249941.8A CN116399484A (en) | 2023-03-15 | 2023-03-15 | High overload pressure sensor and preparation method thereof |
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| Publication Number | Publication Date |
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| CN116399484A true CN116399484A (en) | 2023-07-07 |
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| CN202310249941.8A Pending CN116399484A (en) | 2023-03-15 | 2023-03-15 | High overload pressure sensor and preparation method thereof |
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- 2023-03-15 CN CN202310249941.8A patent/CN116399484A/en active Pending
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