CN116395677A - Preparation method of graphene nanoribbon - Google Patents
Preparation method of graphene nanoribbon Download PDFInfo
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- CN116395677A CN116395677A CN202310349150.2A CN202310349150A CN116395677A CN 116395677 A CN116395677 A CN 116395677A CN 202310349150 A CN202310349150 A CN 202310349150A CN 116395677 A CN116395677 A CN 116395677A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 71
- 239000002074 nanoribbon Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- 239000002994 raw material Substances 0.000 claims abstract description 16
- 230000035484 reaction time Effects 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 229910002804 graphite Inorganic materials 0.000 claims description 28
- 239000010439 graphite Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010936 titanium Substances 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 17
- 238000003723 Smelting Methods 0.000 description 12
- 238000001878 scanning electron micrograph Methods 0.000 description 12
- 239000000725 suspension Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 239000002041 carbon nanotube Substances 0.000 description 8
- 229910021393 carbon nanotube Inorganic materials 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 239000010431 corundum Substances 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 230000005672 electromagnetic field Effects 0.000 description 3
- 239000002127 nanobelt Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000002073 nanorod Substances 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2204/00—Structure or properties of graphene
- C01B2204/06—Graphene nanoribbons
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- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a preparation method of a graphene nanoribbon, which adopts Ti as a raw material 3 AlC 2 Or Ti (Ti) 2 AlC; the preparation method comprises the following steps: placing the raw materials in a closed environment; heating the raw materials; generating a magnetic field in the closed environment and ensuring that raw materials are placed in the magnetic field; stopping the magnetic field after reacting for a certain time; and cooling to obtain the graphene nanoribbon. Compared with the existing preparation method, the preparation method has the advantages of simpler production equipment, short reaction time and high production speed.
Description
Technical Field
The invention relates to the field of chemical preparation, in particular to a preparation method of graphene nanoribbons.
Background
After graphene is successfully peeled from 2004, various findings of two-dimensional materials including graphene appear successively, and simultaneously various excellent physical properties of graphene are also found successively, such as an ultrahigh thermal conductivity system, excellent mechanical properties, and ultra-fast carrier mobility. These excellent properties make graphene have a very great prospect in the field of semiconductor chips, but graphene is a zero-band-gap material and is difficult to directly apply to the semiconductor industry. The band gap of graphene can be opened by the methods of nitrogen atom doping, material compounding, preparation of graphene nanoribbons and the like, wherein the preparation of graphene nanoribbons limits the transmission of transverse carriers is a relatively direct method. The graphene nanoribbons may be classified into armchair-type graphene nanoribbons and zigzag-type graphene nanoribbons according to the structure of the edges thereof. Armchair-type graphene nanoribbons may exhibit semi-metallic or semiconducting properties depending on their width; whereas zigzag graphene nanoribbons exhibit half-metallic properties.
In recent years, as the technology of graphene nanoribbons is being studied deeply, a plurality of preparation methods of graphene nanoribbons are developed, and the preparation methods are mainly divided into two types from bottom to top and from top to bottom. The method from bottom to top mainly comprises the following steps: coupling synthesis of special organic monomers on a substrate, chemical vapor deposition on a special template (boron nitride groove and nickel nanorod), self-aligned graphene nanoribbon etching synthesis on liquid metal, and the like; the top-down method mainly comprises the steps of preparing a graphene nanoribbon by etching a carbon nanotube with plasma, metal nanoparticles and a strong oxidant, photoetching to form the graphene nanoribbon with a specific shape, and preparing the graphene nanoribbon by etching a graphene sheet.
The existing research on top-down graphene nanoribbon preparation mainly focuses on the following aspects: controlling the width of the nano belt and regulating and controlling the edge structure of the nano belt; and controlling the etching process uniformly to prepare the pure graphene nanoribbon. However, the lithographic yield is low, and there are several other methods in which the etching direction is difficult to control.
Disclosure of Invention
Aiming at the technical problems, the invention provides a method for preparing the graphene nanoribbon under simple conditions, and can realize mass preparation of the graphene nanoribbon. The graphene nanoribbon is simply synthesized by adopting a magnetic field assisted preparation method. The technical scheme of the invention is as follows:
preparation method of graphene nanoribbon, wherein raw materials adopted in the preparation method are Ti 3 AlC 2 Or Ti (Ti) 2 AlC; the preparation method comprises the following steps:
placing the raw materials in a closed environment;
heating the raw materials;
generating a magnetic field in the closed environment and ensuring that raw materials are placed in the magnetic field;
stopping the magnetic field after reacting for a certain time;
and cooling to obtain the graphene nanoribbon.
The heating treatment and the magnetic field application may be performed simultaneously, or the heating may be performed first and then the magnetic field may be applied.
Wherein the magnetic field has a field strength of 5×10 -5 T to 1T.
Wherein the Ti is 3 AlC 2 The heating temperature is 600-2000 ℃.
Wherein the reaction time is 1min to 600min. The reaction time in the present invention means a reaction time after heating to a predetermined temperature. The predetermined temperature is 600-2000 ℃.
Wherein the pressure of the closed environment is lower than 1 standard atmospheric pressure. The pressure of the closed environment is preferably close to vacuum, but it is necessary to ensure that a small amount of oxygen is present inside.
Wherein the raw materials are placed in a container with an opening, and a cover plate is adopted to cover the opening of the container during preparation; the graphene nanoribbons may be collected on a cover plate. The cover plate may be made of a material resistant to high temperatures, preferably a carbon material. In the invention, graphite paper is used for covering the opening of the container. In the technical proposal of the invention, ti 3 AlC 2 Placing in a graphite crucible, covering graphite paper on the opening of the graphite crucible, so that Ti 3 AlC 2 And a certain distance (5-10 mm) exists between the graphene nanoribbons and the graphite paper, and the collected graphene nanoribbons are transported to the graphite paper under the action of a magnetic field.
Wherein the container is made of an electrically and magnetically conductive material.
Wherein the container is made of graphite.
The invention uses Ti 3 AlC 2 Or Ti (Ti) 2 AlC is used as raw material to make Ti 3 AlC 2 Or Ti (Ti) 2 AlC is under the dual effects of high temperature and magnetic field. Layered material Ti 3 AlC 2 Or Ti (Ti) 2 The interaction of the Al layer in AlC is weaker than that of Ti and C layers, and the Al layer is easier to separate. A large amount of Al is extracted from Ti under the action of magnetic field 3 AlC 2 Or Ti (Ti) 2 Separating AlC from the liquid crystal and forming a nanowire structure under the action of a magnetic field; carbon nanoThe rice tube grows on the surface of the aluminum wire in a nucleation mode; and the temperature is continuously increased along with the time, titanium carbide formed after aluminum separation forms titanium dioxide in a weak oxygen environment to carry out axial etching on the carbon nano tube, and the graphene nanoribbon is formed. Thus Ti is 3 AlC 2 Or Ti (Ti) 2 AlC is required to provide not only a catalyst required by the growth of precursor carbon nanotubes, but also an etchant TiO required by etching the carbon nanotubes to generate graphene nanoribbons 2 Plays multiple roles in the formation process of the graphene nanoribbons.
There are various methods for generating a magnetic field in a closed environment, for example, an electromagnetic field can be generated by a current, and a magnetic field can be generated by a magnet.
The beneficial effects of the invention are as follows:
(1) Compared with the existing preparation method, the preparation method has the advantages of simpler production equipment, short reaction time and high production speed.
(2) The graphene nanoribbon product has good crystallinity and good physical properties.
(3) The preparation method provided by the invention realizes a large number of longitudinal etches on the carbon nanotubes, and can realize macro preparation of graphene nanoribbons.
Drawings
Fig. 1 is an SEM image of graphene nanoribbons obtained in example one.
Fig. 2 is an SEM image of graphene nanoribbons obtained in example two.
Fig. 3 is an SEM image of graphene nanoribbons obtained in example three.
Fig. 4 is a Raman graph of graphene nanoribbons obtained in example three.
Fig. 5 is an SEM image of graphene nanoribbons obtained in example five.
Fig. 6 is an SEM image of the product obtained in comparative example 1.
FIG. 7 is an SEM image of the product of comparative example 2.
Detailed Description
Example 1
The present embodiment is implemented using a magnetic levitation melting furnace that uses an electric current to generate an electromagnetic field.
A method for preparing graphene nanoribbons, comprising the steps of:
(1) Accurately weigh Ti 3 AlC 2 8mg, placing in a graphite crucible, covering the graphite crucible with graphite paper, and then placing the graphite crucible in a vacuum magnetic levitation melting furnace.
(2) The reaction current 30A in the coil of the vacuum magnetic suspension smelting furnace is set, the reaction time is set to be 2min, and the magnetic field intensity generated at the moment is about 284mT at the maximum.
(3) The vacuum magnetic suspension smelting furnace is cleaned by argon for more than three times, the air pressure in the furnace is kept at 5kPa, and the reaction is started.
(4) After the reaction is finished, cooling along with a furnace to obtain a few-layer (3-5 layers) graphene nanoribbon.
Fig. 1 is an SEM image of the first embodiment. As can be seen from fig. 1, the formation is that the graphene nanoribbons possess a nearly transparent morphology, which suggests that the thickness of the samples is so thin that it is difficult to accurately measure their values.
The embodiment uses Ti 3 AlC 2 The graphite crucible is used as a heating source, the characteristics of rapidly heating graphite by using a magnetic field are utilized, the magnetic field is applied to the graphite crucible, and meanwhile, induction current generated by the magnetic field is ensured to heat the graphite crucible; at the moment, the electromagnetic field and the induced current heat the graphite crucible to a red-hot state; an electric current is formed in the graphite crucible heated to a red-hot state to cause Ti to be 3 AlC 2 Or Ti (Ti) 2 AlC is under the dual effects of high temperature and magnetic field. A large amount of Al is extracted from Ti under the action of magnetic field 3 AlC 2 Or Ti (Ti) 2 Separating AlC from the liquid crystal and forming a nanowire structure under the action of a magnetic field; the carbon nano tube grows on the surface of the aluminum wire in a nucleation mode; and then the temperature is continuously increased along with time, ti is separated from the compound to form titanium dioxide in a weak oxygen environment to carry out axial etching on the carbon nano tube, so that the graphene nano belt is formed.
Example two
(1) Accurately weigh Ti 3 AlC 2 8mg, placed in a graphite crucible and covered on the graphite crucible with graphite paperAnd then placing the graphite crucible into a vacuum magnetic suspension smelting furnace.
(2) Setting the reaction current 30A in the coil of the vacuum magnetic suspension smelting furnace, setting the reaction time to be 3min, and generating the magnetic field intensity to be 284mT at the maximum.
(3) Cleaning the vacuum magnetic suspension smelting furnace for more than three times by using argon, keeping the pressure in the furnace to be 4KPa, and starting the reaction;
(4) And after the reaction is finished, opening a hearth to cool, and obtaining the graphene nanoribbon.
Fig. 2 is an SEM image of example two. As can be seen from fig. 2, the resulting graphene nanoribbons exhibit distinct edges due to etching. Meanwhile, the thickness of the prepared graphene nanoribbon is very thin.
Example III
(1) Respectively accurately weigh Ti 3 AlC 2 10mg, placed in a graphite crucible; and then placing the graphite crucible into a vacuum magnetic suspension smelting furnace.
(2) Setting a reaction current 29A in a coil of the vacuum magnetic suspension smelting furnace, and setting a reaction time to be 4min.
(3) And cleaning the vacuum magnetic suspension smelting furnace for more than three times by using argon, keeping the pressure in the furnace to be 1KPa, and starting the reaction.
(4) And after the reaction is finished, opening a hearth to cool, and obtaining the graphene nanoribbon.
Fig. 3 is an SEM image of example three. As can be seen from fig. 3, the two edges of the resulting graphene nanoribbons are curled. At the same time, the thickness is very thin, and things behind the nanoribbon can be observed through the nanoribbon. Fig. 4 is a Raman image of example three, the main characteristic peaks of the sample are consistent with the peaks of graphene nanoribbons, and the D, G and 2D peaks clearly show that the prepared strips are composed of graphene.
Example IV
(1) Respectively accurately weigh Ti 3 AlC 2 10mg, placed in a graphite crucible; and then placing the graphite crucible into a corundum crucible and placing the corundum crucible into a vacuum magnetic suspension smelting furnace.
(2) Setting the reaction current 35A in the coil of the vacuum magnetic suspension smelting furnace, and setting the reaction time to be 3min. (3) keeping the pressure in the furnace at 1KPa, and starting the reaction;
(4) And after the reaction is finished, cooling to obtain the few-layer graphene nanoribbon.
Example five
(1) Respectively accurately weigh Ti 2 10mg of AlC, and placing in a graphite crucible; and then placing the graphite crucible into a corundum crucible and placing the corundum crucible into a vacuum magnetic suspension smelting furnace.
(2) Setting the reaction current 30A in the coil of the vacuum magnetic suspension smelting furnace, and setting the reaction time to be 10min. (3) keeping the pressure in the furnace at 1KPa, and starting the reaction;
(4) And after the reaction is finished, cooling to obtain the graphene nanoribbon.
Fig. 5 is an SEM image of example five. As can be seen from fig. 5, the two edges of the prepared graphene nanoribbons are very obvious. Meanwhile, white TiO at the end part of the graphene nanoribbon 2 The presence of the particles also illustrates that etching occurs with graphene nanoribbons being generated.
Comparative example 1
The raw material adopted in the comparative example is Mo 2 Ga 2 And C, the operation steps are the same as those of the first embodiment.
SEM images of the products obtained from the reaction are shown in fig. 6. As can be seen from fig. 6, the prepared graphene film encapsulates the gallium particle sample, wherein no graphene nanoribbon is formed, and no one-dimensional strip-like structure is observed. In contrast to the results obtained in fig. 1, graphene does not form a graphene nanoribbon structure, mainly due to the fact that Ga used for catalysis does not form a one-dimensional structure. At the same time, FIG. 6 also does not contain TiO 2 And generating to etch the graphene.
Comparative example 2
The raw material adopted in the comparative example is Ti 3 SiC 2 The procedure was the same as in example one.
SEM images of the products obtained from the reaction are shown in fig. 7. As can be seen from FIG. 7, some Si nanorods were obtained in this comparative example, and the shape of the graphene film was hardly observed on the surface of the nanorodsThis is because the ability of silicon to form graphene is weak. At the same time, no TiO is observed in FIG. 7 2 Particle formation, therefore, no etchant TiO is generated even with carbon nanotubes 2 Which is etched to produce graphene nanoribbons.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the protection scope of the present invention is subject to the claims.
Claims (8)
1. A preparation method of graphene nanoribbons is characterized in that the raw material adopted by the preparation method is Ti 3 AlC 2 Or Ti (Ti) 2 AlC; the preparation method comprises the following steps:
placing the raw materials in a closed environment;
heating the raw materials;
generating a magnetic field in the closed environment and ensuring that raw materials are placed in the magnetic field;
stopping the magnetic field after reacting for a certain time;
and cooling to obtain the graphene nanoribbon.
2. The method of claim 1, wherein the magnetic field has a magnetic field strength of 5 x 10 -5 T to 1T.
3. The method according to claim 1, wherein the Ti 3 AlC 2 The heating temperature is 600-2000 ℃.
4. The method of claim 1, wherein the reaction time is from 1min to 600min.
5. The method of claim 1, wherein the pressure of the enclosed environment is less than 1 standard atmosphere.
6. The method of claim 1, wherein the feedstock is placed in a container having an opening, and the opening of the container is covered during the preparing.
7. The method of claim 6, wherein the vessel is made of an electrically and magnetically conductive material.
8. The method of claim 7, wherein the container is made of graphite.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018187907A1 (en) * | 2017-04-10 | 2018-10-18 | 深圳市佩成科技有限责任公司 | Ti3c2tx/sba-15 type hierarchical sulfur-carbon composite material |
| KR20220029821A (en) * | 2020-08-28 | 2022-03-10 | 주식회사 데브 | Electromagnetic shielding material comprising malic acid grafted polypropylene, graphene oxide and glass fiber coated with graphene oxide and MAXene |
| CN114455634A (en) * | 2022-01-21 | 2022-05-10 | 四川大学 | Preparation method of molybdenum disulfide nanosheet |
| CN115092910A (en) * | 2022-06-17 | 2022-09-23 | 山东高速材料技术开发集团有限公司 | Method for preparing MXene-graphite ring stacked carbon nanotubes by low-temperature vacuum CVD (chemical vapor deposition) |
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2023
- 2023-04-04 CN CN202310349150.2A patent/CN116395677A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018187907A1 (en) * | 2017-04-10 | 2018-10-18 | 深圳市佩成科技有限责任公司 | Ti3c2tx/sba-15 type hierarchical sulfur-carbon composite material |
| KR20220029821A (en) * | 2020-08-28 | 2022-03-10 | 주식회사 데브 | Electromagnetic shielding material comprising malic acid grafted polypropylene, graphene oxide and glass fiber coated with graphene oxide and MAXene |
| CN114455634A (en) * | 2022-01-21 | 2022-05-10 | 四川大学 | Preparation method of molybdenum disulfide nanosheet |
| CN115092910A (en) * | 2022-06-17 | 2022-09-23 | 山东高速材料技术开发集团有限公司 | Method for preparing MXene-graphite ring stacked carbon nanotubes by low-temperature vacuum CVD (chemical vapor deposition) |
Non-Patent Citations (1)
| Title |
|---|
| JINHONG HOU ET AL.: "Tailoring carbon nanotubes quickly into graphene nanoribbons along axis-direction via dynamic magnetic flux template", CARBON, vol. 208, 29 March 2023 (2023-03-29), pages 338 - 344 * |
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