CN116394155A - Polishing head, final polishing apparatus, and final polishing method - Google Patents

Polishing head, final polishing apparatus, and final polishing method Download PDF

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Publication number
CN116394155A
CN116394155A CN202310342661.1A CN202310342661A CN116394155A CN 116394155 A CN116394155 A CN 116394155A CN 202310342661 A CN202310342661 A CN 202310342661A CN 116394155 A CN116394155 A CN 116394155A
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CN
China
Prior art keywords
silicon wafer
temperature
polishing
temperature control
control ring
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310342661.1A
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Chinese (zh)
Inventor
贺云鹏
王贺
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Xian Eswin Material Technology Co Ltd
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Xian Eswin Material Technology Co Ltd
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Filing date
Publication date
Application filed by Xian Eswin Material Technology Co Ltd filed Critical Xian Eswin Material Technology Co Ltd
Priority to CN202310342661.1A priority Critical patent/CN116394155A/en
Publication of CN116394155A publication Critical patent/CN116394155A/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/12—Lapping plates for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/015—Temperature control
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B24B37/32—Retaining rings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/04—Headstocks; Working-spindles; Features relating thereto
    • B24B41/047—Grinding heads for working on plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/02—Equipment for cooling the grinding surfaces, e.g. devices for feeding coolant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present disclosure relates to a polishing head, a final polishing apparatus, and a final polishing method, the polishing head including: a holding module having opposite first and second surfaces and for holding a silicon wafer to be polished at the first surface; and a temperature control ring disposed at the second surface of the holding module and configured to control a central axis of the ring to coincide with a central axis of the silicon wafer when the silicon wafer is held at the first surface, for enabling a temperature of an edge of the silicon wafer to be lower than a temperature of a center of the silicon wafer during polishing by passing a temperature control fluid through the temperature control ring. By the polishing head, the final polishing device and the final polishing method, the improvement of the surface flatness of the silicon wafer is realized.

Description

Polishing head, final polishing apparatus, and final polishing method
Technical Field
The present disclosure relates to the field of semiconductor processing and manufacturing technology, and in particular, to a polishing head, a final polishing apparatus, and a final polishing method.
Background
With the continuous development of semiconductor technology, the requirement on flatness as an important evaluation factor for silicon wafer quality is higher and higher. In general, improvement of flatness can be achieved by means of a double-sided polishing process and a final polishing process in sequence.
In the final polishing process of polishing only the front surface of the silicon wafer, the silicon wafer is brought into face-to-face contact with the polishing pad by, for example, a polishing head having an adsorption function, so that the rotating polishing pad can act on, for example, the front surface of the silicon wafer which is also in rotation, thereby achieving polishing of the front surface of the silicon wafer.
However, during polishing, the polishing liquid tends to move toward and easily accumulate at the edge of the silicon wafer due to centrifugal force generated by rotation of the silicon wafer after contact with the silicon wafer, and the accumulation of the polishing liquid at the edge of the silicon wafer in turn causes a larger polishing amount to be applied to the edge of the silicon wafer than to the center of the silicon wafer, thereby thinning the thickness of the edge of the silicon wafer than to the center of the silicon wafer and thus deteriorating the surface flatness of the silicon wafer. In addition, when the silicon wafer is brought into contact with the polishing pad, the polishing pad undergoes a degree of compressive deformation at the contact region, and such deformation exerts a large effect on the outer edge of the silicon wafer near the chamfer, thereby relatively increasing polishing of the silicon wafer edge, which likewise or further causes thinning of the silicon wafer edge thickness compared to the silicon wafer center and thus deterioration of the silicon wafer surface flatness.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
The present disclosure aims to provide a polishing head capable of reducing the polishing degree of a silicon wafer edge.
To achieve the above object, according to an aspect of the present disclosure, there is provided a polishing head comprising:
a holding module having opposite first and second surfaces and for holding a silicon wafer to be polished at the first surface; and
a temperature control ring disposed at the second surface of the holding module and configured to control a central axis of the ring to coincide with a central axis of the silicon wafer when the silicon wafer is held at the first surface, for enabling a temperature of an edge of the silicon wafer to be lower than a temperature of a center of the silicon wafer during polishing by passing a temperature control fluid through the temperature control ring.
In the polishing head described above, the temperature control ring may be provided at a position of the second surface corresponding to an edge of the silicon wafer held at the first surface.
In the polishing head described above, the temperature control ring may be a plurality of concentric rings capable of controlling temperature independently of each other.
In the polishing head described above, the temperature control ring may be made of a ceramic material.
In the polishing head described above, the temperature control ring may be an integral annular portion that is integrated into the second surface of the holding module.
In the polishing head described above, the temperature-controlling fluid may be cooling air, cooling water, or cooling oil.
In the polishing head described above, the temperature of the temperature control ring can be controlled by adjusting the temperature and/or flow rate of the temperature control fluid.
In the polishing head described above, the holding module may be made of a plastic material or a ceramic material.
According to another aspect of the present disclosure, there is provided a final polishing apparatus comprising a polishing head according to any one of the preceding paragraphs.
According to still another aspect of the present disclosure, there is provided a final polishing method performed using the final polishing apparatus according to the preceding paragraph, the final polishing method comprising:
during polishing, the temperature of the edge of the silicon wafer is lower than the temperature of the center of the silicon wafer by introducing temperature-control fluid into the temperature-control ring.
According to the present disclosure, by providing temperature control rings and disposing the temperature control rings on opposite surfaces of a holding module, respectively, with the central axis thereof coinciding with the central axis of the silicon wafer when held, so that the temperature of the edge of the silicon wafer is lower than the temperature of the center of the silicon wafer during polishing by introducing a temperature control fluid into the temperature control rings, the polishing liquid acting on the edge of the silicon wafer is made to be lower than the polishing liquid acting on the center of the silicon wafer, thereby relatively reducing the polishing ability of the polishing liquid acting on the edge of the silicon wafer, so that the polishing degree of the edge of the silicon wafer is reduced, thereby reducing the difference between the polishing degree of the edge of the silicon wafer and the center of the silicon wafer, and thus improving the flatness of the surface of the silicon wafer.
The above features and advantages and other features and advantages of the present disclosure will be more apparent from the following detailed description of exemplary embodiments thereof in connection with the accompanying drawings.
Drawings
FIG. 1 is a plan view of a polishing head according to an embodiment of the present disclosure;
FIG. 2 is a top view of a temperature control ring according to an embodiment of the present disclosure; and
fig. 3 is a top view of a temperature control ring according to another embodiment of the present disclosure.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is noted that the following detailed description of the present disclosure is for purposes of illustration only and is in no way limiting of the present disclosure.
As mentioned earlier, during polishing, both the polishing pad and the silicon wafer are rotated, for example, in the same direction, whereby the polishing liquid tends to move toward the edge of the silicon wafer due to the centrifugal force generated by the rotation of the silicon wafer after contact with the silicon wafer and tends to accumulate at the edge, resulting in a greater degree of polishing of the edge of the silicon wafer than the center of the silicon wafer; in addition, the polishing pad exerts a large effect on the outer edge of the silicon wafer near the chamfer due to plastic deformation when in contact with the silicon wafer, and also causes the polishing degree of the edge of the silicon wafer to be larger than that of the center of the silicon wafer, thereby deteriorating the flatness of the surface of the silicon wafer.
In order to solve the above problems, it is necessary to eliminate or at least reduce the difference between the polishing degree of the edge of the silicon wafer and the polishing degree of the center of the silicon wafer.
To this end, according to an aspect of the present disclosure, there is provided a polishing head 1, referring to fig. 1 to 3, comprising:
a holding module 11 having opposite first and second surfaces 111 and 112 and for holding the silicon wafer 10 to be polished at the first surface 111; and
a temperature control ring 12 is provided at the second surface 112 of the holding module 11 and is arranged such that the central axis of the control ring 12 coincides with the central axis of the silicon wafer 10 when the silicon wafer 10 is held at the first surface 111 for enabling the temperature of the edge of the silicon wafer 10 to be lower than the temperature of the center of the silicon wafer 10 during polishing by passing a temperature control fluid in the temperature control ring 12.
Specifically, as shown in fig. 1, the polishing head 1 may include a head main body 13, a rotation driving member 14 connected to one end of the head main body 13, a holding module 11 connected to the other end of the head main body 13, and an assembly module 15 for holding the silicon wafer 10 to be polished together with the holding module 11.
When polishing is performed, the rotation driving member 14 drives the head main body 13 to rotate to drive the holding module 11 and the silicon wafer 10 held thereby to rotate, so that polishing of the silicon wafer 10 is achieved by the polishing pad and the polishing liquid distributed thereon when the polishing head 1 presses the silicon wafer 10 against a rotating polishing pad (not shown) disposed under the polishing head 1.
In the embodiment of the present disclosure, the temperature control ring 12 and the silicon wafer 10 are disposed on opposite surfaces of the holding module 11, i.e., the first surface 111 and the second surface 112 (shown as opposite outer and inner surfaces in fig. 1), respectively, such that when a temperature control fluid is introduced into the temperature control ring 12 itself disposed at the second surface 112, the temperature control fluid changes the temperature of the position of the second surface 112 of the holding module 11 corresponding to the temperature control ring 12 via the temperature control ring 12 and thereby changes the temperature of the position of the first surface 111 corresponding to the position, thereby changing the temperature of the portion of the silicon wafer 10 held at the first surface 111 corresponding to the position. Moreover, the central axis of the temperature control ring 12 is arranged to coincide with the central axis of the silicon wafer 10 when held, for example, more specifically adsorbed, so that the temperature control ring 12 can exert a temperature changing effect on the annular region of the silicon wafer 10 centered at the center thereof.
In this way, the temperature control ring 12 may be configured to lower the temperature of the edge of the silicon wafer 10, or raise the temperature of the center of the silicon wafer 10, or both lower the temperature of the edge and center of the silicon wafer 10 but lower the temperature of the edge more, or both raise the temperature of the edge and center of the silicon wafer 10 but raise the temperature of the center more, or the like to lower the temperature of the edge of the silicon wafer than the temperature of the center of the silicon wafer.
In this case, since the polishing liquid is in contact with the silicon wafer during polishing, the temperature of the polishing liquid acting on the edge of the silicon wafer 10 is also lower than the temperature of the polishing liquid acting on the center of the silicon wafer 10, which relatively reduces the polishing ability of the polishing liquid acting on the edge of the silicon wafer 10, so that the degree of polishing of the edge of the silicon wafer 10 is relatively reduced, whereby the difference between the degree of polishing of the edge of the silicon wafer and the center of the silicon wafer can be reduced, thereby improving the flatness of the surface of the silicon wafer.
As shown in fig. 1 and 2, the temperature control ring 12 has a fluid inlet 121 and a fluid outlet 122, the fluid inlet 121 and the fluid outlet 122 are connected to a fluid inlet pipe 121 'and a fluid outlet pipe 122' (in fig. 1, the fluid outlet pipe 122 'is not visible due to being shielded by the fluid inlet pipe 121'), and the temperature control fluid supply and recovery unit supplies a temperature control fluid into the temperature control ring 12 through the fluid inlet pipe 121 'and recovers the temperature control fluid from the temperature control ring 12 through the fluid outlet pipe 122'.
As described previously, the temperature control ring 12 may be configured to reduce the temperature of the edge of the silicon wafer 10, such that the temperature control ring 12 may be disposed at a position of the second surface 112 corresponding to the edge of the silicon wafer 10 held at the first surface, and the temperature of the temperature control ring 12 and thus the edge of the silicon wafer 10 may be reduced by passing a temperature control fluid having a lower temperature therethrough, thereby making the edge of the silicon wafer lower in temperature than the center of the silicon wafer.
Similarly, when the temperature control ring 12 is provided to raise the temperature of the center of the silicon wafer 10, it may be provided at a position of the second surface 112 corresponding to the center of the silicon wafer held at the first surface, and the temperature of the temperature control ring 12 and thus the center of the silicon wafer 10 may be raised by passing a temperature control fluid having a higher temperature therethrough, thereby making the temperature of the edge of the silicon wafer lower than the temperature of the center of the silicon wafer. Other similar situations are not described here as they can be easily understood.
In embodiments of the present disclosure, the temperature control ring 12 may be a plurality of concentric rings capable of controlling temperature independently of each other.
As exemplarily shown in fig. 3, the plurality of concentric rings each have a respective fluid inlet and fluid outlet (each shown in dashed circles) and are not in communication with each other, thereby achieving temperature control independent of each other.
In this case, the plurality of concentric rings correspond to a plurality of annular regions of the silicon wafer 10 centered around the center thereof, and by providing the plurality of concentric rings to be capable of controlling the temperature independently of each other, the plurality of annular regions of the silicon wafer 10 can be subjected to temperature control independently of each other. For example, a relatively lower temperature is applied at the annular region of the wafer where the degree of polishing is greater, while no temperature control, or a relatively higher temperature, is applied at the annular region where the degree of polishing is less. Thereby, a more precise and flexible control of the temperature of the silicon wafer 10 can be achieved, thereby better improving the overall flatness of the silicon wafer.
In embodiments of the present disclosure, the temperature control ring 12 may be made of a ceramic material, which may reduce metal contamination in silicon wafer fabrication.
It is contemplated that the temperature control ring 12 may be a separate component independent from the holding module 11, secured to the holding module 11 only by a securing element.
However, it is also contemplated that the temperature control ring 12 may be an integral annular portion integral to the second surface 112 of the retention module 11. For example, the temperature control ring 12 may be an annular portion that is embedded in the second surface 112. In this case, the temperature can be better transferred from the temperature control fluid to the holding module 11 and thus to the silicon wafer 10, achieving a better temperature transfer effect and thus better control sensitivity and accuracy.
The temperature control fluid may be cooling air, cooling water or cooling oil. It will be appreciated that the temperature control fluid may also be any other suitable fluid capable of achieving temperature control.
In embodiments of the present disclosure, the temperature of the temperature control ring 12 can be controlled by adjusting the temperature and/or flow rate of the temperature control fluid.
It is contemplated that where the temperature control ring 12 is a plurality of concentric rings, each of the plurality of concentric rings may be vented with a different type of temperature control fluid, and that the temperature of each ring may likewise be controlled by adjusting the temperature and/or flow rate of a single type of temperature control fluid vented therein.
In embodiments of the present disclosure, the holding module 11 may be made of a plastic material or a ceramic material. The plastic material may be polyvinylidene fluoride (PVDF), polyetheretherketone (PEEK), or the like.
According to another aspect of the present disclosure, there is also provided a final polishing apparatus including the polishing head 1.
According to still another aspect of the present disclosure, there is also provided a final polishing method performed using the above final polishing apparatus, the final polishing method comprising:
during polishing, the temperature of the edge of the silicon wafer is lower than the temperature of the center of the silicon wafer by introducing temperature-control fluid into the temperature-control ring.
The foregoing is merely specific embodiments of the disclosure, but the protection scope of the disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the disclosure are intended to be covered by the protection scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims (10)

1. A polishing head, comprising:
a holding module having opposite first and second surfaces and for holding a silicon wafer to be polished at the first surface; and
a temperature control ring disposed at the second surface of the holding module and configured such that a central axis of the temperature control ring coincides with a central axis of the silicon wafer when the silicon wafer is held at the first surface for enabling a temperature of an edge of the silicon wafer to be lower than a temperature of a center of the silicon wafer during polishing by passing a temperature control fluid through the temperature control ring.
2. The polishing head as set forth in claim 1 wherein the temperature control ring is disposed at a position of the second surface corresponding to an edge of the silicon wafer held at the first surface.
3. A polishing head according to claim 1, wherein the temperature control ring is a plurality of concentric rings capable of controlling temperature independently of each other.
4. A polishing head according to any one of claims 1 to 3, wherein the temperature control ring is made of a ceramic material.
5. A polishing head according to any one of claims 1 to 3, wherein the temperature control ring is an integral annular portion integral to the second surface of the retaining module.
6. A polishing head according to any one of claims 1 to 3, wherein the temperature-controlling fluid is cooling air, cooling water or cooling oil.
7. A polishing head according to any one of claims 1 to 3, wherein the temperature of the temperature-control ring is controllable by adjusting the temperature and/or flow rate of the temperature-control fluid.
8. A polishing head according to any one of claims 1 to 3, wherein the holding module is made of a plastic material or a ceramic material.
9. A final polishing apparatus comprising the polishing head according to any one of claims 1 to 8.
10. A final-polishing method, characterized in that the final-polishing method is performed using the final-polishing apparatus according to claim 9, the final-polishing method comprising:
during the polishing process, the temperature of the edge of the silicon wafer is lower than the temperature of the center of the silicon wafer by introducing the temperature control fluid into the temperature control ring.
CN202310342661.1A 2023-03-31 2023-03-31 Polishing head, final polishing apparatus, and final polishing method Pending CN116394155A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310342661.1A CN116394155A (en) 2023-03-31 2023-03-31 Polishing head, final polishing apparatus, and final polishing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202310342661.1A CN116394155A (en) 2023-03-31 2023-03-31 Polishing head, final polishing apparatus, and final polishing method

Publications (1)

Publication Number Publication Date
CN116394155A true CN116394155A (en) 2023-07-07

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310342661.1A Pending CN116394155A (en) 2023-03-31 2023-03-31 Polishing head, final polishing apparatus, and final polishing method

Country Status (1)

Country Link
CN (1) CN116394155A (en)

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