CN116390638A - Photo-induced integrated phase-change radio frequency switch - Google Patents

Photo-induced integrated phase-change radio frequency switch Download PDF

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Publication number
CN116390638A
CN116390638A CN202310472250.4A CN202310472250A CN116390638A CN 116390638 A CN116390638 A CN 116390638A CN 202310472250 A CN202310472250 A CN 202310472250A CN 116390638 A CN116390638 A CN 116390638A
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layer
radio frequency
frequency switch
phase
lens
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Inventor
帅陈杨
郑月军
付云起
陈强
马燕利
马欣瑜
丁亮
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National University of Defense Technology
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National University of Defense Technology
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Priority to CN202310472250.4A priority Critical patent/CN116390638A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors having switching assisted by radiation or particle beam, e.g. optically controlled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4075—Beam steering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

The application belongs to the technical field of radio frequency switches, and relates to a photoinduction integrated phase-change radio frequency switch, which comprises: a plurality of lasers, a lens layer, and a passive phase change radio frequency switch; a plurality of lasers are distributed at intervals on the same plane to form a laser array; the lens layer is respectively arranged with the laser array and the passive phase-change radio frequency switch at intervals, so that outgoing laser of the laser array is emitted into the passive phase-change radio frequency switch after passing through the lens layer; the lens layer includes: a collimator lens and a focusing lens; the collimating lens is arranged between the laser array and the focusing lens, and the focusing lens is arranged between the collimating lens and the passive phase-change radio frequency switch; the area of emergent light of the focusing lens is equal to the area of the phase-change layer in the passive phase-change radio frequency switch; the collimating lens and the focusing lens are super-surface lenses; the laser array, the collimating lens, the focusing lens and the passive phase-change radio frequency switch are parallel to each other. The laser can be integrated with the passive phase-change radio frequency switch by adopting the method.

Description

Photo-induced integrated phase-change radio frequency switch
Technical Field
The application relates to the technical field of radio frequency switches, in particular to a photoinduction integrated phase-change radio frequency switch.
Background
The radio frequency switch is also called a microwave switch and is used for realizing the function of controlling the conversion of the radio frequency signal channel. In the radio frequency front end of radar, communication, electronic countermeasure systems, radio frequency switches are an indispensable key component. As the operating frequency band becomes higher, the performance of the conventional solid-state switch (PIN diode and FET) at high frequency is rapidly deteriorated, and the cost is increased by times, so that the research and development of millimeter wave and even terahertz devices are restricted and limited to a certain extent, and in order to solve the problem, the emergence of novel radio frequency switch technology is urgently required.
The phase-change radio frequency switch is used as a novel radio frequency switch technology and is expected to solve the problems existing in the current radio frequency switch. In the past few years, phase change radio frequency switches have been demonstrated to have excellent characteristics such as high isolation, low insertion loss, low parasitic capacitance, low power consumption, ultra-wideband, easy integration, etc. The phase change material is used as a core functional layer of the phase change radio frequency switch, and reversible conversion between a high-resistance phase state and a low-resistance phase state is realized by an electric excitation or photoinduction mode, so that the on-off of the radio frequency switch is realized.
In the prior art, compared with an electric excitation mode, the light-induced excitation mode can effectively reduce the complexity of the structure and improve the switching speed. For example, aurelian Crunteanu et al disclose an optically controlled GeTe phase-change RF switch capable of achieving high isolation and low insertion loss in the range of 0-67GHz (Aurelian Crunteanu, laure Huitema, jean-Christophe Orlianges, et al optical Switching of GeTe Phase Change Materials for High-Frequency Applications [ C ]. IEEE MTT-SInternational Microwave Workshop Series on Advanced Materials and Processes (IMWS-AMP), 2017).
However, although the above design realizes good high-frequency performance and fast switching, the design uses a separate ultraviolet laser source, and the excitation source and the switch are not integrated, so that the volume is huge, the cost is high, and the practicability is greatly reduced.
Disclosure of Invention
Based on the above, it is necessary to provide a photoinduction integrated phase-change radio frequency switch to solve the problem that the light-operated phase-change radio frequency switch cannot be designed integrally, so that the laser and the passive phase-change radio frequency switch can be integrated, the volume and the cost are reduced, and the practicability is greatly improved.
A photoinduced integrated phase change radio frequency switch comprising: a plurality of lasers, a lens layer, and a passive phase change radio frequency switch;
a plurality of lasers are distributed at intervals on the same plane to form a laser array;
the lens layer is respectively arranged with the laser array and the passive phase-change radio frequency switch at intervals, so that the emergent laser of the laser array is emitted into the passive phase-change radio frequency switch after passing through the lens layer.
In one embodiment, the lens layer includes: a collimator lens and a focusing lens;
the collimating lens is arranged between the laser array and the focusing lens, and the focusing lens is arranged between the collimating lens and the passive phase-change radio frequency switch.
In one embodiment, the area of the outgoing light of the focusing lens is equal to the area of the phase-change layer in the passive phase-change radio frequency switch.
In one embodiment, the collimating lens and the focusing lens are both super-surface lenses.
In one embodiment, the laser array, the collimating lens, the focusing lens, and the passive phase change radio frequency switch are parallel to one another.
In one embodiment, the passive phase-change radio frequency switch comprises, in sequence, overlapping: the device comprises a substrate layer, a heat dissipation layer, a phase change layer, an electrode layer and a passivation layer;
the passivation layer is spaced adjacent to the lens layer.
In one embodiment, the substrate layer is disposed at the bottom of the heat dissipation layer and has the same size as the heat dissipation layer;
the phase change layer is arranged at the center of the top of the heat dissipation layer, and the area of the phase change layer is smaller than that of the heat dissipation layer;
the electrode layer comprises a first part and a second part which are overlapped; the first part is sleeved on the outer side of the phase change layer, and the outer edge of the first part is parallel to the edge of the heat dissipation layer; the first portion is the same thickness as the phase change layer such that the top of the first portion and the top of the phase change layer are coplanar; the outer edge of the second part is the same as the heat dissipation layer in size, and an open accommodating cavity is formed in the center of the top of the phase change layer;
the passivation layer fills the accommodating cavity and covers the top of the electrode layer.
In one embodiment, the laser is a bottom-emitting vertical cavity surface emitting laser.
In one embodiment, the laser comprises sequentially overlapping: the semiconductor device comprises an N-type contact layer, an antireflection film, an N-type substrate, an N-type DBR, a quantum well active region, an oxidation window, a P-type DBR and a P-type contact layer;
the N-type contact layer and the antireflection film are adjacent to the lens layer interval.
In one embodiment, the laser is grown using MOCVD.
According to the photoinduction integrated phase-change radio frequency switch, the laser arrays, the lens layers and the passive phase-change radio frequency switch are arranged at intervals, and outgoing laser of the laser arrays is emitted into the passive phase-change radio frequency switch after passing through the lens layers, so that compared with the electrically-excited phase-change radio frequency switch in the prior art, the switching speed of the photoinduction integrated phase-change radio frequency switch in the application is faster, ns level can be achieved, and the isolation of the switch is further improved due to the fact that the complex design of a heater is reduced; meanwhile, the VCSELs are arranged into a two-dimensional array to improve laser power, the collimating lens is used for collimating multiple light beams, and then the focusing lens is used for converging the collimated light beams to a light spot with a proper size, the light spot can completely cover the phase-change layer, namely the area of emergent light of the focusing lens is equal to the area of the phase-change layer in the passive phase-change radio frequency switch, so that the high efficiency of laser energy is ensured, enough phase-change energy is provided for the phase-change layer, and the normal phase-change function of the phase-change switch is ensured; in addition, the integrated design of the bottom-emitting laser (namely the optical excitation source), the super-surface lens and the passive phase-change radio frequency switch can meet the switch requirement of micron level, and has the advantages of simple structure, easy integration, small volume, low cost and high practicability.
Drawings
FIG. 1 is a schematic diagram of a photoinduced integrated phase change RF switch in one embodiment;
FIG. 2 is a schematic diagram of a laser according to an embodiment, wherein the arrows indicate the direction of the light outlet;
fig. 3 is a schematic diagram of a passive phase change radio frequency switch in one embodiment.
Reference numerals:
a passive phase-change radio frequency switch 1, a focusing lens 2, a collimating lens 3, a laser 4 and a laser beam path 5;
an N-type contact layer 6, an antireflection film 7, an N-type substrate 8, an N-type DBR9, a quantum well active region 10, an oxidation window 11, a P-type DBR12 and a P-type contact layer 13;
substrate layer 14, heat dissipation layer 15, phase change layer 16, electrode layer 17, passivation layer 18.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
It should be noted that all directional indicators (such as up, down, left, right, front, and rear … …) in the embodiments of the present application are merely used to explain the relative positional relationship, movement, etc. between the components in a specific posture (as shown in the drawings), and if the specific posture is changed, the directional indicator is correspondingly changed.
In addition, descriptions such as those related to "first," "second," and the like, are provided for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated in this application. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, "plurality of sets" means at least two sets, e.g., two sets, three sets, etc., unless specifically defined otherwise.
In the present application, unless explicitly specified and limited otherwise, the terms "coupled," "secured," and the like are to be construed broadly, and for example, "secured" may be either permanently attached or removably attached, or integrally formed; the device can be mechanically connected, electrically connected, physically connected or wirelessly connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In addition, the technical solutions of the embodiments of the present application may be combined with each other, but it is necessary to be based on the fact that those skilled in the art can implement the technical solutions, and when the technical solutions are contradictory or cannot be implemented, the combination of the technical solutions should be considered to be absent, and is not within the scope of protection claimed in the present application.
The present application provides a photoinduced integrated phase change radio frequency switch, as shown in fig. 1-3, comprising, in one embodiment: a plurality of lasers 4, a lens layer and a passive phase-change radio frequency switch 1.
The plurality of lasers 4 are spaced apart on the same plane to form a two-dimensional array of lasers, and the specific array form and the number of lasers are not limited, for example, a square array.
The lens layer includes: the collimating lens 3 and the focusing lens 2 are super-surface lenses, namely the collimating lens is a super-surface collimating lens, and the focusing lens is a super-surface focusing lens so as to be integrated with a passive phase-change radio frequency switch, so that the problem of high integration difficulty of the traditional lens is overcome, laser beam synthesis is realized, and compared with the traditional lens, the two-dimensional planar structure has the advantages of lighter weight, smaller volume, lower manufacturing cost and easier integration, and is easier to integrate and design and install, and the specific super-surface form and the number of lenses are not limited; the collimating lens is arranged between the laser array and the focusing lens at intervals, and the focusing lens is arranged between the collimating lens and the passive phase-change radio frequency switch at intervals.
The passive phase-change radio frequency switch 1 comprises sequentially stacked: a substrate layer 14, a heat dissipation layer 15, a phase change layer 16, an electrode layer 17, and a passivation layer 18; the passivation layer is spaced adjacent to the lens layer. Specifically: the substrate layer 14 is arranged at the bottom of the heat dissipation layer 15 and has the same size as the heat dissipation layer; the phase change layer 16 is arranged at the top center of the heat dissipation layer and has an area smaller than that of the heat dissipation layer; the electrode layer 17 comprises a first part and a second part which are overlapped, the first part is sleeved on the outer side of the phase-change layer, the outer edge of the first part is parallel to the edge of the heat dissipation layer, the thickness of the first part is the same as that of the phase-change layer, so that the top of the first part and the top of the phase-change layer are coplanar, the outer edge of the second part is the same as that of the heat dissipation layer, and an open accommodating cavity is formed in the center of the top of the phase-change layer; a passivation layer 18 fills the receiving cavity and covers the top of the electrode layer.
In this embodiment, the laser is a bottom-emitting vertical cavity surface emitting laser (i.e., bottom-emitting VCSEL laser), comprising sequentially stacked: an N-type contact layer 6, an antireflection film 7, an N-type substrate 8, an N-type DBR9, a quantum well active region 10, an oxidation window 11, a P-type DBR12 and a P-type contact layer 13; the N-type contact layer and the antireflection film are adjacent to the lens layer interval. Specifically: the N-type contact layer 6 is arranged at the bottom of the N-type substrate and has the same size as the outer edge of the N-type substrate; the middle of the N-type contact layer is opened and is embedded with an antireflection film 7, the thickness of the antireflection film is smaller than that of the N-type contact layer, and the antireflection film is arranged in the center of the bottom of the N-type substrate 8; the N-type DBR9 is arranged on the top of the N-type substrate and has the same size as the N-type substrate; the quantum well active region 10 is arranged at the top center of the N-type DBR; the oxidation window 11 is arranged on the top of the quantum well active region and has the same size as the outer edge of the quantum well active region; the P-type DBR12 is disposed on top of the oxide window and is the same size as the outer edge of the oxide window; the P-type contact layer 13 is provided on top of the P-type DBR and has the same size as the P-type DBR. The outer edges of the N-type contact layer 6, the N-type substrate 8, and the N-type DBR9 are all the same in size, and the outer edges of the quantum well active region 10, the oxide window 11, the P-type DBR12, and the P-type contact layer 13 are all the same in size.
In this application, laser array, lens layer and passive phase transition radio frequency switch from the top down interval distribution in proper order, and further, laser array, collimating lens, focusing lens and passive phase transition radio frequency switch from the top down interval distribution in proper order, specifically, phase transition radio frequency switch from the top down is in proper order: the phase-change radio frequency switch comprises a laser array, a collimating lens, a focusing lens, a passivation layer, an electrode layer, a phase-change layer, a heat dissipation layer and a substrate layer, and more specifically, the phase-change radio frequency switch comprises the following components in sequence from top to bottom: the semiconductor device comprises a P-type contact layer, a P-type DBR, an oxidation window, a quantum well active region, an N-type DBR, an N-type substrate, an antireflection film, an N-type contact layer, a collimating lens, a focusing lens, a passivation layer, an electrode layer, a phase change layer, a heat dissipation layer and a substrate layer.
Wherein the materials of each layer are selected as follows:
the P-type contact layer 13 is made of: ti/Pt/Au.
The P-type DBR12 is made of: multiple pairs of C-doped Al 0.9 Ga 0.1 As/GaAs to achieve high reflectivity of 99% or more.
The oxidation window 11 is made of the following materials: low refractive index Al x O y /AlAs。
The quantum well active region 10 is made of the following materials: in (In) 0.2 Ga 0.8 As and GaAs.
The N-type DBR9 is made of: multi-pair Si doped Al 0.9 Ga 0.1 As/GaAs, provides high reflectivity for a laser of a specific wavelength.
The N-type substrate 8 is made of: gaAs.
The antireflection film 7 is made of the following materials: si with high transmittance 3 N 4 And SiO x Hybrid film or HfO 2 A film.
The material of the N-type contact layer 6 is Ge/Ni/Au.
The passivation layer 18 is made of: siO (SiO) 2 ，SiO 2 The insulating material with good light transmittance can reduce the energy loss of laser, is favorable for laser beams to penetrate the passivation layer to irradiate the phase-change layer with smaller energy loss, helps the phase change to quickly heat up and generate phase change.
The electrode layer 17 is made of the following materials: au, ag, cu, pt, ti, cr, ITO, at least one of the group consisting of the polypyrrole and the graphene, a transparent electrode material can be used in consideration of light transmittance, so that the photoexcitation efficiency can be improved and the switching speed can be increased.
The material of the phase change layer 16 is: at least one of the vanadium oxide and the chalcogenide is designed by taking reasonable length, width and thickness indexes into consideration in addition to the resistivity of the material, and considering the distance between two radio frequency electrodes under the condition of ensuring that the on-resistance is as small as possible, so that the off-state capacitance value is also smaller.
The heat dissipation layer 15 is made of: alN, si 3 N 4 At least one of titanium oxide and aluminum oxide adopts a material with higher heat conductivity coefficient and insulation, so that the phase change layer can be annealed rapidly in the amorphization process, and recrystallization is prevented.
The substrate layer 14 is made of the following materials: siO (SiO) 2 At least one of, si, sapphire, siC, gaN and GaAs.
It is necessary to explain that: the laser is formed by MOCVD growth, and laser generated by the laser irradiates the passive phase-change radio frequency switch through the collimating lens and the focusing lens in sequence to form different laser beam paths 5.
It also needs to be stated that: each layer in the passive phase-change radio frequency switch and each layer in the laser are sequentially processed from bottom to top by adopting a plating film and photoetching mode, and the specific plating film and photoetching process are specifically set according to the materials of each layer.
According to the photoinduction integrated phase-change radio frequency switch, the laser arrays, the lens layers and the passive phase-change radio frequency switch are arranged at intervals, and outgoing laser of the laser arrays is emitted into the passive phase-change radio frequency switch after passing through the lens layers, so that compared with the electrically-excited phase-change radio frequency switch in the prior art, the switching speed of the photoinduction integrated phase-change radio frequency switch in the application is faster, ns level can be achieved, and the isolation of the switch is further improved due to the fact that the complex design of a heater is reduced; meanwhile, the VCSELs are arranged into a two-dimensional array to improve laser power, the collimating lens is used for collimating multiple light beams, and then the focusing lens is used for converging the collimated light beams to a light spot with a proper size, the light spot can completely cover the phase-change layer, namely the area of emergent light of the focusing lens is equal to the area of the phase-change layer in the passive phase-change radio frequency switch, so that the high efficiency of laser energy is ensured, enough phase-change energy is provided for the phase-change layer, and the normal phase-change function of the phase-change switch is ensured; in addition, the integrated design of the bottom-emitting laser (namely the optical excitation source), the super-surface lens and the passive phase-change radio frequency switch can meet the switch requirement of micron level, and has the advantages of simple structure, easy integration, small volume, low cost and high practicability.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the present application. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.

Claims (10)

1. A photoinduced integrated phase change radio frequency switch comprising: a plurality of lasers, a lens layer, and a passive phase change radio frequency switch;
a plurality of lasers are distributed at intervals on the same plane to form a laser array;
the lens layer is respectively arranged with the laser array and the passive phase-change radio frequency switch at intervals, so that the emergent laser of the laser array is emitted into the passive phase-change radio frequency switch after passing through the lens layer.
2. The photoinduced integrated phase-change radio frequency switch of claim 1, wherein the lens layer comprises: a collimator lens and a focusing lens;
the collimating lens is arranged between the laser array and the focusing lens, and the focusing lens is arranged between the collimating lens and the passive phase-change radio frequency switch.
3. The photoinduced integrated phase-change radio frequency switch of claim 2 wherein the area of the focusing lens that emits light is equal to the area of the phase-change layer in the passive phase-change radio frequency switch.
4. The photoinduced integrated phase change radio frequency switch of claim 3 wherein the collimating lens and the focusing lens are both super surface lenses.
5. The photoinduced integrated phase-change radio frequency switch of claim 4 wherein the laser array, the collimating lens, the focusing lens, and the passive phase-change radio frequency switch are parallel to one another.
6. The photoinduced integrated phase-change radio frequency switch of any one of claims 1 to 5, wherein the passive phase-change radio frequency switch comprises sequentially stacked: the device comprises a substrate layer, a heat dissipation layer, a phase change layer, an electrode layer and a passivation layer;
the passivation layer is spaced adjacent to the lens layer.
7. The photoinduced integrated phase-change radio frequency switch of claim 6 wherein:
the substrate layer is arranged at the bottom of the heat dissipation layer and has the same size as the heat dissipation layer;
the phase change layer is arranged at the center of the top of the heat dissipation layer, and the area of the phase change layer is smaller than that of the heat dissipation layer;
the electrode layer comprises a first part and a second part which are overlapped; the first part is sleeved on the outer side of the phase change layer, and the outer edge of the first part is parallel to the edge of the heat dissipation layer; the first portion is the same thickness as the phase change layer such that the top of the first portion and the top of the phase change layer are coplanar; the outer edge of the second part is the same as the heat dissipation layer in size, and an open accommodating cavity is formed in the center of the top of the phase change layer;
the passivation layer fills the accommodating cavity and covers the top of the electrode layer.
8. The light-induced integrated phase-change radio frequency switch of any one of claims 1 to 5, wherein the laser is a bottom-emitting vertical cavity surface-emitting laser.
9. The photoinduced integrated phase-change radio frequency switch of claim 8 wherein the laser comprises sequentially overlapping: the semiconductor device comprises an N-type contact layer, an antireflection film, an N-type substrate, an N-type DBR, a quantum well active region, an oxidation window, a P-type DBR and a P-type contact layer;
the N-type contact layer and the antireflection film are adjacent to the lens layer interval.
10. The photoinduced integrated phase change radio frequency switch of any one of claims 1 to 5 wherein the laser is grown using MOCVD.
CN202310472250.4A 2023-04-27 2023-04-27 Photo-induced integrated phase-change radio frequency switch Pending CN116390638A (en)

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CN202310472250.4A CN116390638A (en) 2023-04-27 2023-04-27 Photo-induced integrated phase-change radio frequency switch

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Application Number Priority Date Filing Date Title
CN202310472250.4A CN116390638A (en) 2023-04-27 2023-04-27 Photo-induced integrated phase-change radio frequency switch

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CN116390638A true CN116390638A (en) 2023-07-04

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