CN116387436A - Light emitting device for improving light crosstalk, preparation method thereof and display panel - Google Patents
Light emitting device for improving light crosstalk, preparation method thereof and display panel Download PDFInfo
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- 238000003466 welding Methods 0.000 claims description 9
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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Abstract
The disclosure provides a light emitting device for improving light crosstalk, a preparation method thereof and a display panel, and belongs to the technical field of photoelectron manufacturing. The light emitting device includes: a substrate, a carrier layer and a plurality of monochromatic light emitting structures; the bearing layer is positioned on the bearing surface of the substrate and comprises a plurality of bearing blocks which are distributed at intervals, at least one single-color luminous structure corresponds to at least one bearing block, and the single-color luminous structure corresponding to the bearing block is positioned on one side, away from the substrate, of the corresponding bearing block. The light cross talk problem easily occurring in the single-color light-emitting structure which is horizontally arranged can be improved, and the light-emitting effect of the light-emitting device is improved.
Description
Technical Field
The disclosure relates to the technical field of photoelectron manufacturing, in particular to a light emitting device for improving light crosstalk, a preparation method thereof and a display panel.
Background
The light emitting device of three primary colors is an electronic element which enables the light emitting diode to emit light of different colors through the principle of three primary colors. The three-primary-color light-emitting device has self-luminous characteristics, and has the characteristics of high brightness, high contrast, high reactivity and electricity saving.
In the related art, a light emitting device of three primary colors generally includes a substrate, a carrier layer laminated on a surface of the substrate, and a plurality of single color light emitting structures horizontally spaced apart on the carrier layer, and light emitting colors of the single color light emitting structures generally include red light, green light, and blue light.
Because the bearing layer is a transparent film layer, light emitted from the monochromatic light-emitting structure enters the light-emitting area of other monochromatic light-emitting structures through the bearing layer in the process of large-angle or horizontal propagation, so that the problem of light crosstalk is caused, the color cast phenomenon of the light-emitting device is caused, and the light-emitting effect is influenced.
Disclosure of Invention
The embodiment of the disclosure provides a light-emitting device for improving light crosstalk, a preparation method thereof and a display panel, which can improve the problem of light crosstalk easily occurring in a horizontally arranged monochromatic light-emitting structure and improve the light-emitting effect of the light-emitting device. The technical scheme is as follows:
embodiments of the present disclosure provide a light emitting device including: a substrate, a carrier layer and a plurality of monochromatic light emitting structures; the bearing layer is positioned on the bearing surface of the substrate and comprises a plurality of bearing blocks which are distributed at intervals, at least one single-color luminous structure corresponds to at least one bearing block, and the single-color luminous structure corresponding to the bearing block is positioned on one side, away from the substrate, of the corresponding bearing block.
In one implementation of the embodiment of the disclosure, the orthographic projection of the single-color light emitting structure on the bearing surface is located in the orthographic projection of the corresponding bearing block on the bearing surface.
In another implementation of the disclosed embodiments, the thickness of the carrier layer is 3 μm to 30 μm.
In another implementation manner of the embodiment of the disclosure, the light emitting device further includes a light shielding layer, where the light shielding layer is located on the bearing surface, the side wall of the bearing block, the side wall of the monochromatic light emitting structure, and the surface of the monochromatic light emitting structure away from the bearing surface.
In another implementation of the embodiments of the present disclosure, the light shielding layer includes at least one of a metal layer, an inorganic material layer, and an organic material layer.
In another implementation of the embodiments of the present disclosure, the light shielding layer has a thickness of 0.1 μm to 2 μm.
In another implementation of an embodiment of the present disclosure, the light emitting device further includes a first passivation layer and a plurality of pairs of electrodes, the first passivation layer covering a surface of the light shielding layer remote from the substrate; the plurality of pairs of electrodes are positioned on the surface of the first passivation layer, which is far away from the substrate, and are electrically connected with the plurality of monochromatic light emitting structures through the via holes, each pair of electrodes comprises a first electrode and a second electrode, and a plurality of first electrodes in the plurality of pairs of electrodes are electrically connected.
In another implementation of an embodiment of the present disclosure, the light emitting device further includes a second passivation layer and a plurality of pad blocks; the second passivation layer is located on the surface, away from the substrate, of the first passivation layer, the welding spot blocks are located on the surface, away from the substrate, of the second passivation layer, one of the welding spot blocks is connected with any one of the first electrodes through the through holes, and other welding spot blocks in the welding spot blocks are electrically connected with the second electrodes in the pairs of electrodes through the through holes in a one-to-one correspondence mode.
Embodiments of the present disclosure provide a display panel including a light emitting device as described above.
The embodiment of the disclosure provides a preparation method of a light-emitting device, which comprises the following steps: providing a substrate; forming a bearing layer on the bearing surface of the substrate; forming a plurality of monochromatic light-emitting structures on the surface of the bearing layer far away from the bearing surface; and removing the part of the bearing layer between the plurality of monochromatic light emitting structures, forming a plurality of bearing blocks which are arranged at intervals on the bearing surface, wherein at least one monochromatic light emitting structure corresponds to at least one bearing block, and the monochromatic light emitting structure corresponding to the bearing block is positioned on the corresponding bearing block.
The technical scheme provided by the embodiment of the disclosure has the beneficial effects that at least:
in the light-emitting device provided by the embodiment of the disclosure, the bearing layer is arranged on the bearing surface of the substrate, and comprises a plurality of bearing blocks distributed at intervals, and each single-color light-emitting structure is arranged on the corresponding bearing block. After the single-color light-emitting structure emits light, as the bearing blocks below the single-color light-emitting structure are arranged at intervals, most of light can be blocked at the gaps among the bearing blocks even if the light is transmitted at a large angle or horizontally, so that the light can be effectively prevented from entering the light-emitting areas of other single-color light-emitting structures through the bearing layer, the problem of light crosstalk is solved, the color cast phenomenon of the light-emitting device is avoided, and the light-emitting effect of the light-emitting device is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings required for the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present disclosure, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic view of a hierarchical structure of a light emitting device according to an embodiment of the present disclosure;
FIG. 2 is a top view of a light emitting device provided in an embodiment of the present disclosure;
fig. 3 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present disclosure.
The various labels in the figures are described below:
10. a substrate;
20. a bearing layer; 21. a bearing block;
30. a single color light emitting structure; 310. a red light epitaxial layer; 320. a green light epitaxial layer; 330. a blue light epitaxial layer;
40. a light shielding layer;
51. a first passivation layer; 52. a second passivation layer;
61. a first electrode; 62. a second electrode;
70. and welding spot blocks.
Detailed Description
For the purposes of clarity, technical solutions and advantages of the present disclosure, the following further details the embodiments of the present disclosure with reference to the accompanying drawings.
Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," "third," and the like in the description and in the claims, do not denote any order, quantity, or importance, but rather are used to distinguish one element from another. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. The word "comprising" or "comprises", and the like, is intended to mean that elements or items that are present in front of "comprising" or "comprising" are included in the word "comprising" or "comprising", and equivalents thereof, without excluding other elements or items. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", "top", "bottom" and the like are used only to indicate relative positional relationships, which may be changed accordingly when the absolute position of the object to be described is changed.
Fig. 1 is a schematic diagram of a hierarchical structure of a light emitting device according to an embodiment of the present disclosure. As shown in fig. 1, the light emitting device includes: a substrate 10, a carrier layer 20 and a plurality of single color light emitting structures 30.
As shown in fig. 1, the carrier layer 20 is located on the carrier surface of the substrate 10, the carrier layer 20 includes a plurality of carrier blocks 21 arranged at intervals, at least one single-color light emitting structure 30 corresponds to at least one carrier block 21, and the single-color light emitting structure 30 corresponding to the carrier block 21 is located on a side of the corresponding carrier block 21 away from the substrate 10.
In the light emitting device provided in the embodiments of the present disclosure, the carrier layer 20 is disposed on the carrier surface of the substrate 10, and the carrier layer 20 includes a plurality of carrier blocks 21 distributed at intervals, and each of the single-color light emitting structures 30 is disposed on the corresponding carrier block 21. After the single-color light-emitting structure 30 emits light, since the bearing blocks 21 below the single-color light-emitting structure 30 are arranged at intervals, most of light can be blocked at the gaps between the bearing blocks 21 even if the light is transmitted at a large angle or horizontally, so that the light can be effectively prevented from entering the light-emitting areas of other single-color light-emitting structures 30 through the bearing layer 20, the problem of light crosstalk is solved, the color cast phenomenon of the light-emitting device is avoided, and the light-emitting effect of the light-emitting device is improved.
In the embodiment of the present disclosure, the at least one single color light emitting structure 30 corresponds to the at least one carrier block 21 including the following cases:
in the first implementation, as shown in fig. 1, the single-color light emitting structures 30 are in one-to-one correspondence with the carrier blocks 21. That is, each of the single color light emitting structures 30 is individually provided with one carrier block 21, which can maximally avoid the crosstalk problem of light between adjacent single color light emitting structures 30.
In the second implementation, one single color light emitting structure 30 corresponds to a plurality of carrier blocks 21. That is, a plurality of carrier blocks 21 are simultaneously disposed under one single-color light emitting structure 30, so that after light emitted by the same single-color light emitting structure 30 enters each carrier block 21, the light can only propagate horizontally within a range defined by the carrier blocks 21, and the horizontal propagation of the light is further weakened.
In the third implementation, a plurality of the single-color light emitting structures 30 simultaneously corresponds to one carrier block 21. That is, only one bearing block 21 is arranged below the plurality of monochromatic light emitting structures 30, so that the fineness of the mask plate can be reduced when the bearing block 21 is etched, and the rapid preparation is facilitated.
In a fourth implementation, the plurality of single color light emitting structures corresponds to the plurality of carrier blocks. I.e. a plurality of carrier blocks are arranged below the plurality of monochromatic light emitting structures.
The number of the single-color light emitting structures may be equal to the number of the carrier blocks, or the number of the single-color light emitting structures may be greater than the number of the carrier blocks, or the number of the single-color light emitting structures may be less than the number of the carrier blocks, which is not limited in the embodiments of the present disclosure.
Illustratively, 3 single color light emitting structures correspond to 2 carrier blocks.
Illustratively, 2 single color light emitting structures correspond to 3 carrier blocks.
In the disclosed embodiment, the single color light emitting structure 30 may include a red light epitaxial layer 310, a green light epitaxial layer 320, and a blue light epitaxial layer 330.
The red light epitaxial layer 310 includes a first p-type layer, a first light emitting layer, and a first n-type layer, which are sequentially stacked.
In the red epitaxial layer 310, the first p-type layer includes a p-type AlInP layer.
Wherein the first light emitting layer includes AlGaInP quantum well layers and AlGaInP quantum barrier layers alternately grown, wherein the Al content in the AlGaInP quantum well layers and the AlGaInP quantum barrier layers is different. The first light emitting layer may include an AlGaInP quantum well layer and an AlGaInP quantum barrier layer of 3 to 8 periods alternately stacked.
Wherein the first n-type layer may be an n-type AlGaInP current spreading layer.
In the embodiment of the present disclosure, the green epitaxial layer 320 includes a second p-type layer, a second light emitting layer, and a second n-type layer, which are sequentially stacked.
In the green epitaxial layer 320, the second p-type layer includes a p-type GaN layer.
Wherein the second light emitting layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are alternately grown. The second light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the second n-type layer comprises an n-type GaN layer.
In the embodiment of the present disclosure, the blue epitaxial layer 330 includes a third p-type layer, a third light emitting layer, and a third n-type layer, which are sequentially stacked.
In the blue epitaxial layer 330, the third p-type layer includes a p-type GaN layer.
Wherein the third light emitting layer may include an InGaN quantum well layer and a GaN quantum barrier layer alternately grown. The third light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the third n-type layer comprises an n-type GaN layer.
Alternatively, the thickness of the single color light emitting structure 30 is 2 μm to 10 μm.
Illustratively, the thickness of the red epitaxial layer 310 is 5 μm, the thickness of the green epitaxial layer 320 is 8 μm, and the thickness of the blue epitaxial layer 330 is 6 μm.
Alternatively, the carrier layer 20 may be a silicon oxide layer. Wherein the thickness of the silicon oxide layer may be 3 μm to 30 μm.
Illustratively, the thickness of the carrier layer 20 may be 10 μm.
Alternatively, as shown in fig. 1, the orthographic projection of the monochromatic light emitting structure 30 on the bearing surface is located within the orthographic projection of the corresponding bearing block 21 on the bearing surface.
In the above implementation manner, the area of the orthographic projection of the monochromatic light emitting structure 30 on the bearing surface is smaller than the area of the orthographic projection of the bearing block 21 on the bearing surface, so that most of the light emitted by the monochromatic light emitting structure 30 can enter the corresponding bearing block 21, the situation that the light of the monochromatic light emitting structure 30 exits to the gaps between the bearing blocks 21 is not easy to occur, the problem of light crosstalk caused by large-angle or horizontal propagation of the light is avoided, and the light emitting effect of the light emitting device is improved.
Illustratively, as shown in fig. 1, the orthographic projection of the monochromatic light-emitting structure 30 on the bearing surface coincides with the orthographic projection of the corresponding bearing block 21 on the bearing surface. I.e. the area of the orthographic projection of the monochromatic light emitting structure 30 on the bearing surface is equal to the area of the orthographic projection of the bearing block 21 on the bearing surface.
Illustratively, the area of the orthographic projection of the monochromatic light-emitting structure 30 on the bearing surface is smaller than the area of the orthographic projection of the bearing block 21 on the bearing surface. Because the area of the bearing blocks 21 is larger, part of obliquely emergent light rays of the monochromatic light-emitting structure 30 also enter the bearing blocks 21, and are not easy to exit to gaps among the bearing blocks 21, so that the problem of light crosstalk caused by large-angle or horizontal propagation of the light rays is further avoided, and the light-emitting effect of the light-emitting device is improved.
Optionally, as shown in fig. 1, the light emitting device further includes a light shielding layer 40, where the light shielding layer 40 is located on the carrying surface, the side wall of the carrying block 21, the side wall of the monochromatic light emitting structure 30, and the surface of the monochromatic light emitting structure 30 away from the carrying surface.
In the above implementation manner, by arranging the light shielding layer 40, light emitted by the monochromatic light emitting structure 30 can be further blocked from exiting from the side wall of the monochromatic light emitting structure 30 and the side wall of the bearing block 21, so that light rays propagating at a large angle or horizontally are effectively reduced, the problem of light crosstalk is avoided, and the light emitting effect of the light emitting device is improved.
Alternatively, the light shielding layer 40 has a thickness of 0.1 μm to 2 μm.
The thickness of the light shielding layer 40 is set within the above range, so that the light shielding effect required by the light shielding layer 40 can be satisfied, the thickness of the light shielding layer 40 can be controlled to be thinner, and the thicker light shielding layer 40 is prevented from being stacked to increase the thickness of the light emitting device.
Alternatively, the light shielding layer 40 includes at least one of a metal layer, an inorganic material layer, and an organic material layer.
Illustratively, the light shielding layer 40 may be a Cu layer. The thickness of the Cu layer may be 100nm to 300nm. For example, the thickness of the Cu layer is 150nm.
Illustratively, the light shielding layer 40 may be a SiN layer. The thickness of the SiN layer may be 100nm to 500nm. For example, the thickness of the SiN layer is 200nm.
Optionally, as shown in fig. 1, the light emitting device further includes a first passivation layer 51 and a plurality of pairs of electrodes, and the first passivation layer 51 covers a surface of the light shielding layer 40 remote from the substrate.
By covering the surface of the light shielding layer 40 with the first passivation layer 51, the surface of the light emitting device can be smoother, so that a subsequent film layer can be formed conveniently, and the first passivation layer 51 can also protect the monochromatic light emitting structure 30 and the light shielding layer 40, so that the reliability of the light emitting device is improved.
Optionally, the first passivation layer 51 includes at least one of a metal layer and a distributed bragg mirror layer.
The first passivation layer 51 may be an Au layer, for example. The thickness of the Au layer may be 0.1 μm to 2 μm. For example, the thickness of the Au layer may be 1 μm.
The first passivation layer 51 may be a distributed Bragg reflector (Distributed Bragg Reflection, DBR) layer including a plurality of periodicityAlternately layered SiO 2 Layer and TiO 2 A layer. And the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.
Wherein SiO in the DBR layer 2 The thickness of the layer may be 800 to 1200 angstroms, tiO 2 The thickness of the layer may be 500 angstroms to 900 angstroms.
The first passivation layer 51 may include a DBR layer and a metal layer sequentially stacked, for example.
The first passivation layer 51 may include a metal layer and a DBR layer, which are sequentially stacked, for example.
Illustratively, the first passivation layer 51 may include a plurality of DBR layers and metal layers alternately stacked periodically. And the number of periods of each film layer in the reflecting layer can be between 3 and 15.
Fig. 2 is a top view of a light emitting device provided in an embodiment of the present disclosure. As shown in fig. 2, a plurality of pairs of electrodes are located on the surface of the first passivation layer 51 away from the substrate 10, and the plurality of pairs of electrodes are electrically connected to the plurality of single-color light emitting structures 30 through vias, each pair of electrodes includes a first electrode 61 and a second electrode 62, and a plurality of first electrodes 61 in the plurality of pairs of electrodes are electrically connected.
Illustratively, as shown in fig. 1, the first passivation layer 51 and the light shielding layer 40 each have a plurality of vias exposing the first electrode 61 and the second electrode 62 in one-to-one correspondence, and the first electrode 61 and the second electrode 62 extend to a surface of the monochromatic light-emitting structure 30 away from the substrate 10 through the corresponding vias.
As shown in fig. 1 and 2, the first electrodes 61 are connected to each other.
In the above-described implementation, one of the first electrode 61 and the second electrode 62 is connected to the p-type semiconductor layer of the epitaxial layer, and the other of the first electrode 61 and the second electrode 62 is connected to the n-type semiconductor layer of the epitaxial layer.
As an example, the first electrode 61 may be connected to an n-type semiconductor layer of the epitaxial layer, and the second electrode 62 may be connected to a p-type semiconductor layer of the epitaxial layer.
Thus, the n-type semiconductor layers of the three epitaxial layers are connected together so as to control the energization simultaneously, and the p-type semiconductor layers of the epitaxial layers are respectively connected with different second electrodes 62 so as to be energized independently, thereby achieving the purpose of controlling the luminescence of the epitaxial layers independently.
Optionally, the light emitting device further includes a second passivation layer 52 and a plurality of solder bumps 70, where the second passivation layer 52 is located on a surface of the first passivation layer 51 away from the substrate 10, and the plurality of solder bumps 70 are located on a surface of the second passivation layer 52 away from the substrate 10, and one of the plurality of solder bumps 70 is connected to any one of the first electrodes 61 through a via hole, and other solder bumps 70 in the plurality of solder bumps 70 are electrically connected to a plurality of second electrodes 62 in the plurality of pairs of electrodes through via holes in a one-to-one correspondence.
Illustratively, as shown in FIG. 2, the light emitting device further includes four solder bumps 70. The second passivation layer 52 has a via hole exposing any one of the first electrodes 61 and three of the second electrodes 62, four pad pieces 70 are located on a surface of the second passivation layer 52 remote from the substrate 10, and the four pad pieces 70 are connected to one of the first electrodes 61 and three of the second electrodes 62, respectively, through the via holes.
This allows one pad 70 to be electrically connected as a common three first electrodes 61 so as to simultaneously energize the n-type semiconductor layers of the epitaxial layers. The three solder joint blocks 70 are electrically connected with the three second electrodes 62 respectively, so as to be electrified independently, and the purpose of independently controlling the light emission of each epitaxial layer is achieved.
The disclosed embodiments provide a display panel including three light emitting devices as described above.
Fig. 3 is a flowchart of a method for manufacturing a light emitting device according to an embodiment of the present disclosure. As shown in fig. 3, the preparation method comprises:
step S1: a substrate is provided.
Step S2: a bearing layer is formed on the bearing surface of the substrate.
Step S3: a plurality of single-color light-emitting structures are formed on the surface of the bearing layer far away from the bearing surface.
Step S4: and removing the part of the bearing layer between the plurality of single-color light-emitting structures, and forming a plurality of bearing blocks which are arranged at intervals on the bearing surface.
Wherein, at least one monochromatic light emitting structure corresponds with at least one carrier block, and the monochromatic light emitting structure that corresponds with the carrier block is located corresponding carrier block.
In the light-emitting device manufactured by the manufacturing method provided by the embodiment of the disclosure, the bearing layer is arranged on the bearing surface of the substrate, and comprises a plurality of bearing blocks distributed at intervals, and each single-color light-emitting structure is arranged on the corresponding bearing block. After the single-color light-emitting structure emits light, as the bearing blocks below the single-color light-emitting structure are arranged at intervals, most of light can be blocked at the gaps among the bearing blocks even if the light is transmitted at a large angle or horizontally, so that the light can be effectively prevented from entering the light-emitting areas of other single-color light-emitting structures through the bearing layer, the problem of light crosstalk is solved, the color cast phenomenon of the light-emitting device is avoided, and the light-emitting effect of the light-emitting device is improved.
In step S1, the substrate may be a sapphire substrate or a glass substrate, and the embodiments of the present disclosure are not limited.
In the step S2, the carrier layer 20 may be fabricated on the carrier surface of the substrate 10 by spin coating.
Alternatively, the carrier layer 20 may be a silicon oxide layer. Wherein the thickness of the silicon oxide layer may be 3 μm to 30 μm. Illustratively, the thickness of the carrier layer 20 may be 10 μm.
Step S3 may include the following steps:
in the first step, each of the single-color light emitting structures 30 is individually fabricated on the substrate. The single color light emitting structure 30 may include a red light epitaxial layer 310, a green light epitaxial layer 320, and a blue light epitaxial layer 330.
The red light epitaxial layer 310 includes a first p-type layer, a first light emitting layer, and a first n-type layer, which are sequentially stacked.
In the red epitaxial layer 310, the first p-type layer may be a p-type AlInP layer.
Wherein the first light emitting layer includes AlGaInP quantum well layers and AlGaInP quantum barrier layers alternately grown, wherein the Al content in the AlGaInP quantum well layers and the AlGaInP quantum barrier layers is different. The first light emitting layer may include an AlGaInP quantum well layer and an AlGaInP quantum barrier layer of 3 to 8 periods alternately stacked.
Wherein the first n-type layer may be an n-type AlGaInP current spreading layer.
In the embodiment of the present disclosure, the green epitaxial layer 320 includes a second p-type layer, a second light emitting layer, and a second n-type layer, which are sequentially stacked.
In the green epitaxial layer 320, the second p-type layer may be a p-type GaN layer.
Wherein the second light emitting layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are alternately grown. The second light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the second n-type layer may be an n-type GaN layer.
In the embodiment of the present disclosure, the blue epitaxial layer 330 includes a third p-type layer, a third light emitting layer, and a third n-type layer, which are sequentially stacked.
In the blue epitaxial layer 330, the third p-type layer may be a p-type AlInP layer.
Wherein the third light emitting layer may include an InGaN quantum well layer and a GaN quantum barrier layer alternately grown. The third light emitting layer may include InGaN quantum well layers and GaN quantum barrier layers of 3 to 8 periods alternately stacked.
Wherein the third n-type layer may be an n-type GaN layer.
Alternatively, the thickness of the single color light emitting structure 30 is 2 μm to 10 μm.
Illustratively, the thickness of the red epitaxial layer 310 is 5 μm, the thickness of the green epitaxial layer 320 is 8 μm, and the thickness of the blue epitaxial layer 330 is 6 μm.
In the second step, each of the completed single-color light emitting structures 30 is bonded to the carrier layer 20.
Step S4 may include: the areas of the bearing layer 20 between the single-color light emitting structures 30 are removed by etching, so as to obtain a plurality of bearing blocks 21 corresponding to the single-color light emitting structures 30 one by one. Alternatively, as shown in fig. 1, the orthographic projection of the monochromatic light emitting structure 30 on the bearing surface is located within the orthographic projection of the corresponding bearing block 21 on the bearing surface.
Illustratively, as shown in fig. 1, the orthographic projection of the monochromatic light-emitting structure 30 on the bearing surface coincides with the orthographic projection of the corresponding bearing block 21 on the bearing surface. I.e. the area of the orthographic projection of the monochromatic light emitting structure 30 on the bearing surface is equal to the area of the orthographic projection of the bearing block 21 on the bearing surface.
Therefore, most of light rays emitted by the monochromatic light emitting structure 30 can enter the corresponding bearing blocks 21, the condition that the light rays of the monochromatic light emitting structure 30 are emitted to gaps among the bearing blocks 21 is not easy to occur, the problem of light crosstalk caused by large-angle or horizontal propagation of the light rays is avoided, and the light emitting effect of the light emitting device is improved.
The preparation method after the step S4 further comprises the following steps:
in the first step, a light shielding layer 40 is formed on the bearing surface, the side wall of the bearing block 21, the side wall of the monochromatic light emitting structure 30, and the surface of the monochromatic light emitting structure 30 away from the bearing surface by spin coating or evaporation.
Alternatively, the light shielding layer 40 has a thickness of 0.1 μm to 2 μm.
The thickness of the light shielding layer 40 is set within the above range, so that the light shielding effect required by the light shielding layer 40 can be satisfied, the thickness of the light shielding layer 40 can be controlled to be thinner, and the thicker light shielding layer 40 is prevented from being stacked to increase the thickness of the light emitting device.
Alternatively, the light shielding layer 40 includes at least one of a metal layer, an inorganic material layer, and an organic material layer.
Illustratively, the light shielding layer 40 may be a Cu layer. The thickness of the Cu layer may be 100nm to 300nm. For example, the thickness of the Cu layer is 150nm.
Illustratively, the light shielding layer 40 may be a SiN layer. The thickness of the SiN layer may be 100nm to 500nm. For example, the thickness of the SiN layer is 200nm.
In the second step, the first passivation layer 51 is fabricated on the carrier layer 20 and the single color light emitting structure 30 by spin coating and photolithography, and the via hole is formed at a predetermined position.
Optionally, the first passivation layer 51 includes at least one of a metal layer and a distributed bragg mirror layer.
The first passivation layer 51 may be an Au layer, for example. The thickness of the Au layer may be 0.1 μm to 2 μm. For example, the thickness of the Au layer may be 1 μm.
The first passivation layer 51 may be a distributed bragg mirror (Distributed Bragg Reflection, abbreviated asCalled DBR) layers comprising a plurality of periodically alternately stacked SiO 2 Layer and TiO 2 A layer. And the number of periods of the DBR layer may be between 20 and 50. For example, the number of periods of the DBR layer is 32.
Wherein SiO in the DBR layer 2 The thickness of the layer may be 800 to 1200 angstroms, tiO 2 The thickness of the layer may be 500 angstroms to 900 angstroms.
Third, the first electrode 61 and the second electrode 62 are formed by photolithography and evaporation, and the first electrodes 61 are connected together.
Fourth, a second passivation layer 52 is formed on the first passivation layer 51 by spin coating and photolithography, and a via hole is formed at a predetermined position.
Optionally, the second passivation layer 52 includes at least one of a metal layer and a distributed bragg mirror layer.
Wherein the thickness of the second passivation layer 52 may be 0.2 μm to 10 μm.
Fifth, as shown in fig. 1, a pad 70 is fabricated by photolithography and evaporation.
The foregoing disclosure is not intended to be limited to any form of embodiment, but is not intended to limit the disclosure, and any simple modification, equivalent changes and adaptations of the embodiments according to the technical principles of the disclosure are intended to be within the scope of the disclosure, as long as the modifications or equivalent embodiments are possible using the technical principles of the disclosure without departing from the scope of the disclosure.
Claims (10)
1. A light emitting device, the light emitting device comprising: a substrate (10), a carrier layer (20) and a plurality of monochromatic light emitting structures (30);
the bearing layer (20) is located on a bearing surface of the substrate (10), the bearing layer (20) comprises a plurality of bearing blocks (21) which are distributed at intervals, at least one single-color light-emitting structure (30) corresponds to at least one bearing block (21), and the single-color light-emitting structure (30) corresponding to the bearing block (21) is located on one side, away from the substrate (10), of the corresponding bearing block (21).
2. A light emitting device according to claim 1, characterized in that the orthographic projection of the monochromatic light emitting structure (30) on the bearing surface is located within the orthographic projection of the corresponding bearing block (21) on the bearing surface.
3. A light emitting device according to claim 1, characterized in that the thickness of the carrier layer (20) is 3 μm to 30 μm.
4. The light emitting device according to claim 1, further comprising a light shielding layer (40), the light shielding layer (40) being located on the bearing surface, a side wall of the bearing block (21), a side wall of the monochromatic light emitting structure (30) and a surface of the monochromatic light emitting structure (30) remote from the bearing surface.
5. The light-emitting device according to claim 4, wherein the light-shielding layer (40) includes at least one of a metal layer, an inorganic material layer, and an organic material layer.
6. The light-emitting device according to claim 4, wherein the light-shielding layer (40) has a thickness of 0.1 μm to 2 μm.
7. A light emitting device according to claim 4, characterized in that the light emitting device further comprises a first passivation layer (51) and a plurality of pairs of electrodes, the first passivation layer (51) covering the surface of the light shielding layer (40) remote from the substrate (10);
the plurality of pairs of electrodes are located on the surface, far away from the substrate (10), of the first passivation layer (51), the plurality of pairs of electrodes are electrically connected with the plurality of single-color light emitting structures (30) through the via holes, each pair of electrodes comprises a first electrode (61) and a second electrode (62), and a plurality of first electrodes (61) in the plurality of pairs of electrodes are electrically connected.
8. The light emitting device of claim 7, further comprising a second passivation layer (52) and a plurality of solder bumps (70);
the second passivation layer (52) is located on the surface, far away from the substrate (10), of the first passivation layer (51), the plurality of welding spot blocks (70) are located on the surface, far away from the substrate (10), of the second passivation layer (52), one of the plurality of welding spot blocks (70) is connected with any one of the first electrodes (61) through a through hole, and other welding spot blocks (70) in the plurality of welding spot blocks (70) are electrically connected with a plurality of second electrodes (62) in the plurality of pairs of electrodes through the through holes in a one-to-one correspondence.
9. A display panel, characterized in that the display panel comprises a light emitting device according to any one of claims 1 to 8.
10. A method of manufacturing a light emitting device, the method comprising:
providing a substrate;
forming a bearing layer on the bearing surface of the substrate;
forming a plurality of monochromatic light-emitting structures on the surface of the bearing layer far away from the bearing surface;
and removing the part of the bearing layer between the plurality of monochromatic light emitting structures, forming a plurality of bearing blocks which are arranged at intervals on the bearing surface, wherein at least one monochromatic light emitting structure corresponds to at least one bearing block, and the monochromatic light emitting structure corresponding to the bearing block is positioned on the corresponding bearing block.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310110701.XA CN116387436A (en) | 2023-02-09 | 2023-02-09 | Light emitting device for improving light crosstalk, preparation method thereof and display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310110701.XA CN116387436A (en) | 2023-02-09 | 2023-02-09 | Light emitting device for improving light crosstalk, preparation method thereof and display panel |
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| Publication Number | Publication Date |
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| CN116387436A true CN116387436A (en) | 2023-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310110701.XA Pending CN116387436A (en) | 2023-02-09 | 2023-02-09 | Light emitting device for improving light crosstalk, preparation method thereof and display panel |
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| Country | Link |
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| CN (1) | CN116387436A (en) |
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- 2023-02-09 CN CN202310110701.XA patent/CN116387436A/en active Pending
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