CN116367671A

CN116367671A - Preparation method of semiconductor structure and semiconductor device

Info

Publication number: CN116367671A
Application number: CN202111604553.4A
Authority: CN
Inventors: 项泽众; 李顺朴; 仇明侠; 王宁; 苏耀荣
Original assignee: Shenzhen Technology University
Current assignee: Shenzhen Technology University
Priority date: 2021-12-24
Filing date: 2021-12-24
Publication date: 2023-06-30

Abstract

The invention relates to the technical field of semiconductor devices, and particularly discloses a preparation method of a semiconductor structure and a semiconductor device. The preparation method comprises the following steps: co-dissolving a small molecule semiconductor material and a dielectric polymer in a solvent to obtain a first mixed solution; transferring the first mixed solution to a template with a surface having a patterned structure; stacking the substrate on the surface of the template and applying pressure to enable the first mixed liquid to form a liquid film adsorbed between the substrate and the template; removing the solvent of the liquid film to enable a mixture film composed of a small molecule semiconductor material and a dielectric polymer to be attached to the surface of the substrate; and (3) carrying out heat treatment to enable the mixture film to be subjected to phase delamination to form a double-layer film, wherein each film layer in the double-layer film is sequentially laminated along the normal direction of the straight substrate, and the double-layer film copies the pattern of the template. The preparation method can obtain a nano-scale double-layer film on the surface of the substrate, and thus, a high-quality patterned semiconductor structure is obtained, and the output performance of a semiconductor device can be effectively improved.

Description

Preparation method of semiconductor structure and semiconductor device

Technical Field

The present invention relates to the field of semiconductor technologies, and in particular, to a method for manufacturing a semiconductor structure and a semiconductor device.

Background

The structuring of semiconductor materials has become a key technology in microelectronics. For inorganic semiconductor materials such as silicon, germanium, etc., this may be achieved by means of photolithography and etching, etc. In the case of organic semiconductor materials, however, it is difficult to carry out the structuring process by conventional processes, since organic semiconductors are very sensitive to radiation and corrosion means.

In order to solve the problems of the organic semiconductor materials, the prior art obtains the structured semiconductor film through mask evaporation, printing and the like, but the resolution of the structured semiconductor film obtained by the technical means is lower, the size of the structure can only reach the order of tens of micrometers, and smaller size is difficult to obtain. Aiming at the problem that smaller size cannot be obtained, the prior art adopts a flexible seal to induce or control solution to form a film and pattern, so that a structure with the scale of 1 micrometer or even nanometer can be obtained. However, for small molecule semiconductor materials, the flexible stamp is not capable of holding the semiconductor material in a structured form, as shown in fig. 1, where 1 represents the substrate, 2 represents the gold electrode, and 3 represents the semiconductor film. The pattern structure in fig. 1 is mainly because the small molecule semiconductor material is easy to be powdered after being separated from the solution, and the obtained semiconductor film layer has poor continuity, and the thickness and width dimensions are not uniform, so that the film forming quality is poor and the reliability of the semiconductor film layer is poor.

Disclosure of Invention

The invention provides a preparation method of a semiconductor structure, which aims to solve the problems of poor film forming quality and poor reliability of a small molecule semiconductor material during patterning.

In order to achieve the above purpose, the technical scheme adopted by the embodiment of the invention is as follows:

a method for producing a semiconductor film, comprising the steps of:

co-dissolving a small molecule semiconductor material and a dielectric polymer in a solvent to obtain a first mixed solution;

transferring the first mixed liquid to the surface of a template, wherein the surface of the template is provided with a patterning structure;

stacking a substrate on the surface of the template and applying pressure to enable the first mixed liquid to form a liquid film adsorbed between the substrate and the template;

removing the solvent of the liquid film to enable a mixture film composed of the small molecule semiconductor material and the dielectric polymer to be attached to the surface of the substrate;

and carrying out heat treatment on the substrate and the mixture film to enable the mixture film to be subjected to phase delamination to form a double-layer film, wherein each film layer in the double-layer film is sequentially laminated along the normal direction of the substrate, and the double-layer film copies the pattern of the template.

In one possible embodiment, the small molecule semiconductor material comprises at least one of pentacene, 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene, 3,4,9, 10-tetracarboxylic diimide, dinaphtho [2,3-B:2',3' -F ] thieno [3,2-B ] thiophene, 7, 8-tetracyano terephthaloquinone dimethane, thiophene oligomers, triarylamines, triarylamine derivatives, flower-based diimide/north radical dianhydride derivatives, linear fused ring hydrocarbons, tetracene, naphthacene derivatives, triphenylene derivatives, hexabenzocoronene derivatives, phthalocyanine derivatives.

In one possible embodiment, the dielectric polymer comprises any one of polystyrene, polymethyl methacrylate, polyimide;

and/or the solvent is a volatile organic solvent.

In one possible embodiment, the small molecule semiconductor film formed by the small molecule semiconductor material is laminated on the surface of the substrate, and the dielectric polymer film formed by the dielectric polymer is laminated on the surface of the small molecule semiconductor film;

alternatively, a dielectric polymer film formed of the dielectric polymer is laminated on the surface of the substrate; the small molecule semiconductor film formed by the small molecule semiconductor material is laminated on the surface of the dielectric polymer film;

or, the surface of the substrate is provided with a transition film layer, the small molecule semiconductor film formed by the small molecule semiconductor material is laminated on the surface of the transition film layer, and the dielectric polymer film formed by the dielectric polymer is laminated on the surface of the small molecule semiconductor film;

or, the surface of the substrate is provided with a transition film layer, and a dielectric polymer film formed by the dielectric polymer is laminated on the surface of the transition film layer; the small molecule semiconductor film formed by the small molecule semiconductor material is laminated on the surface of the dielectric polymer film.

In one possible embodiment, the transition film layer comprises a phenyltrichlorosilane film layer.

In one possible embodiment, the temperature of the heat treatment is 60 ℃ to 300 ℃;

and/or the template is a flexible template, and the patterning structure comprises grooves and/or protrusions.

Compared with the prior art, the preparation method of the semiconductor structure provided by the embodiment of the invention has the advantages that the small-molecule semiconductor material and the dielectric polymer are dissolved in the solvent together, and then the solvent is removed, so that the mixture film consisting of the small-molecule semiconductor material and the dielectric polymer is obtained, the problems of poor film forming quality and poor reliability caused by powdering of the small-molecule semiconductor material are effectively avoided, and the two substances in the mixture film are subjected to phase separation through heat treatment, so that the patterned double-layer film is obtained, the thickness and the width of the double-layer film can reach the nano-scale, and meanwhile, the characteristics of uniform thickness and uniform width are presented, so that the high-quality patterned semiconductor structure can be obtained.

A second object of the embodiment of the present invention is to provide a semiconductor device, which adopts the following specific technical scheme:

a semiconductor device, comprising:

the semiconductor structure comprises a substrate and a functional film layer, wherein the functional film layer is laminated on the substrate in a patterning way;

the functional film layer comprises a small molecule semiconductor film and a dielectric polymer film which are sequentially laminated;

the source electrode is overlapped on the local surface of the functional film layer and extends and is overlapped on the local surface of the substrate;

the drain electrode is overlapped on the local surface of the functional film layer, extends and is overlapped on the local surface of the substrate, and a space is reserved between the drain electrode and the source electrode;

the semiconductor structure is prepared according to the preparation method of the semiconductor structure.

In one possible embodiment, the semiconductor structure further includes a transition film layer laminated between the substrate and the functional film layer and extending between the source electrode and the substrate and between the drain electrode and the substrate.

In one possible embodiment, the small molecule semiconductor film is stacked on the surface of the transition film layer, and the dielectric polymer film is stacked on the surface of the small molecule semiconductor film;

or the dielectric polymer film is stacked on the surface of the transition film layer, and the small molecule semiconductor film is stacked on the surface of the dielectric polymer film.

In one possible embodiment, the semiconductor device includes any one of a field effect transistor, a photosensor, a chemical sensor, and a biosensor;

and/or the thickness of the double film layer is between 5nm and 1 mu m, and the width is between 10nm and 500 mu m.

Compared with the prior art, the semiconductor device provided by the embodiment of the invention has the advantages that the nano-scale double-layer film structure is formed in the semiconductor structure, the thickness and the width of the double-layer film are uniform, and the quality of the film layer is high, so that the semiconductor device has high reliability and output characteristics.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is an optical micrograph of a patterned semiconductor structure prepared from a pure small molecule semiconductor material;

fig. 2 is a schematic flow chart of a method for manufacturing a semiconductor structure according to an embodiment of the present invention;

fig. 3 is a simplified flow chart of a method for fabricating a semiconductor structure according to embodiment 1 of the present invention;

FIG. 4 is a graphical optical micrograph of a semiconductor structure according to example 1 of the present invention;

fig. 5 is a simplified flow chart of the method for fabricating a semiconductor device from a semiconductor structure according to embodiment 1 of the present invention;

fig. 6 is a schematic partial sectional view of a semiconductor device manufactured in example 1 of the present invention;

FIG. 7 is a graph showing the UV-sensitive measurement of a semiconductor light-sensitive device prepared in example 1 of the present invention;

fig. 8 is a schematic partial sectional view of a semiconductor device manufactured in example 3 of the present invention.

Illustration of:

10. a template; 101. patterning the structure;

11. a substrate; 12. a first mixed solution; 13. a liquid film; 14. a transition film layer; 15. a bilayer membrane; 151. a small molecule semiconductor film; 152. a dielectric polymer film; 16. a source electrode; 17. a drain electrode;

20. a semiconductor device.

Detailed Description

The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.

Referring to fig. 2, an embodiment of the present invention provides a method for manufacturing a semiconductor structure, including the following steps:

(1) The small molecule semiconductor material and the dielectric polymer are co-dissolved in a solvent to obtain a first mixed solution 12.

In the step (1), the feeding mass ratio of the small molecule semiconductor material to the dielectric polymer is 2:1-1:1. In some embodiments, the small molecule semiconductor material comprises pentacene, 2, 7-dioctyl [1]]Benzothieno [3,2-B]Benzothiophene (C) ₈ BTBT), 3,4,9, 10-tetracarbodiimide (PTCDI), dinaphtho [2,3-B:2',3' -F]Thieno [3,2-B]At least one of thiophene (DNTT), 7, 8-Tetracyanoquinodimethane (TCNQ), thiophene oligomer (oligothiophene), triarylamine (TPD), triarylamine derivatives, flower based diimide/north based dianhydride (lPTCDI/PTCDA) derivatives, linear condensed ring hydrocarbons, tetracenes, tetracene derivatives (such as rubrene), triphenylene derivatives, hexabenzocoronene derivatives, and phthalocyanine derivatives. The small molecule semiconductor materials have good semiconductor characteristics and can be made into an active layer of a field effect transistor.

In some embodiments, the dielectric polymer includes any one of Polystyrene (PS), polymethyl methacrylate (PMMA), polyimide (PI). When the dielectric polymer and the small molecule semiconductor material exist in a mixture state, the dielectric polymer and the small molecule semiconductor material are subjected to heat treatment, phase separation occurs to generate layering, and two film layers which are mutually laminated and connected are obtained.

In some embodiments, the solvent is a volatile organic solvent, and the volatile organic solvent is used as a solvent, so that on one hand, the small molecule semiconductor material and the dielectric polymer can be simultaneously dissolved, and on the other hand, the solvent is also easily volatilized to be removed, so that a mixture of the small molecule semiconductor material and the dielectric polymer is obtained. In some embodiments, the volatile organic solvent comprises any one of chloroform, an aromatic solvent, and the like, wherein the aromatic solvent comprises any one of toluene, chlorobenzene, and the like.

(2) The first mixed liquor 12 is transferred to the surface of the template 10, the surface of the template 10 having patterned structures 101.

In step (2), the template 10 has flexibility, specifically, the template 10 may be made of Polydimethylsiloxane (PDMS), acrylate rubber, polysulfide rubber, polyurethane rubber, butyl rubber, neoprene rubber, etc., the surface of the template 10 has patterned structures 101, and these patterned structures 101 may be grooves or protrusions, or include both grooves and protrusions, specifically, the design is performed according to the structure of the device, and by designing the surface of the template 10 to be patterned structures 101, on one hand, the adsorption of the first mixed solution 12 is facilitated, and on the other hand, the obtainment of a film layer with patterning is facilitated. Preferably, the patterned structure 101 is a trench. In some embodiments, template 10 is a stamp and patterned structure 101 of the stamp is obtained by either embossing or embossing. In some embodiments, the template 10 is surface treated such that the first mixed liquor 12 does not readily spread over the surface of the template 10.

(3) The substrate 11 is stacked on the surface of the template 10, and pressure is applied to form a liquid film 13 of the first mixed liquid 12 adsorbed between the substrate 11 and the template 10.

In step (3), the substrate 11 may be a silica plate. In some embodiments, the surface of the substrate 11 is laminated with a transition film layer 14, which on the one hand facilitates the approach of the phase separated dielectric polymer to the substrate 11 side; on the other hand, the small molecule semiconductor material is fully isolated from the substrate, so that the small molecule semiconductor material is prevented from contacting the substrate 11 due to pinholes in the dielectric polymer film 152, the trap state of charges is reduced, and the current density of the device is improved. In some embodiments, the transition film layer 14 is a monolayer, such as may be formed from Phenyltrichlorosilane (PTS).

The pressure is applied to the substrate 11 and the template 10 at 5MPa to 20MPa, so that the substrate 11 and the template 10 can be attached to each other, and the liquid film 13 is uniformly distributed between the substrate 11 and the template 10. Since the substrate 11 is stacked on the template 10, in order to keep the first mixed liquid 12 on the surface of the template 10 without losing the liquid film 13, the substrate 11 is generally above the template 10, in some embodiments, the substrate 11 and the template 10 are turned over such that the surface of the template 10 having the patterned structure 101 faces downward, and the substrate 11 is located below the template 10 and is left for a period of time such that the liquid film 13 can sufficiently infiltrate the substrate 11. In some embodiments, the substrate 11-liquid film 13-template 10 is placed in a fixture to facilitate the application of pressure to enhance the conforming effect of the substrate 11 and template 10.

(4) The solvent of the liquid film 13 is removed, and a mixture film composed of a small molecule semiconductor material and a dielectric polymer is attached to the surface of the substrate 11.

In step (4), the solvent of the liquid film 13 may be volatilized by heating or natural volatilization. In some embodiments, the heating temperature is 60 ℃ to 200 ℃, and the heating temperature may be specifically selected according to the boiling point of the solvent, not limited to 60 ℃ to 200 ℃. In some embodiments, since the solvent is a volatile organic solvent that may generate toxic gases when volatilized or decomposed, the solvent may be removed in the exhaust gas collection device to avoid environmental pollution or operator poisoning. After the solvent of the liquid film 13 is removed, the small molecule semiconductor material and the dielectric polymer remain on the surface of the substrate 11, that is, a mixture film composed of the small molecule semiconductor material and the dielectric polymer remains on the surface of the substrate 11, and the mixture film remains on the surface of the substrate 11 in a pattern according to the track of the patterned structure 101 in the template 10, and the morphology of the patterned mixture film is in a regular or irregular state, that is, the front projection of the mixture film on the substrate 11 falls in the area surrounded by the front projection of the patterned structure 101 of the template 10 on the substrate 11, and the surface of the mixture film facing away from the substrate 11 may be in a regular or irregular state. In some embodiments, the mixture film is completely copied to the patterned structure 101, in some embodiments, the mixture film is in an island state, and the mixture film with different morphologies can be obtained by adjusting the content of each component in the first mixed solution 12

(5) The substrate 11 and the mixture film are subjected to heat treatment to cause phase delamination of the mixture film into a bilayer film 15, the film layers in the bilayer film 15 are sequentially laminated along the normal direction of the substrate 11, and the bilayer film 15 copies the patterned structure 101 of the template 10.

In step (5), the substrate 11 and the template 10 may be separated before the substrate 11 is heat-treated, so as to avoid adhesion of the double-layered film 15 obtained by phase separation to the template 10 during the heat treatment.

In some embodiments, the temperature of the heat treatment is 90 ℃ to 200 ℃, and the heat treatment causes the small molecule semiconductor and the dielectric polymer in the mixture film to be separated to form two layers of films which are mutually laminated and connected, wherein one layer is the small molecule semiconductor film 151, and the other layer is the dielectric polymer film 152.

In the semiconductor structure obtained in the step (5), the bilayer film 15 is stacked on the surface of the substrate 11 in a patterning manner, and the bilayer film 15 has relatively uniform thickness and width at each part of the substrate 11, so that the performance of the semiconductor device 20 manufactured by the semiconductor structure can be effectively improved. When the transition film layer 14 is not formed on the surface of the substrate 11, a small molecule semiconductor film 151 formed of a small molecule semiconductor material is laminated on the surface of the substrate 11, and a dielectric polymer film 152 formed of a dielectric polymer is laminated on the surface of the small molecule semiconductor film 151; alternatively, the dielectric polymer film 152 formed of a dielectric polymer is laminated on the surface of the substrate 11, and the small molecule semiconductor film 151 formed of a small molecule semiconductor material is laminated on the surface of the dielectric polymer film 152. Alternatively, when the transition film layer 14 is laminated on the surface of the substrate 11, the small molecule semiconductor film 151 formed of the small molecule semiconductor material is laminated on the surface of the transition film layer 14, and the dielectric polymer film 152 formed of the dielectric polymer is laminated on the surface of the small molecule semiconductor film 151; alternatively, the dielectric polymer film 152 formed of a dielectric polymer is laminated on the surface of the transition film layer 14, and the small molecule semiconductor film 151 formed of a small molecule semiconductor material is laminated on the surface of the dielectric polymer film 152. The relative positional relationship between the small molecule semiconductor film 151 and the dielectric polymer film 152 is determined by the interface energy between the two films, the film having a low interface energy being close to the substrate 11, and the film having a higher interface energy being far from the substrate 11. Of course, the positional relationship between the small molecule semiconductor film 151 and the dielectric polymer film 152 may be adjusted by performing surface treatment on the substrate 11. In some embodiments, the bilayer film 15 may be made to be in a one-dimensional pattern or a two-dimensional pattern or a three-dimensional pattern by adjusting the concentration of each component in the first mixed liquor 12 in step (1).

Referring to fig. 5 and 6, further, the semiconductor device 20 is obtained by laminating the active electrode 16 and the drain electrode 17 on the surface of the bilayer film 15 by a mask deposition process. The semiconductor device 20 can be obtained by evaporating gold (Au) electrodes through a mask, and the source electrode 16 is stacked on a partial surface of the bilayer film 15 and extends to a partial surface of the substrate 11; the drain electrode 17 is stacked on a partial surface of the bilayer film 15 and extends to a partial surface of the substrate 11, and a space is formed between the source electrode 16 and the drain electrode 17 to avoid shorting. The semiconductor device 20 thus obtained has good output characteristics.

In some embodiments, the semiconductor device 20 includes the substrate 11, the functional film layer, the source electrode 16, and the drain electrode 17. Wherein the functional film layer is laminated on the surface of the substrate 11, and the functional film layer is patterned; the functional film layer includes a small molecule semiconductor film 151 and a dielectric polymer film 152 which are laminated in this order; the source electrode 16 is overlapped on a partial surface of the functional film layer and extends and is overlapped on a partial surface of the substrate 11; the drain electrode 17 is stacked on a partial surface of the functional film layer, and extends and stacks on a partial surface of the substrate 11, and a space is provided between the drain electrode 17 and the source electrode 16. In some embodiments, the functional film layer has a thickness between 5nm and 1 μm and a width between 10nm and 500 μm and has a relatively uniform areal density and a relatively uniform width dimension.

In some embodiments, the semiconductor device 20 further includes a transition film layer 14, where the transition film layer 14 is stacked between the substrate 11 and the functional film layer, and extends between the source electrode 16 and the substrate 11 and between the drain electrode 17 and the substrate 11.

In some embodiments, the small molecule semiconductor film 151 is stacked on the surface of the transition film layer 14, and the dielectric polymer film 152 is stacked on the surface of the small molecule semiconductor film 151; alternatively, the dielectric polymer film 152 is stacked on the surface of the transition film layer 14, and the small molecule semiconductor film 151 is stacked on the surface of the dielectric polymer film 152.

In some embodiments, semiconductor device 20 includes any one of a field effect transistor, a field effect transistor array, a chemical sensor, a photosensitive device, and a biosensor.

In order to better explain the technical solution of the present invention, the following description will further explain through a plurality of embodiments.

Example 1

Referring to fig. 3 to 6, a method for manufacturing a semiconductor device 20 includes the steps of:

(1) 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothieno and polystyrene are dissolved in chloroform to obtain a first mixed solution 12, and the feeding mass ratio of the 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothieno and polystyrene is 2:1.

(2) The polydimethylsiloxane liquid precursor is poured on a master plate with a raised pattern, and cured to obtain the polydimethylsiloxane template 10, and the surface of the template 10 is formed with a patterned concave structure, in particular a patterned groove structure, namely a patterned structure 101.

(3) Placing the polydimethylsiloxane template 10 on a platform, enabling the patterned structure 101 to face upwards, transferring the first mixed solution 12 obtained in the step (1) to the surface of the template 10, and laminating the silicon dioxide substrate 11 on the surface of the polydimethylsiloxane template 10, so that the first mixed solution 12 spreads between the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 to form a liquid film 13, and the three forms a sandwich structure of a silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10, wherein a phenyl trichlorosilane film layer is formed on the surface of the silicon dioxide substrate 11, the phenyl trichlorosilane film layer is a monomolecular film layer, and the phenyl trichlorosilane film layer faces the polydimethylsiloxane template 10.

(4) The sandwich layer structure of the silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10 is transferred to a fixture, and a pressure of 5MPa is applied to firmly attach the silicon dioxide substrate 11 and the polydimethylsiloxane template 10, and then the mixture is heated to 70 ℃ so as to volatilize chloroform.

(5) After the volatilization of chloroform is completed, the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are separated, a mixture film consisting of 2, 7-dioctyl [1] benzothiophene [3,2-B ] benzothiophene and polystyrene is remained on the surface of the silicon dioxide substrate 11, the mixture film is distributed in a patterning way, and the orthographic projection of the mixture film on the silicon dioxide substrate 11 falls in a region surrounded by the orthographic projection of the patterning structure 101 of the template 10 on the silicon dioxide substrate 11.

(6) The silicon dioxide substrate 11 and the mixture film remaining on the surface thereof are transferred to a condition of 100 c and heated (i.e., annealed) for 10 hours, so that 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene and polystyrene are phase-separated, and a polystyrene-forming polystyrene film is laminated on the surface of the

silicon dioxide substrate

11, and 2, 7-dioctyl [1] benzothiophene [3,2-B ] benzothiophene is laminated on the surface of the polystyrene film, thereby obtaining a semiconductor structure.

(7) The mask plate 10 is vapor-deposited with an Au layer, a part of which constitutes the source electrode 16 and another part of which constitutes the drain electrode 17, and with a space between the source electrode 16 and the drain electrode 17, wherein the source electrode 16 is laminated on the surface of the small molecule semiconductor film 151 and extends to the phenyltrichlorosilane film layer, and the drain electrode 17 is laminated on the surface of the small molecule semiconductor film 151 and extends to the phenyltrichlorosilane film layer, thereby obtaining the semiconductor device 20, that is, the thin film transistor.

The semiconductor structure obtained in step (6) was photographed by an optical microscope, and the result is shown in fig. 4.

As can be seen from fig. 4, the resulting double-layered film 15 of the semiconductor structure exhibits a linear continuous characteristic and has a relatively uniform width at various portions of the substrate 11.

The corresponding performance characterization of the semiconductor device 20 obtained in the step (7) is performed, specifically, the device is characterized by a method of measuring a transistor by using a semiconductor parameter analyzer, namely, the relationship between the drain current and the gate voltage is measured under the condition of fixed drain bias, and the measurement is performed under the conditions of darkness and ultraviolet illumination respectively, as shown in fig. 7.

As can be seen from fig. 7, as the gate voltage increases, there is charge enrichment at the semiconductor-dielectric interface and the drain current increases; and the current change measured during ultraviolet irradiation is higher, which indicates that the device can be used as an ultraviolet detector and has better output performance.

Example 2

A method of fabricating a semiconductor device 20, comprising the steps of:

(1) 3,4,9, 10-tetra-formyldiimine and polystyrene are dissolved in chloroform to obtain a first mixed solution 12, and the feeding mass ratio of the 3,4,9, 10-tetra-formyldiimine to the polystyrene is 1:1 (5 mg of 3,4,9, 10-tetracarboxylic acid diimide and 5mg of polystyrene per ml of the first mixture).

(2) The polydimethylsiloxane liquid precursor is poured on a master plate with a raised pattern, and cured to obtain the polydimethylsiloxane template 10, and the surface of the template 10 is formed with a patterned concave structure, namely a patterned structure 101.

(3) Placing the polydimethylsiloxane template 10 on a platform, enabling the patterning structure 101 to face upwards, transferring the first mixed solution 12 obtained in the step (1) into the patterning structure 101 of the template 10, and laminating the silicon dioxide substrate 11 on the surface of the polydimethylsiloxane template 10, so that the first mixed solution 12 spreads between the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 to form a liquid film 13, and the three forms a sandwich structure of a silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10, wherein a phenyl trichlorosilane film layer is formed on the surface of the silicon dioxide substrate 11, the phenyl trichlorosilane film layer is a monomolecular film layer, and the phenyl trichlorosilane film layer faces the polydimethylsiloxane template 10.

(4) The sandwich layer structure of the silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10 is transferred to a clamp, and a pressure of 20MPa is applied to firmly attach the silicon dioxide substrate 11 and the polydimethylsiloxane template 10, and then the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are volatilized at room temperature to volatilize chloroform.

(5) After the volatilization of chloroform is completed, the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are separated, a mixture film consisting of 3,4,9, 10-tetracarboxylic diimide and polystyrene is remained on the surface of the silicon dioxide substrate 11, the mixture film is distributed in a patterning way, and the front projection of the mixture film on the silicon dioxide substrate 11 falls on the region surrounded by the patterning structure 101 of the template 10 on the front projection of the silicon dioxide substrate 11.

(6) The silicon dioxide substrate 11 and the mixture film remaining on the surface thereof are transferred to a heating (annealing) treatment at 100 ℃ for 10 hours, so that the 3,4,9, 10-tetracarboxylic diimide and the polystyrene are phase-separated, and a polystyrene-forming polystyrene film is laminated on the surface of the silicon dioxide substrate 11, and the 3,4,9, 10-tetracarboxylic diimide forms a small molecule semiconductor film 151 laminated on the surface of the polystyrene film, thereby obtaining a semiconductor structure.

Example 3

A method of fabricating a semiconductor device 20, comprising the steps of:

(1) The 7, 8-tetracyano-terephthalquinone dimethane and polystyrene are dissolved in chloroform to obtain a first mixed solution 12, and the feeding mass ratio of the 7, 8-tetracyano-terephthalquinone dimethane to the polystyrene is 1:1 (5 mg of 7, 8-tetracyanoquinodimethane and 5mg of polystyrene per ml of first mixture).

(3) Placing the polydimethylsiloxane template 10 on a platform so that the patterned structure 101 faces upwards, transferring the first mixed solution 12 obtained in the step (1) to the surface of the template 10, and laminating the silicon dioxide substrate 11 on the surface of the polydimethylsiloxane template 10, so that the first mixed solution 12 spreads between the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 to form a liquid film 13, and the three form a sandwich layer structure of the silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10.

(4) The sandwich layer structure of the silicon dioxide substrate 11-liquid film 13-polydimethylsiloxane template 10 is transferred to a fixture, and a pressure of 5MPa is applied to firmly attach the silicon dioxide substrate 11 and the polydimethylsiloxane template 10, and then the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are volatilized at room temperature to volatilize chloroform.

(5) After the volatilization of chloroform is completed, the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are separated, a mixture film consisting of 7, 8-tetracyanoquinodimethane and polystyrene is remained on the surface of the silicon dioxide substrate 11, the mixture film is distributed in a patterning way, and the front projection of the mixture film on the silicon dioxide substrate 11 falls in a region surrounded by the patterning structure 101 of the template 10 and the front projection of the silicon dioxide substrate 11.

(6) The silica substrate 11 and the mixture film remaining on the surface thereof were transferred to a heating (annealing) treatment at 100 ℃ for 10 hours, so that 7, 8-tetracyano-terephthalquinone dimethane and polystyrene were phase-separated, and a polystyrene-forming polystyrene film was laminated on the surface of the silica substrate 11, while 7, 8-tetracyano-terephthalquinone dimethane formed a small molecule semiconductor film 151 was laminated on the surface of the polystyrene film, thereby obtaining a semiconductor structure.

(7) The mask plate 10 is vapor-deposited with an Au layer, wherein a part of the Au layer constitutes a source electrode 16, another part of the Au layer constitutes a drain electrode 17, and a space is provided between the source electrode 16 and the drain electrode 17, wherein the source electrode 16 is laminated on the surface of the small molecule semiconductor film 151 and extends to the surface of the substrate 11, and the drain electrode 17 is laminated on the surface of the small molecule semiconductor film 151 and extends to the surface of the substrate 11, thereby obtaining a semiconductor device 20, i.e., a thin film transistor, for a specific structure, see fig. 8.

Example 4

A method of fabricating a semiconductor device 20, comprising the steps of:

(1) 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene and polymethyl methacrylate are dissolved in chloroform to obtain a first mixed solution 12, and the feeding mass ratio of the 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene to the polymethyl methacrylate is 1:1 (5 mg of 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene and 5mg of polymethyl methacrylate per ml of first mixture 12).

(3) Placing the polydimethylsiloxane template 10 on a platform so that the patterning structure 101 faces upwards, transferring the first mixed solution 12 obtained in the step (1) to the template 10, enabling the first mixed solution 12 to flow onto the patterning structure 101, and laminating the silicon dioxide substrate 11 on the surface of the polydimethylsiloxane template 10, so that the first mixed solution 12 spreads between the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 to form a liquid film 13, and forming a sandwich structure of 'the silicon dioxide substrate 11-the liquid film 13-the polydimethylsiloxane template 10', wherein a phenyl trichlorosilane film layer is formed on the surface of the silicon dioxide substrate 11, the phenyl trichlorosilane film layer is a monomolecular film layer, and the phenyl trichlorosilane film layer faces the polydimethylsiloxane template 10.

(5) After the volatilization of chloroform is completed, the silicon dioxide substrate 11 and the polydimethylsiloxane template 10 are separated, a mixture film consisting of 2, 7-dioctyl [1] benzothiophene [3,2-B ] benzothiophene and polymethyl methacrylate is remained on the surface of the silicon dioxide substrate 11, the mixture film is distributed in a patterning way, and the orthographic projection of the mixture film on the silicon dioxide substrate 11 falls in a region surrounded by the orthographic projection of the patterning structure 101 of the template 10 on the silicon dioxide substrate 11.

(6) The silica substrate 11 and the mixture film remaining on the surface thereof were transferred to a condition of 100 ℃ and heated (annealed) for 10 hours, so that 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene and polymethyl methacrylate were phase-separated, and polymethyl methacrylate forming polymethyl methacrylate film was laminated on the surface of the silica substrate 11, while 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene forming small molecule semiconductor film 151 was laminated on the surface of polystyrene film, thereby obtaining a semiconductor structure.

The foregoing is merely illustrative of the present invention, and the present invention is not limited thereto, and any equivalent modifications or substitutions will be apparent to those skilled in the art within the scope of the present invention, and are intended to be included within the scope of the present invention. Therefore, the protection scope of the invention is subject to the protection scope of the claims.

Claims

1. A method of fabricating a semiconductor structure, comprising the steps of:

and carrying out heat treatment on the substrate and the mixture film to enable the mixture film to generate phase layering to generate a double-layer film, wherein each film layer in the double-layer film is sequentially laminated along the normal direction of the substrate, and the double-layer film copies the pattern of the template.

2. The method of making a semiconductor structure of claim 1, wherein the small molecule semiconductor material comprises at least one of pentacene, 2, 7-dioctyl [1] benzothieno [3,2-B ] benzothiophene, 3,4,9, 10-tetracarboxylic diimide, dinaphtho [2,3-B:2',3' -F ] thieno [3,2-B ] thiophene, 7, 8-tetracyano terephthalquinone dimethane, thiophene oligomers, triarylamines, triarylamine derivatives, flower-based diimide/northlydianhydride derivatives, linear fused ring hydrocarbons, tetracene derivatives, triphenylene derivatives, hexabenzocoronene derivatives, phthalocyanine derivatives.

3. The method of manufacturing a semiconductor structure according to any one of claims 1 to 2, wherein the dielectric polymer comprises any one of polystyrene, polymethyl methacrylate, polyimide;

and/or the solvent is a volatile organic solvent.

4. The method for manufacturing a semiconductor structure according to any one of claims 1 to 2, wherein a small molecule semiconductor film formed of the small molecule semiconductor material is laminated on a surface of the substrate, and a dielectric polymer film formed of the dielectric polymer is laminated on a surface of the small molecule semiconductor film;

5. The method of manufacturing a semiconductor structure of claim 4, wherein the transition film layer comprises a phenyltrichlorosilane film layer.

6. The method of manufacturing a semiconductor structure according to any one of claims 1 to 2, wherein the temperature of the heat treatment is 60 ℃ to 300 ℃;

7. A semiconductor device, comprising:

the semiconductor structure is prepared according to the preparation method of the semiconductor structure as claimed in any one of claims 1 to 6.

8. The semiconductor device according to claim 7, wherein the semiconductor structure further comprises a transition film layer which is stacked between the substrate and the functional film layer and extends between the source electrode and the substrate and between the drain electrode and the substrate.

9. The semiconductor device according to claim 8, wherein the small-molecule semiconductor film is stacked on a surface of the transition film layer, and the dielectric polymer film is stacked on a surface of the small-molecule semiconductor film;

10. The semiconductor device according to any one of claims 7 to 9, wherein the semiconductor device includes any one of a field effect transistor, a photosensor, a chemical sensor, and a biosensor;

and/or the thickness of the double-layer film is between 5nm and 1 mu m, and the width is between 10nm and 500 mu m.