CN116366009A - High temperature stability's radio frequency power amplifier - Google Patents
High temperature stability's radio frequency power amplifier Download PDFInfo
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- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/301—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in MOSFET amplifiers
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Abstract
The invention relates to the technical field of radio frequency front ends, in particular to a radio frequency power amplifier with high temperature stability; the transistor Q of the radio frequency amplifying unit is compensated by adding a power compensation unit on the basis of the radio frequency amplifying unit 6b The voltage difference between the base electrode and the emitter electrode of the radio frequency power amplifier suppresses the linearity of the radio frequency power amplifier and realizes constant transconductance; the first temperature compensation unit is additionally arranged to compensate the power output characteristic of the first temperature compensation unit under the bias condition, and the compensated current is output to the second temperature compensation unit; the second temperature compensation unit is additionally arranged to adjust the transistor Q according to the generated third current 6b Suppressing the base current of transistor Q 6b Is increased; inhibit theThe rf power amplifier outputs a fluctuation of the 1dB compression point with temperature change.
Description
Technical Field
The invention relates to the technical field of radio frequency front ends, in particular to a radio frequency power amplifier with high temperature stability.
Background
With the development of wireless communication technology, the rapid progress of the information age is strongly promoted, and the development of mobile communication is advanced from the 1G age to the current 5G age by 40 years.
1G is the sprouting phase of mobile communications development, implemented in a cellular radiotelephone mode based on analog modulation techniques. The 2G people can only make very simple primary functions of making a call, sending and receiving mail, browsing the Internet and the like, and realizes the great change from analog communication to digital communication, and then steps into the era of digital communication. The 3G technology has wider bandwidth and faster network transmission speed, and realizes various and rich multimedia functions such as real-time browsing of webpages, video real-time conferences and the like on the basis of the 2G function. The 4G starts an intelligent era, integrates 3G and WLAN, and starts to have the capability of mobile broadband rapid transmission, so that communication is more reliable and stable. The 5G truly opens the era of everything interconnection, and in order to expand the communication capacity and improve the transmission speed and the transmission quality, a more advanced modulation technology is adopted and the limited spectrum resources are fully utilized.
The 5G communication adopts the simultaneous same-frequency full duplex technology to improve the operation efficiency, greatly improves the number of online users, fully utilizes each time slot and spectrum resource, and maximally transmits data. Aiming at the problem of network congestion caused by incapability of widely distributing a 4G macro base station, the 5G communication provides a high-density network construction technology, and the communication capacity is effectively improved by increasing the layout density of low-power small stations, so that a multi-level base station architecture is constructed aiming at different application scenes.
The appearance of 5G provides powerful mobile communication guarantee for virtual reality, augmented reality, life cloud end and intelligent interaction. In order to realize high-rate communication, the signal bandwidth of 5G is improved by at least one time compared with that of 4G, the maximum continuous signal bandwidth reaches 320MHz, 1.2GHz is reached in the FR2 frequency band, and OFDM (Orthogonal Frequency Division Multiplexing), namely an orthogonal frequency division multiplexing technology, is adopted in a digital modulation mode, so that the maximum utilization rate of spectrum resources is realized. The 5G communication adopts a large-scale MIMO technology, and compared with 4T4R transceiving adopted by a 4G LTE macro base station, the 5G base station adopts a large-scale array antenna transceiving scheme with the maximum of 64T 64R.
The highest 5G downlink adopts 256QAM digital modulation technology, adopts MIMO, intelligent antenna and other technologies, improves the spectrum utilization rate and improves the channel capacity. However, for the rf power amplifier, the higher the spectrum utilization of the modulation mode, the larger the peak-to-average ratio PAR of the signal, the larger the nonlinear distortion introduced when the rf power amplifier wants to linearly amplify the signal, and the power level of the rf power amplifier must be backed off to reduce the nonlinear distortion, but when the rf power amplifier works in the low output power mode, the efficiency of the rf power amplifier will be sacrificed, and a series of problems such as high energy consumption and heat dissipation will be brought. Therefore, the rf power amplifier applied to 5G communication needs to have good linearity performance at high output power and improve efficiency as much as possible. In designing a radio frequency power amplifier, a bias structure as shown in fig. 1 is generally adopted to suppress drift of bias voltage of a transistor at a high power.
The self-adaptive bias structure can improve a proper static working point for the radio frequency power amplifier under the condition of high power output, thereby ensuring the constancy of transconductance, reducing gain compression and phase distortion caused by parasitic and nonlinear characteristics and expanding the linear working range of the radio frequency power amplifier. Meanwhile, a great amount of heat is generated when the radio frequency power amplifier works, and the environment temperature changes, so that the self-adaptive bias structure with the temperature compensation function can inhibit the change of a static working point along with the temperature. As shown in fig. 1, the conventional radio frequency power amplifier adopts an adaptive bias structure to inhibit the linearity degradation caused by the static operating point drift of the power amplifier during high power output.
However, as the temperature of the working environment of the device changes, the input impedance, the output power capacity and the like of the transistor change along with the change of the temperature, so that the output power characteristics of the traditional radio frequency power amplifier under the conditions of low temperature, normal temperature and high temperature are inconsistent, the linearity is greatly fluctuated due to the influence of the temperature, and in order to ensure the wireless communication distance and the signal quality of the mobile terminal, the redundancy of the system can be determined only by taking the worst value, thereby increasing the complexity of the system and reducing the efficiency of the system.
Disclosure of Invention
The invention provides a radio frequency power amplifier with high temperature stability, which aims at the problems of inconsistent output power characteristics, high system complexity and low system efficiency of the existing self-adaptive bias structure compensation amplifier under the conditions of low temperature, normal temperature and high temperature, and compensates a transistor Q of a radio frequency amplifying unit by adding a power compensation unit 6b The voltage difference between the base electrode and the emitter electrode of the radio frequency power amplifier suppresses the linearity of the radio frequency power amplifier and realizes constant transconductance; the first temperature compensation unit is additionally arranged to compensate the power output characteristic of the first temperature compensation unit under the bias condition, and the compensated current is output to the second temperature compensation unit; the second temperature compensation unit is additionally arranged to adjust the transistor Q according to the generated third current 6b Suppressing the base current of transistor Q 6b Is increased; fluctuations in the 1dB compression point of the rf power amplifier output with temperature changes are suppressed.
The invention has the following specific implementation contents:
a radio frequency power amplifier with high temperature stability comprises a radio frequency amplifying unit; transistor Q in the RF amplifying unit 6b An adaptive bias unit is arranged at the base electrode of the transistor; the self-adaptive bias unit comprises a power compensation unit, a first temperature compensation unit and a second temperature compensation unit; the input end of the first temperature compensation unit is connected with a power supply, and the output end of the first temperature compensation unit is connected with the input end of the second temperature compensation unit; the output end of the second temperature compensation unit is connected with the input end of the power compensation unit;
the input end of the power compensation unit is connected with a power supply, and the output end of the power compensation unit is connected with the transistor Q 6b Is connected with the base electrode of the transistor;
the power compensation unit is used for rectifying the radio frequency power leaked from the radio frequency amplification unit to the adaptive bias unit to generate a first current, and then regulating the transistor Q according to the first current 6b Finally compensating the transistor Q by adjusting the voltage of the power compensation unit 6b Base of (d) and said transistor Q 6b Voltage difference between emitters of (2)The linearity of the radio frequency power amplifier is restrained, and the constant transconductance is realized;
the first temperature compensation unit is used for amplifying the internal voltage difference of the second temperature compensation unit to obtain a voltage value which increases along with the temperature, compensating the power output characteristic of the second temperature compensation unit under the bias condition according to the voltage value, and outputting the compensated current to the second temperature compensation unit;
the second temperature compensation unit is used for amplifying the compensated current, generating a second current and outputting the second current to the power compensation unit, and then generating a third current according to the second current and outputting the third current to the transistor Q 6b Finally, according to the third current, adjust the transistor Q 6b Suppressing the base current of transistor Q 6b The base current of (a) increases.
In order to better implement the present invention, further, the first temperature compensation unit includes a current source unit, a current mirror unit;
the input end of the current mirror unit is connected with a power supply, the output end of the current mirror unit is connected with the input end of the current source unit, and the input end of the second temperature compensation unit is connected;
the output end of the current source unit is connected with the input end of the current mirror unit and the input end of the second temperature compensation unit;
the current source unit and the current mirror unit are mutually biased, and a stable working point is achieved by forming a positive feedback loop.
In order to better implement the invention, further, the current mirror unit comprises a transistor M 1b Transistor M 3b Transistor M 5b ；
The transistor M 1b Gate of (c) and the transistor M 3b Is connected to the gate of the current source, the transistor M 1b Is connected with the drain of the transistor M 3b Is connected to the drain of the transistor M 5b Is connected to the drain of the transistor M 1b Source of (c) and said transistor M 1b Is connected with the input end of the current source unit;
the transistor M 3b Gate of (c) and the transistor M 5b Gate of said transistor M 1b Is connected to the source of the current source unit, the transistor M 3b Is connected to a power supply, the transistor M 3b The source electrode of the current source unit is connected with the input end of the current source unit;
the transistor M 5b Is connected to a power supply, the transistor M 5b The output end of the current source unit is connected with the input end of the second temperature compensation unit.
In order to better implement the invention, further, the current source unit comprises a transistor M 2b Transistor M 4b Resistance R 1b Transistor Q 1b Transistor Q 2b ；
The transistor M 2b Source of (c) and said transistor M 1b Gate of (d), transistor M 1b Is connected to the source of the transistor M 5b Is connected with the drain of the transistor M 2b And the resistor R 1b Is connected to the input terminal of the transistor M 2b Gate of (c) and the transistor M 4b Gate of said transistor M 4b Source of said transistor M 3b Is connected with the source electrode of the transistor;
the transistor M 4b Gate of (c) and the transistor M 4b Is connected to the source of the transistor M 3b Is connected with the source of the transistor M 4b Is connected with the drain electrode of the transistor Q 2b The emitter of the second temperature compensation unit is connected with the input end of the second temperature compensation unit; the transistor M 4b Source of (c) and said transistor M 3b Is connected with the source electrode of the transistor;
the transistor Q 2b Base of (d) and said transistor Q 2b Is not equal to the collector of the transistor Q 1b Is not equal to the collector of the transistor Q 1b Is connected with the base and the ground of the transistor Q 2b Is connected with the collector of the transistor Q 1b Is not equal to the collector of the transistor Q 1b Is connected with the base and the ground of the transistor Q 2b Is supplemented with the second temperatureThe input end of the compensation unit is connected;
the transistor Q 1b Base of (d) and said transistor Q 1b Is connected with the collector and the ground of the transistor Q 1b Emitter of (c) and said resistor R 1b Is connected with the output end of the power supply.
In order to better implement the present invention, further, the first temperature compensation unit further includes an acquisition unit; the acquisition unit comprises a resistor R 2b ；
The resistor R 2b Is connected to the input terminal of the transistor M 4b Is connected with the drain electrode of the transistor Q 2b The resistance R is between the emitters of 2b Is connected to the output terminal of the transistor M 5b Between the source of the first temperature compensation unit and the input of the first temperature compensation unit.
In order to better implement the invention, further, the second temperature compensation unit comprises a transistor Q 3b Transistor Q 4b Resistance R 3b ；
The transistor Q 3b The collector of the transistor Q is connected with the output end of the first temperature compensation unit 3b The collector-emitter of (2) and the resistor R connected to ground 3b Is connected to the input terminal of the transistor Q 3b The base electrode of the first temperature compensation unit is connected with the input end of the power compensation unit and the output end of the first temperature compensation unit;
the transistor Q 4b Is connected to the collector of the transistor Q 3b Between the base of the transistor Q and the input of the power compensation unit 4b Is connected to the transistor Q 3b Emitter of (c) and said resistor R 3b Is connected with the input end of the transistor Q 4b Is connected to ground.
In order to better implement the invention, further, the power compensation unit comprises a transistor Q 5b Capacitance C 2b Resistance R 4b ；
The transistor Q 5b Base of (d) and said transistor Q 5b Is not equal to the collector of the transistor Q 3b Base electrode of the first temperature compensation unitThe transistor Q 3b Is connected with the collector of the transistor Q 5b Is connected to a power supply, the transistor Q 5b Emitter and resistor R of (2) 4b Is connected with the input end of the power supply;
the resistor R 4b And the output terminal of the transistor Q 6b Is connected to the base of the transistor.
The invention has the following beneficial effects:
(1) The invention obviously inhibits the linearity of the radio frequency power amplifier and the fluctuation of the output 1dB compression point along with the temperature change by adding the temperature compensation self-adaptive bias structure at the base electrode of the amplifying transistor of the radio frequency amplifying unit.
(2) The invention passes through the active device transistor Q 5b V of (2) BE To the power transistor Q 6b V of (2) BE And compensates for the drop in transconductance of the power tube to achieve a relatively constant transconductance of the power tube.
(3) The invention suppresses the transistor Q caused by the temperature rise when the temperature of the power amplifier rises by providing the second temperature compensation unit 6b The base current becomes large.
(4) The invention is realized by arranging transistors Q with different areas in a first temperature compensation unit 1b And transistor Q 2b Base-emitter voltage V of both BE Is a difference DeltaV between BE Is a voltage with a positive temperature coefficient, and the temperature coefficient is independent of temperature, deltaV BE After amplification, a voltage value increasing with the increase of temperature can be obtained for compensating the change of the self power output characteristic caused by the change of temperature under the same bias condition of the transistor.
Drawings
Fig. 1 is a schematic diagram of a conventional rf power amplifier circuit.
Fig. 2 is a schematic diagram of a high temperature stable rf power amplifier according to the present invention.
Fig. 3 is a graph showing a normalized amplitude error versus output power of a conventional rf power amplifier.
Fig. 4 is a schematic diagram of a normalized amplitude error versus output power curve of a high temperature stable rf power amplifier according to the present invention.
Fig. 5 is a schematic block diagram of a high temperature stable rf power amplifier according to the present invention.
Detailed Description
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it should be understood that the described embodiments are only some embodiments of the present invention, but not all embodiments, and therefore should not be considered as limiting the scope of protection. All other embodiments, which are obtained by a worker of ordinary skill in the art without creative efforts, are within the protection scope of the present invention based on the embodiments of the present invention.
In the description of the present invention, it should be noted that, unless explicitly stated and limited otherwise, the term "connected" should be interpreted broadly, and for example, it may be a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; or may be directly connected, or may be indirectly connected through an intermediate medium, or may be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Example 1:
the embodiment provides a radio frequency power amplifier with high temperature stability, which comprises a radio frequency amplifying unit; as shown in fig. 5, a transistor Q in the rf amplifying unit 6b An adaptive bias unit is arranged at the base electrode of the transistor; the self-adaptive bias unit comprises a power compensation unit, a first temperature compensation unit and a second temperature compensation unit; the input end of the first temperature compensation unit is connected with a power supply, and the output end of the first temperature compensation unit is connected with the input end of the second temperature compensation unit; the output end of the second temperature compensation unit is connected with the input end of the power compensation unit;
the input end of the power compensation unit is connected with a power supplyAn output terminal connected to the transistor Q 6b Is connected with the base electrode of the transistor;
the power compensation unit is used for rectifying the radio frequency power leaked from the radio frequency amplification unit to the adaptive bias unit to generate a first current, and then regulating the transistor Q according to the first current 6b Finally compensating the transistor Q by adjusting the voltage of the power compensation unit 6b Base of (d) and said transistor Q 6b The linearity of the radio frequency power amplifier is inhibited, and the constant transconductance is realized;
the first temperature compensation unit is used for amplifying the internal voltage difference of the second temperature compensation unit to obtain a voltage value which increases along with the temperature, compensating the power output characteristic of the second temperature compensation unit under the bias condition according to the voltage value, and outputting the compensated current to the second temperature compensation unit;
the second temperature compensation unit is used for amplifying the compensated current, generating a second current and outputting the second current to the power compensation unit, and then generating a third current according to the second current and outputting the third current to the transistor Q 6b Finally, according to the third current, adjust the transistor Q 6b Suppressing the base current of transistor Q 6b The base current of (a) increases.
Further, the first temperature compensation unit comprises a current source unit and a current mirror unit;
the input end of the current mirror unit is connected with a power supply, the output end of the current mirror unit is connected with the input end of the current source unit, and the input end of the second temperature compensation unit is connected;
the output end of the current source unit is connected with the input end of the current mirror unit and the input end of the second temperature compensation unit;
the current source unit and the current mirror unit are mutually biased, and a stable working point is achieved by forming a positive feedback loop.
Working principle: in the embodiment, the power compensation unit is additionally arranged to compensate the transistor Q of the radio frequency amplification unit 6b Base and emitter of (c)The voltage difference between the poles inhibits the linearity of the radio frequency power amplifier and realizes the constant transconductance; the first temperature compensation unit is additionally arranged to compensate the power output characteristic of the first temperature compensation unit under the bias condition, and the compensated current is output to the second temperature compensation unit; the second temperature compensation unit is additionally arranged to adjust the transistor Q according to the generated third current 6b Suppressing the base current of transistor Q 6b Is increased; fluctuations in the 1dB compression point of the rf power amplifier output with temperature changes are suppressed.
Example 2:
this embodiment describes the specific structures of the power compensation unit, the first temperature compensation unit, and the second temperature compensation unit in one specific embodiment, as shown in fig. 2, on the basis of embodiment 1 described above.
As shown in fig. 2, the self-adaptive bias circuit comprises a radio frequency amplifying unit and an adaptive bias unit, wherein the radio frequency amplifying unit comprises an inductor L 1b Capacitance C 1b Capacitance C 3b HBT transistor Q 6b An input matching network 1B and an output matching network 1B. Capacitor C 1b First end and signal input end IN 1b Connection, capacitance C 1b A second terminal connected to the first terminal of the input matching network 1b, a HBT transistor Q 6b Emitter connected to ground, HBT transistor Q 6b Collector, inductance L 1b The first end is connected with the first end of the output matching network 1B, the inductance L 1b Second end and power VCC 3b The second end of the output matching network 1B is connected with a capacitor C 3b The first end is connected with a capacitor C 3b A second terminal and a signal output terminal OUT 1b And (5) connection.
The adaptive bias unit comprises a resistor R 1b Resistance R 2b Resistance R 3b Resistance R 4b Capacitance C 2b HBT transistor Q 1b HBT transistor Q 2b HBT transistor Q 3b HBT transistor Q 4b HBT transistor Q 5b MOS transistor M 1b MOS transistor M 2b MOS transistor M 3b MOS transistor M 4b And MOS transistor M 5b 。
Input matching network 1b second end, HBT transistor Q 1b Base and resistor R 4b The first ends being connected together, resistor R 4b Second terminal and HBT transistor Q 5b Emitter connected, HBT transistor Q 5b Collector and power supply VCC 2b Connection, HBT transistor Q 5b Base and capacitor C 2b First end, HBT transistor Q 3b Base, HBT transistor Q 3b Collector, HBT transistor Q 4b Collector, MOS transistor M 5b Source and resistor R 2b The first ends are connected together, the capacitor C 2b The second terminal is connected to ground, HBT transistor Q 4b Emitter connected to ground, HBT transistor Q 4b Base and HBT transistor Q 3b Emitter, resistor R 3b The first ends being connected together, resistor R 3b The second end is connected with the ground, and the MOS transistor M 1b Drain and MOS transistor M 3b Drain, MOS transistor M 5b Drain, power supply VCC 1b Connected together, MOS transistor M 1b Gate and MOS transistor M 3b Grid, MOS transistor M 5b Grid, MOS transistor M 1b Source, MOS transistor M 2b Drain electrodes are connected together, MOS transistor M 2b Gate and MOS transistor M 4b Grid, MOS transistor M 3b Source, MOS transistor M 4b Drain electrodes are connected together, MOS transistor M 2b Source and resistor R 1b The first end is connected with the resistor R 1b Second terminal and HBT transistor Q 1b Collector connection, MOS transistor M 4b Source and resistor R 2b Second terminal, HBT transistor Q 2b Collectors are connected together, HBT transistor Q 1b Emitter and HBT transistor Q 1b Base-stage, HBT transistor Q 2b Emitter, HBT transistor Q 2b The base stage is connected to ground.
The radio frequency power amplifier with high temperature stability provided by the embodiment adopts the self-adaptive bias structure with increased temperature compensation, and can obviously inhibit the linearity of the radio frequency power amplifier and the fluctuation of the output 1dB compression point along with the temperature change.
By adaptive biasingWhen the input power of the radio frequency is increased, the radio frequency power leaked into the bias circuit is correspondingly increased, and the HBT transistor Q 5b The base-emitter junction diode of (2) rectifies the leaked radio frequency power to generate a DC current which is amplified to cause an HBT transistor Q 5b The current of the emitter increases and flows through the resistor R 4b And HBT transistor Q 6b The base current also becomes large. Due to capacitance C 2b Is introduced by HBT transistor Q 5b The leaked radio frequency signal will be shorted to ground. By introducing active device HBT transistors Q 5b V of (2) BE To power tube HBT transistor Q 6b V of (2) BE To compensate for the drop in transconductance of the power tube, thereby achieving a relatively constant transconductance of the power tube.
When the temperature of the power amplifier increases, HBT transistor Q 3b Will increase due to the resistance R 3b Is present, the increased current will flow to HBT transistor Q 4b HBT transistor Q 4b The base current of (a) increases. Via HBT transistor Q 4b After amplification, HBT transistor Q 4b The collector current increases, resulting in HBT transistor Q 5b The base current decreases. HBT transistor Q 5b Emitter current drop, HBT transistor Q caused by temperature rise is suppressed 6b The base current becomes large.
HBT transistor Q 1b And HBT transistor Q 2b The collector currents are the same and the areas are different, the base-emitter voltages V of the two are the same BE Is a difference DeltaV between BE Is a voltage with a positive temperature coefficient, and the temperature coefficient is independent of temperature, deltaV BE After amplification, a voltage value increasing with the increase of temperature can be obtained for compensating the change of the self power output characteristic caused by the change of temperature under the same bias condition of the transistor.
Working principle: radio frequency signal passing through signal input IN 1b Into a radio frequency power amplifier through a capacitor C 1b Then, the signal is input into the input matching network 1b to change the impedance, and the signal is transmitted through the HBT transistor Q 6b Amplifying the signal, passing through the output matching network 1BAfter impedance change, the current passes through a capacitor C 3b Then, by the signal output terminal OUT 1b And outputting.
Inductance L 1b The choke inductor is used for supplying power to the radio frequency amplifying unit;
in the adaptive bias unit, HBT transistor Q 3b Tube and HBT transistor Q 5b The tube forms a mirror current source structure through the HBT transistor Q 5b Post-flow HBT transistor Q 6b Current magnitude and HBT transistor Q 3b The current is proportional to the current. HBT transistor Q 5b The base-emitter junction diode of (2) rectifies the leaked radio frequency power to generate a DC current which is amplified to cause an HBT transistor Q 5b The current of the emitter increases and flows through the resistor R 4b And HBT transistor Q 6b The base current also becomes large. Due to capacitance C 2b Is introduced by HBT transistor Q 5b The leaked radio frequency signal will be shorted to ground. By introducing active device HBT transistors Q 5b V of (2) BE To power tube HBT transistor Q 6b V of (2) BE To compensate for the drop in transconductance of the power tube, thereby achieving a relatively constant transconductance of the power tube. Thus HBT transistor Q 5b V of pipe be Voltage reduction can compensate for HBT transistor Q 6b The upper BE junction voltage decreases as the input power increases.
When the temperature of the power amplifier increases, HBT transistor Q 3b Will increase due to the resistance R 3b Is present, the increased current will flow to HBT transistor Q 4b HBT transistor Q 4b The base current of (a) increases. Via HBT transistor Q 4b After amplification, HBT transistor Q 4b The collector current increases, resulting in HBT transistor Q 5b The base current decreases. HBT transistor Q 5b Emitter current drop, HBT transistor Q caused by temperature rise is suppressed 6b The base current becomes large.
MOS transistor M 1b MOS transistor M 3b Make up of a current mirror, MOS transistor M 2b MOS transistor M 4b Resistance R 1b HBT transistor Q 1b HBT transistor Q 2b Forming current sources, which are mutuallyThe bias, the output of the current source is the input of the current mirror, and the output of the current mirror is the input of the current source, the stable working point is achieved through the excitation of positive feedback,
when MOS transistor M 2b Is increased in gate voltage through MOS transistor M 2b Is an inverting amplifier of MOS transistor M 2b Is reduced, i.e. MOS transistor M 3b The gate voltage of (2) drops and passes through the MOS transistor M 3b Is an inverting amplifier of MOS transistor M 3b The drain voltage of (a) rises, i.e. MOS transistor M 2b And MOS transistor M 4b The gate voltage of (a) rises. The loop is positive feedback.
HBT transistor Q 1b And HBT transistor Q 2b The collector currents are the same and the areas are different, the base-emitter voltages V of both of them BE Is a difference DeltaV between BE Is a voltage with a positive temperature coefficient, and the temperature coefficient is independent of temperature, deltaV BE After amplification, a voltage value which increases with the increase of temperature can be obtained, and the change of the self power output characteristic caused by the temperature change of the transistor under the same bias condition is compensated through the linear change of the bias voltage.
Resistor R 2b For monitoring HBT transistor Q 3b The variation of collector voltage with temperature is measured by resistor R 2b Can adjust the current of MOS transistor M 2b MOS transistor M 4b Resistance R 1b HBT transistor Q 1b HBT transistor Q 2b The output current of the current source is configured to compensate for a change in the self power output characteristic due to a temperature change. MOS transistor M 1b MOS transistor M 5b The same constitution of the current mirror is realized by MOS transistor M 5b The source current outputs the compensated direct current.
Other portions of this embodiment are the same as those of embodiment 1 described above, and thus will not be described again.
Example 3:
this embodiment is described with reference to fig. 3 and 4, which are schematic diagrams of normalized amplitude error versus output power of a radio frequency amplifier, based on any one of embodiments 1 to 2.
Fig. 3 is a graph showing a normalized amplitude error versus output power of a conventional rf power amplifier. Delta is the normalized amplitude error versus output power curve when the temperature is-55 ℃; and ∈r is the normalized amplitude error versus output power curve when the temperature is 25 ℃; the normalized amplitude error versus output power curve is for a temperature of 125 ℃.
FIG. 4 is a graph showing the normalized amplitude error versus output power according to the present invention. Delta is the normalized amplitude error versus output power curve when the temperature is-55 ℃; and ∈r is the normalized amplitude error versus output power curve when the temperature is 25 ℃; the normalized amplitude error versus output power curve is for a temperature of 125 ℃.
Comparing fig. 3 and fig. 4, it can be seen that, compared with the conventional rf power amplifier, the high temperature stability rf power amplifier provided by the invention has a normalized amplitude error variation curve with output power, and the normalized amplitude error variation is significantly smaller at-55 ℃, 25 ℃ and 125 ℃, and the 1dB compression point consistency is higher, and the high temperature stability is better.
Other portions of this embodiment are the same as any of embodiments 1 to 2, and thus will not be described again.
The foregoing description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and any simple modification, equivalent variation, etc. of the above embodiment according to the technical matter of the present invention fall within the scope of the present invention.
Claims (7)
1. A radio frequency power amplifier with high temperature stability comprises a radio frequency amplifying unit; characterized in that a transistor Q of the radio frequency amplifying unit 6b An adaptive bias unit is arranged at the base electrode of the transistor; the self-adaptive bias unit comprises a power compensation unit, a first temperature compensation unit and a second temperature compensation unit; the input end of the first temperature compensation unit is connected with a power supply, and the output end of the first temperature compensation unit is connected with the input end of the second temperature compensation unit; said firstThe output ends of the two temperature compensation units are connected with the input ends of the power compensation units;
the input end of the power compensation unit is connected with a power supply, and the output end of the power compensation unit is connected with the transistor Q 6b Is connected with the base electrode of the transistor;
the power compensation unit is used for rectifying the radio frequency power leaked from the radio frequency amplification unit to the adaptive bias unit to generate a first current, and then regulating the transistor Q according to the first current 6b Finally compensating the transistor Q by adjusting the voltage of the power compensation unit 6b Base of (d) and said transistor Q 6b The linearity of the radio frequency power amplifier is inhibited, and the constant transconductance is realized;
the first temperature compensation unit is used for amplifying the internal voltage difference of the second temperature compensation unit to obtain a voltage value which increases along with the temperature, compensating the power output characteristic of the second temperature compensation unit under the bias condition according to the voltage value, and generating a compensated current to be output to the second temperature compensation unit;
the second temperature compensation unit is used for amplifying the compensated current, generating a second current and outputting the second current to the power compensation unit, and then generating a third current according to the second current and outputting the third current to the transistor Q 6b Finally, according to the third current, adjust the transistor Q 6b Suppressing the base current of transistor Q 6b The base current of (a) increases.
2. The high temperature stable rf power amplifier of claim 1 wherein the first temperature compensation unit comprises a current source unit, a current mirror unit;
the input end of the current mirror unit is connected with a power supply, the output end of the current mirror unit is connected with the input end of the current source unit, and the input end of the second temperature compensation unit is connected;
the output end of the current source unit is connected with the input end of the current mirror unit and the input end of the second temperature compensation unit;
the current source unit and the current mirror unit are mutually biased, and a stable working point is achieved by forming a positive feedback loop.
3. A high temperature stable rf power amplifier according to claim 2, wherein the current mirror unit comprises a transistor M 1b Transistor M 3b Transistor M 5b ；
The transistor M 1b Gate of (c) and the transistor M 3b Is connected to the gate of the current source, the transistor M 1b Is connected with the drain of the transistor M 3b Is connected to the drain of the transistor M 5b Is connected to the drain of the transistor M 1b Source of (c) and said transistor M 1b Is connected with the input end of the current source unit;
the transistor M 3b Gate of (c) and the transistor M 5b Gate of said transistor M 1b Is connected to the source of the current source unit, the transistor M 3b Is connected to a power supply, the transistor M 3b The source electrode of the current source unit is connected with the input end of the current source unit;
the transistor M 5b Is connected to a power supply, the transistor M 5b The output end of the current source unit is connected with the input end of the second temperature compensation unit.
4. A high temperature stable radio frequency power amplifier according to claim 3, wherein said current source unit comprises a transistor M 2b Transistor M 4b Resistance R 1b Transistor Q 1b Transistor Q 2b ；
The transistor M 2b Source of (c) and said transistor M 1b Gate of (d), transistor M 1b Is connected to the source of the transistor M 5b Is connected with the drain of the transistor M 2b And the resistor R 1b Is connected with the input end of the crystalBody tube M 2b Gate of (c) and the transistor M 4b Gate of said transistor M 4b Source of said transistor M 3b Is connected with the source electrode of the transistor;
the transistor M 4b Gate of (c) and the transistor M 4b Is connected to the source of the transistor M 3b Is connected with the source of the transistor M 4b Is connected with the drain electrode of the transistor Q 2b The emitter of the second temperature compensation unit is connected with the input end of the second temperature compensation unit; the transistor M 4b Source of (c) and said transistor M 3b Is connected with the source electrode of the transistor;
the transistor Q 2b Base of (d) and said transistor Q 2b Is not equal to the collector of the transistor Q 1b Is not equal to the collector of the transistor Q 1b Is connected with the base and the ground of the transistor Q 2b Is connected with the collector of the transistor Q 1b Is not equal to the collector of the transistor Q 1b Is connected with the base and the ground of the transistor Q 2b The emitter of the second temperature compensation unit is connected with the input end of the second temperature compensation unit;
the transistor Q 1b Base of (d) and said transistor Q 1b Is connected with the collector and the ground of the transistor Q 1b Emitter of (c) and said resistor R 1b Is connected with the output end of the power supply.
5. The high temperature stable rf power amplifier of claim 4 wherein the first temperature compensation unit further comprises an acquisition unit; the acquisition unit comprises a resistor R 2b ；
The resistor R 2b Is connected to the input terminal of the transistor M 4b Is connected with the drain electrode of the transistor Q 2b The resistance R is between the emitters of 2b Is connected to the output terminal of the transistor M 5b Between the source of the first temperature compensation unit and the input of the first temperature compensation unit.
6. The high temperature stable rf power amplifier of claim 1 wherein the second temperature compensation unitIncluding transistor Q 3b Transistor Q 4b Resistance R 3b ；
The transistor Q 3b The collector of the transistor Q is connected with the output end of the first temperature compensation unit 3b The collector-emitter of (2) and the resistor R connected to ground 3b Is connected to the input terminal of the transistor Q 3b The base electrode of the first temperature compensation unit is connected with the input end of the power compensation unit and the output end of the first temperature compensation unit;
the transistor Q 4b Is connected to the collector of the transistor Q 3b Between the base of the transistor Q and the input of the power compensation unit 4b Is connected to the transistor Q 3b Emitter of (c) and said resistor R 3b Is connected with the input end of the transistor Q 4b Is connected to ground.
7. The high temperature stable rf power amplifier of claim 6, wherein the power compensation unit comprises a transistor Q 5b Capacitance C 2b Resistance R 4b ；
The transistor Q 5b Base of (d) and said transistor Q 5b Is not equal to the collector of the transistor Q 3b The base of the first temperature compensation unit, the output end of the transistor Q 3b Is connected with the collector of the transistor Q 5b Is connected to a power supply, the transistor Q 5b Emitter and resistor R of (2) 4b Is connected with the input end of the power supply;
the resistor R 4b And the output terminal of the transistor Q 6b Is connected to the base of the transistor.
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Address after: Floor 9, block a, Xiewei center, No. 333 Dehua Road, hi tech Zone, Chengdu, Sichuan 610000 Patentee after: Chengdu Mingyi Electronic Technology Co.,Ltd. Country or region after: China Address before: Floor 9, block a, Xiewei center, No. 333 Dehua Road, hi tech Zone, Chengdu, Sichuan 610000 Patentee before: Chengdu Mingyi Electronic Technology Co.,Ltd. Country or region before: China |