CN116356293A - 气体供应单元和包括气体供应单元的衬底处理设备 - Google Patents
气体供应单元和包括气体供应单元的衬底处理设备 Download PDFInfo
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Abstract
公开了一种气体供应单元。示例性气体供应单元包括设置有多个喷射孔的上板,该多个喷射孔包括中心喷射孔和多个外部喷射孔;分隔器板,其构造和布置成抵靠着上板,以引导来自喷射孔的气体流;流体联接到中心注射孔的第一气体管线;以及流体联接到多个外部注射孔的多个第二气体管线。多个外部喷射孔围绕中心喷射孔同心布置。分隔器板设置有与中心注射孔流体连通的中心通孔,并设置有朝向上板延伸的多个突起,从而产生多个区域,每个区域与其中一个外部注射孔流体连通。
Description
技术领域
本公开总体涉及气体供应单元和包括该气体供应单元的衬底处理设备,更具体地,涉及能够控制衬底的特定部分上的膜沉积的气体供应单元和包括该气体供应单元的衬底处理设备。
背景技术
在制造半导体器件的过程中,随着电路线宽的减小,需要更精确的过程控制。在膜沉积过程中,已经进行了各种努力来实现高膜均匀性。
实现均匀膜沉积的主要因素之一是气体供应单元。喷淋板用于普通的气体供应单元。喷淋板具有以同轴形状将气体均匀供应到衬底上的能力。然而,由于例如排气端口和闸阀中的气体流动,衬底边缘部分的膜厚度和衬底中心部分的膜厚度可能不相同。
本部分中阐述的任何讨论,包括对问题和解决方案的讨论,已经包括在本公开中,仅仅是为了提供本公开的背景,并且不应被认为是承认任何或所有的讨论在做出本发明时是已知的,或者以其他方式构成现有技术。
发明内容
提供本发明内容是为了以简化的形式介绍一些概念。这些概念在以下公开的示例实施例的详细描述中被进一步详细描述。本发明内容不旨在标识所要求保护的主题的关键特征或必要特征,也不旨在用于限制所要求保护的主题的范围。
根据本公开的示例性实施例,提供了一种气体供应单元。气体供应单元包括设置有多个喷射孔的上板,多个喷射孔包括一个中心喷射孔和多个外部喷射孔;分隔器板,其构造和布置成抵靠着上板,以引导来自喷射孔的气体流;流体联接到中心注射孔的第一气体管线;以及流体联接到多个外部注射孔的多个第二气体管线。多个外部喷射孔围绕中心喷射孔同心布置。分隔器板设置有与中心注射孔流体连通的中心通孔,并且设置有朝向上板延伸的多个突起,从而产生多个区域,每个区域与其中一个外部注射孔流体连通。
在各种实施例中,第一液态气体管线和第一干燥气体管线可以配置成连接到第一气体管线的上游。
在各种实施例中,气体供应单元可以还包括配置为连接到第二气体管线的上游的第二液态气体管线和第二干燥气体管线。
在各种实施例中,至少一个区域可以设置有大致梯形的形状。
在各种实施例中,区域的数量可以是四个,其中一个区域的尺寸可以大于其他三个区域的尺寸。
在各种实施例中,突起可以从中心到外部径向布置。
在各种实施例中,气体供应单元可以还包括设置有多个孔的喷淋板,以将气体流引导到气体供应单元外部,其中喷淋板附接到上板的下表面。
在各种实施例中,气体供应单元可以还包括连接到上板的上表面的绝缘体,其中绝缘体可以设置有与中心注射孔流体连通的中心孔,并且可以设置有多个外部孔,每个外部孔与外部注射孔流体连通。
在各种实施例中,气体供应单元可以还包括设置在分隔器板的下表面和喷淋板的上表面之间的气体流动通道,并且配置为与中心通孔和区域的周边流体连通。
在各种实施例中,气体供应单元可以还包括设置在气体流动通道中的气体分隔器。
在各种实施例中,气体分隔器可以是环形的。
在各种实施例中,气体供应单元可以还包括多个气体分流器,每个气体分流器与外部孔流体连通。
在各种实施例中,气体供应单元可以还包括控制器,其配置为控制气体分流器的流量。
根据本公开的示例性实施例,可以提供一种衬底处理设备。衬底处理设备可以包括反应室;位于反应室中的基座,其构造和布置成支撑衬底,其中该设备可以包括气体供应单元,并且喷淋板可以构造和布置成面对基座。
在各种实施例中,衬底处理设备可以还包括设置在反应室的侧壁中的衬底传输管,其中区域中的最大区域可以设置在衬底传输管的附近。
在各种实施例中,衬底处理设备可以还包括设置在反应室的侧壁中的真空端口,其中区域中的最大区域可以设置在真空端口的附近。
附图说明
当结合以下说明性附图考虑时,通过参考详细描述和权利要求,可以获得对本公开的示例性实施例的更完整的理解。
图1是可用于本发明实施例的用于沉积膜的PECVD(等离子体增强化学气相沉积)设备的示意图。
图2是示出包括分隔器板的气体供应单元的示意图。
图3是示出包括气体管线的气体供应单元的示意图。
图4是可用于本发明另一实施例的PECVD设备的示意图。
图5A是沿着图4的线A-A’截取的剖视图。
图5B是沿着图4的线B-B’截取的剖视图。
图5C是沿着图4的线C-C’截取的剖视图。
图6A至6C是另一实施例的剖视图。
图7A至7C是另一实施例的剖视图。
应当理解,附图中的元件是为了简单和清楚而示出的,并不一定是按比例绘制的。例如,图中一些元件的尺寸可能相对于其他元件被夸大,以帮助理解本公开的所示实施例。
具体实施方式
尽管下面公开了某些实施例和示例,但本领域技术人员将理解,本公开延伸到具体公开的实施例和/或本公开的用途及其明显的修改和等同物之外。因此,意图是本公开的范围不应被这里描述的特定实施例所限制。
本文呈现的图示并不意味着是任何特定材料、设备、结构或器件的实际视图,而仅仅是用于描述本公开的实施例的表示。
在本公开中,“气体”可以包括在常温常压下为气体的材料、蒸发的固体和/或蒸发的液体,并且可以由单一气体或气体混合物构成,这取决于情况。除了过程气体之外的气体,即不经过气体供应单元(例如喷淋板等)而引入的气体,可以用于例如密封反应空间,并且可以包括密封气体,比如稀有气体或其他惰性气体。术语惰性气体指的是在可感知的程度上不参与化学反应的气体和/或当施加等离子体功率时能够激发前体的气体。术语前体和反应物可以互换使用。
如本文所用,术语“衬底”可以指可以使用的或者可以在其上形成器件、电路或膜的任何一种或多种底层材料。
如本文所用,术语“膜”和“薄膜”可以指通过本文公开的方法沉积的任何连续或不连续的结构和材料。例如,“膜”和“薄膜”可以包括2D材料、纳米棒、纳米管或纳米颗粒,或者甚至部分或全部分子层或者部分或全部原子层或者原子和/或分子的簇。“膜”和“薄膜”可包括具有针孔的材料或层,但仍至少部分连续。
该过程可以使用任何合适的设备来执行,例如包括图1所示的设备。图1是PECVD设备的示意图。在该图中,通过在反应室100的内部提供一对平行且彼此面对的导电平板电极30、110,将高频RF功率(例如,13.56MHz或27MHz)施加到上平板电极30的一侧,并将下平板电极110的另一侧电接地,可以在电极之间激发等离子体。温度调节器可以设置在基座110(下电极)中,并且放置在其上的衬底的温度可以在给定温度下保持恒定。上平板电极30也可以用作喷淋板,并且气体可以通过喷淋板或上平板电极30被引入到反应室100中。此外,在反应室110中,可以设置排气管线140,反应室100内部的气体可以通过排气管线140排出。
此外,可以提供设置在反应室100下方的转移室150,并且可以提供转移区域。可以设置闸阀130和晶片传输管135,通过它们将晶片转移到转移室150中或从其转移。在一些实施例中,远程等离子体单元可用于激发气体。
在一些实施例中,可以使用多室模块,例如两个或四个室或隔间,用于处理彼此靠近设置的晶片。
本领域技术人员可以理解,该设备包括一个或多个控制器,该控制器被编程或以其他方式配置为进行本文其他地方描述的沉积和反应器清洁过程。如本领域技术人员将理解,控制器可以与反应器的各种电源、加热系统、泵、机器人和气流控制器或阀通信。
另外参照图1和图2,示出了气体供应单元1。气体供应单元1包括上板3,该上板3设置有中心喷射孔5和多个外部喷射孔6、7、8、9。外部喷射孔6、7、8、9围绕中心喷射孔5同心布置。
气体供应单元1还包括分隔器板10,该分隔器板10配置和布置成抵靠着上板3。分隔器板10具有与中心注射孔5流体连通的中心通孔15和多个区域16、17、18、19,每个区域与外部注射孔6、7、8、9流体连通。
气体供应单元1还包括多个突起25、26、27、28,这些突起从分隔器板10朝向上板3延伸。突起25、26、27、28配置成产生区域16、17、18、19,并且可以从中心到外部径向布置。所有区域16、17、18、19可以具有基本相同的梯形形状,或者某个区域的尺寸可以大于其他区域的尺寸。第一区域16可以设置在晶片传输管135的附近。第二区域18可以设置在真空端口140的附近。
气体供应单元1还可以包括具有多个孔的喷淋板30,以将气体流导向衬底。喷淋板30可以附接到上板3的下表面。
气体供应单元1还可以包括绝缘体40,其连接到上板3的上表面。绝缘体40可以包括与中心喷射孔5流体连通的中心孔45和与外部喷射孔6、7、8、9流体连通的多个外部孔46、47、48、49。
气体供应单元1还可以包括气体流动通道60,其设置在分隔器板10的下表面和喷淋板30的上表面之间,并且配置成与中心通孔15和区域16、17、18、19的周边流体连通。
另外参照图3,气体供应单元1包括第一气体管线80,其流体联接到中心孔45和中心注射孔5。第一气体管线80可以连接到第一液态气体管线90和第一干燥气体管线91的下游。气体供应单元1还包括多个第二气体管线82、83、84、85,其流体联接到外部孔46、47、48、49和外部注射孔6、7、8、9。第二气体管线82、83、84、85可以连接到公共气体管线81。公共气体管线81可以连接到第二液态气体管线100和第二干燥气体管线101的下游。第一气体管线80可以具有第一控制旋钮,而第二气体管线82、83、84、85可以具有第二控制旋钮。使用单独的控制旋钮可以允许独立控制中心和边缘处的反应性气体的总流量和分压。
气体供应单元1还可以包括多个气体分流器70,其分别与外部孔46、47、48、49流体连通。
可以将作为用于形成碳层的液态气体的碳前体引入反应室。示例性前体包括由式CxHyNz表示的化合物,其中x是大于或等于2的自然数,y是自然数,z是零或自然数。例如,x可以在约2至约15的范围内,y可以在约4至约30的范围内,z可以在约0至约10的范围内。前体可以包括具有两个或更多个碳原子和一个或多个氢原子的链状或环状分子,例如由上式表示的分子。作为特定示例,前体可以是或包括一个或多个环状(例如芳族)结构和/或具有至少一个双键的化合物,在一些情况下包括两个或更多个或者三个或更多个双键。作为特定示例,碳前体可以是或包括1,3,5-三甲基苯或2,4,6-三甲基吡啶。
作为干燥气体的一种或多种惰性气体可以包括例如氩、氦和氮中的一种或多种的任意组合。惰性气体可用于点燃等离子体或有助于点燃反应室内的等离子体,从反应室中吹扫反应物和/或副产物,和/或用作载气以帮助将前体输送到反应室。用于点燃和维持等离子体的功率可在约50W至约8000W的范围内。功率的频率可在约2.0MHz至约27.12MHz的范围内。
气体供应单元可以包括控制器200,控制器200配置为控制气体分流器70的流量。通过调节流量,可以控制每个区域16、17、18、19中的气体量。因此,可以选择性地控制在特定外围部分中形成的膜的均匀性或特性。例如,可以选择性地控制区域16和18中沉积的膜的均匀性。
另外参照图4,气体供应单元1可以还包括设置在气体流动通道60中的气体分隔器170。如图5所示,气体分隔器170可以是环形的。气体分隔器170可以进一步提高中心和边缘之间的流量的可控性。
图6A至6C是另一实施例的剖视图。在该实施例中,突起125、126、127、128配置成产生区域116、117、118、119,并且可以从中心到边缘径向布置。突起125、126、127、128的使用可以在区域116、117、118和119之间产生更多的流量差异。
图7A至7C是另一实施例的剖视图。在该实施例中,气体分隔器170可以还包括气体分隔器突起175、176、177、178,它们从气体分隔器170到边缘径向布置。气体分隔器突起175、176、177、178可以设置成与突起125、126、127、128重叠。气体分隔器突起175、176、177、178的使用可以在区域116、117、118和119之间产生更多的流量差异。
上述公开的示例实施例不限制本发明的范围,因为这些实施例仅仅是本发明实施例的示例。任何等同的实施例都在本发明的范围内。实际上,除了在此示出和描述的那些之外,本公开的各种修改,例如所描述的元件的可替代的有用组合,对于本领域技术人员来说从描述中会变得显而易见。这种修改和实施例也旨在落入所附权利要求的范围内。
Claims (17)
1.一种气体供应单元,包括:
设置有多个注射孔的上板,多个注射孔包括一个中心注射孔和多个外部注射孔;
分隔器板,其构造和布置成抵靠着上板,以引导来自喷射孔的气体流;
流体联接到中心注射孔的第一气体管线;以及
流体联接到多个外部注射孔的多个第二气体管线;
其中,多个外部喷射孔同心地围绕中心喷射孔布置;并且
其中,分隔器板设置有与中心注射孔流体连通的中心通孔,并且设置有朝向上板延伸的多个突起,从而产生多个区域,每个区域与其中一个外部注射孔流体连通。
2.根据权利要求1所述的气体供应单元,还包括配置为连接到所述第一气体管线的上游的第一液态气体管线和第一干燥气体管线。
3.根据权利要求1所述的气体供应单元,还包括配置为连接到所述第二气体管线的上游的第二液态气体管线和第二干燥气体管线。
4.根据权利要求1所述的气体供应单元,其中,所述区域中的至少一个设置有大致梯形的形状。
5.根据权利要求1所述的气体供应单元,其中,所述区域的数量为四个,其中一个区域的尺寸大于其他三个区域的尺寸。
6.根据权利要求1所述的气体供应单元,其中,所述突起从中心到外部径向布置。
7.根据权利要求1所述的气体供应单元,还包括喷淋板,其设置有多个孔以将气体流引导到所述气体供应单元的外部,其中喷淋板附接到所述上板的下表面。
8.根据权利要求1所述的气体供应单元,还包括连接到所述上板的上表面的绝缘体,其中绝缘体设置有与所述中心喷射孔流体连通的中心孔,并且设置有多个外部孔,每个外部孔与所述外部喷射孔流体连通。
9.根据权利要求7所述的气体供应单元,还包括气体流动通道,其设置在所述分隔器板的下表面和所述喷淋板的上表面之间,并且配置为与所述中心通孔和所述区域的周边流体连通。
10.根据权利要求9所述的气体供应单元,还包括设置在所述气体流动通道中的气体分隔器。
11.根据权利要求10所述的气体供应单元,其中,所述气体分隔器是环形的。
12.根据权利要求11所述的气体供应单元,还包括从所述气体分隔器到边缘径向布置的气体分隔器突起。
13.根据权利要求8所述的气体供应单元,还包括多个气体分流器,每个气体分流器与所述外部孔流体连通。
14.根据权利要求13所述的气体供应单元,还包括控制器,其配置为控制所述气体分流器的流量。
15.一种衬底处理设备,包括:
反应室;
位于反应室中的基座,其构造和布置成支撑衬底,其中该设备包括根据权利要求1所述的气体供应单元,并且喷淋板构造和布置成面对基座。
16.根据权利要求15所述的衬底处理设备,还包括设置在所述反应室的侧壁中的衬底传输管,其中,所述区域中的最大区域设置在衬底传输管的附近。
17.根据权利要求14所述的衬底处理设备,还包括设置在所述反应室的侧壁中的真空端口,其中,所述区域中的最大区域设置在真空端口的附近。
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