CN116356266A

CN116356266A - Vacuum coating process cavity and PVD film thickness uniformity adjusting method

Info

Publication number: CN116356266A
Application number: CN202310342303.0A
Authority: CN
Inventors: 请求不公布姓名
Original assignee: Guangdong Lyric Robot Intelligent Automation Co Ltd
Current assignee: Guangdong Lyric Robot Automation Co Ltd
Priority date: 2023-03-31
Filing date: 2023-03-31
Publication date: 2023-06-30

Abstract

The application relates to the technical field of coating equipment, in particular to a vacuum coating process cavity and a PVD film thickness uniformity adjusting method, wherein the vacuum coating process cavity comprises: the fixed box body is internally provided with a conveying space for conveying the bearing bracket; the target is positioned above the bearing bracket; the sputtering area is formed between the target and the bearing bracket, and the adjusting device is positioned between the target and the bearing bracket; the adjusting device is provided with a plurality of shielding parts, and the range of the sputtering area can be adjusted by adjusting at least part of the shielding parts. According to the vacuum coating process cavity, the range corresponding to the sputtering area of the target can be adjusted by adjusting the relative position of the adjusting device and the target, so that the film deposition thickness of the silicon wafer in different areas on the bearing bracket in the sputtering process can be influenced, and the film thickness of the silicon wafer on the bearing bracket can be high in consistency.

Description

Vacuum coating process cavity and PVD film thickness uniformity adjusting method

Technical Field

The application relates to the technical field of coating equipment, in particular to a vacuum coating process chamber and a PVD film thickness uniformity adjusting method.

Background

The working principle of magnetron sputtering is that particles collide with the surface of a target material, magnetron sputtering plasmas deposit a film layer on the surface of a silicon wafer, and the phenomenon that film thicknesses of two end areas and a middle area of a silicon wafer are not uniform is transported by a carrier plate in the film plating process of the existing PVD (physical vapor deposition) equipment, so that the technical problem of difference in photoelectric performance of the silicon wafer is caused.

If the film thickness is 120nm, the film thickness of the film coating areas at the two ends of the cathode is about 122nm, the film thickness of the film coating area at the middle is about 118nm, and the film thickness of the silicon wafer distributed at the two ends of the cathode target is about 4nm thicker than the film thickness of the middle area in the film coating process, so that the uniformity of the whole film thickness is affected, and a device or a method for solving or effectively improving the problem is needed.

Disclosure of Invention

The invention aims to provide a vacuum coating process chamber and a PVD film thickness uniformity adjusting method, so as to solve the technical problem that film thicknesses of different areas of a silicon wafer in a coating process are uneven to a certain extent in the prior art.

The application provides a vacuum coating process chamber, include: the fixed box body is internally provided with a conveying space for conveying the bearing bracket;

the target is arranged in the fixed box body and is positioned above the bearing bracket;

the adjusting device is arranged on the fixed box body, a sputtering area is formed between the target and the bearing bracket, and the adjusting device is positioned between the target and the bearing bracket;

the adjusting device is provided with a plurality of shielding parts, the range of the sputtering area can be adjusted by adjusting at least part of the shielding parts in the plurality of shielding parts, and the range of the sputtering area influences the thickness of a film layer deposited on a workpiece to be coated.

In the above technical solution, further, the adjusting device includes:

the supporting piece is connected with the fixed box body;

the baffle is arranged on the supporting piece and is the shielding part;

the retaining piece is movably connected with the supporting piece, and the retaining piece is locked with the supporting piece through the retaining piece.

In any of the above technical solutions, further, the blocking piece is in a strip shape, the blocking piece is provided with a sliding groove, and the locking piece passes through the sliding groove and is connected with the supporting piece; the length of the sliding groove extends along the conveying direction of the bearing bracket.

In any of the above technical solutions, further, the number of the blocking pieces is plural, and the plurality of blocking pieces are sequentially arranged along the length direction of the supporting piece.

In any of the above technical solutions, further, a plurality of mark scales are provided on an upper surface of each baffle at equal intervals, and the mark scales are sequentially arranged along a length direction of the baffle.

In any of the above technical solutions, further, the target is in a strip shape, and the length of the target extends along a first direction, and the first direction is perpendicular to the travelling direction of the bearing bracket.

In any of the above technical solutions, further, the supporting member is in a strip shape, and the supporting member is disposed parallel to the target;

one end of the supporting piece is provided with a first installation part, the other end of the supporting piece is provided with a second installation part, the first installation part and the second installation part are provided with the baffle, and the part of the supporting piece except the first installation part and the second installation part is not provided with the baffle.

In any of the above technical solutions, further, a plurality of workpieces to be coated are disposed on the carrying bracket; the bearing bracket and the workpiece to be coated are positioned below the baffle.

In any of the above technical solutions, further, the distance between any two adjacent marked scales is 5mm, each baffle extends 5mm-10mm relative to the supporting piece, and the thickness of the film layer of the workpiece to be coated below the baffle is thinned by 2nm-5nm.

The application also provides a PVD film thickness uniformity adjusting method which comprises the steps of and is applicable to the vacuum coating process cavity according to any one of the technical schemes, so that the PVD film thickness uniformity adjusting method has all the beneficial technical effects of the vacuum coating process cavity, and the description is omitted.

The PVD film thickness uniformity adjusting method comprises the following steps:

s1, dividing a target into areas; sequentially defining a first sputtering zone, a second sputtering zone and a third sputtering zone for the target along the length direction of the target;

s2, dividing the bearing bracket into areas; a first bearing area, a second bearing area and a third bearing area are sequentially defined for the bearing bracket along the length direction of the target material; the first bearing area, the second bearing area and the third bearing area are all provided with a workpiece to be coated;

s3, detecting the thickness of the film of the workpiece to be coated; detecting the film thickness of the workpiece to be coated on the first bearing area, the film thickness of the workpiece to be coated on the second bearing area and the film thickness of the workpiece to be coated on the third bearing area respectively;

s4, operating the adjusting device; the adjusting device comprises a plurality of baffle plates which can move relative to the target material, and the baffle plates at corresponding positions are correspondingly adjusted according to the detection result of the S3;

s5, rechecking the thickness of the film layer; after the baffle plate is adjusted, the film coating operation is carried out on the workpieces to be coated in the next batch again, the film thickness of the workpieces to be coated is detected again after the film coating is finished, and whether the difference value of the film thicknesses of the workpieces to be coated on the first bearing area, the workpieces to be coated on the second bearing area and the workpieces to be coated on the third bearing area meets the requirement is compared;

s6, performing coating operation in batches; in S5, if the detection result does not meet the requirement, repeating the step S4; and if the detection result meets the requirement, coating the to-be-coated workpieces on the bearing bracket in batches.

Compared with the prior art, the beneficial effects of this application are:

the vacuum coating process chamber that this application provided includes: the fixed box body is internally provided with a conveying space for conveying the bearing bracket; the target is arranged in the fixed box body and is positioned above the bearing bracket; the adjusting device is arranged on the fixed box body, a sputtering area is formed between the target and the bearing bracket, and the adjusting device is positioned between the target and the bearing bracket; the adjusting device is provided with a plurality of shielding parts, and the range of a sputtering area can be adjusted by adjusting at least part of the shielding parts, so that the range of the sputtering area influences the thickness of a film deposited on a workpiece to be coated.

According to the vacuum coating process cavity, the range corresponding to the sputtering area of the target can be adjusted by adjusting the relative position of the adjusting device and the target, so that the film deposition thickness on the workpiece to be coated in different areas on the bearing bracket in the sputtering process can be influenced, and the film thickness of the workpiece to be coated on the bearing bracket can be highly consistent, so that the yield and the processing efficiency in the whole coating process are improved.

The PVD film thickness uniformity adjusting method is simple and quick in adjusting operation process, high in adjusting accuracy and capable of improving the uniformity of the thickness of the film coating layer, further improving the quality of the film coating layer and improving the yield.

Drawings

In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic structural diagram of an adjusting device of a vacuum coating process chamber according to an embodiment of the present application;

fig. 2 is a schematic structural diagram of a vacuum coating process chamber according to an embodiment of the present disclosure;

FIG. 3 is an enlarged schematic view of FIG. 1 at A;

fig. 4 is an enlarged schematic view of fig. 2 at B.

Reference numerals:

1-fixed box, 2-target, 3-adjusting device, 301-support piece, 302-separation blade, 3021-sliding groove, 3022-mark scale, 303-retaining member, 4-bearing bracket, a-first direction.

Detailed Description

The following description of the embodiments of the present application will be made apparent and fully in view of the accompanying drawings, in which some, but not all embodiments of the invention are shown.

The components of the embodiments of the present application, as generally described and illustrated in the figures herein, may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present application, as provided in the accompanying drawings, is not intended to limit the scope of the application, as claimed, but is merely representative of selected embodiments of the application.

All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.

In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.

A vacuum coating process chamber and a PVD film thickness uniformity adjustment method according to embodiments of the present application are described below with reference to fig. 1 to 4.

Referring to fig. 1 to 4, an embodiment of the present application provides a vacuum coating process chamber, where the vacuum coating process chamber includes a fixed box 1, a target 2 and an adjusting device 3, a cavity is formed inside the fixed box 1 and is used for conveying a bearing bracket 4, and the bearing bracket 4 is used for bearing a workpiece to be coated, which needs to be coated, in this embodiment, the workpiece to be coated may be a silicon wafer. The target material 2 and the adjusting device 3 are both arranged in the fixed box body 1, the target material 2 is positioned above the carrier plate, the adjusting device 3 is positioned between the target material 2 and the carrier plate, the adjusting device 3 is provided with a plurality of shielding parts, when the vacuum coating equipment is started, the surface of the target material 2 is bombarded to generate sputtering, a sputtering area is formed below the target material 2, particles in the sputtering area are deposited on the surface of a workpiece to be coated to form a film layer, and the range of the sputtering area can be adjusted by adjusting at least part of shielding parts in the plurality of shielding parts, so that the deposition condition on the workpiece to be coated is influenced, and the uniformity of the thickness of the film layer on the workpiece to be coated is improved.

The vacuum coating process chamber that this application provided, fixed box 1 plays stable support to target 2 and adjusting device 3, bear the carrier 4 that has the silicon chip at the in-process of carrying in fixed box 1, target 2 is fixed 1 position relatively to fixed box, the distance that target 2 was born carrier 4 relatively is the same, need not adjust target 2 relative fixed box 1 position, ensure the stability of target 2, thereby help guaranteeing the homogeneity to the coating film rete of a plurality of silicon chips on carrying carrier 4, and then ensure the stability of the coating film quality of the coating apparatus who uses this vacuum coating process chamber.

Specifically, the fixed box 1 includes the bounding wall that is enclosed by a plurality of wallboards and establishes, in the wallboard that two of a plurality of wallboards are parallel to each other and set up in the face, one of them wallboard is provided with the import, and another wallboard is provided with the export, and it gets into in the fixed box 1 to bear bracket 4 by the import, and it leaves fixed box 1 to bear bracket 4 through the export after treating coating film work piece coating film.

It should be noted that, the fixed box 1 may be formed with a plurality of film coating cavities, and each film coating cavity is provided with the target 2 and the adjusting device 3, that is, the film thickness of the silicon wafer can be adjusted in each film coating cavity of the fixed box 1, so that the film thickness difference of each silicon wafer can be minimized or meet the requirements.

Preferably, the number of targets 2 in each coating cavity is at least one, but not limited to two, and the number of the adjusting devices 3 in each coating cavity is the same as the number of the targets 2, and one adjusting device 3 is correspondingly arranged below each target 2.

Further, the vacuum coating process chamber further comprises: the vacuum pump comprises an air extracting device and a power supply (not shown in the figure), wherein the air extracting device at least comprises a pump group, a mechanical pump, a molecular pump and the like and is used for vacuumizing the internal environment of the fixed box body 1, the power supply is arranged in the fixed box body 1 and is connected with power supply equipment outside the fixed box body 1 and used for forming an electric field in the fixed box body 1 so as to meet the condition of sputtering coating. The side wall of the fixed box body 1 is provided with an air injection port, the air injection port is connected with an air source, the air source can be specifically an argon storage tank, argon is introduced into the fixed box body 1 through the air injection port, and after the power is turned on. The argon ionization generates plasma, and the plasma bombards the surface of the target material 2 to generate sputtering, so that the silicon wafer is coated.

Further, the target 2 is in a strip shape, the target 2 is arranged in the fixed box 1 through the bracket, the target 2 extends in the fixed box 1 along a first direction a, and the first direction a is specifically a direction perpendicular to the conveying direction of the bearing bracket 4.

Further, the adjusting device 3 includes: the support 301, the separation blade 302 and the retaining member 303, wherein, support 301 is connected with fixed box 1, and separation blade 302 is the shielding part of adjusting device 3, and the quantity of separation blade 302 is a plurality of, and a plurality of separation blades 302 all slidable set up in support 301, through the position of adjusting separation blade 302 relative support 301, can adjust the scope of sputtering region, use retaining member 303 to lock separation blade 302 and support 301 after the regulation is accomplished, can treat the coating film work piece and carry out the coating film operation.

Further, the supporting member 301 has a strip-shaped flat plate structure or a sheet structure, the length direction of the supporting member 301 extends along the first direction a, the plurality of blocking sheets 302 are arranged on the supporting member 301 along the first direction a in close proximity to each other, and the supporting member 301 can stably support the plurality of blocking sheets 302, so as to ensure the stability of the relative position of each blocking sheet 302 and the target 2. Preferably, the baffle plates 302 have rectangular sheet structures, the length direction of the baffle plates 302 extends along the conveying direction of the bearing bracket 4, a sliding groove 3021 is formed in each baffle plate 302, a connecting hole is formed in the supporting member 301, the baffle plates 302 can be connected with the supporting member 301 by penetrating the sliding groove 3021 and the connecting hole through bolts or other types of fasteners, the position of the baffle plates 302 relative to the target 2 can be adjusted by adjusting the position of the fasteners relative to the sliding groove 3021, the corresponding range of the sputtering area is adjusted, the locking member 303 can be a locking nut matched with the bolts, after adjustment is completed, the locking member 303 is screwed with the bolts, the baffle plates 302 and the supporting member 301 are locked, and the influence on the quality of subsequent coating films due to the fact that the baffle plates 302 are shifted after adjustment of the baffle plates 302 is avoided.

As shown in fig. 2 and fig. 4, the length direction of each sliding groove 3021 extends along the conveying direction of the carrier 4, the baffle 302 is adjusted forward along the conveying direction of the carrier 4, the baffle 302 is close to the target 2, at this time, part of the sputtering area is blocked by the baffle 302, and the part of the sputtering area blocked corresponds to the thin film thickness formed on the silicon wafer and is thinner than other parts which are not blocked; the shutter 302 is adjusted backward, the shutter 302 is away from the target 2, and the sputtering area is enlarged or restored to an unobscured state.

Further, the support 301 is disposed parallel to the target 2, and the plurality of blocking pieces 302 are disposed on the support 301 in two parts, specifically, one end of the support 301 is provided with the plurality of blocking pieces 302, the plurality of blocking pieces 302 are sequentially arranged next to each other, the other end of the support 301 is provided with the other plurality of blocking pieces 302, and similarly, the blocking pieces 302 are sequentially arranged next to each other. The baffle plates 302 at two ends of the support 301 are also arranged corresponding to two ends of the target 2, when sputtering coating is performed, as shown in fig. 1, sputtering areas corresponding to two ends of the target 2 are two ends of the bearing bracket 4 distributed along the first direction a, in the actual coating process, a plurality of silicon wafers are arranged on the bearing bracket 4 along the first direction a and the conveying direction of the bearing bracket 4, preferably, the plurality of silicon wafers are distributed on the bearing bracket 4 in a matrix manner, and the film layers of the part of the silicon wafers corresponding to two ends of the target 2 on the bearing bracket 4 are slightly thicker than the film layer thickness of the part of the silicon wafers corresponding to the middle section of the target 2, therefore, the baffle plates 302 are correspondingly arranged on the part of the two ends of the target 2, and the thickness of the part of the film layer coated on the two ends of the bearing bracket 4 distributed along the first direction a can be reduced by adjusting the shielding range of the baffle plates 302, so that the thickness of each silicon wafer layer coated to the maximum extent can be kept consistent.

Preferably, the number of the blocking pieces 302 at both ends of the supporting member 301 is 2-6, and the number of the blocking pieces 302 at both ends of the supporting member 301 may be the same or different.

Further, the upper surface of each of the blocking pieces 302 is provided with a plurality of mark scales 3022, and the mark scales 3022 are sequentially arranged at equal intervals along the length direction of the blocking piece 302.

Preferably, the distance between any two adjacent mark scales 3022 is 5mm, and each time the baffle plate 302 stretches by 5mm-10mm, the thickness of the film layer corresponding to the area on the silicon wafer is thinned by 2nm-5nm, so that the thickness of the film layer of the corresponding silicon wafer can be adjusted by adjusting the stretching amount of the baffle plate 302.

It should be noted that, by adjusting one of the baffle plates 302, the film thickness of the baffle plate 302 at the corresponding position on the carrier bracket 4 and the silicon wafer can be adjusted, and on this basis, the film thickness of the silicon wafer corresponding to the carrier bracket 4 under a certain width range can be adjusted by selecting the number of the baffle plates 302 to perform the above adjustment. In this embodiment, the mark scale 3022 is preset on the baffle 302, when one or a plurality of baffle 302 are adjusted, the mark scale 3022 can be used to conveniently and rapidly adjust the appropriate elongation, so that the need of measuring and determining the adjustment amount during each adjustment is avoided, the difficulty and complexity of adjusting the baffle 302 are reduced, the adjustment precision is effectively improved, the adjustment efficiency of the adjusting device is improved, and the adjustment precision can be ensured, so that the coating efficiency of the vacuum coating process chamber and the quality of the coating layer can be improved.

In summary, according to the vacuum coating process chamber provided by the application, the range corresponding to the sputtering region of the target 2 can be adjusted by adjusting the relative position of the adjusting device 3 and the target 2, so that the deposition thickness of the film layer on the silicon wafer in different regions on the bearing bracket 4 in the sputtering process can be influenced, and the uniformity of the height of the film layer thickness of the silicon wafer on the bearing bracket 4 can be realized, so that the yield and the processing efficiency in the whole coating process can be improved.

The embodiment of the application also provides a PVD film thickness uniformity adjusting method, which comprises and is applicable to the vacuum coating process chamber described in the above embodiment, so that the PVD film thickness uniformity adjusting method has all the beneficial technical effects of the vacuum coating process chamber, and the same technical features and beneficial effects are not repeated.

Specifically, the PVD film thickness uniformity adjustment method comprises the following steps:

s1, dividing a target material 2 into areas; the target 2 is sequentially delimited along the length direction of the target 2 by a first sputtering region, a second sputtering region, and a third sputtering region.

Specifically, as shown in fig. 1, along the first direction a, that is, the length direction of the target 2, the target 2 is divided into a first sputtering zone, a second sputtering zone and a third sputtering zone from left to right, and it should be noted that, the defining of the sputtering zone for the target 2 is actually for subsequent detection and comparison, which does not mean that the target 2 is actually segmented.

S2, dividing the bearing bracket 4 into areas; a first bearing area, a second bearing area and a third bearing area are sequentially defined for the bearing bracket 4 along the length direction of the target 2; the first bearing area, the second bearing area and the third bearing area are all provided with silicon wafers.

The carrying bracket 4 is provided with a plurality of silicon wafers to be coated, and preferably, the silicon wafers are divided into a plurality of rows and a plurality of columns and are arranged on the carrying bracket 4 in a matrix. Along the first direction a, a first, a second and a third carrier region are delimited for the carrier 4, each carrier region being provided with at least one silicon wafer.

The first bearing area corresponds to the first sputtering area, the second bearing area corresponds to the second sputtering area, the third bearing area corresponds to the third sputtering area, a part of targets 2 corresponding to the first sputtering area can be used for coating the silicon wafers in the first bearing area, a part of targets 2 corresponding to the second sputtering area can be used for coating the silicon wafers in the second bearing area, and a part of targets 2 corresponding to the third sputtering area can be used for coating the silicon wafers in the third bearing area.

S3, detecting the thickness of a film layer of the silicon wafer; and detecting the film thickness of the silicon wafer on the first bearing area, the film thickness of the silicon wafer on the second bearing area and the film thickness of the silicon wafer on the third bearing area respectively.

In the actual processing and detection process, the first bearing area and the third bearing area correspond to the two ends of the target material 2, and the thickness of the film layer of the silicon wafer in the first bearing area and the thickness of the film layer of the silicon wafer in the third bearing area are often thicker than those of the film layer of the silicon wafer in the second bearing area.

S4, operating the adjusting device 3; the adjusting device 3 comprises a plurality of blocking pieces 302 which can move relative to the target 2, and the blocking pieces 302 at corresponding positions are correspondingly adjusted according to the detection result of the S3.

The plurality of blocking pieces 302 are sequentially arranged on the support 301 along the first direction a, each blocking piece 302 can slide relative to the support 301, and the blocking pieces 302 can be close to or far away from the target 2 in the process of sliding relative to the support 301.

Along the first direction a, the area where the plurality of blocking pieces 302 are located is virtually divided into a first adjusting area, a second adjusting area and a third adjusting area, wherein the first adjusting area corresponds to the first bearing area, the second adjusting area corresponds to the second bearing area, and the third adjusting area corresponds to the third bearing area. And (3) correspondingly adjusting the baffle plates 302 in the first adjusting region, the second adjusting region and/or the third adjusting region for the part with thicker film thickness according to the detection result of the step (S3).

Specifically, taking the case that the thickness of the film layer of the silicon wafer in the first bearing area is thicker than that of the silicon wafers in other bearing areas, sliding one or more baffle plates 302 in the first adjusting area, so that the baffle plates 302 extend forwards to slightly approach the target 2 for a distance, and the sputtering range corresponding to the first sputtering area is reduced to a certain extent, so that when a new silicon wafer in the first bearing area is coated again, the thickness of the film layer of the new silicon wafer can be thinned, and further, the thickness difference of the film layers of the silicon wafer at all positions on the bearing bracket 4 has higher consistency, and can be within a required range or be ignored. The adjustment process of other bearing areas is the same.

Further, when the adjustment is performed, the elongation of the baffle plate 302, which is supposed to be elongated, is calculated according to the proportion that the thickness of the film layer of the area on the silicon wafer is thinned by 2nm-5nm every 5mm-10mm of the baffle plate 302, so that the adjustment difficulty can be reduced, the adjustment efficiency can be improved, and the accuracy can be ensured.

It should be noted that, as mentioned above, through actual detection, the thickness of the film of the silicon wafer in the first carrying region and the thickness of the film of the silicon wafer in the third carrying region are often thicker than those of the silicon wafer in the second carrying region, and preferably, the baffle 302 may not be disposed in the second adjusting region.

S5, rechecking the thickness of the film layer; and after the baffle 302 is regulated, the film coating operation is carried out on the next batch of silicon wafers again, the film thickness of the silicon wafers is detected again after the film coating is finished, and whether the difference value of the film thicknesses of the silicon wafers on the first bearing area, the silicon wafers on the second bearing area and the silicon wafers on the third bearing area meets the requirement is compared.

Specifically, after step S4, the baffle 302 is kept at the adjusted position to re-perform the film plating operation on the next batch of silicon wafers on the carrier 4, and after the film plating is finished, the film thicknesses of the silicon wafers in the first carrier region, the second carrier region and the third carrier region are re-detected, and whether the difference value of the film thicknesses of all the silicon wafers meets the requirement is compared.

S6, performing coating operation in batches; according to the step S5, if the detection result does not meet the requirement, repeating the step S4; and if the detection result meets the requirement, coating the silicon wafers on the bearing bracket 4 in batches.

And repeating the step S4 and the step S5 until the difference value of the film thicknesses of all the silicon wafers in the first bearing area, the second bearing area and the third bearing area meets the requirement or can be ignored, discarding the silicon wafer serving as a detection target, locking the baffle 302 subjected to over-adjustment at the current position, and performing batch coating operation on the new silicon wafer, wherein the obtained film thickness of the silicon wafer coated with the film has higher-level consistency.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A vacuum coating process chamber, comprising:

the fixed box body is internally provided with a conveying space for conveying the bearing bracket;

2. The vacuum coating process chamber of claim 1, wherein the adjusting means comprises:

the supporting piece is connected with the fixed box body;

the baffle is arranged on the supporting piece and is the shielding part;

3. The vacuum coating process chamber according to claim 2, wherein the baffle plate is in a strip shape, the baffle plate is provided with a sliding groove, and the locking piece passes through the sliding groove to be connected with the supporting piece; the length of the sliding groove extends along the conveying direction of the bearing bracket.

4. The vacuum coating process chamber of claim 2, wherein the number of the barrier ribs is plural, and the barrier ribs are sequentially arranged along the length direction of the support member.

5. The vacuum coating process chamber according to claim 2, wherein a plurality of mark scales are arranged on the upper surface of each baffle at equal intervals, and the mark scales are sequentially arranged along the length direction of the baffle.

6. The vacuum coating process chamber of claim 2, wherein the target is elongated, and the length of the target extends along a first direction that is perpendicular to the direction of travel of the carrier.

7. The vacuum coating process chamber of claim 6, wherein the support is elongated, the support being disposed parallel to the target;

8. The vacuum coating process chamber according to any one of claims 2 to 7, wherein a plurality of the workpieces to be coated are provided on the carrier bracket; the bearing bracket and the workpiece to be coated are positioned below the baffle.

9. A vacuum coating process chamber according to claim 5, wherein the distance between any two adjacent marked scales is 5mm, each baffle is elongated by 5-10 mm relative to the support, and the thickness of the film layer of the workpiece to be coated below the baffle is reduced by 2-5 nm.

10. The PVD film thickness uniformity adjusting method is characterized by comprising the following steps: