CN116351481A - Resin regeneration process - Google Patents
Resin regeneration process Download PDFInfo
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- CN116351481A CN116351481A CN202310358115.7A CN202310358115A CN116351481A CN 116351481 A CN116351481 A CN 116351481A CN 202310358115 A CN202310358115 A CN 202310358115A CN 116351481 A CN116351481 A CN 116351481A
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- 239000011347 resin Substances 0.000 title claims abstract description 85
- 229920005989 resin Polymers 0.000 title claims abstract description 85
- 230000008929 regeneration Effects 0.000 title claims abstract description 40
- 238000011069 regeneration method Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000005406 washing Methods 0.000 claims abstract description 301
- 239000012492 regenerant Substances 0.000 claims abstract description 220
- 238000011010 flushing procedure Methods 0.000 claims abstract description 186
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 64
- 238000011001 backwashing Methods 0.000 claims abstract description 58
- 239000002253 acid Substances 0.000 claims abstract description 48
- 150000002500 ions Chemical class 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims description 89
- 229910001415 sodium ion Inorganic materials 0.000 claims description 46
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 claims description 43
- 150000001768 cations Chemical class 0.000 abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 16
- 239000000243 solution Substances 0.000 description 15
- 230000000875 corresponding effect Effects 0.000 description 13
- 230000000694 effects Effects 0.000 description 3
- 238000005342 ion exchange Methods 0.000 description 3
- NWUYHJFMYQTDRP-UHFFFAOYSA-N 1,2-bis(ethenyl)benzene;1-ethenyl-2-ethylbenzene;styrene Chemical compound C=CC1=CC=CC=C1.CCC1=CC=CC=C1C=C.C=CC1=CC=CC=C1C=C NWUYHJFMYQTDRP-UHFFFAOYSA-N 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000003729 cation exchange resin Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003456 ion exchange resin Substances 0.000 description 1
- 229920003303 ion-exchange polymer Polymers 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J49/00—Regeneration or reactivation of ion-exchangers; Apparatus therefor
- B01J49/60—Cleaning or rinsing ion-exchange beds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
- Y02W30/00—Technologies for solid waste management
- Y02W30/50—Reuse, recycling or recovery technologies
- Y02W30/62—Plastics recycling; Rubber recycling
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Washing And Drying Of Tableware (AREA)
Abstract
The invention relates to the technical field of resin regeneration, and in particular discloses a resin regeneration process, which comprises the following steps: s101: opening a backwashing water inlet valve and a backwashing water outlet valve, and closing the backwashing water inlet valve and the backwashing water outlet valve after the discharged water is clarified; s102: opening a regeneration acid inlet valve and a middle exhaust valve, and introducing a regenerant to flush the resin layer; s103: the central control system sets the flushing time of the regenerant through the concentration of the regenerant, and closes the regenerated acid inlet valve and the medium exhaust valve after flushing is finished; s104: and opening a forward washing water inlet valve and a forward washing water discharge valve, setting forward washing time of the resin layer according to the ion content in water discharged by the forward washing water discharge valve by the central control system, and closing the forward washing water inlet valve and the forward washing water discharge valve after the forward washing time is finished to complete regeneration. The method optimizes the regeneration process of the cation bed resin by controlling the time of the acid feeding process and the forward washing process during resin regeneration, effectively reduces the acid consumption and the water consumption, saves resources and reduces the operation cost.
Description
Technical Field
The present application relates to the field of resin regeneration technology, and more particularly, to a resin regeneration process.
Background
The regeneration treatment of the cation exchange resin is required to be performed through the steps of backwashing, acid injection, forward washing and the like after the ion exchange resin is invalid, the prior art mostly adopts fixed regeneration time to perform resin regeneration, the uniform time is uniformly used for performing the regeneration treatment on the resin no matter the concentration of the regenerant and the content of effluent ions in the system, and a large amount of acid consumption is generated in the regeneration process, so that unnecessary water resource waste is caused, therefore, a reasonable time point is provided, the regeneration step can be stopped in time while the regeneration degree of the resin is ensured, the acid consumption is reduced, and the method is the technical problem to be solved at present.
Disclosure of Invention
The invention provides a resin regeneration process which is used for solving the technical problem that the regeneration time cannot be accurately controlled in the prior art. Comprising the following steps:
s101: opening a backwashing water inlet valve and a backwashing water outlet valve, and closing the backwashing water inlet valve and the backwashing water outlet valve after the discharged water is clarified;
s102: opening a regeneration acid inlet valve and a middle exhaust valve, and introducing a regenerant to flush the resin layer;
s103: the central control system sets the flushing time of the regenerant through the concentration of the regenerant, and closes the regenerated acid inlet valve and the medium exhaust valve after flushing is finished;
s104: and opening a forward washing water inlet valve and a forward washing water discharge valve, setting forward washing time of the resin layer according to the ion content in water discharged by the forward washing water discharge valve by the central control system, and closing the forward washing water inlet valve and the forward washing water discharge valve after the forward washing time is finished to complete regeneration.
Further, the central control system is provided with a regenerant concentration matrix N and a regenerant flushing time matrix A, and for the regenerant flushing time matrix A, A (A1, A2, A3 and A4) is set, wherein A1 is a first preset flushing time, A2 is a second preset flushing time, A3 is a third preset flushing time, A4 is a fourth preset flushing time, and A1 is more than A2 and less than A3 and less than A4;
setting N (N1, N2, N3, N4) for the regenerant concentration matrix N, wherein N1 is a first preset regenerant concentration, N2 is a second preset regenerant concentration, N3 is a third preset regenerant concentration, N4 is a fourth preset regenerant concentration, and N1 is more than 2% and less than N3 and N4 is more than 10%;
the central control system is used for selecting corresponding flushing time as the flushing time of the regenerant according to the relation between the concentration of the regenerant and the preset regenerant concentration matrix N;
when the concentration of the regenerant is less than N1, selecting the fourth preset flushing time A4 as the regenerant flushing time;
when the concentration of N1 is less than the concentration of the regenerant is less than N2, selecting the third preset flushing time A3 as the flushing time of the regenerant;
when the concentration of N2 is less than the concentration of the regenerant is less than N3, selecting the second preset flushing time A2 as the flushing time of the regenerant;
and when N3 is less than the concentration of the regenerant is less than N4, selecting the first preset flushing time A1 as the regenerant flushing time.
Further, the central control system is also used for acquiring the backwashing time of the resin layer;
the central control system is also provided with a backwashing time matrix T and a regenerant flushing time correction coefficient matrix B, and B (B1, B2, B3 and B4) is set for the regenerant flushing time correction coefficient matrix B, wherein B1 is a first preset flushing time correction coefficient, B2 is a second preset flushing time correction coefficient, B3 is a third preset flushing time correction coefficient, B4 is a fourth preset flushing time correction coefficient, and B1 is more than 1 and less than 2 and B3 is more than 1 and less than 2;
setting T (T1, T2, T3 and T4) for the backwashing time matrix T, wherein T1 is a first backwashing time, T2 is a second backwashing time, T3 is a third backwashing time, T4 is a fourth backwashing time, and T1 is more than T2 and less than T3 and less than T4;
the central control system is also used for selecting a corresponding correction coefficient according to the relation between the backwashing time and the backwashing time matrix T to correct the ith preset flushing time, wherein i=1, 2,3 and 4;
when the backwashing time is less than T1, the first preset flushing time correction coefficient B1 is selected to correct the ith preset flushing time, and the corrected regenerant flushing time is Ai x B1;
when T1 is less than backwashing time less than T2, selecting the second preset flushing time correction coefficient B2 to correct the ith preset flushing time, wherein the corrected regenerant flushing time is Ai x B2;
when the T2 is less than the backwashing time and less than the T3, selecting the third preset flushing time correction coefficient B3 to correct the ith preset flushing time A3, wherein the corrected regenerant flushing time is Ai;
when the T3 is less than the backwash time is less than the T4, selecting the fourth preset rinse time correction coefficient B4 to correct the ith preset rinse time A4, wherein the corrected regenerant rinse time is ai×b4.
Further, the acid inlet valve is provided with a temperature sensor for detecting the temperature of the regenerant during acid inlet.
Further, the central control system is also used for acquiring the temperature of the regenerant when acid is fed according to the temperature sensor;
the central control system is also provided with a preset regenerant temperature matrix Q and a regenerant flushing time secondary correction coefficient matrix C, and C (C1, C2, C3 and C4) is set for the regenerant flushing time secondary correction coefficient matrix C, wherein C1 is a first preset regenerant flushing time secondary correction coefficient, C2 is a second preset regenerant flushing time secondary correction coefficient, C3 is a third preset regenerant flushing time secondary correction coefficient, C4 is a fourth preset regenerant flushing time secondary correction coefficient, and C1 is more than 0.5 and less than C2 and less than C3 and less than C4 and less than 1.5;
setting Q (Q1, Q2, Q3, Q4) for the preset regenerant temperature matrix Q, wherein Q1 is a first preset regenerant temperature, Q2 is a second preset regenerant temperature, Q3 is a third preset regenerant temperature, Q4 is a fourth preset regenerant temperature, and Q1 is less than Q2 and less than Q3 and less than Q4;
the central control system is also used for selecting a corresponding secondary correction coefficient according to the relation between the temperature of the regenerant during acid feeding and the preset regenerant temperature matrix Q to carry out secondary correction on the ith preset flushing time, wherein i=1, 2,3 and 4;
when the temperature of the regenerant is less than Q1 during acid feeding, a fourth preset regenerant flushing time secondary correction coefficient C4 is selected to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B1 and C4;
when the temperature of the regenerant is less than Q2 when Q1 is less than acid, selecting a second correction coefficient C3 of a third preset regenerant flushing time to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B2 and C3;
when the temperature of the regenerant is less than Q3 when Q2 is less than the acid, selecting a second preset regenerant flushing time secondary correction coefficient C2 to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B3 and C2;
when Q3 is less than the temperature of the regenerant when acid is fed and less than Q4, a second correction coefficient C1 of the first preset regenerant flushing time is selected to correct the i preset flushing time after correction, and the corrected regenerant flushing time is Ai, B4 and C1.
Further, an ion analysis device is arranged at the position of the forward washing drain valve and used for detecting the ion content of the water outlet during forward washing.
Further, the central control system is also used for acquiring the sodium ion content in the water of the positive washing drain valve in a preset period according to the ion analysis device;
the central control system is also provided with a sodium ion content matrix M and a preset positive washing time matrix P, and P (P1, P2, P3 and P4) is set for the preset positive washing time matrix P, wherein P1 is a first preset positive washing time, P2 is a second preset positive washing time, P3 is a third preset positive washing time, P4 is a fourth preset positive washing time, and P1 is more than P2 and less than P3 and less than P4;
setting M (M1, M2, M3 and M4) for the sodium ion content matrix M, wherein M1 is a first sodium ion content, M2 is a second sodium ion content, M3 is a third sodium ion content, M4 is a fourth sodium ion content, and M1 is less than M2 and less than M3 and less than M4;
the central control system is also used for selecting corresponding forward washing time as resin layer forward washing time according to the relation between the sodium ion content in the water of the forward washing drain valve in a preset period and the sodium ion content matrix M;
when the sodium ion content is less than M1, selecting the first preset positive washing time as the positive washing time of the resin layer;
when M1 is less than sodium ion content is less than M2, selecting the second preset forward washing time as the forward washing time of the resin layer;
when M2 is less than sodium ion content is less than M3, selecting the third preset positive washing time as the positive washing time of the resin layer;
and when M3 is less than the sodium ion content is less than M4, selecting the fourth preset positive washing time as the positive washing time of the resin layer.
Further, the method for determining the preset time period comprises the following steps:
acquiring a slope average value of sodium ions changing along with time according to the ion analyzer;
and detecting a period of time beginning to be reduced after the slope average value is continuously increased for a period of time, and setting a period of time from the peak value to the beginning to be reduced of the slope average value as a preset period of time.
Further, the central control system is further used for obtaining the final regenerant washing time, and the central control system is further used for adjusting the resin layer forward washing time according to the final regenerant washing time;
the central control system is provided with a final regenerant flushing time matrix Y and a preset positive washing time correction coefficient matrix D, and D (D1, D2, D3 and D4) is set for the preset positive washing time correction coefficient matrix D, wherein D1 is a first preset positive washing time correction coefficient, D2 is a second preset positive washing time correction coefficient, D3 is a third preset positive washing time correction coefficient, D4 is a fourth preset positive washing time correction coefficient, and D1 is more than 1 and less than D2 and D3 is more than 1 and less than D4 and less than 2;
setting Y (Y1, Y2, Y3 and Y4) for the final regenerant flushing time matrix Y, wherein Y1 is the first final regenerant flushing time, Y2 is the second final regenerant flushing time, Y3 is the third final regenerant flushing time, Y4 is the fourth final regenerant flushing time, and Y1 is more than Y2 and less than Y3 and less than Y4;
the central control system selects a corresponding correction coefficient of the preset positive washing time according to the relation between the final regenerant washing time and the final regenerant washing time matrix Y to correct the i preset positive washing time, i=1,
when the final regenerant washing time is less than Y1, selecting the first preset positive washing time correction coefficient D1 to correct the i preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi;
when Y1 is less than the final regenerant washing time and less than Y2, selecting the second preset positive washing time correction coefficient D2 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D2;
when Y2 is less than the final regenerant washing time and less than Y3, selecting the third preset positive washing time correction coefficient D3 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D3;
and when Y3 is less than the final regenerant washing time and less than Y4, selecting the fourth preset positive washing time correction coefficient D4 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D4.
Further, the central control system is further used for obtaining a forward washing flow rate, and the central control system is further used for carrying out secondary correction on the i preset forward washing time according to the forward washing flow rate, wherein i=1, 2,3 and 4;
the central control system is provided with a positive washing flow rate matrix V and a preset positive washing time secondary correction matrix E, and E (E1, E2, E3 and E4) is set for the preset positive washing time secondary correction matrix E, wherein E1 is a first preset positive washing time secondary correction coefficient, E2 is a second preset positive washing time secondary correction coefficient, E3 is a third preset positive washing time secondary correction coefficient, E4 is a fourth preset positive washing time secondary correction coefficient, and E1 is more than 1 and less than E2 and E3 and E4 is more than 1.5;
setting V (V1, V2, V3 and V4) for the forward washing flow rate matrix V, wherein V1 is a first forward washing flow rate, V2 is a second forward washing flow rate, V3 is a third forward washing flow rate, V4 is a fourth forward washing flow rate, and V1 is more than 10m/h and V2 is more than 10m/h and V3 is more than 3 m/h and V4 is more than 40m/h;
the central control system selects a corresponding secondary correction coefficient of the preset positive washing time according to the relation between the positive washing flow rate and the positive washing flow rate matrix V to carry out secondary correction on the i preset positive washing time, wherein i=1, 2,3 and 4;
when the forward washing flow rate is less than V1, selecting the first preset forward washing time secondary correction coefficient E1 to correct the i-th forward washing time after correction, wherein the forward washing time of the resin layer after correction is Pi D1E 1;
when V1 is smaller than positive washing flow rate and smaller than V2, selecting a second correction coefficient E2 of the second preset positive washing time to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D2E 2;
when V2 is smaller than positive washing flow rate and smaller than V3, selecting the third preset positive washing time secondary correction coefficient E3 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D3E 3;
when V3 is less than positive washing flow rate is less than V4, selecting the fourth preset positive washing time secondary correction coefficient E4 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is pi×d4×e4.
By applying the technical scheme, the invention realizes that the acid inlet time and the forward washing time are controlled by the central control system according to the concentration of the regenerant and the ion content of the forward washing water, and the acid inlet time and the forward washing time are further corrected according to the factors such as the backwashing time, the temperature, the acid inlet time, the flow rate and the like, the closing time points of the water outlet valve and the water outlet valve are accurately controlled, the regeneration process of the cation bed resin is optimized, the acid consumption and the water consumption are effectively reduced, the resources are saved, and the running cost is reduced.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 shows a schematic flow chart of a resin regeneration process according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
The embodiment of the application provides a resin regeneration process, as shown in fig. 1, specifically comprising the following steps:
s101: opening a backwashing water inlet valve and a backwashing water outlet valve, and closing the backwashing water inlet valve and the backwashing water outlet valve after the discharged water is clarified;
s102: opening a regeneration acid inlet valve and a middle exhaust valve, and introducing a regenerant to flush the resin layer;
s103: the central control system sets the flushing time of the regenerant through the concentration of the regenerant, and closes the regenerated acid inlet valve and the medium exhaust valve after flushing is finished;
s104: and opening a forward washing water inlet valve and a forward washing water discharge valve, setting forward washing time of the resin layer according to the ion content in water discharged by the forward washing water discharge valve by the central control system, and closing the forward washing water inlet valve and the forward washing water discharge valve after the forward washing time is finished to complete regeneration.
In the embodiment, the backwash process is completed when the effluent of the backwash drain valve is clarified by observing the effluent condition of the backwash drain valve; and (3) selecting hydrochloric acid solution as a regenerant in the acid feeding step, and setting flushing time by a central control system according to the concentration of the hydrochloric acid solution, and finishing the acid feeding process after the flushing time is over.
In some embodiments of the present application, the central control system is configured with a regenerant concentration matrix N and a regenerant rinse time matrix a for which a (A1, A2, A3, A4) is configured, wherein A1 is a first preset rinse time, A2 is a second preset rinse time, A3 is a third preset rinse time, A4 is a fourth preset rinse time, and A1 < A2 < A3 < A4;
setting N (N1, N2, N3, N4) for the regenerant concentration matrix N, wherein N1 is a first preset regenerant concentration, N2 is a second preset regenerant concentration, N3 is a third preset regenerant concentration, N4 is a fourth preset regenerant concentration, and N1 is more than 2% and less than N3 and N4 is more than 10%;
the central control system is used for selecting corresponding flushing time as the flushing time of the regenerant according to the relation between the concentration of the regenerant and the preset regenerant concentration matrix N;
when the concentration of the regenerant is less than N1, selecting the fourth preset flushing time A4 as the regenerant flushing time;
when the concentration of N1 is less than the concentration of the regenerant is less than N2, selecting the third preset flushing time A3 as the flushing time of the regenerant;
when the concentration of N2 is less than the concentration of the regenerant is less than N3, selecting the second preset flushing time A2 as the flushing time of the regenerant;
and when N3 is less than the concentration of the regenerant is less than N4, selecting the first preset flushing time A1 as the regenerant flushing time.
In the embodiment, the concentration of the hydrochloric acid solution is generally controlled to be 2% -10%, when the concentration of the solution is higher, the required flushing time of the regenerant is shorter, and the proper flushing time can be set according to the concentration of the solution through the central control system, so that the waste of the hydrochloric acid solution caused by overlong flushing time is prevented, and the resources and the running cost of the system are saved.
In some embodiments of the present application, the central control system is further configured to obtain a resin layer backwash time;
the central control system is also provided with a backwashing time matrix T and a regenerant flushing time correction coefficient matrix B, and B (B1, B2, B3 and B4) is set for the regenerant flushing time correction coefficient matrix B, wherein B1 is a first preset flushing time correction coefficient, B2 is a second preset flushing time correction coefficient, B3 is a third preset flushing time correction coefficient, B4 is a fourth preset flushing time correction coefficient, and B1 is more than 1 and less than 2 and B3 is more than 1 and less than 2;
setting T (T1, T2, T3 and T4) for the backwashing time matrix T, wherein T1 is a first backwashing time, T2 is a second backwashing time, T3 is a third backwashing time, T4 is a fourth backwashing time, and T1 is more than T2 and less than T3 and less than T4;
the central control system is also used for selecting a corresponding correction coefficient according to the relation between the backwashing time and the backwashing time matrix T to correct the ith preset flushing time, wherein i=1, 2,3 and 4;
when the backwashing time is less than T1, the first preset flushing time correction coefficient B1 is selected to correct the ith preset flushing time, and the corrected regenerant flushing time is Ai x B1;
when T1 is less than backwashing time less than T2, selecting the second preset flushing time correction coefficient B2 to correct the ith preset flushing time, wherein the corrected regenerant flushing time is Ai x B2;
when the T2 is less than the backwashing time and less than the T3, selecting the third preset flushing time correction coefficient B3 to correct the ith preset flushing time A3, wherein the corrected regenerant flushing time is Ai;
when the T3 is less than the backwash time is less than the T4, selecting the fourth preset rinse time correction coefficient B4 to correct the ith preset rinse time A4, wherein the corrected regenerant rinse time is ai×b4.
In this embodiment, after the backwashing step is completed, the backwashing time is uploaded to the central control system, the central control system corrects the flushing time by analyzing the speed of the backwashing time, which means that the shorter the backwashing time of the resin layer, the lower the breaking degree of the resin layer, the less the impurities, the shorter the acid inlet time is needed, and accordingly, the flushing time can be properly adjusted according to the speed of the backwashing time, and the flushing time is further controlled.
In some embodiments of the present application, the acid inlet valve position is provided with a temperature sensor for detecting the temperature of the regenerant at the time of acid inlet.
In some embodiments of the present application, the central control system is further configured to obtain a regenerant temperature at the time of acid addition according to the temperature sensor;
the central control system is also provided with a preset regenerant temperature matrix Q and a regenerant flushing time secondary correction coefficient matrix C, and C (C1, C2, C3 and C4) is set for the regenerant flushing time secondary correction coefficient matrix C, wherein C1 is a first preset regenerant flushing time secondary correction coefficient, C2 is a second preset regenerant flushing time secondary correction coefficient, C3 is a third preset regenerant flushing time secondary correction coefficient, C4 is a fourth preset regenerant flushing time secondary correction coefficient, and C1 is more than 0.5 and less than C2 and less than C3 and less than C4 and less than 1.5;
setting Q (Q1, Q2, Q3, Q4) for the preset regenerant temperature matrix Q, wherein Q1 is a first preset regenerant temperature, Q2 is a second preset regenerant temperature, Q3 is a third preset regenerant temperature, Q4 is a fourth preset regenerant temperature, and Q1 is less than Q2 and less than Q3 and less than Q4;
the central control system is also used for selecting a corresponding secondary correction coefficient according to the relation between the temperature of the regenerant during acid feeding and the preset regenerant temperature matrix Q to carry out secondary correction on the ith preset flushing time, wherein i=1, 2,3 and 4;
when the temperature of the regenerant is less than Q1 during acid feeding, a fourth preset regenerant flushing time secondary correction coefficient C4 is selected to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B1 and C4;
when the temperature of the regenerant is less than Q2 when Q1 is less than acid, selecting a second correction coefficient C3 of a third preset regenerant flushing time to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B2 and C3;
when the temperature of the regenerant is less than Q3 when Q2 is less than the acid, selecting a second preset regenerant flushing time secondary correction coefficient C2 to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B3 and C2;
when Q3 is less than the temperature of the regenerant when acid is fed and less than Q4, a second correction coefficient C1 of the first preset regenerant flushing time is selected to correct the i preset flushing time after correction, and the corrected regenerant flushing time is Ai, B4 and C1.
In the embodiment, the temperature of the hydrochloric acid solution can influence the cation bed ion exchange rate during acid feeding, when the temperature is too low, the ion exchange rate is reduced, and the central control system prolongs the flushing time through a secondary correction coefficient, so that the sufficient replacement of ions in the cation bed is ensured; along with the increase of the temperature of the hydrochloric acid solution, the ion exchange rate can also be increased, the central control system shortens the flushing time through the secondary correction coefficient, the use amount of the hydrochloric acid solution is strictly controlled, and the resource is saved.
In some embodiments of the present application, the position of the forward washing drain valve is provided with an ion analysis device for detecting the ion content of the effluent water during forward washing.
In some embodiments of the present application, the central control system is further configured to obtain, according to the ion analysis device, a sodium ion content in the effluent of the water discharge valve for positive washing in a preset period;
the central control system is also provided with a sodium ion content matrix M and a preset positive washing time matrix P, and P (P1, P2, P3 and P4) is set for the preset positive washing time matrix P, wherein P1 is a first preset positive washing time, P2 is a second preset positive washing time, P3 is a third preset positive washing time, P4 is a fourth preset positive washing time, and P1 is more than P2 and less than P3 and less than P4;
setting M (M1, M2, M3 and M4) for the sodium ion content matrix M, wherein M1 is a first sodium ion content, M2 is a second sodium ion content, M3 is a third sodium ion content, M4 is a fourth sodium ion content, and M1 is less than M2 and less than M3 and less than M4;
the central control system is also used for selecting corresponding forward washing time as resin layer forward washing time according to the relation between the sodium ion content in the water of the forward washing drain valve in a preset period and the sodium ion content matrix M;
when the sodium ion content is less than M1, selecting the first preset positive washing time as the positive washing time of the resin layer;
when M1 is less than sodium ion content is less than M2, selecting the second preset forward washing time as the forward washing time of the resin layer;
when M2 is less than sodium ion content is less than M3, selecting the third preset positive washing time as the positive washing time of the resin layer;
and when M3 is less than the sodium ion content is less than M4, selecting the fourth preset positive washing time as the positive washing time of the resin layer.
In this embodiment, the time of the forward washing is determined by the sodium ion content in the effluent of the forward washing drain valve in the preset period, the sodium ion content is used as an important index of the effluent quality, the forward washing time is strongly correlated, and the higher the sodium ion content in the preset period is, the longer the forward washing time is.
In some embodiments of the present application, the method for determining the preset period is:
acquiring a slope average value of sodium ions changing along with time according to the ion analyzer;
and detecting a period of time beginning to be reduced after the slope average value is continuously increased for a period of time, and setting a period of time from the peak value to the beginning to be reduced of the slope average value as a preset period of time.
In some embodiments of the present application, the central control system is further configured to obtain a final regenerant rinse time, and the central control system is further configured to adjust the resin layer forward wash time according to the final regenerant rinse time;
the central control system is provided with a final regenerant flushing time matrix Y and a preset positive washing time correction coefficient matrix D, and D (D1, D2, D3 and D4) is set for the preset positive washing time correction coefficient matrix D, wherein D1 is a first preset positive washing time correction coefficient, D2 is a second preset positive washing time correction coefficient, D3 is a third preset positive washing time correction coefficient, D4 is a fourth preset positive washing time correction coefficient, and D1 is more than 1 and less than D2 and D3 is more than 1 and less than D4 and less than 2;
setting Y (Y1, Y2, Y3 and Y4) for the final regenerant flushing time matrix Y, wherein Y1 is the first final regenerant flushing time, Y2 is the second final regenerant flushing time, Y3 is the third final regenerant flushing time, Y4 is the fourth final regenerant flushing time, and Y1 is more than Y2 and less than Y3 and less than Y4;
the central control system selects a corresponding preset positive washing time correction coefficient according to the relation between the final regenerant washing time and the final regenerant washing time matrix Y to correct the i preset positive washing time, wherein i=1, 2,3 and 4;
when the final regenerant washing time is less than Y1, selecting the first preset positive washing time correction coefficient D1 to correct the i preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi;
when Y1 is less than the final regenerant washing time and less than Y2, selecting the second preset positive washing time correction coefficient D2 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D2;
when Y2 is less than the final regenerant washing time and less than Y3, selecting the third preset positive washing time correction coefficient D3 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D3;
and when Y3 is less than the final regenerant washing time and less than Y4, selecting the fourth preset positive washing time correction coefficient D4 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D4.
In this embodiment, after the acid feeding step is completed, the washing time of the hydrochloric acid solution is uploaded to the central control system, the central control system corrects the positive washing time by analyzing the speed of the washing time, the shorter the washing time is, the lower the concentration of the regenerant during washing is, the easier the solution remained after the acid feeding step is completed is washed, and accordingly, the positive washing time can be adjusted according to the washing time, and the positive washing time is controlled to be prolonged so as to achieve a better washing effect.
In some embodiments of the present application, the central control system is further configured to obtain a forward washing flow rate, and the central control system is further configured to perform a secondary correction on the i-th preset forward washing time according to the forward washing flow rate, where i=1, 2,3,4;
the central control system is provided with a positive washing flow rate matrix V and a preset positive washing time secondary correction matrix E, and E (E1, E2, E3 and E4) is set for the preset positive washing time secondary correction matrix E, wherein E1 is a first preset positive washing time secondary correction coefficient, E2 is a second preset positive washing time secondary correction coefficient, E3 is a third preset positive washing time secondary correction coefficient, E4 is a fourth preset positive washing time secondary correction coefficient, and E1 is more than 1 and less than E2 and E3 and E4 is more than 1.5;
setting V (V1, V2, V3 and V4) for the forward washing flow rate matrix V, wherein V1 is a first forward washing flow rate, V2 is a second forward washing flow rate, V3 is a third forward washing flow rate, V4 is a fourth forward washing flow rate, and V1 is more than 10m/h and V2 is more than 10m/h and V3 is more than 3 m/h and V4 is more than 40m/h;
the central control system selects a corresponding secondary correction coefficient of the preset positive washing time according to the relation between the positive washing flow rate and the positive washing flow rate matrix V to carry out secondary correction on the i preset positive washing time, wherein i=1, 2,3 and 4;
when the forward washing flow rate is less than V1, selecting the first preset forward washing time secondary correction coefficient E1 to correct the i-th forward washing time after correction, wherein the forward washing time of the resin layer after correction is Pi D1E 1;
when V1 is smaller than positive washing flow rate and smaller than V2, selecting a second correction coefficient E2 of the second preset positive washing time to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D2E 2;
when V2 is smaller than positive washing flow rate and smaller than V3, selecting the third preset positive washing time secondary correction coefficient E3 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D3E 3;
when V3 is less than positive washing flow rate is less than V4, selecting the fourth preset positive washing time secondary correction coefficient E4 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is pi×d4×e4.
In this embodiment, the flow rate of the forward washing water affects the contact area between the water flow and the resin layer, the embodiment controls the forward washing flow rate to be 10m/h-40m/h, the lower the flow rate, the larger the contact area between the water flow and the resin layer is, the better the forward washing effect is, the shorter the required forward washing time is, and the central control system obtains the forward washing flow rate according to the flowmeter arranged in the cation bed, and properly adjusts the forward washing time through the secondary correction coefficient, so as to achieve the better washing effect.
In order to further explain the technical idea of the invention, the technical scheme of the invention is described with specific application scenarios.
By applying the technical scheme, the resin regeneration process provided by the embodiment of the invention resets the resin layer regenerant flushing time and the positive washing time through detecting the regenerant concentration and the sodium ion content of the effluent so as to realize accurate control of the regenerant dosage and the water quantity, optimize the regeneration process of the cation bed resin, effectively reduce the acid consumption and the water consumption, save resources and reduce the running cost.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present application, and are not limiting thereof; although the present application has been described in detail with reference to the foregoing embodiments, one of ordinary skill in the art will appreciate that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not drive the essence of the corresponding technical solutions to depart from the spirit and scope of the technical solutions of the embodiments of the present application.
Claims (10)
1. A resin regeneration process, comprising the steps of:
s101: opening a backwashing water inlet valve and a backwashing water outlet valve, and closing the backwashing water inlet valve and the backwashing water outlet valve after the discharged water is clarified;
s102: opening a regeneration acid inlet valve and a middle exhaust valve, and introducing a regenerant to flush the resin layer;
s103: the central control system sets the flushing time of the regenerant through the concentration of the regenerant, and closes the regenerated acid inlet valve and the medium exhaust valve after flushing is finished;
s104: and opening a forward washing water inlet valve and a forward washing water discharge valve, setting forward washing time of the resin layer according to the ion content in water discharged by the forward washing water discharge valve by the central control system, and closing the forward washing water inlet valve and the forward washing water discharge valve after the forward washing time is finished to complete regeneration.
2. The resin regeneration process according to claim 1, wherein,
the central control system is provided with a regenerant concentration matrix N and a regenerant flushing time matrix A, and for the regenerant flushing time matrix A, A (A1, A2, A3 and A4) is set, wherein A1 is a first preset flushing time, A2 is a second preset flushing time, A3 is a third preset flushing time, A4 is a fourth preset flushing time, and A1 is more than A2 and less than A3 and less than A4;
setting N (N1, N2, N3, N4) for the regenerant concentration matrix N, wherein N1 is a first preset regenerant concentration, N2 is a second preset regenerant concentration, N3 is a third preset regenerant concentration, N4 is a fourth preset regenerant concentration, and N1 is more than 2% and less than N3 and N4 is more than 10%;
the central control system is used for selecting corresponding flushing time as the flushing time of the regenerant according to the relation between the concentration of the regenerant and the preset regenerant concentration matrix N;
when the concentration of the regenerant is less than N1, selecting the fourth preset flushing time A4 as the regenerant flushing time;
when the concentration of N1 is less than the concentration of the regenerant is less than N2, selecting the third preset flushing time A3 as the flushing time of the regenerant;
when the concentration of N2 is less than the concentration of the regenerant is less than N3, selecting the second preset flushing time A2 as the flushing time of the regenerant;
and when N3 is less than the concentration of the regenerant is less than N4, selecting the first preset flushing time A1 as the regenerant flushing time.
3. The resin regeneration process according to claim 2, wherein,
the central control system is also used for acquiring the backwashing time of the resin layer;
the central control system is also provided with a backwashing time matrix T and a regenerant flushing time correction coefficient matrix B, and B (B1, B2, B3 and B4) is set for the regenerant flushing time correction coefficient matrix B, wherein B1 is a first preset flushing time correction coefficient, B2 is a second preset flushing time correction coefficient, B3 is a third preset flushing time correction coefficient, B4 is a fourth preset flushing time correction coefficient, and B1 is more than 1 and less than 2 and B3 is more than 1 and less than 2;
setting T (T1, T2, T3 and T4) for the backwashing time matrix T, wherein T1 is a first backwashing time, T2 is a second backwashing time, T3 is a third backwashing time, T4 is a fourth backwashing time, and T1 is more than T2 and less than T3 and less than T4;
the central control system is also used for selecting a corresponding correction coefficient according to the relation between the backwashing time and the backwashing time matrix T to correct the ith preset flushing time, wherein i=1, 2,3 and 4;
when the backwashing time is less than T1, the first preset flushing time correction coefficient B1 is selected to correct the ith preset flushing time, and the corrected regenerant flushing time is Ai x B1;
when T1 is less than backwashing time less than T2, selecting the second preset flushing time correction coefficient B2 to correct the ith preset flushing time, wherein the corrected regenerant flushing time is Ai x B2;
when the T2 is less than the backwashing time and less than the T3, selecting the third preset flushing time correction coefficient B3 to correct the ith preset flushing time A3, wherein the corrected regenerant flushing time is Ai;
when the T3 is less than the backwash time is less than the T4, selecting the fourth preset rinse time correction coefficient B4 to correct the ith preset rinse time A4, wherein the corrected regenerant rinse time is ai×b4.
4. A resin regeneration process according to claim 3, wherein the acid feed valve position is provided with a temperature sensor for detecting the temperature of the regenerant at the time of acid feed.
5. The resin regeneration process according to claim 4, wherein,
the central control system is also used for acquiring the temperature of the regenerant when acid is fed according to the temperature sensor;
the central control system is also provided with a preset regenerant temperature matrix Q and a regenerant flushing time secondary correction coefficient matrix C, and C (C1, C2, C3 and C4) is set for the regenerant flushing time secondary correction coefficient matrix C, wherein C1 is a first preset regenerant flushing time secondary correction coefficient, C2 is a second preset regenerant flushing time secondary correction coefficient, C3 is a third preset regenerant flushing time secondary correction coefficient, C4 is a fourth preset regenerant flushing time secondary correction coefficient, and C1 is more than 0.5 and less than C2 and less than C3 and less than C4 and less than 1.5;
setting Q (Q1, Q2, Q3, Q4) for the preset regenerant temperature matrix Q, wherein Q1 is a first preset regenerant temperature, Q2 is a second preset regenerant temperature, Q3 is a third preset regenerant temperature, Q4 is a fourth preset regenerant temperature, and Q1 is less than Q2 and less than Q3 and less than Q4;
the central control system is also used for selecting a corresponding secondary correction coefficient according to the relation between the temperature of the regenerant during acid feeding and the preset regenerant temperature matrix Q to carry out secondary correction on the ith preset flushing time, wherein i=1, 2,3 and 4;
when the temperature of the regenerant is less than Q1 during acid feeding, a fourth preset regenerant flushing time secondary correction coefficient C4 is selected to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B1 and C4;
when the temperature of the regenerant is less than Q2 when Q1 is less than acid, selecting a second correction coefficient C3 of a third preset regenerant flushing time to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B2 and C3;
when the temperature of the regenerant is less than Q3 when Q2 is less than the acid, selecting a second preset regenerant flushing time secondary correction coefficient C2 to correct the i preset flushing time after correction, wherein the corrected regenerant flushing time is Ai, B3 and C2;
when Q3 is less than the temperature of the regenerant when acid is fed and less than Q4, a second correction coefficient C1 of the first preset regenerant flushing time is selected to correct the i preset flushing time after correction, and the corrected regenerant flushing time is Ai, B4 and C1.
6. The resin regeneration process according to claim 1, wherein the position of the forward-washing drain valve is provided with an ion analysis device for detecting the ion content of the water discharged during forward washing.
7. The resin regeneration process according to claim 1, wherein,
the central control system is also used for acquiring the sodium ion content in the water of the positive washing drain valve in a preset period according to the ion analysis device;
the central control system is also provided with a sodium ion content matrix M and a preset positive washing time matrix P, and P (P1, P2, P3 and P4) is set for the preset positive washing time matrix P, wherein P1 is a first preset positive washing time, P2 is a second preset positive washing time, P3 is a third preset positive washing time, P4 is a fourth preset positive washing time, and P1 is more than P2 and less than P3 and less than P4;
setting M (M1, M2, M3 and M4) for the sodium ion content matrix M, wherein M1 is a first sodium ion content, M2 is a second sodium ion content, M3 is a third sodium ion content, M4 is a fourth sodium ion content, and M1 is less than M2 and less than M3 and less than M4;
the central control system is also used for selecting corresponding forward washing time as resin layer forward washing time according to the relation between the sodium ion content in the water of the forward washing drain valve in a preset period and the sodium ion content matrix M;
when the sodium ion content is less than M1, selecting the first preset positive washing time as the positive washing time of the resin layer;
when M1 is less than sodium ion content is less than M2, selecting the second preset forward washing time as the forward washing time of the resin layer;
when M2 is less than sodium ion content is less than M3, selecting the third preset positive washing time as the positive washing time of the resin layer;
and when M3 is less than the sodium ion content is less than M4, selecting the fourth preset positive washing time as the positive washing time of the resin layer.
8. The resin regeneration process according to claim 7, wherein the predetermined period of time is determined by:
acquiring a slope average value of sodium ions changing along with time according to the ion analyzer;
and detecting a period of time beginning to be reduced after the slope average value is continuously increased for a period of time, and setting a period of time from the peak value to the beginning to be reduced of the slope average value as a preset period of time.
9. The resin regeneration process according to claim 8, wherein,
the central control system is also used for acquiring the final regenerant flushing time, and adjusting the resin layer forward-washing time according to the final regenerant flushing time;
the central control system is provided with a final regenerant flushing time matrix Y and a preset positive washing time correction coefficient matrix D, and D (D1, D2, D3 and D4) is set for the preset positive washing time correction coefficient matrix D, wherein D1 is a first preset positive washing time correction coefficient, D2 is a second preset positive washing time correction coefficient, D3 is a third preset positive washing time correction coefficient, D4 is a fourth preset positive washing time correction coefficient, and D1 is more than 1 and less than D2 and D3 is more than 1 and less than D4 and less than 2;
setting Y (Y1, Y2, Y3 and Y4) for the final regenerant flushing time matrix Y, wherein Y1 is the first final regenerant flushing time, Y2 is the second final regenerant flushing time, Y3 is the third final regenerant flushing time, Y4 is the fourth final regenerant flushing time, and Y1 is more than Y2 and less than Y3 and less than Y4;
the central control system selects a corresponding preset positive washing time correction coefficient according to the relation between the final regenerant washing time and the final regenerant washing time matrix Y to correct the i preset positive washing time, wherein i=1, 2,3 and 4;
when the final regenerant washing time is less than Y1, selecting the first preset positive washing time correction coefficient D1 to correct the i preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi;
when Y1 is less than the final regenerant washing time and less than Y2, selecting the second preset positive washing time correction coefficient D2 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D2;
when Y2 is less than the final regenerant washing time and less than Y3, selecting the third preset positive washing time correction coefficient D3 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D3;
and when Y3 is less than the final regenerant washing time and less than Y4, selecting the fourth preset positive washing time correction coefficient D4 to correct the i-th preset positive washing time, wherein the positive washing time of the corrected resin layer is Pi x D4.
10. The resin regeneration process according to claim 9, wherein,
the central control system is also used for acquiring the forward washing flow rate, and performing secondary correction on the i preset forward washing time according to the forward washing flow rate, wherein i=1, 2,3 and 4;
the central control system is provided with a positive washing flow rate matrix V and a preset positive washing time secondary correction matrix E, and E (E1, E2, E3 and E4) is set for the preset positive washing time secondary correction matrix E, wherein E1 is a first preset positive washing time secondary correction coefficient, E2 is a second preset positive washing time secondary correction coefficient, E3 is a third preset positive washing time secondary correction coefficient, E4 is a fourth preset positive washing time secondary correction coefficient, and E1 is more than 1 and less than E2 and E3 and E4 is more than 1.5;
setting V (V1, V2, V3 and V4) for the forward washing flow rate matrix V, wherein V1 is a first forward washing flow rate, V2 is a second forward washing flow rate, V3 is a third forward washing flow rate, V4 is a fourth forward washing flow rate, and V1 is more than 10m/h and V2 is more than 10m/h and V3 is more than 3 m/h and V4 is more than 40m/h;
the central control system selects a corresponding secondary correction coefficient of the preset positive washing time according to the relation between the positive washing flow rate and the positive washing flow rate matrix V to carry out secondary correction on the i preset positive washing time, wherein i=1, 2,3 and 4;
when the forward washing flow rate is less than V1, selecting the first preset forward washing time secondary correction coefficient E1 to correct the i-th forward washing time after correction, wherein the forward washing time of the resin layer after correction is Pi D1E 1;
when V1 is smaller than positive washing flow rate and smaller than V2, selecting a second correction coefficient E2 of the second preset positive washing time to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D2E 2;
when V2 is smaller than positive washing flow rate and smaller than V3, selecting the third preset positive washing time secondary correction coefficient E3 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is Pi D3E 3;
when V3 is less than positive washing flow rate is less than V4, selecting the fourth preset positive washing time secondary correction coefficient E4 to correct the i-th positive washing time after correction, wherein the positive washing time of the resin layer after correction is pi×d4×e4.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105126938A (en) * | 2015-09-17 | 2015-12-09 | 南通海容热能环境工程有限公司 | Counter flow regenerative cation exchange process |
| CN107362835A (en) * | 2017-08-14 | 2017-11-21 | 中国石油化工股份有限公司 | A kind of one-level DW system demineralized water system negative and positive bed renovation process |
| CN110624611A (en) * | 2019-03-27 | 2019-12-31 | 兆德（南通）电子科技有限公司 | Cation resin regeneration process |
| CN217568776U (en) * | 2022-05-19 | 2022-10-14 | 济宁中银电化有限公司 | Mixed bed device capable of recycling regenerated wastewater |
-
2023
- 2023-03-31 CN CN202310358115.7A patent/CN116351481A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105126938A (en) * | 2015-09-17 | 2015-12-09 | 南通海容热能环境工程有限公司 | Counter flow regenerative cation exchange process |
| CN107362835A (en) * | 2017-08-14 | 2017-11-21 | 中国石油化工股份有限公司 | A kind of one-level DW system demineralized water system negative and positive bed renovation process |
| CN110624611A (en) * | 2019-03-27 | 2019-12-31 | 兆德（南通）电子科技有限公司 | Cation resin regeneration process |
| CN217568776U (en) * | 2022-05-19 | 2022-10-14 | 济宁中银电化有限公司 | Mixed bed device capable of recycling regenerated wastewater |
Non-Patent Citations (2)
| Title |
|---|
| 刘洋: "《锅炉水工系统技术》", 31 August 2020, 哈尔滨工程大学出版社, pages: 85 - 86 * |
| 杨作清: "《钢铁工业水处理实用技术与应用》", 30 June 2015, 冶金工业出版社, pages: 312 * |
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