CN116344652A - Forward four-junction solar cell of nonlinear gradual change mismatch layer based on overshoot callback - Google Patents

Forward four-junction solar cell of nonlinear gradual change mismatch layer based on overshoot callback Download PDF

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CN116344652A
CN116344652A CN202310330266.1A CN202310330266A CN116344652A CN 116344652 A CN116344652 A CN 116344652A CN 202310330266 A CN202310330266 A CN 202310330266A CN 116344652 A CN116344652 A CN 116344652A
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layer
equal
mismatch
less
doped
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万荣华
张启明
高伟
张宝
高慧
张文涛
马长金
刘长喜
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Tianjin Lantian Solar Tech Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells

Abstract

The invention discloses a forward four-junction solar cell based on a nonlinear gradual change mismatch layer of overshoot callback, which comprises a germanium substrate, wherein the top of the germanium substrate is sequentially provided with a GaInP nucleation layer, a GaInAs buffer layer, a first tunneling junction and (Al) from bottom to top c Ga 1‑c ) 1‑ b In b As/(Al d Ga 1‑d ) 1‑b In b As DBR、Ga 1‑x In x As cell, second tunnel junction, (Al) c Ga 1‑c ) 1‑b In b As/(Al d Ga 1‑d ) 1‑ b In b As DBR、Ga 1‑e In e As 1‑m P 1‑m Battery, third tunnel junction, (Al) f Ga 1‑f ) 1‑y In y P-cell and cap layer; wherein, (Al c Ga 1‑c ) 1‑ b In b As/(Al d Ga 1‑d ) 1‑b In b The As DBR is a nonlinear gradient mismatch layer, the component b from the initial layer to the target gradient layer In is nonlinear graded from 0.01 to x from bottom to top, and each layer In the nonlinear gradient mismatch layer overshoots and recalls according to the proportion i. The method can realize that each layer adjusts or slows down the mismatching stress, and In the design of the layer material, the overshoot range of In can be reduced when the overshoot layer of the DBR structure is designed, and the stress defect In the film material is released by smaller overcharge, so that the mismatching layer material with high crystal quality is grown.

Description

Forward four-junction solar cell of nonlinear gradual change mismatch layer based on overshoot callback
Technical Field
The invention relates to the technical field of solar cells, in particular to a forward four-junction solar cell of a nonlinear gradual change mismatch layer based on overshoot callback.
Background
Gallium arsenide solar cells have been widely used, and their photoelectric conversion efficiency is continuously improved from common single junction to research and development using multi-junction lamination technology. Lattice matched triple junction solar cells with 30% photoelectric conversion efficiency have been successfully used in a variety of space satellite models. In addition, lattice-mismatched three-junction GaInP/GaInAs/Ge solar cells with the conversion efficiency of 32% are currently mass-produced, and are applied to satellite models such as PakTES-1A and the like. However, the current of the three-junction stacked cell is not completely matched, a certain energy waste exists in the germanium junction cell, and the calculation shows that the larger the number of the cell junctions connected in series, the higher the theoretical conversion efficiency is, but the actual growth process is difficult to realize.
Related researches show that the lattice-mismatched forward four-junction laminated solar cell (1.9/1.4/1.0/0.7 eV) has more reasonable spectrum division, and can obtain the theoretical photoelectric conversion efficiency (AM 0 spectrum) of 36.8%. However, the current solar cell stacked by the forward four-junction gallium arsenide has the main defects of low current density, narrow process window of a main functional layer, unstable growth condition of mismatched materials and about 32% of photoelectric conversion efficiency reported in the related art, so that the solar cell stacked by the four-junction gallium arsenide has a great improvement space.
Disclosure of Invention
The invention aims to solve the problem that the photoelectric conversion efficiency of a four-junction stacked solar cell needs to be improved in the prior art, and provides a forward four-junction solar cell based on a nonlinear gradual change mismatch layer of overshoot callback.
The technical scheme adopted for realizing the purpose of the invention is as follows:
the positive direction four-junction solar cell based on the overshoot callback nonlinear gradual change mismatch layer comprises a germanium substrate, wherein the top of the germanium substrate is sequentially provided with a GaInP nucleation layer, a GaInAs buffer layer, a first tunneling junction, a first DBR nonlinear gradual change mismatch layer and Ga from bottom to top 1-x In x As battery, second tunneling junction, second DBR nonlinear graded mismatch layer and Ga 1-e In e As 1-m P 1-m Battery, third tunnel junction, (Al) f Ga 1-f ) 1-y In y P-cell and cap layer;
wherein the first and second DBR nonlinear graded mismatch layers have the same or different compositions and are of the general formula (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR, the component b of the initial layer to the target gradual change layer In is non-linearly gradually changed from 0.01 to x from bottom to top, and the component b of each layer In the non-linear gradual change mismatch layer overshoots and recalls according to the proportion i. Can realize the adjustment or alleviation of mismatch stress of each layer, and can reduce the overshoot range of In the material design of the layer when the overshoot layer with DBR structure is designed, and release the stress defect In the film material with smaller overcharge, thereby growing high crystal qualityAn amount of mismatch layer material.
In the technical scheme, i is 3% -35%, the effect is not obvious when i is too small, and more defects can be introduced when i is too large.
In the above-mentioned aspect, the (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b In the As DBR, 0.ltoreq.c.ltoreq.0.5, 0.5.ltoreq.d.ltoreq.1, and 0.01.ltoreq.b.ltoreq.0.6, the (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBRs use p-type dopant with a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness is 1-6 μm, the number of cycles is 10-30, and the number of (Al) is in each cycle c Ga 1-c ) 1-b In b As has a thickness in the range of 0.01-0.2 μm, (Al) d Ga 1-d ) 1-b In b As has a thickness in the range of 0.01-0.2 μm. For Ga 1-x In x As battery absorbs solar spectrum range, adopts wide spectrum and wide range DBR structure design, and can reflect and transmit Ga in wide spectrum 1-x In x Photons of the As battery are thinned, so that the thickness of an active region of the battery is reduced, the quantum efficiency and the irradiation resistance of the junction battery are improved, and meanwhile, the influence of threading dislocation caused by lattice mismatch on the active region of the battery is reduced.
In the above technical scheme, the Ga 1-x In x The As cell comprises n-Ga doped with n-type dopant 1-x In x As emitter layer and p-type doped p-Ga 1-x In x An As base region layer, wherein x is more than or equal to 0.05 and less than or equal to 0.6; wherein said n-Ga 1-x In x The doping concentration of the As emitter layer is 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p-Ga 1-x In x The doping concentration of the As base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness is in the range of 0.1-3 μm.
In the above technical scheme, the Ga 1-e In e As 1-m P 1-m The battery comprises n-Ga doped with n type 1-e In e As 1-m P 1-m Emitter layer and p-doped p-Ga 1-e In e As 1-m P 1-m A base region layer, wherein e is more than or equal to 0.1 and less than or equal to 0.6, and m is more than or equal to 0.01 and less than or equal to 0.9; wherein said n-Ga 1-e In e As 1-m P 1-m The doping concentration of the emitter layer was 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p-Ga 1-e In e As 1-m P 1-m The doping concentration of the base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 0.1-3 mu m, the irradiation resistance of the sub-battery is improved through phosphide, and meanwhile, the band gap structure of the sub-battery material is adjusted through adjusting the As/P proportion, so that the design of the sub-battery is superior to that of AlGaInAs material with the same band gap, meanwhile, the growth defect of high Al material is reduced, and the crystal quality is improved.
In the above-mentioned aspect, the (Al f Ga 1-f ) 1-y In y The P cell includes n- (Al) doped with n-type f Ga 1-f ) 1-y In y P emitter layer and P-doped P- (Al) f Ga 1-f ) 1-y In y The P base region layer, wherein f is more than or equal to 0.1 and less than or equal to 0.6, and y is more than or equal to 0.4 and less than or equal to 0.9; wherein said n- (Al) f Ga 1-f ) 1-y In y The doping concentration of the P emitting region layer is 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p- (Al) f Ga 1-f ) 1-y In y The doping concentration of the P base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness is in the range of 0.1-3 μm.
In the above technical solution, the first tunnel junction includes n doped n-type ++ GaAs layer and p-doped p ++ -Al g Ga 1-g An As layer; wherein said n ++ The doping concentration of the GaAs layer is 1 x 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -Al g Ga 1-g The doping concentration of the As layer is 1×10 19 -1×10 21 cm -3 G is more than or equal to 0.1 and less than or equal to 0.6, and the thickness range is 0.01-0.1 mu m.
At the upper partIn the technical scheme, the second tunneling junction comprises n doped with n type ++ -Ga 1-y In y P-layer and P-doped P ++ -(Al e Ga 1-e ) 1-x In x An As layer, wherein the n ++ -Ga 1-y In y The P layer, y is more than or equal to 0.4 and less than or equal to 0.9, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -(Al e Ga 1-e ) 1-x In x As layer, e is more than or equal to 0.1 and less than or equal to 0.6, x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness is in the range of 0.01-0.1 μm.
In the above technical solution, the third tunnel junction includes n doped n-type ++ -(Al f Ga 1-f ) 1-y In y P-layer and P-doped P ++ -(Al q Ga 1-q ) 1-x In x An As layer, wherein the n ++ -(Al f Ga 1-f ) 1-y In y P layer, f is more than or equal to 0.1 and less than or equal to 0.6, y is more than or equal to 0.4 and less than or equal to 0.9, and doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -(Al q Ga 1-q ) 1-x In x As layer, q is more than or equal to 0.3 and less than or equal to 0.8, x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness is in the range of 0.01-0.1 μm.
In the above technical solution, the cap layer is n-doped n + -Ga 1-x In x As, wherein x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 18 -1×10 21 cm -3 The thickness is in the range of 0.01-0.8 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the solar cell grows by combining the lattice graded buffer layer and the Bragg reflector (DBR), and simultaneously, in of the nonlinear graded layer is overshot and recalled according to a certain proportion, so that stress compensation is formed with the previous layer, the influence of screw dislocation, edge dislocation and threading dislocation In an epitaxial film is reduced, mismatch stress is adjusted or slowed down, material crystal quality is improved, the whole process growth time is shortened, the yield is improved, and the production cost is reduced.
2. The wide reflection range DBR structural design is adopted for the absorption spectrum range of the battery, so that photon reflection absorption can be enhanced, and the quantum efficiency of the sub-battery is improved.
3. The radiation resistance is achieved by thinning the cell active region design and adjusting the phosphide As/P ratio so As to adjust the band gap structure of the subcell material.
4. The invention adopts the forward four-junction solar cell with the nonlinear gradient mismatch layer, the device process is completely the same as that of the forward three-junction solar cell with the batch production process, and the manufacturing is easy.
5. The theoretical conversion efficiency of the structure can reach more than 36.8%, the photoelectric conversion efficiency of the solar cell can be 32.7% (AM 0 spectrum) at present, the actual photoelectric conversion efficiency can be improved through process optimization, and the structure can be directly applied as a complete solar cell.
Drawings
Fig. 1 is a block diagram of a preferred embodiment of the present invention.
In the figure: 1. a germanium substrate; 2. a GaInP nucleation layer; 3. a GaInAs buffer layer; 4. a first tunnel junction; 5. (Al) c Ga 1-c ) 1- b In b As/(Al d Ga 1-d ) 1-b In b As DBR (nonlinear graded mismatch layer); 6. GaInAs cells; 7. a second tunnel junction; 8. (Al) c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR (nonlinear graded mismatch layer); 9. a GaInAsP cell; 10. a third tunnel junction; 11. an AlGaInP battery; 12. and a cap layer.
Fig. 2 is a block diagram of a nonlinear graded mismatch layer area according to a preferred embodiment of the present invention, where i is a graded callback rate.
Detailed Description
The present invention will be described in further detail with reference to specific examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Fig. 1 shows a forward four-junction solar cell with a nonlinear graded mismatch layer according to an embodiment of the present invention, including a 1 germanium substrate and a bottom cell region, 2 GaInP nucleation layer 3, gaInAs buffer layer 4, first tunnel junction 5, (Al) from bottom to top c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR (nonlinear graded mismatch layer) 6, gaInAs cell 7, second tunnel junction 8, (Al) c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b An As DBR (nonlinear graded mismatch layer) 9, a GaInAsP cell 10, a third tunnel junction 11, an AlGaInP cell 12, a cap layer.
Fig. 2 is a block diagram of a nonlinear graded mismatch layer area according to a preferred embodiment of the present invention, where i is a graded callback rate. The manufacturing process is as follows:
the positive four-junction solar cell adopting Metal Organic Chemical Vapor Deposition (MOCVD) technology to grow a nonlinear graded mismatch layer on a germanium substrate comprises the following specific manufacturing processes:
the pressure of the reaction chamber is 50mbar, and the pH is pre-communicated at the high temperature of 700-800 DEG C 3 Forming an n-Ge bottom cell on the p-Ge substrate by a diffusion process, wherein the thickness of the n-Ge bottom cell is 0.1 mu m;
Ga 0.5 In 0.5 the P nucleation layer has n-type dopant of Si, se or Te and growth temperature of 500-700 deg.c and thickness of 0.01-0.5 micron;
Ga 0.99 In 0.01 the As buffer layer has n-type dopant of Si, se or Te and growth temperature of 600-800 deg.c and thickness of 0.02-0.8 micron;
a first tunnel junction comprising n-doped n ++ GaAs layer and p-doped p ++ -Al g Ga 1-g An As layer, wherein n ++ The doping agent of the GaAs layer is Si, se or Te with doping concentration of 1×10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm, and the growth temperature is 500-700 ℃; wherein p is ++ -Al g Ga 1-g The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 G is more than or equal to 0.1 and less than or equal to 0.6, and the thickness range is more than or equal to 00.01-0.1 μm, and the growth temperature is 500-700 ℃;
said (Al) c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR (nonlinear graded mismatch layer), wherein C is more than or equal to 0.5, d is more than or equal to 0.5 and less than or equal to 1, b is more than or equal to 0.01 and less than or equal to 0.5, the component b of the original layer to the target graded layer In is graded from bottom to top to x, the component b of the In is graded from bottom to top to 0.01 and is graded from bottom to top to x, each layer In of the nonlinear graded layer is designed to overshoot a callback part value i according to a certain proportion, the callback proportion is 3-25%, the doping agent is Zn, mg or C, and the doping concentration is 1 multiplied by 10 17 -1×10 19 cm -3 The thickness is 1-6 μm, the number of cycles is 5-30, and the number of (Al) is in each cycle c Ga 1-c ) 1- b In b As has a thickness in the range of 0.01-0.2 μm, (Al) d Ga 1-d ) 1-b In b As thickness range is 0.01-0.2 μm, growth temperature is 600-800 ℃;
Ga 1-x In x as cell comprising n-Ga doped n-type 1-x In x As emitter layer and p-type doped p-Ga 1-x In x An As base region layer, wherein x is more than or equal to 0.05 and less than or equal to 0.6; wherein said n-Ga 1-x In x The doping agent of the As emitting region layer is Si, se or Te, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 mu m, and the growth temperature is 600-800 ℃; the p-Ga 1-x In x The doping agent of the As base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 0.1-3 mu m, and the growth temperature is 600-800 ℃;
a second tunnel junction comprising n-doped n ++ -Ga 1-y In y P-layer and P-doped P ++ -(Al e Ga 1-e ) 1-x In x An As layer, wherein the n ++ -Ga 1-y In y The P layer has a doping agent of Si, se or Te with a doping concentration of 1×10 19 -1×10 21 cm -3 Y is more than or equal to 0.4 and less than or equal to 0.9, the thickness range is 0.01-0.1 mu m, and the growth temperature is 500-700 DEG CThe method comprises the steps of carrying out a first treatment on the surface of the The p is ++ -(Al e Ga 1-e ) 1-x In x The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 E is more than or equal to 0.1 and less than or equal to 0.6, x is more than or equal to 0.01 and less than or equal to 0.6, the thickness range is 0.01-0.1 mu m, and the growth temperature is 500-700 ℃;
(Al c Ga 1-c ) 1-x In x As/(Al d Ga 1-d ) 1-x In x as DBR, wherein 0.ltoreq.c.ltoreq.0.5, 0.5.ltoreq.d.ltoreq.1 and 0.01.ltoreq.x.ltoreq.0.6, the composition b of the initial layer to the target graded layer In is graded from 0.01 to x from bottom to top, the composition b of the In is graded from 0.01 to top to x In a nonlinear manner, each layer In of the nonlinear graded layer is designed to overshoot a callback part value i according to a certain proportion, the callback proportion is 3% -25%, the doping agent is Zn, mg or C, and the doping concentration is 1×10 17 -1×10 19 cm -3 The thickness is 1-3 μm, the number of cycles is 5-30, and the number of (Al) is in each cycle c Ga 1-c ) 1-x In x As has a thickness in the range of 0.01-0.2 μm, (Al) d Ga 1-d ) 1-x In x As thickness range is 0.01-0.2 μm, growth temperature is 600-800 ℃;
Ga 1-e In e As 1-m P 1-m battery comprising n-Ga doped with n-type 1-e In e As 1-m P 1-m Emitter layer and p-doped p-Ga 1-e In e As 1-m P 1-m A base region layer, wherein e is more than or equal to 0.1 and less than or equal to 0.6, and m is more than or equal to 0.01 and less than or equal to 0.9; wherein said n-Ga 1-e In e As 1-m P 1-m The dopant of the emitter layer is Si, se or Te with a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 mu m, and the growth temperature is 600-800 ℃; the p-Ga 1-e In e As 1-m P 1-m The doping agent of the base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 0.1-3 mu m, and the growth temperature is 600-750 ℃;
a third tunneling junction including n-doped n ++ -(Al f Ga 1-f ) 1-y In y P-layer and P-doped P ++ -(Al q Ga 1-q ) 1- x In x An As layer, wherein the n ++ -(Al f Ga 1-f ) 1-y In y The P layer has a doping agent of Si, se or Te with a doping concentration of 1×10 19 -1×10 21 cm -3 F is more than or equal to 0.1 and less than or equal to 0.6, y is more than or equal to 0.4 and less than or equal to 0.9, the thickness range is 0.01-0.1 mu m, and the growth temperature is 500-700 ℃; the p is ++ -(Al q Ga 1-q ) 1-x In x The As layer has a doping agent of Zn, mg or C with a doping concentration of 1×10 19 -1×10 21 cm -3 Q is more than or equal to 0.3 and less than or equal to 0.8, x is more than or equal to 0.01 and less than or equal to 0.6, the thickness range is 0.01-0.1 mu m, and the growth temperature is 500-700 ℃;
(Al f Ga 1-f ) 1-y In y p-cell comprising n- (Al) doped n-type f Ga 1-f ) 1-y In y P emitter layer and P-doped P- (Al) f Ga 1-f ) 1-y In y The P base region layer, wherein f is more than or equal to 0.1 and less than or equal to 0.6, and y is more than or equal to 0.4 and less than or equal to 0.9; wherein said n- (Al) f Ga 1-f ) 1-y In y The P emitting region layer has a doping agent of Si, se or Te with a doping concentration of 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 mu m, and the growth temperature is 600-800 ℃; the p- (Al) f Ga 1-f ) 1-y In y The doping agent of the P base region layer is Zn, mg or C, and the doping concentration is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness range is 0.1-3 mu m, and the growth temperature is 600-800 ℃;
the cap layer is n-doped n + -Ga 1-x In x As, wherein x is more than or equal to 0.02 and less than or equal to 0.5, the doping agent is Si, se or Te, and the doping concentration is 1 multiplied by 10 18 -1×10 20 cm -3 The thickness range is 0.01-0.8 μm, and the growth temperature is 550-800 ℃.
The total time required for the growth of each layer of material is 3.5-7 hours, and then the device process and the forward three-junction solar cell are completely the same, which is a known technology.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (10)

1. The positive direction four-junction solar cell based on the overshoot callback nonlinear gradual change mismatch layer is characterized by comprising a germanium substrate, wherein the top of the germanium substrate is sequentially provided with a GaInP nucleation layer, a GaInAs buffer layer, a first tunneling junction, a first DBR nonlinear gradual change mismatch layer and Ga from bottom to top 1-x In x As battery, second tunneling junction, second DBR nonlinear graded mismatch layer and Ga 1- e In e As 1-m P 1-m Battery, third tunnel junction, (Al) f Ga 1-f ) 1-y In y P-cell and cap layer;
wherein the first and second DBR nonlinear graded mismatch layers have the same or different compositions and are of the general formula (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR, the component b of the initial layer to the target gradual change layer In is non-linearly gradually changed from 0.01 to x from bottom to top, and the component b of each layer In the non-linear gradual change mismatch layer overshoots and recalls according to the proportion i.
2. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, comprising a germanium substrate, i being 3% -35%.
3. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein said (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b In the As DBR, 0.ltoreq.c.ltoreq.0.5, 0.5.ltoreq.d.ltoreq.1, and 0.01.ltoreq.b.ltoreq.0.6, the (Al c Ga 1-c ) 1-b In b As/(Al d Ga 1-d ) 1-b In b As DBR uses p-type dopant with doping concentration of 1×10 17 -1×10 19 cm -3 The thickness is 1-6 μm, the number of cycles is 10-30, and the number of (Al) is in each cycle c Ga 1-c ) 1- b In b As has a thickness in the range of 0.01-0.2 μm, (Al) d Ga 1-d ) 1-b In b As has a thickness in the range of 0.01-0.2 μm.
4. The positive-going four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein said Ga 1-x In x The As cell comprises n-Ga doped with n-type dopant 1-x In x As emitter layer and p-type doped p-Ga 1-x In x An As base region layer, wherein x is more than or equal to 0.05 and less than or equal to 0.6; wherein said n-Ga 1-x In x The doping concentration of the As emitter layer is 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p-Ga 1-x In x The doping concentration of the As base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness is in the range of 0.1-3 μm.
5. The positive-going four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein said Ga 1-e In e As 1-m P 1-m The battery comprises n-Ga doped with n type 1-e In e As 1-m P 1-m Emitter layer and p-doped p-Ga 1-e In e As 1-m P 1-m A base region layer, wherein e is more than or equal to 0.1 and less than or equal to 0.6, and m is more than or equal to 0.01 and less than or equal to 0.9; wherein said n-Ga 1-e In e As 1-m P 1-m The doping concentration of the emitter layer was 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p-Ga 1-e In e As 1- m P 1-m The doping concentration of the base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness is in the range of 0.1-3 μm.
6. Such as weightThe positive-going four-junction solar cell of overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein said (Al f Ga 1-f ) 1-y In y The P cell includes n- (Al) doped with n-type f Ga 1-f ) 1-y In y P emitter layer and P-doped P- (Al) f Ga 1-f ) 1-y In y The P base region layer, wherein f is more than or equal to 0.1 and less than or equal to 0.6, and y is more than or equal to 0.4 and less than or equal to 0.9; wherein said n- (Al) f Ga 1-f ) 1- y In y The doping concentration of the P emitting region layer is 1×10 17 -1×10 19 cm -3 The thickness range is 0.01-0.2 μm; the p- (Al) f Ga 1-f ) 1-y In y The doping concentration of the P base region layer is 1 multiplied by 10 16 -1×10 18 cm -3 The thickness is in the range of 0.1-3 μm.
7. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein the first tunnel junction comprises n-doped n-type ++ GaAs layer and p-doped p ++ -Al g Ga 1-g An As layer; wherein said n ++ The doping concentration of the GaAs layer is 1 x 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -Al g Ga 1-g The doping concentration of the As layer is 1×10 19 -1×10 21 cm -3 G is more than or equal to 0.1 and less than or equal to 0.6, and the thickness range is 0.01-0.1 mu m.
8. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein the second tunnel junction comprises n-doped n-type ++ -Ga 1-y In y P-layer and P-doped P ++ -(Al e Ga 1-e ) 1-x In x An As layer, wherein the n ++ -Ga 1-y In y The P layer, y is more than or equal to 0.4 and less than or equal to 0.9, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -(Al e Ga 1-e ) 1-x In x As layer, e is more than or equal to 0.1 and less than or equal to 0.6, x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness is in the range of 0.01-0.1 μm.
9. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein the third tunneling junction comprises n-doped n-type ++ -(Al f Ga 1-f ) 1-y In y P-layer and P-doped P ++ -(Al q Ga 1-q ) 1-x In x An As layer, wherein the n ++ -(Al f Ga 1-f ) 1-y In y P layer, f is more than or equal to 0.1 and less than or equal to 0.6, y is more than or equal to 0.4 and less than or equal to 0.9, and doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness range is 0.01-0.1 μm; the p is ++ -(Al q Ga 1-q ) 1-x In x As layer, q is more than or equal to 0.3 and less than or equal to 0.8, x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 19 -1×10 21 cm -3 The thickness is in the range of 0.01-0.1 μm.
10. The forward four-junction solar cell of the overshoot-callback-based nonlinear graded mismatch layer of claim 1, wherein said cap layer is n-doped n + -Ga 1-x In x As, wherein x is more than or equal to 0.01 and less than or equal to 0.6, and the doping concentration is 1 multiplied by 10 18 -1×10 21 cm -3 The thickness is in the range of 0.01-0.8 μm.
CN202310330266.1A 2023-03-30 2023-03-30 Forward four-junction solar cell of nonlinear gradual change mismatch layer based on overshoot callback Pending CN116344652A (en)

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