CN116344436A - Method for preparing double-layer SOI material - Google Patents
Method for preparing double-layer SOI material Download PDFInfo
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- CN116344436A CN116344436A CN202310331894.1A CN202310331894A CN116344436A CN 116344436 A CN116344436 A CN 116344436A CN 202310331894 A CN202310331894 A CN 202310331894A CN 116344436 A CN116344436 A CN 116344436A
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- 239000000463 material Substances 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 113
- 239000010410 layer Substances 0.000 claims abstract description 50
- 150000002500 ions Chemical class 0.000 claims abstract description 38
- 239000002356 single layer Substances 0.000 claims abstract description 29
- 230000005587 bubbling Effects 0.000 claims abstract description 24
- 238000005187 foaming Methods 0.000 claims abstract description 14
- 239000000126 substance Substances 0.000 claims description 10
- -1 hydrogen ions Chemical class 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000007517 polishing process Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 238000009832 plasma treatment Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000012212 insulator Substances 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 230000009471 action Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The present application provides a method of preparing a bilayer SOI material, the method comprising the steps of: providing a first substrate; implanting bubbling ions on a surface of the first substrate; providing a second substrate, and bonding the surface of the first substrate, into which foaming ions are implanted, with the second substrate; stripping a portion of the first substrate away from the second substrate to obtain a single layer of SOI material; providing a third substrate; implanting bubbling ions on the surface of the third substrate; bonding the surface of the third substrate, into which foaming ions are implanted, with the single-layer SOI material; and stripping a part of the third substrate away from the single-layer SOI material to obtain the double-layer SOI material. The double-layer SOI material with good uniformity can be obtained by the method.
Description
Technical Field
The present application relates to the field of semiconductor manufacturing, and in particular, to a method for preparing a double-layer SOI material.
Background
Silicon-on-insulator (Silicon On Insulator, SOI) is a new generation of silicon-based materials that are widely used, and has important applications in low voltage, low power consumption circuits, micro-mechanical sensors, optoelectronic integration, and the like.
The current fabrication techniques of SOI wafers mainly include the separation by implanted oxygen (Separate by IMplant Oxygen, SIMOX) technique, the Bond Etch SOI (BESOI) technique, and the back side Etch SOI (BESOI) technique. The SIMOX technology is to implant oxygen ions into a silicon wafer, control the implantation dosage and energy, and change the thickness of a silicon dioxide insulating buried layer and a top silicon layer. The BESOI technology is to oxidize at least one of two silicon wafers, then attach the two silicon wafers together to realize bonding, and then grind, etch and chemically and mechanically polish the back surface to reduce the thickness. The buried oxide layer and the top silicon with better quality can be obtained by the BESOI technology, the thickness of the buried oxide layer can be adjusted, and the preparation cost is low.
Based on current market development, single-layer SOI materials have not been satisfied, and a need has also been raised for double-layer SOI materials. Therefore, a preparation method of the double-layer SOI material needs to be found, so that the market demand can be met, and the total yield of the double-layer SOI material can be ensured.
Disclosure of Invention
The technical problem to be solved by the application is to provide a method for preparing a double-layer SOI material, which can obtain the double-layer SOI material with good uniformity.
In order to solve the above problems, the following provides a method for preparing a double-layer SOI material, comprising the steps of: providing a first substrate; implanting bubbling ions on a surface of the first substrate; providing a second substrate, and bonding the surface of the first substrate, into which foaming ions are implanted, with the second substrate; stripping a portion of the first substrate away from the second substrate to obtain a single layer of SOI material; providing a third substrate; implanting bubbling ions on the surface of the third substrate; bonding the surface of the third substrate, into which foaming ions are implanted, with the single-layer SOI material; and stripping a part of the third substrate away from the single-layer SOI material to obtain the double-layer SOI material.
In some embodiments, the first, second, and third substrates are monocrystalline silicon substrates.
In some embodiments, before implanting the bubbling ions into the first substrate, the method further comprises the step of forming an oxide layer on a surface of the first substrate.
In some embodiments, the method of forming the oxide layer on the surface of the first substrate is any one of a thermal oxidation method and a chemical vapor deposition method.
In some embodiments, before implanting the bubbling ions into the third substrate, the method further comprises the step of forming an oxide layer on a surface of the third substrate.
In some embodiments, the method of forming the oxide layer on the surface of the third substrate is any one of a thermal oxidation method and a chemical vapor deposition method.
In some embodiments, the bubbling ion is selected from one of hydrogen and helium, or a combination thereof.
In some embodiments, the surface of the second substrate bonded to the first substrate is either a smooth surface or an oxidized layer.
In some embodiments, the single layer SOI material and the double layer SOI material are polished by a chemical mechanical polishing process.
In some embodiments, the third substrate is bonded to the single layer of SOI material by plasma treatment and vacuum bonding.
According to the technical scheme, on the basis of the single-layer SOI material obtained by surface bonding of the injection foaming ions, the foaming ions are injected into the third substrate and bonded with the single-layer SOI material, so that the double-layer SOI material with good uniformity can be obtained.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
FIG. 1 is a flow chart illustrating one embodiment of a method for fabricating a bilayer SOI material as described herein;
fig. 2 to 9 are schematic views of device structures formed by main steps of a specific embodiment of a method for preparing a double-layer SOI material according to the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
One embodiment of the present application provides a method of preparing a bilayer SOI material.
Referring to fig. 1, a flowchart of one embodiment of a method for fabricating a dual layer SOI material is shown. As shown in fig. 1, a method for preparing a double-layer SOI material according to an embodiment of the present application includes: step S110, providing a first substrate; step S111, implanting foaming ions on the surface of the first substrate; step S112, providing a second substrate, and bonding the surface of the first substrate, into which the foaming ions are implanted, with the second substrate; step S113, stripping part of the first substrate far away from the second substrate to obtain a single-layer SOI material; step S114, providing a third substrate; step S115, implanting foaming ions on the surface of the third substrate; step S116, bonding the surface of the third substrate, into which foaming ions are implanted, with the single-layer SOI material; step S117, peeling off a portion of the third substrate away from the single-layer SOI material to obtain a double-layer SOI material.
Fig. 2 to fig. 9 are schematic views of device structures formed by main steps of a specific embodiment of a method for preparing a double-layer SOI material as described in the present application.
Referring to step S110, as shown in fig. 2, a first substrate 21 is provided. In this embodiment, the material of the first substrate 21 is monocrystalline silicon material, which is compatible with large-scale integrated circuits. In other embodiments, the material of the first substrate 21 may be one of polysilicon, or amorphous silicon, or may be single crystal germanium, germanium on insulator, or a silicon germanium compound, or may have a silicon on insulator structure or an epitaxial structure on silicon.
Referring to step S111, as shown in fig. 3, bubbling ions are implanted into the surface of the first substrate 21. In this embodiment, before the first substrate 21 is implanted with the bubbling ions, the method further includes a step of forming an oxide layer 211 on the surface of the first substrate 21. In this embodiment, an oxide layer 211 is formed on the surface of the first substrate 21 by a thermal oxidation method. In other embodiments, the oxide layer 211 may also be formed using chemical vapor deposition. In this embodiment, the bubbling ions implanted into the surface of the first substrate 21 are hydrogen ions. In other embodiments, the bubbling ion is selected from one or a combination of hydrogen and helium ions.
Referring to fig. 4, referring to step S112, a second substrate 22 is provided, and the surface of the first substrate 21 implanted with the bubbling ions is bonded to the second substrate 22. In this embodiment, the material of the second substrate 22 is monocrystalline silicon material, which is compatible with large scale integrated circuits. In other embodiments, the material of the second substrate 22 may be one of polysilicon, or amorphous silicon, or may be single crystal germanium, germanium on insulator, or a silicon germanium compound, or may have a silicon on insulator structure or an epitaxial structure on silicon. In this embodiment, the surface to be bonded of the second substrate 22 is a smooth surface. In other embodiments, the surface of the second substrate 22 may also have an oxide layer. In this embodiment, before the first substrate 21 and the second substrate 22 are bonded, the method further includes a step of cleaning and activating the first substrate 21 and the second substrate 22. In this embodiment, the surface of the first substrate 21 into which the bubbling ions are injected and the second substrate 22 are bonded together at room temperature.
Referring to step S113, as shown in fig. 5, a portion of the first substrate 21 remote from the second substrate 22 is peeled off to obtain a single layer of SOI material 24. In this embodiment, the bonded first substrate 21 and second substrate 22 are heat treated to form microcavities where the bubbling ions are implanted, thereby allowing the portion of the first substrate 21 remote from the second substrate 22 to be stripped to form a single layer of SOI material 24. Then, high-temperature annealing is performed to increase the bonding strength and recover the damage caused by the implantation of hydrogen ions on the surface of the first substrate 21.
In this embodiment, polishing the single layer of SOI material 24 by a chemical mechanical polishing process is also included. The chemical mechanical polishing process is to apply the single layer of SOI material 24 to a polishing pad for relative movement, and combine with the chemical etching action of the polishing liquid to form a soft layer and remove the soft layer, resulting in a single layer of SOI material 24 that is highly planarized, has low surface roughness, and has low defects.
Referring to step S114, a third substrate 23 is provided as shown in fig. 6. In this embodiment, the material of the third substrate 23 is monocrystalline silicon material, which is compatible with large-scale integrated circuits. In other embodiments, the material of the third substrate 23 may be one of polysilicon, or amorphous silicon, or may be single crystal germanium, germanium on insulator, or a silicon germanium compound, or may have a silicon on insulator structure or an epitaxial structure on silicon.
Referring to step S115, as shown in fig. 7, bubbling ions are implanted into the surface of the third substrate 23. In this embodiment, before the third substrate 23 is implanted with the bubbling ions, the method further includes a step of forming an oxide layer 231 on the surface of the first substrate 23. In this embodiment, an oxide layer 231 is formed on the surface of the third substrate 23 by a thermal oxidation method. In other embodiments, the oxide layer 231 may also be formed using chemical vapor deposition. In this embodiment, the bubbling ions implanted on the surface of the third substrate 23 are hydrogen ions. In other embodiments, the bubbling ion is selected from one or a combination of hydrogen and helium ions.
Referring to fig. 8, referring to step S116, the surface of the third substrate 23, into which the foaming ions are implanted, is bonded to the single-layer SOI material 24. In this embodiment, the surface to be bonded of the third substrate 23 is a smooth surface. In other embodiments, the surface of the third substrate 23 is either a smooth surface or an oxide layer. In this embodiment, the third substrate 23 and the single-layer SOI material 24 are bonded by plasma treatment and vacuum bonding. The plasma treatment is to change the activity of the surface of the substance by ionized gas, remove the polluted impurities on the surface of the substance and improve the adhesive force of the surface of the substance. The energy of particles in the plasma is generally about several to tens of electron volts, which is larger than the bonding bond energy of the polymer material, and can completely break the chemical bond of the organic macromolecule to form a new bond, but is far lower than the high-energy radioactive rays, only the surface of the material is involved, and the performance of the matrix is not affected. In the existing bonding technology, the surface to be bonded is directly bonded by adopting a conventional bonding method at room temperature, so that the bonding force of the edge of the bonding surface is smaller, the bonding strength of the edge of the bonding surface is reduced, and bubbles are easy to form. In this embodiment, the surface of the third substrate 23 implanted with the foaming ions and the surface of the single-layer SOI material 24 are bonded by vacuum bonding.
Referring to fig. 9, referring to step S117, a portion of the third substrate 23 remote from the single layer of SOI material 24 is stripped to yield a double layer of SOI material 25. In this embodiment, the bonded third substrate 23 and single layer SOI material 24 are heat treated to form microcavities where the bubbling ions are implanted, thereby allowing the silicon wafer to delaminate to form a double layer SOI material 25. And then high-temperature annealing is performed to increase the bonding strength and recover damage caused by the implantation of hydrogen ions on the surface of the third substrate 23.
In this embodiment, polishing the double layer SOI material 25 by a chemical mechanical polishing process is also included. The chemical mechanical polishing process is to apply the double-layer SOI material 25 to a polishing pad to perform a relative motion, and combine the chemical etching action of the polishing solution to form a soft layer and remove the soft layer, thereby obtaining the double-layer SOI material 25 with high planarization, low surface roughness and low defects.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, the statement "comprises" and "comprising" does not exclude the presence of other elements than those listed in any process, method, article, or apparatus that comprises the element.
The embodiments in this application are described in a related manner, and identical and similar parts of the embodiments are all referred to each other, and each embodiment is mainly different from other embodiments.
The foregoing is merely a preferred embodiment of the present application and is not intended to limit the scope of the present application. It should be noted that, for a person skilled in the art, several improvements and modifications can be made without departing from the principle of the present application, and these improvements and modifications should also be considered as the protection scope of the present application.
Claims (10)
1. A method of making a bilayer SOI material comprising the steps of:
providing a first substrate;
implanting bubbling ions on a surface of the first substrate;
providing a second substrate, and bonding the surface of the first substrate, into which foaming ions are implanted, with the second substrate;
stripping a portion of the first substrate away from the second substrate to obtain a single layer of SOI material;
providing a third substrate;
implanting bubbling ions on the surface of the third substrate;
bonding the surface of the third substrate, into which foaming ions are implanted, with the single-layer SOI material;
and stripping a part of the third substrate away from the single-layer SOI material to obtain the double-layer SOI material.
2. The method of claim 1, wherein the first substrate, the second substrate, and the third substrate are monocrystalline silicon substrates.
3. The method of claim 1, further comprising the step of forming an oxide layer on a surface of the first substrate prior to implanting the bubbling ions into the first substrate.
4. The method according to claim 3, wherein the method of forming an oxide layer on the surface of the first substrate is any one of a thermal oxidation method and a chemical vapor deposition method.
5. The method of claim 1, further comprising the step of forming an oxide layer on a surface of the third substrate prior to implanting the bubbling ions into the third substrate.
6. The method according to claim 5, wherein the method of forming an oxide layer on the surface of the third substrate is any one of a thermal oxidation method and a chemical vapor deposition method.
7. The method of claim 1, wherein the bubbling ions are selected from one or a combination of hydrogen ions and helium ions.
8. The method of claim 1, wherein the surface of the second substrate bonded to the first substrate is either a smooth surface or an oxidized layer.
9. The method of claim 1, wherein the single layer SOI material and the double layer SOI material are polished by a chemical mechanical polishing process.
10. The method of claim 1, wherein the third substrate is bonded to the single layer SOI material by plasma treatment and vacuum bonding.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310331894.1A CN116344436A (en) | 2023-03-30 | 2023-03-30 | Method for preparing double-layer SOI material |
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| CN202310331894.1A CN116344436A (en) | 2023-03-30 | 2023-03-30 | Method for preparing double-layer SOI material |
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| CN116344436A true CN116344436A (en) | 2023-06-27 |
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